# Power MOSFET, N Channel, 20 V, 630 mA, 0.4 ohm, SOT-523, Surface Mount

![Product image](https://novapart.co/image/farnell:3127307/)

**URL**: https://novapart.co/products/DMG1012TQ-7/power-mosfet-n-channel-20-v-630-ma-04-ohm-sot-523
**SKU**: DMG1012TQ-7
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.0600
**Stock**: 1000+
**Lead Time**: 78 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:630mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.3ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1V;

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | AEC-Q101 |
| Power Dissipation | 280mW |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 4.5V |
| Transistor Case Style | SOT-523 |
| Drain Source Voltage Vds | 20V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 630mA |
| Drain Source On State Resistance | 0.4ohm |
| Gate Source Threshold Voltage Max | 1V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3127307/)

**DMG1012T** 7 

**N-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Features** 

- Low On-Resistance 

- Low Gate Threshold Voltage 

- Low Input Capacitance 

- Fast Switching Speed 

- Low Input/Output Leakage 

- **ESD Protected up to 2kV** 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

## **Mechanical Data** 

   - Case: SOT523 

   - Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

   - Moisture Sensitivity: Level 1 per J-STD-020 

   - Terminals: Finish  Matte Tin Annealed over Alloy 42 Leadframe. Solderable per MIL-STD-202, Method 208 

   - Terminal Connections: See Diagram 

   - Weight: 0.002 grams (Approximate) 

- **Qualified to AEC-Q101 Standards for High Reliability** 

- **PPAP Capable (Note 4)** 

SOT523 

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ESD PROTECTION TO 2kV ESD PROTECTED TO 2kV 2 @ ©<br>**----- End of picture text -----**<br>


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D<br>G S<br>Equivalent Circuit  Top View<br>(Note 6)<br>**----- End of picture text -----**<br>


Top View 

## **Ordering Information** (Note 5) 

|**Ordering Informationg Information Information** (Note 5)|**Ordering Informationg Information Information** (Note 5)|**Ordering Informationg Information Information** (Note 5)|**Ordering Informationg Information Information** (Note 5)|
|---|---|---|---|
|||||
|**Part Number**|**Qualification**|**Case**|**Packaging**|
|DMG1012T-7|Commercial|SOT523|3000/Tape & Reel|
|DMG1012T-13|Commercial|SOT523|10000/Tape & Reel|
|DMG1012TQ-7|Automotive|SOT523|3000/Tape &Reel|



- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 

   2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. For more information, please refer to https://www.diodes.com/quality/. 

   5. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

   6. The ESD gate protection diode is only designed to protect against ESD events. No gate-source voltage greater than the maximum VGSS rating (given on page 2) can be applied. 

## **Marking Information** 

NA1 = Product Type Marking Code **NA1 YM** YM = Date Code Marking Y = Year (ex: F = 2018) M = Month (ex: 9 = September) 

Date Code Key **Year 2009 … 2018 2019 2020 2021 2022 2023 2024 2025 2026** ~~[||__|~~ **Code** W … ~~|~~ F ~~—~~ G ~~|~~ H I J K L M ~~+¥T_~~ N **Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code** 1 2 3 4 5 6 7 8 9 O N D ~~of~~ 

1 of 7 **www.diodes.com** 

DMG1012T Document number: DS31783  Rev. 6 - 2 

September 2018 © Diodes Incorporated 

**DMG1012T** 

**Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||
|---|---|---|---|---|---|
|**Characteristic**|||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage|||VDSS|20|V|
|Gate-Source Voltage|||VGSS|±6|V|
|Continuous Drain Current (Note 7)|Steady<br>State|TA= +25C<br>TA= +85C|ID|0.63<br>0.45|A|
|Pulsed Drain Current|||IDM|3|A|



## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Total Power Dissipation(Note 7)|PD|0.28|W|
|Thermal Resistance,Junction to Ambient(Note 7)|RJA|452|°C/W|
|Operating and Storage Temperature Range|TJ,TSTG|-55 to +150|°C|



**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**<br>~~SS~~|**Symbol**|**Min**<br>~~—————————e~~|**Typ **<br>~~—————————e~~|**Max**<br>~~—————————e~~|**Unit**<br>~~—————————e~~|**Test Condition**<br>~~—————————e~~|
|**OFF CHARACTERISTICS(Note 8) **<br>~~SS~~<br>~~—————————e~~|||||||
|Drain-Source Breakdown Voltage<br>~~SS~~|BVDSS|20<br>~~—————————e~~|—<br>~~—————————e~~|—<br>~~—————————e~~|V<br>~~—————————e~~|VGS= 0V,ID= 250μA<br>~~—————————e~~|
|Zero Gate Voltage Drain Current TJ= +25°C<br>~~SS~~<br>~~a~~|IDSS<br>~~a~~|—<br>~~—————————e~~<br>~~a~~|—<br>~~—————————e~~<br>~~a~~|100<br>~~—————————e~~<br>~~a~~|nA<br>~~—————————e~~<br>~~a~~|VDS= 20V,VGS= 0V<br>~~—————————e~~<br>~~a~~|
|Gate-Source Leakage<br>~~a~~|IGSS<br>~~a~~|—<br>~~a~~|—<br>~~a~~|±1.0<br>~~a~~|µA<br>~~a~~|VGS= ±4.5V,VDS= 0V<br>~~a~~|
|**ON CHARACTERISTICS(Note 8) **|||||||
|Gate Threshold Voltage|VGS(TH)|0.5|—|1.0|V|VDS= VGS,ID= 250μA|
|Static Drain-Source On-Resistance<br>~~ee~~|RDS(ON)<br>~~ee~~|—<br>~~ee~~|0.3<br>~~ee~~|0.4<br>~~ee~~|Ω<br>~~ee~~|VGS= 4.5V,ID= 600mA<br>~~ee~~|
||||0.4<br>~~ee~~|0.5<br>~~ee~~||VGS= 2.5V,ID= 500mA<br>~~ee~~|
||||0.5<br>~~ee~~|0.7<br>~~ee~~||VGS= 1.8V,ID= 350mA<br>~~ee~~|
|Forward Transfer Admittance<br>~~ee~~||Yfs|<br>~~ee~~|—<br>~~ee~~|1.4<br>~~ee~~<br>~~GO~~|—<br>~~ee~~<br>~~(Of~~|S<br>~~ee~~<br>~~(Of~~|VDS= 10V,ID= 400mA<br>~~ee~~<br>~~(Of~~|
|Diode Forward Voltage<br>~~GO~~|VSD<br>~~GO~~|—<br>~~GO~~|0.7<br>~~GO~~<br>~~GO~~|1.2<br>~~GO~~<br>~~(Of~~|V<br>~~GO~~<br>~~(Of~~|VGS= 0V,IS= 150mA<br>~~GO~~<br>~~(Of~~|
|**DYNAMIC CHARACTERISTICS(Note 9)**<br>~~GO~~<br>~~(Of~~<br>~~a~~|||||||
|Input Capacitance<br>~~a~~<br>~~CO~~|Ciss<br>|—<br>|60.67<br>|—<br>|pF|VDS= 16V, VGS= 0V,<br>f = 1.0MHz|
|Output Capacitance<br>~~a~~<br>~~CO~~|Coss<br>|—<br>|9.68<br>|—<br>|pF||
|Reverse Transfer Capacitance<br>~~CO———~~|Crss<br>|—<br>~~a~~|5.37<br>~~a~~|—<br>~~a~~|pF||
|Total Gate Charge<br>~~———~~|Qg<br>|—<br>~~a~~|736.6<br>~~a~~|—<br>~~a~~|pC|VGS= 4.5V, VDS= 10V,<br>ID= 250mA<br>~~ee~~|
|Gate-Source Charge<br>~~———~~|Qgs<br>|—<br>~~a~~|93.6<br>~~a~~|—<br>~~a~~|pC||
|Gate-Drain Charge<br>~~———~~<br>~~——<—~~|Qgd<br>|—<br>~~a~~|116.6<br>~~a~~|—<br>~~a~~<br>~~ee~~|pC<br>~~ee~~||
|Turn-On DelayTime<br>~~———~~<br>~~——<—~~|tD(ON)<br>|—<br>~~a~~|5.1<br>~~a~~|—<br>~~a~~<br>~~ee~~|ns<br>~~ee~~|VDD= 10V, VGS= 4.5V,<br>RL= 47Ω, RG= 10Ω,<br>ID= 200mA<br>~~ee~~|
|Turn-On Rise Time<br>~~——— ~~<br>~~——<—~~|tR<br>|—<br> ~~a~~|7.4<br>~~a~~|—<br>~~a~~<br>~~ee~~|ns<br>~~ee~~||
|Turn-Off DelayTime<br>~~——<—~~|tD(OFF)|—|26.7|—<br>~~ee~~|ns<br>~~ee~~||
|Turn-Off Fall Time<br>~~——<—~~|tF|—|12.3|—<br>~~ee~~|ns<br>~~ee~~||



9. Guaranteed by design. Not subject to product testing. 

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**DMG1012T** CT 

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**----- Start of picture text -----**<br>
1.5 1.5<br>VGS = 8.0V<br>VGS = 4.5V<br>1.2 [ VGS = 3.0V 1.2 V     = 5VDS<br>VGS = 2.5V ) [A] (<br>VGS = 2.0V N [T]<br>0.9 0.9<br>|eee Ae<br>C [URRE]<br>0.6 I [N] 0.6<br>|A VGS = 1.5V<br>D [RA]<br>, D T   = 150°CA<br>I T   = 125°CA<br>0.3 Moo 0.3 COU T   = 85°CA<br>T   = 25°CA<br>T   = -55°CA<br>0 VGS = 1.2V 0<br>0 }—______— 1 2 3 4 5 0 0.5 yy 1 1.5 2 2.5 3<br>VDS, DRAIN-SOURCE VOLTAGE (V) V    , GATE SOURCE VOLTAGE (V)GS<br>Fig. 1 Typical Output Characteristics<br>Fig. 2 Typical Transfer Characteristics<br>0.8 ) 0.6<br>a<br>0.7<br>0.5 V     = 4.5VGS<br>0.6 T   = 150°CA<br>ee ee<br>0.5 a a [RESISTANCE(] 0.4 SS T   = 125°CA<br>VGS = 1.8V [N-] O T   = 85°CA<br>0.4 ee 0.3 A S<br>T   = 25°CA<br>VGS = 2.5V<br>0.3<br>FT VGS = 4.5V [SOURCE] 0.2 “T EE T   = -55°CA<br>0.2<br>D [RAIN-]<br>SS, E E<br>0.1 ee , [)] N 0.1<br>( [O]<br>D [S]<br>R<br>0 a 0 |<br>0 0.3 0.6 0.9 1.2 1.5 0 0.3 0.6 i 0.9 | 1.2 1.5<br>ID, DRAIN-SOURCE CURRENT (A) I  , DRAIN CURRENT (A)D<br>Fig. 3 Typical On-Resistance  Fig. 4  Typical Drain-Source On-Resistance<br>vs. Drain Current and Gate Voltage vs. Drain Current and Temperature<br>1.7 0.8<br>1.5<br>EERREEEP<br>0.6<br>1.3 V GS  = 2.5V<br>ID = 500mA<br>1.1 of VIGSD = 1.0A = 4.5V 0.4 I VDGS  = 500mA  = 2.5V<br>eT<br>0.9<br>er VGS = 4.5V<br>0.2 I D  = 1.0A<br>0.7<br>Titi tl<br>0.5 TUTTE 0<br>-50 -25 0 25 50 TY 75 100 TT 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE ( ( °C) 癈 ) TJ, JUNCTION TEMPERATURE ( ( °C) 癈 )<br>Fig. 5 On-Resistance Variation with Temperature Fig. 6 On-Resistance Variation with Temperature<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>, DRAIN-SOURCE<br>DS(ON)<br>R<br>ON-RESISTANCE (NORMALIZED)<br>, DRAIN CURRENT (A)<br>ID<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON)<br>R<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


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© Diodes Incorporated 

**DMG1012T** 

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**----- Start of picture text -----**<br>
1.6<br>) [V] (<br>E<br>G<br>T [A]<br>L 1.2<br>O<br>V<br>D<br>L<br>H [O]<br>S<br>0.8 I   = 250µAD<br>T [HRE]<br>T [E]<br>G [A]<br>0.4<br>,<br>( [TH)]<br>G [S]<br>V<br>0 |<br>-50 -25 0 25 50 75 100 125 150<br>T  , AMBIENT TEMPERATURE (°C)A<br>Fig. 7 Gate Threshold Variation vs. Ambient Temperature<br>100<br>— ee<br>[s—idzC C iss [<br>a a<br>\<br>10 Coss<br>————L——<br>a a |<br>C rss<br>ne<br>es<br>a<br>1<br>| | ff<br>0 5 10 15 20<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 9 Typical Capacitance<br>10<br>RDS(ON)  PW = 1ms<br>Limited  PW = 100µs<br>ee ent ee<br>Hak NN L [|<br>1  RN IN<br>| 7| | TAN? OUND<br>ONY PRSNUONPt ET<br>0.1  PW = 10ms<br>| PW = 100ms                                                            J eNO El<br>TJ(Max) = 150 ℃ PW = 1s  Ne Pt ET<br>0.01  TC = 25 ℃ PW = 10s  SE<br>Single Pulse  Se DC  See<br>DUT on 1*MRP  EAeH<br>Board  ee<br>VGS = 10V lll<br>0.001<br>0.1  1  10  100<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 11 SOA, Safe Operation Area<br>C, CAPACITANCE (pF)<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(TH)<br>V<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


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10<br>8<br>6<br>TA T = A  25  = 25 °C 癈<br>4<br>2<br>0 Pit tte EzE EL<br>0.2 0.4 0.6 0.8 1.0 1.2<br>VSD, SOURCE-DRAIN VOLTAGE (V)<br>Fig. 8 Diode Forward Voltage vs. Current<br>) 1,000<br>ee<br>N [T(nA] a |<br>———————<br>T   = 150°CA<br>C [URRE]<br>100<br>e e<br>G [E]<br>A<br>K T   = 125°CA<br>A<br>L [E]<br>O [URCE] 10 T   = 85°CA<br>e e ee<br>I [N-S] a T   = 25°CA<br>D [RA]<br>, S<br>I D [S] 1 a<br>0 4 8 12 16 20<br>V    , DRAIN-SOURCE VOLTAGE (V) DS<br>Fig. 10 Typical Drain-Source Leakage Current<br>vs. Drain-Source Voltage<br>, SOURCE CURRENT (A)<br>IS<br>, DRAIN-SOURCE LEAKAGE CURRENT (nA)<br>IDSS<br>**----- End of picture text -----**<br>


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September 2018 © Diodes Incorporated 

**DMG1012T** 

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**----- Start of picture text -----**<br>
1 _anee ee Hoe<br>Ie D = 0.7<br>TTI<br>D = 0.5<br>ETN RE<br>LEeo<br>PTE D = 0.3 | |<br>0.1 LAIPIBS D = 0.1 AH TTTUTIre7, PEIN ATIerrIII 8EEUIT T PETELEEUNI UI TUPTEE<br>D = 0.9<br>PS D = 0.05 Se RE EE HE HE<br>bo, Me a |<br>ST ET Tt<br>eet) D = 0.02 | R θJA R  (t) = r(t) * R JA (t) = r(t) * R θJAJA TT<br>RθJA R= 486JA = 486 ℃ /W  癈 /W<br>0.01 PM LUTTE VU Ul<br>D = 0.01 HH<br>PO, [ee] 4 P(pk)<br>=i ae eet || t1 | | | CS<br>D = 0.005<br>ee eee t 2 [TTT<br>Za TJ - T k— A = P * RJA(t) LT<br>D = Single Pulse Duty Cycle, D = t1/t2<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000<br>tt11, PULSE DURATION TIME (s), PULSE DURATION TIME (s)<br>Fig. 11 Transient Thermal ResponseFig. 12 Transient Thermal Response<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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DMG1012T Document number: DS31783  Rev. 6 - 2 

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**DMG1012T** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **SOT523** 

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**----- Start of picture text -----**<br>
SOT523<br>Dim  Min  Max  Typ<br>A1  0.00 0.10 0.05<br>E E1 A2  0.60 0.80 0.75<br>A3  0.45 0.65 0.50<br>b 0.15 0.30 0.22<br>c 0.10 0.20 0.12<br>ee a ES==<br>D  1.50 1.70 1.60<br>E  1.45 1.75 1.60<br>faa ——a E1  0.75 0.85 0.80<br>b<br>e  0.50 BSC<br>a e1 Es<br>e1  0.90 1.10 1.00<br>D L  0.20 0.40 0.33<br>a 0° --  8°<br>All Dimensions in mm<br>A2<br>A3<br>c a<br>peoh A1 e  J, L a<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**SOT523** 

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**----- Start of picture text -----**<br>
Y1 C<br>Y<br>X<br>X1<br>‘Bl _<br>**----- End of picture text -----**<br>


|**Dimensions**|**Value**<br>**(in mm)**|
|---|---|
|**C**|1.29|
|**X**|0.40|
|**X1**|0.70|
|**Y**|0.51|
|**Y1**|1.80|



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DMG1012T Document number: DS31783  Rev. 6 - 2 

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**DMG1012T** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2018, Diodes Incorporated 

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---

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> distributors in Europe and Asia. Unlike standard online stores, Novapart
> specialises in exactly the cases where availability is the real problem: stock
> shortages, allocation crises, end-of-life components, and cost-reduction
> alternatives. They guarantee delivery even during supply chain disruptions and
> typically respond to quote requests within one business day.
> [Request a quote](https://novapart.co/quote/) — it's free and there's no
> minimum order.