# Power MOSFET, P Channel, 16 V, 2.5 A, 0.031 ohm, X2-DFN2015, Surface Mount

![Product image](https://novapart.co/image/farnell:3943489RL/)

**URL**: https://novapart.co/products/DMG3415UFY4Q-7/power-mosfet-p-channel-16-v-25-a-0031-ohm-x2
**SKU**: DMG3415UFY4Q-7
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.1100
**Stock**: 1000+
**Lead Time**: 134 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | AEC-Q101 |
| Power Dissipation | 650mW |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 4.5V |
| Transistor Case Style | X2-DFN2015 |
| Drain Source Voltage Vds | 16V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 2.5A |
| Drain Source On State Resistance | 0.031ohm |
| Gate Source Threshold Voltage Max | 550mV |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943489RL/)

**DMG3415UFY4Q** ~~>~~ **P-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|
|**V(BR)DSS**<br>**RDS(ON) max**<br>**ID max**<br>**TA = +25°C**<br>-16V<br>39mΩ @ VGS= -4.5V<br>-2.5A<br>52mΩ @ VGS= -2.5V<br>-2.1A<br>65mΩ @ VGS= -1.8V<br>-1.8A|||
|**V(BR)DSS**|**RDS(ON) max**|**ID max**<br>**TA = +25°C**|
|-16V|39mΩ @ VGS= -4.5V|-2.5A|
||52mΩ @ VGS= -2.5V|-2.1A|
||65mΩ @ VGS= -1.8V|-1.8A|



## **Features and Benefits** 

- Low On-Resistance 

- Low Input Capacitance 

- Fast Switching Speed 

- Low Input/Output Leakage 

- ESD Protected Up To 3kV 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

- **PPAP Capable (Note 4)** 

## **Description and Applications** 

## **Mechanical Data** 

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. 

   - Case: X2-DFN2015-3 

   - Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

- Backlighting 

   - Moisture Sensitivity: Level 1 per J-STD-020 

- Power Management Functions 

- Terminals: Finish  NiPdAu over Copper Leadframe. Solderable per MIL-STD-202, Method 208 **e4** 

**==> picture [501 x 211] intentionally omitted <==**

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 DC-DC Converters  per MIL-STD-202, Method 208   e4<br> Terminals Connections: See Diagram Below<br> Weight: 0.008 grams (Approximate)<br>D<br>S<br>G<br>D<br>G<br>ESD PROTECTED TO 3kV<br>Gate Protection<br>DOe Top View  Bottom View  Internal Schematic  |& Diode S<br>(Top View)  Equivalent Circuit<br>Ordering Informationg Information Information (Note 5)<br>Part Number Case Packaging<br>DMG3415UFY4Q-7  X2-DFN2015-3 3,000/Tape & Reel<br>**----- End of picture text -----**<br>


## **Ordering Informationg Information Information** (Note 5) 

- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 

   2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html. 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. 

## **Marking Information** 

34P = Marking Code **34P** YM = Date Code Marking Y = Year (ex: C = 2015) **YM** M = Month (ex: 9 = September) “| Date Code Key **Year 2009** ~ **2015 2016 2017 2018 2019 2020 2021** ~~————~~ **Code** W ~ C D E F G H I **Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec** ~~SS~~ **Code** 1 2 3 4 5 6 7 8 9 O N D DMG3415UFY4Q 1 of 6 January 2016 Document number: DS38608  Rev. 1 - 2 **www.diodes.com** © Diodes Incorporated 

**DMG3415UFY4Q** 

**Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

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|||||||
|---|---|---|---|---|---|
|Characteristic|Symbol|Value|Unit|
|Drain-Source Voltage|VDSS|-16|V|
|Gate-Source Voltage|VGSS|±8|V|
|Continuous Drain Current (Note 7) VGS = -4.5V|Steady State|TTAA = +25°C  = +70°C|ID|-2.5 -2.2|A|
|Pulsed Drain Current (Note 7)|IDM|-12|A|

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**Thermal Characteristics** 

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||||||
|---|---|---|---|---|
|OO|Characteristic|Symbol|Value|Unit|
|OX|Total Power Dissipation (Note 6)|PD|W|
|eG|Thermal Resistance, Junction to Ambient (Note 6)|Steady  State|RJA|°C/W|
|8|Total Power Dissipation (Note 7)|PD|W|
|Steady|
|a|Thermal Resistance, Junction to Ambient (Note 7)|State|RJA|°C/W|
|a|Thermal Resistance, Junction to Case (Note 7)|RJC|
|QO|Operating and Storage Temperature Range|TJ, TSTG|-55 to +150|°C|

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**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

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||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|
|DD|Characteristic|Symbol|Min|Typ|GO|Max|(OO|Unit|Test Condition|
|Ce|OFF CHARACTERISTICS (Note 8)|
|GOGD|Drain-Source Breakdown VoltaZero Gate Voltage Drain Current                Tge|J = +25C|BVIDSSDSS|-16 |QODO||-1.0 |µV A|OOOO|VVGSDS = -16V = 0V, ID, V = -250GS = 0V µA|
|Gate-Source Leakage|IGSS|||±500 ±10|µA nA|VVGSGS =  = 8V, V5V, VDSDS = 0V  = 0V|
|Ce|ON CHARACTERISTICS (Note 8)|
|GD|Gate Threshold Voltage|VGS(TH)|-0.3|-0.55|-1.0|V|VDS = VGS, ID = -250µA|
|GO|OO|
|31|39|VGS = -4.5V, ID = -4.0A|
|ee|PO|
|Static Drain-Source On-Resistance|RDS(ON)||40|52|mΩ|VGS = -2.5V, ID = -3.5A|
|ee|PO|
|51|65|VGS = -1.8V, ID = -2.0A|
|ee|PO|
|GD|Forward Transfer Admittance||Yfs|||GO|7.9||S|VDS = -5V, ID = -2.5A|
|Ce|DYNAMIC CHARACTERISTICS (Note 9)|
|a|Input Capacitance|Ciss||282||pF|
|GO|Output Capacitance|Coss||152||pF|Vf = 1.0MHz DS = -10V, VGS = 0V|
|GO|Reverse Transfer Capacitance|Crss||38||pF|
|OO|Gate Resistance|Rg||250||Ω|VDS = 0V, VGS = 0V, f = 1.0MHz|
|Total Gate Charge|Qg||10||nC|
|a|GO|
|GO|Gate-Source Charge|Qgs||1.5||nC|VGS = -4.5V, VDS = -10V, ID = -4A|
|GO|Gate-Drain Charge|Qgd||2.4||nC|
|Turn-On Delay Time|tD(ON)||79||ns|
|Turn-On Rise Time|tR||175||ns|VDS = -10V, VGS = -4.5V,|
|a|
|GO|Turn-Off Delay Time|tD(OFF)||885||ns|RD = 2.5Ω, RG = 3.0Ω|
|GO|Turn-Off Fall Time|tF||568||ns|

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- Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 

   7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 

   8. Short duration pulse test used to minimize self-heating effect. 

   9. Guaranteed by design. Not subject to product testing. 

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**DMG3415UFY4Q** 

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20 V GS= -4.5V 20<br>VGS = -3.5V<br>V GS= -3.0V<br>16 V GS= -2.5V 16 V     = -5VDS<br>) [A] T [(] V GS= -2.0V [A)]<br>N<br>E<br>R 12 12<br>R<br>U<br>C<br>C [URRENT(]<br>I [N] AR 8 | 8 ff<br>D<br>D [RAIN]<br>,I D V GS= -1.5V , D<br>I<br>4 4 T   = 150°CA<br>T   = 125°CA T   = 85°CA<br>T   = 25°CA<br>0 0 T   = -55°CA<br>0 1 2 3 4 5 0.5 1 1.5 2 2.5<br>VDS, DRAIN-SOURCE VOLTAGE (V) V    , GATE-SOURCE VOLTAGE (V)GS<br>Fig. 1 Typical Output Characteristic Fig. 2 Typical Transfer Characteristic<br>) 0.08 ) 0.08<br>[(] E [(] E<br>C 0.07 C 0.07 V     = -4.5VGS<br>[N] A<br>0.06 0.06<br>[SISTAN] E [SIST] E T   = 150°CA<br>- [R] 0.05 - [R] 0.05<br>[N] OE VGS = -2.5V [N] OE T   = 125°CA<br>CR 0.04 CR 0.04 T   = 85°CA<br>- [SOU] 0.03 V GS= -4.5V - [SOU] 0.03 T   = 25°CA<br>[IN] A [IN] A T   = -55°CA<br>R 0.02 R 0.02<br>D D<br>, , )<br>0.01 0.01<br>R( [ON)] D [S] 0 == R( [ON] SD 0<br>0 4 8 12 16 20 0 4 8 12 16 20<br>ID, DRAIN-SOURCE CURRENT (A) I  , DRAIN CURRENT (A)D<br>Fig. 3 Typical On-Resistance  Fig. 4 Typical On-Resistance<br>vs. Drain Current and Gate Voltage  vs. Drain Current and Temperature<br>1.6 ) 0.08<br>(<br>) N [CE] 0.07<br>1.4<br>T [A]<br>ECR L [IZED] AM I [S] S 0.06<br>O [U] - [S] 1.2 [RE] O [N-] 0.05 V     = -2.5VGSI   = -5AD<br>( [NOR]<br>I [N] A 0.04<br>RD N [CE]<br>,R [SON] D T [A] I [S] S 1.0 V I GSD = -10A= -4.5V O [URCE][S] I [N-] 0.03 V     = -4.5VI   = -10AGSD<br>0.02<br>O [N-RE] 0.8 V GS= -2.5V D [RA]<br>I D = -5A , 0.01<br>[SON] D<br>R<br>0.6 0<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TA, AMBIENT TEMPERATURE (°C) T  , AMBIENT TEMPERATURE (°C)A<br>Fig. 5 On-Resistance Variation with Temperature Fig. 6 On-Resistance Variation with Temperature<br>, DRAIN CURRENT (A) ID , DRAIN CURRENT (A) ID<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)  , DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON) DS(ON)<br>R R<br>, DRAIN-SOURCE<br>DS(ON)<br>R<br>ON-RESISTANCE (NORMALIZED)  , DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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January 2016 

© Diodes Incorporated 

Document number: DS38608  Rev. 1 - 2 

**DMG3415UFY4Q** 

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1.2 20<br>[V)] 18<br>[E(] G 16<br>T [A] 0.9<br>14<br>V [OL]<br>D 12<br>O [L]<br>0.6 —_ I   = -1mAD 7 10 PEt tT eee<br>[SH] E<br>R<br>T [H] I   = -250µAD 8 TA = 25°C TA = 25 癈<br>6<br>y s Sg CEE A<br>G [ATE] 0.3 “NN<br>NN PPLE AL<br>, ) 4<br>( [T] [H]<br>G [S] 2<br>V<br>0 0<br>Pt |eerET<br>-50 -25 0 25 50 75 100 125 150 0.2 0.4 0.6 0.8 1 1.2<br>T  , AMBIENT TEMPERATURE (°C)A VSD, SOURCE-DRAIN VOLTAGE (V)<br>Fig. 7 Gate Threshold Variation vs. Ambient Temperature Fig. 8 Diode Forward Voltage vs. Current<br>, SOURCE CURRENT (A)<br>IS<br>, GATE THRESHOLD VOLTAGE (V) )<br>GS(T<br>V<br>**----- End of picture text -----**<br>


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100,000<br>a<br>a a<br>[nA)] 10,000 e e T   = 150°CA<br>T [(]<br>— —<br>[N] RE T   = 125°CA<br>RU 1,000 Ujj fj ft n<br>C<br>eeee ee<br>T   = 85°CA<br>100 ee es eeee<br>L [EAKAGE] es<br>, S a A CC<br>D [S]<br>I 10 jj ff | ft |<br>S e T   = 25°CA<br>T   = -55°CA<br>1 aeee n e ee————<br>2 4 6 8 10 12 14 16 18 20<br>V    , DRAIN-SOURCE VOLTAGE (V) DS<br>Fig. 9 Typical Leakage Current vs. Drain-Source Voltage<br>1<br>D = 0.7<br>D = 0.5<br>ee<br>1 ac<br>D = 0.3<br>TUTTI LTT HITT<br>0.1 AIIM AT Sha, I TE TIM LT<br>D = 0.1<br>eer D = 0.9 eee<br>D = 0.05<br>A RJA(t) = r(t)  * RJA Coco<br>RR JAJA = 171 = 171°C/W  癈 /W<br>D = 0.02<br>SereHE eA ml<br>0.01 Aere D = 0.01 MN MAGNTS-COUIIGMMNIUIIEMeA I NARI P(pk) VIEL) t1 aiSu<br>a > eam eee eee<br>AM a cc TT j+—__+>| t2 PTTT TTTTri<br>D = 0.005 T J  - T A  = P * R JA (t)<br>lHEAST I Duty Cycle, D = t 1 /t 2 TTTml<br>D = Single Pulse<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000<br>t1, PULSE DURATION TIME (s)<br>Fig. 10 Transient Thermal Response<br>, LEAKAGE CURRENT (nA)<br>IDSS<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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DMG3415UFY4Q Document number: DS38608  Rev. 1 - 2 

January 2016 © Diodes Incorporated 

**www.diodes.com** 

**DMG3415UFY4Q** 

## **Package Outline Dimensions** 

Please see AP02001 at http://www.diodes.com/_files/datasheets/ap02001.pdf for the latest version. 

## **X2-DFN2015-3** 

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A3<br>A<br>SEATING PLANE X2-DFN2015-3<br>Dim  Min  Max  Typ<br>lool} A1 D —— A  -  0.40 -<br>z A1  0 0.05 0.02<br>fa I<br>A3  -  -  0.13<br>e L b  0.20 0.30 0.25<br>D  1.45 1.575 1.5<br>D2  1.00 1.20 1.10<br>ee an e  -  -  0.50<br>E E2 E  1.95 2.075 2.00<br>D2 E2  0.70 0.90 0.80<br>L  0.25 0.35 0.30<br>z  -  -  0.125<br>All Dimensions in mm<br>b<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see AP02001 at http://www.diodes.com/_files/datasheets/ap02001.pdf for the latest version. 

## **X2-DFN2015-3** 

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**----- Start of picture text -----**<br>
X<br>Y1<br>Y2<br>X1<br>G Y(2x)<br>oo) C<br>**----- End of picture text -----**<br>


|**X2-DFN2015-3**|**X2-DFN2015-3**|
|---|---|
|**Dimensions**|**Value**<br>**(in mm)**|
|**C**|**()**<br>1.000|
|**G**|0.150|
|**X**|0.310|
|**X1**|1.300|
|**Y**|0.500|
|**Y1**|0.650|
|**Y2**|0650<br>1.000|



5 of 6 **www.diodes.com** 

DMG3415UFY4Q Document number: DS38608  Rev. 1 - 2 

January 2016 © Diodes Incorporated 

**DMG3415UFY4Q** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDING TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the        failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2016, Diodes Incorporated 

**www.diodes.com** 

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## Links

- [View this product on Novapart](https://novapart.co/products/DMG3415UFY4Q-7/power-mosfet-p-channel-16-v-25-a-0031-ohm-x2)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/dmg3415ufy4q-7/mosfet-p-ch-16v-2-5a-x2-dfn2015/dp/3943489RL)
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