# Power MOSFET, N Channel, 30 V, 10.5 A, 7000 µohm, PowerDI 3333, Surface Mount

![Product image](https://novapart.co/image/farnell:3127322/)

**URL**: https://novapart.co/products/DMG7430LFG-7/power-mosfet-n-channel-30-v-105-a-7000-ohm-powerdi
**SKU**: DMG7430LFG-7
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.1000
**Stock**: 1000+
**Lead Time**: 106 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:10.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.007ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 900mW |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | PowerDI 3333 |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 10.5A |
| Drain Source On State Resistance | 7000µohm |
| Gate Source Threshold Voltage Max | 2.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3127322/)

**DMG7430LFG** — **N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI**[®] 

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## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|
||||
|**V(BR)DSS**|**RDS(ON) max**|**ID max**<br>**TA = 25°C**|
|30V|11mΩ @ VGS= 10V|10.5A|
||15mΩ @ VGS= 4.5V|9.2A|



## **Features and Benefits** 

- Low RDS(ON) – ensures on state losses are minimized 

- Small form factor thermally efficient package enables higher density end products 

- Occupies just 33% of the board area occupied by SO-8 enabling smaller end product 

- **" Green” component and RoHS compliant (Note 1)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

## **Description and Applications** 

This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. 

## **Mechanical Data** 

   - ® 

   - • Case: POWERDI 3333-8 

   - Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 

   - Moisture Sensitivity: Level 1 per J-STD-020 

- Backlighting 

- Power Management Functions 

- DC-DC Converters 

- Terminal Connections Indicator: See diagram 

- Terminals: Finish ⎯ NiPdAu over Copper leadframe. Solderable per MIL-STD-202, Method 208 

- Weight: 0.072 grams (approximate) 

®3333-8 

POWERDI 

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1 8<br>2 7<br>3 6<br>4 5<br>Top View<br>Internal Schematic<br>**----- End of picture text -----**<br>


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S Pin 1<br>S<br>S<br>G 2 7<br>3 6<br>D<br>D D 4 5<br>D<br>Top View<br>Bottom View  Top View  Internal Schematic<br> Information (Note 2)<br>Part Number Case Packaging<br>DMG7430LFG-7  POWERDI®3333-8 2000/Tape & Reel<br>DMG7430LFG-13  POWERDI®3333-8 3000/Tape & Reel<br>1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2). All applicable RoHS exemptions applied.<br>2. For packaging details, go to our website at http://www.diodes.com.<br> Information<br>G73 = Product Type Marking Code<br>YYWW = Date Code Marking<br>YY = Last digit of year (ex: 11 = 2011)<br>G73 WW = Week code (01 ~ 53)<br>.<br>YYWW<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 2) 

Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2). All applicable RoHS exemptions applied. 2. For packaging details, go to our website at http://www.diodes.com. 

## **Marking Information** 

POWERDI is a registered trademark of Diodes Incorporated DMG7430LFG Document number: DS35497  Rev. 5 - 2 

1 of 7 **www.diodes.com** 

February 2012 © Diodes Incorporated 

**DMG7430LFG** 

## **Maximum Ratings** @TA = 25°C unless otherwise specified 

|**Maximum Ratingsgss **@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratingsgss **@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratingsgss **@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified||||
|---|---|---|---|---|---|
|**Characteristic**|||**Symbol **|**Value**|**Units**|
|Drain-Source Voltage|||VDSS|30|V|
|Gate-Source Voltage|||VGSS|±20|V|
|Continuous Drain Current (Note 4) VGS= 10V|Steady<br>State|TA= 25°C<br>TA= 70°C|ID|10.5<br>8.5|A|
||t<10s|TA= 25°C<br>TA= 70°C|ID|14<br>11|A|
|Pulsed Drain Current(10μspulse,dutycycle = 1%)|||IDM|90|A|
|Maximum Continuous BodyDiode Forward Current(Note 4)|||IS|3.0|A|
|Avalanche Current(Note 5)L = 0.1mH|||IAR|22|A|
|Repetitive Avalanche Energy (Note 5)L = 0.1mH|||EAR|24|mJ|



## **Thermal Characteristics** @TA = 25°C unless otherwise specified 

|**Thermal Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Thermal Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Thermal Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Thermal Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Thermal Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|
|---|---|---|---|---|
||||||
|**Characteristic**||**Symbol**|**Value**|**Units**|
|Total Power Dissipation (Note 3)|Steady state<br>t<10s|PD|0.9|W|
||||1.5||
|Thermal Resistance, Junction to Ambient (Note 3)|Steady state<br>t<10s|RθJA|142|°C/W|
||||78||
|Total Power Dissipation (Note 4)|Steadystate<br>t<10s|PD|2.2|W|
||||3.5||
|Thermal Resistance, Junction to Ambient (Note 4)|Steady state<br>t<10s|RθJA|59|°C/W|
||||33||
|Thermal Resistance,Junction to Case(Note 4)||RθJC|11||
|Operatingand Storage Temperature Range||TJ,TSTG|-55 to +150|°C|



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100 100<br>9080 a Single Pulse R R θ θ JA JA(t)  = 140  = r(t) °C/W*  RθJA | PoeLTpaneeeEAHel| TT RLimitedDS(on) AseHHeeeLtWANTATT QRNNNSSENETTTNANUTTINTT PW = 10 ETTtt µs joan[Thy{]]<br>| TJ - TA = P * RθJA(t) 10 PTT TIKESTTT!<br>ANN<br>70 ee ee ee ee, eeOfDE) ee eeRe<br>60 CLAN LAM ETAT ETI AL pOPgaNOTONINNTON DC NSNINA4BX IN NTP TANTNET(eSNTEl<br>PW = 10s }<br>50 STEN ETE II 1  ONINSSOALat PW = RAINS  1s ONTO<br>a ee PW = 100ms TST SANGIN TONNE<br>40 \ reee | P W  = 10ms NCP NI  NUIAT NINANEE)| ITTHBG<br>30 \ CT ETT P W  = 1ms YABaa<br>0.1 P W = 100µs<br>20 \ FEEEE EOE<br>\ \ T ,J(max)= 25°C= 150°C PNET)PPTaeeyy NN HRI<br>10 SUI A a<br>0 Cm CETea 0.01 Sree rose CELUI CTE CII<br>0.0001 0.001 0.01 0.1 1 10 100 1,000 0.01 0.1 1 10 100<br>t1, PULSE DURATION TIME (sec) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 1 Single Pulse Maximum Power Dissipation Fig. 2 SOA, Safe Operation Area<br>, DRAIN CURRENT (A)<br>ID<br>, PEAK TRANSIENT POIWER (W)<br>(PK)<br>P<br>**----- End of picture text -----**<br>


POWERDI is a registered trademark of Diodes Incorporated DMG7430LFG Document number: DS35497  Rev. 5 - 2 

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February 2012 © Diodes Incorporated 

**DMG7430LFG** 

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1 D = 0.9<br>ere D = 0.7 eee ee eee ee eR ee<br>D = 0.5 Cote<br>Peer rrr<br>D = 0.3<br>CTT CTC CTT<br>TTT LIE, | errr ET TTT TTT<br>0.1 LTTEbe D = 0.1 Pa| UTIee TT7ceerreo|LATEee TIE|oeLUI<br>LE i te<br>D = 0.05 Cot eg et ee<br>Roa<br>D = 0.02<br>CSA PEE<br>0.01 FO| D = 0.01 Se OPTIMUMee ee TIEee LATTEee TIMEee LUI<br>aEE<br>re D = 0.005 Hitt} TT240PAT TT TT R θJA(t)  = r (t) * R θJA  TTTPUTT<br>RθJA = 140°C/W<br>D = Single Pulse Duty Cycle, D = t1/t2<br>0.001 See e<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000<br>t1, PULSE DURATION TIME (sec)<br>Fig. 3 Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


**Electrical Characteristics** TA = 25°C unless otherwise specified 

|**Electrical Characteristics **TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics **TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics **TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics **TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics **TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics **TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics **TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic **<br>~~RQ~~|**Symbol **<br>~~RQ~~<br>~~(CO~~|**Min**<br>~~RQ~~<br>~~(CO~~|**Typ **<br>~~RQ~~<br>~~(CO~~|**Max **<br>~~RQ~~<br>~~(QO~~|**Unit **<br>~~RQ~~<br>~~(QO~~|**Test Condition **<br>~~RQ~~<br>~~(~~|
|**OFFCHARACTERISTICS (Note 6) **<br>~~(CO~~<br>~~(QO (~~<br>~~|~~<br>~~GQ~~<br>~~(QO~~|||||||
|Drain-Source Breakdown Voltage<br>~~QQ~~<br>~~(QO~~<br>~~a~~|BVDSS<br>~~QQ~~<br>~~(QO~~|30<br>~~QQ~~<br>~~(QO~~|-<br>~~QQ~~<br>~~(QO~~|-<br>~~QQ~~<br>~~GQ~~<br>~~(S(O~~|V<br>~~QQ~~<br>~~GQ~~<br>~~(S(O~~|VGS= 0V,ID= 250μA<br>~~QQ~~<br>~~(S(O~~|
|Zero Gate Voltage Drain Current<br>~~(QO~~<br>~~a~~<br>~~QQ~~|IDSS<br>~~(QO~~<br>~~QQ~~|-<br>~~(QO~~<br>~~QQ~~<br>~~QO~~|-<br>~~(QO~~<br>~~QO~~|1<br>~~GQ~~<br>~~(S(O~~<br>~~(QO~~|μA<br>~~GQ~~<br>~~(S(O~~<br>~~(QO~~|VDS= 30V,VGS= 0V<br>~~(S(O~~<br>~~Qe~~|
|Gate-Source Leakage<br>~~(QO~~<br>~~a~~<br>~~QQ~~|IGSS<br>~~(QO~~<br>~~QQ~~|-<br>~~(QO~~<br>~~QQ~~<br>~~QO~~|-<br>~~(QO ~~<br>~~QO~~|±100<br>~~GQ~~<br> ~~(S(O~~<br>~~(QO~~|nA<br>~~GQ~~<br>~~(S(O~~<br>~~(QO~~|VGS= ±20V,VDS= 0V<br>~~(S(O~~<br>~~Qe~~|
|**ON CHARACTERISTICS(Note 6) **<br>~~QQ~~<br>~~QO~~<br>~~(QO Qe~~<br>~~|~~<br>~~GO(OO~~|||||||
|Gate Threshold Voltage<br>~~(QO~~|VGS(th)<br>~~(QO~~|1.4<br>~~(QO~~<br>~~ee~~|-<br>~~(QO~~<br>~~ee~~|2.5<br>~~(QO~~<br>~~GO~~<br>~~ee~~|V<br>~~(QO~~<br>~~(OO~~|VDS= VGS,ID= 250μA<br>~~(QO~~<br>~~(OO~~|
|Static Drain-Source On-Resistance<br>~~ee~~|RDS (ON)<br>~~ee~~<br>~~a~~|-<br>~~ee~~<br>~~ee~~<br>~~a~~|7<br>~~ee~~<br>~~ee~~<br>~~ee~~|11<br>~~GO ~~<br>~~ee~~<br>~~ee~~|mΩ<br> ~~(OO~~<br>~~ee~~|VGS= 10V,ID= 20A<br>VGS= 4.5V,ID= 20A<br>~~(OO~~<br>~~ee~~<br>~~PO~~|
|||-<br>~~ee~~<br>~~ee~~<br>~~a~~|11<br>~~ee~~<br>~~ee~~<br>~~ee~~|15<br>~~ee~~<br>~~ee~~|||
|Forward Transfer Admittance<br>~~QQ~~||Yfs|<br>~~a~~<br>~~QQ~~|-<br>~~ee~~<br>~~a~~<br>~~QQ~~<br>~~GO~~|74<br>~~ee~~<br>~~ee~~<br>~~QQ ~~<br>~~GO~~|-<br>~~ee~~<br> ~~(QO~~<br>~~GO~~|S<br>~~(QO~~<br>~~(OQ~~|VDS= 5V,ID= 20A<br>~~PO~~<br>~~(QO~~<br>~~(OQ~~|
|Diode Forward Voltage<br>~~RD~~|VSD<br>~~RD~~|-<br>~~ee~~<br>~~RD~~<br>~~GO~~|0.75<br>~~ee~~<br>~~RD~~<br>~~GO~~|1.0<br>~~ee~~<br>~~RD~~<br>~~GO~~|V<br>~~RD~~<br>~~(OQ~~|VGS= 0V,IS= 1A<br>~~RD~~<br>~~(OQ~~|
|**DYNAMIC CHARACTERISTICS  (Note 7)**<br>~~GO~~<br>~~GO (OQ~~<br>~~a~~|||||||
|Input Capacitance<br>~~a~~<br>~~a~~|Ciss<br>|-<br>|1281<br>|-<br>|pF<br>|VDS= 15V, VGS= 0V,<br>f = 1.0MHz<br>~~I~~<br>~~Oe~~<br>|
|Output Capacitance<br>~~a~~<br>~~a~~|Coss<br>|-<br>|145<br>|-<br>|pF<br>||
|Reverse Transfer Capacitance<br>~~aI~~<br>~~a~~|Crss<br>~~I~~<br>~~QQ~~<br>|-<br>~~I~~<br>~~QQ~~<br>|125<br>~~I~~<br>~~QQ~~<br>|-<br>~~I~~<br>~~QQ~~<br>|pF<br>~~I~~<br>~~QQ~~<br>||
|Gate resistance<br>~~a~~<br>~~a~~|Rg<br>~~a~~<br>~~QQ~~<br>|-<br>~~a~~<br>~~QQ~~<br>|1.2<br>~~a~~<br>~~QQ~~<br>|-<br>~~a~~<br>~~QQ~~<br>|Ω<br>~~a~~<br>~~QQ~~<br>|VDS= 0V,VGS= 0V,f = 1.0MHz<br>~~a~~<br>~~Oe~~<br>|
|Total Gate Charge(VGS= 4.5V)<br>~~a~~|Qg<br>~~QQ~~<br>|-<br>~~QQ~~<br>|12.5<br>~~QQ~~<br>|-<br>~~QQ~~<br>|nC<br>~~QQ~~<br>|VDS= 15V, ID= 12A<br> ~~Oe~~<br>~~I~~<br>~~a~~<br>~~RQ~~|
|Total Gate Charge(VGS= 10V)<br>~~aI~~|Qg<br>~~QQ~~<br>~~I~~|-<br>~~QQ~~<br>~~I~~|26.7<br>~~QQ ~~<br>~~I~~|-<br> ~~QQ~~<br>~~I~~|nC<br>~~QQ ~~<br>~~I~~||
|Gate-Source Charge<br>~~a~~|Qgs<br>~~a~~|-<br>~~a~~|3.6<br>~~a~~|-<br>~~a~~|nC<br>~~a~~||
|Gate-Drain Charge<br>~~RQ~~|Qgd<br>~~RQ~~|-<br>~~RQ~~|4.4<br>~~RQ~~|-<br>~~RQ~~|nC<br>~~RQ~~||
|Turn-On DelayTime<br>~~GG~~|tD(on)<br>~~GG~~|-<br>~~GG~~|5.2<br>~~GG~~|-<br>~~GG~~|ns<br>~~GG~~|VDD= 15V, VGS= 10V,<br>RL= 1.25Ω, RG= 3Ω,<br>~~GG~~<br>~~I~~<br>~~a~~<br>~~RQ~~|
|Turn-On Rise Time<br>~~I~~|tr<br>~~I~~|-<br>~~I~~|21.2<br>~~I~~|-<br>~~I~~|ns<br>~~I~~||
|Turn-Off DelayTime<br>~~a~~|tD(off)<br>~~a~~|-<br>~~a~~|22.3<br>~~a~~|-<br>~~a~~|ns<br>~~a~~||
|Turn-Off Fall Time<br>~~RQ~~|tf<br>~~RQ~~|-<br>~~RQ~~|5.1<br>~~RQ~~|-<br>~~RQ~~|ns<br>~~RQ~~||
|Reverse RecoveryTime<br>~~QQ~~<br>~~ee~~|Trr<br>~~QQ~~<br>~~ld~~|-<br>~~QQ~~<br>~~ld~~|8.5<br>~~QQ ~~<br>~~ld~~|-<br> ~~(QO~~<br>~~ld~~|ns<br>~~(QO~~|IF= 12A,di/dt = 500A/μs<br>~~(QO~~|
|Reverse RecoveryCharge<br>~~ee~~<br>~~rrrrrrrr—eesesesa‘(‘ile~~|Qrr<br>~~rrrrrrrr—eesesesa‘(‘ile~~<br>~~ld~~|-<br>~~rrrrrrrr—eesesesa‘(‘ile~~<br>~~ld~~|7.0<br>~~rrrrrrrr—eesesesa‘(‘ile~~<br>~~ld~~|-<br>~~rrrrrrrr—eesesesa‘(‘ile~~<br>~~ld~~|nC<br>~~rrrrrrrr—eesesesa‘(‘ile~~|IF= 12A,di/dt = 500A/μs<br>~~rrrrrrrr—eesesesa‘(‘ile~~|



Notes: 3. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 

4. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 

5. IAR and EAR rating are based on low frequency and duty cycles to keep TJ = 25°C 

6. Short duration pulse test used to minimize self-heating effect. 

7. Guaranteed by design. Not subject to product testing. 

POWERDI is a registered trademark of Diodes Incorporated 

3 of 7 **www.diodes.com** 

DMG7430LFG Document number: DS35497  Rev. 5 - 2 

February 2012 © Diodes Incorporated 

**DMG7430LFG** 

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30 30<br>VDS = 5.0V<br>25 25 V DS = 5.0V<br>20 7 An 20 yp<br>TA = 125°C<br>15 fo 15 on on<br>TA = 150°C<br>10 fp 10 4<br>5 | A/a 5 TA = 85°C<br>TA = 25°C<br>TA = -55°C<br>0 Po 0<br>0 0.5 1.0 1.5 2.0 1.0 1.5 2.0 2.5 3.0 3.5 4.0<br>VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE<br>Fig.4 Typical Output Characteristic Fig. 5 Typical Transfer Characteristics<br>0.040.03 0.040.03 EEE<br>0.02 0.02 I D = 20A<br>0.01 V GS = 4.5V 0.01 eeeee ID = 10A<br>VGS = 10V<br>0 0 —LEE<br>0 5 10 15 20 25 30 3 4 5 6 7 8 9 10<br>ID, DRAIN-SOURCE CURRENT VGS, GATE VOLTAGE (V)<br>Fig. 6 Typical On-Resistance vs.  Fig. 7 Typical On-Resistance vs. Gate Voltage<br>Drain Current and Gate Voltage<br>0.03 1.8<br>VGS= 4.5V<br>TTLELLLL<br>1.6<br>VGS  10= V<br>ID = 20A<br>0.02 TA = 150°C 1.4 —<br>TA = 125°C<br>TA = 85°C 1.2 VGS = 4.5V<br>ID = 10A<br>TA = 25°C<br>c n E Eed aT<br>0.01 1.0<br>TA = -55°C<br>0 0.80.6 Se PT annnneCEE<br>0 5 10 15 20 25 30 50 -25 0 25 50 75 100 125 150<br>ID, DRAIN CURRENT TJ, JUNCTION TEMPERATURE (°C)<br>Fig. 8 Typical On-Resistance vs.  Fig. 9 On-Resistance Variation with Temperature<br>Drain Current and Temperature<br>, DRAIN CURRENT (A)<br>D , DRAIN CURRENT (A)<br> I D<br> I<br>)Ω )Ω<br>, DRAIN-SOURCE ON-RESISTANCE ( , DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON) DS(ON)<br>R R<br>)Ω<br>, DRAIN-SOURCE<br>DS(ON)<br>R<br>, DRAIN-SOURCE ON-RESISTANCE ( ON-RESISTANCE (NORMALIZED)<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


POWERDI is a registered trademark of Diodes Incorporated DMG7430LFG Document number: DS35497  Rev. 5 - 2 

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**www.diodes.com** 

**DMG7430LFG** 

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0.03 2.5<br>2.0<br>tity<br>0.02 VGS = 4.5V ID = 1mA<br>ID = 10A 1.5<br>SS ID = 250µA<br>1.0 oS<br>0.01 V GS   10= V<br>ID = 20A<br>LEEPER<br>0 0.50 eT EELEEL<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)<br>Fig. 10 On-Resistance Variation with Temperature Fig. 11 Gate Threshold Variation vs. Ambient Temperature<br>30 2,000<br>1,800 f = 1MHz<br>25 [| | te tt<br>1,600<br>CCC 1,400 —<br>20<br>1,200 C iss<br>15 ce TA = 25°C 1,000 Nannee<br>800<br>fe Tate<br>10<br>COA 600 EE<br>400<br>5<br>| tg aa Coss<br>200<br>0 0 Crss<br>P| | LA ee<br>0 0.2 0.4 0.6 0.8 1.0 1.2 0 5 10 15 20 25 30<br>VSD, SOURCE-DRAIN VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig.12 Diode Forward Voltage vs. Current Fig. 13 Typical Junction Capacitance<br>10,000 Seeeeeenee 109 a<br>T A  = 150°C 8 V I DDS   12= = 15V A<br>1,000<br>aan SEE<br>7<br>a T A  = 125°C 6 TZ<br>100 5<br>Pf ft tf dt tT | | | * | |<br>4<br>TA = 85°C<br>=== = 3 $$<br>10 SS TA = 25°C 2 544+4-<br>1<br>1 —————i 0 ft,Vt | | tj ft ft {|<br>0 10 20 30 40 50 60 70 80 90 100 0 5 10 15 20 25 30<br>VDS, DRAIN-SOURCE VOLTAGE (V) Qg [, TOTAL GATE CHARGE ]  (nC)<br>Fig. 14 Typical Drain-Source Leakage Current vs. Voltage Fig. 15 Gate Charge<br>)Ω<br>, DRAIN-SOURCE ON-RESISTANCE ( , GATE THRESHOLD VOLTAGE (V)<br>GS(th)<br>V<br>DS(ON)<br>R<br>, SOURCE CURRENT (V)<br>IS , JUNCTION CAPACITANCE (pF)<br>T<br>C<br> GATE THRESHOLD VOLTAGE (V)<br>, DRAIN LEAKAGE CURRENT (nA) GS<br>IDSS V<br>**----- End of picture text -----**<br>


POWERDI is a registered trademark of Diodes Incorporated DMG7430LFG Document number: DS35497  Rev. 5 - 2 

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February 2012 © Diodes Incorporated 

**DMG7430LFG** 

## **Package Outline Dimensions** 

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**----- Start of picture text -----**<br>
A POWERDI ® 3333-8<br>A3 Dim Min  Max  Typ<br>5 A1 D  3.25 3.35 3.30<br>D E  3.25 3.35 3.30<br>D2 D2  2.22 2.32  2.27<br>E2  1.56 1.66 1.61<br>L<br>(4x) A  0.75 0.85 0.80<br>Pin 1 ID 1 4 A1  0 0.05 0.02<br>A3  − − 0.203<br>b2 b 0.27 0.37  0.32<br>E<br>(4x) b2  − − 0.20<br>E2<br>L  0.35 0.45 0.40<br>8 5 L1  −  −  0.39<br>L1<br>e  − − 0.65<br>(3x)<br>Z  − − 0.515<br>Z (4x) e b (8x) All Dimensions in mm<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

**==> picture [298 x 128] intentionally omitted <==**

**----- Start of picture text -----**<br>
X<br>G<br>Dimensions Value (in mm)<br>C 0.650<br>8 5 G 0.230<br>Y2 G1 G1  0.420<br>Y1<br>Y  3.700<br>Y Y1  2.250<br>Y2  1.850<br>1 4 Y3 0.700<br>X  2.370<br>Y3<br>X2  0.420<br>00 1<br>X2 C<br>**----- End of picture text -----**<br>


POWERDI is a registered trademark of Diodes Incorporated DMG7430LFG Document number: DS35497  Rev. 5 - 2 

6 of 7 **www.diodes.com** 

February 2012 © Diodes Incorporated 

## **DMG7430LFG** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending.  Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

## **LIFE SUPPORT** 

- Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A.   Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.  A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2012, Diodes Incorporated **www.diodes.com** 

POWERDI is a registered trademark of Diodes Incorporated DMG7430LFG Document number: DS35497  Rev. 5 - 2 

7 of 7 **www.diodes.com** 

February 2012 © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/DMG7430LFG-7/power-mosfet-n-channel-30-v-105-a-7000-ohm-powerdi)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/dmg7430lfg-7/mosfet-n-ch-30v-10-5a-powerdi3333/dp/3127322)
---

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