# Power MOSFET, N Channel, 30 V, 4 A, 0.052 ohm, SOT-23, Surface Mount

![Product image](https://novapart.co/image/farnell:3943484RL/)

**URL**: https://novapart.co/products/DMG3402LQ-7/power-mosfet-n-channel-30-v-4-a-0052-ohm-sot-23
**SKU**: DMG3402LQ-7
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.1440
**Stock**: 10+
**Lead Time**: 190 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | AEC-Q101 |
| Power Dissipation | 1.4W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOT-23 |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 4A |
| Drain Source On State Resistance | 0.052ohm |
| Gate Source Threshold Voltage Max | 1.4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943484RL/)

**DMG3402LQ** -— 

## **N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR** 

## **Product Summary** 

## **Features** 

- Low On-Resistance 

|**BVDSS**|**RDS(ON) MAX**|**ID MAX**<br>**TA = +25°C**|
|---|---|---|
|30V|52mΩ@VGS= 10V|4A|
||65mΩ@VGS= 4.5V|3A|
||85mΩ@VGS= 2.5V|2A|



- Low Gate Threshold Voltage 

- Low Input Capacitance 

- Fast Switching Speed 

- Low Input/Output Leakage 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

- **PPAP Capable (Note 4)** 

## **Applications** 

- DC-DC Converters 

- Power Management Functions 

- Battery Operated Systems and Solid-State Relays 

## **Mechanical Data** 

- Case: SOT23 

- Case Material: Molded Plastic, ―Green‖ Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminals: Finish – Matte Tin annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 **e3** 

- Terminal Connections: See Diagram 

- Weight: 0.008 grams (Approximate) 

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SOT23<br>D<br>D<br>G<br>G S<br>e © 0.<br>S<br>Top View<br>Equivalent Circuit Pin Configuration<br> Information (Note 5)<br>Part Number Case Packaging<br>DMG3402LQ-7  SOT23  3000/Tape & Reel<br>DMG3402LQ-13 SOT23 10000/Tape & Reel<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 5) 

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 

Notes: 

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and 

Lead-free. 

   3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to https://www.diodes.com/quality/. 

   5. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

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N32 = Product Type Marking Code<br>YM = Date Code Marking<br>N32<br>Y = Year (ex: G = 2019)<br>M = Month (ex: 9 = September)<br>Date Code Key<br>Year 2019 2020 2021 2022 2023 2024 2025  2026  2027<br>———————————————— Code G  H  I  J  K  L  M  N  O<br>Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec<br>SS Code 1  2  3  4  5  6  7  8  9  O  N  D<br>DMG3402LQ 1 of 7  January 2019<br>Document number: DS41443  Rev. 2 - 2 www.diodes.com   © Diodes Incorporated<br>YM<br>**----- End of picture text -----**<br>


**DMG3402LQ** 

**Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|DrainSourceVoltage|VDSS|30|V|
|Gate-Source Voltage|VGSS|12|V|
|DrainCurrent (Note 6)|ID|4.0|A|
|Body-Diode Continuous Current(Note 6)|IS|1.5|A|



## **Thermal Characteristics** 

|**Thermal Characteristics**||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Total Power Dissipation(Note 6)|PD|1.4|W|
|Thermal Resistance,Junction to Ambient@TA= +25°C(Note 6)|RθJA|90|°C/W|
|Operatingand Storage Temperature Range|TJ,TSTG|-55 to +150|°C|



## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS(Note 7)**|||||||
|Drain-Source Breakdown Voltage<br>~~ee~~|BVDSS<br>~~ee~~|30<br>~~ee~~|<br>~~ee~~|<br>~~ee~~|V<br>~~ee~~|VGS= 0V,ID= 250µA<br>~~ee~~|
|Zero GateVoltageDrainCurrent<br>~~ee~~|IDSS<br>~~ee~~|<br>~~ee~~|<br>~~ee~~|1<br>~~ee~~|µA<br>~~ee~~|VDS= 30V,VGS= 0V<br>~~ee~~|
|Gate-BodyLeakage<br>~~ee~~|IGSS<br>~~ee~~|<br>~~ee~~|<br>~~ee~~|100<br>~~ee~~|nA<br>~~ee~~|VGS= ±12V,VDS= 0V<br>~~ee~~|
|**ON CHARACTERISTICS(Note 7)**<br>~~ee~~|||||||
|GateThresholdVoltage|VGS(TH)|0.6|—|1.4|V|VDS= VGS,ID= 250µA|
|Static Drain-Source On-Resistance<br>~~a~~|GS(TH)<br>RDS(ON)|<br><br>~~eee~~|—<br>—<br>—<br>~~eee~~|52<br>65<br>85<br>~~eee~~|mΩ<br>~~eee~~|VGS= 10V, ID= 4A<br>VGS= 4.5V, ID= 3A<br>VGS= 2.5V,ID= 2A<br>~~eee~~|
|Forward Transconductance<br>~~a~~||Yfs||<br>~~eee~~|6.6<br>~~eee~~|<br>~~eee~~|s<br>~~eee~~|VDS= 5V,ID= 3.1A<br>~~eee~~|
|Source-Drain Diode Forward Voltage<br>~~a~~|VSD|<br>~~eee~~|<br>~~eee~~|1.16<br>~~eee~~|V<br>~~eee~~|VGS= 0V,IS= 2.0A<br>~~eee~~|
|**DYNAMIC CHARACTERISTICS(Note 8)**<br>~~OO~~|||||||
|Gate Resistance<br>~~OO~~|Rg<br>~~OO~~|<br>~~OO~~|2.2<br>~~OO~~|<br>~~OO~~|Ω<br>~~OO~~|VDS=0V, VGS= 0V,<br>f = 1MHz<br>~~OO~~|
|Total Gate Charge (10V)<br>~~a~~|Qg<br>~~a~~|<br>~~a~~|11.7<br>~~a~~|<br>~~a~~|nC<br>~~a~~|VGS= 10 V, VDS= 15V,<br>ID= 4 A<br>~~a~~|
|Total Gate Charge(4.5V)<br>~~a~~|Qg<br>~~a~~|<br>~~a~~|5.5<br>~~a~~|<br>~~a~~|nC<br>~~a~~|VGS=10 V, VDS= 15V,<br>ID= 4 A<br>~~a~~|
|Gate-Source Charge|Qgs||1.1||nC||
|Gate-Drain Charge|Qgd||1.8||nC||
|Turn-On DelayTime|tD(ON)||1.9||ns|VDD= 15V, VGEN= 10V,<br>RGEN=3Ω, RL= 3.75Ω|
|Turn-On Rise Time|tR||1.6||ns||
|Turn-Off DelayTime|tD(OFF)||10.3||ns||
|Turn-Off Fall Time|tF||2.0||ns||
|Input Capacitance|Ciss||464||pF|VDS= 15V, VGS= 0V<br>f = 1.0MHz|
|Output Capacitance|Coss||49.5||pF||
|Reverse Transfer Capacitance|Crss||43.8||pF||



- Notes: 6. Device mounted on FR-4 PCB. t ≤5 sec. 

7. Short duration pulse test used to minimize self-heating effect. 

8. Guaranteed by design. Not subject to production testing. 

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10.0 20<br>VGS = 10V V     = 5.0VDS<br>18<br>8.0 VGS = 4.5V 16<br>)<br>[A] 14<br>VGS = 3.5V T [(] N<br>6.0 |lf E 12 aeee<br>R<br>VGS = 3.0V RUC 10<br>4.0 VGS = 2.0V [N] IA 8 T   = 150°CA<br>VGS = 2.5V RD<br>, D 6 T   = 125°CA<br>I T   = 25°CA<br>2.0 4<br>T   = 85°CA<br>|a fo<br>2 T   = -55°CA<br>VGS = 1.5V<br>0.0 0<br>0 1 2 3 4<br>VDS, DRAIN-SOURCE VOLTAGE (V) V     , GATE-SOURCE VOLTAGE (V)GS<br>Figure 1  Typical Output Characteristics Figure 2  Typical Transfer Characteristics<br>1 ) 0.08<br>(E V      = 4.5VGS<br>CN 0.07<br>Se T [A] FOE T    = 150°CA<br>I [S] S 0.06<br>E<br>FERRER ER - [R] O [N] 0.05 SEE T   = 125°CA rear T    = 85°CA<br>E<br>0.1 EERREEEEE CR 0.04 Sete<br>V GS = 2.5V O [U] T    = 25°CA<br>- [S] 0.03<br>V GS = 4.5V I [N] AR T    = -55°CA<br>ec D 0.02 pj | | | |<br>= V GS = 10V , ) PTT<br>( [ON] S 0.01<br>D<br>R<br>0.01 1 PCPPPP 3 5 7 Er 9 } 0 0 Geer 4 8 12 16 Fe 20<br>ID, DRAIN-SOURCE CURRENT (A) I  , DRAIN CURRENT (A)D<br>Figure 3  Typical On-Resistance vs.  Figure 4  Typical On-Resistance vs.<br>Drain Current and Gate Voltage  Drain Current and Temperature<br>2 0.1<br>1.8 V GS   10= V<br>ID = 6A<br>0.08<br>1.6 See<br>1.4 Seensa V I DGS = 3A = 4.5V 0.06 LETTff VIDGS= 2A  2= .5V VGS = 4.5V<br>1.2 ID = 3A<br>|) | ye<br>VGS  2= .5V<br>1 Leer I D = 2A 0.04 Py VGS  10= V<br>ID = 6A<br>lett cry ee<br>0.8<br>0.02<br>HHH eee<br>0.6<br>0.4 0<br>-50 coro -25 0 25 50 75 100 125 150 EE<br>TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C)<br>Figure 5  On-Resistance Variation with Temperature Figure 6  On-Resistance Variation with Temperature<br>, DRAIN CURRENT (A)<br> I<br>D<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>, DRAIN CURRENT (A)<br>ID<br>)<br><br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>DS(ON) R<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>DS(ON)<br>, DRAIN-SOURCE<br>R<br>ON-RESISTANCE (NORMALIZED)<br>**----- End of picture text -----**<br>


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2 20<br>) 18<br>( [V]<br>G [E] 1.6 16<br>T [A]<br>O [L] LEE 14 ro<br>V<br>D 1.2 I   = 1mAD 12<br>O [L]<br>H<br>SE 10 TTA A= 25°C = 25 癈<br>R<br>T [H] 0.8 I   = 250µAD 8<br>6<br>[ATE] G<br>, [h)] 0.4 Hrs) 4 ERE<br>[(t] S<br>G ep 2 RRS<br>V<br>0 LEE ELEL 0 pA=<br>-50 -25 0 25 50 75 100 125 150 0 0.3 0.6 0.9 1.2 1.5<br>T  , JUNCTION TEMPERATURE (J °C ) VSD, SOURCE-DRAIN VOLTAGE (V)<br>Figure 7  Gate Threshold Variation vs. Junction Temperature Figure 8  Diode Forward Voltage vs. Current<br>1,000  10<br>Ciss<br>8<br>VDS = 15V<br>ID  4= A<br>6<br>100<br>RS eee<br>4<br>Coss<br>Crss<br>——— Evan<br>2<br>a ee ee eee —<br>f = 1MHz<br>10  EEE ALTE<br>0<br>0 5 10 15 20 25 30 0 2 4 6 8 10 12<br>VDS, DRAIN-SOURCE VOLTAGE (V) Qg [, TOTAL GATE CHARGE ] (nC)<br>Figure 9  Typical Junction Capacitance Figure 10  Gate Charge<br> GATE THRESHOLD VOLTAGE (V)<br>GS<br>V<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(TH)<br>V<br>, GATE SOURCE VOLTAGE (V)<br>GS<br>V<br>, SOURCE CURRENT (A)<br>IS<br>, JUNCTION CAPACITANCE (pF)<br>C<br>T<br>**----- End of picture text -----**<br>


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100 SS<br>R Rds(o DS(ON)  n)  Se<br>Limited  Limited aks|<br>AdD<br>10 poINSEENRTTT<br>ee a ee ee<br>[oefg[eNONTTNT NRNNRNRENETNNNNF=ERE<br>mR KR<br>1 SA DC . AMINNINN | |<br>— POSSE<br>— PW = 10s NST SRR<br>LT OSXPt) [NONNOUTENYTT] ING<br>FINS PW = 1s ONPSE<br>PW = 100ms<br>0.1 TJ(max) = 150°C oof=NS P W = 10ms NAN<br>T  = 25°CA PpeeEAN IRE)<br>VGS =10V le eeee ee| Le(ee SONON<br>Single Pulse PW = 1ms<br>DUT on 1 * MRP Board PW = 100µs<br>0.01<br>0.1 1 10 100<br>VDS , DRAIN-SOURCE VOLTAGE (V)<br>Figure 11 SOA, Safe Operation Area<br>, DRAIN CURRENT (A)<br>D<br>I<br>**----- End of picture text -----**<br>


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1 SS SS SS EG Oc ce ee ne eS SS SS OO<br>re D = 0.9<br>D = 0.7<br>eePO a ee re rt ttth<br>D = 0.5 UT ee or OTT<br>Ey er<br>Pe D = 0.3 aET AE<br>0.1 esUEee D = 0.1 OOeeUpan eG eeor ees,cet LHIAA0eee——nen 4 LET0 edETIESOOaLeeEETRE OG LEEELTA0AST|EEET|<br>a oe|<br>D = 0.05<br>ETH RAHI TET<br>oe GG a<br>D = 0.02<br>ATTIC<br>0.01<br>60ers D = 0.01<br>a a et ee Oe 00 OO 0 OO 0 GG G6 GGG a OG GO GG<br>a cat 7 a a a a ee<br>D = 0.005<br>peatLATAi  PYEEATP TryPPT R Rthja(t)=r(t) * RthjaθJA (t) = r(t) * R θJA TTLT TT<br>D = Single Pulse R θJA  Rthja=159C/W= 159 ℃ /W<br>Duty Cycle, D = t1 / t2 Duty Cycle, D=t1 /  t2<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1, PULSE DURATION TIME (sec)<br>Figure 12 Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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**DMG3402LQ** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**==> picture [447 x 401] intentionally omitted <==**

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SOT23<br>All 7°<br>H<br>GAUGE PLANE SOT23<br>0.25 Dim  Min  Max  Typ<br>J A  0.37  0.51  0.40<br>K1 K<br>B  1.20  1.40  1.30<br>{Ge ==== C  2.30  2.50  2.40<br>a D  0.89  1.03  0.915<br>A M F  0.45  0.60  0.535<br>nae L L1 ==—— G  1.78 2.05 1.83<br>H  2.80 3.00 2.90<br>J  0.013 0.10 0.05<br>K  0.890 1.00 0.975<br>oo ====<br>C B K1  0.903  1.10  1.025<br>L  0.45  0.61  0.55<br>L1  0.25  0.55  0.40<br>M  0.085 0.150 0.110<br>io ====<br>D a  0°  8°  --<br>All Dimensions in mm<br>F G<br>Of -- ee ee ee ee<br>ested Pad Layout yout out<br>Please see http://www.diodes.com/package-outlines.html for the latest version.<br>SOT23<br>Y<br>Dimensions  Value (in mm)<br>C  2.0<br>Y1 ET C<br>X  0.8<br>X1  1.35<br>Y  0.9<br>Y1  2.9<br>a) aE<br>Pd X Ld X1<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout yout out** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

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DMG3402LQ Document number: DS41443  Rev. 2 - 2 

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**DMG3402LQ** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2019, Diodes Incorporated 

**www.diodes.com** 

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DMG3402LQ Document number: DS41443  Rev. 2 - 2 

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- [Supplier page](https://es.farnell.com/diodes-inc/dmg3402lq-7/mosfet-n-ch-30v-4a-sot-23/dp/3943484RL)
---

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