# Power MOSFET, N Channel, 20 V, 6.5 A, 0.021 ohm, SOT-23, Surface Mount

![Product image](https://novapart.co/image/farnell:3943500/)

**URL**: https://novapart.co/products/DMG6968UQ-7/power-mosfet-n-channel-20-v-65-a-0021-ohm-sot-23
**SKU**: DMG6968UQ-7
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.1040
**Stock**: 500+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | AEC-Q101 |
| Power Dissipation | 1.3W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 4.5V |
| Transistor Case Style | SOT-23 |
| Drain Source Voltage Vds | 20V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 6.5A |
| Drain Source On State Resistance | 0.021ohm |
| Gate Source Threshold Voltage Max | 900mV |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943500/)

**DMG6968UQ N-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

|**BVDSS**|**RDS(ON) Max**|**ID Max**<br>**TA = +25°C**|
|---|---|---|
|20V|25mΩ @ VGS= 4.5V|6.5A|



## **Features and Benefits** 

- Low On-Resistance 

- Low-Input Capacitance 

- Fast Switching Speed 

- **ESD Protected Gate** 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **The DMG6968UQ is suitable for automotive applications requiring specific change control and is AEC-Q101 qualified, is PPAP capable, and is manufactured in IATF16949:2016 certified facilities.** 

## **Description and Applications** 

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: 

## **Mechanical Data** 

   - Case: SOT23 

   - Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

   - Moisture Sensitivity: Level 1 per J-STD-020 

- Power-Management Functions 

- DC-DC Converters 

- Motor Control 

- Terminals: FinishMatte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 **e3** 

- Terminals Connections: See Diagram Below 

   - Weight: 0.009 grams (Approximate) 

 

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**----- Start of picture text -----**<br>
D<br>SOT23<br>D<br>G<br>G S<br>ESD-Protected Gate<br>B e OS<br>Top View  Gate Protection Diode S Top View Pin-out<br>Internal Schematic<br>g Information Information (Note 4)<br>Part Number Case Packaging<br>DMG6968UQ-7  SOT23 3000/Tape & Reel<br>**----- End of picture text -----**<br>


## **Ordering Information Information** (Note 4) 

- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and 

Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

2N4 = Product Type Marking Code **2N4 22K** YM = Date Code Marking Y or Y = Year (ex: G = 2019) M = Month (ex: 9 = September) Date Code Key **Year 2019 2020 2021 2022 2023 2024 2025 2026 Code** G H I J K L M N ~~a~~ **Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec** ~~ee~~ **Code** 1 2 3 4 5 6 7 8 9 O N D DMG6968UQ 1 of 6 August 2019 Document number: DS42175 Rev. 1 - 2 **www.diodes.com** © Diodes Incorporated 

**DMG6968UQ** 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|||||||
|---|---|---|---|---|---|
|**Characteristic**|||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage|||VDSS|20|V|
|Gate-Source Voltage|||VGSS|±12|V|
|Continuous Drain Current (Note 5)|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|6.5<br>5.2|A|
|Pulsed Drain Current|||IDM|30|A|



## **Thermal Characteristics** 

|**Thermal Characteristics**||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Power Dissipation (Note 5)|PD|1.3|W|
|Thermal Resistance, Junction to Ambient @ TA= +25°C|RθJA|157|°C/W|
|Operatingand Storage Temperature Range|TJ, TSTG|-55 to +150|°C|



## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**<br>~~(I~~|**Symbol**<br>~~(I~~|**Min**<br>~~(I~~<br>~~DD~~|**Typ**<br>~~(I~~<br>~~DD UD~~|**Max**<br>~~(I~~<br>~~UD~~|**Unit**<br>~~(I~~<br>~~NS~~|**Test Condition**<br>~~(I~~<br>~~(OO~~|
|**OFF CHARACTERISTICS(Note 6)**<br>~~DD UD~~<br>~~NS(OO~~<br>~~ee~~|||||||
|Drain-Source Breakdown Voltage<br>~~ee~~<br>~~PC~~|BVDSS<br>~~ee~~<br>~~—~~|20<br>~~ee~~|—<br>~~ee~~|—<br>~~ee~~|V<br>~~ee~~|VGS= 0V, ID= 250µA<br>~~ee~~|
|Zero Gate Voltage Drain Current                TJ= +25°C<br>~~PC~~|IDSS<br>~~—~~|—|—|1.0|µA|VDS= 20V, VGS= 0V|
|Gate-Source Leakage<br>~~PC~~|IGSS<br>~~—~~|—|—|±10|µA|VGS= ±10V, VDS= 0V|
|Gate-Source Breakdown Voltage<br>~~PC~~|BVGSS<br>~~—~~|±12|—|—|V|VDS= 0V, IG= ±250µA|
|**ON CHARACTERISTICS(Note 6)**<br>~~PC~~<br>~~—~~|||||||
|Gate Threshold Voltage<br>~~Pe~~|VGS(TH)<br>~~Pe~~|0.5<br>~~Pe~~|—<br>~~Pe~~|0.9<br>~~Pe~~|V<br>~~Pe~~|VDS= VGS, ID= 250µA<br>~~Pe~~|
|Static Drain-Source On-Resistance<br>~~eS~~|RDS(ON)<br>~~eS~~|—<br>~~eS~~|21<br>~~eS~~|25<br>~~eS~~|mΩ<br>~~eS~~|VGS= 4.5V, ID= 6.5A<br>~~eS~~|
||||23<br>~~eS~~|29<br>~~eS~~||VGS= 2.5V, ID= 5.5A<br>~~eS~~|
||||28<br>~~eS~~|36<br>~~eS~~||VGS= 1.8V, ID= 3.5A<br>~~eS~~|
|Forward Transfer Admittance||Yfs||—|8|—|S|VDS= 10V, ID= 5A|
|**DYNAMIC CHARACTERISTICS(Note 7)**<br>~~II~~|||||||
|Input Capacitance<br>~~(UN~~|Ciss<br>~~(UN~~<br>~~I~~|—<br>~~(UN~~<br>~~I~~<br>~~I~~|151<br>~~(UN~~<br>~~I~~|—<br>~~(UN~~<br>~~I~~|pF<br>~~(UN~~|VDS= 10V, VGS= 0V<br>f = 1.0MHz|
|Output Capacitance<br>~~nD~~|Coss<br>~~nD~~<br>~~I~~|—<br>~~I~~<br>~~nD~~<br>~~I~~|91<br>~~I ~~<br>~~nD~~|—<br> ~~I~~<br>~~nD~~|pF<br>~~nD~~||
|Reverse Transfer Capacitance<br>~~———~~|Crss<br>~~I~~<br>~~———~~|—<br>~~I~~|32|—|pF||
|Total Gate Charge<br>~~———~~|Qg<br>~~———~~|—|8.5|—|nC|VGS= 4.5V, VDS= 10V, ID= 6.5A<br>~~ee~~|
|Gate-Source Charge<br>~~———~~|Qgs<br>~~———~~|—|1.6|—|nC||
|Gate-Drain Charge<br>~~———~~<br>~~—<——~~|Qgd<br>~~———~~<br>~~—<——~~|—|2.8|—|nC<br>~~ee~~||
|Turn-On DelayTime<br>~~———~~<br>~~—<——~~|tD(ON)<br>~~———~~<br>~~—<——~~|—|54|—|ns<br>~~ee~~|VDD= 10V, VGS= 4.5V,<br>RL= 10Ω, RG= 6Ω, ID= 1A<br>~~ee~~|
|Turn-On Rise Time<br>~~———~~<br>~~—<——~~|tR<br>~~———~~<br>~~—<——~~|—|66|—|ns<br>~~ee~~||
|Turn-Off DelayTime<br>~~———~~<br>~~—<——~~|tD(OFF)<br>~~———~~<br>~~—<——~~|—|613|—|ns<br>~~ee~~||
|Turn-Off Fall Time<br>~~—<——~~|tF<br>~~—<——~~|—|205|—|ns<br>~~ee~~||



Notes: 5. Device mounted on 1”  1” FR-4 PCB with high-coverage 2oz copper, single sided. 6. Short duration pulse test used to minimize self-heating effect. 

7. Guaranteed by design. Not subject to product testing. 

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20 20<br>VGS = 10V V     = 5VDS<br>VGS = 4.5V<br>16 16<br>VGS = 3.0V<br>FT 3 — [E] [e]<br>VGS = 2.5V [A)] T [(]<br>12 VGS = 2.0V [N] E 12<br>R<br>VGS = 1.5V RU<br>Fo C<br>8 8<br>[IN] A<br>R<br>cot D om<br>,I D T   = 150°CA<br>4 4 T   = 125°CA T   = 85°CA<br>foo<br>T   = 25°CA<br>T   = -55°CA<br>0 PO 0<br>0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0.5 1 1.5 2<br>VDS, DRAIN-SOURCE VOLTAGE (V) V    , GATE-SOURCE VOLTAGE (V)GS<br>Fig. 1 Typical Output Characteristic Fig. 2 Typical Transfer Characteristic<br>0.04 ) 0.06<br>[(] E<br>C<br>[N] A 0.05 V     = 4.5VGS<br>0.03 V GS = 1.8V [SIST] E 0.04<br>- [R] T   = 150°CA<br>[N] O<br>V GS  = 2.5V CE 0.03 T   = 125°CA<br>R T   = 85°CA<br>VGS = 4.5V [U] O<br>0.02 - [S] 0.02 T   = 25°CA<br>[IN] A<br>R T   = -55°CA<br>D<br>, ) 0.01<br>( [ON] S<br>D<br>0.01 R 0<br>0 5 10 15 20 25 30 0 4 8 12 16 20<br>ID, DRAIN-SOURCE CURRENT (A) I  , DRAIN CURRENT (A)D<br>Fig. 3  Typical On-Resistance  Fig. 4 Typical On-Resistance<br>vs. Drain Current and Gate Voltage  vs. Drain Current and Temperature<br>1.6 0.06<br>VGS = 2.5V 0.05 ERRREEEE<br>1.4 ID = 5.5A<br>VGS = 4.5V 0.04 V GS  = 2.5V<br>1.2 I D = 6.5A ID = 5.5A<br>0.03 ae e<br>VGS = 4.5V<br>1.0 ID = 6.5A<br>0.02<br>ety| |<br>0.8<br>0.01 SERRE<br>0.6 0 Fit<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>T ty<br>TA, AMBIENT TEMPERATURE  ( 癈 °C ) TA, AMBIENT TEMPERATURE ( 癈 (°C))<br>Fig. 5 On-Resistance Variation with Temperature Fig. 6 On-Resistance Variation with Temperature<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>, DRAIN-SOURCE<br>R<br>ON-RESISTANCE (NORMALIZED)<br>DSON<br>)<br>, DRAIN-SOURCE<br>ON-RESISTANCE (<br>R<br>DSON<br>, DRAIN CURRENT (A)<br>ID<br>)<br><br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>)<br><br>, DRAIN-SOURCE<br>(NORMALIZED)<br>DS(ON) ON-RESISTANCE (<br>R<br>, DRAIN-SOURCE ON-RESISTANCE<br>DS(ON)<br>R<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


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1.4<br>) [V] (E 1.2<br>G<br>T [A]<br>LO 1.0<br>V<br>D<br>L<br>H [O] 0.8 —~_ I   = 250µAD<br>S<br>0.6<br>T [HRE]<br>T [E] G [A] 0.4 Lf I   = 1mAD [_—“— —__|= .<br>,<br>( [TH)] S 0.2<br>G cerrseReSS<br>V<br>0 Ft LLL EL<br>-50 -25 0 25 50 75 100 125 150<br>T  , AMBIENT TEMPERATURE (°C)A<br>Fig. 7 Gate Threshold Variation vs. Ambient Temperature<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(TH)<br>V<br>**----- End of picture text -----**<br>


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20<br>) 16 T   = 25°CA<br>N [T(A]<br>12<br>C [URRE]<br>8<br>O [URCE]<br>S en<br>S /<br>I [,]<br>4<br>EEE<br>0 a<br>0 0.2 0.4 0.6 0.8 1 1.2<br>V    , SOURCE-DRAIN VOLTAGE (V)SD<br>Fig. 8 Diode Forward Voltage vs. Current<br>100,000 —— a<br>)A 10,000 a<br>[[n]] (T T   = 150°CA<br>N<br>E = == S SS<br>R<br>R 1,000 = __ T   = 125°C ae A<br>U<br>C<br>==<br>G [[E]] ====== ==<br>A<br>K 100<br>AE a Or ee T   = 85°CAA —<br>L<br>,<br>I D [[SS]] 10 a<br>= e T   = -55°CAA ee T   = 25°CAA<br>ee<br>1 SF FOLFOTOSC*#*”d<br>0 2 4 6 8 10 12 14 16 18 20<br>V    , DRAIN-SOURCE VOLTAGE (V) DSDS<br>Fig. 10 Typical Leakage Current vs. Drain-Source Voltage<br>, SOURCE CURRENT (A)<br>IS<br>, LEAKAGE CURRENT (nA)<br>IDSSDSS<br>**----- End of picture text -----**<br>


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500 100,000<br>450<br>PF {| [| jf ft] —— a<br>f = 1MHz<br>400 PF | | fe A)A 10,000<br>[[n]] T(T A<br>350 N<br>a E = == S<br>R<br>300 NT R 1,000 = __ A<br>U<br>C<br>250 A ee ee ==<br>| G [[E]] ======<br>A<br>200 K 100<br>(we— EAE a Or T   = 85°CAA<br>150 C iss L<br>,<br>100 PME|| I D [[SS]] 10 a<br>Coss<br>50 a\ = e T   = -55°CAA T   = 25°CAA<br>—<br>0 ee Crss ee 1 SF<br>0 4 8 12 16 20 0 2 4 6 8 10 12 14<br>VDS, DRAIN-SOURCE VOLTAGE (V) V    , DRAIN-SOURCE VOLTAGE (V) DSDS<br>Fig. 9 Typical Total Capacitance<br>1<br>D = 0.7 fmm | em<br>HETIL D = 0.5  Ne OK HK<br>D = 0.3<br>0.1 SaanSee ealaL athLLINmmLEMEA att amanEET ETI<br>D = 0.1<br>D = 0.9<br>i D = 0.05 C TIE<br>ee<br>D = 0.02 RJA(t) = r(t) * RJA<br>RJA = 162162°C/W 癈 /W<br>HC AHHH Hite<br>0.01 cull VU Tn LIE LUIN EH AELT<br>D = 0.01<br>P(pk)<br>Lr | TE CE t1 ee<br>IIT D = 0.005 A 0 : t2 . aPEE]<br>TJ - TA = P * RJA(t)<br>D = Single Pulse Duty Cycle, D = t 1 /t 2<br>0.001<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000<br>t1, PULSE DURATION TIME (s)<br>Fig. 11 Transient Thermal Response<br>C, CAPACITANCE (pF) , LEAKAGE CURRENT (nA)<br>IDSSDSS<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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**DMG6968UQ** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **SOT23** 

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**----- Start of picture text -----**<br>
All 7°<br>H<br>GAUGE PLANE SOT23<br>0.25 Dim  Min  Max  Typ<br>K1 K J A  0.37  0.51  0.40<br>B  1.20  1.40  1.30<br>C  2.30 2.50 2.40<br>a D  0.89 1.03 0.915<br>A M<br>F  0.45 0.60 0.535<br>ee T L L IP L1 a G  1.78  2.05  1.83<br>H  2.80  3.00  2.90<br>J  0.013  0.10  0.05<br>K  0.890  1.00  0.975<br>C B K1  0.903  1.10  1.025<br>L  0.45  0.61  0.55<br>== es ———<br>L1  0.25  0.55  0.40<br>M  0.085 0.150  0.110<br>ooo D === a  0°  8°  --<br>F G = All Dimensions in mm<br>Ls —<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**SOT23** 

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**----- Start of picture text -----**<br>
Y<br>Y1 Fig C<br>A oe<br>PI X X1<br>**----- End of picture text -----**<br>


|**Dimensions**|**Value(in mm)**|
|---|---|
|**C**|**()**<br>2.0|
|**X**|0.8|
|**X**<br>**X1**|0.8<br>1.35|
|**Y**|0.9|
|**Y1**|2.9|



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## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2019, Diodes Incorporated 

**www.diodes.com** 

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## Links

- [View this product on Novapart](https://novapart.co/products/DMG6968UQ-7/power-mosfet-n-channel-20-v-65-a-0021-ohm-sot-23)
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- [Supplier page](https://es.farnell.com/diodes-inc/dmg6968uq-7/mosfet-n-ch-20v-6-5a-sot-23/dp/3943500)
---

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