# Power MOSFET, P Channel, 20 V, 4 A, 0.031 ohm, SOT-23, Surface Mount

![Product image](https://novapart.co/image/farnell:3943490RL/)

**URL**: https://novapart.co/products/DMG3415UQ-7/power-mosfet-p-channel-20-v-4-a-0031-ohm-sot-23
**SKU**: DMG3415UQ-7
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.1520
**Stock**: 1000+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | AEC-Q101 |
| Power Dissipation | 900mW |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 4.5V |
| Transistor Case Style | SOT-23 |
| Drain Source Voltage Vds | 20V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 4A |
| Drain Source On State Resistance | 0.031ohm |
| Gate Source Threshold Voltage Max | 550mV |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943490RL/)

|**DMG3415U**<br>**P-CHANNEL ENHANCEMENT MODE MOSFET**<br>**NOT RECOMMENDED FOR NEW DESIGN**<br>**USEDMP2045U**<br>popes ~~|~~|BL|**DMG3415U**<br>**P-CHANNEL ENHANCEMENT MODE MOSFET**<br>**NOT RECOMMENDED FOR NEW DESIGN**<br>**USEDMP2045U**<br>popes ~~|~~|BL|**DMG3415U**<br>**P-CHANNEL ENHANCEMENT MODE MOSFET**<br>**NOT RECOMMENDED FOR NEW DESIGN**<br>**USEDMP2045U**<br>popes ~~|~~|BL|**DMG3415U**<br>**P-CHANNEL ENHANCEMENT MODE MOSFET**<br>**NOT RECOMMENDED FOR NEW DESIGN**<br>**USEDMP2045U**<br>popes ~~|~~|BL|**DMG3415U**<br>**P-CHANNEL ENHANCEMENT MODE MOSFET**<br>**NOT RECOMMENDED FOR NEW DESIGN**<br>**USEDMP2045U**<br>popes ~~|~~|BL|**DMG3415U**<br>**P-CHANNEL ENHANCEMENT MODE MOSFET**<br>**NOT RECOMMENDED FOR NEW DESIGN**<br>**USEDMP2045U**<br>popes ~~|~~|BL|
|---|---|---|---|---|---|
|**Product Summary**|||**Features**|||
|||||||
|**BVDSS**|**RDS(ON) max**||**ID**<br>**TA = +25°C**<br><br>Low On-Resistance<br><br>Low Input Capacitance|||
|-20V|42.5mΩ@VGS= -4.5V<br>71mΩ@VGS= -1.8V||-4.0A<br>-2.0A<br><br>Fast Switching Speed<br><br>Low Input/Output Leakage|||



## **Product Summary** 

- **ESD Protected Up To 3kV** 

## **Description** 

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

- **PPAP Capable (Note 4)** 

## **Mechanical Data** 

## **Applications** 

- DC-DC Converters 

- Power Management Functions 

- Case: SOT23 

- Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminals: Finish ⎯ Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 **e3** 

- Terminals Connections: See Diagram Below 

**==> picture [484 x 215] intentionally omitted <==**

**----- Start of picture text -----**<br>
 Weight: 0.008 grams (Approximate)<br>D<br>SOT23<br>D<br>G<br>G S<br>ESD PROTECTED TO 3kV<br>AB wwe<br>Top View  Gate Protection Diode S<br>Top View<br>Internal Schematic<br>Equivalent Circuit<br>g Information Information (Note 5)<br>Part Number  Compliance  Case  Packaging<br>DMG3415U-7  Standard  SOT23  3,000/Tape & Reel<br>DMG3415UQ-7  Automotive  SOT23  3,000/Tape & Reel<br>DMG3415U-13 Standard SOT23 10,000/Tape & Reel<br>1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.<br>2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and<br> Lead-free.<br>**----- End of picture text -----**<br>


## **Ordering Information Information** (Note 5) 

- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. For more information, please refer to https://www.diodes.com/quality/. 

   5. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

34P = Product Type Marking Code YM or       = Date Code Marking  Y or    = Year (ex: F = 2018) 7 Y YM M = Month (ex: 9 = September) Date Code Key **Year 2018 2019 2020 2021 2022 2023 2024 Code** F G H I J K L ~~__—— |] |~~ **Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec** ~~ee~~ **Code** 1 2 3 4 5 6 7 8 ~~ee~~ 9 O N D DMG3415U 1 of 7 March 2018 Document number: DS31735  Rev. 13 - 3 **www.diodes.com** © Diodes Incorporated 

**NOT RECOMMENDED FOR NEW DESIGN USE DMP2045U** 

**DMG3415U** 

**Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|
|||||||
|**Characteristic**|||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage|||VDSS|-20|V|
|Gate-Source Voltage|||VGSS|±8|V|
|Continuous Drain Current (Note 6) VGS= -4.5V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|-4.0<br>-3.5|A|
|Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%)|||IDM|-30|A|



## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics**(@TA= +25°C, unless otherwise specified.)|= +25°C, unless otherwise specified.)|= +25°C, unless otherwise specified.)|= +25°C, unless otherwise specified.)||||
|---|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS(Note 7)**|||||||
|Drain-Source Breakdown Voltage|BVDSS|-20|—|—|V|VGS= 0V, ID= -250µA|
|Zero Gate Voltage Drain Current|IDSS|—|—|-1|µA|VDS= -20V, VGS= 0V|
|Gate-Source Leakage|IGSS|—|—|±10|µA|VGS= ±8.0V, VDS= 0V|
|**ON CHARACTERISTICS(Note 7)**|||||||
|Gate Threshold Voltage<br>~~rok].~~|VGS(TH)<br>~~rok].~~|-0.3<br>~~rok].~~|-0.55<br>~~rok].~~|-1.0<br>~~rok].~~|V<br>~~rok].~~|VDS= VGS, ID= -250μA<br>~~rok].~~|
|Static Drain-Source On-Resistance<br>~~rok].~~|RDS(ON)<br>~~rok].~~|—<br>~~rok].~~|31<br>~~rok].~~|42.5<br>~~rok].~~|mΩ<br>~~rok].~~|VGS= -4.5V, ID= -4.0A<br>~~rok].~~|
|||—<br>~~rok].~~|40<br>~~rok].~~|53<br>~~rok].~~||VGS= -2.5V, ID= -3.5A<br>~~rok].~~|
|||—<br>~~rok].~~|51<br>~~rok].~~|71<br>~~rok].~~||VGS= -1.8V, ID= -2.0A<br>~~rok].~~|
|Forward Transfer Admittance<br>~~rok].~~||gFS|<br>~~rok].~~|—<br>~~rok].~~|3<br>~~rok].~~|—<br>~~rok].~~|S<br>~~rok].~~|VDS= -5V, ID= -4A<br>~~rok].~~|
|**DYNAMIC CHARACTERISTICS(Note 8)**|||||||
|Input Capacitance<br>~~=O~~|Ciss<br>~~=O~~|—<br>~~=O~~|294<br>~~=O~~|—<br>~~=O~~|pF<br>~~=O~~|VDS= -10V, VGS= 0V<br>f = 1.0MHz<br>~~=O~~|
|Output Capacitance<br>~~=O~~|Coss<br>~~=O~~|—<br>~~=O~~|104<br>~~=O~~|—<br>~~=O~~|pF<br>~~=O~~||
|Reverse Transfer Capacitance<br>~~=O~~|Crss<br>~~=O~~|—<br>~~=O~~|25<br>~~=O~~|—<br>~~=O~~|pF<br>~~=O~~||
|Gate Resistance<br>~~=O~~|Rg<br>~~=O~~|—<br>~~=O~~|250<br>~~=O~~|—<br>~~=O~~|Ω<br>~~=O~~|VDS= 0V, VGS= 0V, f = 1.0MHz<br>~~=O~~|
|**SWITCHING CHARACTERISTICS(Note 8)**|||||||
|Total Gate Charge|Qg|—|9.1|—|nC|VGS= -4.5V, VDS= -10V<br>ID= -4A|
|Gate-Source Charge|Qgs|—|1.5|—|nC||
|Gate-Drain Charge|Qgd|—|1.7|—|nC||
|Turn-On DelayTime|tD(ON)|—|71|—|ns|VDS= -10V, VGS= -4.5V,<br>RD= 2.5Ω, RG= 3.0Ω, ID= -1A|
|Turn-On Rise Time|tR|—|117|—|ns||
|Turn-Off DelayTime|tD(OFF)|—|795|—|ns||
|Turn-Off Fall Time|tF|—|393|—|ns||



## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

- Notes: 6. Device mounted on FR-4 substrate PC board, with minimum recommended pad layout. 

   7. Short duration pulse test used to minimize self-heating effect. 

   8. Guaranteed by design. Not subject to production testing. 

2 of 7 **www.diodes.com** 

DMG3415U Document number: DS31735  Rev. 13 - 3 

March 2018 © Diodes Incorporated 

**NOT RECOMMENDED FOR NEW DESIGN USE DMP2045U** 

**DMG3415U** 

**==> picture [483 x 669] intentionally omitted <==**

**----- Start of picture text -----**<br>
20 V     = -4.5VGS 20<br>V     = -3.5VGS<br>V     = -3.0VGS<br>16 V     = -2.5VGS 16 V     = -5VDS<br>[A)] V     = -2.0VGS )<br>T [(]<br>[N] E N [T(A]<br>R 12 12<br>R<br>U a ff<br>C<br>C [URRE]<br>[IN] RA 8 I [N] 8<br>D<br>D [RA]<br>I, D fo V     = -1.5VGS , D ok<br>I<br>4 4 T   = 150°CA<br>T   = 125°CA T   = 85°CA<br>T   = 25°CA<br>0 | 0 oe T   = -55°CA<br>0 1 2 3 4 5 0.5 1 1.5 2 2.5<br>V    , DRAIN-SOURCE VOLTAGE (V)DS V    , GATE-SOURCE VOLTAGE (V)GS<br>Fig. 1 Typical Output Characteristic Fig. 2  Typical Transfer Characteristic<br>) 0.08 ) 0.08<br>(<br>[(] CE 0.07 "TILL N [CE] «Ug 0.07 V     = -4.5VGS<br>T [A]<br>0.06 ee ee I [S] S N 0.06 O<br>[SISTAN] E T   = 150°CA<br>- [R] 0.05 ak N [RE] N [-] 0.05 o a<br>[N] OE V     = -2.5VGS O T   = 125°CA<br>CR 0.04 0.04 T   = 85°CA<br>——T T Us U [RCE] ———— ——<br>0.03 V     = -4.5VGS O 0.03 T   = 25°CA<br>- [SOU] T E [S] _—-eEOE= E_ _<br>[IN] A I [N-] T   = -55°CA<br>R 0.02 0.02<br>D D [RA]<br>, ( [ON)] 0.01 Og , O [N)] 0.01<br>D [S] [S(] D<br>R 0 R 0<br>0 4 8 12 16 20 0 4 8 12 16 20<br>OX I  , DRAIN-SOURCE CURRENT (A)D NO I  , DRAIN CURRENT (A)D<br>Fig. 3  Typical On-Resistance Fig. 4 Typical On-Resistance<br>vs. Drain Current and Gate Voltage  vs. Drain Current and Temperature<br>1.6 ) 0.08<br>(<br>E<br>C 0.07<br>D [)] N<br>1.4 A<br>Cy T Sannnne<br>ECR L [IZE] A I [S] S 0.06<br>E<br>O [U] - [S] 1.2 - [R] O [N] 0.05 V     = -2.5VGSI   = -5AD<br>( [NORM]<br>I [N] ARD N [CE] MOF ECR 0.04 T =<br>,R [SON] D T [A] I [S] S 1.0 TTT) V     = -4.5VI   = -10AGSD a O [U] - [S] I [N] A 0.03 aEeeLTT V     = -4.5VI   = -10AGSD Rr [<br>R 0.02<br>O [N-RE] 0.8 a V     = -2.5V ATT?) GSI   = -5AD D, O [N] S 0.01 ECE Eee<br>D<br>R<br>0.6 sacen 0 PtEEL| | i ft [fd]<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>T  , AMBIENT TEMPERATURE (°C)A T  , AMBIENT TEMPERATURE (°C)A<br>Fig. 5 On-Resistance Variation with Temperature Fig. 6 On-Resistance Variation with Temperature<br>, DRAIN CURRENT (A) ID , DRAIN CURRENT (A) ID<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)  , DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON) DS(ON)<br>R R<br>(NORMALIZED)<br>, DRAIN-SOURCE ON-RESISTANCE<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON)<br>R<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


3 of 7 **www.diodes.com** 

DMG3415U 

March 2018 

© Diodes Incorporated 

Document number: DS31735  Rev. 13 - 3 

**NOT RECOMMENDED FOR NEW DESIGN USE DMP2045U** 

**DMG3415U** 

**==> picture [490 x 676] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.2 20<br>18<br>[V)] —CCEPT Tin<br>[E(] G 16 STEEP<br>T [A] 0.9 ) [A] (T 14<br>N<br>DV [OL] a ER 12 CEE<br>R<br>U<br>0.6 a= I   = -1mAD CE 10 Cee(CECEeee<br>C<br>T [HRESHOL] I   = -250µAD RO [U] 8 T   = 25°CA<br>SL S 6 A<br>G [ATE] 0.3 NN I [,] S gy<br>, ) 4<br>( [TH]<br>G [S] 2<br>V<br>0 PLELE LENN 0 7 iN2Z<br>-50 -25 0 25 50 75 100 125 150 0.2 0.4 an. 0.6  A 0.8 1 1.2<br>T  , AMBIENT TEMPERATURE (°C)A V    , SOURCE-DRAIN VOLTAGE (V)SD<br>Fig. 7 Gate Threshold Variation vs. Ambient Temperature Fig. 8 Diode Forward Voltage vs. Current<br>4 NN, lan<br>100,000 100 RRDSDS(ON) (on)<br>LimitedLimited<br>)A 10,000 T   = 150°CA 10<br>T [(n]<br>N<br>ER T   = 125°CA<br>RU 1,000 DC<br>C 1 PW=10s<br>G [E] A T   = 85°CA PW=1s<br>KA 100 PW=100ms<br>EL es a a ed PW=10ms NANWTIKR ETT<br>, 0.1 PW=1ms<br>D [SS] ee cn To TTJ(Max)J(Max)=150 = 150°C  ℃ BSS TIT<br>I 10 TTAA=25 = 25°C  ℃ PPWW=100µs =100us<br>T   = 25°CA VSingle Pulse VSingle PulseGSGS=10V = -10V<br>1 S e aw ae to 7 Se. T   = -55°CA  S\ 0.01 Ne DUT on 1DUT on 1*MRP board*MRP Board  A<br>2 4 6 8 LY, 10 12 14 16 18 20 0.1 1 10 100<br>V    , DRAIN-SOURCE VOLTAGE (V) DS VDS, DRAIN-SOURCE VOLTAGE (V) VDS, Drain-Source Voltage (V)<br>Fig. 9 Typical Leakage Current vs. Drain-Source Voltage<br>Fig. 10 SOA, Safe Operation Area<br>4.5<br>4<br>PNN| KROL YY<br>3.5 VDS = -10V<br>ID = -4.5A<br>“N 3 TCyANDYK-<br>nee 2.5<br>2 EEN TT<br>1.5 EEA TTT<br>1 Sanne<br>0.5<br>ATT TTT<br>0 AGGEEEEEEE<br>0 1 2 3 4 5 6 7 8 9 10<br>QQgg, TOTAL GATE CHARGE (nC), TOTAL GATE CHARGE (nC)<br>Figure 11 Gate ChargeFig. 11 Gate Charge<br>, SOURCE CURRENT (A)<br>, GATE THRESHOLD VOLTAGE (V)  IS<br>GS(TH)<br>V<br>, DRAIN CURRENT (A)<br>, LEAKAGE CURRENT (nA) IDSS ID<br>, GATE-SOURCE VOLTAGE (V)<br>GS<br>V<br>, Drain Current (A)<br>ID<br>GS<br> GATE THRESHOLD VOLTAGE (V)<br>V<br>**----- End of picture text -----**<br>


4 of 7 **www.diodes.com** 

DMG3415U Document number: DS31735  Rev. 13 - 3 

March 2018 © Diodes Incorporated 

**NOT RECOMMENDED FOR NEW DESIGN USE DMP2045U DMG3415U** — 

**==> picture [443 x 222] intentionally omitted <==**

**----- Start of picture text -----**<br>
1 SS SS —— See<br>te D = 0.7<br>D = 0.5<br>TICEA TTT Lee OTTttOTTett te<br>PTH D = 0.3 ee cc |<br>TTT TTT PTH<br>0.1 7a<br>Fr D = 0.1<br>H—1| + er D = 0.9 ee ee<br>D = 0.05<br>ee HN——LAMig | a A RθJA R (t) = r(t) * RJA (t) = r(t) * θJA  R JA meenmall<br>D = 0.02 RθJA R  = 171 JA  = 171°C/W ℃ /W<br>tA TI] maa<br>0.01 P(pk)<br>FBRlM D = 0.01 7M LU UL) t1 eeeeet<br>TT a it + t2 meena<br>D = 0.005 T J T - T J  - T A  = P * R A  = P * R θJA  (t)  JA (t)<br>eeHLAa cee dn] cad cdtt Duty Cycle, D = t Duty Cycle, D = t1  / t 1/t22 |mallTTT<br>D = Single Pulse<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000<br>t1, PULSE DURATION TIME (s)t1, PULSE DURATION TIME (s)<br>Figure 12 Transient Thermal ResponseFig. 12 Transient Thermal Response<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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DMG3415U Document number: DS31735  Rev. 13 - 3 

March 2018 

**www.diodes.com** 

© Diodes Incorporated 

**NOT RECOMMENDED FOR NEW DESIGN USE DMP2045U** 

**DMG3415U** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **SOT23** 

**==> picture [484 x 415] intentionally omitted <==**

**----- Start of picture text -----**<br>
All 7°<br>H<br>SOT23<br>GAUGE PLANE<br>0.25 Dim  Min  Max  Typ<br>J A  0.37  0.51  0.40<br>K1 neo K a B  1.20  1.40  1.30<br>ee ry = ie C  2.30  2.50  2.40<br>a D  0.89  1.03  0.915<br>A M F  0.45  0.60  0.535<br>L L1 G  1.78  2.05  1.83<br>=<br>H  2.80  3.00  2.90<br>o of =a J  0.013 0.10 0.05<br>K  0.890 1.00 0.975<br>C B K1  0.903 1.10 1.025<br>L  0.45 0.61  0.55<br>Lo == L1  0.25  0.55  0.40<br>M  0.085 0.150  0.110<br>a  0°  8°  --<br>D<br>All Dimensions in mm<br>F G<br>TT a<br>Suggested Pad Layout<br>Please see http://www.diodes.com/package-outlines.html for the latest version.<br>SOT23<br>Y Dimensions  Value (in mm)<br>C  2.0<br>X  0.8<br>Y1 & C X1  1.35<br>Y  0.9<br>Y1  2.9<br>LES<br>Ce, X X1<br>**----- End of picture text -----**<br>


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DMG3415U Document number: DS31735  Rev. 13 - 3 

March 2018 © Diodes Incorporated 

**NOT RECOMMENDED FOR NEW DESIGN USE DMP2045U** 

**DMG3415U** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings » noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. **LIFE SUPPORT** Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: we A.   Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or WD 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. NE Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its Px representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2018, Diodes Incorporated **www.diodes.com** &E 

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> specialises in exactly the cases where availability is the real problem: stock
> shortages, allocation crises, end-of-life components, and cost-reduction
> alternatives. They guarantee delivery even during supply chain disruptions and
> typically respond to quote requests within one business day.
> [Request a quote](https://novapart.co/quote/) — it's free and there's no
> minimum order.
