# Power MOSFET, N Channel, 100 V, 2.9 A, 0.116 ohm, U-DFN2020, Surface Mount

![Product image](https://novapart.co/image/farnell:3680118RL/)

**URL**: https://novapart.co/products/DMN10H170SFDE-7/power-mosfet-n-channel-100-v-29-a-0116-ohm-u
**SKU**: DMN10H170SFDE-7
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.1510
**Stock**: 1000+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 6Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | AEC-Q101 |
| Power Dissipation | 2.03W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | U-DFN2020 |
| Drain Source Voltage Vds | 100V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 2.9A |
| Drain Source On State Resistance | 0.116ohm |
| Gate Source Threshold Voltage Max | 2V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3680118RL/)

**DMN10H170SFDE** fT **100V N-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

|**BVDSS**|**RDS(ON) Max**|**ID Max**<br>**TA = +25°C**|
|---|---|---|
|100V|160mΩ @ VGS= 10V|2.9A|
||200mΩ @ VGS= 4.5V|2.6A|



## **Description** 

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. 

## **Features and Benefits** 

- 0.6mm Profile – Ideal for Low Profile Applications 

- PCB Footprint of 4mm[2] 

- Low On-Resistance 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/** 

## **Mechanical Data** 

- Case: U-DFN2020-6 

- Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

## **Applications** 

- Power Management Functions 

- Battery Operated Systems and Solid-State Relays 

   - Moisture Sensitivity: Level 1 per J-STD-020 

   - Terminals: Finish – NiPdAu over Copper Leadframe. Solderable per MIL-STD-202, Method 208 

   - Weight: 0.0065 grams (Approximate) 

- Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. 

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U-DFN2020-6 (Type E)<br>**----- End of picture text -----**<br>


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Bottom View 

Pin Out 

Equivalent Circuit 

## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|
|---|---|---|---|
|||||
|**Part Number**|**Compliance**|**Case**|**Quantity Per Reel**|
|DMN10H170SFDE-7|Standard|U-DFN2020-6 (TypeE)|3,000|
|DMN10H170SFDE-13|Standard|U-DFN2020-6 (TypeE)|10,000|



- Notes:        1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

1 of 8 **www.diodes.com** 

DMN10H170SFDE Datasheet number: DS35901 Rev. 5 - 2 

April 2020 © Diodes Incorporated 

**DMN10H170SFDE** 

## **Marking Information** 

Site 1: 

7H = Product Type Marking Code **7H** YM = Date Code Marking Y = Year (ex: H = 2020) M = Month (ex: 9 = September) - Date Code Key **Year 2012 … 2020 2021 2022 2023 2024 2025 2026 2027 2028 2029** ~~ee~~ **Code** Z … H I J K L M N O P R **Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec** ~~e~~ **Code** 1 2 3 4 5 6 7 8 9 O N D ~~— ee ee ee~~ ~~**e** e ee~~ ~~**e** e ee e~~ Site 2: 7H = Product Type Marking Code YWX = Date Code Marking **7H** Y = Year (ex: H = 2020) W = Week (ex: a = Week 27; z Represents Week 52 and 53) X = Internal Code (ex: U = Monday) _ Date Code Key 

|Code KeyKeyey<br>**Year**<br>**2012**<br>**…**<br>**2020**<br>**2021**<br>**2022**<br>**2023**<br>**2024**<br>**2025**<br>**2026**<br>**2027**<br>**2028**<br>**2029**<br>**Code**<br>2<br>…<br>0<br>1<br>2<br>3<br>4<br>5<br>6<br>7<br>8<br>9<br>~~ee~~<br>~~ee ee ee ee ee~~|
|---|
|**Week**<br>**1-26**<br>**27-52**<br>**53**<br>**Code**<br>A-Z<br>a-z<br>z<br>**Internal Code**<br>**Sun**<br>**Mon**<br>**Tue**<br>**Wed**<br>**Thu**<br>**Fri**<br>**Sat**<br>**Code**<br>T<br>U<br>V<br>W<br>X<br>Y<br>Z<br>~~ee~~<br>~~ee~~<br>~~ee~~|



2 of 8 **www.diodes.com** 

DMN10H170SFDE Datasheet number: DS35901 Rev. 5 - 2 

April 2020 © Diodes Incorporated 

**DMN10H170SFDE** 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|
|||||||
|**Characteristic**|||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage|||VDSS|100|V|
|Gate-Source Voltage|||VGSS|±20|V|
|Continuous Drain Current (Note 6) VGS= 10V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|2.9<br>2.3|A|
||t<10s|TA= +25°C<br>TA= +70°C|ID|3.4<br>2.7|A|
|Pulsed Drain Current(10µs Pulse,DutyCycle = 1%)|||IDM|10|A|
|Maximum BodyDiode Continuous Current|||IS|2.5|A|
|Avalanche Current(Note 7)|||IAS|4.7|A|
|Avalanche Energy (Note 7)|||EAS|16|mJ|



## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Total Power Dissipation (Note 5)|TA= +25°C|PD|0.66|W|
||TA= +70°C||0.42||
|Thermal Resistance, Junction to Ambient (Note 5)|SteadyState|RJA|189|°C/W|
||t<10s||132||
|Total Power Dissipation (Note 6)|TA= +25°C|PD|2.03|W|
||TA= +70°C||1.31||
|Thermal Resistance, Junction to Ambient (Note 6)|Steady State|RJA|61|°C/W|
||t<10s||43||
|Thermal Resistance,Junction to Case(Note 6)||RJC|9.3||
|Operatingand Storage Temperature Range||TJ, TSTG|-55 to +150|°C|



## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**|**Symbol**|**Min**|**Typ **|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS(Note 8) **|||||||
|Drain-Source Breakdown Voltage<br>~~ee~~|BVDSS<br>~~ee~~|100<br>~~ee~~|—<br>~~ee~~|—<br>~~ee~~|V<br>~~ee~~|VGS= 0V,ID= 250μA<br>~~ee~~|
|Zero Gate Voltage Drain Current TJ= +25°C<br>~~ee~~|IDSS<br>~~ee~~|—<br>~~ee~~|—<br>~~ee~~|1<br>~~ee~~|µA<br>~~ee~~|VDS= 100V,VGS= 0V<br>~~ee~~|
|Gate-Source Leakage<br>~~ee~~|IGSS<br>~~ee~~|—<br>~~ee~~|—<br>~~ee~~|±100<br>~~ee~~|nA<br>~~ee~~|VGS= ±20V,VDS= 0V<br>~~ee~~|
|**ON CHARACTERISTICS(Note 8) **|||||||
|Gate Threshold Voltage<br>~~a~~|VGS(TH)<br>~~a~~|1.0<br>~~a~~|2.0<br>~~a~~|3.0<br>~~a~~|V<br>~~a~~|VDS= VGS,ID= 250μA<br>~~a~~|
|Static Drain-Source On-Resistance<br>~~a~~|RDS(ON)<br>~~a~~|—<br>~~a~~|116<br>~~a~~|160<br>~~a~~|mΩ<br>~~a~~|VGS= 10V,ID= 5.0A<br>~~a~~|
||||126<br>~~a~~|200<br>~~a~~||VGS= 4.5V,ID=5.0A<br>~~a~~|
|Diode Forward Voltage<br>~~a~~|VSD<br>~~a~~|—<br>~~a~~|0.9<br>~~a~~|1.0<br>~~a~~|V<br>~~a~~|VGS= 0V,IS= 10A<br>~~a~~|
|**DYNAMIC CHARACTERISTICS(Note 9)**<br>~~i~~|||||||
|Input Capacitance<br>~~i~~|Ciss<br>~~i~~|—<br>~~i~~|1167<br>~~i~~|—<br>~~i~~|pF<br>~~i~~|VDS= 25V, VGS= 0V,<br>f = 1.0MHz<br>~~i~~|
|Output Capacitance<br>~~i~~|Coss<br>~~i~~|—<br>~~i~~|36<br>~~i~~|—<br>~~i~~|pF<br>~~i~~||
|Reverse Transfer Capacitance<br>~~i~~|Crss<br>~~i~~|—<br>~~i~~|25<br>~~i~~|—<br>~~i~~|pF<br>~~i~~||
|Gate Resistance|Rg|—|1.3|—|Ω|VDS= 0V,VGS= 0V,f = 1MHz|
|Total Gate Charge(VGS= 4.5V)|Qg|—|4.9|—|nC|VDS= 80V, ID= 12.8A|
|Total Gate Charge(VGS= 10V)|Qg|—|9.7|—|nC||
|Gate-Source Charge|Qgs|—|2.0|—|nC||
|Gate-Drain Charge|Qgd|—|2.0|—|nC||
|Turn-On DelayTime|tD(ON)|—|10.5|—|ns|VDS= 50V, ID= 12.8A<br>VGS= 10V, RG= 25Ω|
|Turn-On Rise Time|tR|—|11.1|—|ns||
|Turn-Off DelayTime|tD(OFF)|—|42.6|—|ns||
|Turn-Off Fall Time|tF|—|12.8|—|ns||
|Reverse RecoveryTime|tRR|—|30.3|—|ns|IF= 12.8A, di/dt = 100A/μs|
|Reverse RecoveryCharge|QRR|—|35.2|—|nC||



- Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 

   6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 

   7. UIS in production with L = 1.43mH, TJ = +25°C. 

   8. Short duration pulse test used to minimize self-heating effect. 

   9. Guaranteed by design. Not subject to product testing. 

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DMN10H170SFDE Datasheet number: DS35901 Rev. 5 - 2 

April 2020 © Diodes Incorporated 

**DMN10H170SFDE** 

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10 10<br>V     = 5.0V DS<br>8 8<br>6 eya7 Aen 6 eeee T   = 150°CA |||e<br>4 4<br>T   = 125°CA<br>T   = 85°CA<br>2 2<br>> Ae I<br>T   = 25°CA<br>LI<br>T   = -55°CA<br>0 0<br>0 0.5 1.0 1.5 2.0 1 2 3 4 5<br>VDS, DRAIN-SOURCE VOLTAGE (V) V    , GATE-SOURCE VOLTAGE (V) GS<br>Fig.1 Typical Output Characteristic Fig. 2 Typical Transfer Characteristics<br>0.20 0.40<br>0.18 0.35 V     = 4.5VGS<br>0.16 VGS = 1.8V<br>0.30<br>0.14<br>» VGS = 2.5V ——— T   = 150°CA<br>0.25<br>0.12<br>Cer a T   = 125°CA<br>0.10 VGS = 4.5V 0.20<br>0.08 a“Tt ft 0.15 oy—— T   = 85°CA<br>0.06<br>i 0.10 eee T   = 25°C A<br>0.04<br>0.02 SHH 0.05 EEE T   =  A -55°C<br>0 CCC 0 tt<br>1 2 3 4 5 6 7 8 9 10 0 2 4 6 1 8 10<br>ID, DRAIN-SOURCE CURRENT (A) I  , DRAIN CURRENT (AD ）<br>Fig. 3 Typical On-Resistance vs.  Fig. 4 Typical On-Resistance vs.<br>Drain Current and Gate Voltage  Drain Current and Temperature<br>2.8 0.30<br>2.6 Pf | | tt<br>VGS  10= V<br>2.4 VGS  10= V 0.25 I D = 10A<br>2.2 I D = 10A<br>2.0 0.20<br>1.8 oaeeeee VGS = 5V in VIGSD = 5A  5= V<br>1.6 I D = 5A 0.15<br>1.4 Eanes<br>1.2 0.10<br>aay ar@c mn eeeaoreee<br>1.0<br>0.8 0.05<br>0.6 pare<br>0.4 ATT 0 EE<br>50 -25 0 25 50 75 100 125 150 - 50 -25 0 25 ET 50 75 EEE 100 125 150<br>TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C)<br>Fig. 5 On-Resistance Variation with Temperature Fig. 6 On-Resistance Variation with Temperature<br>, DRAIN CURRENT (A)<br>ID<br>)<br><br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>DS(ON)<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>, DRAIN CURRENT (A)<br>D<br> I<br>, DRAIN-SOURCE<br>DS(ON)<br>R<br>ON-RESISTANCE (NORMALIZED)<br>DS(ON)<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>**----- End of picture text -----**<br>


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DMN10H170SFDE Datasheet number: DS35901 Rev. 5 - 2 

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© Diodes Incorporated 

**DMN10H170SFDE** 

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3.0<br>2.5<br>SRE<br>2.0 PP|| IDI D = 2= 2 m 50 μA 礎 ™~SR|<br>1.5<br>1.0<br>ete t tt<br>0.5<br>0<br>-50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (C)<br>Fig. 7 Gate Threshold Variation vs. Ambient TemperatureJunction Temperature<br>10,000 eee<br>neaSs GO |<br>O —_——_———————— Ciss<br>a |<br>==<br>wo | | | | | ft<br>See Coss |<br>C—O<br>=<br>Crss<br>SSS<br>yp<br>f = 1MHz |<br>ESAS<br>Let | | | tf | ft<br>0 10 20 30 40<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 9 Typical Junction Capacitance<br>100<br>RDS(on)<br>Limited<br>a<br>10 ee|<br>BANNING ELT FF<br>1<br>| RA DC INTIN INty<br>LUTTIN<br>—— P W  = 10s SEN TAN TE TINGPR eT<br>0.1 IAAaulEl<br>PW = 1s<br>re PW = 100ms TT NININMAG EE<br>0.01 T J(m ax)  = 150°C PW = 10ms PNAEl<br>TA = 25°C PW = 1ms<br>VGS = 10V TTT ,<br>Single Pulse P W  = 100µs<br>0.001 DUT on 1 * MRP Board Serell 1aieee<br>0.1 1 10 100 1000<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 11 SOA, Safe Operation Area<br>, JUNCTION CAPACITANCE (pF)<br>C<br>T<br>, GATE THRESHOLD VOLTAGE (V)<br>V<br>GS(th)<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


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10<br>9<br>8 ee<br>7<br>eeee<br>6<br>5 T  = 25°C A<br>4<br>3<br>BER<br>2<br>1<br>0<br>0 0.2 0.4 0.6 0.8 1.0 1.2<br>V    , SOURCE-DRAIN VOLTAGE (V)SD<br>Fig. 8 Diode Forward Voltage vs. Current<br>10<br>a WA<br>8 ae<br>| | V     = 80VDS Of<br>I   =        AD [    12.8]<br>6<br>oe, 4<br>Jo<br>4 ae<br>a<br>Pf | ff<br>ae<br>2<br>0 i<br>0 2 4 6 8 10<br>Q                                           (nC)g [, TOTAL GATE CHARGE]<br>Fig. 10 Gate Charge<br>, SOURCE CURRENT (A)<br>IS<br>GATE-SOURCE VOLTAGE (V)<br>GS,<br>V<br>**----- End of picture text -----**<br>


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DMN10H170SFDE Datasheet number: DS35901 Rev. 5 - 2 

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**DMN10H170SFDE** 

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1 ael ee ee ee nS Ce ne——— =oe<br>D = 0.7<br>SesserBEER D = 0.5 EE EHee ta eet e a —ent<br>HH D = 0.3 meee HHI HE HE<br>0.1 CCTra D = 0.1 ace nC”Nieat D = 0.9<br>SS<br>D = 0.05<br>bo Cee<br>He ta<br>D = 0.02<br>Tee TTT TTT<br>0.01<br>a D = 0.01 e esc ees)AllAe erect ees enti ee es<br>HE D = 0.005 RJA(t) = r(t) * RJA<br>Tea aA RJA =  61 °C癈 /W CooTTT<br>Duty Cycle, D = t1/ t2<br>Single Pulse<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000<br>t1, PULSE DURATION TIME (sec)t1, PULSE DURATION TIMES (sec)<br>Figure Fig. 11 Transient Thermal Resistance 12<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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DMN10H170SFDE Datasheet number: DS35901 Rev. 5 - 2 

April 2020 © Diodes Incorporated 

**DMN10H170SFDE** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **U-DFN2020-6 (Type E)** 

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A3<br>A A1 U-DFN2020-6<br>Type E<br>Dim  Min  Max  Typ<br>A  0.57  0.63 0.60<br>D A1  0 0.05 0.03<br>A3  —  —  0.15<br>— ———— b  0.25 0.35 0.30<br>b1  0.185 0.285 0.235<br>D  1.95 2.05 2.00<br>b1 K1 D2  0.85 1.05 0.95<br>D2 E  1.95 2.05 2.00<br>E2  1.40 1.60 1.50<br>E E2 L 1  e  —  —  0.65<br>L(2X) L  0.25 0.35 0.30<br>L1  0.82  0.92  0.87<br>K2<br>K1  —  —  0.305<br>K2  —  —  0.225<br>Z  —  —  0.20<br>Z(4X) e b(6X) All Dimensions in mm<br>—- HE Jtt a<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **U-DFN2020-6 (Type E)** 

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i X2<br>Y3 Y2 Y1<br>X1<br>X (6x) EY) C Y (2x)<br>**----- End of picture text -----**<br>


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Value<br>Dimensions<br>(in mm)<br>C  0.650<br>X  0.400<br>X1  0.285<br>—<br>X2  1.050<br>Y  0.500<br>Y1  0.920<br>Y2  1.600<br>Y3 2.300<br>**----- End of picture text -----**<br>


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DMN10H170SFDE Datasheet number: DS35901 Rev. 5 - 2 

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**DMN10H170SFDE** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

- B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2020, Diodes Incorporated 

**www.diodes.com** 

8 of 8 **www.diodes.com** 

DMN10H170SFDE Datasheet number: DS35901 Rev. 5 - 2 

April 2020 © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/DMN10H170SFDE-7/power-mosfet-n-channel-100-v-29-a-0116-ohm-u)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/dmn10h170sfde-7/mosfet-n-ch-100v-2-9a-u-dfn2020/dp/3680118RL)
---

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