# Power MOSFET, N Channel, 20 V, 10.5 A, 8400 µohm, U-DFN2020, Surface Mount

![Product image](https://novapart.co/image/farnell:3680120/)

**URL**: https://novapart.co/products/DMN2013UFDE-7/power-mosfet-n-channel-20-v-105-a-8400-ohm-u
**SKU**: DMN2013UFDE-7
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.2870
**Stock**: 1000+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 6Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | AEC-Q101 |
| Power Dissipation | 2.03W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 4.5V |
| Transistor Case Style | U-DFN2020 |
| Drain Source Voltage Vds | 20V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 10.5A |
| Drain Source On State Resistance | 8400µohm |
| Gate Source Threshold Voltage Max | 1.1V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3680120/)

**DMN2013UFDE 20V N-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

|**BVDSS**<br>**RDS(ON) MAX**<br>**Package**<br>**ID **<br>**TA = +25°C**<br>20V<br>11m@ VGS= 4.5V<br>U-DFN2020-6<br>(Type E)<br>10.5A<br>13mΩ @ VGS= 2.5V<br>U-DFN2020-6<br>(Type E)<br>9.4A<br>30m@ VGS= 1.8V<br>U-DFN2020-6<br>(Type E)<br>6.5A<br>50mΩ @ VGS= 1.5V<br>U-DFN2020-6<br>(Type E)<br>5.5A|**BVDSS**<br>**RDS(ON) MAX**<br>**Package**<br>**ID **<br>**TA = +25°C**<br>20V<br>11m@ VGS= 4.5V<br>U-DFN2020-6<br>(Type E)<br>10.5A<br>13mΩ @ VGS= 2.5V<br>U-DFN2020-6<br>(Type E)<br>9.4A<br>30m@ VGS= 1.8V<br>U-DFN2020-6<br>(Type E)<br>6.5A<br>50mΩ @ VGS= 1.5V<br>U-DFN2020-6<br>(Type E)<br>5.5A|**BVDSS**<br>**RDS(ON) MAX**<br>**Package**<br>**ID **<br>**TA = +25°C**<br>20V<br>11m@ VGS= 4.5V<br>U-DFN2020-6<br>(Type E)<br>10.5A<br>13mΩ @ VGS= 2.5V<br>U-DFN2020-6<br>(Type E)<br>9.4A<br>30m@ VGS= 1.8V<br>U-DFN2020-6<br>(Type E)<br>6.5A<br>50mΩ @ VGS= 1.5V<br>U-DFN2020-6<br>(Type E)<br>5.5A|**BVDSS**<br>**RDS(ON) MAX**<br>**Package**<br>**ID **<br>**TA = +25°C**<br>20V<br>11m@ VGS= 4.5V<br>U-DFN2020-6<br>(Type E)<br>10.5A<br>13mΩ @ VGS= 2.5V<br>U-DFN2020-6<br>(Type E)<br>9.4A<br>30m@ VGS= 1.8V<br>U-DFN2020-6<br>(Type E)<br>6.5A<br>50mΩ @ VGS= 1.5V<br>U-DFN2020-6<br>(Type E)<br>5.5A|
|---|---|---|---|
|**BVDSS**|**RDS(ON) MAX**|**Package**|**ID **<br>**TA = +25°C**|
|20V|11m@ VGS= 4.5V|U-DFN2020-6<br>(Type E)|10.5A|
||13mΩ @ VGS= 2.5V|U-DFN2020-6<br>(Type E)|9.4A|
||30m@ VGS= 1.8V|U-DFN2020-6<br>(Type E)|6.5A|
||50mΩ @ VGS= 1.5V|U-DFN2020-6<br>(Type E)|5.5A|



## **Features** 

- 0.6mm Profile – Ideal for Low Profile  Applications 

- PCB Footprint of 4mm[2] 

- Low Gate Threshold Voltage 

- ESD Protected Gate 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please** 

   - **contact us or your local Diodes representative.** 

## **Description** 

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications. 

   - **https://www.diodes.com/quality/product-definitions/** 

- **An Automotive-Compliant Part is Available Under Separate Datasheet (DMN2013UFDEQ)** 

## **Mechanical Data** 

- Case: U-DFN2020-6 

## **Applications** 

- General Purpose Interfacing Switch 

- Power Management Functions 

- Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminals: Finish – NiPdAu over Copper Leadframe. Solderable per MIL-STD-202, Method 208 © **e4** 

- Weight: 0.0065 grams (Approximate) 

U-DFN2020-6  (Type E) 

ESD PROTECTED 

Bottom View 

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Pin Out  Equivalent Circuit<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information**(Note 4)|**Ordering Informationg Information Information**(Note 4)|**Ordering Informationg Information Information**(Note 4)|**Ordering Informationg Information Information**(Note 4)|
|---|---|---|---|
|||||
|**Part Number**|**Compliance**|**Case**|**Quantity per Reel**|
|DMN2013UFDE-7|Standard|U-DFN2020-6(Type E)|3,000|
|DMN2013UFDE-13|Standard|U-DFN2020-6(Type E)|10,000|



- Notes:        1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

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**DMN2013UFDE** 

## **Marking Information** 

**Site 1** 

N6 = Product Type Marking Code **N6** YM = Date Code Marking Y = Year (ex: I = 2021) M = Month (ex: 9 = September) - Date Code Key **Year 2012 … 2021 2022 2023 2024 2025 2026 2027 2028 2029 2030** ~~ee~~ **Code** Z … I J K L M N O P R S **Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code** 1 2 3 4 5 6 7 8 9 O N D ~~—— e~~ ~~**e** s es eseeee ee eeeeee ee~~ Site 2 N6 = Product Type Marking Code YWX = Date Code Marking **N6** Y = Year (ex: 1 = 2021) W = Week (ex: a = week 27; z Represents Week 52 and 53) X = Internal Code (ex: U = Monday) = Date Code Key 

**Year 2012 … 2021 2022 2023 2024 2025 2026 2027 2028 2029 2030** ~~ee~~ **Code** 2 … 1 2 3 ~~ee~~ 4 ~~ee~~ 5 ~~ee~~ 6 ~~ee~~ 7 ~~ee~~ 8 ~~ee~~ 9 0 **Week 1-26 27-52 53 Code** A-Z a-z z ~~eeee~~ **Internal Code Sun Mon Tue Wed Thu Fri Sat** ~~es~~ **Code** T U V W X Y Z 

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## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|
|||||||
|**Characteristic**|||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage|||VDSS|20|V|
|Gate-Source Voltage|||VGSS|±8|V|
|Continuous Drain Current (Note 6) VGS= 4.5V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|10.5<br>8.5|A|
||t < 10s|TA= +25°C<br>TA= +70°C|ID|12.5<br>10.0|A|
|Continuous Drain Current (Note 6) VGS= 2.5V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|9.4<br>7.5|A|
||t < 10s|TA= +25°C<br>TA= +70°C|ID|11.2<br>8.8|A|
|Pulsed Drain Current(10µs Pulse,DutyCycle = 1%)|||IDM|80|A|
|Maximum BodyDiode Continuous Current|||IS|2.5|A|



## **Thermal Characteristics** 

|**Thermal Characteristics**|**Thermal Characteristics**||||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Total Power Dissipation (Note 5)|TA= +25°C|PD|0.66|W|
||TA= +70°C||0.42||
|Thermal Resistance, Junction to Ambient (Note 5)|SteadyState|RJA|189|°C/W|
||t<10s||132||
|Total Power Dissipation (Note 6)|TA= +25°C|PD|2.03|W|
||TA= +70°C||1.31||
|Thermal Resistance, Junction to Ambient (Note 6)|SteadyState|RJA|61|°C/W|
||t<10s||43||
|Thermal Resistance, Junction to Case(Note 6)||RJC|9.3||
|Operatingand Storage Temperature Range||TJ, TSTG|-55 to +150|°C|



## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**|**Symbol**|**Min**|**Typ **|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS(Note 7)**|||||||
|Drain-Source Breakdown Voltage|BVDSS|20|—|—|V|VGS= 0V,ID= 250μA|
|Zero Gate Voltage Drain Current TJ= +25°C|IDSS|—|—|1|µA|VDS= 16V,VGS= 0V|
|Gate-Source Leakage|IGSS|—|—|±2|µA|VGS= ±8V,VDS= 0V|
|**ON CHARACTERISTICS(Note 7)**|||||||
|Gate Threshold Voltage<br>~~TF~~|VGS(TH)<br>~~TF~~|0.5<br>~~TF EE~~|—<br>~~EE~~|1.1<br>~~EE~~|V<br>~~EE~~|VDS= VGS,ID= 250μA<br>~~EE~~|
|Static Drain-Source On-Resistance<br>~~TF~~|RDS(ON)<br>~~TF~~|—<br>~~TF EE~~|8.4<br>~~EE~~|11<br>~~EE~~|m<br>~~EE~~|VGS= 4.5V,ID= 8.5A<br>~~EE~~|
||||9.8<br>~~EE~~|13<br>~~EE~~||VGS= 2.5V,ID= 8.5A<br>~~EE~~|
||||12<br>~~EE~~|30<br>~~EE~~||VGS= 1.8V,ID= 1A<br>~~EE~~|
||||15<br>~~EE~~|50<br>~~EE~~||VGS= 1.5V,ID= 0.5A<br>~~EE~~|
|Forward Transfer Admittance<br>~~TF~~||Yfs|<br>~~TF~~|—<br>~~TF EE~~|10<br>~~EE~~|—<br>~~EE~~|S<br>~~EE~~|VDS= 5V,ID= 4A<br>~~EE~~|
|Diode Forward Voltage<br>~~TF~~|VSD<br>~~TF~~|—<br>~~TF EE~~|—<br>~~EE~~|1.2<br>~~EE~~|V<br>~~EE~~|VGS= 0V,IS= 8.5A<br>~~EE~~|
|**DYNAMIC CHARACTERISTICS(Note 8)**<br>~~ee~~|||||||
|Input Capacitance<br>~~———~~|Ciss<br>~~———~~<br>~~ee~~|—<br>~~———~~<br>~~ee~~|2453<br>~~———~~<br>~~ee~~|—<br>~~———~~<br>~~ee~~|pF<br>~~———~~|VDS= 10V, VGS= 0V,<br>f = 1.0MHz<br>~~———~~|
|Output Capacitance<br>~~———~~|Coss<br>~~———~~<br>~~ee~~|—<br>~~———~~<br>~~ee~~|275<br>~~———~~<br>~~ee~~|—<br>~~———~~<br>~~ee~~|pF<br>~~———~~||
|Reverse Transfer Capacitance<br>~~———~~|Crss<br>~~———~~<br>~~ee~~|—<br>~~———~~<br>~~ee~~|257<br>~~———~~<br>~~ee~~|—<br>~~———~~<br>~~ee~~|pF<br>~~———~~||
|Gate Resistance<br>~~———~~|Rg<br>~~———~~<br>~~ee~~|—<br>~~———~~<br>~~ee~~|1.2<br>~~———~~<br>~~ee~~|—<br>~~———~~<br>~~ee~~|Ω<br>~~———~~|VDS= 0V,VGS= 0V,f = 1MHz<br>~~———~~|
|Total Gate Charge(VGS= 4.5V)|Qg<br>~~ee~~|—<br>~~ee~~|14.3<br>~~ee~~|—<br>~~ee~~|nC|VDS= 10V, ID= 8.5A<br>~~ee~~|
|Total Gate Charge(VGS= 8V)|Qg|—|25.8|—|nC||
|Gate-Source Charge|Qgs|—|1.8|—|nC||
|Gate-Drain Charge<br>~~——<—~~|Qgd|—|2.1|—<br>~~ee~~|nC<br>~~ee~~||
|Turn-On DelayTime<br>~~——<—~~|tD(ON)|—|9.9|—<br>~~ee~~|ns<br>~~ee~~|VDS= 10V, ID = 8.5A<br>VGS= 4.5V, RG= 1.8Ω<br>~~ee~~|
|Turn-On Rise Time<br>~~——<—~~|tR|—|24.5|—<br>~~ee~~|ns<br>~~ee~~||
|Turn-Off DelayTime<br>~~——<—~~|tD(OFF)|—|66.4|—<br>~~ee~~|ns<br>~~ee~~||
|Turn-Off Fall Time<br>~~——<—~~|tF|—|20.8|—<br>~~ee~~|ns<br>~~ee~~||



- Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 

   8. Guaranteed by design. Not subject to production testing. 

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30 20<br>V     = 5.0VDS<br>25<br>Fe oT.<br>15<br>20<br>15 10<br>T   = 150°CA<br>10 eo T   = 125°CA<br>5 T   = 85°CA<br>5 j T   = 25°CA<br>T   = -55°CA<br>0 0<br>0 0.5 1 1.5 2<br>VDS, DRAIN-SOURCE VOLTAGE (V) V   , GATE-SOURCE VOLTAGE (V)GS<br>Fig.1 Typical Output Characteristic Fig.2 Typical Transfer Characteristics<br>0.020 0.020<br>V     = 4.5VGS<br>0.015 0.015<br>VGS = 1.5V<br>T   = 125°CA T   = 150°CA<br>0.010 V GS = 1.8V 0.010 T   = 85°CA<br>VGS = 2.5V T   = 25°CA<br>VGS = 4.5V<br>0.005 0.005 T   = -55°CA<br>0 0<br>0 4 8 12 16 20 0 5 10 15 20<br>ID, DRAIN-SOURCE CURRENT (A) I  , DRAIN CURRENTD (A)<br>Fig. 3 Typical On-Resistance vs.  Fig. 4 Typical On-Resistance vs.<br>Drain Current and Gate Voltage  Drain Current and Temperature<br>1.8 0.020<br>1.6<br>1.4 oA VGSI D   2.5== 5A V 0.015 VGSID  2= 5A= .5V<br>1.2 V GS = 4.5V 0.010<br>ID = 10A VGS  4.5= V<br>ID = 10A<br>1.0 anne as Te<br>0.005<br>0.8 eee<br>0.6 0<br>-5050 P -25 reeeen 0 25 50 75 100 125 150 =o - 50 LLL -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C)<br>Fig. 5 On-Resistance Variation with Temperature Fig. 6 On-Resistance Variation with Temperature<br>, DRAIN CURRENT (A)<br>ID<br>)<br><br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>DS(ON)<br>D<br>, DRAIN CURRENT (A)<br> I<br>, DRAIN-SOURCE<br>DS(ON)<br>R<br>ON-RESISTANCE (NORMALIZED)<br>DS(ON)<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>**----- End of picture text -----**<br>


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20<br>1.4<br>1.2<br>15<br>1.0<br>0.8<br>| | | | I   = 1mAD tt | 10 aa TTA A= 25°C= 25癈 Py<br>0.6 SSS—_—_—_:. Z |<br>I   = 250µAD<br>oer<br>0.4 5<br>CCCCCensS<br>0.2<br>0 TET Tt 0 LT LALE<br>-50 -25 0 25 50 75 100 125 150 0 0.2 0.4 0.6 0.8 1.0 1.2<br>T , JUNCTION TEMPERATURE ( C)J  VSD, SOURCE-DRAIN VOLTAGE (V)<br>Fig. 7 Gate Threshold Variation vs. Junction Temperature Fig. 8 Diode Forward Voltage vs. Current<br>10,000 ETaSeCO 10 {ti WA<br>8 VDS = 10V, ID  8.5= A<br>—- ++ — Sagee7ett yt<br>C iss<br>tity<br>6<br>== fo<br>1,000<br>bo CEPRtT tf<br>a |<br>4<br>StSe Coss [yi] ttt tf<br>2<br>Crss<br>f = 1MHz<br>100 a a melt] tt | ff<br>0 5 10 15 20 0 0 Ai 5 10 | 15 | 20 | 25 tt 30 ft 35 40<br>VFig. 9 Typical Junction CapacitanceDS, DRAIN-SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE  (nC)<br>Fig. 10 Gate Charge<br>100<br>Pt tt RLimitedDS(on) MN NS P P S WW =  =  10 0 0µs 祍 |<br>10<br>DC<br>el RAR TPO<br>1 el PW = 10sPW = 1s ENAINGTTN|<br>PW = 100ms<br>PW = 10ms<br>0.1 | T J(max)J(max) == 150 150癈°C  PW = 1ms NWAL<br>T AA  =  2525°C 癈<br>VGS = 8V<br>Single Pulse ee<br>DUT on 1 * MRP Board<br>0.01 1<br>0.01 0.1 1 10 100<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 11 SOA, Safe Operation Area<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(TH)<br>V<br>, GATE-SOURCE VOLTAGE (V)<br>GS<br>V<br>, DRAIN CURRENT (A)<br>ID<br>T<br>, JUNCTION CAPACITANCE (pF)<br>C<br>, SOURCE CURRENT (V)<br>IS<br> GATE THRESHOLD VOLTAGE (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
1 Se D = 0.9<br>D = 0.7<br>SS [se] rr ae<br>en D = 0.5<br>peHHO D = 0.3 tH eHTt<br>0.1 PEUIT D = 0.1 ATIM ETI LT<br>e e Cd ig mmeenansTeens CLE  aCELE ace | eee es Cd fd ee kd | CECT<br>c<br>oTyy<br>ae D = 0.05<br>Eg<br>D = 0.02<br>A<br>0.01 mmmLyTE D = 0.01 eA [Se] [Se] [eae] SSHTAIN TTI EE TUTTI<br>ee<br>D = 0.005<br>Le ie Cr Ce R JA(t)  = r (t)  * R JA  Co<br>00 RJA = 65C/W man<br>D = Single Pulse Duty Cycle, D = t1/t2<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000<br>t1, PULSE DURATION TIME (sec)<br>Fig. 12 Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **U-DFN2020-6 (Type E)** 

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U-DFN2020-6<br>Type E<br>A1 A3 Dim  Min  Max  Typ<br>A A  0.57  0.63 0.60<br>A1  0 0.05 0.03<br>A3    0.15<br>fal, Ee<br>D b  0.25 0.35 0.30<br>b1  0.185 0.285 0.235<br>D  1.95 2.05 2.00<br>corals b1 K1 ==== D2 E  01..9585 1.2.0505 02..9500<br>“ETA D2 ===<br>E2  1.40 1.60 1.50<br>E E2 L 1 L(2X)  e    0.65<br>L  0.25 0.35 0.30<br>K2 L1  0.82  0.92  0.87<br>K1    0.305<br>K2    0.225<br>Z(4X) e b(6X)<br>a Ee Z    0.20<br>All Dimensions in mm<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **U-DFN2020-6 (Type E)** 

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X2<br>Y3 Y2 Y1<br>[Re<br>X1<br>X(6x) C Y (2x)<br>**----- End of picture text -----**<br>


|**Dimensions**|**Value**<br>**(in mm)**|
|---|---|
|**C**|0.650|
|**X**|0.400|
|**X1**|0.285|
|**X2**|1.050|
|**Y**|0.500|
|**Y1**|0.920|
|**Y2**|1.600|
|**Y3**|2.300|



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DMN2013UFDE Document number: DS35701 Rev.8 - 2 

March 2021 © Diodes Incorporated 

**DMN2013UFDE** 

## **IMPORTANT NOTICE** 

1. DIODES INCORPORATED AND ITS SUBSIDIARIES (“DIODES”) MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

2. The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engineering customers and users who design with Diodes products. Diodes products may be used to facilitate safety-related applications; however, in all instances customers and users are responsible for (a) selecting the appropriate Diodes products for their applications, (b) evaluating the suitability of the Diodes products for their intended applications, (c) ensuring their applications, which incorporate Diodes products, comply the applicable legal and regulatory requirements as well as safety and functional-safety related standards, and (d) ensuring they design with appropriate safeguards (including testing, validation, quality control techniques, redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risks associated with their applications. 

3. Diodes assumes no liability for any application-related information, support, assistance or feedback that may be provided by Diodes from time to time. Any customer or user of this document or products described herein will assume all risks and liabilities associated with such use, and will hold Diodes and all companies whose products are represented herein or on Diodes’ websites, harmless against all damages and liabilities. 

4. Products described herein may be covered by one or more United States, international or foreign patents and pending patent applications. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks and trademark applications. Diodes does not convey any license under any of its intellectual property rights or the rights of any third parties (including third parties whose products and services may be described in this document or on Diodes’ website) under this document. 

5. Diodes products are provided subject to Diodes’ Standard Terms and Conditions of Sale (https://www.diodes.com/about/company/terms-and-conditions/terms-and-conditions-of-sales/)  or other applicable terms. This document does not alter or expand the applicable warranties provided by Diodes. Diodes does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. 

6. Diodes products and technology may not be used for or incorporated into any products or systems whose manufacture, use or sale is prohibited under any applicable laws and regulations. Should customers or users use Diodes products in contravention of any applicable laws or regulations, or for any unintended or unauthorized application, customers and users will (a) be solely responsible for any damages, losses or penalties arising in connection therewith or as a result thereof, and (b) indemnify and hold Diodes and its representatives and agents harmless against any and all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim relating to any noncompliance with the applicable laws and regulations, as well as any unintended or unauthorized application. 

7. While efforts have been made to ensure the information contained in this document is accurate, complete and current, it may contain technical inaccuracies, omissions and typographical errors. Diodes does not warrant that information contained in this document is error-free and Diodes is under no obligation to update or otherwise correct this information. Notwithstanding the foregoing, Diodes reserves the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes. 

8. Any unauthorized copying, modification, distribution, transmission, display or other use of this document (or any portion hereof) is prohibited. Diodes assumes no responsibility for any losses incurred by the customers or users or any third parties arising from any such unauthorized use. 

Copyright © 2021 Diodes Incorporated 

**www.diodes.com** 

8 of 8 **www.diodes.com** 

DMN2013UFDE Document number: DS35701 Rev.8 - 2 

March 2021 © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/DMN2013UFDE-7/power-mosfet-n-channel-20-v-105-a-8400-ohm-u)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/dmn2013ufde-7/mosfet-n-ch-20v-10-5a-u-dfn2020/dp/3680120)
---

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