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DMB2227A-7

Bipolar Transistor Array, Complementary NPN and PNP, 40 V, 600 mA, 300 mW, 40 hFE, SOT-26

  • Manufacturer: DIODES INC.
  • Product type: Bipolar Junction Transistor Arrays - BJT
  • Product variants: No other variants available. No other names.
  • No. of Pins: 6Pins
  • DC Current Gain hFE: 40hFE
  • Transistor Mounting: Surface Mount
  • Transistor Polarity: Complementary NPN and PNP
  • DC Collector Current: 600mA
  • Power Dissipation Pd: 300mW
  • Power Dissipation NPN: 300mW
  • Power Dissipation PNP: 300mW
  • Transistor Case Style: SOT-26
  • Transition Frequency NPN: 300MHz
  • Transition Frequency PNP: 200MHz
  • Operating Temperature Max: 150°C
  • DC Current Gain hFE Min NPN: 40hFE
  • DC Current Gain hFE Min PNP: 40hFE
  • Continuous Collector Current NPN: 600mA
  • Continuous Collector Current PNP: 600mA
  • Collector Emitter Voltage Max NPN: 40V
  • Collector Emitter Voltage Max PNP: 40V
  • Collector Emitter Voltage V(br)ceo: 40V
Delivery and price
Units per pack 500
Price 0.184 €
Current stock N/A
Lead time 30 days