# Power MOSFET, N Channel, 8 V, 2.7 A, 0.035 ohm, X1-WLB0808, Surface Mount

![Product image](https://novapart.co/image/farnell:3943508RL/)

**URL**: https://novapart.co/products/DMN1054UCB4-7/power-mosfet-n-channel-8-v-27-a-0035-ohm-x1
**SKU**: DMN1054UCB4-7
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.2040
**Stock**: 10+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 4Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 740mW |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 4.5V |
| Transistor Case Style | X1-WLB0808 |
| Drain Source Voltage Vds | 8V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 2.7A |
| Drain Source On State Resistance | 0.035ohm |
| Gate Source Threshold Voltage Max | 700mV |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943508RL/)

**DMN1054UCB4** 

## **N-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** (Typ. @ VGS = 4.5V, TA = +25°C) 

|**VDSS**|**RDS(ON)**|**Qg**|**Qgd**|**ID**|
|---|---|---|---|---|
|8V|35mΩ|9.6nC|0.9nC|4.0A|



## **Features** 

- Trench-CSP Technology with the Lowest on Resistance: 

- RDS(ON) = 35mΩ to Minimize On-State Losses 

   - Qg = 9.6nC for Ultra-Fast Switching 

- VGS(TH) = 0.6V Typ. for a Low Turn-On Potential 

## **Description** 

The DMN1054UCB4 is a Trench MOSFET, engineered to minimize on-state losses and switch ultra-fast, making it ideal for high-efficiency power transfer. Using Chip-Scale Package (CSP) to increase power density by combining low thermal impedance with minimal RDS(ON) per footprint area. 

## **Applications** 

- CSP with Footprint 0.8mm × 0.8mm 

- Height = 0.375mm for Low Profile 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

## **Mechanical Data** 

   - Case: X1-WLB0808-4 

   - Terminal Connections: See Diagram Below 

- DC-DC Converters 

- Battery Management 

- Load Switch 

X1-WLB0808-4 

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Top-View<br>Pin Configuration<br>**----- End of picture text -----**<br>


Equivalent Circuit 

## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information** (Note 4)|||
|---|---|---|
|**Part Number**|**Case**|**Packaging**|
|DMN1054UCB4-7|X1-WLB0808-4|3000/Tape & Reel|



- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 

   2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. 

## **Marking Information** 

YW = Product Type Marking Code YM = Date Code Marking Y or Y ~~_~~ = Year (ex: D = 2016) M or M = Month (ex: 9 = September) 

Date Code Key 

|Date Code Keyy|||||||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|**Year**|**2012**||||**2013**|||**2014**|||**2015**||||**2016**|||**2017**|||**2018**||
|**Code**|Z||||A|||B|||C||||D|||E||||F|
||||||||||||||||||||||||
|**Month**|**Jan**||**Feb**||**Mar**|**Apr**||**May**||**Jun**|||**Jul**||**Aug**|**Sep**||**Oct**||**Nov**||**Dec**|
|**Code**|1||2||3||4|5||6|||7||8|9|9|O||N||D|



1 of 7 **www.diodes.com** 

DMN1054UCB4 Document number: DS37579  Rev. 5 - 2 

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**DMN1054UCB4** 

**Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

||||||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage||VDSS|8|V|
|Gate-Source Voltage||VGSS|±5|V|
|Continuous Source Current @ VGS= 4.5V (Note 5)|TA= +25°C<br>TA= +70°C|ID|2.7<br>2.2|A|
|Continuous Source Current @ VGS= 4.5V (Note 6)|TA= +25°C<br>TA= +70°C|ID|4.0<br>3.2|A|
|Pulsed Drain Current(Pulse duration 10µs,dutycycle ≤1%)||IDM|8|A|
|Continuous Source-Drain Diode Current||IS|0.74|A|
|Pulse Diode Forward Current||ISM|15|A|



## **Thermal Characteristics** 

|**Thermal Characteristics**||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Total Power Dissipation(Note 5)|PD|0.74|W|
|Thermal Resistance,Junction to Ambient(Note 5)|RθJA|169|°C/W|
|Total Power Dissipation(Note 6)|PD|1.34|W|
|Thermal Resistance,Junction to Ambient(Note 6)|RθJA|93|°C/W|
|Operatingand Storage Temperature Range|TJ,TSTG|-55 to +150|°C|



. 

**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**<br>~~ee~~|**Symbol**<br>~~ee~~|**Min**<br>~~ee~~|**Typ**<br>~~ee~~|**Max**<br>~~ee~~|**Unit**<br>~~ee~~|**Test Condition**<br>~~ee~~|
|**OFF CHARACTERISTICS(Note 7)**<br>~~ee~~|||||||
|Drain-Source Breakdown Voltage<br>~~ee~~|BVDSS<br>~~ee~~|8<br>~~ee~~|—<br>~~ee~~|—<br>~~ee~~|V<br>~~ee~~|VGS= 0V,ID= 250µA<br>~~ee~~|
|Zero Gate Voltage Drain Current<br>~~ee~~<br>~~ee~~|IDSS<br>~~ee~~<br>~~ee~~|—<br>~~ee~~<br>~~ee~~|—<br>~~ee~~<br>~~ee~~|1.0<br>~~ee~~<br>~~ee~~|µA<br>~~ee~~|VDS= 8V,VGS= 0V<br>~~ee~~|
|Gate-BodyLeakage<br>~~ee~~<br>~~ee~~|IGSS<br>~~ee~~<br>~~ee~~|—<br>~~ee~~<br>~~ee~~|—<br>~~ee~~<br>~~ee~~|±100<br>~~ee~~<br>~~ee~~|nA<br>~~ee~~|VGS= ±5V,VDS= 0V<br>~~ee~~|
|**ON CHARACTERISTICS(Note 7)**<br>~~ee~~|||||||
|Gate Threshold Voltage<br>~~ee~~|VGS(TH)<br>~~ee~~|0.35<br>~~ee~~|—<br>~~ee~~|0.7<br>~~ee~~|V|VDS= VGS,ID= 250μA|
|Static Drain-Source On-Resistance<br>~~ee~~|RDS(ON)<br>~~ee~~|—<br>~~ee~~|35<br>38.5<br>46.4<br>53.3<br>64.7<br>~~ee~~|42<br>50<br>65<br>80<br>110<br>~~ee~~|mΩ|VGS= 4.5V, ID= 1.0A<br>VGS= 2.5V, ID= 1.0A<br>VGS= 1.8V, ID= 0.5A<br>VGS= 1.5V, ID= 0.2A<br>VGS= 1.2V,ID= 0.1A|
|Forward Transfer Admittance||Yfs||—|6.0|—|S|VDS= 6V,IS= 1.0A|
|BodyDiode Forward Voltage|VSD|—|0.7|1|V|VGS= 0V,IS= 1.0A|
|**DYNAMIC CHARACTERISTICS(Note 8)**<br>~~———————~~<br>~~ee~~|||||||
|Input Capacitance<br>~~———————~~|Ciss|—|698<br>~~ee~~|908<br>~~ee~~|pF<br>~~ee~~|VDS= 6V, VGS= 0V,<br>f = 1.0MHz<br>~~ee~~|
|Output Capacitance<br>~~———————~~|Coss|—|97<br>~~ee~~|127<br>~~ee~~|pF<br>~~ee~~||
|Reverse Transfer Capacitance<br>~~———————~~|Crss|—|90<br>~~ee~~|126<br>~~ee~~|pF<br>~~ee~~||
|Gate Resistance<br>~~———————~~|Rg<br>~~a~~|—<br>~~a~~|1.3<br>~~ee~~|2.6<br>~~ee~~<br>~~ee~~|Ω<br>~~ee~~<br>~~ee~~|VDS= 0V,VGS= 0V,f = 1MHz<br>~~ee~~<br>~~ee~~|
|Total Gate Charge<br>~~———~~|Qg <br>~~———~~<br>~~a~~|—<br>~~———~~<br>~~a~~|9.6<br>~~———~~|15<br>~~———~~<br>~~ee~~|nC<br>~~———~~<br>~~ee~~|VGS= 4.5V, VDS= 6V,<br>ID= 1.0A<br>~~———~~<br>~~ee~~<br>~~ee~~|
|Gate-Source Charge<br>~~———~~|Qgs<br>~~———~~<br>~~a~~|—<br>~~———~~<br>~~a~~|0.9<br>~~———~~|—<br>~~———~~<br>~~ee~~|nC<br>~~———~~<br>~~ee~~||
|Gate-Drain Charge<br>~~———~~<br>~~ee~~|Qgd<br>~~———~~<br>~~a~~<br>~~ee~~|—<br>~~———~~<br>~~a~~<br>~~ee~~|0.9<br>~~———~~<br>~~ee ee~~|—<br>~~———~~<br>~~ee~~<br>~~ee~~|nC<br>~~———~~<br>~~ee~~<br>~~ee~~||
|Turn-On DelayTime<br>~~ee~~|tD(ON)<br>~~a~~<br>~~ee~~|—<br>~~a~~<br>~~ee~~|5.2<br>~~ee ee~~|10<br>~~ee~~<br>~~ee~~|ns<br>~~ee ~~<br>~~ee~~|VDD= 6V, ID= 1.0A<br>VGEN= 4.5V, RG= 1Ω, RL= 6Ω<br> ~~ee~~<br>~~ee~~|
|Turn-On Rise Time<br>~~ee~~|tR<br>~~ee~~|—<br>~~ee~~|6.7<br>~~ee ee~~|14<br>~~ee~~|ns<br>~~ee~~||
|Turn-Off DelayTime<br>~~ee~~|tD(OFF)<br>~~ee~~|—<br>~~ee~~<br>~~a~~|16.6<br>~~ee ee~~<br>~~GO~~<br>~~a~~|32<br>~~ee~~<br>~~a~~|ns<br>~~ee~~<br>~~ee~~||
|Turn-Off Fall Time<br>~~ee~~<br>~~Gn~~|tF<br>~~ee~~<br>~~Gn~~|—<br>~~ee~~<br>~~Gn~~<br>~~a~~|2<br>~~ee ee~~<br>~~Gn~~<br>~~GO~~<br>~~a~~|4<br>~~ee~~<br>~~Gn~~<br>~~a~~|ns<br>~~ee~~<br>~~Gn~~<br>~~ee~~||
|Reverse RecoveryCharge<br>~~ee~~<br>~~————~~|QRR<br>~~ee~~<br>~~————~~|—<br>~~ee~~<br>~~————~~<br>~~a~~|0.7<br>~~ee ee~~<br>~~GO~~<br>~~————~~<br>~~a~~|1.5<br>~~ee~~<br>~~————~~<br>~~a~~|nC<br>~~ee~~<br>~~————~~<br>~~ee~~|IF= 1A, di/dt = 100A/μs<br>~~ee~~<br>~~————~~|
|BodyDiode Reverse RecoveryTime<br>~~————~~|tRR<br>~~————~~|—<br>~~————~~<br>~~a~~|6.9<br>~~————~~<br>~~a~~|14<br>~~————~~<br>~~a~~|ns<br>~~————~~<br>~~ee~~||



6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate. 

7. Short duration pulse test used to minimize self-heating effect. 

8. Guaranteed by design. Not subject to production testing. 

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**DMN1054UCB4** 

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10 10<br>VGS  = 8.0V<br>VGS = 4.5V VDS = 5.0V<br>8 VGS = 3.0V 8<br>VGS = 2.5V<br>VGS = 2.0V VGS = 1.2V TA = 150°C<br>6 VGS = 1.5V 6<br>TA  = 125°C<br>4 f-—of 4 —f-<br>TA = 85°C<br>2 2<br>Poof VGS = 1.0V TA  = 25°C<br>TA = -55°C<br>0 ye 0<br>0 0.5 1 1.5 2 2.5 3 0.5 0.7 0.9 1.1 1.3 1.5<br>V DS, DRAIN -SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 1 Typical Output Characteristics Figure 2 Typical Transfer Characteristics<br>0.045 0.1<br>0.04 VGS = 2.5V 0.08 ID = 1.0A<br>VGS = 4.5V<br>0.035<br>0.06<br>0.03<br>0.04<br>0.025<br>0 2 4 6 8 10 0.02<br>I D, DRAIN SOURCE CURRENT (A) 0 2 4 6 8<br>Figure 3 Typical On-Resistance vs.  VGS, GATE-SOURCE VOLTAGE (V)<br>Drain Current and Gate Voltage  Figure 4 Typical Transfer Characteristic<br>0.055 1.4<br>VGS = 4.5V<br>0.05 1.3 VGS = 2.5V<br>TA = 150°C ID = 1A<br>0.045 eeBEREREREEE TA = 125°C 1.2 eeeSERRA VGS = 4.5V 2<br>ID = 1A<br>TA = 85°C<br>0.04<br>1.1<br>pee nunurate<br>0.035 BERREREEEE T A  = 25°C 1 TIAL<br>0.03<br>EE<br>0.9<br>TA = -55°C<br>0.025 TTT | ee<br>0 1 2 3 4 5 6 ET 7 8 9 10 0.8 ATT TTT<br>ID, DRAIN CURRENT (A) -50 -25 0 25 50 75 100 125 150<br>Figure 5 Typical On-Resistance vs.  TJ, JUNCTION TEMPERATURE (C)<br>Drain Current and Temperature  Figure 6 On-Resistance Variation with Temperature<br>, DRAIN-SOURCE<br>DS(ON)<br>R<br>ON-RESISTANCE (NORMALIZED)<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>DS(ON)<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>, DRAIN CURRENT (A)<br>ID<br>D<br>, DRAIN CURRENT (A)<br>I<br>**----- End of picture text -----**<br>


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**DMN1054UCB4** 

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0.06 1<br>0.9<br>0.055 PT TTT Ty yd “TEEPE ET<br>0.8<br>0.05 V GS  = 2.5V 0.7 ID = 1mA<br>ID = 1A<br>0.045 Pe 0.6 ID = 250µA<br>CTT A VGS  = 4.5V 0.5 ASS<br>0.04 ID = 1A<br>Saneecen 0.4 aaa-<cen<br>0.3<br>0.035 BaeZannn Serer AS<br>0.2<br>0.03<br>0.1<br>ati | HERE<br>0.025 SEaeenne 0 CEREE EEE<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (C) TTJA, AMBIENT TEMPERATURE (°C), AMBIENT TEMPERATURE (°C)<br>Figure 7 On-Resistance Variation with Temperature Figure 8 Gate Threshold Variation vs. Ambient Temperature<br>10 100000<br>10000<br>8 TA= 150°C TA= 150°C<br>a I ———<br>1000 TA= 125°C<br>6 TA= 125°C<br>lO 100 6 ===e= TA = 85°C<br>4<br>OH TA= 85°C 10 =<br>2 TA= 25°C 1 TA = 25°C<br>TA= -55°C 0.1<br>0 A 0 SSS 2 4 6 8 10 12<br>0 0.3 0.6 0.9 1.2 1.5 V DS, DRAIN-SOURCE VOLTAGE (V)<br>V SD, SOURCE-DRAIN VOLTAGE (V) Figure 10 Typical Drain-Source Leakage Current<br>Figure 9 Diode Forward Voltage vs. Current vs. Voltage<br>10000<br>100 Tf = 1MHz A = 125°C<br>= =——————<br>T A = 125°C 1000 Ciss<br>—- TA= 150°C<br>TA= -55°C<br>10<br>oo TA = 85°C T A = 25°C et<br>100 Coss<br>——— NN<br>Crss<br>=== ee<br>1<br>10<br>0 ft 2 4 6 8 0 a 2 4 6 8 10 12<br>VGS, GATE-SOURCE VOLTAGE (V) V DS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 11 Gate-Source Leakage Current Figure 12 Typical Junction Capacitance<br>vs. Voltage<br>DS(on)<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>, JUNCTION CAPACITANCE (pF)<br>CT<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(TH)<br>V<br>, LEAKAGE CURRENT (nA)<br>IDSS<br>, SOURCE CURRENT (A)<br>IS<br>, LEAKAGE CURRENT (nA)<br>IGSS<br>**----- End of picture text -----**<br>


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100 400<br>RDS(on) Single Pulse<br>Limited ee<br>Seine ete ' Rthja = 167°C/W<br>Rthja(t) = Rthja * r(t)<br>10 PT NUE TT 300 \ TJ - TA = P * Rthja(t)<br>pT —eNR ENNee<br>[og NNC NN<br>[INN<br>DC Sat X N Ta TTO<br>1 PW = 10s 200<br>PW = 1s<br>ee P W  = 100ms YNANSCTTTNee<br>P W  = 10ms<br>0. 1 r_4 T J (m ax )= 150 ° C | PW P  = 1ms W = 1 NRA 00µs ANS | 100 \<br>T A = 25°C fh<br>V GS  = 4.5V esLe OO OO<br>Single Pulse<br>0.01 DUT on 1 * MRP Board a alll 0 N l<br>0.1 1 10 100 0.00001 0.001 0.1 10 1000<br>VDS, DRAIN-SOURCE VOLTAGE (V) t1, PULSE DURATION TIME (sec)<br>Figure 13 SOA, Safe Operation Area Figure 14 Single Pulse Maximum Power Dissipation<br>1<br>D = 0.9<br>PE D = 0.7<br>D = 0.5 err TT<br>by [CP] mn ttt<br>D = 0.3 er<br>HHH reg<br>0.1 PLem | LILI LET LIM EMIT UTH<br>D = 0.1<br>ER UII ee<br>D = 0.05<br>TT ee<br>a 7<br>D = 0.02<br>inane<br>0.01 eyaT<br>FS D = 0.01<br>D = 0.005<br>PAZDY a Rthja(t) = r(t) * Rthja UT<br>Single Pulse R thja  = 169°C/W<br>Duty Cycle, D = t1/ t2<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1, PULSE DURATION TIME (sec)<br>Figure 15  Transient Thermal Resistance<br>(PK)<br>, PEAK TRANSIENT POIWER (W)<br>P<br>D<br>, DRAIN CURRENT (A)<br>I<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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**DMN1054UCB4** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

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X1-WLB0808-4<br>**----- End of picture text -----**<br>


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E e Ø  b (4x)<br>Pin1<br>D<br>e<br>fit A3(Backside Coating)<br>A2<br>A<br>A1<br>Seating Plane<br>s oit<br>**----- End of picture text -----**<br>


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X1-WLB0808-4<br>Dim  Min  Max  Typ<br>A  0.3320  0.4180 0.3750<br>A1  0.1350  0.1650 0.1500<br>A2  0.1750  0.2250 0.2000<br>A3  0.0220  0.0280 0.0250<br>b  0.1971  0.2409 0.2190<br>D  0.7900 0.8300 0.8100<br>E  0.7900 0.8300 0.8100<br>e  0.400 BSC<br>All Dimensions in mm<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**X1-WLB0808-4** 

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Ø  D (4x)<br>C<br>|<br>C<br>ON 38:<br>**----- End of picture text -----**<br>


|**Dimensions**|**Value**<br>**(in mm)**|
|---|---|
|**C**|0.4000|
|**D**|0.2190|



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DMN1054UCB4 Document number: DS37579  Rev. 5 - 2 

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**DMN1054UCB4** 

## **IMPORTANT NOTICE** 

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Copyright © 2016, Diodes Incorporated 

**www.diodes.com** 

7 of 7 **www.diodes.com** 

DMN1054UCB4 Document number: DS37579  Rev. 5 - 2 

August 2016 © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/DMN1054UCB4-7/power-mosfet-n-channel-8-v-27-a-0035-ohm-x1)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/dmn1054ucb4-7/mosfet-n-ch-8v-2-7a-x1-wlb0808/dp/3943508RL)
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