# Power MOSFET, N Channel, 30 V, 10 A, 0.015 ohm, SOIC, Surface Mount

![Product image](https://novapart.co/image/farnell:3943493RL/)

**URL**: https://novapart.co/products/DMG4466SSS-13/power-mosfet-n-channel-30-v-10-a-0015-ohm-soic
**SKU**: DMG4466SSS-13
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.1090
**Stock**: 1000+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 1.42W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOIC |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 10A |
| Drain Source On State Resistance | 0.015ohm |
| Gate Source Threshold Voltage Max | 1.45V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943493RL/)

**DMG4466SSS N-CHANNEL ENHANCEMENT MODE MOSFET** | 

## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|
|**V(BR)DSS**<br>**RDS(ON) max**<br>**ID max**<br>**TA = +25°C**<br>30V<br>23mΩ@VGS= 10V<br>10A<br>33mΩ@VGS= 4.5V<br>8A|||
|**V(BR)DSS**|**RDS(ON) max**|**ID max**<br>**TA = +25°C**|
|30V|23mΩ@VGS= 10V|10A|
||33mΩ@VGS= 4.5V|8A|



## **Features and Benefits** 

- Low On-Resistance 

- Low Input Capacitance 

- Fast Switching Speed 

- Low Input/Output Leakage 

- Low Gate Resistance 

## **Description** 

This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

## **Mechanical Data** 

## **Applications** 

- Backlighting 

- Power Management Functions 

- DC-DC Converters 

- Case: SO-8 

- Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminal Connections Indicator: See diagram 

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 Terminals: Finish  Matte Tin annealed over Copper leadframe.<br>Solderable per MIL-STD-202, Method 208  O e3<br> Weight: 0.074 grams (approximate)<br>D<br>SO-8  S mn TT] D<br>~~ S mn i” D<br>G<br>S D<br>G mn TT] D<br>CT TO S<br>Top View  Equivalent circuit<br>Top View  Internal Schematic<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information** (Note 4)|||
|---|---|---|
|**Part Number**|**Case**|**Packaging**|
|DMG4466SSS-13|SO-8|2500 / Tape&Reel|



- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 

   2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. 

## **Marking Information** 

**==> picture [241 x 111] intentionally omitted <==**

**----- Start of picture text -----**<br>
8 5 8 5<br>PTET Ty I PTO<br>G4466SS G4466SS<br>YY WW YY WW<br>1 4 1 4<br>~LOFI  o PT LILI LU<br>Chengdu A/T Site Shanghai A/T Site<br>**----- End of picture text -----**<br>


= Manufacturer’s Marking 

G4466SS = Product Type Marking Code YYWW = Date Code Marking YY or YY = Year (ex: 13 = 2013) WW = Week (01 - 53) 

YY = Date Code Marking for SAT (Shanghai Assembly/ Test site) YY = Date Code Marking for CAT (Chengdu Assembly/ Test site) 

1 of 6 **www.diodes.com** 

DMG4466SSS Document number: DS32137 Rev. 4 - 2 

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**DMG4466SSS** 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|
|||||||
|**Characteristic**|||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage|||VDSS|30|V|
|Gate-Source Voltage|||VGSS|±25|V|
|Continuous Drain Current (Note 5)|Steady<br>State|TA = +25°C<br>TA = +85°C|ID|10<br>6|A|
|Pulsed Drain Current (Note 5)|||IDM|60|A|
|Avalanche Current  (Notes 6)|||IAR|16|A|
|Repetitive Avalanche Energy  (Notes 6) L = 0.1mH|||EAR|12.8|mJ|



## **Thermal Characteristics** 

|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|
|---|---|---|---|
|||||
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Power Dissipation (Note 5)|PD|1.42|W|
|Thermal Resistance, Junction to Ambient @TA= +25°C  (Note 5)|RθJA|88.4|°C/W|
|Operating and Storage Temperature Range|TJ,TSTG|-55 to +150|°C|



## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
|~~I~~<br>~~(~~|||||||
|**Characteristic**<br>~~RD~~|**Symbol**<br>~~RD~~|**Min**<br>~~RD~~<br>~~I~~|**Typ **<br>~~RD~~|**Max**<br>~~RD~~|**Unit**<br>~~RD~~<br>~~(~~|**Test Condition**<br>~~RD~~<br>~~(~~|
|**OFF CHARACTERISTICS(Note 7) **<br>~~I~~<br>~~(~~<br>~~a~~|||||||
|Drain-Source Breakdown Voltage<br>~~a~~|BVDSS<br>~~a~~|30<br>~~a~~|—<br>~~a~~|—<br>~~a~~|V<br>~~a~~|VGS= 0V, ID= 250μA<br>~~a~~|
|Zero Gate Voltage Drain Current<br>~~a~~|IDSS<br>~~a~~|—<br>~~a~~|—<br>~~a~~|1<br>~~a~~|μA<br>~~a~~|VDS= 30V, VGS= 0V<br>~~a~~|
|Gate-Source Leakage<br>~~a~~|IGSS<br>~~a~~|—<br>~~a~~|—<br>~~a~~|±100<br>~~a~~|nA<br>~~a~~|VGS= ±25V, VDS= 0V<br>~~a~~|
|**ON CHARACTERISTICS(Note 7) **<br>~~GsQO(QO~~<br>~~eo~~|||||||
|Gate Threshold Voltage<br>~~Ds~~<br>~~eo~~|VGS(th)<br>~~Ds~~<br>|1.0<br>~~Ds~~<br>~~Gs~~<br>|1.45<br>~~Ds~~<br>~~QO~~<br>|2.4<br>~~Ds~~<br>~~(QO~~<br>|V<br>~~Ds~~<br>~~(QO~~<br>|VDS= VGS, ID= 250μA<br>~~Ds~~<br>~~(QO~~<br>|
|Static Drain-Source On-Resistance<br>~~eo~~|RDS (ON)<br>|—<br>~~Gs~~<br>|15<br>25<br>~~QO~~<br>|23<br>33<br>~~(QO~~<br>|mΩ<br>~~(QO~~<br>|VGS= 10V, ID= 10A<br>~~(QO~~<br>|
|||||||VGS= 4.5V, ID= 7.5A<br>~~(QO~~<br>|
|Forward Transfer Admittance<br>~~eoi~~||Yfs|<br>~~i~~|—<br>~~Gs~~<br>~~i~~|2.5<br>~~QO ~~<br>~~i~~|—<br> ~~(QO~~<br>~~i~~|S<br>~~(QO~~<br>~~i~~|VDS= 5V, ID= 10A<br>~~(QO~~<br>~~i~~|
|Diode Forward Voltage<br>~~i~~|VSD<br>~~i~~|—<br>~~i~~|0.69<br>~~i~~|1<br>~~i~~|V<br>~~i~~|VGS= 0V, IS= 1A<br>~~i~~|
|**DYNAMIC CHARACTERISTICS(Note 8)**<br>~~ss~~|||||||
|Input Capacitance<br>~~QO~~|Ciss<br>~~QO~~<br>~~Gs~~|—<br>~~QO~~<br>~~ss~~<br>~~Gs~~|478.9<br>~~QO~~<br>~~ss~~|—<br>~~QO~~|pF<br>~~QO~~|VDS= 15V, VGS= 0V,<br>f = 1.0MHz|
|Output Capacitance<br>~~a~~|Coss<br>~~a~~<br>~~Gs~~|—<br>~~ss~~<br>~~a~~<br>~~Gs~~|96.7<br>~~ss~~<br>~~a~~|—<br>~~a~~|pF<br>~~a~~||
|Reverse Transfer Capacitance<br>~~I~~|Crss<br>~~Gs~~<br>~~I~~|—<br>~~Gs~~<br>~~I~~|61.4|—|pF||
|Gate Resistance<br>~~I~~<br>~~——~~|Rg<br>~~I~~<br>~~——~~|0.4<br>~~I~~|1.1|1.6|Ω<br>~~e~~|VDS= 0V, VGS= 0V, f = 1MHz<br>~~ee~~|
|Total Gate Charge(VGS= 4.5V)<br>~~I~~<br>~~——~~|Qg<br>~~I~~<br>~~——~~|—<br>~~I~~|5.0|8|nC<br>~~e~~|VDS= 15V, VGS= 10V, ID= 10A<br>~~ee~~<br>~~ee~~|
|Total Gate Charge(VGS= 10V)<br>~~Ps~~<br>~~——~~|Qg<br>~~Ps~~<br>~~——~~|—<br>~~Ps~~|10.5<br>~~Ps~~|17<br>~~Ps~~|||
|Gate-Source Charge<br>~~——~~|Qgs<br>~~——~~|—|1.8|—|nC<br>~~e~~||
|Gate-Drain Charge<br>~~——~~<br>~~———~~|Qgd<br>~~——~~|—|1.6|—<br>~~ee~~|nC<br>~~e~~<br>~~ee~~||
|Turn-On Delay Time<br>~~——~~<br>~~———~~|tD(on)<br>~~——~~|—|2.9|—<br>~~ee~~|ns<br>~~e~~<br>~~ee~~|VGS= 10V, VDS= 15V,<br>RG= 3Ω, RL= 1.5Ω<br>~~ee~~<br>~~ee~~|
|Turn-On Rise Time<br>~~——~~<br>~~I~~<br>~~———~~|tr<br>~~——~~<br>~~I~~|—<br>~~I~~|7.9<br>~~I~~|—<br>~~I~~<br>~~ee~~|ns<br>~~e~~<br>~~I~~<br>~~ee~~||
|Turn-Off Delay Time<br>~~———~~|tD(off)|—|14.6|—<br>~~ee~~|ns<br>~~ee~~||
|Turn-Off Fall Time<br>~~———~~|tf|—|3.1|—<br>~~ee~~|ns<br>~~ee~~||



Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. IAR and EAR rating are based on low frequency and duty cycles to keep TJ = +25°C 

7. Short duration pulse test used to minimize self-heating effect. 

8. Guaranteed by design. Not subject to product testing. 

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**DMG4466SSS** 

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30 20<br>VGS = 10V<br>25 VDS = 5V<br>VGS = 4.5V 15<br>20 V GS  = 4.0V<br>15 VGS = 3.5V 10<br>VGS = 150°C<br>10 VGS = 125°C<br>5 VGS = 85°C<br>5 V GS  = 3.0V VGS = 25°C<br>VGS = 2.5V VGS = -55°C<br>0 0<br>0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 0.5 1 1.5 2 2.5 3 3.5 4<br>VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)<br>Fig. 1 Typical Output Characteristic Fig. 2  Typical Transfer Characteristic<br>0.05 0.04<br>VGS = 10V<br>0.04<br>0.03<br>TA = 150°C<br>VGS = 3.5V TA = 125°C<br>0.03<br>TA = 85°C<br>VGS = 4.5V 0.02<br>0.02 TA = 25°C<br>zannee VGS = 10V 0.01 ——— T A  = -55°C<br>0.01<br>0 0<br>0 5 10 15 20 25 30 0 5 10 15 20 25 30<br>ID, DRAIN-SOURCE CURRENT (A) ID, DRAIN CURRENT (A)<br>Fig. 3  Typical On-Resistance  Fig. 4 Typical On-Resistance<br>vs. Drain Current and Gate Voltage  vs. Drain Current and Temperature<br>1.7 0.06<br>1.5 VGSID = 5A = 4.5V 0.05<br>1.3 VGS = 10V 0.04<br>ID = 10A<br>VGS = 4.5V<br>1.1 0.03 I D = 5A<br>0.9 0.02<br>VGS = 10V<br>ID = 10A<br>0.7 EEE 0.01 ——<br>0.5 0<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TA, AMBIENT TEMPERATURE (°C) TA, AMBIENT TEMPERATURE (°C)<br>Fig. 5 On-Resistance Variation with Temperature Fig. 6 On-Resistance Variation with Temperature<br>, DRAIN CURRENT (A) , DRAIN CURRENT (A)<br>ID ID<br>) )<br>, DRAIN-SOURCE ON-RESISTANCE ( ,  DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R DS(ON)<br>R<br>)<br>, DRAIN-SOURCE<br>DSON<br>R<br>ON-RESISTANCE (NORMALIZED) , DRAIN-SOURCE ON-RESISTANCE (<br>DSON<br>R<br>**----- End of picture text -----**<br>


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2.0<br>1.8<br>1.6<br>1.4 I D  = 1mA<br>1.2 I D  = 250µA<br>1.0<br>0.8<br>0.6<br>-50 -25 0 25 50 75 100 125 150<br>TA, AMBIENT TEMPERATURE (°C)<br>Fig. 7 Gate Threshold Variation vs. Ambient Temperature<br>1,000<br>f = 1MHz<br>C iss<br>a<br>100 Coss<br>— C rss<br>10<br>0 5 10 15 20 25 30<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 9 Typical Total Capacitance<br>10<br>8<br>6 VIDSD = 10A = 15V<br>4<br>2<br>0<br>0 2 4 6 8 10 12<br>Qg, TOTAL GATE CHARGE (nC)<br>Fig. 11 Gate-Charge Characteristics<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(TH)<br>V<br>C, CAPACITANCE (pF)<br>, GATE-SOURCE VOLTAGE (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


**==> picture [215 x 438] intentionally omitted <==**

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20<br>18<br>16<br>14<br>12 TA = 25 ° C<br>10<br>8<br>6<br>4<br>2<br>0<br>0.2 0.4 0.6 0.8 1.0 1.2<br>VSD, SOURCE-DRAIN VOLTAGE (V)<br>Fig. 8 Diode Forward Voltage vs. Current<br>10,000<br>1,000 —- | T A  = 150°C<br>TA = 125 ° C<br>100<br>===<br>T A  = 85°C<br>10<br>er TA = 25°C<br>1<br>0 5 10 15 20 25 30<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 10 Typical Leakage Current<br>vs. Drain-Source Voltage<br>, SOURCE CURRENT (A)<br>IS<br>, LEAKAGE CURRENT (nA)<br>IDSS<br>**----- End of picture text -----**<br>


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**DMG4466SSS** 

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1<br>D = 0.7<br>D = 0.5<br>———S<br>D = 0.3<br>0.1 tart<br>D = 0.1<br>D = 0.05 D = 0.9<br>RJA(t) = r(t) * RJA<br>D = 0.02 RJA = 90°C/W<br>0.01<br>D = 0.01 P(pk)<br>t1<br>D = 0.005 t2<br>T J  - T A  = P * R JA (t)<br>Duty Cycle, D = t 1 /t 2<br>D = Single Pulse<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000<br>t1, PULSE DURATION TIME (s)<br>Fig. 12 Transient Thermal Response<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


## **Package Outline Dimensions** 

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. 

**==> picture [245 x 127] intentionally omitted <==**

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E1 E<br>Gauge Plane<br>A1 Seating Plane<br>L<br>Detail ‘A’<br>h 7°~9°<br>45°<br>Detail ‘A’<br>A2 A A3<br>e b<br>D<br>0.254<br>**----- End of picture text -----**<br>


|**SO-8**|**SO-8**|**SO-8**|
|---|---|---|
|**Dim**|**Min**|**Max**|
|**A**|-|1.75|
|**A1**|0.10|0.20|
|**A2**|1.30|1.50|
|**A3**|0.15|0.25|
|**b**|0.3|0.5|
|**D**|4.85|4.95|
|**E**|5.90|6.10|
|**E1**|3.85|3.95|
|**e**|1.27 Typ||
|**h**|-|yp<br>0.35|
|**L**|0.62|0.82|
||0|8|
|All Dimensions in mm|||



## **Suggested Pad Layout** 

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for latest version. 

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X<br>Too 7<br>; C1<br>C2<br>Y<br>t OG i<br>**----- End of picture text -----**<br>


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Dimensions Value (in mm)<br>X  0.60<br>Y  1.55<br>C1  5.4<br>C2  1.27<br>**----- End of picture text -----**<br>


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**DMG4466SSS** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending.  Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference.  Only the English version of this document is the final and determinative format released by Diodes Incorporated. **LIFE SUPPORT** Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A.   Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2013, Diodes Incorporated **www.diodes.com** 

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DMG4466SSS Document number: DS32137 Rev. 4 - 2 

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- [Supplier page](https://es.farnell.com/diodes-inc/dmg4466sss-13/mosfet-n-ch-30v-10a-soic/dp/3943493RL)
---

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