# Power MOSFET, P Channel, 20 V, 820 mA, 0.75 ohm, SOT-323, Surface Mount

![Product image](https://novapart.co/image/farnell:3127311/)

**URL**: https://novapart.co/products/DMG1013UWQ-7/power-mosfet-p-channel-20-v-820-ma-075-ohm-sot-323
**SKU**: DMG1013UWQ-7
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.0800
**Stock**: 10+
**Lead Time**: 78 days (indicative)

## Description

Transistor Polarity:P Channel; Continuous Drain Current Id:-820mA; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.5ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | AEC-Q101 |
| Power Dissipation | 310mW |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 4.5V |
| Transistor Case Style | SOT-323 |
| Drain Source Voltage Vds | 20V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 820mA |
| Drain Source On State Resistance | 0.75ohm |
| Gate Source Threshold Voltage Max | 1V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3127311/)

**DMG1013UWQ** [sd 

**P-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Features** 

- Low On-Resistance 

- Low Gate Threshold Voltage 

- Low Input Capacitance 

- Fast Switching Speed 

- Low Input/Output Leakage 

- **ESD Protected** 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

## **Mechanical Data** 

   - Case: SOT323 

   - Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

   - Moisture Sensitivity: Level 1 per J-STD-020 

   - Terminal Connections: See Diagram Below 

   - Terminals: Finish - Matte Tin Annealed over Alloy 42 Leadframe. Solderable per MIL-STD-202, Method 208 **e3** 

   - Weight: 0.006 grams (Approximate) 

- **Qualified to AEC-Q101 Standards for High Reliability** 

- **PPAP Capable (Note 4)** 

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ESD PROTECTED<br>**----- End of picture text -----**<br>


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Drain<br>D<br>Gate<br>   Gate   Protection Source G S<br>   Diode<br>Top View  Equivalent Circuit  Top View<br>**----- End of picture text -----**<br>


**Ordering Information** (Note 5) 

**Part Number Case Packaging** DMG1013UWQ-7 SOT323 3000 / Tape & Reel ~~——————~~ DMG1013UWQ-13 SOT323 10000 / Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html. 

5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. 

## **Marking Information** 

PA1 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: D = 2016) M = Month (ex: 9 = September) 

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PA1 YM = Date Code Marking<br>Y = Year (ex: D = 2016)<br>M = Month (ex: 9 = September)<br>Date Code Key<br>Year 2008  … 2015  2016  2017  2018  2019  2020  2021 2022 2023 2024<br>aEE Code V  …  C  D  E  F  G  H  I  J  K  L<br>Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec<br>Code 1  2  3 4  5 6 7  8 9 O N  D<br>Ce<br>YM<br>**----- End of picture text -----**<br>


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DMG1013UWQ Document number: DS38559  Rev. 1 - 2 

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**DMG1013UWQ** 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||||
|---|---|---|---|---|---|
|**Characteristic**|||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage|||VDSS|-20|V|
|Gate-Source Voltage|||VGSS|±6|V|
|Continuous Drain Current (Note 6)|Steady<br>State|TA= +25°C<br>TA= +85°C|ID|-0.82<br>-0.54|A|
|Pulsed Drain Current(Note 7)|||IDM|-3|A|



## **Thermal Characteristics** 

|**Thermal Characteristics**||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Power Dissipation(Note 6)|PD|0.31|W|
|Thermal Resistance,Junction to Ambient@TA= +25°C(Note 6)|RθJA|398|°C/W|
|Operatingand Storage Temperature Range|TJ,TSTG|-55 to +150|°C|



Notes: 6. Device mounted on FR-4 PCB, with minimum recommended pad layout. 7. Repetitive rating, pulse width limited by junction temperature. 

## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**|**Symbol**|**Min**|**Typ **|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS(Note 8) **|||||||
|Drain-Source Breakdown Voltage<br>~~ep~~|BVDSS<br>~~ep~~|-20<br>~~ep~~|-<br>~~ep~~|-<br>~~ep~~|V<br>~~ep~~|VGS= 0V,ID= -250μA<br>~~ep~~|
|Zero Gate Voltage Drain Current TJ= +25°C<br>~~ep~~|IDSS<br>~~ep~~|-<br>~~ep~~|-<br>~~ep~~|-100<br>~~ep~~|nA<br>~~ep~~|VDS= -20V,VGS= 0V<br>~~ep~~|
|Gate-Source Leakage<br>~~ep~~|IGSS<br>~~ep~~|-<br>~~ep~~|-<br>~~ep~~|±2.0<br>~~ep~~|μA<br>~~ep~~|VGS= ±4.5V,VDS= 0V<br>~~ep~~|
|**ON CHARACTERISTICS(Note 8) **|||||||
|Gate Threshold Voltage|VGS(TH)|-0.5|-|-1.0<br>~~|~~|V<br>~~|~~|VDS= VGS,ID= -250μA|
|Static Drain-Source On-Resistance<br>~~ET~~|RDS(ON)<br>~~ET~~|-<br>~~ET~~|0.5<br>0.7<br>1.0<br>~~ET~~|0.75<br>1.05<br>1.5<br>~~ET~~<br>~~|~~|Ω<br>~~ET~~<br>~~|~~|VGS= -4.5V,ID= -430mA<br>~~ET~~|
|||||||VGS= -2.5V,ID= -300mA<br>~~ET~~|
|||||||VGS= -1.8V,ID= -150mA<br>~~ET~~|
|Forward Transfer Admittance<br>~~ET~~||Yfs|<br>~~ET~~|-<br>~~ET~~<br>~~QOS~~|0.9<br>~~ET~~<br>~~GO~~|-<br>~~ET~~<br>~~|~~<br>~~(OQ~~|S<br>~~ET~~<br>~~|~~<br>~~(OQ~~|VDS= -10V,ID= -250mA<br>~~ET~~<br>~~(OQ~~|
|Diode Forward Voltage<br>~~GO~~|VSD<br>~~GO~~|~~GO~~<br>~~QOS~~|-0.8<br>~~GO~~<br>~~GO~~|-1.2<br>~~|~~<br>~~GO~~<br>~~(OQ~~|V<br>~~|~~<br>~~GO~~<br>~~(OQ~~|VGS= 0V,IS= -150mA<br>~~GO~~<br>~~(OQ~~|
|**DYNAMIC CHARACTERISTICS(Note 9)**<br>~~QOS GO~~<br>~~(OQ~~<br>~~en~~|||||||
|Input Capacitance<br>~~ee~~|Ciss<br>~~ee~~|-<br>~~ee~~|59.76<br>~~ee~~|-<br>~~ee~~|pF<br>~~ee~~<br>~~en~~|VDS= -16V, VGS= 0V,<br>f = 1.0MHz<br>~~ee~~|
|Output Capacitance<br>~~ee~~|Coss<br>~~ee~~|-<br>~~ee~~|12.07<br>~~ee~~|-<br>~~ee~~|pF<br>~~ee~~<br>~~en~~||
|Reverse Transfer Capacitance<br>~~ee~~|Crss<br>~~ee~~|-<br>~~ee~~|6.36<br>~~ee~~|-<br>~~ee~~|pF<br>~~ee~~<br>~~en~~||
|Total Gate Charge|Qg|-|622.4|-|pC<br>~~en~~|VGS= -4.5V, VDS= -10V,<br>ID= -250mA<br>~~ee~~|
|Gate-Source Charge|Qgs|-|100.3|-|pC||
|Gate-Drain Charge<br>~~————~~|Qgd|-|132.2|-<br>~~ee~~|pC<br>~~ee~~||
|Turn-On DelayTime<br>~~————~~|tD(ON)|-|5.1|-<br>~~ee~~|ns<br>~~ee~~|VDD= -10V, VGS= -4.5V,<br>RL= 47Ω, RG= 10Ω,<br>ID= -200mA<br>~~ee~~|
|Turn-On Rise Time<br>~~————~~|tR|-|8.1|-<br>~~ee~~|ns<br>~~ee~~||
|Turn-Off DelayTime<br>~~————~~|tD(OFF)|-|28.4|-<br>~~ee~~|ns<br>~~ee~~||
|Turn-Off Fall Time<br>~~————~~|tF|-|20.7|-<br>~~ee~~|ns<br>~~ee~~||



Notes: 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to production testing. 

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2.0  2<br>1.8  2 1.8 e VDS = -5V y //<br>VGS = -3.0V -55 ℃ 125 ℃<br>1.6  kr VGS = -4.0V e 1.6 Say 25 ℃ ) 150 ℃<br>1.4  1.4 85 ℃<br>1.2  a —f/ VGS = -2.5V 1.2 ff ee, Aa<br>1.0  VGS = -4.5V 1<br>0.8  Bie VGS = -6.0V To 0.8 ff<br>fe f f<br>0.6  ae VGS = -2.0V 0.6 fe<br>0.4  | Ane 0.4 fe<br>0.2  | 0.2 TOACELEEIS<br>VGS = -1.5V<br>Ane<br>0.0  bo 0 DD<br>0 1 2 3 4 5 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5<br>VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 1. Typical Output Characteristic Figure 2. Typical Transfer Characteristic<br>2 2<br>1.8 VGS = -1.8V 1.8<br>1.6 21 aaeneeee 1.6 Oe<br>1.4 1.4 ID = -430mA<br>1.2 -HEEECPCEEE 1.2 a i TIE<br>1 VGS = -2.5V 1<br>0.8 Laas eeeee 0.8 en eee<br>ID = -150mA<br>0.6 CC oo 0.6 A X<br>PEEP a<br>0.4 VGS = -4.5V 0.4<br>0.2 SFEC r ~ 0.2 o TEEo<br>0 FCCC CCE 0 ee<br>0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 1 2 3 4 5 6<br>ID, DRAIN-SOURCE CURRENT (A)  VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 3. Typical On-Resistance vs Drain Current and  Figure 4. Typical Transfer Characteristic<br>Gate Voltage<br>1.2 1.8<br>VGS = -4.5V<br>1 1.6<br>att tt 150 ℃ LEE LL<br>125 ℃<br>0.8 1.4<br>a= tL ELE LEV<br>85 ℃ VGS = -2.5V, ID = -500mA<br>0.6 1.2<br>SS Pe<br>25 ℃<br>0.4 1 VGS = -4.5V, ID = -1A<br>-55 ℃<br>0.2 TEE E EL 0.8 soe |)<br>TTT LL EE an<br>0 PEELE EEE EL 0.6 PEEL Edt<br>0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 -50 -25 0 25 50 75 100 125 150<br>ID, DRAIN CURRENT (A) TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 5. Typical On-Resistance vs Drain Current and  Figure 6. On-Resistance Variation with Junction<br>Junction Temperature Temperature<br>, DRAIN CURRENT (A)ID , DRAIN CURRENT (A)ID<br>, DRAIN-SOURCE ON-RESISTANCE (Ω) , DRAIN-SOURCE ON-RESISTANCE (Ω)<br>RDS(ON) RDS(ON)<br>(NORMALIZED)<br>, DRAIN-SOURCE ON-RESISTANCE<br>,  DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON)<br>R<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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1.5 1.2<br>1.2<br>1<br>VGS = -2.5V, ID = -500mA<br>0.9 HH E LE ID = -1mA<br>aol 0.8 R R<br>0.6<br>ID = -250μA<br>VGS = -4.5V, ID = -1A<br>0.6<br>0.3 rT | Se<br>0 Pree eC 0.4 LLELLEEL EP<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE ( ℃ ) TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 7. On-Resistance Variation with Junction  Figure 8. Gate Threshold Variation vs Junction<br>Temperature Temperature<br>2 100<br>f = 1MHz<br>1.8 VGS = 0V<br>ee | ———$—=—— Ciss<br>1.6<br>1.4<br>e e ——<br>1.2<br>1 ee | aa 10 ee Coss<br>0.8 e/a ———<br>C rss<br>0.6 AA ee ee<br>TJ = 85 [o] C<br>0.4 TJ = 150 [o] C<br>TJ = 25 [o] C<br>0.2 TJ = 125 [o] C<br>TJ = -55 [o] C<br>0 1<br>0 5 10 15 20<br>0 0.3 0.6 0.9 1.2 1.5<br>-VDS, DRAIN-SOURCE VOLTAGE (V)<br>VSD, SOURCE-DRAIN VOLTAGE (V) Figure 10. Typical Total Capacitance Fig. 9 Typical Total Capacitance<br>Figure 9. Diode Forward Voltage vs Current<br>10<br>RDS(ON) Limited PW =100µs<br>PW =1ms<br>1<br>0.1 PW =10ms<br>PW =100ms<br>PW =1s<br>PW =10s<br>0.01 TJ(Max)=150 ℃ DC<br>TC=25 ℃<br>Single Pulse<br>DUT on 1*MRP Board<br>VGS=-4.5V<br>0.001<br>0.1 1 10 100<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 11. SOA, Safe Operation Area<br>, GATE THRESHOLD VOLTAGE (V)<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)<br>GS(TH)<br>V<br>DS(ON)<br>R<br>, SOURCE CURRENT (A)<br>IS<br>, DRAIN CURRENT (A)<br>ID<br>C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


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1<br>D=0.7<br>D=0.9<br>D=0.5<br>o e<br>PT D=0.3 AUIE TTT reece TTT TTI1 TTI TTT<br>0.1 IITame<br>o D=0.1 yf eI ETI IN UT<br>PeAT<br>mtril Am iii ft Tri oT Tn<br>T D=0.05 e<br>a A<br>Re a a ee ||<br>0.01 u D=0.02 o A IEg?LIE EI EI LIU<br>Af D=0.01 ieS<br>a a a a ae ee) ee<br>ert ATI tT Titi TTT fT PP TT<br>D=0.005<br>W Z RθJA (t)=r(t) * RθJA Ean<br>LL a ee | | RθJA=380 ℃ /W LI<br>Duty Cycle, D=t1/t2<br>D=Single Pulse<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1, PULSE DURATION TIME (sec)<br>Figure 12. Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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## **Package Outline Dimensions** 

Please see AP02001 at http://www.diodes.com/_files/datasheets/ap02001.pdf for the latest version. 

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SOT323<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
D<br>a<br>A2<br>c a<br>A1 e L<br>A,<br>b<br>E E1<br>ay<br>F e1<br>**----- End of picture text -----**<br>


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— SOT323<br>Dim  Min  Max  Typ<br>A1  0.00 0.10 0.05<br>A2  0.90 1.00 0.95<br>b  0.25 0.40 0.30<br>c  0.10 0.18 0.11<br>D  1.80 2.20 2.15<br>E  2.00 2.20 2.10<br>E1  1.15 1.35 1.30<br>e  0.650 BSC<br>e1  1.20 1.40 1.30<br>F  0.375 0.475 0.425<br>L  0.25 0.40 0.30<br>a 8°<br>All Dimensions in mm<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see AP02001 at http://www.diodes.com/_files/datasheets/ap02001.pdf for the latest version. 

**SOT323** 

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X<br>Y<br>Y1 f G a<br>C<br>“pio<br>**----- End of picture text -----**<br>


|**Dimensions**|**Value**<br>**(in mm)**|
|---|---|
|**C**|0.650|
|**G**|1.300|
|**X**|0.470|
|**Y**|0.600|
|**Y1**|2.500|



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DMG1013UWQ Document number: DS38559  Rev. 1 - 2 

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**DMG1013UWQ** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending.  Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference.  Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2016, Diodes Incorporated 

**www.diodes.com** 

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