# Power MOSFET, N Channel, 20 V, 11.6 A, 6800 µohm, U-DFN2020, Surface Mount

![Product image](https://novapart.co/image/farnell:3680121RL/)

**URL**: https://novapart.co/products/DMN2015UFDF-7/power-mosfet-n-channel-20-v-116-a-6800-ohm-u
**SKU**: DMN2015UFDF-7
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.1290
**Stock**: 1000+
**Lead Time**: 106 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 6Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | AEC-Q101 |
| Power Dissipation | 1.8W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 4.5V |
| Transistor Case Style | U-DFN2020 |
| Drain Source Voltage Vds | 20V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 11.6A |
| Drain Source On State Resistance | 6800µohm |
| Gate Source Threshold Voltage Max | 1.2V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3680121RL/)

**DMN2015UFDF** 

**20V N-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

|**BVDSS**|**RDS(ON) max**|**ID max**<br>**TA = +25°C**|
|---|---|---|
|20V|9mΩ @ VGS= 4.5V|15.2A|
||15mΩ @ VGS= 2.5V|13.8A|



## **Features** 

- 0.6mm Profile – Ideal for Low Profile Applications 

- PCB Footprint of 4mm[2] 

- Low Gate Threshold Voltage 

- Low On-Resistance 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

## **Description** 

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. 

- **For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/** 

## **Applications** 

- General Purpose Interfacing Switch 

- Power Management Functions 

## **Mechanical Data** 

- Case: U-DFN2020-6 

- Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminals: Finish – NiPdAu over Copper Leadframe. Solderable per MIL-STD-202, Method 208 **e4** 

 

- Weight: 0.007 grams (Approximate) 

U-DFN2020-6 (Type F) 

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D<br>G<br>@es . ®<br>Pin1  S<br>Pin Out<br>Top View  Bottom View  Bottom View  Equivalent Circuit<br>**----- End of picture text -----**<br>


Top View 

## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|
|---|---|---|
||||
|**Part Number**|**Case**|**Packaging**|
|DMN2015UFDF-7|U-DFN2020-6(Type F)|3,000/Tape & Reel|
|DMN2015UFDF-13|U-DFN2020-6 (TypeF)|10,000/Tape &Reel|



- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and 

Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

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DMN2015UFDF Datasheet number: DS37830 Rev. 4 - 2 

January 2020 © Diodes Incorporated 

**www.diodes.com** 

**DMN2015UFDF** 

## **Marking Information** 

Site 1 

5N = Product Type Marking Code 5N **N4** YM = Date Code Marking Y = Year (ex: H = 2020) M = Month (ex: 9 = September) Date Code Key **Year 2016 … 2020 2021 2022 2023 2024 2025 2026 2027 2028 2029** ~~es~~ **Code** D … H ~~ee~~ I ~~ee~~ J ~~ee~~ K ~~ee~~ L ~~ee~~ M ~~ee~~ N ~~ee~~ O ~~ee~~ P R **Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec** ~~ee~~ **Code** 1 2 3 4 5 ~~ee~~ 6 7 ~~ee~~ 8 ~~ee~~ 9 ~~ee~~ O ~~oe~~ N D Site 2 5N = Product Type Marking Code YWX = Date Code Marking **5N** Y = Year (ex: 0 = 2020) W = Week (ex: a = week 27; z represents week 52 and 53) X = Internal Code (ex: U = Monday) Date Code Key 

**Year 2016 … 2020 2021 2022 2023 2024 2025 2026 2027 2028 2029** ~~ee~~ **Code** 6 … 0 1 2 3 4 5 6 7 8 9 **Week 1-26 27-52 53 Code** A-Z a-z z ~~a ee ee ee ee ee~~ **Internal Code Sun Mon Tue Wed Thu Fri Sat** ~~—ee~~ **Code** T U V W X Y Z 

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**DMN2015UFDF** 

**Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

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||||||
|---|---|---|---|---|
|Characteristic|Symbol|Value|Unit|
|Drain-Source Voltage|VDSS|20|V|
|Gate-Source Voltage|VGSS|±12|V|
|Steady State|TTAA = +25°C  = +70°C|ID|11.6 9.3|A|
|Continuous Drain Current (Note 6) VGS = 4.5V|
|t<10s|TTAA = +25°C  = +70°C|ID|15.2 12.2|A|
|Pulsed Drain Current (380µs Pulse, Duty Cycle = 1%)|IDM|70|A|
|Maximum Body Diode Continuous Current (Note 6)|IS|2.1|A|
|Avalanche Current (Note 7) L = 0.1mH|IAS|23|A|
|Avalanche Energy|(Note 7) L = 0.1mH|EAS|28|mJ|

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## **Thermal Characteristics** 

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||||||
|---|---|---|---|---|
|Characteristic|Symbol|Value|Unit|
|TA = +25°C|0.8|
|Total Power Dissipation (Note 5)|PD|W|
|TA = +70°C|0.5|
|Steady|state|159|
|Thermal Resistance, Junction to Ambient (Note 5)|RJA|°C/W|
|t<10s|110|
|TA = +25°C|1.8|
|Total Power Dissipation (Note 6)|PD|W|
|TA = +70°C|1.2|
|Steady state|70|
|Thermal Resistance, Junction to Ambient (Note 6)|RJA|
|t<10s|40|°C/W|
|Thermal Resistance, Junction to Case (Note 6)|RJC|14|
|Operating and Storage Temperature Range|TJ,|TSTG|-55 to +150|°C|

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|||||||||
|---|---|---|---|---|---|---|---|
|Electrical Characteristics|(@TA = +25°C, unless otherwise specified.)|
|Characteristic|Symbol|Min|Typ|Max|Unit|Test Condition|
|OFF CHARACTERISTICS (Note 8)|
|Drain-Source Breakdown Voltage|BVDSS|20|—|—|V|VGS = 0V, ID = 250μA|
|Zero Gate Voltage Drain Current TJ = +25°C|IDSS|—|—|1|μA|VDS = 16V, VGS = 0V|
|Gate-Source Leakage|IGSS|—|—|±100|nA|VGS = ±12V, VDS = 0V|
|ee|ON CHARACTERISTICS (Note 8)|eee|
|Gate Threshold Voltage|VGS(TH)|0.4|—|1.2|V|VDS = VGS, ID = 250μA|
|eeee|6.8|9|VGS = 4.5V, ID = 8.5A|
|7.6|15|VGS = 2.5V, ID = 8.5A|
|Static Drain-Source On-Resistance|RDS(ON)|—|mΩ|
|11|30|VGS = 1.8V, ID = 5A|
|18|50|VGS = 1.5V, ID = 3A|
|||Diode Forward Voltage|VSD|—|0.75|1.2|V|VGS = 0V, IS = 8.5A|
|DYNAMIC CHARACTERISTICS (Note 9)|
|Input Capacitance|Ciss|||—|ES|1439|—|pF|
|Output Capacitance|Coss|—|224|—|pF|VDS = 10V, VGS = 0V,|
|f = 1.0MHz|
|Reverse Transfer Capacitance|Crss|—|202|—|pF|
|Gate Resistance|Rg|—|1.3|—|Ω|VDS = 0V, VGS = 0V, f = 1MHz|
|GO|Total Gate Charge (VGS = 4.5V)|Qg|—|19.3|—|nC|
|Total Gate Charge (VGS = 10V)|Qg|—|42.3|—|nC|VDS = 10V, ID = 8.5A|
|Gate-Source Charge|Qgs|—|2.5|—|nC|
|Gate-Drain Charge|Qgd|—|4.5|—|nC|
|Turn-On Delay Time|tD(ON)|—|4.7|—|ns|
|Turn-On Rise Time|tR|—|6.9|—|ns|VDS = 10V, ID = 8.5A|
|Turn-Off Delay Time|tD(OFF)|—|23|—|ns|VGS = 4.5V, RG = 1.8Ω|
|Turn-Off Fall Time|tF|—|7.4|—|ns|
|Reverse Recovery Time|tRR|—|11.6|—|ns|
|ee|Reverse Recovery Charge|QRR|—|4.6|—|nC|IF = 8.5A, di/dt = 210A/μs|
|Notes:|5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.|
|6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.|

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7. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C. 

8. Short duration pulse test used to minimize self-heating effect. 

9. Guaranteed by design. Not subject to product testing. 

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30.0<br>VGS = 1.8V<br>25.0 VGS = 2.0V<br>He |<br>VGS = 2.5V<br>20.0 Hr VGS = 3.0V |<br>VGS = 4.0V<br>15.0 li VGS = 4.5V _<br>VGS = 1.5V<br>10.0 VGS = 10V<br>5.0 ———<br>VGS = 1.2V<br>0.0 | —_—<br>0 0.5 1 1.5 2 2.5 3<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 1. Typical Output Characteristic<br>0.025<br>VGS = 1.5V<br>0.02<br>0.015<br>VGS = 1.8V<br>0.01<br>VGS = 2.5V<br>0.005<br>VGS = 4.5V<br>0<br>0 5 10 15 20 25 30<br>ID, DRAIN-SOURCE CURRENT (A)<br>Figure 3. Typical On-Resistance vs. Drain Current and<br>Gate Voltage<br>, DRAIN CURRENT (A)<br>ID<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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0.015<br>VGS = 4.5V<br>0.012<br>TJ = 150 [o] C<br>0.009<br>TJ = 125 [o] C TJ =  85 [o] C<br>0.006<br>TJ = 25 [o] C<br>TJ = -55 [o] C<br>0.003<br>0<br>0 5 10 15 20 25 30<br>ID, DRAIN CURRENT (A)<br>Figure 5. Typical On-Resistance vs. Drain Current and<br>Junction Temperature<br>)(<br>,  DRAIN-SOURCE ON-RESISTANCE<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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30<br>VDS = 5V<br>25<br>eee ee<br>20 ee |e<br>15 ee |e<br>10<br>TJ = 150 [o] C TJ =  85 [o] C<br>5 eee |e<br>TJ = 125 [o] C TJ = 25 [o] C<br>TJ = -55 [o] C<br>0 Dp<br>0 0.5 1 1.5 2 2.5<br>VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 2. Typical Transfer Characteristic<br>0.05<br>0.04 fo<br>0.03 fo<br>0.02 ID = 8.5A<br>yer tt<br>ID = 5.0A<br>0.01 ee ID = 3.0A<br>0 [ieee<br>0 2 4 6 8 10<br>VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 4. Typical Transfer Characteristic<br>2.5<br>2<br>VGS = 4.5V, ID = 10A<br>1.5<br>1<br>VGS = 2.5V, ID = 5A<br>0.5<br>0<br>-50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (℃)<br>Figure 6. On-Resistance Variation with Junction<br>Temperature<br>, DRAIN CURRENT (A)<br>ID<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>(NORMALIZED)<br>, DRAIN-SOURCE ON-RESISTANCE<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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**DMN2015UFDF** —— 

## DIODES 

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0.02<br>0.015<br>VGS = 2.5V, ID = 5A<br>0.01<br>0.005<br>VGS = 4.5V, ID = 10A<br>0<br>-50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (℃)<br>Figure 7. On-Resistance Variation with Junction<br>Temperature<br>30<br>VGS = 0V<br>25 eee || ee<br>20 eee [||]<br>15 ee [|]<br>|<br>10 TJ = 150 [o] C IW)<br>Ha<br>TJ = 125 [o] C TJ =  85 [o] C<br>5 /} I") TJ = 25 [o] C<br>TJ = -55 [o] C<br>0 Dh<br>0 0.3 0.6 0.9 1.2 1.5<br>VSD, SOURCE-DRAIN VOLTAGE (V)<br>Figure 9. Diode Forward Voltage vs Current<br>10<br>8 J |<br>/ y<br>6 y<br>4<br>/Wa VDS = 10V, ID = 8.5A<br>2<br>0 | |<br>0 5 10 15 20 25 30 35 40 45 50<br>Qg (nC)<br>Figure 11. Gate Charge<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>, SOURCE CURRENT (A)<br>IS<br> (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


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1.2<br>1<br>0.8 SRR<br>0.6 ID = 1mA<br>0.4 P r Sa<br>ID = 250µA<br>0.2 efiitesKL<br>0<br>-50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (℃)<br>Figure 8. Gate Threshold Variation vs. Junction<br>Temperature<br>10000<br>f = 1MHz<br>= — a<br>Ciss<br>——<br>1000 ee<br>\___SSS Coss SS<br>Se<br>——————$<$<_<br>100 = Crss<br>a ee eee<br>ee ee es<br>10 es ee<br>0 5 10 15 20<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 10. Typical Junction Capacitance<br>100<br>R<br>DS(ON)<br>Limited<br>FINN<br>10 ANSENNNel<br>| a | DC SNESTT<br>1 PW = 10s<br>PW = 1s<br>FH PW = 100ms QO<br>0.1 ; TJ(Max)  | [dd = 150 ℃ PW = 10ms NNAUTANOND<br>TA = 25 ℃<br>PW = 1ms<br>Single Pulse<br>DUT on 1*MRP Board PW = 100µs<br>VGS = 4.5V<br>0.01 FtBail EBB<br>0.01 0.1 1 10 100<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 12. SOA, Safe Operation Area<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(TH)<br>V<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


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**DMN2015UFDF** ~~[~~ 

## DIODES. 

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1<br>D=0.7<br>SUS E SCENT IES acre e D=0.9 u<br>D=0.5<br>Sm ear og<br>a am ON<br>D=0.3<br>Peel TETITE ETAT | UDA TT PE<br>0.1 TATIT FAMIE CMIAbe?Tl<br>P D=0.1 g<br>D=0.05<br>A<br>LE ZA<br>L vEE EINE ETE TET<br>D=0.02<br>0.01 e ee<br>BF D=0.01 AraU ee ee<br>D=0.005<br>a Za | RθJA (t) = r(t) * RθJA Baill<br>RθJA = 158℃/W<br>D=Single Pulse Duty Cycle, D = t1/t2<br>0.001<br>1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1, PULSE DURATION TIME (sec)<br>Figure 13. Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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**DMN2015UFDF** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**U-DFN2020-6 (Type F)** 

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**----- Start of picture text -----**<br>
U-DFN2020-6<br>A1 A3 (Type F)<br>A<br>Dim  Min  Max  Typ<br>Seating Plane A  0.57  0.63 0.60<br>T eeelp  Eoae A1  0.00 0.05 0.03<br>A3 -  -  0.15<br>b  0.25 0.35 0.30<br>D<br>D  1.95 2.05 2.00<br>e3 e4 D2  0.85 1.05 0.95<br>D2a  0.33 0.43 0.38<br>E  1.95 2.05 2.00<br>E2  1.05 1.25 1.15<br>k2<br>E2a  0.65 0.75 0.70<br>D2a<br>z2 e  0.65 BSC<br>e2  0.863 BSC<br>D2 e3  0.70 BSC<br>E E2a E2<br>e4  0.325 BSC<br>k  0.37 BSC<br>k1<br>k e2 L k1 k2  00.1.365 B BSCSC<br>z1<br>L  0.225 0.325 0.275<br>z  0.20 BSC<br>z1  0.110 BSC<br>e b z2  0.20 BSC<br>z(4x) teat = All Dimensions in mm<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**U-DFN2020-6 (Type F)** 

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X3<br>C X Y<br>Y3 Y2 Y1 Y4<br>| Saistiky<br>X1<br>Pin1<br>hae<br>| X2 2 cl,<br>**----- End of picture text -----**<br>


|**Dimensions**|**Value**<br>**(in mm)**|
|---|---|
|**C**|0.650|
|**X**|0.400|
|**X**<br>**X1**|0.400<br>0.480|
|**X2**|0.950|
|**X3**|1.700|
|**Y**|0.425|
|**Y1**|0.800|
|**Y2**<br>**Y3**|1.150<br>1.450|
|**Y3**|1.450|
|**Y4**|2.300|



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DMN2015UFDF Datasheet number: DS37830 Rev. 4 - 2 

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**DMN2015UFDF** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

- B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2020, Diodes Incorporated 

**www.diodes.com** 

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DMN2015UFDF Datasheet number: DS37830 Rev. 4 - 2 

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- [Supplier page](https://es.farnell.com/diodes-inc/dmn2015ufdf-7/mosfet-n-ch-20v-11-6a-u-dfn2020/dp/3680121RL)
---

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