# Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 8.1 A, 8.1 A, 0.032 ohm
**URL**: https://novapart.co/products/DMC3032LSD-13/dual-mosfet-complementary-n-and-p-channel-30-v-81
**SKU**: DMC3032LSD-13
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Dual MOSFETs
**Price**: €0.1310
**Stock**: 1000+
**Lead Time**: 78 days (indicative)
## Specifications
| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | Complementary N and P Channel |
| Product Range | - |
| Qualification | - |
| Transistor Case Style | SOIC |
| Operating Temperature Max | 150°C |
| Power Dissipation N Channel | 2.5W |
| Power Dissipation P Channel | 2.5W |
| Drain Source Voltage Vds N Channel | 30V |
| Drain Source Voltage Vds P Channel | 30V |
| Continuous Drain Current Id N Channel | 8.1A |
| Continuous Drain Current Id P Channel | 8.1A |
| Drain Source On State Resistance N Channel | 0.032ohm |
| Drain Source On State Resistance P Channel | 0.039ohm |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:3944046/)
## **Product Summaryy Device BVDSSDSS** Q1 30V Q2 -30V **Description ption tion ption tion tion** (RDS(ON)DS(ON)) and yet maintain superior switching performance, making it ) and yet maintain superior switching performance, making it **Applications pplications lications** Power Management Functions | ~~DIODES.~~
- **DMC3032LSD**
- **COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET**
- **Product Summaryy Features ID Max** Low On-Resistance
- **Device BVDSSDSS RDS(ON) Max TA = +25°C** N-Channel: 32mΩ @ 10V **(Notes 5 & 7)** 46mΩ @ 4.5V
- 32mΩ @ VGS = 10V 8.1A P-Channel: 39mΩ @ -10V
- Q1 30V 46mΩ @ VGS = 4.5V 6.1A 53mΩ @ -4.5V 39mΩ @ VGS = -10V -7A Low Input Capacitance
- Q2 -30V 53mΩ @ VGS = -4.5V -5.6A Fast Switching Speed Low Input/Output Leakage Complementary Pair MOSFET
- **Description ption tion ption tion tion** **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** This MOSFET has been designed to minimize the on-state resistance **Halogen and Antimony Free. “Green” Device (Note 3)** DS(ON)) and yet maintain superior switching performance, making it ) and yet maintain superior switching performance, making it **Qualified to AEC-Q101 Standards for High Reliability**
- ideal for high efficiency power management applications. **Mechanical Data**
- **Applications pplications lications** Case: SO-8 Power Management Functions Case Material: Molded Plastic, “Green” Molding Compound.
- ~~DIODES. &. C7~~ Analog Switch UL Flammability Classification Rating 94V-0 Load Switch Moisture Sensitivity: Level 1 per J-STD-020 Terminals Connections: See Diagram Terminals: Finish - Matte Tin Annealed over Copper Lead Frame. Solderable per MIL-STD-202, Method 208 **e3**
## Complementary Pair MOSFET **Description ption tion ption tion tion** This MOSFET has been designed to minimize the on-state resistance (RDS(ON)DS(ON)) and yet maintain superior switching performance, making it ) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
- Power Management Functions
- Analog Switch
- Load Switch
- Marking Information (See Page 2)
- Ordering Information
- Weight: 0.072 grams (Approximate)
SO-8
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D2 D2 D1 D1
S2 D2
G2 D2
G2 G2 G1 G1
S1 D1
G1 D1
oe
S 22 S 1 1
Top View Top View N-Channel MOSFET P-Channel MOSFET
N-Channel MOSFET P-Channel MOSFET
**----- End of picture text -----**
## **Ordering Information** (Note 4)
|**Ordering Informationg Information Information** (Note 4)|||
|---|---|---|
|**Part Number**|**Case**|**Packaging**|
|DMC3032LSD-13|SO-8|2,500/Tape &Reel|
- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
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**DMC3032LSD**
## **Marking Information**
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**----- Start of picture text -----**
8 5
noon
= Manufacturer’s Marking
C3032LD = Product Type Marking Code
C3032LD YYWW = Date Code Marking
YY WW YY or YY = Year (ex: 18 = 2018)
WW = Week (01 to 53)
1 4
**----- End of picture text -----**
## **Maximum Ratings N-CHANNEL – Q1** (@TA = +25°C, unless otherwise specified.)
|**Maximum Ratings N-CHANNEL – Q1gs N-CHANNEL – Q1s N-CHANNEL – Q1**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratings N-CHANNEL – Q1gs N-CHANNEL – Q1s N-CHANNEL – Q1**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratings N-CHANNEL – Q1gs N-CHANNEL – Q1s N-CHANNEL – Q1**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratings N-CHANNEL – Q1gs N-CHANNEL – Q1s N-CHANNEL – Q1**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratings N-CHANNEL – Q1gs N-CHANNEL – Q1s N-CHANNEL – Q1**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratings N-CHANNEL – Q1gs N-CHANNEL – Q1s N-CHANNEL – Q1**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|
|||||||
|**Characteristic**|||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage|||VDSS|30|V|
|Gate-Source Voltage|||VGSS|±20|V|
|Continuous Drain Current (Note 5)|Steady
State|TA = +25°C
TA = +85°C|ID|8.1
5.1|A|
|Pulsed Drain Current(Note 6)|||IDM|25|A|
## **Maximum Ratings P-CHANNEL – Q2** (@TA = +25°C, unless otherwise specified.)
|**Maximum Ratings P-CHANNEL – Q2gs P-CHANNEL – Q2s P-CHANNEL – Q2**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratings P-CHANNEL – Q2gs P-CHANNEL – Q2s P-CHANNEL – Q2**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratings P-CHANNEL – Q2gs P-CHANNEL – Q2s P-CHANNEL – Q2**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratings P-CHANNEL – Q2gs P-CHANNEL – Q2s P-CHANNEL – Q2**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratings P-CHANNEL – Q2gs P-CHANNEL – Q2s P-CHANNEL – Q2**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratings P-CHANNEL – Q2gs P-CHANNEL – Q2s P-CHANNEL – Q2**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|
|||||||
|**Characteristic**|||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage|||VDSS|-30|V|
|Gate-Source Voltage|||VGSS|±20|V|
|Continuous Drain Current (Note 5)|Steady
State|TA = +25°C
TA = +85°C|ID|-7.0
-4.5|A|
|Pulsed Drain Current(Note 6)|||IDM|-25|A|
## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)
|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Power Dissipation(Note 5)|PD|2.5|W|
|Thermal Resistance,Junction to Ambient(Note 5)|RθJA|50|°C/W|
|Operatingand Storage Temperature Range|TJ, TSTG|-55 to +150|°C|
Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Repetitive rating, pulse width limited by junction temperature.
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**DMC3032LSD**
## **Electrical Characteristics N-CHANNEL – Q1** (@TA = +25°C, unless otherwise specified.)
|**Electrical Characteristics N-CHANNEL – Q1**|**Electrical Characteristics N-CHANNEL – Q1 **(@TA = +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Typ **|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS(Note 7) **|||||||
|Drain-Source Breakdown Voltage|BVDSS|30|—|—|V|VGS= 0V,ID= 250µA|
|Zero Gate Voltage Drain Current TJ= +25°C|IDSS|—|—|1|µA|VDS= 30V,VGS= 0V|
|Gate-Source Leakage|IGSS|—|—|±100|nA|VGS= ±20V,VDS= 0V|
|**ON CHARACTERISTICS(Note 7)**|||||||
|Gate Threshold Voltage|VGS(TH)|1|1.45|2.1|V|VDS= VGS,ID= 250µA|
|Static Drain-Source On-Resistance|RDS(ON)|—|23|32|mΩ|VGS= 10V,ID= 7A|
||||32|46||VGS= 4.5V,ID= 5.6A|
|Forward Transfer Admittance||Yfs||—|7.6|—|S|VDS= 5V,ID= 7A|
|Diode Forward Voltage(Note 7)|VSD|—|0.7|1|V|VGS= 0V,IS= 1A|
|**DYNAMIC CHARACTERISTICS(Note 8)**
~~———~~|||||||
|Input Capacitance
~~———~~|Ciss|—|404.5|—|pF|VDS= 15V, VGS= 0V,
f = 1MHz|
|Output Capacitance
~~———~~|Coss|—|51.8|—|pF||
|Reverse Transfer Capacitance
~~———~~|Crss|—|45.1|—|pF||
|Gate Resistance
~~———~~|Rg|—|1.5|—|Ω|VDS= 0V,VGS= 0V,f = 1MHz|
|Total Gate Charge(10V)
~~———~~|Qg|—|9.2|—|nC|VGS= 10V, VDS= 15V,
ID= 5.8A
~~ee~~|
|Gate-Source Charge|Qgs|—|1.2|—|nC||
|Gate-Drain Charge
~~————~~|Qgd|—|1.8|—
~~ee~~|nC
~~ee~~||
|Turn-On DelayTime
~~————~~|tD(ON)|—|3.4|—
~~ee~~|ns
~~ee~~|VGS= 10V, VDS= 15V,
RG= 3Ω, RL= 2.6Ω
~~ee~~|
|Turn-On Rise Time
~~————~~|tR|—|6.18|—
~~ee~~|ns
~~ee~~||
|Turn-Off DelayTime
~~————~~|tD(OFF)|—|13.92|—
~~ee~~|ns
~~ee~~||
|Turn-Off Fall Time
~~————~~|tF|—|2.84|—
~~ee~~|ns
~~ee~~||
Notes: 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing.
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20
16 Ag V GS = 8.0V EEL
VGS = 4.5V
12 ree CELE
8 V GS = 3.0V
4 [-—
Ko
VGS = 2.0V VGS = 2.5V
0 [—-—
0 1 2 3 4 5
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
, DRAIN CURRENT (A)
ID
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2016 V = 5VDS /
)
N [T(A]
12 LLL
C [URRE]
I [N] 8
D [RA]
,I D T = 150°CA
4 Sea T = 125°CA ae
T = 85°CA A
T = 25°CA
0 yr T = -55°CA
0 1 2 3 4
V , GATE SOURCE VOLTAGE (V)GS
Fig. 2 Typical Transfer Characteristics
, DRAIN CURRENT (A)
ID
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1 ) 0.08
(
CNE V = 4.5VGS T = 150°CA
A
T
0.06
I [S] S
E T = 125°CA
- [R]
Sn VGS = 2.5V eee [N] O T = 85°CA
0.1 CE 0.04
R
[U] O T = 25°CA
V GS = 4.5V - [S]
[N] IA T = -55°CA
eee rT R 0.02
D
| VGS = 8.0V ,
( [ON)]
D [S]
0.01 R 0
LAME TUITE LEI
0.1 1 10 100 0 4 8 12 16 20
ID, DRAIN-SOURCE CURRENT (A) I , DRAIN CURRENT (A)D
Fig. 3 Typical On-Resistance Fig. 4 Typical Drain-Source On-Resistance
vs. Drain Current and Gate Voltage vs. Drain Current and Temperature
1.7 0.07
TLLELLY 0.06 Pitt
1.5
/ ty | 7
0.05
1.3
coor} = PC 0.04 VIGSD = 5.0A = 4.5V
1.1
BaZa VGS = 4.5V 0.03 re
ID = 5.0A
0.9 POT) 0.02 eee VIGSD = 10A = 10V
Pa VGS = 10V eT | tf
0.7 KO ID = 10A 0.01 TTT
0.5 0 EEE
TL EEL LL PP 7 TTT
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE ((°C) 癈 ) TJ, JUNCTION TEMPERATURE ( °C 癈 )
Fig. 5 On-Resistance Variation with Temperature Fig. 6 On-Resistance Variation with Temperature
2.0 20
[V)] 18
1.6 16
eset | L LL I = 1mAD | SEES
14 T T A A = = 25 25°° 癈 C
[OLTAGE(] V
1.2 LE P I = 250µA RR D L 12 FEE A
[LD] O
10
[SH] E
R
0.8 TH ) P RE 8 CECE
T [H]
6
[ATE] G
, 0.4 ST TTT TTP 4 C CEECEAoeEECEAoeEEoeEEEE
G [S(TH)] 2
V
0 TTT TT 0 HEECOEYECOEYEYE
-50 -25 0 25 50 75 100 125 150 0.2 0.4 0.6 0.8 1.0 1.2
T , AMBIENT TEMPERATURE (°C)A VSD, SOURCE-DRAIN VOLTAGE (V)SD, SOURCE-DRAIN VOLTAGE (V), SOURCE-DRAIN VOLTAGE (V)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
DS(ON)
, DRAIN-SOURCE
R
ON-RESISTANCE (NORMALIZED)
, DRAIN-SOURCE ON-RESISTANCE (Ω)
DS(ON)
R
, GATE-THRESHOLD VOLTAGE (V)
GS(TH)
V
DS(ON)
)
, DRAIN-SOURCE ON-RESISTANCE (
R
, SOURCE CURRENT (A)
ISS
)
, DRAIN-SOURCE ON-RESISTANCE (
R
DS(ON)
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**----- Start of picture text -----**
20
18
16
SEES
14 T T A A = = 25 25°° 癈 C
12 FEE A
10
8 CECE
6
4 C CEECEAoeEECEAoeEEoeEEEE
2
0 HEECOEYECOEYEYE
0.2 0.4 0.6 0.8 1.0 1.2
VSD, SOURCE-DRAIN VOLTAGE (V)SD, SOURCE-DRAIN VOLTAGE (V), SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
, SOURCE CURRENT (A)
ISS
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© Diodes Incorporated
**DMC3032LSD** [|
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1,000 aa (OCC |
f = 1MHz
_a
re C iss ee
\
100
C oss
C rss
[| a ee
po | | ft }
10
0 5 10 15 20 25 30
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Capacitance
C, CAPACITANCE (pF)
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) 10,000 ee
ee
N [T(nA]
ee ee
1,000 aeeea eeeee
C [URRE] T = 150°CA
a CC |
G [E]
A
K
AL [E] 100 i es ee T = 125°CA
O [URCE] Rs
10
I [N-S] T = 85°CA
D [RA] =aa = a =
T = 25°CA
,I D [S] [S] 1 ——__TTa _ Sd T = -55°CA
0 5 10 15 20 25 30
V , DRAIN-SOURCE VOLTAGE (V) DS
Fig. 10 Typical Drain-Source Leakage Current
vs. Drain-Source Voltage
, DRAIN-SOURCE LEAKAGE CURRENT (nA)
IDS
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**DMC3032LSD**
## **Electrical Characteristics P-CHANNEL** (@TA = +25°C, unless otherwise specified.)
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|||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|Characteristic|Symbol|Min|Typ|Max|Unit|Test Condition|
|OFF CHARACTERISTICS (Note 7)|
|Drain-Source Breakdown Voltage|BVDSS|-30|—|—|V|VGS = 0V, ID = -250μA|
|Zero Gate Voltage Drain Current TJ = +25°C|IDSS|—|—|-1|µA|VDS = -30V, VGS = 0V|
|Gate-Source Leakage|IGSS|—|—|±100|nA|VGS = ±20V, VDS = 0V|
|ON CHARACTERISTICS (Note 7)|
|Gate Threshold Voltage|VGS(TH)|-1|-1.7|-2.2|V|VDS = VGS, ID = -250µA|
|30|39|VGS = -10V, ID = -4.3A|
|Static Drain-Source On-Resistance|RDS(ON)|—|42|53|mΩ|VGS = -4.5V, ID = -3.7A|
|ee|Forward Transfer Admittance||Yfs||—|7|—|S|VDS = -5V, ID = -4.3A|
|Diode Forward Voltage (Note 7)|VSD|—|-0.75|-1|V|VGS = 0V, IS = -1.7A|
|DYNAMIC CHARACTERISTICS (Note 8)|
|Input Capacitance|Ciss|—|1002|—|pF|
|Output Capacitance|Coss|—|125|—|pF|VDS = -15V, VGS = 0V,|
|f = 1MHz|
|Reverse Transfer Capacitance|Crss|—|118|—|pF|
|———|Gate Resistance|Rg|—|13|—|Ω|VDS = 0V, VGS = 0V, f = 1MHz|
|Total Gate Charge (-4.5V)|ee|Qg|—|10.1|—|nC|
|Total Gate Charge (-10V)|Qg|—|21.1|—|nC|VGS = -4.5V/-10V, VDS = -15V,|
|Gate-Source Charge|Qgs|—|2.8|—|nC|ID = -6A|
|Gate-Drain Charge|Qgd|—|3.2|—|nC|
|Turn-On Delay Time|tD(ON)|—|10.1|—|ns|
|Turn-On Rise Time|tR|—|6.5|—|ns|VGS = -10V, VDS = -15V,|
|Turn-Off Delay Time|tD(OFF)|—|50.1|—|ns|RG = 6Ω , ID = -1A|
|Turn-Off Fall Time|tF|—|22.2|—|ns|
|—<—<—|ee|
|Notes:|7. Short duration pulse test used to minimize self-heating effect.|
|8. Guaranteed by design. Not subject to production testing.|
|20|20|
|V = -10VGS|
|V = -4.5VGS|V = -5VDS|
|V = -4.0VGS|
|[A)]|T|[(]|15|L|L|V = -3.5VGS|L|)|[A]|(T|15|a|T|aa|
|[N]|RRUCE|10|NERRUC|10|
|[IN]|RDA|I|[N]|ARD|
|,I|D|5|fe|V = -3.0VGS|,I|D|5|T = 150°CA|
|T = 125°CA|
|T = 85°CA|T = 25°CA|
|0|V = -2.5VGS|0|T = -55°CA|
|0|0.5|1|1.5|2|2.5|3|3.5|4|4.5|5|0|1|2|3|4|5|6|
|V , DRAIN-SOURCE VOLTAGE (V)DS|V , GATE SOURCE VOLTAGE (V)GS|
|Fig. 11 Typical Output Characteristics|Fig. 12 Typical Transfer Characteristics|
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) 0.10 ) 0.10
(
E [(] E
C C V = -10VGS
N
T [A] 0.08 0.08
I [S] S T = 150°CA
E [SISTAN] E
- [R] O [N] 0.06 - [R][N] O 0.06 T = 125°CA
E E T = 85°CA
C C
R R
O [U] 0.04 V = -4.5VGS 0.04 e e T = 25°CA
- [S] - [SOU]
I [N] A V = -10VGS [IN] RA T = -55°CA
D, [R] 0.02 D, 0.02
( [ON)]
[S(ON)] D D [S]
R R
0 0 | tf
0 5 10 15 20 0 5 10 15 20
I , DRAIN-SOURCE CURRENT (A)D I , DRAIN CURRENT (A)D
Fig. 13 Typical On-Resistance Fig. 14 Typical Drain-Source On-Resistance
vs. Drain Current and Gate Voltage vs. Drain Current and Temperature
1.7 ) 0.08
(
0.07 cL
) 1.5 N [CE]
T [A]
0.06
I [ZED] L I [S] S
A
M 1.3 V = -4.5VGS
O [URCE] O [R] [RE] N [-] 0.05 I = -5AD
O
I [N-S] ( [N] E 1.1 LLL a 0.04 ange? a8
C
D [RA] N V = -10VGS U [RCE]
, ) T [A] I = -10AD O 0.03
( [ON] SD I [S] SE 0.9 ee ane Le [S] I [N-] a perl p V = -10VI = -10AGSD a
R - [R] | D [RA] 0.02 | TT
O [N] 0.7 V = -4.5VGSI = -5AD Aan , 0.01 TUT
( [ON)]
D [S]
R
0.5 <-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)J T , JUNCTION TEMPERATURE (°C)J
Fig. 15 On-Resistance Variation with Temperature Fig. 16 On-Resistance Variation with Temperature
2.5 20 PF | | fl
[V)]
[E(] G 2.0 16
T [A] I = -1mAD
fe TA = 25°C T A = 25 癈
V [OL]
D 1.5 I = -250µAD 12 a
O [L] PF | |ff
[SH] E
R 1.0 8 Fffl Uf
T [H]
ee
[ATE] G
, 0.5 4 PF ee eee
( [TH)]
G [S] PF |[ff]
V
0 in 0 PF | 4AYF ||Uf |
-50 -25 0 25 50 75 100 125 150 0.4 0.6 0.8 1.0 1.2 1.4
T , AMBIENT TEMPERATURE (°C)A VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 17 Gate Threshold Variation vs. Ambient Temperature Fig. 18 Diode Forward Voltage vs. Current
, DRAIN-SOURCE ON-RESISTANCE (Ω) , DRAIN-SOURCE ON-RESISTANCE (Ω)
DS(ON) DS(ON)
R R
, DRAIN-SOURCE
DS(ON)
R
ON-RESISTANCE (NORMALIZED) , DRAIN-SOURCE ON-RESISTANCE (Ω)
DS(ON)
R
, GATE-THRESHOLD VOLTAGE (V)
GS(TH)
V
, SOURCE CURRENT (A)
IS
**----- End of picture text -----**
7 of 10 **www.diodes.com**
DMC3032LSD Document number: DS32153 Rev. 3 - 2
November 2018
© Diodes Incorporated
**DMC3032LSD**
**==> picture [483 x 221] intentionally omitted <==**
**----- Start of picture text -----**
10,000 a OO 10,000 SeSe cc |
es f = 1MHz [nA)] (T [N] E ee
R
ee ee ee RU 1,000 o o T = 150°CA
C
1,000
Ciss T = 125°CA
———— a
100
L [EAKAGE]
NK C oss a ee ee CE e e T = 85°CA
R
100 Crss
—— - [SOU] 10 a e e
- > [IN] RA —————
a D ————————————
, S T = 25°CA
S
10 I D 1 fT [| |
0 5 10 15 20 25 30 0 5 10 15 20 25 30
VDS, DRAIN-SOURCE VOLTAGE (V) V , DRAIN-SOURCE VOLTAGE (V) DS
Fig. 19 Typical Capacitance Fig. 20 Typical Drain-Source Leakage Current
vs. Drain-Source Voltage
, DRAIN-SOURCE LEAKAGE CURRENT (nA)
IDS
C, CAPACITANCE (pF)
**----- End of picture text -----**
8 of 10 **www.diodes.com**
DMC3032LSD Document number: DS32153 Rev. 3 - 2
November 2018 © Diodes Incorporated
**DMC3032LSD**
|
**==> picture [474 x 306] intentionally omitted <==**
**----- Start of picture text -----**
ge Outline Dimensions e Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
SO-8
SO-8
Dim Min Max Typ
A 1.40 1.50 1.45
E A1 0.10 0.20 0.15
b 0.30 0.50 0.40
1 c 0.15 0.25 0.20
D 4.85 4.95 4.90
E 5.90 6.10 6.00
E1 3.80 3.90 3.85
b E0 3.85 3.95 3.90
E1 e -- -- 1.27
h h - -- 0.35
Q L 0.62 0.82 0.72
7° Q 0.60 0.70 0.65
c All Dimensions in mm
A 4°± 3° =
G auge Plane
S eating Plane
L
e A1 E0
D
9° (All sides)
R 0.1
45°
**----- End of picture text -----**
## **Package Outline Dimensions e Outline Dimensions**
Please see http://www.diodes.com/package-outlines.html for the latest version.
## **Suggested Pad Layout**
Please see http://www.diodes.com/package-outlines.html for the latest version.
**SO-8**
**==> picture [148 x 176] intentionally omitted <==**
**----- Start of picture text -----**
ha X1
Y1
Y
O00: C X
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**==> picture [103 x 55] intentionally omitted <==**
**----- Start of picture text -----**
Dimensions Value (in mm)
C 1.27
X 0.802
X1 4.612
Y 1.505
Y1 6.50
**----- End of picture text -----**
9 of 10 **www.diodes.com**
DMC3032LSD Document number: DS32153 Rev. 3 - 2
November 2018 © Diodes Incorporated
**DMC3032LSD IMPORTANT NOTICE** DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. **LIFE SUPPORT** Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: | 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2018, Diodes Incorporated **www.diodes.com**[;] DMC3032LSD 10 of 10 November 2018 Document number: DS32153 Rev. 3 - 2 **www.diodes.com** © Diodes Incorporated
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
November 2018 © Diodes Incorporated
## Links
- [View this product on Novapart](https://novapart.co/products/DMC3032LSD-13/dual-mosfet-complementary-n-and-p-channel-30-v-81)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/dmc3032lsd-13/mosfet-dual-n-p-ch-30v-8-1a/dp/3944046)
---
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