# Power MOSFET, N Channel, 20 V, 6.9 A, 0.02 ohm, SC-59, Surface Mount

![Product image](https://novapart.co/image/farnell:2543536RL/)

**URL**: https://novapart.co/products/DMN2020LSN-7/power-mosfet-n-channel-20-v-69-a-002-ohm-sc-59
**SKU**: DMN2020LSN-7
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.1820
**Stock**: 10+
**Lead Time**: 106 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:6.9A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.013ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1V; Power Di

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 610mW |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 4.5V |
| Transistor Case Style | SC-59 |
| Drain Source Voltage Vds | 20V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 6.9A |
| Drain Source On State Resistance | 0.02ohm |
| Gate Source Threshold Voltage Max | 1V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2543536RL/)

**DMN2020LSN** 

**N-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Features** 

- Low On-Resistance 

- Low Input Capacitance 

- Fast Switching Speed 

- Low Input/Output Leakage 

- ESD Protected Up To 2KV 

- **Lead Free By Design/RoHS Compliant (Note 1)** 

- **"Green" Device (Note 2)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

## **Mechanical Data** 

- Case: SC-59 

- Case Material - Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating  94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminals: Finish Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 

- Terminal Connections: See Diagram 

- Marking Information: See Page 2 

- Ordering Information: See Page 2 

- Weight: 0.014 grams (approximate) 

SC-59 

**==> picture [432 x 102] intentionally omitted <==**

**----- Start of picture text -----**<br>
Drain<br>D<br>Gate<br>G S<br>   Gate<br>a @ AG    Diode  Protection Source G TOP VIEW<br>ESD PROTECTED TO 2kV TOP VIEW EQUIVALENT CIRCUIT Pin Out Configuration<br>**----- End of picture text -----**<br>


## **Maximum Ratings** @TA = 25°C unless otherwise specified 

|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|
|---|---|---|---|---|---|
|||||||
|**Characteristic**|||**Symbol **|**Value**|**Units**|
|Drain-Source Voltage|||VDSS|20|V|
|Gate-Source Voltage<br>Continuous|||VGSS|±12|V|
|Continuous Drain Current|Steady<br>State|TA= 25°C<br>TA= 85°C|ID|6.9<br>4.5|A|
|Pulsed Drain Current(Note 4)|||IDM|30|A|



## **Thermal Characteristics** 

|**Thermal Characteristics**||||
|---|---|---|---|
|**Characteristic**|**Symbol **|**Value**|**Units**|
|Power Dissipation(Note 3)|PD|0.61|W|
|Thermal Resistance,Junction to Ambient@TA= 25°C(Note 3)|RθJA|204|°C /W|
|Operating and Storage Temperature Range|TJ, TSTG|-55 to +150|°C|



- Notes: 1. No purposefully added lead. 

   2. Diodes Inc.'s "Green" Policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 

   3. Device mounted on FR-4 PCB, with minimum recommended pad layout. 

   4. Repetitive rating, pulse width limited by junction temperature. 

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DMN2020LSN Document number: DS31946 Rev. 3 - 2 

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**DMN2020LSN** 

## **Electrical Characteristics** @TA = 25°C unless otherwise specified 

|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**|**Symbol**|**Min**|**Typ **|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS(Note 5) **|||||||
|Drain-Source Breakdown Voltage|BVDSS|20|-|-|V|VGS= 0V,ID= 250μA|
|Zero Gate Voltage Drain Current TJ= 25°C|IDSS|-|-|1.0|μA|VDS= 20V,VGS= 0V|
|Gate-Source Leakage|IGSS|-|-|±10|μA|VGS= ±12V,VDS= 0V|
|**ON CHARACTERISTICS(Note 5) **|||||||
|Gate Threshold Voltage|VGS(th)|0.5|1.0|1.5|V|VDS= VGS,ID= 250μA|
|Static Drain-Source On-Resistance|RDS (ON)|-|13<br>18|20<br>28|mΩ|VGS= 4.5V,ID= 9.4A|
|||||||VGS= 2.5V,ID= 8.3A|
|Forward Transfer Admittance||Yfs||-|16|-|S|VDS= 5V,ID= 9.4A|
|Diode Forward Voltage|VSD|-|0.7|1.2|V|VGS= 0V,IS= 1.3A|
|**DYNAMIC CHARACTERISTICS(Note 6)**<br>~~—_—~~<br>~~eee~~|||||||
|Input Capacitance<br>~~—_—~~|Ciss|-|1149|-<br>~~eee~~|pF<br>~~eee~~|VDS= 10V, VGS= 0V,<br>f = 1.0MHz<br>~~eee~~|
|Output Capacitance<br>~~—_—~~|Coss|-|157|-<br>~~eee~~|pF<br>~~eee~~||
|Reverse Transfer Capacitance<br>~~—_—~~|Crss|-|142|-<br>~~eee~~|pF<br>~~eee~~||
|Gate Resistance<br>~~—_—~~|Rg|-|1.51|-<br>~~eee~~|Ω<br>~~eee~~|VDS= 0V,VGS= 0V,f = 1MHz<br>~~eee~~|
|Total Gate Charge<br>~~—_—~~<br>~~==~~|Qg<br>~~==~~|-<br>~~==~~|11.6<br>~~==~~|-<br>~~eee~~<br>~~==~~|nC<br>~~eee~~<br>~~==~~|VGS= 4.5V, VDS= 10V,<br>ID= 9.4A<br>~~eee~~<br>~~==~~|
|Gate-Source Charge<br>~~—_—~~<br>~~==~~|Qgs<br>~~==~~|-<br>~~==~~|2.7<br>~~==~~|-<br>~~eee~~<br>~~==~~|nC<br>~~eee~~<br>~~==~~||
|Gate-Drain Charge<br>~~==~~|Qgd<br>~~==~~|-<br>~~==~~|3.4<br>~~==~~|-<br>~~==~~|nC<br>~~==~~||
|Turn-On DelayTime<br>~~==~~|tD(on) <br>~~==~~|-<br>~~==~~|11.67<br>~~==~~|-<br>~~==~~|ns<br>~~==~~|VDD= 10V, VGS= 4.5V,<br>RGEN= 6Ω, ID= 1A<br>~~==~~|
|Turn-On Rise Time<br>~~==~~|tr<br>~~==~~|-<br>~~==~~|12.49<br>~~==~~|-<br>~~==~~|ns<br>~~==~~||
|Turn-Off DelayTime<br>~~==~~|tD(off) <br>~~==~~|-<br>~~==~~|35.89<br>~~==~~|-<br>~~==~~|ns<br>~~==~~||
|Turn-Off Fall Time<br>~~==~~|tf<br>~~==~~|-<br>~~==~~|12.33<br>~~==~~|-<br>~~==~~|ns<br>~~==~~||



**==> picture [203 x 212] intentionally omitted <==**

**----- Start of picture text -----**<br>
20<br>VGS = 8.0V<br>VGS = 4.5V<br>15 V GS = 3.0V<br>VGS = 2.5V<br>VGS = 2.0V<br>10<br>5<br>VGS = 1.8V<br>VGS = 1.5V<br>0<br>0 0.5 1 1.5 2<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 1 Typical Output Characteristics<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


**==> picture [204 x 214] intentionally omitted <==**

**----- Start of picture text -----**<br>
20<br>15 VDS = 10V<br>10<br>TA = 150°C<br>5 T A  = 125°C<br>TA = 85°C<br>TA = 25°C<br>TA = -55°C<br>0<br>0 0.5 1 1.5 2 2.5 3<br>VGS, GATE SOURCE VOLTAGE (V)<br>Fig. 2 Typical Transfer Characteristics<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


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DMN2020LSN Document number: DS31946 Rev. 3 - 2 

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**DMN2020LSN** 

**==> picture [479 x 663] intentionally omitted <==**

**----- Start of picture text -----**<br>
0.06 0.04<br>0.05<br>0.03 V GS = 4.5V<br>0.04 V GS = 1.8V<br>0.03 0.02 TA = 150°C<br>TA = 125°C<br>TA = 85°C<br>0.02<br>VGS = 2.5V TA = 25°C<br>0.01<br>VGS = 4.5V TA = -55°C<br>0.01<br>0 0<br>0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10 12 14 16 18 20<br>ID, DRAIN-SOURCE CURRENT (A) ID, DRAIN CURRENT (A)<br>Fig. 3 Typical On-Resistance  Fig. 4  Typical Drain-Source On-Resistance<br>vs. Drain Current and Gate Voltage vs. Drain Current and Temperature<br>1.6 0.04<br>1.4<br>0.03<br>1.2<br>1.0 I V D GS  = 500mA  = 4.5V 0.02 VGSID = 5A = 2.5V<br>VGS = 2.5V<br>0.8 I D  = 150mA VGS = 4.5V<br>0.01 ID = 10A<br>sects ———<br>0.6<br>0.4 0<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)<br>Fig. 5 On-Resistance Variation with Temperature Fig. 6 On-Resistance Variation with Temperature<br>1.8 20<br>1.6<br>1.4<br>15 T A  = 25°C<br>1.2<br>ID = 1mA<br>1.0<br>10<br>0.8 ID = 250µA<br>0.6<br>5<br>0.4<br>0.2<br>—~ |<br>0 0<br>-50 -25 0 25 50 75 100 125 150 0.4 0.6 0.8 1 1.2<br>TA, AMBIENT TEMPERATURE (°C) VSD, SOURCE-DRAIN VOLTAGE (V)<br>Fig. 7 Gate Threshold Variation vs. Ambient Temperature Fig. 8 Diode Forward Voltage vs. Current<br>)Ω )Ω<br>, DRAIN-SOURCE ON-RESISTANCE ( , DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON) DS(ON)<br>R R<br>)Ω<br>, DRAIN-SOURCE<br>DS(ON)<br>R<br>ON-RESISTANCE (NORMALIZED) , DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>, SOURCE CURRENT (A)<br>IS<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(TH)<br>V<br>**----- End of picture text -----**<br>


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**DMN2020LSN** 

**==> picture [481 x 446] intentionally omitted <==**

**----- Start of picture text -----**<br>
1,800 10,000<br>1,600 f = 1MHz<br>1,400 TA = 150°C<br>1,000<br>1,200 saneecca=<br>1,000 a Ciss See T A  = 125°C<br>100<br>800<br>600<br>10 T A = 85°C<br>400 TA = 25°C<br>Coss<br>200 T A  = -55°C<br>——— Crss ==-saeaee<br>0 1<br>0 5 10 15 20 0 2 4 6 8 10 12 14 16 18 20<br>VDS, DRAIN-SOURCE VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 9 Typical Capacitance Fig. 10 Typical Drain-Source Leakage Current<br>vs. Drain-Source Voltage<br>1<br>D = 0.7<br>D = 0.5 ee<br>D = 0.3<br>0.1 iE<br>D = 0.1<br>D = 0.9<br>D = 0.05<br>R θJA (t) = r(t) * R θJA<br>R θJA  = 205°C/W<br>D = 0.02<br>0.01 D = 0.01 P(pk)<br>t1<br>D = 0.005 T J - T A t =2 P * R θJA (t)<br>Duty Cycle, D = t1/t2<br>D = Single Pulse<br>0.001<br>0.0001 0.001 0.01 0.1 1 10 100 1,000<br>t1, PULSE DURATION TIME (s)<br>Fig. 11 Transient Thermal Response<br>C, CAPACITANCE (pF)<br>, DRAIN-SOURCE LEAKAGE CURRENT (nA)<br>IDSS<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 7) 

|**Ordering Informationg Information Information** (Note 7)|||
|---|---|---|
|**Part Number**|**Case**|**Packaging**|
|DMN2020LSN-7|SC-59|3000/Tape &Reel|



Notes: 7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. 

## **Marking Information** 

|Date CodeKey<br>**Year**<br>**2009**<br>**Code**<br>W<br>~~a~~|Date CodeKey<br>**Year**<br>**2009**<br>**Code**<br>W<br>~~a~~|||**2010**<br>X<br>**N1A**<br>~~a~~|**2010**<br>X<br>**N1A**<br>~~a~~|**YM**||**2011**<br>**2012**<br>**2013**<br>Y<br>Z<br>A<br>N1A = Product Type Marking Code<br>YM = Date Code Marking<br>Y = Year (ex: W = 2009)<br>M = Month (ex: 9 = September)|||**2014**<br>B|||**2015**<br>C|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|**Month**<br>**Jan**<br>**Code**<br>1<br>~~oo~~||**Feb**<br>2||**Mar**<br>3|**Apr**<br>4|||**May**<br>**Jun**<br>**Jul**<br>**Aug**<br>5<br>6<br>7<br>8|**Sep**<br>9||**Oct**<br>O||**Nov**<br>N|**Dec**<br>D|



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DMN2020LSN Document number: DS31946 Rev. 3 - 2 

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**DMN2020LSN** 

## **Package Outline Dimensions** 

**==> picture [142 x 132] intentionally omitted <==**

**----- Start of picture text -----**<br>
A<br>B C<br>a<br>G<br>H<br>K N M<br>J<br>D L<br>**----- End of picture text -----**<br>


|**SC-59**|**SC-59**|**SC-59**|**SC-59**|
|---|---|---|---|
|**Dim**<br>~~e====~~|**Min**<br>~~e====~~|**Max**<br>~~e====~~|**Typ**<br>~~e====~~|
|**A**<br>~~e====~~|0.35<br>~~e====~~|0.50<br>~~e====~~|**yp**<br>0.38<br>~~e====~~|
|**B**<br>~~e====~~|1.50<br>~~e====~~|1.70<br>~~e====~~|1.60<br>~~e====~~|
|**C**<br>~~e====~~|2.70<br>~~e====~~|3.00<br>~~e====~~|2.80<br>~~e====~~|
|**D**<br>~~e====~~|-<br>~~e====~~|-<br>~~e====~~|0.95<br>~~e====~~|
|**G**<br>~~e====~~|-<br>~~e====~~|-<br>~~e====~~|1.90<br>~~e====~~|
|**H**<br>~~e====~~|2.90<br>~~e====~~|3.10<br>~~e====~~|3.00<br>~~e====~~|
|**J**|0.013|0.10|0.05|
|**K**|1.00|1.30|1.10|
|**L**|0.35|0.55|0.40|
|**M**|0.10|0.20|0.15|
|**N**<br>~~es~~|0.70<br>~~ee~~|0.80|0.75|
|α<br>~~es~~|0°<br>~~ee~~|8°|-|
|**All Dimensions in mm**<br>~~es ee~~||||



## **Suggested Pad Layout** 

**==> picture [182 x 109] intentionally omitted <==**

**----- Start of picture text -----**<br>
Y<br>Z<br>ara C<br>X E<br>ic a Eeh<br>**----- End of picture text -----**<br>


|**Dimensions**|**Value (in mm)**|
|---|---|
|**Z**|3.4|
|**X**|0.8|
|**Y**|1.0|
|**C**|2.4|
|**E**|1.35|



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DMN2020LSN Document number: DS31946 Rev. 3 - 2 

August 2011 © Diodes Incorporated 

**DMN2020LSN** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending.  Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

A.   Life support devices or systems are devices or systems which: 

1. are intended to implant into the body, or 

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2011, Diodes Incorporated 

**www.diodes.com** 

6 of 6 **www.diodes.com** 

DMN2020LSN Document number: DS31946 Rev. 3 - 2 

August 2011 © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/DMN2020LSN-7/power-mosfet-n-channel-20-v-69-a-002-ohm-sc-59)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/dmn2020lsn-7/mosfet-n-ch-20v-sc-59-3/dp/2543536RL)
---

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