# Power MOSFET, N Channel, 12 V, 10.7 A, 7000 µohm, TSOT-26, Surface Mount

![Product image](https://novapart.co/image/farnell:3943505/)

**URL**: https://novapart.co/products/DMN1019UVT-7/power-mosfet-n-channel-12-v-107-a-7000-ohm-tsot-26
**SKU**: DMN1019UVT-7
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.1080
**Stock**: 200+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 6Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 1.73W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 4.5V |
| Transistor Case Style | TSOT-26 |
| Drain Source Voltage Vds | 12V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 10.7A |
| Drain Source On State Resistance | 7000µohm |
| Gate Source Threshold Voltage Max | 530mV |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943505/)

**DMN1019UVT 12V N-CHANNEL ENHANCEMENT MODE MOSFET** 

|NEW PRODUCT<br>||**DMN1019UVT**<br>**12V N-CHANNEL ENHANCEMENT MODE MOSFET**<br>**Product Summary**<br>**V(BR)DSS**<br>**RDS(ON) MAX**<br>**ID **<br>**TA = +25°C**<br>12V<br>10mΩ@VGS= 4.5V<br>10.7A<br>12mΩ@VGS= 2.5V<br>9.8A<br>14mΩ@VGS= 1.8V<br>9.1A<br>18mΩ@VGS= 1.5V<br>8.0A<br>41mΩ@VGS= 1.2V<br>5.3A<br>**Description**<br>This new generation MOSFET has been designed to minimize the on-<br>state resistance (RDS(ON)) and yet maintain superior switching<br>performance, making it ideal for high efficiency power management<br>applications.<br>**Applications**<br><br>Load Switch<br>**Features**<br><br>Low On-Resistance<br><br>ESD Protected Gate<br><br>**Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)**<br><br>**Halogen and Antimony Free. “Green” Device (Note 3)**<br>**Mechanical Data**<br><br>Case: TSOT26<br><br>Case Material – Molded Plastic. UL Flammability Rating 94V-0<br><br>Moisture Sensitivity: Level 1 per J-STD-020<br><br>Terminals: Finish - Matte Tin Solderable per MIL-STD-202,<br>Method 208<br><br>Terminal Connections: See Diagram<br><br>Weight: 0.008 grams (Approximate)<br>**e3**<br>~~DIODES.~~<br>~~&~~.~~7~~|
|---|---|



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DMN1019UVT<br>12V N-CHANNEL ENHANCEMENT MODE MOSFET<br>Features<br>ID   Low On-Resistance<br>TA = +25°C   ESD Protected Gate<br>10.7A   Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)<br>9.8A<br> Halogen and Antimony Free. “Green” Device (Note 3)<br>9.1A<br>8.0A<br>Mechanical Data<br>5.3A<br> Case: TSOT26<br> Case Material – Molded Plastic. UL Flammability Rating 94V-0<br> Moisture Sensitivity: Level 1 per J-STD-020<br> Terminals: Finish - Matte Tin Solderable per MIL-STD-202,<br>Method 208  e3<br> Terminal Connections: See Diagram<br> Weight: 0.008 grams (Approximate)<br>& . 7<br>D<br>TSOT26<br>D 1 6 D<br>D 2 5 D G<br>G 3 4 S<br>Top View  Gate Protection Diode S<br>Top View  Pin Configuration  Equivalent Circuit<br>**----- End of picture text -----**<br>


- Load Switch 

- DC-DC Converters 

- Power Management Functions 

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ESD PROTECTED<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information**(Note 4)|**Ordering Informationg Information Information**(Note 4)|**Ordering Informationg Information Information**(Note 4)|
|---|---|---|
||||
|**Part Number**|**Case**|**Packaging**|
|DMN1019UVT-7|TSOT26|3,000/Tape &Reel|
|DMN1019UVT-13|TSOT26|10,000/Tape &Reel|



- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 

   2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. 

## **Marking Information** 

|Date Code Ke<br>~~[_~~<br>~~;~~|Date Code Key<br>**Year**<br>**Code**<br>**Month**<br>**Code**|**2015**<br>C<br>**Jan**<br>1|**Feb**<br>2|**DMN**<br>**YM**<br>**2016**<br>**2017**<br>D<br>E<br>**Mar**<br>**Apr**<br>3<br>4<br>oon!|**2018**<br>**2019**<br>F<br>G<br>**May**<br>**Jun**<br>**Jul**<br>**Aug**<br>5<br>6<br>7<br>8<br>DMN =Product Type Marking Code<br>YMorYM = Date Code Marking<br>Y or Y = Year (ex: C = 2015)<br>M = Month (ex: 9 = September)<br> ~~-~~|**2020**<br>H<br>**Sep**<br>9|**2021**<br>I<br>**Oct**<br>O|**Nov**<br>N|**2022**<br>J<br>**Dec**<br>D|
|---|---|---|---|---|---|---|---|---|---|



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DMN1019UVT Document number: DS37506  Rev. 2 - 2 

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**DMN1019UVT** 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|
|||||||
|**Characteristic**|||**Symbol**|**Value**|**Units**|
|Drain-Source Voltage|||VDSS|12|V|
|Gate-Source Voltage|||VGSS|±8|V|
|Continuous Drain Current (Note 5) VGS= 4.5V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|10.7<br>8.6|A|
||t<10s|TA= +25°C<br>TA= +70°C|ID|12.7<br>10.1|A|
|Pulsed Drain Current(10µs Pulse,DutyCycle = 1%)|||IDM|70|A|
|Maximum BodyDiode Forward Current(Note 5)|||IS|2|A|
|Avalanche Current(Note 6)L = 0.1mH|||IAS|9.7|A|
|Avalanche Energy (Note 6)L =0.1mH|||EAS|4.7|mJ|



## **Thermal Characteristics** 

|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|
|---|---|---|---|---|
||||||
|**Characteristic**||**Symbol**|**Value**|**Units**|
|Total Power Dissipation (Note 5)|TA= +25°C|PD|1.73|W|
||TA= +70°C||1.11||
|Thermal Resistance, Junction to Ambient (Note 5)|SteadyState|RθJA|72.2|°C/W|
||t<10s||37.5|°C/W|
|Thermal Resistance,Junction to Case(Note 5)||RθJC|14.4|°C/W|
|Operatingand Storage Temperature Range||TJ,TSTG|-55 to +150|°C|



|**Electrical Characteristics** (@TA= +25°C, unless otherwise specified.)|= +25°C, unless otherwise specified.)|= +25°C, unless otherwise specified.)|= +25°C, unless otherwise specified.)||||
|---|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS(Note 7)**<br>~~———~~|||||||
|Drain-Source Breakdown Voltage<br>~~———~~|BVDSS<br>|12<br>|—<br>|—|V|VGS= 0V,ID= 250µA|
|Zero GateVoltageDrainCurrent<br>~~———~~|IDSS<br>|—<br>|—<br>|1|µA|VDS= 12V,VGS= 0V|
|Gate-BodyLeakage<br>~~———~~|IGSS<br>|—<br>|—<br>|±2|µA|VGS= ±8V,VDS= 0V|
|**ON CHARACTERISTICS(Note 7)**<br>~~———~~|||||||
|Gate Threshold Voltage<br>|VGS(TH)<br>|0.35<br>|0.53<br>|0.8|V|VDS= VGS,ID= 250µA|
|Static Drain-Source On-Resistance<br>~~EE~~|GS(TH)<br>RDS(ON)<br>~~EE~~|—<br>~~EE~~|7<br>~~EE~~|10|mΩ|VGS= 4.5V,ID= 9.7A<br>~~ES~~|
|||—<br>~~EE~~|8<br>~~EE~~|12||VGS= 2.5V,ID= 9A<br>~~ES~~|
|||—<br>~~EE~~|10<br>~~EE~~|14||VGS= 1.8V,ID= 8.1A<br>~~ES~~|
|||—<br>~~EE~~|14<br>~~EE~~|18||VGS= 1.5V,ID= 4.5A<br>~~ES~~|
|||—<br>~~EE~~|28<br>~~EE~~|41||VGS= 1.2V,ID= 2.4A<br>~~ES~~|
|Diode Forward Voltage<br>~~EE~~|VSD<br>~~EE~~|—<br>~~EE~~|0.8<br>~~EE~~|1.2|V|VGS= 0V,IS= 10A<br>~~ES~~|
|**DYNAMIC CHARACTERISTICS(Note 8)**|||||||
|Input Capacitance<br>~~ne~~|Ciss<br>~~ne~~|—<br>~~ne~~|2588<br>~~ne~~|—<br>~~ne~~|pF<br>~~ne~~|VDS= 10V, VGS= 0V,<br>f = 1MHz<br>~~ne~~|
|Output Capacitance<br>~~ne~~|Coss<br>~~ne~~|—<br>~~ne~~|415<br>~~ne~~|—<br>~~ne~~|pF<br>~~ne~~||
|ReverseTransferCapacitance<br>~~ne~~|Crss<br>~~ne~~|—<br>~~ne~~|394<br>~~ne~~|—<br>~~ne~~|pF<br>~~ne~~||
|Gate Resistance|Rg|—|1.1|—|Ω|VDS= 0V,VGS= 0V,f = 1MHz|
|Total Gate Charge(VGS= 8V)<br>~~eee~~|g<br>Qg<br>~~eee~~|—<br>~~eee~~|50.4<br>~~eee eee~~|—<br>~~eee~~|nC<br>~~eee~~|VDS= 4V, ID= 10A<br>~~eee~~|
|Total Gate Charge(VGS= 4.5V)<br>~~eee~~|g<br>Qg<br>~~eee~~|—<br>~~eee~~|28.0<br>~~eee eee~~|—<br>~~eee~~|||
|Gate-Source Charge<br>~~eee~~|g<br>Qgs<br>~~eee~~|—<br>~~eee~~|3.2<br>~~eee eee~~|—<br>~~eee~~|||
|Gate-Drain Charge<br>~~eee~~|gs<br>Qgd<br>~~eee~~|—<br>~~eee~~|5.6<br>~~eee eee~~|—<br>~~eee~~|||
|Turn-On DelayTime<br>~~eee~~|tD(ON)<br>~~eee~~|—<br>~~eee~~|4.7<br>~~eee eee~~|—<br>~~eee~~|ns<br>~~eee~~|VDD= 4V, VGEN= 5V, ID= 10A,<br>RG= 1Ω, RL= 0.4Ω<br>~~eee~~<br>~~——~~|
|Turn-Off DelayTime<br>~~eee~~|D(ON)<br>tD(OFF)<br>~~eee~~|—<br>~~eee~~|32.2<br>~~eee eee~~|—<br>~~eee~~|ns<br>~~eee~~||
|Turn-On RiseTime<br>~~eee~~|tR<br>~~eee~~|—<br>~~eee~~<br>~~a~~|3.7<br>~~eee eee~~<br>~~a~~|—<br>~~eee~~<br>~~a~~|ns<br>~~eee~~<br>~~a~~||
|Turn-Off Fall Time<br>~~eee~~<br>~~——~~|tF<br>~~eee~~<br>~~——~~|—<br>~~eee~~<br>~~——~~<br>~~a~~|11.6<br>~~eee eee~~<br>~~——~~<br>~~a~~|—<br>~~eee~~<br>~~——~~<br>~~a~~|ns<br>~~eee~~<br>~~——~~<br>~~a~~||
|BodyDiode Reverse RecoveryTime<br>~~——~~|tRR<br>~~——~~|—<br>~~——~~<br>~~a~~|20.55<br>~~——~~<br>~~a~~|—<br>~~——~~<br>~~a~~|ns<br>~~——~~<br>~~a~~|IF= 10A,di/dt = 100A/μs<br>~~——~~|
|BodyDiode Reverse RecoveryCharge<br>~~——~~|Qrr<br>~~——~~|—<br>~~——~~<br>~~a~~|4.5<br>~~——~~<br>~~a~~|—<br>~~——~~<br>~~a~~|nC<br>~~——~~<br>~~a~~|IF= 10A, di/dt= 100A/μs<br>~~——~~|



7. Short duration pulse test used to minimize self-heating effect. 

8. Guaranteed by design. Not subject to product testing. 

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25.0  10<br>VGS=1.5V VDS=5.0V<br>20.0  VGS=2.0V 8<br>a VGS=2.5V e  |e<br>15.0  VGS=3.0V 6<br>R VGS=4.5V o<br>10.0  VGS=8.0V 4<br>Po VGS=1.2V 85 ℃<br>150 ℃<br>5.0  |Po 2 125 ℃ Hhal 25 ℃<br>VGS=1.0V -55 ℃<br>0.0  se) 0  a<br>0 1 2 3 4 5 0 0.5 1 1.5 2<br>VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 1 Typical Output Characteristic Figure 2 Typical Transfer Characteristic<br>0.02 0.05<br>0.04<br>0.015<br>VGS=1.5V ID=9.7A<br>q _T 0.03 ee Ho e<br>0.01 VGS=2.5V<br>er 0.02 ee e<br>VGS=4.5V<br>0.005 ID=8.1A<br>0.01<br>eA Ce<br>ID=4.5A<br>0 0<br>0 FULL) 4 8 12 16 20 =  DRS 1 2 3 4 5 6 7 8<br>ID, DRAIN-SOURCE CURRENT (A)  VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 3 Typical On-Resistance vs Drain Current and  Figure 4 Typical On-Resistance vs Drain Current and<br>Gate Voltage  Gate Voltage<br>0.015 2<br>VGS=4.5V<br>1.8<br>150 ℃ 125 ℃ 85 ℃<br>1.6<br>0.01 a pt} | Et V  tt GS=2.5V, ID=9A<br>1.4<br>rn eeeeesee VGS=4.5V, ID=9.7A<br>ee 4<br>1.2<br>25 ℃<br>0.005 -55 ℃ 1 VGS=1.8V, ID=8.1A<br>eee 0.8 VGS=1.5V, ID=4.5A<br>0.6<br>0 Po 0.4 eeei<br>0 3 6 9 12 15 -50 -25 0 25 50 75 100 125 150<br>ID, DRAIN CURRENT (A) TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 5 Typical On-Resistance vs Drain Current and  Figure 6 On-Resistance Variation with Temperature<br>Temperature<br>, DRAIN CURRENT (A)<br>, DRAIN CURRENT (A)ID ID<br>, DRAIN-SOURCE ON-RESISTANCE (Ω) , DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON) DS(ON)<br>R R<br>,  DRAIN-SOURCE<br>(NORMALIZED)<br>DS(ON)ON-RESISTANCE (Ω)<br>R<br>, DRAIN-SOURCE ON-RESISTANCE<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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0.02<br>VGS=1.8V, ID=8.1A<br>0.015 VGS=1.5V, ID=4.5A<br>0.01<br>--<br>VGS=4.5V, ID=9.7A<br>0.005<br>VGS=2.5V, ID=9A<br>0<br>too<br>-50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 7 On-Resistance Variation with Temperature<br>(NORMALIZED)<br>, DRAIN-SOURCE ON-ESISTANCE<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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20<br>VGS=0V<br>eee | ee<br>15<br>eee |<br>eee ||<br>10 eee |)<br>ff<br>TA=85 ℃<br>5 TA=150 ℃<br>TA=25 ℃<br>ff<br>TA=125 ℃<br>TA=-55 ℃<br>im<br>0<br>0 0.2 0.4 0.6 0.8 1 1.2<br>VSD, SOURCE-DRAIN VOLTAGE (V)<br>Figure 9 Diode Forward Voltage vs Current<br>10000<br>f=1MHz<br>S S SS<br>< Ciss =<br>1000  N e<br>Coss<br>SS SS<br>Crss<br>S S S<br>100  Pt tt tt<br>0 2 4 6 8 10 12<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 11 Typical Junction Capacitance<br>, SOURCE CURRENT (A)<br>IS<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br>**----- End of picture text -----**<br>


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0.9<br>0.6 ID=1mA<br>ID=250µA<br>MSN<br>0.3<br>0<br> LLL<br>-50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 8 Gate Theshold Variation vs Junction<br>Temperature<br>, GATE THESHOLD VOLTAGE (V)<br>GS(TH)<br>V<br>**----- End of picture text -----**<br>


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100000<br>===== === =<br>10000 150 ℃<br>=aGeeeeee=<br>125 ℃<br>1000 =======— _-————== —<br>85 ℃<br>100<br>pe<br>10<br>25 ℃<br>1 Pe Pe<br>1 2 3 4 5 6 7 8 9 10 11 12<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 10 Typical Drain-Source Leakge Current vs<br>Voltage<br>, LEAKAGE CURRENT (nA)<br>IDSS<br>**----- End of picture text -----**<br>


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8<br>7<br>pf | |TA<br>6<br>eee<br>5<br>4<br>3<br>OK<br>VDS=4V, ID=10A<br>2<br>1<br>0 ft TT [TT]<br>0 10 20 30 40 50 60<br>Qg (nC)<br>Figure 12 Gate Charge<br>(V)<br>GS<br>V<br>**----- End of picture text -----**<br>


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100<br>SSS<br>R PeDASTPENEa<br>DS(ON) a 2 TT<br>Limited HTTaNTENTTTTT<br>10 | ONE<br>TTI et NO PTT<br>Pate NRA NEN<br>maraes»|| PWDC=10s  SQLSPSSONOS Pt TT<br>1 Ye PW=1s  ZINNWSOUN NI!<br>Po} ft PW=100ms  LTTANSEOPINNAASTTTINpoy<br>Ptel = PW=10ms  SARAPOREEll<br>0.1 TJ(Max)=150 ℃ PW=1ms  SSDSTT<br>TA=25 ℃ PW=100µs<br>rr<br>VGS=4.5V aa<br>Single Pulse<br>DUT on 1*MRP Board<br>0.01<br>0.01 0.1 1 10 100<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 13 SOA, Safe Operation Area<br>1 ee  — ——— a<br>pTeenae eeeee ee<br>neee eee<br>ee a<br>Te D=0.9 Co<br>SS TiRED D=0.7 |<br>PTT| Nee HIE ETIPTTTT<br>D=0.5<br>0.1 popoON | D=0.3 asOee<br>po A ae a a aee<br>EettAt-aeae gnah, HTTaTTT8TP 0<br>Samniiiie”MGAalll aan D=0.1 aTec0<br>4 D=0.05<br>EgYK SMI ETI ETTTI TE ETT PT<br>YY D=0.02<br>0.01 ae eee 2 a OO OO OO<br>a”E"..47 ABELI460i D=0.01 [yya a 8<br>i" ALT a A 0 0 0<br>| TAIN a<br>an oi coon<br>D=0.005 RθJA (t)=r(t) * RθJA<br>RθJA=107 ℃ /W<br>D=Single Pulse Duty Cycle, D=t1 / t2<br>0.001<br>0.0001 0.001 0.01 0.1 1 10 100 1000 10000<br>t1, PULSE DURATION TIME (sec)<br>Figure 14 Transient Thermal Resistance<br>, DRAIN CURRENT (A)<br>ID<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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**DMN1019UVT** 

## **Package Outline Dimensions** 

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. 

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D TSOT26<br>e1 Dim  Min  Max Typ<br>A   1.00  <br>A1  0.01  0.10  <br>A2  0.84  0.90  <br>D    2.90<br>E1 E<br>BEEE E    2.80<br>ies c L2 ==== E1    1.60<br>b  0.30  0.45  <br><br>L c 0.12  0.20  <br>e 4x1 e   0.95<br>6x b e1    1.90<br>L  0.30 0.50<br>A A2 L2    0.25<br>θ  0°  8°  4°<br>A1 θ1  4°  12°  <br>Reece BEE All Dimensions in mm<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. 

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C C<br>Dimensions Value (in mm)<br>C  0.950<br>X  0.700<br>Y1<br>Y  1.000<br>Y1  3.199<br>Y (6x)<br>———<br>X (6x)<br>**----- End of picture text -----**<br>


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DMN1019UVT Document number: DS37506  Rev. 2 - 2 

April 2015 © Diodes Incorporated 

**DMN1019UVT IMPORTANT NOTICE** DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending.  Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference.  Only the English version of this document is the final and determinative format released by Diodes Incorporated. **LIFE SUPPORT** Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A.   Life support devices or systems are devices or systems which: i, | 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2015, Diodes Incorporated 

**www.diodes.com** 

7 of 7 **www.diodes.com** 

DMN1019UVT Document number: DS37506  Rev. 2 - 2 

April 2015 

© Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/DMN1019UVT-7/power-mosfet-n-channel-12-v-107-a-7000-ohm-tsot-26)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/dmn1019uvt-7/mosfet-n-ch-12v-10-7a-tsot-26/dp/3943505)
---

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