# Power MOSFET, P Channel, 30 V, 12 A, 6300 µohm, SOIC, Surface Mount

![Product image](https://novapart.co/image/farnell:3943492/)

**URL**: https://novapart.co/products/DMG4413LSS-13/power-mosfet-p-channel-30-v-12-a-6300-ohm-soic
**SKU**: DMG4413LSS-13
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.3510
**Stock**: 1000+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 1.7W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOIC |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 12A |
| Drain Source On State Resistance | 6300µohm |
| Gate Source Threshold Voltage Max | 1.6V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943492/)

**NOT RECOMMENDED FOR NEW DESIGN USE DMP3007LSS DMG4413LSS** 

## **30V P-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|
||||
|**BVDSS**<br>-30V|**RDS(ON) max**|**ID max**<br>**TA = +25°C**|
||7.5mΩ@VGS= -10V|-12A|
||10.2mΩ@VGS= -4.5V|-10A|



## **Features and Benefits** 

- Low On-Resistance 

- Low Input Capacitance 

- Fast Switching Speed 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

## **Description** 

This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. 

- **Qualified to AEC-Q101 Standards for High Reliability** 

- **An Automotive-Compliant Part is Available Under Separate Datasheet (DMG4413LSSQ)** 

## **Mechanical Data** 

- Case: SO-8 

- Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 

## **Applications** 

   - Moisture Sensitivity: Level 1 per J-STD-020 

- Backlighting 

   - Terminal Connections Indicator: See Diagram Below 

- Power Management Functions 

- DC-DC Converters 

- Terminals: Finish  Matte Tin Annealed over Copper Lead Frame. Solderable per MIL-STD-202, Method 208 

- Weight: 0.074 grams (Approximate) 

**==> picture [416 x 211] intentionally omitted <==**

**----- Start of picture text -----**<br>
<br>D<br>SO-8<br>S =a To D<br>S D<br>S rT TT D G<br>ve G = _ D<br>S<br>Top View  Top View<br>Pin-out  Equivalent Circuit<br> Information (Note 4)<br>Part Number Case Packaging<br>DMG4413LSS-13 SO-8 2500/Tape & Reel<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and 

- Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

**==> picture [207 x 108] intentionally omitted <==**

**----- Start of picture text -----**<br>
8 5 8 5<br>PT PA fT PIL fit<br>P4413LS P4413LS<br>YY WW YY WW<br>lo<br>PP} 1 LE Ld 4 PI} 1 LE Lg 4<br>Chengdu A/T Site Shanghai A/T Site<br>**----- End of picture text -----**<br>


31 = Manufacturer’s Marking P4413LS = Product Type Marking Code YYWW = Date Code Marking YY or YY = Year (ex: 18 = 2018) WW = Week (01 to 53) YY = Date Code Marking for SAT (Shanghai Assembly/ Test Site) ~~—~~ YY = Date Code Marking for CAT (Chengdu Assembly/ Test Site) 

1 of 6 **www.diodes.com** 

DMG4413LSS Document number: DS31754  Rev. 7 - 3 

December 2018 © Diodes Incorporated 

**NOT RECOMMENDED FOR NEW DESIGN USE DMP3007LSS** 

**DMG4413LSS** 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|
|||||||
|**Characteristic**|||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage|||VDSS|-30|V|
|Gate-Source Voltage|||VGSS|±20|V|
|Continuous Drain Current (Note 6) VGS= -10V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|-12<br>-10|A|
||t<10s|TA= +25°C<br>TA= +70°C|ID|-22<br>-17|A|
|Continuous Drain Current (Note 6) VGS= -4.5V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|-10<br>-8|A|
||t<10s|TA= +25°C<br>TA= +70°C|ID|-18<br>-14|A|
|Pulsed Drain Current(10µs Pulse,DutyCycle = 1%)|||IDM|-45|A|
|Maximum BodyDiode Continuous Current|||IS|-4|A|



## **Thermal Characteristics** 

|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|
|---|---|---|---|---|
||||||
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Total Power Dissipation (Note 5)|TA= +25°C|PD|1.7|W|
||TA= +70°C||1.1||
|Thermal Resistance, Junction to Ambient (Note 5)|SteadyState|RθJA|74|°C/W|
||t<10s||22||
|Total Power Dissipation (Note 6)|TA= +25°C|PD|2.2|W|
||TA= +70°C||1.4||
|Thermal Resistance, Junction to Ambient (Note 6)|SteadyState|RθJA|56|°C/W|
||t<10s||17||
|Thermal Resistance,Junction to Case(Note 6)|SteadyState|RθJC|2.5||
|Operatingand Storage Temperature Range||TJ,TSTG|-55 to +150|°C|



**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS(Note 7)**|||||||
|Drain-Source Breakdown Voltage|BVDSS|-30|||V|VGS= 0V,ID= -250µA|
|Zero Gate Voltage Drain Current|IDSS|||-1|µA|VDS= -30V,VGS= 0V|
|Gate-Source Leakage|IGSS|||±1|µA|VGS= ±20V,VDS= 0V|
|**ON CHARACTERISTICS(Note 7)**|||||||
|Gate Threshold Voltage|VGS(TH)|-1.1|-1.6|-2.1|V|VDS= VGS,ID= -250µA|
|Static Drain-Source On-Resistance|RDS(ON)|<br>|6.3<br>7.9|7.5<br>10.2|m|VGS= -10V, ID= -13A<br>VGS= -4.5V,ID= -10A|
|Forward Transconductance|gfs||26||S|VDS= -15V,ID= -13A|
|Diode Forward Voltage|VSD||-0.7|-1.0|V|VGS= 0V,IS= -2.7A|
|**DYNAMIC CHARACTERISTICS(Note 8)**|||||||
|Input Capacitance<br>~~ee~~|Ciss<br>~~ee~~|<br>~~ee~~|4965<br>~~ee~~|<br>~~ee~~|pF<br>~~ee~~|VDS= -15V, VGS= 0V<br>f = 1.0MHz<br>~~ee~~|
|Output Capacitance<br>~~ee~~|Coss<br>~~ee~~|<br>~~ee~~|1487<br>~~ee~~|<br>~~ee~~|pF<br>~~ee~~||
|Reverse Transfer Capacitance<br>~~ee~~|Crss<br>~~ee~~|<br>~~ee~~|711<br>~~ee~~|<br>~~ee~~|pF<br>~~ee~~||
|Gate Resistance<br>~~A~~|RG<br>~~A~~|<br>~~A~~|7.3<br>~~A~~|<br>~~A~~|<br>~~A~~|VDS= 0V, VGS= 0V<br>f = 1.0MHz<br>~~A~~|
|**SWITCHING CHARACTERISTICS(Note 8)**|||||||
|Total Gate Charge|QG||46||nC|VDS= -15V, VGS= -5V<br>ID= -13A|
|Gate-Source Charge|QGS||17||||
|Gate-Drain Charge|QGD||16||||
|Turn-On DelayTime|tD(ON)||15||ns|VDS= -15V, VGS= -10V,<br>ID= -1A, RG= 6.0|
|Rise Time|tR||9||||
|Turn-Off DelayTime|tD(OFF)||160||||
|Fall Time|tF||66||||



- Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 

   6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 

   7. Short duration pulse test used to minimize self-heating effect. 

   8. Guaranteed by design. Not subject to product testing. 

2 of 6 **www.diodes.com** 

DMG4413LSS Document number: DS31754  Rev. 7 - 3 

December 2018 © Diodes Incorporated 

**NOT RECOMMENDED FOR NEW DESIGN** 

**DMG4413LSS** 

**USE DMP3007LSS** 

**==> picture [486 x 673] intentionally omitted <==**

**----- Start of picture text -----**<br>
30 30<br>VGS = -8.0V<br>25 V GS  = -4.5V 25 V     = -5VDS<br>20 Pla==oe V GS  = -3.5V [A)] (T [N] E 20 aas aanysear inenee<br>R<br>R<br>15 |Pe UC 15 neeeee! Gee<br>[IN] A<br>R<br>10 D 10<br>f e , D<br>VGS = -3.2V - [I] T   = 150°CA<br>5 5 T   = 125°CA T   = 85°CA<br>T   = 25°CA<br>[ee VGS = -3.0V T   = -55°CA<br>0 0<br>0 1 2 3 4 5 0 1 2 3 4 5<br>L -VDS, DRAIN-SOURCE VOLTAGE (V) F -V    , GATE-SOURCE VOLTAGE (V)GS<br>Fig. 1 Typical Output Characteristic Fig. 2 Typical Transfer Characteristic<br>0.05 ) 0.05<br>(<br>E<br>C V      = -4.5VGS<br>N<br>0.04 TA 0.04<br>I [S] S<br>E<br>- [R]<br>0.03 Ett W 0.03 c [I] [NO]<br>[N] O<br>Wo<br>E<br>C<br>R<br>0.02 [U] O 0.02 T   = 125°CA T   = 150°CA<br>LAR - [S] Q ¥L<br>[N] RIA T   = 85°CA<br>0.01 V GS  = -4.5V D 0.01 T   = 25°CA<br>VGS = -8.0V , T   = -55°CA<br>( [ON)]<br>D [S]<br>0 oe AN R 0 SS<br>0 5 10 15 20 25 30 0 5 10 15 20 25 30<br>| -ID, DRAIN-SOURCE CURRENT (A) KT an -I  , DRAIN CURRENT (A)D e<br>Fig. 3  Typical On-Resistance  Fig. 4 Typical On-Resistance<br>vs. Drain Current and Gate Voltage  vs. Drain Current and Temperature<br>1.7 0.030<br>1.5 AN IQLY) 0.025 ELL ELIE<br>VGS = -4.5V<br>1.3 ID = -5A 0.020<br>DOr Foo<br>VGS = -10V<br>1.1 I D = -10A 0.015 V GS  = -4.5V<br>ID = -5A<br>0.9 coe 0.010 SEggEEs=<br>ape an CELE VGS = -10V<br>ID = -10A<br>0.7 aTOCED 0.005 EEC<br>0.5 COPE 0 Cee<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TA, AMBIENT TEMPERATURE  ( °C 癈 ) TA, AMBIENT TEMPERATURE  ( °C 癈 )<br>Fig. 5 On-Resistance Variation with Temperature Fig. 6 On-Resistance Variation with Temperature<br>, DRAIN CURRENT (A)<br>D<br>-I<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON)<br>R<br>(NORMALIZED)<br>, DRAIN-SOURCE ON-RESISTANCE<br>DS(ON)<br>R<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>DS(ON)<br>, DRAIN-SOURCE<br>DSON<br>R<br>ON-RESISTANCE (NORMALIZED)<br>, DRAIN CURRENT (A)<br>-I<br>D<br>**----- End of picture text -----**<br>


3 of 6 **www.diodes.com** 

DMG4413LSS Document number: DS31754  Rev. 7 - 3 

December 2018 © Diodes Incorporated 

**DMG4413LSS** 

## **NOT RECOMMENDED FOR NEW DESIGN** 

## **USE DMP3007LSS** 

**==> picture [514 x 438] intentionally omitted <==**

**----- Start of picture text -----**<br>
3.0 20<br>)<br>( [V] 2.7 TT PELLLeL, 18 TTT<br>G [E]<br>2.4 16<br>ct P y I   = -1mAD ry PPT L LLLeltiE LLL<br>[LTA] O<br>V 2.1 S S S 14 PPT LLL LLL<br>[LD] O 1.8 I   = -250µAD 12 TA = 25°CT A  = 25 癈<br>HSE 1.5 PS S~~ 10 EE At<br>R<br>T [H] 1.2 TELE 8 TOE EE<br>T [E]<br>0.9 PF ee LE 6 OAL<br>G [A]<br>, ) 0.6 4<br>TEE Le TTT<br>( [TH]<br>G [S] 0.3 ee 2 ND)<br>- [V] See<br>0 FF ELE LEL 0 AZT77) 2ee<br>-50 -25 0 25 50 75 100 125 150 0.2 0.4 0.6 0.8 1.0 1.2<br>T  , AMBIENT TEMPERATURE (°C)A -VSD, SOURCE-DRAIN VOLTAGE (V)<br>Fig. 7 Gate Threshold Variation vs. Ambient Temperature Fig. 8 Diode Forward Voltage vs. Current<br>10,000 a a 100  2... et<br>f = 1MHz RDS(ON) PW = 100µs<br>——— C ee iss ee ee f Limited  STNNTT<br>10<br>Coss<br>1,000 Lo 1  FNS PW = 1ms  OS<br>C rss PW = 10ms<br>TJ(Max) = 150 ℃<br>0.1  TC = 25 ℃ PW = 100ms<br>Single Pulse  PW = 1s<br>DUT on 1*MRP Board  PW = 10s<br>100 | | Ry VGS = -4.5V AE ay DC  AEC<br>0.01<br>0 5 10 15 20 25 30<br>-VDS, DRAIN-SOURCE VOLTAGE (V) y. g | 0.1  -VDS, DRAIN-SOURCE VOLTAGE (V) 1  el 10  all 100<br>Fig. 9 Typical Total Capacitance<br>Fig. 10 SOA, Safe Operation Area<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(TH)<br>-V<br>, DRAIN CURRENT (A)<br>D<br>-I<br>, SOURCE CURRENT (A)<br>S<br>-I<br>C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


4 of 6 **www.diodes.com** 

DMG4413LSS Document number: DS31754  Rev. 7 - 3 

December 2018 © Diodes Incorporated 

**NOT RECOMMENDED FOR NEW DESIGN USE DMP3007LSS** 

**DMG4413LSS** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **SO-8** 

**==> picture [500 x 496] intentionally omitted <==**

**----- Start of picture text -----**<br>
SO-8<br>Dim  Min  Max  Typ<br>A  1.40 1.50 1.45<br>E === A1  0.10  0.20  0.15<br>b  0.30  0.50  0.40<br>c  0.15  0.25  0.20<br>1<br>D  4.85  4.95  4.90<br>E  5.90  6.10  6.00<br>E1  3.80  3.90  3.85<br>E0  3.85  3.95  3.90<br>b E1 e  --  --  1.27<br>h  -  --  0.35<br>h<br>Q L   0.62  0.82  0.72<br>7° Q 0.60 0.70 0.65<br>c All Dimensions in mm<br>A 4°± 3°<br>G auge Plane<br>S eating Plane<br>L<br>e A1 E0<br>D<br>Suggested Pad Layout<br>Please see http://www.diodes.com/package-outlines.html for the latest version.<br>SO-8<br>X1<br>Dimensions Value (in mm)<br>C  1.27<br>X  0.802<br>X1  4.612<br>SR Y  1.505<br>Y1 Y1  6.50<br>Y<br>Misia C X<br>9° (All sides)<br>R 0.1<br>45°<br>**----- End of picture text -----**<br>


5 of 6 **www.diodes.com** 

DMG4413LSS Document number: DS31754  Rev. 7 - 3 

December 2018 © Diodes Incorporated 

**NOT RECOMMENDED FOR NEW DESIGN USE DMP3007LSS** 

**DMG4413LSS** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings > noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. **LIFE SUPPORT** Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: we A.   Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or WD 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Mwy“ Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its US representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2018, Diodes Incorporated **www.diodes.com** & 

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DMG4413LSS Document number: DS31754  Rev. 7 - 3 

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## Links

- [View this product on Novapart](https://novapart.co/products/DMG4413LSS-13/power-mosfet-p-channel-30-v-12-a-6300-ohm-soic)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/dmg4413lss-13/mosfet-p-ch-30v-12a-soic/dp/3943492)
---

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