# Power MOSFET, N Channel, 12 V, 9.3 A, 0.01 ohm, SC-59, Surface Mount

![Product image](https://novapart.co/image/farnell:3127324RL/)

**URL**: https://novapart.co/products/DMN1019USN-13/power-mosfet-n-channel-12-v-93-a-001-ohm-sc-59
**SKU**: DMN1019USN-13
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.1160
**Stock**: 1000+
**Lead Time**: 78 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:9.3A; Drain Source Voltage Vds:12V; On Resistance Rds(on):0.007ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:530mV; P

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 680mW |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 680mW |
| Rds(On) Test Voltage | 4.5V |
| On Resistance Rds(On) | 0.007ohm |
| Transistor Case Style | SC-59 |
| Drain Source Voltage Vds | 12V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 9.3A |
| Drain Source On State Resistance | 0.01ohm |
| Automotive Qualification Standard | - |
| Gate Source Threshold Voltage Max | 530mV |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3127324RL/)

**DMN1019USN 12V N-CHANNEL ENHANCEMENT MODE MOSFET** 

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Product Summary<br>V(BR)DSS RDS(ON) MAX TA = +25°C ID A = +25°C ID  = +25°C ID ID D<br>10mΩ @ VGS = 4.5V  9.3A<br>12mΩ @ VGS = 2.5V  8.5A<br>12V  14mΩ @ VGS = 1.8V  7.9A<br>18mΩ @ VGS = 1.5V  6.9A<br>41mΩ @ VGS = 1.2V  4.6A<br>Description ption<br>This new generation MOSFET has been designed to minimize the on-<br>state resistance (RDS(ON)) and yet maintain superior switching DS(ON)) and yet maintain superior switching ) and yet maintain superior switching<br>performance, making it ideal for high efficiency power management<br>applications.<br>Applications pplications lications<br>: NEW PRODUCT  • DIODES. Load Switch<br>**----- End of picture text -----**<br>


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DMN1019USN<br>12V N-CHANNEL ENHANCEMENT MODE MOSFET<br>Features<br>TA = +25°C ID A = +25°C ID  = +25°C ID ID D  •• Low On-Resistance ESD Protected Gate<br>9.3A  • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)<br>8.5A<br>• Halogen and Antimony Free. “Green” Device (Note 3)<br>7.9A<br>• Qualified to AEC-Q101 Standards for High Reliability<br>6.9A<br>4.6A<br>Mechanical Data<br>• Case: SC59<br>• Case Material – Molded Plastic. UL Flammability Rating 94V-0<br>• Moisture Sensitivity:  Level 1 per J-STD-020<br>• Terminals: Finish - Matte Tin Solderable per MIL-STD-202,<br>Method 208  e3<br>• Terminal Connections: See Diagram<br>• Weight: 0.014 grams (approximate)<br>& . 7<br>SC59<br>D<br>D<br>G<br>G S Gate Protection Diode S<br>Top View<br>Top View Pin Configuration Equivalent Circuit<br>**----- End of picture text -----**<br>


**Description ption** • Case: SC59 • Case Material – Molded Plastic. UL Flammability Rating 94V-0 This new generation MOSFET has been designed to minimize the on• Moisture Sensitivity:  Level 1 per J-STD-020 state resistance (RDS(ON)) and yet maintain superior switching DS(ON)) and yet maintain superior switching ) and yet maintain superior switching • Terminals: Finish - Matte Tin Solderable per MIL-STD-202, performance, making it ideal for high efficiency power management Method 208 **e3** applications. • Terminal Connections: See Diagram • Weight: 0.014 grams (approximate) **Applications pplications lications** 

- Load Switch 

- DC-DC Converters 

- Power Management Functions i 

- ESD PROTECTED 

## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information**(Note 4)|**Ordering Informationg Information Information**(Note 4)|**Ordering Informationg Information Information**(Note 4)|
|---|---|---|
||||
|**Part Number**|**Case**|**Packaging**|
|DMN1019USN-7|SC59|3,000/Tape&Reel|
|DMN1019USN-13|SC59|10,000/Tape&Reel|



- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 

   2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. 

## **Marking Information** 

|||||||||||||||N7 = Product Type Marking Code|||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|||||||||**N7**||**YM**||||YM = Date Code Marking<br>Y = Year ex: A = 2013|||||
|||||||||||||||M = Month ex: 9 = September|||||
|Date Code Key<br>**Year**<br>**2013**<br>**Code**<br>A<br>**Month**<br>**Jan**<br>**Feb**<br>**Code**<br>1<br>2<br>~~———~~<br>~~——~~|||**2014**<br>**2015**<br>**2016**<br>**2017**<br>**2018**<br>B<br>C<br>D<br>E<br>F<br>**Mar**<br>**Apr**<br>**May**<br>**Jun**<br>**Jul**<br>**Aug**<br>**Sep**<br>3<br>4<br>5<br>6<br>7<br>8<br>9<br>~~eo~~||||||||||||**2019**<br>G<br>**Oct**<br>O|**Nov**<br>N||**2020**<br>H<br>**Dec**<br>D|



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**DMN1019USN** 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|
|||||||
|**Characteristic**|||**Symbol**|**Value**|**Units**|
|Drain-Source Voltage|||VDSS|12|V|
|Gate-Source Voltage|||VGSS|±8|V|
|Continuous Drain Current (Note 6) VGS= 4.5V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|9.3<br>7.4|A|
||t<10s|TA= +25°C<br>TA= +70°C|ID|11<br>8.8|A|
|Pulsed Drain Current(10µspulse,dutycycle = 1%)|||IDM|70|A|
|Maximum BodyDiode Forward Current(Note 6)|||IS|2|A|



## **Thermal Characteristics** 

|**Thermal Characteristics**|**Thermal Characteristics**||||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Units**|
|Total Power Dissipation (Note 5)|TA= +25°C|PD|0.68|W|
||TA= +70°C||0.4||
|Thermal Resistance, Junction to Ambient (Note 5)|Steadystate|RθJA|160|°C/W|
||t<10s||115|°C/W|
|Total Power Dissipation (Note 6)|TA= +25°C|PD|1.2|W|
||TA= +70°C||0.83||
|Thermal Resistance, Junction to Ambient (Note 6)|Steadystate|RθJA|96|°C/W|
||t<10s||68|°C/W|
|Thermal Resistance,Junction to Case(Note 6)||RθJC|18|°C/W|
|Operatingand Storage Temperature Range||TJ,TSTG|-55 to +150|°C|



## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||||
|---|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS(Note 7)**|||||||
|Drain-Source Breakdown Voltage<br>~~ee~~|BVDSS<br>~~ee~~|12<br>~~ee~~|—<br>~~ee~~|—<br>~~ee~~|V<br>~~ee~~|VGS= 0V,ID= 250µA<br>~~ee~~|
|Zero Gate Voltage Drain Current<br>~~ee~~|IDSS<br>~~ee~~|—<br>~~ee~~|—<br>~~ee~~|1<br>~~ee~~|µA<br>~~ee~~|VDS=12V,VGS= 0V<br>~~ee~~|
|Gate-BodyLeakage<br>~~ee~~|IGSS<br>~~ee~~|—<br>~~ee~~|—<br>~~ee~~|±2<br>~~ee~~|µA<br>~~ee~~|VGS= ±8V,VDS= 0V<br>~~ee~~|
|**ON CHARACTERISTICS(Note 7)**|||||||
|Gate Threshold Voltage|VGS(th)|0.35|0.53|0.8|V|VDS= VGS,ID= 250µA|
|Static Drain-Source On-Resistance<br>~~a~~|RDS(ON)<br>~~===>~~|—<br>~~===>~~|7<br>~~===>~~|10<br>~~===>~~|mΩ<br>~~===>~~|VGS= 4.5V,ID= 9.7A<br>~~===>~~|
|||—<br>~~===>~~|8<br>~~===>~~|12<br>~~===>~~||VGS= 2.5V,ID= 9A<br>~~===>~~|
|||—<br>~~===>~~|10<br>~~===>~~|14<br>~~===>~~||VGS= 1.8V,ID= 8.1A<br>~~===>~~|
|||—<br>~~===>~~|14<br>~~===>~~|18<br>~~===>~~||VGS= 1.5V,ID= 4.5A<br>~~===>~~|
|||—<br>~~===>~~|28<br>~~===>~~|41<br>~~===>~~||VGS= 1.2V,ID= 2.4A<br>~~===>~~|
|Forward Transfer Admittance<br>~~a~~|IYfsI<br>~~===>~~|—<br>~~===>~~|28<br>~~===>~~|—<br>~~===>~~|S<br>~~===>~~|VDS= 4V,ID= 9.7A<br>~~===>~~|
|Diode Forward Voltage|VSD|—|0.8|1.2|V|VGS= 0V,IS= 10A|
|**DYNAMIC CHARACTERISTICS(Note 8)**|||||||
|Input Capacitance<br>~~———~~|Ciss<br>~~———~~|—<br>~~———~~|2426<br>~~———~~|—<br>~~———~~|pF<br>~~———~~|VDS= 10V, VGS= 0V,<br>f = 1MHz<br>~~———~~|
|Output Capacitance<br>~~———~~|Coss<br>~~———~~|—<br>~~———~~|396<br>~~———~~|—<br>~~———~~|pF<br>~~———~~||
|Reverse Transfer Capacitance<br>~~———~~|Crss<br>~~———~~|—<br>~~———~~|375<br>~~———~~|—<br>~~———~~|pF<br>~~———~~||
|Gate Resistance<br>~~———~~|Rg<br>~~———~~|—<br>~~———~~|1.1<br>~~———~~|—<br>~~———~~|Ω<br>~~———~~|VDS= 0V,VGS= 0V,f = 1MHz<br>~~———~~|
|Total Gate Charge(VGS= 8V)|Qg|—|50.6|—|nC<br>~~ee~~|VDS= 4V, ID= 10A<br>~~ee~~|
|Total Gate Charge(VGS= 4.5V)|Qg|—|27.3|—|||
|Gate-Source Charge|Qgs|—|3.4|—|||
|Gate-Drain Charge<br>~~——_———~~|Qgd|—|5.2|—<br>~~ee~~|||
|Turn-On DelayTime<br>~~——_———~~|tD(ON)|—|7.6|—<br>~~ee~~|ns<br>~~ee~~|VDD= 4V, VGEN= 5V, ID= 10A,<br>RG= 1Ω, RL= 0.4Ω<br>~~ee~~|
|Turn-Off DelayTime<br>~~——_———~~|tD(OFF)|—|22.2|—<br>~~ee~~|ns<br>~~ee~~||
|Turn-On Rise Time<br>~~——_———~~|tr|—|57.6|—<br>~~ee~~|ns<br>~~ee~~||
|Turn-Off Fall Time<br>~~——_———~~|tf|—|16.8|—<br>~~ee~~|ns<br>~~ee~~||



Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided. The power dissipation PD is based on t<10s RθJA. 6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2 oz. Copper, single sided. The power dissipation PD is based on t<10s RθJA. 7. Short duration pulse test used to minimize self-heating effect. 

8. Guaranteed by design. Not subject to production testing. 

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20.0 20<br>VGS = 8.0V VDS = 5.0V<br>18<br>VGS = 3.0V<br>16.0 16<br>VGS = 2.0V VGS =1.2V<br>14<br>VGS = 1.5V<br>12.0 12<br>10<br>8.0 [oR 8 TA = 150 ° C<br>6 TA = 125°C TA = 85°C<br>4.0 V GS = 1.0V 4 T A = 25°C<br>Po<br>2 T A  = -55°C<br>0.00 TT 1 2 3 4 5 00.2 SF 0.4 0.6 0.8 1 1.2 1.4 1.6<br>VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 1 Typical Output Characteristics Figure 2 Typical Transfer Characteristics<br>0.016 0.03<br>0.015 ID = 9.7A<br>titi tt tt 0.025 INTELL<br>0.014<br>ID = 8.1A<br>0.013 VGS = 1.5V<br>0.02<br>PERERA<br>0.012<br>ID = 4.5A<br>PREECE eee<br>0.011 SRR 0.015 |<br>0.01<br>P| | tt | VGS tt = 2.5V 0.01 YM} Et | f |<br>0.009<br>a <}++4+4<br>0.008 VGS = 4.5V<br>0.005<br>0.007 oo || Poere<br>0.006 2 CHEER 4 6 8 10 12 14 16 18 20 0 0 PLL 1 2 3 ELLE 4 5 6 7 8<br>ID, DRAIN-SOURCE CURRENT (A) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 3 Typical On-Resistance vs.  Figure 4 Typical Transfer Characteristics<br>Drain Current and Gate Voltage<br>0.015 1.6<br>0.014 PT VGS = 4.5V EE ETE VGS = 2.5V |<br>ID = 9A<br>0.013 T A  = 150°C 1.4 VGS  4.5= V<br>0.012 TA = 125°C ID = 9.7A<br>0.011 TA = 85 ° C 1.2<br>VGS  1= .5V<br>0.01 ID = 4.5A<br>0.009 ASEEE TA = 25°C 1 AZo~<br>0.008<br>0.007 ree tT  EEE TA = -55°C 0.8 ao<br>0.006<br>0.005 Pi} ttt tet yt 0.6 PLE LLL<br>0 2 4 6 8 10 12 14 16 18 20 -50 -25 0 25 50 75 100 125 150<br>ID, DRAIN CURRENT (A) TJ, JUNCTION TEMPERATURE (°C)<br>Figure 5 Typical On-Resistance vs.  Figure 6 On-Resistance Variation with Temperature<br>Drain Current and Temperature<br>, DRAIN CURRENT (A) ID , DRAIN CURRENT (A) ID<br>)<br>) Ω<br>Ω , DRAIN-SOURCE ON-RESISTANCE (<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>DS(ON) R<br>R<br>)Ω<br>, DRAIN-SOURCE<br>DS(ON)<br>R<br>, DRAIN-SOURCE ON-RESISTANCE (<br>ON-RESISTANCE (NORMALIZED)<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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0.02 0.8<br>VGS  1.5= V<br>0.018 ID = 4.5A<br>0.016 Se e ee 0.6 neenee<br>Tet a<br>0.014<br>VGS  2= .5V<br>ID = 9A<br>0.012 peepee) 0.4 PST<br>das SN<br>ID = 1mA<br>0.01 V IGSD = 9.7A   4.5= V ID = 250µA<br>0.008 ee 0.2<br>ea S<br>0.006<br>0.004 ~CEELELLAPF TT tf 0 PTT TTTR<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)<br>Figure 7 On-Resistance Variation with Temperature Figure 8 Gate Threshold Variation vs. Ambient Temperature<br>1820 eee | ee 10000 —-<br>f = 1MHz<br>A ——<br>16<br>14 C iss<br>eee | |e a<br>12 TA = 150°C<br>10 | a 1000 ALLEL<br>8 TA = 125°C<br>6 2 TA = 85°C a/} |/ | TA = 25°C \ C rss C oss<br>4 a T A = -55°C<br>2 i<br>0 —hf 100 || | | [ fl<br>0 0.2 0.4 0.6 0.8 1 1.2 0 2 4 6 8 10 12<br>VSD, SOURCE-DRAIN VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 9 Diode Forward Voltage vs. Current Figure 10 Typical Junction Capacitance<br>8 100<br>RDS(on)<br>Limited<br>fo CI et IN TT<br>6 10<br>DC<br>VDS = 4V<br>ID  10= A P W  = 10s<br>4 1 P W = 1s<br>PW = 100ms<br>P W = 10ms<br>P W = 1ms<br>2 0.1 TTJ(max)A = 25°=C 150°C P W  = 100µs<br>V GS  = 10V<br>Single Pulse<br>0 0.01 DUT on 1 * MRP Board LT<br>0 5 10 15 20 25 30 35 40 45 50 0.01 0.1 1 10 100<br>Qg [, TOTAL GATE CHARGE ] (nC) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 11 Gate Charge Figure 12 SOA, Safe Operation Area<br>)Ω<br>, GATE THRESHOLD VOLTAGE (V)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>GS(th)<br>DS(ON) V<br>R<br>, SOURCE CURRENT (A)<br>IS<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br>, DRAIN CURRENT (A)<br>ID<br> GATE THRESHOLD VOLTAGE (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


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1<br>D = 0.9<br>D = 0.7<br>SNE essen NarcanOre<br>D = 0.5<br>By CHIT eT ToT<br>HITTER D = 0.3 tt om] UTAPPTTT<br>0.1 IN D = 0.1 LA aef y TIE LAI LEAT | ST<br>7 |<br>D = 0.05<br>ECCT<br>0 7M<br>D = 0.02<br>SSCL HMI H<br>0.01 ee A a a<br>D = 0.01<br>a ae ae a ee<br>iaii ee 6acetate<br>eae [a] 7 ae ce ee | eeiTee<br>D = 0.005<br>*<br>PE D = Single Pulse LT TE tA R R θθJAJA(t) = r(t)  = 60°C/W  RθJA HH<br>Duty Cycle, D = t1/ t2<br>0.001<br>0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1, PULSE DURATION TIME (sec)<br>Figure 13 Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


## **Package Outline Dimensions** 

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. 

**==> picture [360 x 159] intentionally omitted <==**

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A<br>+L SC59<br>rH _ttC~‘C;SCSCOC~™S<br>Dim  Min  Max  Typ<br>— i | ee A  0.35  ee 0.50  ee 0.38<br>B C<br>B  1.50  1.70  1.60<br>C  2.70  3.00  2.80<br>~—7 iy ee ee ee<br>D  -  -  0.95<br>Zz 7 | ee ee ee<br>G G  -  -  1.90<br>}k——_ H ee H  2.90  ee 3.10  ee 3.00<br>+ ——> | ee J  0.013 ee 0.10  ee 0.05<br>K N M es K   a 1.00  1.30  1.10<br>1 | | rfeo es L  0.35  es 0.55  ee 0.40<br>M  0.10  0.20  0.15<br>aa J Par D k y |< L ( O+J e ee N  es a 0.70  eeee 0.80  eeee 0.75<br>α 0°  8°  -<br>es<br>rl All Dimensions in mm<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. 

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Y<br>_}<br>Z<br>| & + C<br>X E<br>**----- End of picture text -----**<br>


|**Dimensions**|**Value(in mm)**|
|---|---|
|**Z**|3.4|
|**X**|0.8|
|**Y**|1.0|
|**C**|2.4|
|**E**|1.35|



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DMN1019USN Document number: DS36999  Rev. 2 - 2 

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**DMN1019USN** [| 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

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Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending.  Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference.  Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2014, Diodes Incorporated 

**www.diodes.com** 

6 of 6 **www.diodes.com** 

DMN1019USN Document number: DS36999  Rev. 2 - 2 

May 2014 © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/DMN1019USN-13/power-mosfet-n-channel-12-v-93-a-001-ohm-sc-59)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/dmn1019usn-13/mosfet-n-ch-12v-9-3a-sc-59/dp/3127324RL)
---

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