# Power MOSFET, N Channel, 20 V, 4.2 A, 0.09 ohm, SOT-23, Surface Mount

![Product image](https://novapart.co/image/farnell:2543530RL/)

**URL**: https://novapart.co/products/DMG2302U-7/power-mosfet-n-channel-20-v-42-a-009-ohm-sot-23
**SKU**: DMG2302U-7
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.1310
**Stock**: 10+
**Lead Time**: 106 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:4.2A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.09ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1V; Power Diss

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (15-Jan-2019) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | AEC-Q101 |
| Power Dissipation | 800mW |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 4.5V |
| Transistor Case Style | SOT-23 |
| Drain Source Voltage Vds | 20V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 4.2A |
| Drain Source On State Resistance | 0.09ohm |
| Gate Source Threshold Voltage Max | 1V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2543530RL/)

**DMG2302U N-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Features** 

## **Mechanical Data** 

- Low On-Resistance 

- Low Input Capacitance 

- Fast Switching Speed 

- Low Input/Output Leakage 

- **Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

- Case: SOT-23 

- Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020D 

- Terminals: Finish – Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 

- Terminals Connections: See Diagram Below 

- Weight: 0.008 grams (Approximate) 

## **SOT-23** 

**==> picture [247 x 105] intentionally omitted <==**

**----- Start of picture text -----**<br>
D<br>D<br>G<br>S G S<br>Top View Internal Schematic Top View<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information** (Note 4)|||
|---|---|---|
|**Part Number**|**Case**|**Packaging**|
|DMG2302U-7|SOT-23|3,000/Tape &Reel|



Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html 

## **Marking Information** 

G23 = Product Type Marking Code YM = Date Code Marking **G23** Y or    = Year (ex: C = 2015) M = Month (ex: 9 = September) 

**==> picture [524 x 61] intentionally omitted <==**

**----- Start of picture text -----**<br>
Date Code Key<br>Year 2009 — 2015 2016 2017 2018 2019 2020  2021  2022<br>ee Code W  —  C  D  E  F  G  H  I  J<br>Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec<br>Code 1  2  3 4  5 6 7  8 9 O N  D<br>FF FF<br>**----- End of picture text -----**<br>


1 of 6 **www.diodes.com** 

DMG2302U Document number: DS31838 Rev. 4 - 2 

November 2015 © Diodes Incorporated 

**DMG2302U** 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||||
|---|---|---|---|---|---|
|**Characteristic**|||**Symbol**|**Value**|**Units**|
|Drain-Source Voltage|||VDSS|20|V|
|Gate-Source Voltage|||VGSS|±8|V|
|Continuous Drain Current (Note 5)|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|4.2<br>3.4|A|
|Pulsed Drain Current(10µs Pulse,DutyCycle = 1%) (Note 6)|||IDM|27|A|



## **Thermal Characteristics** 

|**Thermal Characteristics**|**Thermal Characteristics**||||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Units**|
|Total Power Dissipation(Note 5)||PD|0.8|W|
|Thermal Resistance,Junction to Ambient(Note 5)|SteadyState|RθJA|156|°C/W|
|Total Power Dissipation(Note 6)||PD|1.4|W|
|Thermal Resistance,Junction to Ambient(Note 6)|SteadyState|RθJA|91|°C/W|
|Operatingand Storage Temperature Range||TJ,TSTG|-55 to +150|°C|



## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**<br>~~ee~~|**Symbol**<br>~~ee~~|**Min**<br>~~ee~~|**Typ **<br>~~ee~~|**Max**<br>~~ee~~|**Unit**<br>~~ee~~|**Test Condition**<br>~~ee~~|
|**OFF CHARACTERISTICS**(Note 7)<br>~~ee~~|||||||
|Drain-Source Breakdown Voltage<br>~~ee~~|BVDSS<br>~~ee~~|20<br>~~ee~~|—<br>~~ee~~|—<br>~~ee~~|V<br>~~ee~~|VGS= 0V,ID= 10μA<br>~~ee~~|
|Zero Gate Voltage Drain Current TJ= +25°C<br>~~a~~|IDSS<br>~~a~~|—<br>~~a~~|—<br>~~a~~|100<br>~~a~~|nA<br>~~a~~|VDS= 16V,VGS= 0V<br>~~a~~|
|Gate-Source Leakage<br>~~a~~|IGSS<br>~~a~~|—<br>~~a~~|—<br>~~a~~|±100<br>~~a~~|nA<br>~~a~~|VGS= ±8V,VDS= 0V<br>~~a~~|
|**ON CHARACTERISTICS** (Note 7)<br>~~OO~~<br>~~GO~~|||||||
|Gate Threshold Voltage<br>~~GD~~|VGS(th)<br>~~GD~~|0.4<br>~~GD~~|—<br>~~GD~~<br>~~OO~~|1.0<br>~~GD~~<br>~~OO~~|V<br>~~GD~~<br>~~GO~~|VDS= VGS,ID= 50μA<br>~~GD~~|
|Static Drain-Source On-Resistance<br>~~os:~~|RDS(ON)<br>~~os:~~|—<br>~~os:~~|—<br>~~OO~~<br>~~os:~~|90<br>120<br>~~OO~~<br>~~os:~~|mΩ<br>~~GO~~<br>~~os:~~|VGS= 4.5V,ID= 3.6A<br>~~os:~~|
|||||||VGS= 2.5V,ID= 3.1A<br>~~os:~~|
|Forward Transfer Admittance<br>~~a~~||Yfs|<br>~~a~~|—<br>~~a~~|13<br>~~a~~|—<br>~~a~~|S<br>~~a~~|VDS= 5V,ID= 3.6A<br>~~a~~|
|Diode Forward Voltage<br>~~a~~|VSD<br>~~a~~|—<br>~~a~~|0.75<br>~~a~~|1.0<br>~~a~~|V<br>~~a~~|VGS= 0V,IS= 1A<br>~~a~~|
|**DYNAMIC CHARACTERISTICS**(Note 8)|||||||
|Input Capacitance<br>~~se~~|Ciss<br>~~se~~|—<br>~~se~~|594.3<br>~~se~~|—<br>~~se~~|pF<br>~~se~~|VDS= 10V, VGS= 0V,<br>f = 1.0MHz<br>~~se~~<br>~~SSeS~~|
|Output Capacitance<br>~~se~~|Coss<br>~~se~~|—<br>~~se~~|64.5<br>~~se~~|—<br>~~se~~|pF<br>~~se~~||
|Reverse Transfer Capacitance<br>~~se~~<br>~~——S SSe~~|Crss<br>~~se~~<br>~~SSe~~|—<br>~~se~~<br>~~SSe~~|57.7<br>~~se~~<br>~~SSe~~|—<br>~~se~~<br>~~SSe~~|pF<br>~~se~~<br>~~SSe~~||
|Gate Resistance<br>~~——S SSe~~|Rg<br>~~SSe~~|—<br>~~SSe~~|1.5<br>~~SSe~~|—<br>~~SSe~~|Ω<br>~~SSe~~|VDS= 0V,VGS= 0V,f = 1MHz<br>~~SSeS~~|
|Total Gate Charge<br>~~——S SSe~~|Qg<br>~~SSe~~|—<br>~~SSe~~|7.0<br>~~SSe~~|—<br>~~SSe~~|nC<br>~~SSe~~|VGS= 4.5V, VDS= 10V,<br>ID= 3.6A<br>~~SSeS~~<br>~~eee~~|
|Gate-Source Charge<br>~~——S SSe~~|Qgs<br>~~SSe~~|—<br>~~SSe~~|0.9<br>~~SSe~~|—<br>~~SSe~~|nC<br>~~SSe~~||
|Gate-Drain Charge<br>~~——S SSe~~<br>~~—<—~~|Qgd<br>~~SSe~~|—<br>~~SSe~~|1.4<br>~~SSe~~|—<br>~~SSe~~<br>~~eee~~|nC<br>~~SSe~~<br>~~eee~~||
|Turn-On DelayTime<br>~~——S SSe~~<br>~~—<—~~|tD(on)<br>~~SSe~~|—<br>~~SSe~~|7.4<br>~~SSe~~|—<br>~~SSe~~<br>~~eee~~|nS<br>~~SSe~~<br>~~eee~~|VDD= 10V, VGS= 4.5V,<br>RL= 2.78Ω, RG= 1.0Ω<br>~~SSeS~~<br>~~eee~~|
|Turn-On Rise Time<br>~~—<—~~|tr|—|9.8|—<br>~~eee~~|nS<br>~~eee~~||
|Turn-Off DelayTime<br>~~—<—~~|tD(off)|—|28.1|—<br>~~eee~~|nS<br>~~eee~~||
|Turn-Off Fall Time<br>~~—<—~~|tf|—|6.7|—<br>~~eee~~|nS<br>~~eee~~||



6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. copper, single sided. 

7. Short duration pulse test used to minimize self-heating effect. 

8. Guaranteed by design. Not subject to product testing. 

2 of 6 **www.diodes.com** 

DMG2302U Document number: DS31838 Rev. 4 - 2 

November 2015 © Diodes Incorporated 

**DMG2302U** 

**==> picture [483 x 668] intentionally omitted <==**

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10 10<br>VGS = 8.0V VGS = 4.5V<br>VGS = 3.0V<br>8 VGS = 2.5V 8 VDS = 5V<br>VGS = 2.0V<br>VGS = 1.5V<br>6 ji 6 fe<br>[|aaa fp<br>4 4<br>TA = 150°C<br>2 Ae! 2 TA = 125°C<br>TA = 85°C<br>TA = 25°C<br>VGS = 1.2V<br>0 bp 0 TA = -55°C ie<br>0 0.5 1 1.5 2 2.5 3 0 0.5 1 1.5 2<br>ie<br>VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE SOURCE VOLTAGE (V)<br>Fig. 1 Typical Output Characteristics Fig. 2 Typical Transfer Characteristics<br>0.06 0.06<br>0.055 0.055 V GS = 4.5V<br>0.05<br>Coot | ||<br>0.05<br>0.045<br>0.045 CO Ey} TA = 150°C<br>0.04<br>TA = 125°C<br>0.04 | eel VGS = 1.8V 0.035 a TA = 85°C<br>0.03<br>0.035<br>CO 0.025 T A = 25°C<br>0.03 a VGS = 2.5V all ——<br>0.02<br>TA = -55°C<br>0.025 ee V GS = 4.5V 0.015<br>0.02 0.01<br>0.1 1 10 0 2 4 6 8 10<br>CM Pull eet=<br>ID, DRAIN-SOURCE CURRENT (A) ID, DRAIN CURRENT (A)<br>Fig. 3 Typical On-Resistance<br>Fig. 4  Typical Drain-Source On-Resistance<br>vs. Drain Current and Gate Voltage<br>vs. Drain Current and Temperature<br>1.8 0.06<br>1.6 0.05<br>PiTTETTT) = L E EETT<br>VGS = 2.5V<br>1.4 0.04 ID = 5A<br>VGS = 2.5V<br>1.2 I D  = 5A a 0.03 = V GS  = 4.5V<br>ID = 10A<br>VGS = 4.5V<br>1.0 ID = 10A 0.02<br>0.8 peteoan 0.01 ECE<br>0.6 0<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>FITEE ETT) = = CELLET<br>TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)<br>Fig. 5 On-Resistance Variation with Temperature Fig. 6 On-Resistance Variation with Temperature<br>DS(ON)<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>, DRAIN CURRENT (A)<br>ID<br>, DRAIN-SOURCE<br>DS(ON)<br>R<br>ON-RESISTANCE (NORMALIZED)<br>DS(ON)<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>, DRAIN CURRENT (A)<br>ID<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>DS(ON)<br>**----- End of picture text -----**<br>


3 of 6 **www.diodes.com** 

DMG2302U Document number: DS31838 Rev. 4 - 2 

November 2015 © Diodes Incorporated 

**DMG2302U** | 

**==> picture [474 x 679] intentionally omitted <==**

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1.4 10<br>1.2<br>8<br>1.0<br>0.8 EPR I D  = 1mA 6 T A  = 25°C<br>0.6<br>ID = 250µA 4<br>0.4<br>2<br>0.2 Et [eee] —~ [ye]<br>0 0<br>-50 -25 0 25 50 75 100 125 150 0 0.2 0.4 0.6 0.8 1.0 1.2<br>TA, AMBIENT TEMPERATURE (°C) VSD, SOURCE-DRAIN VOLTAGE (V)<br>Fig. 7 Gate Threshold Variation vs. Ambient Temperature Fig. 8 Diode Forward Voltage vs. Current<br>1,000 10000<br>— SSeS SSS TA  = 150°C<br>aSa a | ————a j—_<br>C iss<br>ee | een<br>ee 1000 a TA  = 125 ° C<br>, es ||A| | | TT ldL<br>, | | | | 4 ===<br>100 SS C oss 100 —_—_—_=_==—=== TA = ===  85°C<br>ee SS oh i<br>eea Crss a aOO<br>TA = 25°C<br>10<br>f = 1MHz T A  = -55°C<br>10<br>0 4 8 | 12 | tt 16 20 10 aFt 2 tt 4 a 6 a 8 | 10 | a 12 tt 14 16 tt 18 20<br>VDS, DRAIN-SOURCE VOLTAGE (V) VDS , DRAIN-SOURCE VOLTAGE (V)<br>Fig. 9 Typical Capacitance Figure 10 Typical Drain-Source Leakage Current vs. Voltage<br>1<br>EN D = 0.7<br>D = 0.5 ae a 1 LL<br>EA tt EE<br>D = 0.3 A Aa<br>PT) OT ETNAr<br>0.1 LATINI TUeremre LINELIA LUILLIN EAILATTE EET<br>D = 0.1<br>ee D = 0.05 0 a_i D = 0.9 OO<br>Pee rh<br>D = 0.02 R JA (t) = r(t) * R JA<br>ATT RJA = 157°C/W LTT<br>0.01<br>D = 0.01<br>eA LN LUT mill<br>P(pk) [Ty<br>aR t1 fT TTT<br>[aa F659)a [a] amen ta|| cnee| ee LLL meenaLT Ty<br>mA8 D = 0.005 CO >| t 2 LC<br>D = Single Pulse Duty Cycle, D = tTJ - TA = P * RJA1/t(t2)<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000<br>t1, PULSE DURATION TIME (s)<br>Fig. 11 Transient Thermal Response<br>, DRAIN LEAKAGE CURRENT (nA)<br>IDSS<br>S<br>, SOURCE CURRENT (A)<br>I<br>r(t), TRANSIENT THERMAL RESISTANCE<br>C, CAPACITANCE (pF)<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(TH)<br>V<br>**----- End of picture text -----**<br>


4 of 6 **www.diodes.com** 

DMG2302U Document number: DS31838 Rev. 4 - 2 

November 2015 © Diodes Incorporated 

**DMG2302U** 

## **Package Outline Dimensions** 

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. 

## **SOT-23** 

**==> picture [430 x 186] intentionally omitted <==**

**----- Start of picture text -----**<br>
All 7°<br>H SOT-23<br>GAUGE PLANE Dim  Min  Max  Typ<br>0.25 A  0.37  0.51  0.40<br>K1 K J B  1.20  1.40  1.30<br>C  2.30  2.50  2.40<br>D  0.89  1.03  0.915<br>a<br>F  0.45 0.60 0.535<br>A M<br>G  1.78 2.05 1.83<br>_-_ | L — L1 H  2.80 3.00 2.90<br>J  0.013  0.10  0.05<br>ee ee + K  0.890  1.00  0.975<br>K1  0.903  1.10  1.025<br>C B L  0.45  0.61  0.55<br>L1  0.25  0.55  0.40<br>+L —--—-}+-— M  0.085 0.150  0.110<br> 8°<br>' D ->—____ All Dimensions in mm<br>F G<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. 

**SOT-23** 

**==> picture [173 x 109] intentionally omitted <==**

**----- Start of picture text -----**<br>
Y<br>Z<br>aL C<br>X E<br>| mdeEP<br>**----- End of picture text -----**<br>


|**Dimensions Value**|**Dimensions Value(in mm)**|
|---|---|
|**Z**|2.9|
|**X**|0.8|
|**Y**|0.9|
|**C**|2.0|
|**E**|1.35|



5 of 6 **www.diodes.com** 

DMG2302U Document number: DS31838 Rev. 4 - 2 

November 2015 © Diodes Incorporated 

**DMG2302U** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2015, Diodes Incorporated 

**www.diodes.com** 

6 of 6 **www.diodes.com** 

DMG2302U Document number: DS31838 Rev. 4 - 2 

November 2015 © Diodes Incorporated 



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- [Supplier page](https://es.farnell.com/diodes-inc/dmg2302u-7/mosfet-n-ch-20v-sot-23/dp/2543530RL)
---

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