# Power MOSFET, P Channel, 30 V, 2.5 A, 0.09 ohm, SOT-23, Surface Mount

![Product image](https://novapart.co/image/farnell:3127316/)

**URL**: https://novapart.co/products/DMG2307L-7/power-mosfet-p-channel-30-v-25-a-009-ohm-sot-23
**SKU**: DMG2307L-7
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.0900
**Stock**: 1000+
**Lead Time**: 78 days (indicative)

## Description

Transistor Polarity:P Channel; Continuous Drain Current Id:-2.5A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.07ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3V;

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 760mW |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOT-23 |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 2.5A |
| Drain Source On State Resistance | 0.09ohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3127316/)

**NOT RECOMMENDED FOR NEW DESIGN USE DMP3125L DMG2307L** 

## **P-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|
||||
|**BVDSS**|**RDS(ON) max**|**ID max**<br>**TA = +25°C**|
|-30V|90mΩ @ VGS= -10V|-3.8A|
||134mΩ @ VGS= -4.5V|-3.1A|



## **Features and Benefits** 

- Low On-Resistance 

- Low Input Capacitance 

- Fast Switching Speed 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

## **Mechanical Data** 

## **Description and Applications** 

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. 

- General Purpose Interfacing Switch 

- Power Management Functions 

- Case: SOT23 

- Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminal Connections Indicator: See Diagram 

 Terminals: Finish  Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 ©) **e3**  Weight: 0.08 grams (Approximate) 

- Load Switch for Portable Devices 

Top View Internal Schematic Top View 

## **Ordering Information** (Note 4) 

**Part Number Case Packaging** DMG2307L-7 SOT23 3,000/Tape & Reel 

Notes: 

   1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and 

Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

G24 = Product Type Marking Code YM  = Date Code Marking Y or = Year (ex: F = 2018) M = Month (ex: 9 = September) 

Date Code Key **Year 2018 2019 2020 2021 2022 2023 2024 2025 2026 2027 2028 Code** F G H I J K L M N O P ~~a~~ **Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec** ~~ee~~ **Code** 1 2 3 4 5 6 7 8 9 O N D DMG2307L 1 of 7 August 2018 Document number: DS35415  Rev. 5 - 3 **www.diodes.com** © Diodes Incorporated 

August 2018 © Diodes Incorporated 

**NOT RECOMMENDED FOR NEW DESIGN USE DMP3125L** 

**DMG2307L** 

**Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|||||||
|---|---|---|---|---|---|
|**Characteristic**|||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage|||VDSS|-30|V|
|Gate-Source Voltage|||VGSS|±20|V|
|Continuous Drain Current (Note 5) VGS= -10V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|-2.5<br>-2.0|A|
|Continuous Drain Current (Note 6) VGS= -10V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|-3.8<br>-3.0|A|
|Continuous Drain Current (Note 6) VGS= -10V|t≦10sec|TA= +25°C<br>TA= +70°C|ID|-4.6<br>-3.6|A|
|Continuous Drain Current (Note 6) VGS= -4.5V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|-3.1<br>-2.5|A|
|Pulsed Drain Current(Note 6)|||IDM|-20|A|



## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Characteristic**|**Symbol**|**Value**|**Unit**|
|---|---|---|---|
|Total Power Dissipation(Note 5)|PD|0.76|W|
|Thermal Resistance,Junction to Ambient(Note 5)|RθJA|159|°C/W|
|Total Power Dissipation(Note 6)|PD|1.36|W|
|Thermal Resistance,Junction to Ambient(Note 6)|RθJA|94|°C/W|
|Total Power Dissipation(Note 6)t≦ 10sec|PD|1.9|W|
|Thermal Resistance,Junction to Ambient(Note 6)t≦ 10sec|RθJA|65.8|°C/W|
|Operatingand Storage Temperature Range|TJ, TSTG|-55 to +150|°C|



**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**|**Symbol**|**Min**|**Typ **|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS(Note 7) **|||||||
|Drain-Source Breakdown Voltage|BVDSS|-30|||V|VGS= 0V,ID= -250μA|
|Zero Gate Voltage Drain Current@TC= +25°C|= +25°C<br>IDSS|||-1.0|μA|VDS= -30V,VGS= 0V|
|Gate-Source Leakage|IGSS|||±100|nA|VGS= ±20V,VDS= 0V|
|**ON CHARACTERISTICS(Note 7) **<br>~~NPEEE~~|||||||
|Gate Threshold Voltage<br>~~AS~~<br>~~NP~~|VGS(TH)<br>~~AS~~<br>~~NPEEE~~|-1.0<br>~~AS~~<br>~~EEE~~|<br>~~AS~~<br>~~EEE~~|-3.0<br>~~AS~~<br>~~EEE~~|V<br>~~AS~~<br>~~EEE~~|VDS= VGS,ID= -250μA<br>~~AS~~<br>~~EEE~~|
|Static Drain-Source On-Resistance<br>~~AS~~<br>~~NP~~|RDS(ON)<br>~~AS~~<br>~~NPEEE~~|<br>~~AS~~<br>~~EEE~~|70<br>~~AS~~<br>~~EEE~~|90<br>~~AS~~<br>~~EEE~~|mΩ<br>~~AS~~<br>~~EEE~~|VGS= -10V,ID= -2.5A<br>~~AS~~<br>~~EEE~~|
|||<br>~~AS~~<br>~~EEE~~|105<br>~~AS~~<br>~~EEE~~|134<br>~~AS~~<br>~~EEE~~||VGS= -4.5V,ID= -2.5A<br>~~AS~~<br>~~EEE~~|
|Forward Transfer Admittance<br>~~AS~~<br>~~NP~~||Yfs|<br>~~AS~~<br>~~NPEEE~~|<br>~~AS~~<br>~~EEE~~|4.8<br>~~AS~~<br>~~EEE~~|<br>~~AS~~<br>~~EEE~~|S<br>~~AS~~<br>~~EEE~~|VDS= -10V,ID= -2.5A<br>~~AS~~<br>~~EEE~~|
|Diode Forward Voltage(Note 6)<br>~~NP~~|VSD<br>~~NP EEE~~|<br>~~EEE~~|-0.75<br>~~EEE~~|-1.0<br>~~EEE~~|V<br>~~EEE~~|VGS= 0V,IS= -1A<br>~~EEE~~|
|**DYNAMIC CHARACTERISTICS(Note 8)**<br>~~SOEE~~|||||||
|Input Capacitance<br>~~SO~~|Ciss<br>~~EE~~|<br>~~EE~~|371.3<br>~~EE~~|<br>~~EE~~|pF|VDS= -15V, VGS= 0V,<br>f = 1.0MHz|
|Output Capacitance<br>~~SO~~|Coss<br>~~EE~~|<br>~~EE~~|51.3<br>~~EE~~|<br>~~EE~~|pF||
|Reverse Transfer Capacitance<br>~~SO~~|Crss<br>~~EE~~|<br>~~EE~~|45.9<br>~~EE~~|<br>~~EE~~|pF||
|Gate Resistance<br>~~SO~~|Rg<br>~~EE~~|<br>~~EE~~|17<br>~~EE~~|<br>~~EE~~|Ω|VDS= 0V,VGS= 0V,f = 1.0MHz|
|Total Gate Charge(VGS= -4.5V)<br>~~SO ~~|Qg<br> ~~EE~~|<br>~~EE~~|4.0<br>~~EE~~|<br>~~EE~~|nC|VGS= -10V, VDS= -15V,<br>ID= -3A<br>~~ee~~|
|Total Gate Charge(VGS= -10V)|Qg||8.2||nC||
|Gate-Source Charge|Qgs||0.9||nC||
|Gate-Drain Charge<br>~~—<—<—~~|Qgd||1.2|<br>~~ee~~|nC<br>~~ee~~||
|Turn-On DelayTime<br>~~—<—<—~~|tD(ON)||4.8|<br>~~ee~~|ns<br>~~ee~~|VDS= -15V, VGS= -10V,<br>RL= 15Ω, RG= 6Ω,<br>ID= -1A<br>~~ee~~|
|Turn-On Rise Time<br>~~—<—<—~~|tR||7.3|<br>~~ee~~|ns<br>~~ee~~||
|Turn-Off DelayTime<br>~~—<—<—~~|tD(OFF)||22.4|<br>~~ee~~|ns<br>~~ee~~||
|Turn-Off Fall Time<br>~~—<—<—~~|tF||13.4|<br>~~ee~~|ns<br>~~ee~~||



6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate. 

7. Short duration pulse test used to minimize self-heating effect. 

8. Guaranteed by design. Not subject to product testing. 

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DMG2307L Document number: DS35415  Rev. 5 - 3 

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**NOT RECOMMENDED FOR NEW DESIGN** 

**DMG2307L** 

**USE DMP3125L** 

**==> picture [489 x 689] intentionally omitted <==**

**----- Start of picture text -----**<br>
8.0  V     =-3.5VGS 8 V     = -5.0VDS T   = -55A C T   = 125A C<br>A S V     =-3.0VGS Senne. T   = 25A C Sane T   = 150A C<br>6.0  V     =-4.0VGS 6<br>[A)] T [(] [A)] T [(] T  = 85A C<br>[N] RE V     =-4.5VGS [N] RE<br>RUC 4.0  eo V     =-10VGS V     =-2.5VGS RUC 4 COO<br>[IN] A [IN] A<br>R R<br>D D<br>I, D 2.0  I aS ,I D 2 tit ip tt<br>V     =-2.0VGS<br>yo<br>0<br>0.0<br>0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5<br>pitty -V    , DRAIN -SOURCE VOLTAGE(V)DS are -V    , GATE SOURCE VOLTAGE(V)GS CARaEe<br>Fig. 1 Typical Output Characteristics Fig. 2 Typical Transfer Characteristics<br>)(N [CE] 0.350.4 VGS=-2.5V  )(ECN 0.2 V     = -4.5VGS T  = 125A C T   = 150A C<br>T [A] 0.16<br>T [A]<br>I [S] S 0.3 Co f ceeee I [S] SE PAK te<br>- [R]<br>0.25<br>[yi  WYO O [N] 0.12<br>O [N-RE] 0.2 [A  iti dt EC ln en T   = 85A C<br>/ || | LS R 7 a<br>O [URCE] 0.15 VGS=-4. 5 V  O [U] - [S] 0.08 T   = 25A C<br>I [N-S] 0.1 A I [N] ARD a T   = -55A C<br>0.04<br>, [DRA] ) , )O [N]<br>R( [ON] SD 0.05 j— tt C VN, VGS=-10V  RN R(SD ee(TA<br>0 < 0 | | fF<br>0 2 4 6 8 0 2 4 6 8<br>lex ee<br>-I  , DRAIN SOURCE CURRENT(A)D -I  , DRAIN SOURCE CURRENT(A)D<br>Fig. 3  Typical On-Resistance vs.  Fig. 4  Typical On-Resistance vs.<br>Drain Current and Gate Voltage  Drain Current and Temperature<br>1.6 0.2<br>VIDGS=-2A =-4.5V  )(E<br>C<br>1.4 Or e N 0.16 LTTE<br>T [A] V     =-4.5VGS<br>[RESISTANCE] I [S] S I   =-2AD<br>E<br>[N-] O )l [ize] da 1.2 VIDGS=-2.7A =-10V  - [R] O [N] 0.12<br>E<br>r [m] C<br>R<br>[SOURCE] [No] ( 1 a e O [U] 0.08 CTT ae<br>D [RAIN-] , [)] N 0.8 TSH - [S] I [N] ARD 0.04 eri V     =-10VI   =-2.7ADGS<br>[S(O] D ,<br>R<br>( [ON)]<br>D [S]<br>0.6 ATTTor) R 0 aaaEEE<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br><br>T  , JUNCTION TEMPERATURE(J C) T , JUNCTION TEMPERATURE(J C)<br>Fig. 6  On-Resistance Variation with Temperature<br>Fig. 5  On-Resistance Variation with Temperature<br>, DRAIN CURRENT (A) -ID , DRAIN CURRENT (A) -ID<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)  , DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON) DS(ON)<br>R R<br>(NORMALIZED)<br>, DRAIN-SOURCE ON-RESISTANCE  , DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON)<br>R<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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DMG2307L Document number: DS35415  Rev. 5 - 3 

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**NOT RECOMMENDED FOR NEW DESIGN USE DMP3125L** 

**DMG2307L** 

**==> picture [489 x 672] intentionally omitted <==**

**----- Start of picture text -----**<br>
2 8<br>1.6<br>SLE) 6 GRRE<br>[A)] (T<br>ID = -1mA  [N] E<br>1.2 SS R eee<br>R<br>ID = -250μA  UC 4<br>E<br>C<br>0.8 ELLE oSOCS R |oTTe yfata |<br>[OU] S<br>S 2 | |ND<br>I [,]<br>0.4<br>0 LEEL  ELE 0 KZ)LOY ol<br>-50 -25 0 25 50 75 100 125 150 0 0.2 0.4 0.6 0.8 1 1.2 1.4<br>TA, AMBIENT TEMPERATURE  ( °C 癈 ) -V    , SOURCE-DRAIN VOLTAGE (V)SD<br>Fig. 7 Gate Threshold Variation vs. Ambient Temperature Fig. 8 Diode Forward Voltage vs. Current<br>1000 10000<br>f = 1MHz<br>esa aee ee ee _i EEE —_ ————— T   =150°CA<br>Co VF4 ee<br>a a WT en eS<br>Ciss<br>1000<br>( [pF)] rs [nA)] (T SS T   =125°CA<br>N [CE] TTT = 5<br>[N] RE | 4 |-4oO T   =85°CA<br>C [ITA] R 100<br>A U<br>P C<br>100<br>C [A] eee ee Se {| N |} T   =25°CA<br>10<br>Coss<br>U [NCTION] Crss , [LEAKAGE] SS<br>D 1<br>C [,J] T aWwW 4 a>. I ieS SE ce<br>10 0.1<br>0 5 10 C 15 20 25 30 0 i 5 10 15 20 25 30<br>-V     , DRAIN-SOURCE VOLTAGE (V)DS -V    , DRAIN-SOURCE VOLTAGE(V)DS<br>Fig. 9 Typical Junction Capacitance Fig. 10 Typical Drain-Source Leakage Current vs. Voltage<br>10 100<br>4 7 Ch| FO RDS(ON)<br>Limited -ID (A) @PW=1ms  -ID (A) @PW=100μs<br>8 Ks y aa r r be H Z<br>) 10 -I   (A) @D<br>[A] P=10µsPWW=10μs<br>T [(]<br>6 V ID DS =-3A  =-15V  J NRE pe[| KAA NT NAST PNRTTT TN SS ge TTT<br>R<br>U Po SRANINAIN NSE<br>C 1<br>-I   (A) @ DC D<br>4 VA [N] RDIA, D FENRIS -I  (A) @P   =10sD              W-I  (A) @P   =1sD              W JANINSCSAXNENA<br>2 WA - [I] 0.1 -I  (A) @P   =100msD              W AN SS<br>ee T           = 150T  = 25J(MAX) A C C [Tf]aSHT -ID (A) @PW =10ms DNLPL Sit<br>Single Pulse<br>0 0.01 HEE EEE EL<br>0 2 4 6 8 10 0.1 1 10 100<br>Qg, TOTAL GATE CHARGE (nC) -V    , DRAIN-SOURCE VOLTAGE (V)DS<br>Fig. 11 Gate-Charge Characteristics Fig. 12 SOA, Safe Operation Area<br>, GATE-SOURCE VOLTAGE (V)<br>GS<br>V<br>, SOURCE CURRENT (A)<br>S<br>-I<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(TH)<br>-V<br>, LEAKAGE CURRENT (nA)<br>DSS<br>, JUNCTION CAPACITANCE (pF)  -I<br>T<br>C<br>, DRAIN CURRENT (A)<br>D<br>, GATE-SOURCE VOLTAGE (V)  -I<br>GS<br>-V<br>, GATE THRESHOLD VOLTAGE(V)<br>GS(TH)<br>V<br>**----- End of picture text -----**<br>


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DMG2307L 

August 2018 © Diodes Incorporated 

Document number: DS35415  Rev. 5 - 3 

**NOT RECOMMENDED FOR NEW DESIGN USE DMP3125L** 

**DMG2307L** 

**==> picture [399 x 218] intentionally omitted <==**

**----- Start of picture text -----**<br>
1<br>r(t) @ D=0.5 r(t) @ D=0.7<br>ee<br>r(t) @ D=0.9<br>r(t) @ D=0.3<br>0.1 eeSTL ACEHLULMeSeeRTTT TT  LegCoHTT HT HH<br>r(t) @ D=0.1<br>yt r(t) @ D=0.05r(t) @ D=0.02 ater AEE<br>0.01<br>pects r(t) @ D=0.01 rte | ll IT UIT ALI aN LL<br>r(t) @ D=0.005<br>R R θJAJA(t) = r(t) * R (t)=r(t) * R JAθJA<br>r(t) @ D=Single Pulse R Duty Cycle, D = t1 / t2RDuty Cycle, D=t1/ t2 θJA JA= 54 =54 癈 ℃ /W /W<br>0.001 SEE NW<br>Een LMM TT ETI ETI I nl<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1, PLUSE DURATION TIME (sec) t1, PULSE DURATION TIMES (sec)<br>Fig.13 Transient Thermal Resistance Fig. 13  Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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DMG2307L Document number: DS35415  Rev. 5 - 3 

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**NOT RECOMMENDED FOR NEW DESIGN USE DMP3125L** 

**DMG2307L** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**==> picture [479 x 450] intentionally omitted <==**

**----- Start of picture text -----**<br>
SOT23<br>All 7°<br>H<br>GAUGE PLANE SOT23<br>J 0.25 Dim  Min  Max  Typ<br>K1 K A  0.37  0.51  0.40<br>B  1.20 1.40 1.30<br>a C  2.30  2.50  2.40<br>A M D  0.89  1.03  0.915<br>F  0.45  0.60  0.535<br>L L1<br>ea;yw o fff!fhe| UCO REFEoa G  1.78  2.05  1.83<br>H  2.80  3.00  2.90<br>J  0.013  0.10  0.05<br>K  0.890  1.00  0.975<br>C B K1  0.903 1.10 1.025<br>== Sea L  0.45 0.61  0.55<br>a L1  0.25 0.55 0.40<br>M  0.085 0.150 0.110<br>D a  0°  8°  --<br>F G All Dimensions in mm<br>- aS<br>Suggested Pad Layout<br>Please see http://www.diodes.com/package-outlines.html for the latest version.<br>SOT23<br>Y<br>Dimensions  Value (in mm)<br>C  2.0<br>Y1 Ss C X  0.8<br>X1  1.35<br>Y  0.9<br>Y1  2.9<br>cE} ES<br>SI X KA X1<br>**----- End of picture text -----**<br>


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**DMG2307L** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. & Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. **LIFE SUPPORT** Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express we written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A.   Life support devices or systems are devices or systems which: WD 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the SSE failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related OE information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. ¢ 

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August 2018 © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/DMG2307L-7/power-mosfet-p-channel-30-v-25-a-009-ohm-sot-23)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/dmg2307l-7/mosfet-p-ch-30v-2-5a-0-76w/dp/3127316)
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