# Power MOSFET, N Channel, 20 V, 6.5 A, 0.025 ohm, SOT-23, Surface Mount

![Product image](https://novapart.co/image/farnell:1843757RL/)

**URL**: https://novapart.co/products/DMG6968U-7/power-mosfet-n-channel-20-v-65-a-0025-ohm-sot-23
**SKU**: DMG6968U-7
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.1150
**Stock**: 100+
**Lead Time**: 78 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:6.5A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.021ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:500mV; Powe

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 1.3W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 4.5V |
| Transistor Case Style | SOT-23 |
| Drain Source Voltage Vds | 20V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 6.5A |
| Drain Source On State Resistance | 0.025ohm |
| Gate Source Threshold Voltage Max | 500mV |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1843757RL/)

**NOT RECOMMENDED FOR NEW DESIGN USE DMN2024U** 

**DMG6968U** 

## **N-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Features** 

## **Mechanical Data** 

- Low On-Resistance 

   - 25mΩ @ VGS = 4.5V 

   - 29mΩ @ VGS = 2.5V 

   - 36mΩ @ VGS = 1.8V 

- Low Input Capacitance 

- Fast Switching Speed 

- Low Input/Output Leakage 

- **ESD Protected Up To 2kV** 

      - Case: SOT23 

      - Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

      - Moisture Sensitivity: Level 1 per J-STD-020 

      - Terminals: Finish — Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 **e3** 

      - Terminals Connections: See Diagram Below 

      - Weight: 0.008 grams (Approximate) 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found at** 

   - 

   - **https://www.diodes.com/products/automotive/automotive products/.** 

- **This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability. https://www.diodes.com/quality/product-definitions/** 

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 An Automotive-Compliant Part is Available Under Separate<br>D<br>Datasheet (DMG6968UQ)<br>G<br>BB w o<br>ESD PROTECTED TO 2kV GateDiodeProtection  S<br>Top View  Internal Schematic    Top View<br>Ordering Information (Note 4)<br>Part Number Compliance  Case Packaging<br>DMG6968U-7  Standard  SOT23  3000/Tape & Reel<br>**----- End of picture text -----**<br>


Notes:        1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

**2N4** 

2N4 = Product Type Marking Code YM = Date Code Marking Y or    = Year (ex: G = 2019) Y M = Month (ex: 9 = September) 

Date Code Key **Year 2009** … **2019 2020 2021 2022 2023 2024 2025 2026 2027 2028 Code** W … G H I J K L M N O P ~~H——_}+—_+—_—_—+ +—~~ ~~**_** +—_| +~~ **Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec** ~~/_——}_|-_}|-__+_}__|-_}__+_}_~~ **Code** 1 ~~+~~ 2 3 4 5 6 7 8 9 O N D DMG6968U 1 of 6 January 2020 Document number: DS31738 Rev. 9 - 3 **www.diodes.com** © Diodes Incorporated 

**DMG6968U** 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|
|||||||
|**Characteristic**|||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage|||VDSS|20|V|
|Gate-Source Voltage|||VGSS|±12|V|
|Continuous Drain Current (Note 5)|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|6.5<br>5.2|A|
|Pulsed Drain Current|||IDM|30|A|



## **Thermal Characteristics** 

|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|
|---|---|---|---|
|||||
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Power Dissipation (Note 5)|PD|1.3|W|
|Thermal Resistance, Junction to Ambient @ TA= +25°C|RθJA|157|°C/W|
|Operatingand Storage Temperature Range|TJ,TSTG|-55 to +150|°C|



**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

~~Pf~~ **Characteristic Symbol** ~~et~~ **Min** ~~Ul~~ **Typ** ~~lS~~ **Max** ~~Up ee~~ **Unit Test Condition OFF CHARACTERISTICS (Note 6)** ~~———————~~ Drain-Source Breakdown Voltage BVDSS 20   V VGS = 0V, ID = 250µA ~~I~~ Zero Gate Voltage Drain Current                TJ = +25°C ~~Is~~ IDSS  ~~ee~~  1.0 µA VDS = 20V, VGS = 0V Gate-Source Leakage IGSS   ±10 µA VGS = 10V, VDS = 0V ~~_———~~ Gate-Source Breakdown Voltage BVSGS ±12 — — V VDS = 0V, IG = 250µA **ON CHARACTERISTICS (Note 6)** ~~9~~ Gate Threshold Voltage ~~Gd~~ VGS(TH) ~~I~~ 0.5 ~~|)~~  0.9 V VDS = VGS, ID = 250µA 21 25 VGS = 4.5V, ID = 6.5A Static Drain-Source On-Resistance RDS(ON)  23 29 mΩ VGS = 2.5V, ID = 5.5A ~~AYOES~~ 28 36 VGS = 1.8V, ID = 3.5A Forward Transfer Admittance |Yfs|  8  S VDS = 10V, ID = 5A **DYNAMIC CHARACTERISTICS (Note 7)** Input Capacitance Ciss  151  pF Output Capacitance Coss  91  pF VDS = 10V, VGS = 0V f = 1.0MHz Reverse Transfer Capacitance Crss  32  pF ~~——— 2ee Pkce~~ Total Gate Charge Qg  8.5  nC ~~nd~~ Gate-Source Charge Qgs  1.6  nC VGS = 4.5V, VDS = 10V, ID = 6.5A Gate-Drain Charge Qgd  2.8  nC Turn-On Delay Time tD(ON)  54  ns Turn-On Rise Time tR  66  ns VDD = 10V, VGS = 4.5V, Turn-Off Delay Time tD(OFF)  613  ns RL = 10, RG = 6, ID = 1A Turn-Off Fall Time tF  205  ns ~~——<—— ee~~ Notes: 5. Device mounted on FR-4 substrate PC board, 2oz. copper, with thermal vias to bottom layer 1 inch square copper plate. 6 Short duration pulse test used to minimize self-heating effect. 

7. Guaranteed by design. Not subject to production testing. 

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**DMG6968U** 

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20 20<br>VGS = 10V V     = 5VDS<br>VGS = 4.5V<br>16 16<br>Pu VGS = 3.0V y pe  of<br>VGS = 2.5V<br>12 VGS = 2.0V 12<br>VGS = 1.5V<br>f—- of<br>8 8<br>T   = 150°CA<br>4 4 T   = 125°CA T   = 85°CA<br>T   = 25°CA<br>T   = -55°CA<br>0 0<br>0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0.5 1 1.5 2<br>Po VDS, DRAIN-SOURCE VOLTAGE (V) BR V    , GATE-SOURCE VOLTAGE (V)GS<br>Fig. 1 Typical Output Characteristic Fig. 2 Typical Transfer Characteristic<br>0.04 0.06<br>0.05 V     = 4.5VGS<br>0.03 TTT V GS = 1.8V 0.04 W O<br>T   = 150°CA<br>I V GS  = 2.5V 0.03 T   = 125°CA<br>T   = 85°CA<br>VGS = 4.5V<br>0.02 0.02 T   = 25°CA<br>TO S S<br>T   = -55°CA<br>0.01<br>| | tL LNY Y E<br>0.01 0<br>0 5 10 15 20 25 30 0 4 8 12 16 20<br>EG ID, DRAIN-SOURCE CURRENT (A) I  , DRAIN CURRENT (A)D<br>Fig. 3  Typical On-Resistance  Fig. 4 Typical On-Resistance<br>vs. Drain Current and Gate Voltage  vs. Drain Current and Temperature<br>1.6 0.06<br>yey<br>VGS = 2.5V 0.05<br>1.4 ID = 5.5A<br>VGS = 4.5V 0.04 V GS  = 2.5V<br>1.2 OIG I D = 6.5A ID = 5.5A<br>0.03<br>VGS = 4.5V<br>1.0 OF ee ID = 6.5A<br>Hee 0.02 aan<br>0.8<br>Beit 0.01 Pe<br>0.6 PETE} 0 LEE<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TA, AMBIENT TEMPERATURE ((°C)癈 ) TA, AMBIENT TEMPERATURE  ( 癈°C )<br>Fig. 5 On-Resistance Variation with Temperature Fig. 6 On-Resistance Variation with Temperature<br>, DRAIN CURRENT (A)<br>ID<br>)<br><br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>)<br><br>, DRAIN-SOURCE<br>(NORMALIZED)<br>DS(ON) ON-RESISTANCE (<br>R<br>, DRAIN-SOURCE ON-RESISTANCE<br>DS(ON)<br>R<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>D<br>, DRAIN CURRENT (A)<br>I<br>, DRAIN-SOURCE<br>DSON<br>R<br>ON-RESISTANCE (NORMALIZED)<br>DSON<br>)<br>, DRAIN-SOURCE<br>ON-RESISTANCE (<br>R<br>**----- End of picture text -----**<br>


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1.4 20<br>1.2<br>16 T   = 25°CA<br>1.0<br>| | | ft<br>COP ep ee<br>12<br>0.8 I   = 250µAD<br>0.6<br>8<br>0.4 e I   = 1mAD e~~ y<br>4<br>—_ ee DY<br>0.2<br>eM<br>0 Seeeeeenmee 0 ae<br>| | € ky<br>-50 -25 0 25 50 75 100 125 150 0 0.2 0.4 0.6 0.8 1 1.2<br>T  , AMBIENT TEMPERATURE (°C)A V    , SOURCE-DRAIN VOLTAGE (V)SD<br>Fig. 7 Gate Threshold Variation vs. Ambient Temperature Fig. 8 Diode Forward Voltage vs. Current<br>WE<br>500 100,000<br>450<br>f = 1MHz<br>400 ee 10,000 \ a<br>T   = 150°CA<br>350<br>300 hs 1,000 6p T   = 125°CA<br>250<br>200 100<br>T   = 85°CA<br>150 KEE C iss EO Qe—=—<br>100 10<br>SERS Coss WY<br>50 T   = -55°CA T   = 25°CA<br>Se = ==<br>0 Crss 1<br>0 4 8 12 16 20 0 2 4 6 8 10 12 14 16 18 20<br>eo VDS, DRAIN-SOURCE VOLTAGE (V) hv oe SSS V    , DRAIN-SOURCE VOLTAGE (V) DS<br>Fig. 9 Typical Total Capacitance Fig. 10 Typical Leakage Current vs. Drain-Source Voltage<br>1 aee nn—————<br>D = 0.7<br>D = 0.5<br>D = 0.3<br>C  SG<br>Nae TS ae<br>0.1 ell, GDMla<br>D = 0.1<br>AN A<br>D = 0.9<br>FTIR D = 0.05 CCOT eadIC<br>A D = 0.02 R R JA JA (t) = r(t) *   = 162162°C/W癈 R /W JA ON<br>0.01 724 |<br>D = 0.01<br>P(pk)<br>t1<br>Fe D = 0.005 t2<br>PT A FE et TJ - TA = P * RJA(t)<br>D = Single Pulse Duty Cycle, D = t 1 /t 2<br>0.001<br>Ecctunin LUT PI(PTI PTTIL E TED TTHL UU<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000<br>t1, PULSE DURATION TIME (s)<br>Fig. 11 Transient Thermal Response<br>, SOURCE CURRENT (A)<br>, GATE THRESHOLD VOLTAGE (V)  IS<br>GS(TH)<br>V<br>, LEAKAGE CURRENT (nA)<br>IDSS<br>C, CAPACITANCE (pF)<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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**www.diodes.com** 

EnODES 

**DMG6968U** ~~J~~ 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

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SOT23<br>**----- End of picture text -----**<br>


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All 7°<br>H<br>SOT23<br>GAUGE PLANE<br>0.25 Dim  Min  Max  Typ<br>J A  0.37  0.51  0.40<br>K1 K<br>B  1.20 1.40 1.30<br>C  2.30 2.50 2.40<br>‘Gea J; a EEE D  0.89 1.03 0.915<br>A M F  0.45 0.60 0.535<br>~ L L1  ER G  1.78  2.05  1.83<br>H  2.80  3.00  2.90<br>J  0.013  0.10  0.05<br>K  0.890  1.00  0.975<br>C B K1  0.903  1.10  1.025<br>L  0.45  0.61  0.55<br>L1  0.25  0.55  0.40<br>M  0.085 0.150 0.110<br>aeto oeSr<br>D So a  0°  8°  --<br>All Dimensions in mm<br>F G<br>_ |= as<br>Suggested Pad Layout<br>Please see http://www.diodes.com/package-outlines.html for the latest version.<br>SOT23<br>Y Dimensions  Value (in mm)<br>C  2.0<br>X  0.8<br>X1  1.35<br>Y1 ee C<br>Y  0.9<br>Y1  2.9<br>Sey<br>PAL) X X1 —<br>**----- End of picture text -----**<br>


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**DMG6968U** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. **LIFE SUPPORT** Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A.   Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2020, Diodes Incorporated **www.diodes.com**[,.] DMG6968U 6 of 6 January 2020 Document number: DS31738 Rev. 9 - 3 **www.diodes.com** © Diodes Incorporated 

January 2020 © Diodes Incorporated 



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- [Supplier page](https://es.farnell.com/diodes-inc/dmg6968u-7/mosfet-n-ch-20v-6-5a-sot-23/dp/1843757RL)
---

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