# Power MOSFET, P Channel, 20 V, 3 A, 0.073 ohm, SOT-23, Surface Mount

![Product image](https://novapart.co/image/farnell:3943487/)

**URL**: https://novapart.co/products/DMG3413L-7/power-mosfet-p-channel-20-v-3-a-0073-ohm-sot-23
**SKU**: DMG3413L-7
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.1040
**Stock**: 1000+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 700mW |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 4.5V |
| Transistor Case Style | SOT-23 |
| Drain Source Voltage Vds | 20V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 3A |
| Drain Source On State Resistance | 0.073ohm |
| Gate Source Threshold Voltage Max | 550mV |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943487/)

**DMG3413L 20V P-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|
||||
|**V(BR)DSS**|**RDS(on) max**|**ID**<br>**TA = +25°C**|
|-20V|95mΩ @ VGS= -4.5V|3.0A|
||130mΩ @ VGS= -2.5V|2.5A|



## **Features and Benefits** 

- Low On-Resistance 

- Low Input Capacitance 

- Fast Switching Speed 

- Low Input/Output Leakage 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

## **Description** 

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. 

## **Applications** 

- DC-DC Converters 

- Power Management Functions 

- Analog Switch 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Qualified to AEC-Q101 standards for High Reliability** 

## **Mechanical Data** 

- Case: SOT23 

- Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminal Connections: See Diagram 

- Terminals: Finish – Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 

   - Weight: 0.0072 grams (approximate) 

 

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Drain<br>**----- End of picture text -----**<br>


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SOT23<br>D<br>Gate<br>G S Source<br>e f A<br>Top View  Pin Configuration Internal Schematic<br> Information (Note 4)<br>Part Number Case Packaging<br>DMG3413L-7  SOT23 3,000/Tape & Reel<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 

   2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. 

## **Marking Information** 

|||||||||||||||||||G33 = Marking Code|||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|||||**G33**|||||**YM**|||||**G33**<br>**YM**||||YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)<br>= Date Code Marking for CAT (Chengdu Assembly/ Test site)<br>YM|||||
|||||||||||||||||||Y or = Year (ex: A = 2013)<br>M = Month (ex: 9 = September)<br>Y|||||
|||**Chengdu A/T Site**||||**Chengdu A/T Site**|||**Chengdu A/T Site**|**Chengdu A/T Site**||||**Shanghai A/T Site**|||||||||
|Date CodeKey<br>**Year**<br>**2010**<br>**Code**<br>X<br>**Month**<br>**Jan**<br>**Feb**<br>**Code**<br>1<br>2<br>~~ee>~~||||||**2011**<br>Y<br>**Mar**<br>3||||||||**2012**<br>Z<br>**Apr**<br>4||**2013**<br>A<br>**May**<br>5||**2014**<br>**2015**<br>B<br>C<br>**Jun**<br>**Jul**<br>**Aug**<br>6<br>7<br>8|**2016**<br>D<br>**Sep**<br>9|**2017**<br>**2018**<br>E<br>F<br>**Oct**<br>**Nov**<br>**Dec**<br>O<br>N<br>D|||
||DMG3413L|||||||||||||||||1 of 6||||September 2013|
||Document number: DS35051  Rev. 4 - 2|||Document number: DS35051  Rev. 4 - 2||Document number: DS35051  Rev. 4 - 2||||||||||**www.diodes.com**||||||© Diodes Incorporated|



September 2013 © Diodes Incorporated 

**DMG3413L** 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|
||||||
|**Characteristic**||**Symbol**|**Value**|**Units**|
|Total Power Dissipation(Note 5)||PD|0.7|W|
|Thermal Resistance, Junction to Ambient (Note 5)|Steady State|RθJA|184|°C/W|
||t<10s||115||
|Total Power Dissipation(Note 6)||PD|1.3|W|
|Thermal Resistance, Junction to Ambient (Note 6)|Steady State|RθJA|94|°C/W|
||t<10s||61||
|Thermal Resistance,Junction to Case||RθJC|25||
|Operatingand Storage Temperature Range||TJ,TSTG|-55 to +150|°C|



## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|
|||||||
|**Characteristic**|||**Symbol **|**Value**|**Units**|
|Drain-Source Voltage|||VDSS|-20|V|
|Gate-Source Voltage|||VGSS|8|V|
|Continuous Drain Current (Note 6) VGS= -4.5V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|3.0<br>2.4|A|
||t<10s|TA= +25°C<br>TA= +70°C|ID|3.7<br>2.9|A|
|Continuous Drain Current (Note 6) VGS= -2.5V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|2.5<br>2.0|A|
||t<10s|TA= +25°C<br>TA= +70°C|ID|3.2<br>2.5|A|
|Maximum Continuous BodyDiode Forward Current(Note 6)|||IS|1.9|A|
|Pulsed Drain Current(10µspulse,dutycycle = 1%)|||IDM|20|A|



## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS(Note 7)**|||||||
|Drain-Source Breakdown Voltage|BVDSS|-20|—|—|V|VGS= 0V,ID= -250µA|
|Zero Gate Voltage Drain Current|IDSS|—|—|-1.0|µA|VDS= -16V,VGS= 0V|
|Gate-Source Leakage|IGSS|—|—|±100|nA|VGS=8V,VDS= 0V|
|**ON CHARACTERISTICS (Note 7)**|||||||
|Gate Threshold Voltage|VGS(th)|-0.6<br>~~==~~|-0.55<br>~~==~~|-1.3<br>~~== eS~~|V<br>~~eS~~|VDS= VGS,ID= -250µA<br>~~eS~~|
|Static Drain-Source On-Resistance<br>~~RE~~|RDS(ON)<br>~~RE~~|—<br>~~RE~~<br>~~==~~|73<br>~~RE~~<br>~~==~~|95<br>~~RE~~<br>~~== eS~~|mΩ<br>~~RE~~<br>~~eS~~|VGS= -4.5V,ID= -3.0A<br>~~RE~~<br>~~eS~~|
||||95<br>~~RE~~<br>~~==~~|130<br>~~RE~~<br>~~== eS~~||VGS= -2.5V,ID= -2.6A<br>~~RE~~<br>~~eS~~|
||||146<br>~~RE~~<br>~~==~~|190<br>~~RE~~<br>~~== eS~~||VGS= -1.8V,ID= -1A<br>~~RE~~<br>~~eS~~|
|Forward Transfer Admittance<br>~~RE~~||Yfs|<br>~~RE~~|—<br>~~RE~~<br>~~==~~|8<br>~~RE~~<br>~~==~~|-<br>~~RE~~<br>~~== eS~~|S<br>~~RE~~<br>~~eS~~|VDS= -5V,ID= -3A<br>~~RE~~<br>~~eS~~|
|Diode Forward Voltage|VSD|—<br>~~==~~|-0.8<br>~~==~~|-1.25<br>~~== eS~~|V<br>~~eS~~|VGS= 0V,IS= -1A<br>~~eS~~|
|**DYNAMIC CHARACTERISTICS (Note 8)**|||||||
|Input Capacitance<br>~~——_——~~|Ciss<br>~~——_——~~|—<br>~~——_——~~|857<br>~~——_——~~|—<br>~~——_——~~|pF<br>~~——_——~~|VDS= -10V, VGS= 0V<br>f = 1.0MHz<br>~~——_——~~|
|Output Capacitance<br>~~——_——~~|Coss<br>~~——_——~~|—<br>~~——_——~~|54<br>~~——_——~~|—<br>~~——_——~~|pF<br>~~——_——~~||
|Reverse Transfer Capacitance<br>~~——_——~~|Crss<br>~~——_——~~|—<br>~~——_——~~|49<br>~~——_——~~|—<br>~~——_——~~|pF<br>~~——_——~~||
|Gate Resistnace<br>~~——_——~~|Rg<br>~~——_——~~|—<br>~~——_——~~|12.3<br>~~——_——~~|—<br>~~——_——~~|Ω<br>~~——_——~~|VDS= 0V,VGS= 0V,f = 1.0MHz<br>~~——_——~~|
|Total Gate Charge|Qg|—|9.0|—|nC|VGS= -4.5V, VDS= -15V, ID= -4A<br>~~ee~~|
|Gate-Source Charge|Qgs|—|1.6|—|nC||
|Gate-Drain Charge<br>~~——~~|Qgd|—|1.1|—<br>~~ee~~|nC<br>~~ee~~||
|Turn-On DelayTime<br>~~——~~|tD(on)|—|9.7|—<br>~~ee~~|ns<br>~~ee~~|VDS= -15V, VGS= -10V,<br>RL= 15, RG= 6.0ID= -1A<br>~~ee~~|
|Turn-On Rise Time<br>~~——~~|tr|—|17.7|—<br>~~ee~~|ns<br>~~ee~~||
|Turn-Off DelayTime<br>~~——~~|tD(off)|—|268.8|—<br>~~ee~~|ns<br>~~ee~~||
|Turn-Off Fall Time<br>~~——~~|tf|—|64.2|—<br>~~ee~~|ns<br>~~ee~~||



- Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 

   6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate 

   - 7 .Short duration pulse test used to minimize self-heating effect. 

   8. Guaranteed by design. Not subject to production testing. 

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**DMG3413L** 

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12 -VGS = 10V 8<br>-VGS = 4.5V<br>V DS = -5.0V<br>10 -V GS = 4.0V<br>-VGS = 3.5V 6<br>- -VGS = 3.0V | a aa<br>8<br>Scene -VGS = 2.5V<br>6 -VGS = 2.0V 4<br>4<br>2 2 TA = 150C TA = 85C<br>| -VGS = 1.5V TA = 125C T A  = 25C<br>TA = -55C<br>0 YCAEE ee 0 oeD/A oe<br>0 1 2 3 4 5 0 0.5 1.0 1.5 2.0 2.5 3.0<br>-VDS, DRAIN -SOURCE VOLTAGE(V) -VGS, GATE-SOURCE VOLTAGE (V)<br>Fig. 1 Typical Output Characteristics Fig. 2  Typical Transfer Characteristics<br>0.14 0.20<br>TTT V GS = -4.5V To<br>0.12<br>0.16<br>0.10<br>Hoe EEE TA = 150C<br>0.12<br>0.08 ae ee TA = 125C<br>TA = 85C<br>0.06 a 0.08<br>TA = 25C<br>0.04<br>0.04 TA = -55C<br>HAPrH REESE<br>0.02<br>0 te 0 SESS<br>0 2 4 6 8 10 0 2 4 6 8 10 12<br>-ID, DRAIN SOURCE CURRENT -ID, DRAIN SOURCE CURRENT (A)<br>Fig. 3  Typical On-Resistance vs.  Fig. 4  Typical On-Resistance vs.<br>Drain Current and Gate Voltage  Drain Current and Temperature<br>1.6 0.20<br>1.4 0.16<br>Sanna 4 TT -VGS TE   2= .5V<br>-ID  3.0= A<br>1.2 0.12<br>fee tT eet<br>1.0 0.08 -V GS = 4.5V<br>-ID  5= A<br>0.8 SERV AGERE 0.04 peooaee<br>tee<br>0.6 0<br>-50 LEEPER) -25 0 25 50 75 100 125 150 = -50 LELEELLE -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C)<br>Fig. 5  On-Resistance Variation with Temperature Fig. 6  On-Resistance Variation with Temperature<br>, DRAIN CURRENT (A) , DRAIN CURRENT (A)<br>D D<br>-I -I<br>) , DRAIN-SOURCE ON-RESISTANCE()<br>,DRAIN-SOURCE ON-RESISTANCE(<br>DS(ON)<br>DS(ON) R<br>R<br>)<br>, DRAIN-SOURCE<br>DS(ON)<br>R<br>ON-RESISTANCE (Normalized)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
1.6 12<br>10<br>1.2<br>8<br>0.8 Soy} |  EEE 6<br>4<br>0.4 TT SS8 0 COOP<br>2<br>0 0<br>-50 -25 0 25 50 75 100 125 150 0 0.2 0.4 0.6 0.8 1 1.2 1.4<br>TA, AMBIENT TEMPERATURE (°C) -VSD, SOURCE-DRAIN VOLTAGE (V)<br>Fig. 7 Gate Threshold Variation vs. Ambient Temperature Fig. 8 Diode Forward Voltage vs. Current<br>10,000 aa 10<br>f = 1MHz<br>——<br>a GG<br>a ee | 8 7<br>1,000<br>——————————————— SS Ciss 6 a VpsIp = = - 4A - 15V Jo<br>a CO<br>a<br>4<br>100<br>Ki | | | lt Wa<br>Se Coss<br>2<br>C rss<br>10  0<br>0 5 10 15 20 25 30 0 5 10 15 20<br>-VDS, DRAIN-SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC)<br>Fig. 9 Typical Junction Capacitance Fig. 10 Gate-Charge Characteristics<br>400 100<br>350300 Uama \ Single Pulse RRT J JAJA-T = 176(t) A  = P  = R*JA RC/W * r JA(t) (t) ll 10 aKoCOPNT R Limited CENTS DS(on) PW = 10 ul µs<br>SSS<br>eseeee |<br>250<br>200 TTT 1 oeRRASATTN DC<br>| sa SN PN<br>PW = 10s<br>NTT ISBN<br>150 y [tf P W  = 1s NENTNTT<br>P W  = 100ms<br>100 a\ 0.1 SINT TJ(max) = 150°C P W = 10ms PW = 1ms<br>TA = 25°C PW = 100µs<br>50 SN VGS = -8V | NON |<br>Single Pulse<br>0 UCI Ning aeS TT O TTT 0.01 DUT on 1 * MRP Board aieenaei<br>0.00001 0.001 0.1 10 1,000 0.1 1 10 100<br>t1, PULSE DURATION TIME (sec) -VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 11 Single Pulse Maximum Power Dissipation Fig. 12 SOA, Safe Operation Area<br>, SOURCE CURRENT (A)<br>S<br>, GATE THRESHOLD VOLTAGE(V) -I<br>GS(TH)<br>V<br>, JUNCTION CAPACITANCE (pF) , GATE-SOURCE VOLTAGE (V)<br>T GS<br>C V<br>, DRAIN CURRENT (A)<br>D<br>-I<br>, PEAK TRANSIENT POWER (W)<br>(pk)<br>P<br>**----- End of picture text -----**<br>


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**www.diodes.com** 

**DMG3413L** 

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**----- Start of picture text -----**<br>
1<br>D = 0.9<br>D = 0.7<br>D = 0.5<br>CS ne eT<br>D = 0.3<br>imme en<br>0.1<br>D = 0.1<br>D = 0.05<br>Saene i iae ae<br>Ne, D = 0.02 Aa] ME RARE RATT TT<br>0.01<br>D = 0.01<br>RJA(t)=r(t) * RJA<br>D = 0.005 R JA =176°C/W<br>a er el Duty Cycle, D=t1/ t2 UTI<br>Single Pulse<br>0.001 Pull Se ELTHAM TS CEE ST ETE E TE at ll<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000<br>t1, PULSE DURATION TIMES (sec)<br>Fig. 13  Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


## **Package Outline Dimensions** 

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. 

**==> picture [326 x 166] intentionally omitted <==**

**----- Start of picture text -----**<br>
>| A fe PC SOT23<br>Dim  Min  Max  Typ<br>A  0.37  0.51  0.40<br>ee ry a ee ee<br>| ee B  1.20  ee 1.40  ee 1.30  ee<br>B C C  2.30  2.50  2.40<br>(| D  | 0.89 {[ 1.03 {| 0.915<br>F  0.45 0.60 0.535<br>| eea G 1.7 ee 8 2. ee 05 1. ee 83<br>H H  2.80 3.00 2.90<br>J  0.013 0.10  0.05<br>K K1 M K  0.903 1.10  1.00<br>D K1  -  -  0.400<br>J F |__ G L ‘, es L  0.4 ee 5 0. ee 61  0.55<br>M  0.085 0.18 0.11<br> 0°  8°  -<br>ee ee ee ee<br>(G a) |riee All Dim ee ension ee s in mm  ee<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. 

||||||||||||||||||**Dimensions**|**Value (in mm)**|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
||||Y||||||||||||||**Z**|2.9|
||||||||||||||||||**X**|0.8|
|Z<br>~~|~~|||||||~~X~~|||~~E~~<br>C<br>j<br>~~EP~~|||||||**Y**<br>**C**<br>**E**|0.9<br>2.0<br>1.35|



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DMG3413L Document number: DS35051  Rev. 4 - 2 

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**DMG3413L** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

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This document is written in English but may be translated into multiple languages for reference.  Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

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Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2013, Diodes Incorporated 

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- [View this product on Novapart](https://novapart.co/products/DMG3413L-7/power-mosfet-p-channel-20-v-3-a-0073-ohm-sot-23)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/dmg3413l-7/mosfet-p-ch-20v-3a-sot-23/dp/3943487)
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