# Power MOSFET, N Channel, 100 V, 6.2 A, 0.155 ohm, SOT-223, Surface Mount

![Product image](https://novapart.co/image/farnell:3943520/)

**URL**: https://novapart.co/products/DMN10H220LE-13/power-mosfet-n-channel-100-v-62-a-0155-ohm-sot-223
**SKU**: DMN10H220LE-13
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.2690
**Stock**: 10+
**Lead Time**: 190 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 14W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOT-223 |
| Drain Source Voltage Vds | 100V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 6.2A |
| Drain Source On State Resistance | 0.155ohm |
| Gate Source Threshold Voltage Max | 1.7V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943520/)

**DMN10H220LE 100V N-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|
||||
|**BVDSS**|**RDS(ON) max**|**ID**<br>**TA = +25°C**|
|100V|220mΩ@VGS= 10V|2.3A|
||250mΩ@VGS= 4.5V|2.1A|



## **Features and Benefits** 

- Low On-Resistance 

- Low Input Capacitance 

- Fast Switching Speed 

- Low Input/Output Leakage 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

## **Description** 

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

- **An Automotive-Compliant Part is Available Under Separate Datasheet (DMN10H220LEQ)** 

## **Mechanical Data** 

## **Applications** 

- DC-DC Converters 

- Power Management Functions 

- Case: SOT223 

- Case Material: Molded Plastic, “Green” Molding Compound; UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity:  Level 1 per J-STD-020 

- Terminals Connections: See Diagram Below 

- Terminals: Finish - Matte Tin Annealed over Copper Leadframe; Solderable per MIL-STD-202, Method 208 

- Weight: 0.112 grams (Approximate) 

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## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information** (Note 4)|(Note 4)|||
|---|---|---|---|
|**Part Number**|**Compliance**|**Case**|**Packaging**|
|DMN10H220LE-13|Standard|SOT223|2,500/Tape & Reel|



- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 

   2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

SOT223 

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YWW<br>10H220<br>**----- End of picture text -----**<br>


= Manufacturer’s Marking 10H220 = Marking Code YWW = Date Code Marking Y or Y= Year (ex: 7 = 2017) | WW = Week (01 to 53) 

1 of 7 **www.diodes.com** 

DMN10H220LE Document number: DS36475  Rev. 4 - 2 

November 2017 © Diodes Incorporated 

**DMN10H220LE** 

**Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|
||||||
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage||VDSS|100|V|
|Gate-Source Voltage||VGSS|20|V|
|Continuous Drain Current (Note 5) VGS= 10V|TA= +25°C<br>TA= +70°C|ID|2.3<br>1.8|A|
||TC= +25°C<br>TC= +70°C|ID|6.2<br>4.9|A|
|Maximum Continuous Body Diode Forward Current (Note 5)||IS|1.5|A|
|Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%)||IDM|8|A|



## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|
||||||
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Total Power Dissipation (Note 5)|TA= +25°C|PD|1.8|W|
||TA= +70°C||1.1||
|Thermal Resistance, Junction to Ambient (Note 5)||RJA|69|°C/W|
|Total Power Dissipation (Note 5)|TC= +25°C|PD|14|W|
|Thermal Resistance, Junction to Case (Note 5)||RJC|8.7|°C/W|
|Operating and Storage Temperature Range||TJ,TSTG|-55 to +150|°C|



**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
|~~OO~~<br>~~(QO~~|||||||
|**Characteristic**<br>~~ID~~|**Symbol**<br>~~ID~~|**Min**<br>~~ID~~<br>~~OO~~|**Typ**<br>~~ID~~<br>~~OO~~|**Max**<br>~~ID~~<br>~~(QO~~|**Unit**<br>~~ID~~<br>~~(QO~~|**Test Condition**<br>~~ID~~<br>~~(QO~~|
|**OFF CHARACTERISTICS(Note 6)**<br>~~OO~~<br>~~(QO~~<br>~~RnDDOO~~|||||||
|Drain-Source Breakdown Voltage<br>~~I~~|BVDSS<br>~~I~~<br>~~Rn~~|100<br>~~I~~<br>~~DD~~|—<br>~~I~~<br>~~DD~~|—<br>~~I~~<br>~~OO~~|V<br>~~I~~|VGS= 0V, ID= 250µA<br>~~I~~|
|Zero Gate Voltage Drain Current|IDSS<br>~~Rn ~~|—<br> ~~DD~~|—<br>~~DD ~~<br>~~(OD~~|1<br> ~~OO~~<br>~~I (~~|µA<br>~~(~~|VDS= 100V, VGS= 0V|
|Gate-Source Leakage<br>~~RD~~|IGSS<br>~~RD~~|—<br>~~RD~~|—<br>~~RD~~<br>~~(OD~~|±100<br>~~RD~~<br>~~I (~~|nA<br>~~RD~~<br>~~(~~|VGS= ±16V, VDS= 0V<br>~~RD~~|
|**ON CHARACTERISTICS(Note 6)**<br>~~(OD I (~~<br>~~RnDDOO~~<br>~~———~~<br>~~————————~~|||||||
|Gate Threshold Voltage<br>~~I~~<br>~~———~~|VGS(TH)<br>~~I~~<br>~~Rn~~<br>~~———~~|1<br>~~I~~<br>~~DD~~<br>~~———~~|1.7<br>~~I~~<br>~~DD~~<br>~~———~~|2.5<br>~~I~~<br>~~OO~~<br>~~———~~|V<br>~~I~~<br>~~————————~~|VDS= VGS, ID= 250µA<br>~~I~~<br>~~————————~~|
|Static Drain-Source On-Resistance<br>~~———~~|RDS(ON)<br>~~Rn ~~<br>~~———~~|—<br> ~~DD~~<br>~~———~~|155<br>~~DD ~~<br>~~———~~|220<br> ~~OO~~<br>~~———~~|mΩ<br>~~————————~~<br>~~(~~|VGS= 10V, ID= 1.6A<br>~~————————~~|
|||—<br>~~———~~|190<br>~~———~~<br>~~(OD~~|250<br>~~———~~<br>~~I (~~||VGS= 4.5V, ID= 1.3A<br>~~————————~~|
|Diode Forward Voltage<br>~~———~~<br>~~RD~~|VSD<br>~~———~~<br>~~RD~~|—<br>~~———~~<br>~~RD~~|0.8<br>~~———~~<br>~~RD~~<br>~~(OD~~|1.5<br>~~———~~<br>~~RD~~<br>~~I (~~|V<br>~~————————~~<br>~~RD~~<br>~~(~~|VGS= 0V, IS= 1.1A<br>~~————————~~<br>~~RD~~|
|**DYNAMIC CHARACTERISTICS(Note 7)**<br>~~(OD I (~~<br>~~eeeeee~~|||||||
|Input Capacitance<br>~~es~~|Ciss<br>~~es~~<br>~~ee~~|—<br>~~es~~<br>~~ee~~|401<br>~~es~~<br>~~ee~~|—<br>~~es~~<br>~~ee~~|pF<br>~~es~~<br>~~ee~~|VDS= 25V, VGS= 0V<br>f = 1.0MHz<br>~~es~~|
|Output Capacitance<br>~~es~~|Coss<br>~~es~~<br>~~ee~~|—<br>~~es~~<br>~~ee~~|22<br>~~es~~<br>~~ee~~|—<br>~~es~~<br>~~ee~~|||
|Reverse Transfer Capacitance<br>~~es~~|Crss<br>~~es~~<br>~~ee~~|—<br>~~es~~<br>~~ee~~|17<br>~~es~~<br>~~ee~~|—<br>~~es~~<br>~~ee~~|||
|Gate Resistance<br>~~———~~|Rg<br>~~ee~~|—<br>~~ee~~|2.1<br>~~ee ~~|—<br> ~~ee ~~<br>~~e~~|Ω<br> ~~ee~~<br>~~eee~~|VDS= 0V, VGS= 0V, f = 1.0MHz<br>~~ee~~|
|Total Gate Charge(VGS= 4.5V)<br>~~———~~|Qg|—|4.1|—<br>~~e~~|nC<br>~~eee~~<br>~~ee~~|VDS= 50V, ID= 1.6A<br>~~ee~~<br>~~ee~~|
|Total Gate Charge(VGS= 10V)<br>~~———~~|Qg|—|8.3|—<br>~~e~~|||
|Gate-Source Charge<br>~~———~~|Qgs|—|1.5|—<br>~~e~~|||
|Gate-Drain Charge<br>~~———~~<br>~~———~~|Qgd|—|2|—<br>~~e~~<br>~~ee~~|||
|Turn-On Delay Time<br>~~———~~<br>~~a———~~|tD(ON)|—|6.8|—<br>~~e~~<br>~~ee~~|ns<br>~~eee~~<br>~~ee~~|VDS= 50V, VGS= 4.5V,<br>RG= 6.8ID= 1.0A<br>~~ee~~<br>~~ee~~|
|Turn-On Rise Time<br>~~———~~<br>~~a———~~|tR|—|8.2|—<br>~~e~~<br>~~ee~~|||
|Turn-Off Delay Time<br>~~a———~~|tD(OFF)|—|7.9|—<br>~~ee~~|||
|Turn-Off Fall Time<br>~~———~~|tF|—|3.6|—<br>~~ee~~|||
|Reverse Recovery Time<br>~~———~~<br>~~ee~~|tRR<br>~~ee~~|—<br>~~ee~~|17<br>~~ee~~|—<br>~~ee~~<br>~~ee~~|ns<br>~~ee~~<br>~~ee~~|IS= 1.1A, di/dt =100A/µs<br>~~ee~~<br>~~ee~~|
|Reverse RecoveryCharge<br>~~———~~<br>~~ee~~|QRR<br>~~ee~~|—<br>~~ee~~|9.8<br>~~ee~~|—<br>~~ee~~<br>~~ee~~|nC<br>~~ee~~<br>~~ee~~||



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**DMN10H220LE** 

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10 10<br>VGS = 10V VDS = 10V<br>9 Se 9 eer aa<br>8 VGS = 8.0V VGS = 5.0V 8<br>7 SanwaKe [A)] T [(] 7 YAeee 74<br>6 Of VGS = 4.5V [N] RE 6 rn A<br>R<br>U<br>5 7 Zar C 5 a T A = 150°C ee<br>4 VGS = 4.0V [IN] A 4<br>R<br>D<br>3 ff , D 3 e/a T A = 125°C T A = 85°C<br>I<br>2 An2 aa 2 || T A = 25°C<br>1 VGS = 3.5V 1<br>Aaa a) a<br>T A = -55°C<br>0 SS 0 DD<br>0 0.5 1 1.5 2 2.5 3 1 2 3 4 5 6 7 8<br>VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 1 Typical Output Characteristic Figure 2 Typical Transfer Characteristics<br>0.4 1<br>ID = 1.3A<br>0.9<br>0.35 TTLLLLLLLL FOP<br>0.8<br>0.3<br>EER eeeeee 0.7 SO<br>0.25 ID = 1.6A<br>titi VGS = 4.5V it tte 0.6 RCE<br>0.2 0.5<br>ff ey | Pe Py Fry yyy<br>VGS = 10V 0.4<br>0.15<br>eee pt tt tt [tty]<br>0.3<br>0.1 are<br>0.2<br>0.05<br>LE EEE ELT 0.1 —_——_—<br>0 0<br>0 TEELEELL 1 2 3 4 5 6 7 8 9 10 2 PEE 4 6 8 10 12 14 16 18 20<br>ID, DRAIN-SOURCE CURRENT (A) VGS, GATE-SOURCE CURRENT (A)<br>Figure 3 Typical On-Resistance vs.  Figure 4 Typical Transfer Characteristic<br>Drain Current and Gate Voltage<br>) 0.70 3<br>[(] E VGS = 10V<br>C<br>0.60 ott 2.5 PT<br>T A = 150°C<br>0.50 VGS  10= V<br>[SISTAN] E co T A = 125°C 2 tt] I D = 2A<br>- [R]<br>[N] O 0.40<br>E eT TA = 85°C | Eee<br>C 1.5<br>R<br>0.30 oor saneeeoe VGS = 4.5V<br>ID = 1A<br>- [SOU][IN] A 0.20 see - FT T  ee A = 25°C 1 aaaZA<br>R at<br>D<br>, [)] N 0.10 T A = -55°C 0.5<br>( [O] eee ae<br>D [S]<br>R<br>0.00 Pr 0 TUTE<br>0 1 2 3 4 5 6 7 8 9 10 -50 -25 0 25 50 75 100 125 150<br>ID, DRAIN CURRENT (A) TJ, JUNCTION TEMPERATURE (C)<br>Figure 5 Typical On-Resistance vs. Figure 6 On-Resistance Variation with Temperature<br>Drain Current and Temperature<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>DS(ON)<br>, DRAIN CURRENT (A)<br>ID<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON)<br>R<br>DS(ON)<br>, DRAIN-SOURCE<br>R<br>ON-RESISTANCE (NORMALIZED)<br>, DRAIN CURRENT (A)<br>D<br> I<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>DS(ON)<br>**----- End of picture text -----**<br>


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0.5 2.5<br>)<br>( [V]<br>0.4 VGS = 4.5V G [E] 2.2<br>ID = 1A<br>O [LTA]<br>V ID = 1mA<br>0.3 1.9<br>VGS  10= V H [OLD] S<br>ore ID = 2A eee<br>0.2 1.6 ID = 250µA<br>T [HRE]<br>T [E]<br>ae G [A] nacelle<br>0.1 , 1.3 oS<br>G [S(th)]<br>V<br>0 1<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (C) T  , JUNCTION TEMPERATURE (C)J <br>Figure 7 On-Resistance Variation with Temperature Figure 8 Gate Threshold Variation vs. Junction Temperature<br>10 1000<br>9 f = 1MHz<br>C iss<br>ee | es<br>8<br>)<br>N [T] [(] [A] 7 Fi T   = 150°CA HT es ee<br>6 rd SIT PF | | | | | | |<br>T   = 125°CA<br>C [URRE] 5 100<br>T   = 25°CA<br>4 TE T   = 85°CA TERRE<br>O [URCE] S 3 — Ait SSS<br>S T   = -55°CA<br>I [,] 2 UP Se Coss<br>1 pf SS Crss<br>0 DT) 10 —fPert<br>0 0.3 0.6 0.9 1.2 1.5 0 5 10 15 20 25 30 35 40<br>V    , SOURCE-DRAIN VOLTAGE (V)SD VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 9 Diode Forward Voltage vs. Current Figure 10 Typical Junction Capacitance<br>10 10<br>R PW =<br>Limited DS(ON) 1µs<br>HT CANNING TANT Te [TTT]<br>8 BTN ALA 2) fl<br>1<br>6<br>PW = 10µs<br>VDS = 50V Raa HE<br>ID  1.6= A Anni PW = 100µs  MANTENPTT<br>4 PW = 1ms  LAN<br>0.1  TJ(Max) = 150 ℃ PW = 10ms<br>2 TSingle Pulse SP = 25 ℃ PW<br>DUT on Infinite<br>Heatsink  LTT DC  1)lt<br>VGS = 10V<br>0 0.01  TEL Wc<br>0 2 4 6 8 10<br>0.1  1  10  100  1000<br>Qg [, TOTAL GATE CHARGE ] Figure 11 Gate Charge (nC) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 12 SOA, Safe Operation Area<br>, JUNCTION CAPACITANCE (pF)<br>C<br>T<br>, GATE-THRESHOLD VOLTAGE (V<br>GS(TH)<br>V<br>, SOURCE CURRENT A<br>IS<br>, DRAIN CURRENT (A)<br>ID<br>, GATE-SOURCE VOLTAGE (V)<br>GS<br>V<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br> GATE THRESHOLD VOLTAGE (V)<br>V<br>GS<br>**----- End of picture text -----**<br>


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© Diodes Incorporated 

Document number: DS36475  Rev. 4 - 2 

**DMN10H220LE** 

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o R A Tr = D ‘<br>1<br>SE D = 0.9 ae<br>D = 0.7<br>FeTT a a ae<br>D = 0.5<br>er ee ee<br>ee D = 0.3 OT TT OEee<br>0.1 I LU =<br>OG D = 0.1 re erred LAM LTE I<br>SA<br>D = 0.05<br>7 [a] EE Ep EE<br>eTUE A<br>D = 0.02 ee | AH ETETPPTET<br>0.01<br>ARH—T sal D = 0.01 UIE E L E E ELAM LTTEtEI EAT<br>D7Ae)EH<br>D = 0.005<br>«rh[PZff | oh EE[TTTotoe=tT EEE TTTEEETTEAH SE HE<br>D = Single Pulse R θJA R(t) = r(t) * R JA (t) = r(t) * R θJA JA<br>Rte ETT RθJA R= 99JA = 99 ℃ /W  癈 /W |<br>Duty Cycle, D = t1 / t2 Duty Cycle, D = t1/ t2<br>0.001<br>0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1, PULSE DURATION TIME (sec)<br>Figure 13 Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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DMN10H220LE Document number: DS36475  Rev. 4 - 2 

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**DMN10H220LE** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**SOT223** 

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D<br>b1 Q<br>C SOT223<br>P ret | ate ——— Dim  Min  Max  Typ<br>A 1.55 1.65 1.60<br>A1 0.010 0.15 0.05<br>b 0.60 0.80 0.70<br>b1 2.90  3.10  3.00<br>E E1 C 0.20  0.30  0.25<br>D 6.45  6.55  6.50<br>Gauge E 3.45  3.55  3.50<br>Plane<br>0.25 E1 6.90  7.10  7.00<br>Seating L e -  -  4.60<br>Plane e1 -  -  2.30<br>wh oo<br>e1 b L 0.85  1.05  0.95<br>Q 0.84  0.94  0.89<br>Eana e e ol aoe f [===] | FY<br>All Dimensions in mm<br>A A1<br>| [al]<br>7°<br>0°-10°<br>7°<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**SOT223** 

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**----- Start of picture text -----**<br>
X1<br>Y1<br>aan<br>C1 Y2<br>Y<br>poo X C<br>**----- End of picture text -----**<br>


|**Dimensions Value**|**Dimensions Value(in mm)**|
|---|---|
|**C**|2.30|
|**C1 **|6.40|
|**X**|1.20|
|**X1**|3.30|
|**Y**|1.60|
|**Y1**|1.60|
|**Y2**|8.00|



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DMN10H220LE Document number: DS36475  Rev. 4 - 2 

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**DMN10H220LE** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A.   Life support devices or systems are devices or systems which: 

1. are intended to implant into the body, or 

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2017, Diodes Incorporated 

**www.diodes.com** 

7 of 7 **www.diodes.com** 

DMN10H220LE Document number: DS36475  Rev. 4 - 2 

November 2017 © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/DMN10H220LE-13/power-mosfet-n-channel-100-v-62-a-0155-ohm-sot-223)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/dmn10h220le-13/mosfet-n-ch-100v-6-2a-sot-223/dp/3943520)
---

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