# Power MOSFET, N Channel, 12 V, 11 A, 7000 µohm, U-DFN2020, Surface Mount

![Product image](https://novapart.co/image/farnell:3680116/)

**URL**: https://novapart.co/products/DMN1019UFDE-7/power-mosfet-n-channel-12-v-11-a-7000-ohm-u
**SKU**: DMN1019UFDE-7
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.1410
**Stock**: 1000+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 6Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | AEC-Q101 |
| Power Dissipation | 2.17W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 4.5V |
| Transistor Case Style | U-DFN2020 |
| Drain Source Voltage Vds | 12V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 11A |
| Drain Source On State Resistance | 7000µohm |
| Gate Source Threshold Voltage Max | 800mV |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3680116/)

**DMN1019UFDE** [S~*S **12V N-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|---|
|||||
|**BVDSS**|**RDS(ON) Max**|**Package**|**ID Max**<br>**TA = +25°C**|
|12V|10mΩ@VGS= 4.5V|U-DFN2020-6<br>(Type E)|11A|
||12mΩ@VGS= 2.5V||10|
||14mΩ@VGS= 1.8V||9A|
||18mΩ@VGS= 1.5V||8A|
||41mΩ@VGS= 1.2V||5A|



## **Description** 

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications. 

## **Features** 

- 0.6mm Profile – Ideal for Low Profile Applications 

- PCB Footprint of 4mm[2] 

- Low Gate Threshold Voltage 

- Fast Switching Speed 

- ESD Protected Gate 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found at** 

   - 

   - **https://www.diodes.com/products/automotive/automotive products/.** 

- **This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability.** 

**https://www.diodes.com/quality/product-definitions/** 

## **Applications** 

- Load Switching 

- Battery Management Application 

- Power Management Functions 

## **Mechanical Data** 

- Case: U-DFN2020-6 

- Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminals: Finish – NiPdAu over Copper Leadframe. Solderable per MIL-STD-202, Method 208 @) **e4** 

- Weight: 0.008 grams (Approximate) 

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U-DFN2020-6<br>(Type E)<br>(E) Pin1  ~<br>ESD PROTECTED<br>Bottom View<br>**----- End of picture text -----**<br>


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D<br>a:DI] :2 G<br>gd: Gate Protection Diode S<br>Pin Out<br>Bottom View  Equivalent Circuit<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

|||||
|---|---|---|---|
|**Part Number**|**Marking**|**Reel Size (inches)**|**Quantity Per Reel**|
|DMN1019UFDE-7|N7|7|3,000|



- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and 

Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

1 of 8 **www.diodes.com** 

DMN1019UFDE Datasheet number: DS35561 Rev. 7 - 2 

September 2020 © Diodes Incorporated 

**DMN1019UFDE** 

## **Marking Information** 

Site 1 

N7 = Product Type Marking Code YM = Date Code Marking **N7** Y = Year (ex: H = 2020) M = Month (ex: 9 = September) Date Code Key **Year 2011 … 2020 2021 2022 2023 2024 2025 2026 2027 2028 2029** ~~es~~ **Code** Y … H ~~ee~~ I ~~ee~~ J ~~ee~~ K ~~ee~~ L ~~ee~~ M ~~ee~~ N ~~ee~~ O ~~ee~~ P R **Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec** ~~a~~ **Code** 1 2 3 4 5 ~~ee~~ 6 7 8 ~~ee~~ 9 O N D Site 2 N7 = Product Type Marking Code YWX = Date Code Marking **N7** Y = Year (ex: 0 = 2020) W = Week (ex: a = Week 27; z Represents Week 52 and 53) X = Internal Code (ex: U = Monday) Date Code Key **Year 2011 … 2020 2021 2022 2023 2024 2025 2026 2027 2028 2029** ~~ee~~ **Code** 1 … 0 1 2 3 4 5 6 7 8 9 **Week 1-26 27-52 53 Code** A-Z a-z z ~~a ee ee ee ee ee ee~~ **Internal Code Sun Mon Tue Wed Thu Fri Sat** ~~—ee~~ **Code** T U V W X Y Z 

2 of 8 **www.diodes.com** 

DMN1019UFDE Datasheet number: DS35561 Rev. 7 - 2 

September 2020 © Diodes Incorporated 

**DMN1019UFDE** 

**Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|
|||||||
|**Characteristic**|||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage|||VDSS|12|V|
|Gate-Source Voltage|||VGSS|±8|V|
|Continuous Drain Current (Note 5) VGS= 4.5V|= 4.5V<br>Steady<br>State<br>t<5s|TA= +25°C<br>TA= +70°C|ID|11<br>9|A|
|||TA= +25°C<br>TA= +70°C|ID|14<br>11|A|
|Maximum Continuous BodyDiode Current|||IS|3.0|A|
|Pulsed Drain Current(10µs Pulse,DutyCycle = 1%)|||IDM|100|A|



## **Thermal Characteristics** 

|**Thermal Characteristics **|**Thermal Characteristics **|**Thermal Characteristics **|**Thermal Characteristics **|**Thermal Characteristics **|
|---|---|---|---|---|
||||||
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Total Power Dissipation (Note 5)|TA= +25°C|PD|0.69<br>0.44|W|
||TA= +70°C||||
|Thermal Resistance, Junction to Ambient (Note 5)|Steady State|RJA|182<br>118|°C/W|
||t<5s||||
|Total Power Dissipation (Note 6)|TA= +25°C|PD|2.17<br>1.38|W|
||TA= +70°C||||
|Thermal Resistance, Junction to Ambient (Note 6)|SteadyState|RJA|58<br>38|°C/W|
||t<5s||||
|Thermal Resistance,Junction to Case(Note 6)||RJC|10||
|Operatingand Storage Temperature Range||TJ, TSTG|-55 to +150|°C|



Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 

6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 

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10090 CUTE CLINE TTT A A UT<br>Single Pulse<br>80 RJA = 178C/W<br>| RJA(t) = r(t) * RJA<br>70 | TDUT on MRPJ - TA = P * RJA(t)<br>60<br>!<br>50 |<br>40 \<br>3020 a \ \<br>\<br>100 AT<br>0.0001 0.001 0.01 Niessen 0.1 1 10 100 1,000<br>t1, PULSE DURATION TIME (sec)<br>Fig. 1 Single Pulse Maximum Power Dissipation<br>, PEAK TRANSIENT POWER (W)<br>(PK)<br>P(PK)<br>, PEAK TRANSIENT POIWER (W)<br>P<br>**----- End of picture text -----**<br>


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100<br>Poy=OONig NINE NTT NY PW = 10µs [TTTCo<br>Pot TTPNET<br>R R DS(ON)DS(on)<br>LiLi mited<br>10 THT. CATT RRET<br>SE NINES HEH<br>PNACa a aNLTONE AN|TeeYD<br>DC<br>1 a PW = 10s SO R {<br>a PW = 1s II<br>peA A NAOTeSSNeS eeeree<br>P W  = 100ms<br>erent NON ONTE<br>ela PW = 10ms INORGINNNUNETTEET<br>0.1 TT J( max)max) = 150 = 150°癈C  esaeS PW PPW  = 1ms W = 100μs  = 100 |SSS 祍  EEE TIE<br>T AA = 25 癈°C  a<br>Single Pulse A<br>DUT on 1 * MRP Board<br>VGS = 8V<br>0.01 iN<br>0.01 0.1 LIANE 1 LUI 10 TLE 100<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 2 SOA, Safe Operation Area<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


3 of 8 **www.diodes.com** 

DMN1019UFDE Datasheet number: DS35561 Rev. 7 - 2 

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**DMN1019UFDE** 

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1 SSS D = 0.9<br>PE D = 0.7<br>D = 0.5 re<br>HEHE eee int<br>D = 0.3<br>Po SETIME TT T IEEREE aTeeeETEent<br>0.1<br>ELAMPEER D = 0.1 UU UE ETT<br>Er<br>D = 0.05 eT<br>by [CH] ee<br>eT<br>D = 0.02<br>TE eat<br>0.01 ATTEN<br>pS D = 0.01 28 2 eeDE eeeOeeee eeeceee ee ee ec TTER<br>Seen eee eeeae<br>D = 0.005 RJA(t) = r(t) *  RJA<br>LAa 2ep eee pa R JA  = 178C/W TTilTTT<br>Duty Cycle, D = t1/t2<br>D = Single Pulse<br>0.001 CouCACC<br>0.00001 0.0001 0.001 0.01 0.1 PO 1 Cc 10 100 TE 1,000<br>t1, PULSE DURATION TIME (sec)<br>Fig. 3 Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|
||||||
|**Characteristic**<br>~~PT~~|**Symbol**<br>**Min**<br>~~PT~~|**Typ **<br>**Max**<br>~~PT~~|**Unit**<br>~~PT~~|**Test Condition**<br>~~PT~~|
|**OFF CHARACTERISTICS(Note 7) **<br>~~PT~~<br>~~(GOGO~~|||||
|Drain-Source Breakdown Voltage<br>~~GG~~|BVDSS<br>12<br>~~GG~~|—<br>—<br>~~GG~~<br>~~(GO~~|V<br>~~GG~~<br>~~(GO~~|VGS= 0V,ID= 250μA<br>~~GG~~<br>~~GO~~|
|Zero Gate Voltage Drain Current TJ= +25°C<br>~~PT~~|IDSS<br>—<br>~~PT~~|—<br>1<br>~~(GO~~<br>~~PT~~<br>~~GO~~|µA<br>~~(GO ~~<br>~~PT~~<br>~~GO~~|VDS= 12V,VGS= 0V<br> ~~GO~~<br>~~PT~~<br>~~GO~~|
|Gate-Source Leakage<br>~~DDO~~|IGSS<br>—<br>~~DDO~~|—<br>±2<br>~~DDO~~<br>~~GO~~|µA<br>~~DDO~~<br>~~GO~~|VGS= ±8V,VDS= 0V<br>~~DDO~~<br>~~GO~~|
|**ON CHARACTERISTICS(Note 7) **<br>~~GO GO~~<br>~~PT~~|||||
|Gate Threshold Voltage<br>~~Pf~~|VGS(TH)<br>0.35<br>~~Pf~~<br>~~|~~|—<br>0.8<br>~~Pf~~<br>~~||~~|V<br>~~Pf~~<br>~~|~~|VDS= VGS,ID= 250μA<br>~~Pf~~<br>~~Po~~|
|Static Drain-Source On-Resistance|RDS(ON)<br>—<br>~~|~~<br>~~|~~<br>~~|~~<br>~~ae~~<br>~~|~~<br>~~GOGO~~|7<br>10<br>~~||~~<br>~~||~~|mΩ<br>~~|~~<br>~~|~~<br>~~|~~<br>~~ee~~<br>~~|~~<br>~~(OG~~|VGS= 4.5V,ID= 9.7A<br>VGS= 2.5V,ID= 9A<br>VGS= 1.8V,ID= 8.1A<br>VGS= 1.5V,ID= 4.5A<br>VGS= 1.2V,ID= 2.4A<br>~~Po~~<br>~~Po~~<br>~~Po~~<br>~~po~~<br>~~Po~~<br>~~(OG~~|
|||8<br>12<br>~~| |~~<br>~~||~~<br>~~||~~|||
|||10<br>14<br>~~| |~~<br>~~||~~<br>~~aeee~~|||
|||14<br>18<br>~~| |~~<br>~~aeee~~<br>~~||~~|||
|||28<br>41<br>~~ae ee~~<br>~~||~~<br>~~GO~~|||
|Forward Transfer Admittance<br>~~GO~~||Yfs|<br>—<br>~~|~~<br>~~GO~~<br>~~GOGO~~<br>~~GOGO~~|28<br>—<br>~~| |~~<br>~~GO~~<br>~~GO~~<br>~~GO~~|S<br>~~|~~<br>~~GO~~<br>~~(OG~~<br>~~(OG~~|VDS= 4V,ID= 9.7A<br>~~Po~~<br>~~GO~~<br>~~(OG~~<br>~~(OG~~|
|Diode Forward Voltage<br>~~GO~~|VSD<br>—<br>~~GO GO~~<br>~~GO~~<br>~~GOGO~~|0.8<br>1.2<br>~~GO ~~<br>~~GO~~<br>~~GO~~|V<br> ~~(OG~~<br>~~GO~~<br>~~(OG~~|VGS= 0V,IS= 10A<br>~~(OG~~<br>~~GO~~<br>~~(OG~~|
|**DYNAMIC CHARACTERISTICS(Note 8)**<br>~~GO GO (OG~~<br>~~PT~~|||||
|Input Capacitance<br>~~GG~~|Ciss<br>—<br>~~GG~~|2425<br>—<br>~~GG~~|pF<br>~~GG~~<br>~~GG~~<br>~~GG~~|VDS= 10V, VGS= 0V,<br>f = 1.0MHz|
|Output Capacitance<br>~~GG~~|Coss<br>—<br>~~GG~~|396<br>—<br>~~GG~~|||
|Reverse Transfer Capacitance<br>~~GG~~|Crss<br>—<br>~~GG~~|375<br>—<br>~~GG~~|||
|Gate Resistance<br>~~PT~~|Rg<br>—<br>~~PT~~|1.1<br>—<br>~~PT~~|Ω<br>~~PT~~|VDS= 0V,VGS= 0V,f = 1MHz<br>~~PT~~|
|Total Gate Charge(VGS= 8V)<br>~~GO~~|Qg<br>—<br>~~GO~~|50.6<br>—<br>~~GO~~|nC<br>~~GO~~<br>~~GG~~<br>~~GG~~<br>~~a~~|VDS= 4V, ID= 10A|
|Total Gate Charge(VGS= 4.5V)<br>~~GG~~|Qg<br>—<br>~~GG~~|27.3<br>—<br>~~GG~~|||
|Gate-Source Charge<br>~~GG~~|Qgs<br>—<br>~~GG~~|3.4<br>—<br>~~GG~~|||
|Gate-Drain Charge<br>~~a~~|Qgd<br>—<br>~~a~~|5.2<br>—<br>~~a~~|||
|Turn-On DelayTime<br>~~GO~~|tD(ON)<br>—<br>~~GO~~|7.6<br>—<br>~~GO~~|ns<br>~~GO~~<br>~~GG~~<br>~~GG~~|VDD= 4V, VGS= 5V, ID= 10A<br>RG= 1Ω, RL= 0.4Ω|
|Turn-On Rise Time<br>~~GG~~|tR<br>—<br>~~GG~~|22.2<br>—<br>~~GG~~|||
|Turn-Off DelayTime<br>~~GG~~<br>~~a~~|tD(OFF)<br>—<br>~~GG~~|57.6<br>—<br>~~GG~~|||
|Turn-Off Fall Time<br>~~a~~|tF<br>—|16.8<br>—|||



Notes: 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. 

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DMN1019UFDE Datasheet number: DS35561 Rev. 7 - 2 

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**DMN1019UFDE** 

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302520 Phoi}| Vag—_— = 3.0V 302520 VDS = 5.0V eepe|<br>._/ Ves = 2.5V |<br>15 fe. Ves =20V 15 |<br>TTAA = 150°C  = 150癈<br>10 Porpo 10 || TT AA  = 125°C  = 125癈 [| Ho<br>5 5 TT AA  = 85= 85癈°C<br>TTAA = 25 = 25°C 癈<br>0 0 TTAA = -55°C  = -55癈<br>0 0.5 1.0 1.5 2.0 0 0.4 0.8 1.2 1.6 2.0<br>VDS, DRAIN-SOURCE VOLTAGE (V) VVGSGS, GATE-SOURCE VOLTAGE (V) , GATE-SOURCE VOLTAGE<br>Fig. 4 Typical Output Characteristic Fig. 5 Typical Transfer Characteristics<br>ed ee ee ee 0.020 PTT<br>0.016<br>2 TT Ty Ty<br>| | | [| [ if iti<br>SFE oe<br>eT ft i tt dt<br>0.012 ID = 9.7A<br>I D = 4.5A<br>Sow Pe | Py<br>0.008<br>Bo_ er Xfft<br>ieanni 0.004 reoo<br>2 PEEL,<br>Pte| 0<br>0 5 |10 15| 20| |25 430 0 FEEELELELELE, 1 2 3 4 5 6 7 8<br>Ip: DRAIN-SOURCE CURRENT (A)  VGS, GATE VOLTAGE (V)<br>Fig. 6 Typical On-Resistance vs. Fig. 7 Typical On-Resistance vs. Gate Voltage<br>Drain Current and Gate Voltage<br>0.020 2.0<br>VGS= 4.5V<br>1.8<br>0.016 oe PF ft tl<br>eea 1.6 PEELE<br>VGS = 4.5V<br>0.012 ee ee TTAA = 150°C  = 150癈 1.4 PT] ff ID = 5A fy<br>TTAA = 125°C  = 125癈<br>0.008 TTAA = 85°C  = 85癈 1.2<br>——_—— TTAA = 25°C  = 25癈 a VIGSD = 10A  10= V<br>SSS 3 1.0 a> <a<br>0.004 TTAA = -55°C  = -55癈<br>oe ee 0.8 =<br>ee A<br>0 ee 0.6 Pi]<br>| tld<br>0 5 10 15 20 25 30 50 -25 0 25 50 75 100 125 150<br>ID, DRAIN CURRENT (A)  TJ, JUNCTION TEMPERATURE (C)<br>Fig. 8 Typical On-Resistance vs.  Fig. 9 On-Resistance Variation with Temperature<br>Drain Current and Temperature<br>D<br>, DRAIN CURRENT (A)<br> I<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>, DRAIN CURRENT (A)<br>D<br> I<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>DS(ON)<br>, DRAIN-SOURCE<br>R<br>ON-RESISTANCE (NORMALIZED)<br>**----- End of picture text -----**<br>


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DMN1019UFDE Datasheet number: DS35561 Rev. 7 - 2 

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**DMN1019UFDE** 

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0.020 1.2<br>1.0<br>0.016<br>TTT = 0—ET<br>0.8<br>0.012 PP yy VGS = 4.5V BEREEEEE<br>ID = 5A<br>0.6<br>ID = 1mA<br>0.008<br>eet VIGSD = 10A  10= V |  PPR 0.4 II DD  = 250μA = 250礎<br>0.004<br>aesaTiitt.| 0.2 RS=f ys<br>0 0<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>FLT TJ, JUNCTION TEMPERATURE ( ETEE) C) = A TJ, JUNCTION TEMPERATURE ( EET rT C)<br>Fig. 10 On-Resistance Variation with Temperature Fig. 11 Gate Threshold Variation vs. Junction Temperature Fig. 11 Gate Threshold Variation vs. Ambient Temperature<br>30 10,000<br>f = 1MHz<br>25<br>20 coos ====== C iss<br>15 TTA A  = 25°C = 25癈 1,000<br>C oss<br>10<br>Crss<br>5 co ==<br>0 100<br>0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 12<br>EEA Pitt tt<br>VSD, SOURCE-DRAIN VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig.12 Diode Forward Voltage vs. Current Fig. 13 Typical Junction Capacitance<br>8 VA<br>6 V I DVIDDS  = 10A  DS  -10= = 4V = -4VA<br>4 nnn<br>ail<br>2<br>AL<br>0 A<br>0 5 10 15 20 25 30 35 40 45 50<br>Qg [, TOTAL GATE CHARGE ]  (nC)<br>Fig. 14 Gate Charge<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(TH)<br>V<br>, GATE-SOURCE VOLTAGE (V)<br>GS<br>V<br>, SOURCE CURRENT (V)<br>IS<br>DS(ON)<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br> GATE THRESHOLD VOLTAGE (V)<br>GS<br>V<br>T<br>, JUNCTION CAPACITANCE (pF)<br>C<br>GS(th)<br>, GATE THRESHOLD VOLTAGE (V)<br>V<br>**----- End of picture text -----**<br>


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DMN1019UFDE Datasheet number: DS35561 Rev. 7 - 2 

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**DMN1019UFDE** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **U-DFN2020-6 (Type E)** 

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A3<br>A1<br>A<br>D<br>b1 K1<br>D2<br>E E2 L 1<br>L(2X)<br>K2<br>ria 7<br>Z(4X) e b(6X)<br>**----- End of picture text -----**<br>


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U-DFN2020-6<br>— Type E<br>Dim  Min  Max  Typ<br>A  0.57  0.63 0.60<br>A1  0 0.05 0.03<br>A3    0.15<br>b 0.25 0.35 0.30<br>b1  0.185 0.285 0.235<br>D  1.95 2.05 2.00<br>D2  0.85 1.05 0.95<br>E  1.95 2.05 2.00<br>E2  1.40 1.60 1.50<br> e    0.65<br>L  0.25 0.35 0.30<br>L1  0.82  0.92  0.87<br>=== K1    0.305<br>K2    0.225<br>Z    0.20<br>a a ee<br>All Dimensions in mm<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**U-DFN2020-6 (Type E)** 

**==> picture [146 x 136] intentionally omitted <==**

**----- Start of picture text -----**<br>
i X2 a<br>Y3 Y2 Y1<br>X1<br>| =<br>X(6x) UU C Y (2x)<br>**----- End of picture text -----**<br>


**==> picture [119 x 135] intentionally omitted <==**

**----- Start of picture text -----**<br>
Value<br>Dimensions<br>(in mm)<br>C  0.650<br>X  0.400<br>yy X1  0.285<br>X2  1.050<br>Y  0.500<br>Y1  0.920<br>—— Y2  1.600<br>Y3 2.300<br>oo<br>**----- End of picture text -----**<br>


7 of 8 **www.diodes.com** 

DMN1019UFDE Datasheet number: DS35561 Rev. 7 - 2 

September 2020 © Diodes Incorporated 

**DMN1019UFDE** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

- B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2020, Diodes Incorporated 

**www.diodes.com** 

8 of 8 **www.diodes.com** 

DMN1019UFDE Datasheet number: DS35561 Rev. 7 - 2 

September 2020 © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/DMN1019UFDE-7/power-mosfet-n-channel-12-v-11-a-7000-ohm-u)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/dmn1019ufde-7/mosfet-n-ch-12v-11a-u-dfn2020/dp/3680116)
---

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