# Power MOSFET, P Channel, 20 V, 2.7 A, 0.08 ohm, SOT-23, Surface Mount

![Product image](https://novapart.co/image/farnell:3943479RL/)

**URL**: https://novapart.co/products/DMG2301U-7/power-mosfet-p-channel-20-v-27-a-008-ohm-sot-23
**SKU**: DMG2301U-7
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.0690
**Stock**: 1000+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 800mW |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 4.5V |
| Transistor Case Style | SOT-23 |
| Drain Source Voltage Vds | 20V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 2.7A |
| Drain Source On State Resistance | 0.08ohm |
| Gate Source Threshold Voltage Max | 1V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943479RL/)

**NOT RECOMMENDED FOR NEW DESIGN USE DMG2301L DMG2301U** 

## **P-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

**==> picture [217 x 45] intentionally omitted <==**

**----- Start of picture text -----**<br>
||||
|---|---|---|
|BVDSS|RDS(ON) max|TAI = +25°C D max|
|80mΩ @ VGS = -4.5V|-2.7A|
|-20V|
|110mΩ @ VGS = -2.5V|-2.1A|

**----- End of picture text -----**<br>


## **Description** 

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power-management applications. 

## **Features** 

- Low On-Resistance 

- Low Input Capacitance 

- Fast Switching Speed 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

## **Mechanical Data** 

- Case: SOT23 

- Case Material: Molded Plastic, “Green” Molding Compound; UL Flammability Classification Rating 94V-0 

## **Applications** 

- Backlighting 

   - Moisture Sensitivity: Level 1 per J-STD-020 

- Power Management Functions 

   - Terminals: Finish  Matte Tin Annealed over Copper Leadframe; Solderable per MIL-STD-202, Method 208 

- DC-DC Converters 

- Motor Control 

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**----- Start of picture text -----**<br>
  Terminals Connections: See Diagram Below<br> Weight: 0.008 grams (Approximate)<br>SOT23  D<br>D<br>G<br>G S<br>wm S SS<br>S<br>Top View  Top View<br>Internal Schematic  Pin Configuration<br>Ordering Information (Note 4)<br>Part Number Case Packaging<br>DMG2301U-7  SOT23  3,000/Tape & Reel<br>Notes:  1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.<br>2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"<br>    and Lead-free.<br>**----- End of picture text -----**<br>


3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

G21 = Product Type Marking Code YM = Date Code Marking **G21** Y or Y= Year (ex: E = 2017) M = Month (ex: 9 = September) 

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|---|---|---|---|---|---|---|---|---|---|---|---|---|
|Date Code Key|
|Year|2009|....|2017|2018|2019|2020|2021|2022|2023|2024|
|{|}—_}+___}_+___{¥__|_____+___}__+_}|}__||Code|W|….|E|F|G|H|I|J|K|L|
|Month|Jan|Feb|Mar|Apr|May|Jun|Jul|Aug|Sep|Oct|Nov|Dec|
|Code|1|2|3|4|5|6|7|8|9|O|N|D|
|{||—_}|++}|_}|_+_|||||+|+|_]|

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DMG2301U Document number: DS31848  Rev. 6 - 3 

October 2017 © Diodes Incorporated 

**www.diodes.com** 

**NOT RECOMMENDED FOR NEW DESIGN USE DMG2301L** 

**DMG2301U** 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|||||||
|---|---|---|---|---|---|
|**Characteristic**|||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage|||VDSS|-20|V|
|Gate-Source Voltage|||VGSS|±8|V|
|Continuous Drain Current (Note 5) VGS= -4.5V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|-2.7<br>-2.1|A|
|Continuous Drain Current (Note 5) VGS= -2.5V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|-2.1<br>-1.7|A|
|Pulsed Drain Current(Note 6)|||IDM|-27|A|



## **Thermal Characteristics** 

|**Electrical Characteristics**(@TA= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS(Note 7)**|||||||
|Drain-Source Breakdown Voltage|BVDSS|-20|||V|VGS= 0V,ID= -250µA|
|Zero Gate Voltage Drain Current TJ= +25°C|IDSS|||-1.0|µA|VDS= -16V,VGS= 0V|
|Gate-Source Leakage|IGSS|||±100|nA|VGS=8V,VDS= 0V|
|**ON CHARACTERISTICS(Note 7)**|||||||
|Gate Threshold Voltage<br>~~ASS~~|VGS(TH)<br>~~ASS~~|-0.45<br>~~ASS~~|<br>~~ASS~~|-1.0<br>~~ASS~~|V<br>~~ASS~~|VDS= VGS,ID= -250µA<br>~~ASS~~|
|Static Drain-Source On-Resistance<br>~~ASS~~|RDS(ON)<br>~~ASS~~|<br>~~ASS~~|<br>~~ASS~~|80<br>~~ASS~~|mΩ<br>~~ASS~~|VGS= -4.5V,ID= -2.8A<br>~~ASS~~|
|||||110<br>~~ASS~~||VGS= -2.5V,ID= -2.0A<br>~~ASS~~|
|Forward Transfer Admittance<br>~~ASS~~||Yfs|<br>~~ASS~~|<br>~~ASS~~|10<br>~~ASS~~|<br>~~ASS~~|S<br>~~ASS~~|VDS= -5V,ID= -2.8A<br>~~ASS~~|
|Diode Forward Voltage|VSD||-0.75|-1.0|V|VGS= 0V,IS= -1A|
|**DYNAMIC CHARACTERISTICS(Note 8)**<br>~~——————~~<br>~~ee~~|||||||
|Input Capacitance<br>~~——————~~|Ciss<br>~~——————~~||608||pF<br>~~ee~~|VDS= -6V, VGS= 0V<br>f = 1.0MHz<br>~~ee~~|
|Output Capacitance<br>~~——————~~|Coss<br>~~——————~~||82||pF<br>~~ee~~||
|Reverse Transfer Capacitance<br>~~——————~~|Crss<br>~~——————~~||72||pF<br>~~ee~~||
|Gate Resistance<br>~~——————~~|RG<br>~~——————~~||44.9||Ω<br>~~ee~~|VGS= 0V,VDS= 0V,f = 1.0MHz<br>~~ee~~|
|Total Gate Charge<br>~~——————~~|Qg<br>~~——————~~||6.5||nC<br>~~ee~~|VGS= -4.5V, VDS= -10V, ID= -3A<br>~~ee~~|
|Gate-Source Charge|Qgs||0.9||nC||
|Gate-Drain Charge|Qgd||1.5||nC||
|Turn-On DelayTime|tD(ON)||12.5|40|ns|VDS= -10V, VGS= -4.5V,<br>RL= 10Ω, RG= 1.0Ω, ID= -1A|
|Turn-On Rise Time|tR||10.3|30|ns||
|Turn-Off DelayTime|tD(OFF)||46.5|140|ns||
|Turn-Off Fall Time|tF||22.2|66|ns||



## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

- Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout. 

   6. Repetitive rating, pulse width limited by junction temperature. 

   7. Short duration pulse test used to minimize self-heating effect. 

   8. Guaranteed by design. Not subject to production testing. 

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DMG2301U Document number: DS31848  Rev. 6 - 3 

October 2017 © Diodes Incorporated 

**NOT RECOMMENDED FOR NEW DESIGN USE DMG2301L** 

**DMG2301U** 

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10 VGS = -8.0V VGS = -4.5V 10<br>VGS = -3.0V<br>VGS = -2.5V<br>8 8 V     = -5VDS<br>VGS = -2.0V<br>) [A] ( T<br>6 ff NE 6 y y<br>R<br>R<br>U<br>C<br>4 Vo I [N] A 4<br>R<br>D<br>, D<br>2 VGS = -1.5V - [I] 2 T   = 150°CA<br>T   = 125°CA T   = 85°CA<br>T   = 25°CA<br>0 j— VGS = -1.2V 0 Lp T   = -55°CA<br>0 0.5 1 1.5 2 2.5 3 0 0.5 1 1.5 2 2.5 3<br>-VDS, DRAIN-SOURCE VOLTAGE (V) -V    , GATE-SOURCE VOLTAGE (V)GS<br>Fig. 1 Typical Output Characteristic Fig. 2  Typical Transfer Characteristic<br>0.25 ) 0.16<br>(<br>EC V     = -4.5VGS<br>0.20 TL. N "4<br>/ T [A] 0.12 o e<br>I [S] S<br>E<br>0.15 TR - [R] O [N] Ne T   = 150°CA e<br>E<br>CR 0.08 T   = 125°CA<br>0.10 V GS  = -1.8V O [U] T   = 85°CA<br>IS - [S] Sg eSH oS= T   = 25°CA =<br>VGS = -2.5V I [N] A<br>0.05 VGS = -4.5V RD 0.04 T   = -55°CA<br>, )<br>O [N]<br>(S<br>D<br>0 R 0<br>0.1 1 10 0 2 4 6 8 10<br>KEN -ID, DRAIN-SOURCE CURRENT (A) -I  , DRAIN CURRENT (A)D<br>Fig. 3  Typical On-Resistance  Fig. 4 Typical On-Resistance<br>vs. Drain Current and Gate Voltage  vs. Drain Current and Temperature<br>1.7 0.16<br>1.5 AY Quy<br>VGS = -2.5V 0.12<br>ID = -5A<br>1.3<br>VGS = -5V VGS = -2.5V<br>1.1 Sowa I D = -10A 0.08 oe ID = -5.5A<br>0.9 oan Raper aee<br>VGS = -5V<br>CePTT IT) = 0.04 PeE I D  = -10A Eee<br>0.7<br>0.5 -aaeeenePooper 0 aTssCLL<br>-50 -25 0 25 50 75 100 125 150 -50 -25 LLL 0 25 50 75 LLL 100 125 150<br>TA, AMBIENT TEMPERATURE ((°C)  癈 ) TA, AMBIENT TEMPERATURE ((°C)  癈 )<br>Fig. 5 On-Resistance Variation with Temperature<br>Fig. 6 On-Resistance Variation with Temperature<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>)<br>, DRAIN-SOURCE<br>ON-RESISTANCE (<br>R<br>DSON DSON<br>, DRAIN-SOURCE<br>R<br>ON-RESISTANCE (NORMALIZED)<br> (A)<br>, DRAIN CURREN<br>D<br>-I<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON)<br>R<br>, DRAIN CURRENT (A)<br>D<br>-I<br>**----- End of picture text -----**<br>


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DMG2301U Document number: DS31848  Rev. 6 - 3 

October 2017 © Diodes Incorporated 

**NOT RECOMMENDED FOR NEW DESIGN USE DMG2301L** 

**DMG2301U** 

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1.6 10<br>)<br>( [V]<br>G [E]<br>T [A] 8<br>O [L] 1.2<br>V<br>D<br>O [L] H 7 6 TTT T A  = 25°C T A  = 25 癈<br>S<br>E 0.8<br>R<br>T [H] ie I   = -1mAD<br>4<br>== y 7<br>T [E]<br>G [A] I   = -250µAD<br>, 0.4 —= 2 C<br>G [S(TH)]<br>- [V]<br>0 0 LAY<br>-50 -25 0 25 50 75 100 125 150 0.2 0.4 0.6 0.8 1.0 1.2<br>T  , AMBIENT TEMPERATURE (°C)A -VSD, SOURCE-DRAIN VOLTAGE (V)<br>Fig. 7 Gate Threshold Variation vs. Ambient Temperature Fig. 8 Diode Forward Voltage vs. Current<br>1,000 10,000<br>—————— f = 1MHz aaa See<br>Ciss T   = 150°CA<br>[nA)]<br>1,000<br>T   = 125°CA<br>C [URRENT(]<br>100 QSeea Coss =~ G [E] 100 ~~NTa()a [A] a [E] ee<br>——————— C rss ©S e T   = 85°CA<br>|——fT a e o<br>, [LEAKA]<br>eeee GK We D [SS] 10 a a ee<br>- [I]<br>, ee T   = 25°CA<br>10 BD 1<br>0 4 ian 8 \ 12 Cl 16 q 20 > 0 ee 4 a 8 12 16 20<br>-VDS, DRAIN-SOURCE VOLTAGE (V) . 4 -V    , DRAIN-SOURCE VOLTAGE (V) DS<br>Fig. 9 Typical Total Capacitance Fig. 10 Typical Leakage Current vs. Drain-Source Voltage<br>100 p< See+ 2 _ —— eo oe<br>RDS(on)<br>Limited<br>~ | ET ee<br>10<br>WES<br>> — DC AS ISSOSCHP OTH<br>1<br>PW = 10s<br>ee a P W  = 1s NSRP NSEE<br>P W  = 100ms<br>0.1 PT TJ(m ax) = 150°C PW = 10ms PW SN = 1ms<br>TA = 25°C PW = 100µs<br>VV GS GS  = 4.5V= -4.5V Pya eeNN<br>Single Pulse<br>0.01 DUT on 1 * MRP Board aTill<br>0.1 1 10 100<br>V-VDSDS, DRAIN-SOURCE VOLTAGE (V), DRAIN-SOURCE VOLTAGE (V)<br>FiFi g urur e  11 SOA, Safe Operation Area 11 SOA, Safe Operation Area<br>C, CAPACITANCE (pF)<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(TH)<br>-V<br>, LEAKAGE CURRENT (nA)<br>DSS<br>-I<br>, DRAIN CURRENT (A)<br>D<br>-I<br>, SOURCE CURRENT (A)<br>S<br>-I<br>, DRAIN CURRENT (A)<br>D<br>I<br>**----- End of picture text -----**<br>


4 of 7 **www.diodes.com** 

DMG2301U Document number: DS31848  Rev. 6 - 3 

October 2017 © Diodes Incorporated 

**NOT RECOMMENDED FOR NEW DESIGN USE DMG2301L DMG2301U** -— 

**==> picture [421 x 247] intentionally omitted <==**

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D-<br>1 SSSrrr D = 0.7 —<br>D = 0.5 HT tt HT<br>Fy [TEETER] tt tt tt<br>He mr SE<br>D = 0.3<br>PATE ETI TIT NU mr PETTITT TTI ETT<br>0.1<br>I D = 0.1 TT | TTT IIT ITE |L<br>eeaee nl ag D = 0.9 a<br>RT D = 0.05 TH Ha EE<br>HN ete R JA (t) = r(t) * R JA |<br>ee A | TT nll<br>0.01 74a D = 0.01 D = 0.02 P(pk) R JA t1  = 156°C/W Nl<br>iea ee eee ee ee Rattoe a<br>er[otLanRDASAT D = 0.005 OTTTTUTTT TET ETeeTTT T J  - T «>| A  = P * Rt2 JA (t) PTTTETTTT<br>D = Single Pulse Duty Cycle, D = t1/t2<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000<br>t1, PULSE DURATION TIME (s)<br>Fig. 12 Transient Thermal Response<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


5 of 7 **www.diodes.com** 

DMG2301U Document number: DS31848  Rev. 6 - 3 

October 2017 © Diodes Incorporated 

**NOT RECOMMENDED FOR NEW DESIGN USE DMG2301L** 

**DMG2301U** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

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SOT23<br>**----- End of picture text -----**<br>


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All 7°<br>H SOT23<br>GAUGE PLANE Dim  Min  Max  Typ<br>a J = 0.25 ——— A  0.37  0.51  0.40<br>K1 K B  1.20  1.40  1.30<br>C  2.30  2.50  2.40<br>a D  0.89  1.03  0.915<br>A M F  0.45  0.60  0.535<br>G  1.78 2.05 1.83<br>L L1<br>Ao),— iEeei! ——— H  2.80 3.00 2.90<br>J  0.013 0.10 0.05<br>K  0.890 1.00 0.975<br>K1  0.903  1.10  1.025<br>C B<br>L  0.45  0.61  0.55<br>co ——— L1  0.25  0.55  0.40<br>M  0.085 0.150  0.110<br>= ———— a  0°  8°  --<br>D All Dimensions in mm<br>F G<br>TL ee At [—]<br>Suggested Pad Layout<br>Please see http://www.diodes.com/package-outlines.html for the latest version.<br>SOT23<br>Dimensions  Value (in mm)<br>Y<br>C  2.0<br>X  0.8<br>X1  1.35<br>Y1 RZ C Y  0.9<br>Y1  2.9<br>Ge<br>a X X1<br>**----- End of picture text -----**<br>


6 of 7 **www.diodes.com** 

DMG2301U Document number: DS31848  Rev. 6 - 3 

October 2017 © Diodes Incorporated 

**NOT RECOMMENDED FOR NEW DESIGN USE DMG2301L** 

**DMG2301U** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings & noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. **LIFE SUPPORT** Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: we A.   Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or WS 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. NY Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its oN representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2017, Diodes Incorporated **www.diodes.com** KAY 

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