# Power MOSFET, N Channel, 100 V, 17 A, 0.067 ohm, TO-252 (DPAK), Surface Mount

![Product image](https://novapart.co/image/farnell:3943510/)

**URL**: https://novapart.co/products/DMN10H099SK3-13/power-mosfet-n-channel-100-v-17-a-0067-ohm-to-252
**SKU**: DMN10H099SK3-13
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.2000
**Stock**: 1000+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 34W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-252 (DPAK) |
| Drain Source Voltage Vds | 100V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 17A |
| Drain Source On State Resistance | 0.067ohm |
| Gate Source Threshold Voltage Max | 2V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943510/)

**DMN10H099SK3** 

**100V N-CHANNEL ENHANCEMENT MODE MOSFET** 

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## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|
||||
|**V(BR)DSS**|**RDS(on) max**|**ID**<br>**TC = +25°C**|
|100V|80mΩ@VGS= 10V|17A|
||99mΩ@VGS= 6V|15A|



## **Features** 

- Low RDS(ON) – ensures on state losses are minimized 

- Small form factor thermally efficient package enables higher density end products 

- **Lead-Free Finish; RoHS compliant (Note 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

## **Description** 

This new generation complementary MOSFET features low on-resistance and fast switching, making it ideal for high efficiency power management applications. 

## **Applications** 

- Power Management Functions 

- DC-DC Converters 

## **Mechanical Data** 

- Case: TO252 (DPAK) 

- Case Material: Molded Plastic, “Green” Molding Compound UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminal Connections: See Diagram 

- Terminals: Finish – Matte Tin annealed over Copper leadframe Solderable per MIL-STD-202, Method 208 

- Weight: 0.33 grams (approximate) 

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D<br>TO252<br>D<br>G S<br>Top View  Top View<br>**----- End of picture text -----**<br>


Internal Schematic 

## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information** (Note 4)|||
|---|---|---|
|**Part Number**|**Case**|**Packaging**|
|DMN10H099SK3-13|TO252|2,500/Tape&Reel|



- Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 

   2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. 

## **Marking Information** 

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N099SK<br>YYWW<br>**----- End of picture text -----**<br>


=Manufacturer’s Marking N099SK = Product Type Marking Code YYWW = Date Code Marking YY = Last Digit of Year (ex: 14 = 2014) WW = Week Code (01 to 53) 

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DMN10H099SK3 Document number: DS37263  Rev. 2 - 2 

July 2014 © Diodes Incorporated 

**DMN10H099SK3** 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|
||||||
|**Characteristic**||**Symbol**|**Value**|**Units**|
|Drain-Source Voltage||VDSS|100|V|
|Gate-Source Voltage||VGSS|±20|V|
|Continuous Drain Current (Note 5) VGS= 10V|TC= +25°C<br>TC= +70°C|ID|17<br>13|A|
|Pulsed Drain Current (10μs pulse, duty cycle = 1%)||IDM|20|A|
|Avalanche Current, L = 1mH||IAS|7.5|A|
|Avalanche Energy, L = 1mH||EAS|28.5|mJ|



## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|
||||||
|**Characteristic**||**Symbol**|**Value**|**Units**|
|Total Power Dissipation (Note 5)|TC= +25°C|PD|34|W|
||TC= +70°C||22||
|Thermal Resistance, Junction to Ambient (Note 5)||RθJA|51|°C/W|
|Thermal Resistance, Junction to Case (Note 5)||RθJC|3.6||
|Operating and Storage Temperature Range||TJ, TSTG|-55 to +150|°C|



## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS(Note 7)**<br>~~eee~~|||||||
|Drain-Source Breakdown Voltage<br>~~eee~~|BVDSS<br>~~eee~~|100<br>~~eee~~|<br>~~eee~~|<br>~~eee~~|V<br>~~eee~~|VGS= 0V, ID= 250µA<br>~~eee~~|
|Zero Gate Voltage Drain Current<br>~~eee~~|IDSS<br>~~eee~~|<br>~~eee~~|<br>~~eee~~|1<br>~~eee~~|µA<br>~~eee~~|VDS= 80V, VGS= 0V<br>~~eee~~|
|Gate-Source Leakage<br>~~Pe~~|IGSS<br>~~Pe~~|<br>~~Pe~~|<br>~~Pe~~|±100<br>~~Pe~~|nA<br>~~Pe~~|VGS= ±20V, VDS= 0V<br>~~Pe~~|
|**ON CHARACTERISTICS(Note 7)**<br>~~DIOO~~<br>~~(I~~|||||||
|Gate Threshold Voltage<br>~~nn~~|VGS(th)<br>~~nn~~<br>~~DI~~|1.5<br>~~nn~~<br>~~DI~~|2<br>~~nn~~<br>~~DI~~|3<br>~~nn~~<br>~~OO~~|V<br>~~nn~~<br>~~(I~~|VDS= VGS, ID= 250µA<br>~~nn~~|
|Static Drain-Source On-Resistance<br>~~a~~|RDS (ON)<br>~~DI~~<br>~~a~~<br>~~(In~~|<br>~~DI~~<br>~~a~~|67<br>~~DI ~~<br>~~a~~|80<br> ~~OO~~<br>~~a~~|mΩ<br>~~(I~~<br>~~a~~<br>~~(OO~~|VGS= 10V, ID= 3.3A<br>~~a~~|
|||<br>~~a~~<br>~~IN~~|69<br>~~a~~<br>~~I~~|99<br>~~a~~<br>~~(OO~~||VGS= 6V, ID= 3A<br>~~a~~|
|Diode Forward Voltage<br>~~I~~|VSD<br>~~I~~<br>~~(In~~|<br>~~I~~<br>~~IN~~|0.77<br>~~I~~<br>~~I~~|<br>~~I~~<br>~~(OO~~|V<br>~~I~~<br>~~(OO~~|VGS= 0V, IS= 3.2A<br>~~I~~|
|**DYNAMIC CHARACTERISTICS(Note 6)**<br>~~(In IN I~~<br>~~(OO~~<br>~~e~~|||||||
|Input Capacitance<br>~~nn~~<br>~~e~~|Ciss<br>~~nn~~<br>~~e~~<br>~~e~~|<br>~~nn~~<br>~~e~~~~**e**~~<br>~~e~~|1172<br>~~nn~~<br>~~**e**~~|<br>~~nn~~<br>~~**e**~~|pF<br>~~**e**~~|VDS= 50V, VGS= 0V, f = 1MHz<br>~~**e**~~|
|Output Capacitance<br>~~e~~|Coss<br>~~e~~<br>~~e~~|<br>~~e~~~~**e**~~<br>~~e~~|40.8<br>~~**e**~~|<br>~~**e**~~|||
|Reverse Transfer Capacitance<br>~~e~~|Crss<br>~~e~~<br>~~e~~|<br>~~e~~~~**e**~~<br>~~e~~|31.3<br>~~**e**~~|<br>~~**e**~~|||
|Gate Resistance<br>~~e~~|RG<br>~~e~~<br>~~e~~<br>~~I~~|<br>~~e~~~~**e**~~<br>~~e~~<br>~~I~~|1.6<br>~~**e**~~<br>~~i~~|<br>~~**e**~~<br>~~i~~|Ω<br>~~**e**~~<br>~~i~~|VDS= 0V, VGS= 0V, f = 1MHz<br>~~**e**~~<br>~~ee~~|
|Total Gate Charge(VGS= 10V)<br>~~nD~~<br>~~————~~|Qg<br>~~e~~<br>~~nD~~<br>~~I~~<br>~~————~~|<br>~~e~~<br>~~nD~~<br>~~I~~<br>~~————~~|25.2<br>~~nD~~<br>~~————~~<br>~~i~~|<br>~~nD~~<br>~~————~~<br>~~i~~|nC<br>~~————~~<br>~~i~~<br>~~eee~~|VDS= 50V, ID= 3.3A<br>~~————~~<br>~~ee~~<br>~~eee~~|
|Total Gate Charge(VGS= 4.5V)<br>~~————~~|Qg<br>~~I~~<br>~~————~~|<br>~~I~~<br>~~————~~|12.2<br>~~————~~<br>~~i~~|<br>~~————~~<br>~~i~~|||
|Gate-Source Charge<br>~~————~~|Qgs<br>~~————~~|<br>~~————~~|5.3<br>~~————~~<br>~~i~~|<br>~~————~~<br>~~i~~|||
|Gate-Drain Charge<br>~~————~~<br>~~———~~|Qgd<br>~~————~~<br>~~I~~|<br>~~————~~|5.9<br>~~————~~<br>~~i~~|<br>~~————~~<br>~~i~~<br>~~eee~~|||
|Turn-On Delay Time<br>~~a~~<br>~~———~~|tD(on)<br>~~a~~<br>~~I~~|<br>~~a~~|5.4<br>~~i~~<br>~~a~~|<br>~~i~~<br>~~a~~<br>~~eee~~|ns<br>~~i~~<br>~~eee~~|VDD= 50V, RG= 6.0Ω, ID= 3.3A<br>~~ee~~<br>~~eee~~|
|Turn-On Rise Time<br>~~DD~~<br>~~———~~|tr<br>~~I~~<br>~~DD~~|<br>~~DD~~|5.9<br>~~DD~~|<br>~~DD~~<br>~~eee~~|||
|Turn-Off Delay Time<br>~~———~~|tD(off)||20|<br>~~eee~~|||
|Turn-Off Fall Time<br>~~———~~<br>~~S$A]~~|tf<br>~~A]~~|<br>~~A]~~|7.3|<br>~~eee~~|||
|Body Diode Reverse Recovery Time<br>~~———~~<br>~~S$A]~~|trr<br>~~A]~~|<br>~~A]~~|19.7|<br>~~eee~~|ns<br>~~eee~~|IF= 3.3A, dI/dt = 100A/μs<br>~~eee~~|
|Body Diode Reverse Recovery Charge<br>~~———~~<br>~~S$A]~~|Qrr<br>~~A]~~|<br>~~A]~~|15.9|<br>~~eee~~|nC<br>~~eee~~||



- Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 6. Guaranteed by design. Not subject to product testing. 

   7. Short duration pulse test used to minimize self-heating effect. 

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**DMN10H099SK3** 

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20.0 10<br>VGS = 10V VDS = 10V<br>VGS = 5.0V 9<br>16.0 VGS = 6.0V 8<br>VGS = 4.5V 7<br>12.0 f o.o 6 HI<br>5<br>8.0 pe 4 HT<br>TA = 150°C<br>3<br>4.0 V GS = 4.0V 2 TA = 125°C<br>foo TA = 85°C TA = 25°C<br>VGS = 3.5V 1 TA = -55°C<br>0.0 0 7)<br>0 1 2 3 4 5 1 2 3 4 5<br>VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 1 Typical Output Characteristics Figure 2 Typical Transfer Characteristics<br>0.1 0.5<br>ID = 3.0A<br>0.08 BRR RRRRaa 0.4 RELL ID = 3.3A<br>VGS = 6.0V<br>0.06 0.3<br>eee) TT<br>VGS = 10V<br>0.040.020 AtoEEE PEELE EEL 0.20.10 LETTEEeRe<br>0 2 4 6 8 10 12 14 16 18 20 2 4 6 8 10 12 14 16 18 20<br>ID, DRAIN-SOURCE CURRENT (A) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 3 Typical On-Resistance vs.  Figure 4 Typical Transfer Characteristics<br>Drain Current and Gate Voltage<br>0.16 3<br>VGS = 10V<br>0.14 TA = 150°C 2.5<br>0.12 iaaneneee T A  = 125°C SERRE<br>2 VGS  5= V<br>0.10 ID = 1A<br>TA = 85°C<br>0.08 aePEPE 1.5 eeBERR.<br>0.06 T A  = 25°C<br>1<br>SERRE RReEn tee<br>0.04<br>TA = -55°C<br>0.5<br>0.02 BSS ere<br>0.00 0 PEELE 1 2 3 4 5 6 7 8 9 10 0-50 PEE -25 0 25 50 EET 75 100 125 TL 150<br>ID, DRAIN CURRENT (A) TJ, JUNCTION TEMPERATURE (C)<br>Figure 5 Typical On-Resistance vs.  Figure 6 On-Resistance Variation with Temperature<br>Drain Current and Temperature<br>, DRAIN CURRENT (A) , DRAIN CURRENT (A)<br>D D<br> I  I<br>) )<br>, DRAIN-SOURCE ON-RESISTANCE ( , DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON) DS(ON)<br>R R<br>)<br>, DRAIN-SOURCE<br>DS(ON)<br>R<br>, DRAIN-SOURCE ON-RESISTANCE ( ON-RESISTANCE (NORMALIZED)<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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**DMN10H099SK3** 

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0.15 2.5<br>0.12 2.2<br>TTT VIGSD = 1A  5= V =  EET ID = 1mA<br>0.09 1.9<br>BERR ae Pee ID = 250µA<br>0.06 1.6<br>TET) =  ESRD<br>0.03 1.3<br>0 1<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C)<br>Figure 7 On-Resistance Variation with Temperature Figure 8 Gate Threshold Variation vs. Ambient Temperature<br>10 10000<br>9 f = 1MHz<br>ee | ===== =<br>8 es | ———<br>Ciss<br>7 ees |i 1000 SS<br>6<br>oe eeoa<br>5<br>TA = 150°C<br>NIE ee<br>4<br>100<br>3 T A = 125°C Coss<br>TA = 25°C<br>I Set<br>2 TA = 85°C (i f{— == C rss —<br>10 aT T A = -55°C 10 TEE Prere<br>0 0.3 0.6 0.9 1.2 1.5 0 5 10 15 20 25 30 35 40<br>VSD, SOURCE-DRAIN VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 9 Diode Forward Voltage vs. Current Figure 10 Typical Junction Capacitance<br>10 100<br>RDS(on)<br>Limited P W  = 1µs<br>8<br>10<br>VIDDS  3.3= = 50VA PW =P 1s W  = 100ms<br>6<br>P W = 10ms<br>1 PW = 1ms<br>PW = 100µs<br>4<br>P W  = 10µs<br>2 AT Td 0.1 TTJA( = 25max) ° =C 150°C iiiimmeami<br>V GS  = 10V<br>Single Pulse<br>DUT on 1 * MRP Board<br>0 0.01 ee ll<br>0 5 10 15 20 25 1 10 100<br>Qg [, TOTAL GATE CHARGE ] (nC) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 11 Gate Charge Figure 12 SOA, Safe Operation Area<br>)<br>, GATE THRESHOLD VOLTAGE (V)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>GS(th)<br>DS(ON) V<br>R<br>, SOURCE CURRENT (A)<br>IS , JUNCTION CAPACITANCE (pF)<br>T<br>C<br>, DRAIN CURRENT (A)<br>ID<br> GATE THRESHOLD VOLTAGE (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


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**DMN10H099SK3** | 

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moLr<br>'n CORPORATE io<br>**----- End of picture text -----**<br>


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1 cee el ae ell al ee TT | | PP eer)<br>SS D = 0.9 SS ESE ae ae<br>D = 0.7<br>eee D = 0.5 eee ea eene<br>Terr<br>| D = 0.3 a cecl<br>Eo TIE TT IIT) TTP PITT TTT<br>0.1 TT ae AI EI LUI EIU<br>D = 0.1<br>EEA HEE EH<br>CT D = 0.05 vooho<br>7 eT<br>D = 0.02<br>i,<br>S50) ami AMMA TIOMMOGUOMAUOION NOTIN OUI<br>0.01 A D = 0.01 IIT IIl<br>[TAeee<br>och Nee SH re a<br>LALPoA7 D = Single Pulse isTTT D = 0.005 TT R JA (t) = r(t) * R JA LTT<br>2 Se RJA = 3.6°C/W anal<br>Duty Cycle, D = t1/ t2<br>0.001<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10<br>t1, PULSE DURATION TIME (sec)<br>Figure 13 Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


## **Package Outline Dimensions** 

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for latest version. 

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E<br>A<br>b3<br>TO252 (DPAK)<br>_ a Dim Min A  2.19  2.39  Max  2.29 Typ<br>a A1 0.00  0.13  0.08<br>A2 0.97  1.17  1.07<br>.<br>8 : ia b  0.64  0.88 0.783<br>b2  0.76  1.14  0.95<br>ia b3  5.21  5.46  5.33<br>ee c2  0.45  0.58 0.531<br>a D  6.00  6.20  6.10<br>. ︵ ︶ a D1 5.21  -  -<br>can ︵ ︶ e  -  -  2.286<br>. 805.0 a E  6.45  6.70  6.58<br>E1 4.32  -  -<br>G PI i<br>H  9.40 10.41 9.91<br>L  1.40  1.78  1.59<br>1 L3  0.88  1.27  1.08<br>) X8pL, A aee L4  0.64  1.02  0.83<br>a a  0°  10°  -<br>_—— All Dimensions in mm<br>E<br>A<br>b3<br>7°±1°<br>c2<br>L3<br>D<br>A2<br>H<br>L4<br>e b 3x<br>b2 2x<br>GaugePlane<br>E1 D1 SeatingPlane<br>L<br>2.74REF<br>a<br>**----- End of picture text -----**<br>


5 of 6 **www.diodes.com** 

DMN10H099SK3 Document number: DS37263  Rev. 2 - 2 

July 2014 © Diodes Incorporated 

**DMN10H099SK3** 

|NEW PRODUCT<br>NEW PRODUCT<br>||**Suggested Pad Layout**<br>Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.<br>**IMPORTANT NOTICE**<br>DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,<br>INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE<br>**Dimensions**<br>**Value(in mm)**<br>**C**<br>4.572<br>**X**<br>1.060<br>**X1**<br>5.632<br>**Y**<br>2.600<br>**Y1**<br>5.700<br>**Y2**<br>10.700<br>X<br>1<br>X<br>Y<br>2<br>Y<br>1<br>~~Y~~<br>C<br>~~ro~~<br>~~Ld~~<br>~~0~~ ~~0~~<br>~~ee~~|**Suggested Pad Layout**<br>Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.<br>**IMPORTANT NOTICE**<br>DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,<br>INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE<br>**Dimensions**<br>**Value(in mm)**<br>**C**<br>4.572<br>**X**<br>1.060<br>**X1**<br>5.632<br>**Y**<br>2.600<br>**Y1**<br>5.700<br>**Y2**<br>10.700<br>X<br>1<br>X<br>Y<br>2<br>Y<br>1<br>~~Y~~<br>C<br>~~ro~~<br>~~Ld~~<br>~~0~~ ~~0~~<br>~~ee~~|
|---|---|---|
||(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).||
||Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes||
||without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the||
||application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or||
||trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume||
||all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated||
||website, harmless against all damages.||



Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending.  Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference.  Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

A.   Life support devices or systems are devices or systems which: 

1. are intended to implant into the body, or 

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2014, Diodes Incorporated 

**www.diodes.com** 

6 of 6 **www.diodes.com** 

DMN10H099SK3 Document number: DS37263  Rev. 2 - 2 

July 2014 © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/DMN10H099SK3-13/power-mosfet-n-channel-100-v-17-a-0067-ohm-to-252)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/dmn10h099sk3-13/mosfet-n-ch-100v-17a-to-252/dp/3943510)
---

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