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DMB2227A-7
Bipolar Transistor Array, Complementary NPN and PNP, 40 V, 40 V, 600 mA, 600 mA, 300 mW
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: DIODES INC.
- Product type: Bipolar Junction Transistor Arrays - BJT
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 6Pins
- Product Range: -
- Qualification: -
- Transistor Mounting: Surface Mount
- Transistor Polarity: Complementary NPN and PNP
- Power Dissipation NPN: 300mW
- Power Dissipation PNP: 300mW
- Transistor Case Style: SOT-26
- Transition Frequency NPN: 300MHz
- Transition Frequency PNP: 200MHz
- Operating Temperature Max: 150°C
- DC Current Gain hFE Min NPN: 40hFE
- DC Current Gain hFE Min PNP: 40hFE
- Continuous Collector Current NPN: 600mA
- Continuous Collector Current PNP: 600mA
- Collector Emitter Voltage Max NPN: 40V
- Collector Emitter Voltage Max PNP: 40V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.101 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**DMB2227A** ~~_—__~~
## DrDES
## **COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR**
## **Features**
- Complementary Pair
Complementary Pair A **SOT-26** • Epitaxial Planar Die Construction C1 E1 C2 **Dim Min Max Typ** • One 2222A Type (NPN), One 2907A Type (PNP) B C **A** 0.35 0.50 0.38 • Ideal for Low Power Amplification and Switching **B** 1.50 1.70 1.60 • **Lead Free By Design/RoHS Compliant (Note 2)** B1 E2 B2 **C** 2.70 3.00 2.80 • **"Green Device" (Note 3)** al ~~——o te~~ **D** – – 0.95 **Mechanical Data** ~~H~~ **F** – – 0.55 ~~OO ee~~ • Case: SOT-26 K M **H** 2.90 3.10 3.00 • Case Material: Molded Plastic, “Green” Molding **J** 0.013 0.10 0.05 Compound. UL Flammability Classification Rating 94V-0 ~~ANT~~ J ~~J. FAREee eee~~ • Moisture Sensitivity: Level 1 per J-STD-020C D F L **K** 1.00 1.30 1.10 • Terminals: Finish - Matte Tin annealed over Copper **L** 0.35 0.55 0.40 leadframe. Solderable per MIL-STD-202, Method 208 **M** 0.10 0.20 0.15 • Terminal Connections: See Diagram ~~oo=~~ • Ordering & Date Code Information: See Page 6 Note: E1, B1, and C1 = 2222A Type (NPN) E2, B2, and C2 = 2907A Type (PNP) ~~Pf]~~ α 0° ~~|~~ 8° – • Marking Information: See Page 6 Type marking indicates orientation **All Dimensions in mm** • Weight: 0.006 grams (approximate) C1 E1 C2 B1 E2 B2 ~~Ba~~
## **Maximum Ratings: 2222A Type (NPN)** @TA = 25°C unless otherwise specified
|**Maximum Ratings: 2222A Type (NPN)gs: 2222A Type (NPN)s: 2222A Type (NPN)ype (NPN)e (NPN)(NPN)NPN))** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratings: 2222A Type (NPN)gs: 2222A Type (NPN)s: 2222A Type (NPN)ype (NPN)e (NPN)(NPN)NPN))** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratings: 2222A Type (NPN)gs: 2222A Type (NPN)s: 2222A Type (NPN)ype (NPN)e (NPN)(NPN)NPN))** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratings: 2222A Type (NPN)gs: 2222A Type (NPN)s: 2222A Type (NPN)ype (NPN)e (NPN)(NPN)NPN))** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|
|---|---|---|---|
|||||
|**Characteristic**|**Symbol **|**2222A(NPN)**|**Unit**|
|Collector-Base Voltage|VCBO|75|V|
|Collector-Emitter Voltage|VCEO|40|V|
|Emitter-Base Voltage|VEBO|6.0|V|
|Collector Current - Continuous|IC|600|mA|
## **Maximum Ratings: 2907A Type (PNP)** @TA = 25°C unless otherwise specified
|**Maximum Ratings: 2907A Type (PNP)gs: 2907A Type (PNP)s: 2907A Type (PNP)ype (PNP)e (PNP)(PNP)PNP))** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratings: 2907A Type (PNP)gs: 2907A Type (PNP)s: 2907A Type (PNP)ype (PNP)e (PNP)(PNP)PNP))** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratings: 2907A Type (PNP)gs: 2907A Type (PNP)s: 2907A Type (PNP)ype (PNP)e (PNP)(PNP)PNP))** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratings: 2907A Type (PNP)gs: 2907A Type (PNP)s: 2907A Type (PNP)ype (PNP)e (PNP)(PNP)PNP))** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|
|---|---|---|---|
|||||
|**Characteristic**|**Symbol **|**2907A(PNP)**|**Unit**|
|Collector-Base Voltage|VCBO|-60|V|
|Collector-Emitter Voltage|VCEO|-60|V|
|Emitter-Base Voltage|VEBO|-5.0|V|
|Collector Current - Continuous|IC|-600|mA|
## **Maximum Ratings: Total** @TA = 25°C unless otherwise specified
|**Maximum Ratings: Totalgs: Totals: Total** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratings: Totalgs: Totals: Total** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratings: Totalgs: Totals: Total** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratings: Totalgs: Totals: Total** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|
|---|---|---|---|
|||||
|**Characteristic**|**Symbol **|**Value**|**Unit**|
|Power Dissipation(Note 1)|PD|300|mW|
|Thermal Resistance,Junction to Ambient(Note 1)|RθJA|417|°C/W|
|Operating and Storage Temperature Range|Tj, TSTG|-55 to +150|°C|
- Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
DS31217 Rev. 4 - 2
1 of 6 **www.diodes.com**
DMB2227A
© Diodes Incorporated
## **Electrical Characteristics: 2222A Type (NPN)** @TA = 25°C unless otherwise specified
|**Characteristic**|**Symbol **|**Min**|**Max **|**Unit**|**Test Condition **|
|---|---|---|---|---|---|
|**OFFCHARACTERISTICS (Note 4)**||||||
|Collector-Base Breakdown Voltage|V(BR)CBO|75|⎯|V|IC= 10μA,IE= 0|
|Collector-Emitter Breakdown Voltage|(BR)CBO<br>V(BR)CEO|40|⎯|V|IC= 10mA,IB= 0|
|Emitter-Base Breakdown Voltage|(BR)CEO<br>V(BR)EBO|6.0|⎯|V|IE= 10μA,IC= 0|
|Collector Cutoff Current|(BR)EBO<br>ICBO|⎯|10|nA<br>μA|VCB= 60V, IE= 0<br>VCB= 60V,IE= 0,TA= 150°C|
|Collector Cutoff Current|ICEX|⎯|10|nA|VCE= 60V,VEB(OFF)= 3.0V|
|Emitter Cutoff Current|IEBO|⎯|10|nA|EB(OFF)<br>VEB= 3.0V,IC= 0|
|Base Cutoff Current|IBL|⎯|20|nA|VCE= 60V,VEB(OFF)= 3.0V|
|EB(OFF)<br>**ON CHARACTERISTICS (Note 4)**||||||
|DC Current Gain|hFE|35<br>50<br>75<br>100<br>40<br>50<br>35|⎯<br>⎯<br>⎯<br>300<br>⎯<br>⎯<br>⎯|⎯|IC= 100μA, VCE= 10V<br>IC= 1.0mA, VCE= 10V<br>IC= 10mA, VCE= 10V<br>IC= 150mA, VCE= 10V<br>IC= 500mA, VCE= 10V<br>IC= 10mA, VCE= 10V, TA= -55°C<br>IC= 150mA,VCE= 1.0V|
|Collector-Emitter Saturation Voltage|VCE(SAT)|⎯|0.3<br>1.0|V|IC= 150mA, IB= 15mA<br>IC= 500mA,IB= 50mA|
|Base-Emitter Saturation Voltage<br>~~a~~|VBE(SAT)<br>~~a~~|0.6<br>⎯<br>~~a~~|1.2<br>2.0<br>~~a~~|V<br>~~a~~|IC= 150mA, IB= 15mA<br>IC= 500mA,IB= 50mA<br>~~a~~|
|**SMALLSIGNALCHARACTERISTICS**||||||
|Output Capacitance|Cobo|⎯|8|pF|VCB= 10V,f = 1.0MHz,IE= 0|
|Input Capacitance<br>~~ee~~|Cibo<br>~~ee~~|—<br>~~ee~~|25<br>~~ee~~|pF<br>~~ee~~|VEB= 0.5V,f = 1.0MHz,IC= 0<br>~~ee~~|
|Current Gain-Bandwidth Product<br>~~ee~~|fT<br>~~ee~~|300<br>~~ee~~|⎯<br>~~ee~~|MHz<br>~~ee~~|VCE= 20V, IC= 20mA,<br>f = 100MHz<br>~~ee~~|
|**SWITCHING CHARACTERISTICS**<br>~~ee~~||||||
|DelayTime<br>~~Be~~|td<br>~~Be~~|⎯<br>~~Be~~|10<br>~~Be~~|ns<br>~~Be~~|VCC= 30V, IC= 150mA,<br>VBE(off)= - 0.5V,IB1= 15mA<br>~~Be~~|
|Rise Time<br>~~Be~~|tr<br>~~Be~~|⎯<br>~~Be~~|25<br>~~Be~~|ns<br>~~Be~~||
|Storage Time<br>~~a~~|ts<br>~~a~~|⎯<br>~~a~~|225<br>~~a~~|ns<br>~~a~~|VCC= 30V, IC= 150mA,<br>IB1= IB2= 15mA<br>~~a~~|
|Fall Time<br>~~a~~|tf<br>~~a~~|⎯<br>~~a~~|60<br>~~a~~|ns<br>~~a~~||
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DMB2227A
© Diodes Incorporated
**www.diodes.com**
## LIES.
**Electrical Characteristics: 2907A Type (PNP)** @TA = 25°C unless otherwise specified
|**Characteristic**<br>~~ee~~|**Symbol **<br>~~ee~~|**Min**<br>~~ee~~|**Max **<br>~~ee~~|**Unit**<br>~~ee~~|**Test Condition **<br>~~ee~~|
|---|---|---|---|---|---|
|**OFFCHARACTERISTICS (Note 4)**<br>~~ee~~||||||
|Collector-Base Breakdown Voltage<br>~~ee~~<br>~~a~~|V(BR)CBO<br>~~ee~~<br>~~ee~~|-60<br>~~ee~~<br>|⎯<br>~~ee~~<br>~~a~~|V<br>~~ee~~<br>~~a~~|IC= -10μA,IE= 0<br>~~ee~~|
|Collector-Emitter Breakdown Voltage<br>~~a~~<br>~~a~~|(BR)CBO<br>V(BR)CEO<br>~~a~~<br>~~ee~~|-60<br>~~a~~<br>|⎯<br>~~a~~<br>~~a~~|V<br>~~a~~<br>~~a~~|IC= -10mA,IB= 0<br>~~a~~|
|Emitter-Base Breakdown Voltage<br>~~a~~<br>~~a~~|(BR)CEO<br>V(BR)EBO<br>~~a~~<br>~~ee~~|-5.0<br>~~a~~<br>|⎯<br>~~a~~<br>~~a~~|V<br>~~a~~<br>~~a~~|IE= -10μA,IC= 0<br>~~a~~|
|Collector Cutoff Current<br>~~a~~|(BR)EBO<br>ICBO<br>~~ee~~<br>~~OO~~<br>~~a~~|⎯<br><br>~~OO~~<br>~~a~~|-10<br>~~a~~<br>~~OO~~|nA<br>μA<br>~~a~~|VCB= -50V, IE= 0<br>VCB= -50V,IE= 0,TA= 125°C|
|Collector Cutoff Current<br>~~a~~<br>~~es~~|ICEX<br>~~ee ~~<br>~~OO~~<br>~~es~~<br>~~a~~|⎯<br> <br>~~OO~~<br>~~es~~<br>~~a~~|-50<br> ~~a~~<br>~~OO~~<br>~~es~~|nA<br>~~a~~<br>~~es~~|VCE= -30V,VEB(OFF)= -0.5V<br>~~es~~|
|Base Cutoff Current<br>~~es~~|IBL<br>~~es~~<br>~~a~~|⎯<br>~~es~~<br>~~a~~|-50<br>~~es~~|nA<br>~~es~~|EB(OFF)<br>VCE= -30V,VEB(OFF)= -0.5V<br>~~es~~|
|EB(OFF)<br>**ON CHARACTERISTICS (Note 4)**<br>~~a a~~||||||
|DC Current Gain|hFE|75<br>100<br>100<br>100<br>50|⎯<br>⎯<br>⎯<br>300<br>⎯|⎯|IC= -100µA, VCE= -10V<br>IC= -1.0mA, VCE= -10V<br>IC= -10mA, VCE= -10V<br>IC= -150mA, VCE= -10V<br>IC= -500mA,VCE= -10V|
|Collector-Emitter Saturation Voltage<br>~~a~~|VCE(SAT)<br>~~OOO~~|⎯<br>~~OOO~~|-0.4<br>-1.6<br>~~OOO~~|V|IC= -150mA, IB= -15mA<br>IC= -500mA,IB= -50mA|
|Base-Emitter Saturation Voltage<br>~~TT~~|VBE(SAT)<br>~~TT~~|⎯<br>~~TT~~|-1.3<br>-2.6<br>~~TT~~|V<br>~~TT~~|IC= 150mA, IB= 15mA<br>IC= 500mA,IB= 50mA<br>~~TT~~|
|**SMALLSIGNALCHARACTERISTICS**<br>~~TT~~<br>~~GDGO~~<br>~~QO~~||||||
|Output Capacitance<br>~~Gs~~|Cobo<br>~~Gs~~<br>~~ee~~|⎯<br>~~Gs~~<br>~~GD~~|8.0<br>~~Gs~~<br>~~GO~~|pF<br>~~Gs~~<br>~~QO~~|VCB= -10V,f = 1.0MHz,IE= 0<br>~~Gs~~|
|Input Capacitance<br>~~eS~~|Cibo<br>~~eS~~<br>~~ee~~|—<br>~~GD~~<br>~~eS~~|30<br>~~GO~~<br>~~eS~~|pF<br>~~QO~~<br>~~eS~~|VEB= -2.0V,f = 1.0MHz,IC= 0<br>~~eS~~|
|Current Gain-Bandwidth Product<br>~~eS~~<br>~~sd~~|fT<br>~~eS~~<br>~~ee~~<br>~~sd~~|200<br>~~eS~~<br>~~sd~~|⎯<br>~~eS~~<br>~~sd~~|MHz<br>~~eS~~<br>~~sd~~|VCE= -20V,IC= -50mA,f = 100MHz<br>~~eS~~<br>~~sdr:-~~|
|**SWITCHING CHARACTERISTICS**<br>~~ee~~<br>~~sdr:-~~||||||
|Turn-On Time<br>~~sd~~<br>~~OO~~|ton<br>~~sd~~<br>~~OO~~|⎯<br>~~sd~~<br>~~OO~~|45<br>~~sd~~<br>~~OO~~|ns<br>~~sd~~<br>~~OO~~|VCC= -30V, IC= -150mA,<br>IB1= -15mA<br>~~sd r:-~~<br>~~OO~~|
|DelayTime<br>~~sd~~<br>~~OO~~|td<br>~~sd~~<br>~~OO~~|⎯<br>~~sd~~<br>~~OO~~|10<br>~~sd~~<br>~~OO~~|ns<br>~~sd~~<br>~~OO~~||
|Rise Time<br>~~OO~~|tr<br>~~OO~~|⎯<br>~~OO~~|40<br>~~OO~~|ns<br>~~OO~~||
|Turn-Off Time<br>~~OO~~|toff<br>~~OO~~|⎯<br>~~OO~~|100<br>~~OO~~|ns<br>~~OO~~|VCC= -6.0V, IC= -150mA,<br>IB1= IB2= -15mA<br>~~OO~~|
|Storage Time|ts|⎯|80|ns||
|Fall Time|tf|⎯|30|ns||
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400350 TL LLL<br>300 TOC EEe<br>250 ENGR<br>Se<br>200<br>150 PIN ELLE<br>PTT<br>100 ENCEIN ELE<br>500 ELEN<br>0 25 50 75 100 125 150 175 200<br>TA, AMBIENT TEMPERATURE (°C)<br>Fig. 1, Max Power Dissipation vs.<br>Ambient Temperature<br>, POWER DISSIPATION (mW)<br>D<br>P<br>**----- End of picture text -----**<br>
DS31217 Rev. 4 - 2
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DMB2227A
© Diodes Incorporated
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**----- Start of picture text -----**<br>
a<br>Sil as |<br>— SINE] :<br>TINS Ill }<br>og L ™ ||| T EITTATTNT 02 i}HI<br>Seem oo \ 85: iy<br>oCATI ENT SSS | LA A anc<br>1 10 CN100 CT1,000 A NT I m nie ;<br>IC, COLLECTOR CURRENT (mA)<br>Fig . 2 Typical bc Surrent Gain vs . Colecior Curent (2222A) Fig . 3 Typical Collector Emitter Saturation Voltage<br>vs . Collector Current (2222A)<br>=<br>"Hea1 i A I "COSage- eoee pthL, “|<br>s akeTy [a][a] B one lllag“yf TILMeena|<br>= -55°C pp, 0.8 ay<br>re TTIIipilSitr y { i p a ll ae<br>tt rece eet er TUM<br>s arc Tem A Lani<br>CMe acresCETTE<br>0.2 0 . 2 egTa = 150°C a | |<br>ATil Ps Se eCHUMTI<br>0 . 1 1 10 A 100 1,000 JCC0.1 r 1 nc10 100 1,000<br>ria IC a , COLLECTOR CURRENT (mA) e Gollesior Current (22298) Fig. 5 e IC, COLLECTOR CURRENT (mA) e olector Curent (22528) Voltage<br>ea<br>lis gf<br>MINIT), —<br>Do<br>CTC, | g VCE = 20V e<br>f = 100MHz<br>UI E —<br>“Oo 1 LHI 10 Teall,100 = * °0 20 40TE60 80 100<br>VR, REVERSE VOLTAGE (V) lo, COLLECTOR CURRENT (mA)<br>Fig . 6 Typical Capacitance Characteristics (2222A) Fig. 7 Typical Gain-Bandwidth Product<br>vs. Collector Current (2222A)<br>, COLLECTOR EMITTER<br>SATURATION VOLTAGE (V)<br>CE(SAT)<br>V<br>, BASE EMITTER TURN-ON VOLTAGE (V) , BASE EMITTER SATURATION VOLTAGE (V)<br>BE(ON)<br>V<br>BE(SAT)<br>V<br>CAPACITANCE (pF)<br>**----- End of picture text -----**<br>
DS31217 Rev. 4 - 2
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DMB2227A
© Diodes Incorporated
**www.diodes.com**
**==> picture [490 x 649] intentionally omitted <==**
**----- Start of picture text -----**<br>
909 o a h INSE 0.4a |<br>CUI ATTN ee<br>CUT eT | \Su CUT<br>~ \ 0.2 Ty = 85°C<br>100 ATA LTT<br>C ot t CELINA<br>CCIE TIN, = N ee<br>0,001 0 . 01 0.1 1 0 . 1 1 10 100 1,000<br>-IC, COLLECTOR CURRENT (A) Fig. 9 Typical Collector-Emitter Saturation Voltage-IC, COLLECTOR CURRENT (mA)<br>Fig. 8 Typical DC Current Gain vs. Collector Current (2907A)<br>vs. Collector Current (2907A)<br>1.2 1.2<br>IC/IB = 10<br>1 1<br>TM = A<br>Te Le el<br>0.8 OT snags a 0.8 Asuna S EET T TTT a<br>ee at t Se t el<br>0.6 0 es sel 0.6 Ta e<br>ee e Me Tl<br>0.4 ee el 0.4 T aaaMS<br>a zc eT tT TT<br>0.2 tThaw ed iy 91 Il 0.2 ete CT ceceTTT TT<br>ae<br>0 CC C 0 A<br>0.1 1 10 100 1,000 = 0.1 A 1 A 10 100 1,000<br>-IC, COLLECTOR CURRENT (mA) -IC, COLLECTOR CURRENT (mA)<br>Fig. 10 Typical Base-Emitter Turn-On Voltage Fig. 11 Typical Base-Emitter Saturation Voltage<br>vs. Collector Current (2907A) vs. Collector Current (2907A)<br>35 500<br>450<br>30<br>E M 400 F k<br>e T UL =<br>25 350<br>oN ———<br>300<br>20<br>250<br>ST AS<br>15 a ON | 200 a<br>\ 150<br>10<br>CUITAN Tint 1 HT ee<br>100<br>a a +}<br>5<br>ho 50 pf<br>0 a 0 [| | tf<br>0.1 1 10 ai 100 0 | of 20 [ 40 | 60 tf 80 100<br>VR, REVERSE VOLTAGE (V) -IC, COLLECTOR CURRENT (mA)<br>Fig. 12 Typical Capacitance Characteristics (2907A) Fig. 13 Typical Gain-Bandwidth Product<br>vs. Collector Current (2907A)<br>, COLLECTOR-EMITTER<br>, DC CURRENT GAINFE CE(SAT) SATURATION VOLTAGE (V)<br>h -V<br>, BASE-EMITTER<br>BE(SAT)<br>-V<br>SATURATION VOLTAGE (V)<br>, BASE-EMITTER TURN-ON VOLTAGE (V)<br>BE(ON)<br>-V<br>CAPACITANCE (pF)<br>, GAIN BANDWIDTH PRODUCT (MHz)<br>fT<br>**----- End of picture text -----**<br>
DS31217 Rev. 4 - 2
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DMB2227A
© Diodes Incorporated
**www.diodes.com**
|
## **Ordering Information** (Note 5)
|**Ordering Informationg Information Information**(Note 5)|**Ordering Informationg Information Information**(Note 5)|**Ordering Informationg Information Information**(Note 5)|
|---|---|---|
|**Device**<br>**Packaging**<br>**Shipping**<br>DMB2227A-7<br>SOT-26<br>3000/Tape & Reel<br>Notes:<br>5.<br>For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.<br>**Marking Information **<br>D27<br>YM<br>D27 = Product Type Marking Code<br>YM = Date Code Marking<br>Y = Year ex: U = 2007<br>M = Month ex: 9 = September<br>Date CodeKey<br>**Year**<br>**2007**<br>**2008**<br>**2009**<br>**2010**<br>**2011**<br>**2012**<br>**Code**<br>U<br>V<br>W<br>X<br>Y<br>Z<br>**Month**<br>**Jan**<br>**Feb**<br>**Mar**<br>**Apr**<br>**May**<br>**Jun**<br>**Jul**<br>**Aug**<br>**Sep**<br>**Oct**<br>**Nov**<br>**Dec**<br>**Code**<br>1<br>2<br>3<br>4<br>5<br>6<br>7<br>8<br>9<br>O<br>N<br>D<br>IMPORTANT NOTICE<br>Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes<br>~~roo~~<br>~~ee ee~~<br>~~ee~~|||
||without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product||
||described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall||
||assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,||
||harmless against all damages.||
||LIFE SUPPORT||
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated.
DS31217 Rev. 4 - 2
6 of 6
DMB2227A
© Diodes Incorporated
**www.diodes.com**
Updated at March 26, 2026
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