# Power MOSFET, N Channel, 100 V, 2.24 A, 0.172 ohm, TSOT-26, Surface Mount

![Product image](https://novapart.co/image/farnell:3943523/)

**URL**: https://novapart.co/products/DMN10H220LVT-7/power-mosfet-n-channel-100-v-224-a-0172-ohm-tsot
**SKU**: DMN10H220LVT-7
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.1610
**Stock**: 10+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 6Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 1.67W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TSOT-26 |
| Drain Source Voltage Vds | 100V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 2.24A |
| Drain Source On State Resistance | 0.172ohm |
| Gate Source Threshold Voltage Max | 1.8V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943523/)

**DMN10H220LVT** &. -—— **100V N-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|
||||
|**V(BR)DSS**|**RDS(on) max**|**ID**<br>**TA = +25°C**|
|100V|220mΩ @ VGS= 10V|2.24A|
||250mΩ @ VGS= 4.5V|2.10A|



## **Features and Benefits** 

- Low  Input Capacitance 

- Low On-Resistance 

- Fast Switching Speed 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

## **Description** 

## **Mechanical Data** 

- Case: TSOT26 

This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. 

- Case Material: Molded Plastic, “Green” Molding Compound; UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminal Connections: See Diagram 

## **Applications** 

- DC-DC Converters 

- Power Management Functions 

   - Terminals: Finish – Tin Finish Annealed over Copper Leadframe; Solderable per MIL-STD-202, Method 208 

   - Weight: 0.013 grams (Approximate) 

- Backlighting 

**==> picture [312 x 111] intentionally omitted <==**

**----- Start of picture text -----**<br>
TSOT26<br>D 1 6 D<br>D 2 5 D<br>G 3 4 S<br>Wie ©<br>Top View  Top View  Equivalent Circuit<br>Pin Configuration<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|
|---|---|---|
||||
|**Part Number**|**Case**|**Packaging**|
|DMN10H220LVT-7|TSOT26|3,000/Tape & Reel|
|DMN10H220LVT-13|TSOT26|10,000/Tape &Reel|



- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 

   2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. 

## **Marking Information** 

220 = Product Type Marking Code YM = Date Code Marking Y or Y = Year (ex: C = 2015) M = Month (ex: 9 = September) 

**220** YM = Date Code Marking Y or Y = Year (ex: C = 2015) M = Month (ex: 9 = September) Date Code Key **Year 2015 2016 2017 2018 2019 2020 2021 2022 Code** C D E F G H I J ~~a ee es ee ee~~ **Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec** ~~ee~~ **Code** 1 2 ~~ee~~ 3 ~~ee~~ 4 ~~ee~~ 5 6 7 8 9 O N D DMN10H220LVT 1 of 7 April 2015 Document number: DS37958  Rev. 2 - 2 **www.diodes.com** © Diodes Incorporated 

**DMN10H220LVT** 

**Maximum Ratings** (@TA = +25°C unless otherwise specified.) 

|**Maximum Ratingsgss** (@TA = +25°C unless otherwise specified.)A = +25°C unless otherwise specified.)= +25°C unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C unless otherwise specified.)A = +25°C unless otherwise specified.)= +25°C unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C unless otherwise specified.)A = +25°C unless otherwise specified.)= +25°C unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C unless otherwise specified.)A = +25°C unless otherwise specified.)= +25°C unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C unless otherwise specified.)A = +25°C unless otherwise specified.)= +25°C unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C unless otherwise specified.)A = +25°C unless otherwise specified.)= +25°C unless otherwise specified.)|
|---|---|---|---|---|---|
|||||||
|**Characteristic**|||**Symbol**|**Value**|**Units**|
|Drain-Source Voltage|||VDSS|100|V|
|Gate-Source Voltage|||VGSS|16|V|
|Continuous Drain Current (Note 5) VGS= 10V|(Note 6)|TA= +25C<br>TA= +70C|ID|2.24<br>1.79|A|
||(Note 5)|TA= +25C<br>TA= +70C|ID|1.87<br>1.50|A|
|Maximum Continuous BodyDiode Forward Current(Note 6)|||IS|1.50|A|
|Pulsed Drain Current(10μspulse,dutycycle = 1%)|||IDM|6.60|A|



**Thermal Characteristics** (@TA = +25°C unless otherwise specified.) 

|**Thermal Characteristics** (@TA = +25°C unless otherwise specified.)A = +25°C unless otherwise specified.)= +25°C unless otherwise specified.)|**Thermal Characteristics** (@TA = +25°C unless otherwise specified.)A = +25°C unless otherwise specified.)= +25°C unless otherwise specified.)||||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Units**|
|Total Power Dissipation (Note 6)|TA= +25°C|PD|1.67|W|
||TA= +70°C||1.07||
|Thermal Resistance, Junction to Ambient|(Note 6)|RθJA|75|°C/W|
||(Note 5)||108||
|Operatingand Storage Temperature Range||TJ,TSTG|-55 to +150|°C|



## **Electrical Characteristics** (@TA = +25°C unless otherwise specified.) 

|**Electrical Characteristics**(@TA = +25°C unless otherwise specified.)A = +25°C unless otherwise specified.)= +25°C unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C unless otherwise specified.)A = +25°C unless otherwise specified.)= +25°C unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C unless otherwise specified.)A = +25°C unless otherwise specified.)= +25°C unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C unless otherwise specified.)A = +25°C unless otherwise specified.)= +25°C unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C unless otherwise specified.)A = +25°C unless otherwise specified.)= +25°C unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C unless otherwise specified.)A = +25°C unless otherwise specified.)= +25°C unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C unless otherwise specified.)A = +25°C unless otherwise specified.)= +25°C unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS(Note 7)**|||||||
|Drain-Source Breakdown Voltage|BVDSS|100|—|—|V|VGS= 0V,ID= 250μA|
|Zero Gate Voltage Drain Current|IDSS|—|—|1|μA|VDS= 100V,VGS= 0V|
|Gate-Source Leakage|IGSS|—|—|±100|nA|VGS=16V,VDS= 0V|
|**ON CHARACTERISTICS(Note 7)**|||||||
|Gate Threshold Voltage<br>~~ee~~|VGS(th)<br>~~ee~~|1<br>~~ee~~|1.8<br>~~ee~~|2.5<br>~~ee~~|V<br>~~ee~~|VDS= VGS,ID= 250μA<br>~~ee~~|
|Static Drain-Source On-Resistance<br>~~ee~~|RDS (ON)<br>~~ee~~|—<br>~~ee~~|172<br>~~ee~~|220<br>~~ee~~|mΩ<br>~~ee~~|VGS= 10V,ID= 1.6A<br>~~ee~~|
||||211<br>~~ee~~|250<br>~~ee~~||VGS= 4.5V,ID= 1.3A<br>~~ee~~|
|Diode Forward Voltage<br>~~ee~~|VSD<br>~~ee~~|—<br>~~ee~~|0.77<br>~~ee~~|1.2<br>~~ee~~|V<br>~~ee~~|VGS= 0V,IS= 1.1A<br>~~ee~~|
|**DYNAMIC CHARACTERISTICS(Note 8)**<br>~~ee~~<br>~~el~~|||||||
|Input Capacitance<br>~~———~~|Ciss<br>~~———~~<br>~~ee~~|—<br>~~———~~<br>~~ee~~|401<br>~~———~~|—<br>~~———~~<br>~~el~~|pF<br>~~———~~<br>~~el~~|VDS= 25V, VGS= 0V<br>f = 1MHz<br>~~———~~|
|Output Capacitance<br>~~———~~|Coss<br>~~———~~<br>~~ee~~|—<br>~~———~~<br>~~ee~~|22<br>~~———~~|—<br>~~———~~<br>~~el~~|||
|Reverse Transfer Capacitance<br>~~———~~|Crss<br>~~———~~<br>~~ee~~|—<br>~~———~~<br>~~ee~~|17<br>~~———~~|—<br>~~———~~<br>~~el~~|||
|Gate Resistance<br>~~———~~|Rg<br>~~———~~<br>~~ee~~|—<br>~~———~~<br>~~ee~~|2.1<br>~~———~~<br>~~a~~|—<br>~~———~~<br>~~el~~<br>~~a~~|Ω<br>~~———~~<br>~~el~~<br>~~a~~|VDS= 0V,VGS= 0V,f = 1MHz<br>~~———~~<br>~~ee~~|
|Total Gate Charge(VGS= 4.5V)<br>~~———~~|Qg<br>~~ee~~<br>~~———~~|—<br>~~ee~~<br>~~———~~|4.1<br>~~———~~<br>~~a~~|—<br>~~el~~<br>~~———~~<br>~~a~~|nC<br>~~el~~<br>~~———~~<br>~~a~~<br>~~a~~|VDS= 50V, ID= 1.6A<br>~~———~~<br>~~ee~~<br>~~ee~~|
|Total Gate Charge(VGS= 10V)<br>~~———~~|Qg<br>~~———~~|—<br>~~———~~|8.3<br>~~———~~<br>~~a~~|—<br>~~———~~<br>~~a~~|||
|Gate-Source Charge<br>~~———~~|Qgs<br>~~———~~|—<br>~~———~~|1.5<br>~~———~~<br>~~a~~|—<br>~~———~~<br>~~a~~|||
|Gate-Drain Charge<br>~~———~~|Qgd<br>~~———~~|—<br>~~———~~|2<br>~~———~~<br>~~a~~<br>~~a~~|—<br>~~———~~<br>~~a~~<br>~~a~~|||
|Turn-On DelayTime<br>~~———~~|tD(on)<br>~~———~~|—<br>~~———~~|6.8<br>~~a~~<br>~~———~~<br>~~a~~|—<br>~~a~~<br>~~———~~<br>~~a~~|ns<br>~~a~~<br>~~———~~<br>~~a~~|VDS= 50V, VGS= 4.5V,<br>RG= 6.8ΩID= 1A<br>~~ee~~<br>~~———~~<br>~~ee~~|
|Turn-On Rise Time<br>~~———~~|tr<br>~~———~~|—<br>~~———~~|8.2<br>~~———~~<br>~~a~~|—<br>~~———~~<br>~~a~~|||
|Turn-Off DelayTime<br>~~———~~|tD(off)<br>~~———~~|—<br>~~———~~|7.9<br>~~———~~<br>~~a~~|—<br>~~———~~<br>~~a~~|||
|Turn-Off Fall Time<br>~~———~~|tf<br>~~———~~|—<br>~~———~~|3.6<br>~~———~~<br>~~a~~|—<br>~~———~~<br>~~a~~|||
|Reverse RecoveryTime<br>~~ee~~|trr<br>~~ee~~|—<br>~~ee~~|17<br>~~a~~<br>~~ee~~|—<br>~~a~~<br>~~ee~~|ns<br>~~a~~<br>~~ee~~|IF= 1.1A, di/dt =100A/μs<br>~~ee~~<br>~~ee~~|
|Reverse RecoveryCharge<br>~~ee~~|Qrr<br>~~ee~~|—<br>~~ee~~|9.8<br>~~ee~~|—<br>~~ee~~|nC<br>~~ee~~||



8. Guaranteed by design. Not subject to production testing. 

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**DMN10H220LVT** 

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**----- Start of picture text -----**<br>
10.0 10<br>VDS = 10V<br>9.0 eee 9 eee aa ae<br>8.0 V GS = 10V V GS = 6.0V 8<br>7.0 ||a V GS = 9.0V {feLEO 7 eeeeee Paaoa<br>6.0 V GS = 8.0V Yo VGS = 5.0V 6 YK<br>5.0 VGS = 4.5V 5 TA = 150°C<br>TA = 125°C<br>4.0 iflu| | 4 ffee<br>3.0 VGS = 4.0V 3 ee) TA = 85°C<br>fF | |<br>TA = 25°C<br>2.0 2<br>TA = -55°C<br>1.0 V GS = 3.5V 1<br>0.0<br>0<br>0 0.5 1 1.5 2 2.5 3 1 2 3 4 5 6 7 8<br>VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 1 Typical Output Characteristic Figure 2 Typical Transfer Characteristics<br>0.4<br>0.35<br>SEGeeeneee A<br>0.3<br>CCEA mf<br>0.25<br>Litt VGS = 4.5V tt tt a<br>0.2 CC ee ee<br>0.15 CEE VGS = 10V TL = EEC ID = 200mA  eee<br>0.1<br>0.05 PP SAE ID = 100mA<br>0 COCR “LEE<br>0 1 2 3 4 5 6 7 8 9 10 2 4 6 8 10 12 14 16 18 20<br>ID, DRAIN-SOURCE CURRENT (A) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 3 Typical On-Resistance vs.  Figure 4 Typical Transfer Characteristic<br>Drain Current and Gate Voltage<br>0.70 3<br>VGS = 4.5V<br>0.60 HH EER<br>2.5<br>0.50 SERRE EEDZe 2 Eaannne VIGSD = 10A  10= V<br>0.40 T A  = 150°C<br>1.5<br>0.30 T A  = 125°C saerete = CT TT ZO.ar VGSID = 5A= 4.5V<br>TA = 85°C 1<br>0.20<br>eet |  CT<br>TA = 25°C 0.5<br>0.10<br>Seer TA = -55°C Paennne<br>0.00 0<br>0 moe 1 2 3 4 5 6 TTT 7 8 9 10 -50 TTT -25 0 25  TTT 50 75 100 125 150<br>ID, DRAIN CURRENT (A) TJ, JUNCTION TEMPERATURE (C)<br>Figure 5 Typical On-Resistance vs.  Figure 6 On-Resistance Variation with Temperature<br>Drain Current and Temperature<br>, DRAIN CURRENT (A)<br>D<br> I<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>DS(ON)<br>, DRAIN-SOURCE<br>DS(ON)<br>R<br>ON-RESISTANCE (NORMALIZED)<br>, DRAIN CURRENT (A)<br>D<br> I<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>DS(ON)<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>DS(ON)<br>**----- End of picture text -----**<br>


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**DMN10H220LVT** 

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**----- Start of picture text -----**<br>
0.5 2.5<br>0.4 2.2<br>0.3 TTA 1.9 OL I D = 1mA<br>VGS = 4.5V<br>0.2 ID = 5A Zoo 1.6 ID = 250µA<br>as SN<br>0.1 VGS  10= V 1.3<br>ID = 10A<br>1<br>0<br>-50 -25 0 25 50 75 100 125 150<br>-50 -25TJ, JUNCTION TEMPERATURE (0 25 50 75 100 C)125 150 Figure 8 Gate Threshold Variation vs. Ambient TemperatureTJ, JUNCTION TEMPERATURE (C)<br>Figure 7 On-Resistance Variation with Temperature<br>10 1000<br>9<br>C iss<br>ee | ====e=S—<br>8<br>7<br>ee || a<br>6<br>5 ee TA = 150°C  | 100 tA<br>— TA = 125°C pt<br>4<br>3 TA = 85°C<br>2 I TA = 25°C ASS C oss<br>TA = -55°C<br>1 yf[| [| SS Crss<br>f = 1MHz<br>0 ws 10 Pee<br>0 0.3 0.6 0.9 1.2 1.5 0 5 10 15 20 25 30 35 40<br>VSD, SOURCE-DRAIN VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 9 Diode Forward Voltage vs. Current Figure 10 Typical Junction Capacitance<br>10 10<br>VIDDS  1.6= = 50VA RLimitedDS(on)<br>Pe NNN Eg EE<br>8<br>1<br>DC<br>P W  = 10s<br>6<br>P W  = 1s<br>0. 1 PW = 100ms<br>4 P W  = 10ms<br>2 0.01 T T J(m ax) A = 25°C  = 150°C PW = 1ms PW = 100µs<br>V GS  = 10V<br>Single Pulse a|<br>DUT on 1 * MRP Board<br>0.001 EE<br>0<br>0 2 4 6 8 10 0.1 1 10 100 1000<br>Qg [, TOTAL GATE CHARGE ] Figure 11 Gate Charge (nC) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 12 SOA, Safe Operation Area<br>, DRAIN CURRENT (A)<br>ID<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(th)<br>V<br>, SOURCE CURRENT (A)<br>IS<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>DS(ON)<br> GATE THRESHOLD VOLTAGE (V)<br>V<br>GS<br>T<br>, JUNCTION CAPACITANCE (pF)<br>C<br>**----- End of picture text -----**<br>


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**DMN10H220LVT** 

**==> picture [386 x 228] intentionally omitted <==**

**----- Start of picture text -----**<br>
1<br>D = 0.9<br>D = 0.7<br>SPELLSby) D = 0.5  CHICTITRANeemeV TTT||<br>D = 0.3 I<br>PM TM aT TTI TTI PTT<br>LATIN<br>0.1<br>D = 0.1<br>BEE TU reemerttUTI TIMth ttLINN UI<br>a a 7<br>Ee)<br>D = 0.05 [ELLE]<br>Ey) [PHILA] OA YE<br>TC TT<br>Le TET PIT PTI PT TTT<br>0.01 LAUT D = 0.02<br>D = 0.01 APSA CTI TAT ATT ETT<br>FO LUE IE ITE<br>D = 0.005<br>ZC<br>2 Rthja(t) = r(t) * Rthja HT)<br>D = Single Pulse R thja  = 109°C/W<br>Duty Cycle, D = t1/ t2<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1, PULSE DURATION TIME (sec)<br>Figure 13 Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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**DMN10H220LVT** 

## **Package Outline Dimensions** 

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. 

**==> picture [364 x 177] intentionally omitted <==**

**----- Start of picture text -----**<br>
TSOT26<br>Dim  Min  Max  Typ<br>D<br>A  —  1.00 —<br>e1 A1  0.01  0.10 —<br>A2  0.84  0.90 —<br>D  —  —  2.90<br>E  —  —  2.80<br>E1 E E1  —  —  1.60<br>b  0.30 0.45 —<br>c L2 c  0.12  0.20 —<br>e  —  —  0.95<br><br>Td) fe L : aaae=EEEE e1  —  —  1.90<br>e 4x1 L  0.30 0.50 —<br>ml 6x b e EES L2  —  —  0.25<br>θ  0°  8°  4°<br>A A2 θ1  4°  12°  —<br>All Dimensions in mm<br>az A1 AEE<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. 

**==> picture [291 x 115] intentionally omitted <==**

**----- Start of picture text -----**<br>
C C<br>Dimensions Value (in mm)<br>Y1 C  0.950<br>X  0.700<br>Y  1.000<br>Y1  3.199<br>Y (6x)<br>\n<br>X (6x)<br>**----- End of picture text -----**<br>


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DMN10H220LVT Document number: DS37958  Rev. 2 - 2 

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**DMN10H220LVT** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending.  Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference.  Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2015, Diodes Incorporated 

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> [Request a quote](https://novapart.co/quote/) — it's free and there's no
> minimum order.