# Power MOSFET, P Channel, 30 V, 9.9 A, 9000 µohm, SOIC, Surface Mount

![Product image](https://novapart.co/image/farnell:3943491/)

**URL**: https://novapart.co/products/DMG4407SSS-13/power-mosfet-p-channel-30-v-99-a-9000-ohm-soic
**SKU**: DMG4407SSS-13
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.1850
**Stock**: 10+
**Lead Time**: 134 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 1.45W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 20V |
| Transistor Case Style | SOIC |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 155°C |
| Continuous Drain Current Id | 9.9A |
| Drain Source On State Resistance | 9000µohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943491/)

rly **NOT RECOMMENDED FOR NEW DESIGN USE DMP3018SSS DMG4407SSS** DmODES ~~|~~ CO **P-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

|**BVDSS**<br>**RDS(ON) max**<br>**ID max**<br>**TA = +25°C**<br>-30V<br>11mΩ@VGS= -20V<br>-9.9A<br>17mΩ@VGS= -6V<br>-8.2A|**BVDSS**<br>**RDS(ON) max**<br>**ID max**<br>**TA = +25°C**<br>-30V<br>11mΩ@VGS= -20V<br>-9.9A<br>17mΩ@VGS= -6V<br>-8.2A|**BVDSS**<br>**RDS(ON) max**<br>**ID max**<br>**TA = +25°C**<br>-30V<br>11mΩ@VGS= -20V<br>-9.9A<br>17mΩ@VGS= -6V<br>-8.2A|
|---|---|---|
|**BVDSS**|**RDS(ON) max**|**ID max**<br>**TA = +25°C**|
|-30V|11mΩ@VGS= -20V|-9.9A|
||17mΩ@VGS= -6V|-8.2A|



## **Features and Benefits** 

- Low On-Resistance 

- Low Input Capacitance 

- Fast Switching Speed 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

## **Description** 

## **Mechanical Data** 

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. 

- Case: SO-8 

- Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 

## **Applications** 

   - Moisture Sensitivity: Level 1 per J-STD-020 

   - Terminal Connections Indicator: See Diagram 

- Backlighting 

   - Terminals: Finish  Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 

- Power Management Functions 

- DC-DC Converters 

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 Weight: 0.075 grams (Approximate)<br>SO-8  D<br>S EO rT D<br>S  D<br>G<br>, Sy S nurT TTrT D<br>“¢ G me TI D Gate Protection<br>Diode S<br>Top View<br>Top View  Equivalent Circuit<br> Information (Note 4)<br>Part Number Case Packaging<br>DMG4407SSS-13 SO-8 2500/Tape & Reel<br>**----- End of picture text -----**<br>


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## **Ordering Information** (Note 4) 

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 

Notes: 

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and 

Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

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8 5 8 5<br>A Seenee<br>Jit ait<br>G4407SS G4407SS<br>YY WW YY WW<br>O O<br>1 4 1 4<br>PILI LI LILIUI oo<br>Chengdu A/T Site Shanghai A/T Site<br>**----- End of picture text -----**<br>


. = Manufacturer’s Marking G4407SS = Product Type Marking Code YYWW = Date Code Marking YY or YY = Year (ex: 18 = 2018) WW = Week (01 to 53) YY = Date Code Marking for SAT (Shanghai Assembly/ Test site) ~~_~~ YY = Date Code Marking for CAT (Chengdu Assembly/ Test site) 

1 of 7 **www.diodes.com** 

DMG4407SSS Document number: DS35540  Rev. 7 - 3 

March 2018 © Diodes Incorporated 

**NOT RECOMMENDED FOR NEW DESIGN USE DMP3018SSS** 

**DMG4407SSS** 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|
|||||||
|**Characteristic**|||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage|||VDSS|-30|V|
|Gate-Source Voltage|||VGSS|±25|V|
|Continuous Drain Current (Note 6) VGS= -20V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|-9.9<br>-7.9|A|
||t<10s|TA= +25°C<br>TA= +70°C|ID|-12.5<br>-10.0|A|
|Continuous Drain Current (Note 6) VGS= -6V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|-8.2<br>-6.5|A|
||t<10s|TA= +25°C<br>TA= +70°C|ID|-11.0<br>-8.7|A|
|Maximum Continuous BodyDiode Forward Current(Note 6)|||IS|-3.0|A|
|Pulsed Drain Current(10µs Pulse,DutyCycle = 1%)|||IDM|-80|A|



## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|
||||||
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Total Power Dissipation(Note 5)||PD|1.45|W|
|Thermal Resistance, Junction to Ambient (Note 5)|Steady State|RθJA|88|°C/W|
||t<10s||50|°C/W|
|Total Power Dissipation(Note 6)||PD|1.82|W|
|Thermal Resistance, Junction to Ambient (Note 6)|SteadyState|RθJA|70|°C/W|
||t<10s||41|°C/W|
|Thermal Resistance,Junction to Case(Note 6)||RθJC|7.6|°C/W|
|Operatingand Storage Temperature Range||TJ,TSTG|-50 to +155|°C|



## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**|**Symbol**|**Min**|**Typ **|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS(Note 7) **|||||||
|Drain-Source Breakdown Voltage|BVDSS|-30|—|—|V|VGS= 0V,ID= -250μA|
|Zero Gate Voltage Drain Current|IDSS|—|—|-1|μA|VDS= -30V,VGS= 0V|
|Gate-Source Leakage|IGSS|—|—|±10|μA|VGS= ±25V,VDS= 0V|
|**ON CHARACTERISTICS(Note 7) **<br>~~OAS~~<br>~~VEE~~|||||||
|Gate Threshold Voltage<br>~~OAS~~|VGS(TH)<br>~~VEE~~|-1.7<br>~~VEE~~|—<br>~~VEE~~|-3.0|V|VDS= VGS,ID= -250μA|
|Static Drain-Source On-Resistance<br>~~OAS~~|RDS(ON)<br>~~VEE~~|—<br>~~VEE~~|9<br>~~VEE~~|11|mΩ|VGS= -20V,ID= -12A|
|||—<br>~~VEE~~|10<br>~~VEE~~|13||VGS= -10V,ID= -10A|
|||—<br>~~VEE~~|12.7<br>~~VEE~~|17||VGS= -6V,ID= -10A|
|Forward Transfer Admittance<br>~~OAS~~||Yfs|<br>~~VEE~~|—<br>~~VEE~~|21<br>~~VEE~~|—|S|VDS= -5V,ID= -10A|
|Diode Forward Voltage<br>~~OAS~~|VSD<br>~~VEE~~|—<br>~~VEE~~|-0.7<br>~~VEE~~|-1.0|V|VGS= 0V,IS= -1A|
|**DYNAMIC CHARACTERISTICS(Note 8)**<br>~~a~~<br>~~eee~~|||||||
|Input Capacitance<br>~~a~~<br>~~eee~~|Ciss|—|2246|—|pF|VDS= -15V, VGS= 0V,<br>f = 1.0MHz|
|Output Capacitance<br>~~a~~<br>~~eee~~|Coss|—|352|—|pF||
|Reverse Transfer Capacitance<br>~~a~~<br>~~eee~~|Crss|—|294|—|pF||
|Gate Resistance<br>~~a~~<br>~~eee~~|Rg|—|5.1|—|Ω|VDS= 0V,VGS= 0V,f = 1.0MHz|
|Total Gate Charge(VGS= -4.5V)<br>~~a~~<br>~~eee~~|Qg|—|20.5|—|nC|VGS= -10V, VDS= -15V,<br>ID= -12A<br>~~ee~~|
|Total Gate Charge(VGS= -10V)|Qg|—|41|—|nC||
|Gate-Source Charge|Qgs|—|7.6|—|nC||
|Gate-Drain Charge<br>~~—<—_—~~|Qgd|—|8.0|—<br>~~ee~~|nC<br>~~ee~~||
|Turn-On DelayTime<br>~~—<—_—~~|tD(ON)|—|11.3|—<br>~~ee~~|ns<br>~~ee~~|VDD= -15V, VGS= -10V,<br>RL= 1.25Ω, RG= 3Ω<br>~~ee~~|
|Turn-On Rise Time<br>~~—<—_—~~|tR|—|15.4|—<br>~~ee~~|ns<br>~~ee~~||
|Turn-Off DelayTime<br>~~—<—_—~~|tD(OFF)|—|38.0|—<br>~~ee~~|ns<br>~~ee~~||
|Turn-Off Fall Time<br>~~—<—_—~~|tF|—|22.0|—<br>~~ee~~|ns<br>~~ee~~||



6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 

7. Short duration pulse test used to minimize self-heating effect. 

8. Guaranteed by design. Not subject to product testing. 

2 of 7 **www.diodes.com** 

DMG4407SSS Document number: DS35540  Rev. 7 - 3 

March 2018 © Diodes Incorporated 

**NOT RECOMMENDED FOR NEW DESIGN USE DMP3018SSS** 

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30 30<br>25 25 V DS = -5.0V<br>V      = -10VGS<br>[A)]<br>T [(][N] E 20 [perHe V      = -5.0VGS enne 20 op<br>RR V      = -4.5VGS<br>U<br>C 15 I V      = -4.0VGS F 15<br>[IN] A<br>R<br>D 10 V      = -3.5VGS 10<br>, D Woo— ee<br>- [I] 5 5 T A =T 125A = 150C C TA = 25TA = 85CC<br>TA = -55C<br>0 V      = -3.0VGS 0<br>0 0.5 1.0 1.5 2.0 1.0 1.5 2.0 2.5 3.0 3.5 4.0<br>-V    , DRAIN -SOURCE VOLTAGE (V)DS -VGS, GATE-SOURCE VOLTAGE (V)<br>p a<br>Fig. 1 Typical Output Characteristics Fig. 2  Typical Transfer Characteristics<br>0.03 0.03<br>VGS= -4.5V TA = 150C<br>TTT) SiGe TA = 125C<br>TA = 85C<br>0.02 0.02<br>Ln TA = 25C<br> —<br>rrr rt. eSein TA = -55C<br>0.01 0.01<br>eS OT<br>0 TN 0<br>0 5 10 15 20 25 30 0 5 10 15 20 25 30<br>SaKOW<br>-ID, DRAIN SOURCE CURRENT(A)  -ID, DRAIN SOURCE CURRENT (A)<br>Fig. 3  Typical On-Resistance vs.  C/ Fig. 4  Typical On-Resistance vs.<br>Drain Current and Gate Voltage  Drain Current and Temperature<br>1.7 0.040<br>0.036<br>1.5<br>0.032<br>oy A 0.028 PT EEE<br>1.3<br>OO 0.024 VIDGS  -5=   -4.= A 5V<br>1.1 0.020<br>0.016<br>eH eee<br>0.9<br>a4 0.012 a<br>VGS = -10V<br>0.008 I D   -10= A<br>0.7<br>AT 0.004 eee<br>0.5 0<br>-50 PLETE -25 0 25  ETL 50 75 100 125 150 -50 CEE -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C)<br>Fig. 5  On-Resistance Variation with Temperature Fig. 6  On-Resistance Variation with Temperature<br>, DRAIN CURRENT (A)<br>D<br>-I<br>)<br>, DRAIN-SOURCE ON-RESISTANCE(<br>DS(ON)<br>R<br>)<br>,DRAIN-SOURCE ON-RESISTANCE(<br>R<br>DS(ON)<br>, DRAIN CURRENT (A)<br>D<br>-I<br>, DRAIN-SOURCE<br>R<br>ON-RESISTANCE (Normalized)<br>DS(ON)<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


3 of 7 **www.diodes.com** 

DMG4407SSS Document number: DS35540  Rev. 7 - 3 

March 2018 © Diodes Incorporated 

**DMG4407SSS** 

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NOT RECOMMENDED FOR NEW DESIGN<br>USE DMP3018SSS DMG4407SSS<br>3.0 30<br>2.52.0 er 2520<br>| | |<br>1.5 acai 15 tT<br>1.0 CCE 10 ofaA la7 po<br>0.50 50 RY<br>-50 FLT -25 0 25 50 [E] 75 100 [T] 125 150 0.4 0.6 i 0.8 la | 1.0 1.2<br>TA, AMBIENT TEMPERATURE ((°C) 癈 ) -VSD, SOURCE-DRAIN VOLTAGE (V)<br>Fig. 7 Gate Threshold Variation vs. Ambient Temperature Fig. 8 Diode Forward Voltage vs. Current<br>10,000 10,000<br>—— es ee ee f = 1MHz ———<br>[nA)] (T 1,000 T   = 150°CA<br>ee [N] E >eo T   = 125°CA<br>C iss R Aa |——<br>R<br>U<br>C<br>1,000 Ganner \W525-— 100<br>T   = 85°CA<br>PS Coss Ee L [EAKAGE] a a a<br>, S [S] 10<br>D<br>Crss - [I]<br>4 ’ 7 ~ esee<br>T   = 25°CA<br>100 [LGM , 1 aan<br>0 5 10 15 20 25 30 0 5 10 15 20 25 30<br>-VDS, DRAIN-SOURCE VOLTAGE (V) Yo, -V    , DRAIN-SOURCE VOLTAGE (V)DS<br>Fig. 9 Typical Junction Capacitance C A Fig. 10 Typical Drain-Source Leakage Current vs. Voltage 47) Tt ||<br>ss<br>10 100<br>RDS(on) P W  = 10µs<br>Limited<br>8 ge "aD NEN ST<br>10<br>6 DC<br>in San —_ONININS PW = 10s GN<br>1 PW = 1s<br>PW = 100ms<br>4 | oY re ee P W  = 10ms P W = 1ms LIN FANE NPN<br>la 0.1 r=—orn PPWW = 100 TRS µs  祍<br>2 /| ih ST<br>A= a ee<br>SinglePulse |[ | | Titi tT PT TT<br>0 0.01 a<br>0 5 10 15 20 25 30 35 40 45 0.1 1 10 100<br>Qg, TOTAL GATE CHARGE (nC) -VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 11 Gate-Charge Characteristics Fig. 12 SOA, Safe Operation Area<br>S<br>, SOURCE CURRENT (A)<br>-I<br>GS(TH)<br>, GATE THRESHOLD VOLTAGE(V)<br>V<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(TH)<br>-V<br>, LEAKAGE CURRENT (nA)<br>DSS<br>-I<br>, DRAIN CURRENT (A)<br>D<br>-I<br>GS<br>, GATE-SOURCE VOLTAGE (V)<br>-V<br>**----- End of picture text -----**<br>


4 of 7 **www.diodes.com** 

DMG4407SSS Document number: DS35540  Rev. 7 - 3 

March 2018 © Diodes Incorporated 

**NOT RECOMMENDED FOR NEW DESIGN USE DMP3018SSS** 

**DMG4407SSS** 

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1<br>D = 0.7<br>B D = 0.5 E Np LET<br>a D = 0.3 a a<br>0.1 UI D = 0.1 AUT eet D = 0.9 lh LIME LLM | LI<br>D = 0.05<br>Seng Seiiimsenes acti math meets mein eet<br>D = 0.02<br>HTH HTT RTT<br>0.01 era D = 0.01  |ZA<br>Feee D = 0.005 e ETI TEE RR Duty Cycle, D = t1/ t2 RRDuty Cycle, D = t1 / t2   JA JAθJAθJA  (t) = r(t)  = 72(t) = r(t) * R= 72 癈℃ /W *  R/W JA θJA ATHmull<br>Single Pulse<br>0.001 pul ETE EATEN CHIE EINE 14 ml | alll<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000<br>t1, PULSE DURATION TIMES (sec)<br>t1, PULSE DURATION TIME (sec)<br>Fig. 13  Transient Thermal Resistance<br>Fig. 13 Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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DMG4407SSS Document number: DS35540  Rev. 7 - 3 

March 2018 © Diodes Incorporated 

**www.diodes.com** 

**NOT RECOMMENDED FOR NEW DESIGN USE DMP3018SSS** 

**DMG4407SSS** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **SO-8** 

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SO-8<br>Dim  Min  Max  Typ<br>A  1.40  1.50  1.45<br>A1  0.10  0.20  0.15<br>E<br>b  0.30  0.50  0.40<br>c  0.15  0.25  0.20<br>1 D  4.85  4.95  4.90<br>E  5.90 6.10 6.00<br>E1  3.80 3.90 3.85<br>E0  3.85 3.95 3.90<br>b e  --  --  1.27<br>E1<br>h  -  --  0.35<br>h<br>L   0.62  0.82  0.72<br>Q<br>Q 0.60  0.70  0.65<br>7°<br>c All Dimensions in mm<br>A 4°± 3°<br>G auge Plane<br>S eating Plane<br>L<br>e A1 E0<br>D<br>Suggested Pad Layout<br>Please see http://www.diodes.com/package-outlines.html for the latest version.<br>SO-8<br>X1<br>Dimensions Valueensions Valuensions Valuesions Valueions Valueons Valuens Values Value Valuealuelueue (in mm)in mm))<br>C 1.27<br>X  0.802 .802 802 2<br>X1  4.612 612 12<br>Y  1.505505<br>oe<br>Y1  6.50.5050<br>Y1<br>Y<br>SoM: C X<br>9° (All sides)<br>R 0.1<br>45°<br>**----- End of picture text -----**<br>


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Dimensions Valueensions Valuensions Valuesions Valueions Valueons Valuens Values Value Valuealuelueue (in mm)in mm))<br>C 1.27<br>X  0.802 .802 802 2<br>X1  4.612 612 12<br>Y  1.505505<br>Y1  6.50.5050<br>**----- End of picture text -----**<br>


6 of 7 **www.diodes.com** 

DMG4407SSS Document number: DS35540  Rev. 7 - 3 

March 2018 © Diodes Incorporated 

**NOT RECOMMENDED FOR NEW DESIGN USE DMP3018SSS** 

**DMG4407SSS** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings » noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. **LIFE SUPPORT** Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: we A.   Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or WD 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. SNE Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its oN representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2018, Diodes Incorporated **www.diodes.com** SE 

7 of 7 **www.diodes.com** 

DMG4407SSS Document number: DS35540  Rev. 7 - 3 

March 2018 © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/DMG4407SSS-13/power-mosfet-p-channel-30-v-99-a-9000-ohm-soic)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/dmg4407sss-13/mosfet-p-ch-30v-9-9a-soic/dp/3943491)
---

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