# Standard Recovery Diode, 1.6 kV, 150 A, Single, 1.15 V, 3.24 kA

![Product image](https://novapart.co/image/farnell:4765079/)

**URL**: https://novapart.co/products/DMA150E1600NA/standard-recovery-diode-16-kv-150-a-single-115-v
**SKU**: DMA150E1600NA
**Manufacturer**: LITTELFUSE
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Standard Recovery Rectifier Diodes
**Price**: €25.9300
**Stock**: 10+
**Lead Time**: 120 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 4Pins |
| Product Range | - |
| Qualification | - |
| Diode Case Style | SOT-227B |
| Diode Configuration | Single |
| Forward Voltage Max | 1.15V |
| Forward Surge Current | 3.24kA |
| Reverse Recovery Time | - |
| Average Forward Current | 150A |
| Operating Temperature Max | 125°C |
| Repetitive Peak Reverse Voltage | 1.6kV |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:4765079/)

## **DMA150E1600NA** 

## **Standard Rectifier** 

**VRRM** _**=**_ **1600 V I FAV** _**=**_ **150 A VF** _**=**_ **1.05 V** 

## Single Diode 

## **Part number** 

## **DMA150E1600NA** 

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Backside: Isolated<br>**----- End of picture text -----**<br>


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## **Features / Advantages:** 

- Planar passivated chips 

- Very low leakage current 

- Very low forward voltage drop 

- Improved thermal behaviour 

## **Applications:** 

- Diode for main rectification 

- For single and three phase bridge configurations 

## **Package:** SOT-227B (minibloc) 

- Isolation Voltage:          V~3000 

- Industry standard outline 

- RoHS compliant 

- Epoxy meets UL 94V-0 

- Base plate: Copper internally DCB isolated 

- Advanced power cycling 

## **Disclaimer Notice** 

Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. 

IXYS reserves the right to change limits, conditions and dimensions. 

Data according to IEC 60747and per semiconductor unless otherwise specified 

20191129b 

© 2019 IXYS all rights reserved 

**DMA150E1600NA** 

|**Ratings**<br>**Rectifier**|**Ratings**<br>**Rectifier**|**Ratings**<br>**Rectifier**|**Ratings**<br>**Rectifier**|**Ratings**<br>**Rectifier**|**Ratings**<br>**Rectifier**|
|---|---|---|---|---|---|
|**Symbol**<br>**Definition**<br>**Conditions**||**min.**|**typ.**|**max.**|**Unit**|
|**VRSM**<br>_max. non-repetitive reverse blocking voltage_<br>T    =   25°C<br>VJ||||1700|V|
|**VRRM**<br>_max. repetitive reverse blocking voltage_<br>T    =   25°C<br>VJ||||1600|V|
|**IR**<br>_reverse current_|V    =          V<br>R<br>T    =   25°C<br>VJ<br>T    =       °C<br>VJ<br>V    =          V<br>R<br>1600<br>150<br>1600|||200<br>3.5|mA<br>µA|
|**VF**<br>_forward voltage drop_|T    =   25°C<br>VJ<br>I  =          A<br>F<br>150<br>I  =          A<br>F<br>300|||1.15<br>1.36|V<br>V|
||T    =       °C<br>VJ<br>I  =          A<br>F<br>150<br>I  =          A<br>F<br>300<br>125|||1.05<br>1.33|V<br>V|
|**I**<br>**FAV**<br>_average forward current_|T  =       °C<br>C<br>110<br>T    =       °C<br>VJ<br>150<br>d =<br>rectangular<br>0.5|||150|A|
|**VF0**<br>T    =       °C<br>VJ<br>150<br>**rF**<br>_threshold voltage_<br>_slope resistance_<br>_for power loss calculation only_||||0.78<br>1.8|V<br>mΩ|
|**R**<br>_thermal resistance junction to case_<br>**thJC**||||0.2|K/W|
|**R**<br>_thermal resistance case to heatsink_<br>**thCH**|||0.1||K/W|
|**Ptot**<br>_total power dissipation_|T    =   25°C<br>C|||620|W|
|**IFSM**<br>_max. forward surge current_|t =  10 ms; (50 Hz), sine<br>T    =   45°C<br>VJ<br>V    = 0 V<br>R<br>t = 8,3 ms; (60 Hz), sine|||3.00<br>3.24|kA<br>kA|
||T    =       °C<br>VJ<br>150<br>V    = 0 V<br>R<br>t =  10 ms; (50 Hz), sine<br>t = 8,3 ms; (60 Hz), sine|||2.55<br>2.76|kA<br>kA|
|**I²t**<br>_value for fusing_|T    =   45°C<br>V    = 0 V<br>t =  10 ms; (50 Hz), sine<br>t = 8,3 ms; (60 Hz), sine<br>VJ<br>R|||45.0<br>43.7|kA²s<br>kA²s|
||T    =       °C<br>150<br>V    = 0 V<br>t =  10 ms; (50 Hz), sine<br>t = 8,3 ms; (60 Hz), sine<br>VJ<br>R|||32.5<br>31.6|kA²s<br>kA²s|
|**CJ**<br>_junction capacitance_|V  =          V;<br>400<br>T    =   25°C<br>f = 1 MHz<br>R<br>VJ||60||pF|



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IXYS reserves the right to change limits, conditions and dimensions. 

Data according to IEC 60747and per semiconductor unless otherwise specified 

20191129b 

© 2019 IXYS all rights reserved 

## **DMA150E1600NA** 

|**Ratings**<br>**Package**<br>**SOT-227B (minibloc)**|**Ratings**<br>**Package**<br>**SOT-227B (minibloc)**|**Ratings**<br>**Package**<br>**SOT-227B (minibloc)**|**Ratings**<br>**Package**<br>**SOT-227B (minibloc)**|**Ratings**<br>**Package**<br>**SOT-227B (minibloc)**|**Ratings**<br>**Package**<br>**SOT-227B (minibloc)**|**Ratings**<br>**Package**<br>**SOT-227B (minibloc)**|
|---|---|---|---|---|---|---|
|**Symbol**<br>**Definition**<br>**Conditions**|||**min.**|**typ.**|**max.**|**Unit**|
|**I RMS**<br>_RMS current_<br>per terminal<br>**_1)_**|||||150|A|
|**TVJ**<br>_virtual junction temperature_|||-40||150|°C|
|**Top**<br>_operation temperature_|||-40||125|°C|
|**Tstg**<br>_storage temperature_|||-40||150|°C|
|**Weight**||||30||g|
|**M D**<br>_mounting torque_<br>**M T**<br>_terminal torque_|||1.1||1.5|Nm<br>Nm|
||||1.1||1.5||
|**dSpp/App**<br>_creepage distance on surface | striking distance through air_<br>**dSpb/Apb**<br>_terminal to backside_<br>_terminal to terminal_||10.5<br>8.6|3.2<br>6.8|||mm<br>mm|
|**V**<br>t = 1 second<br>t = 1 minute<br>_isolation voltage_<br>50/60 Hz, RMS; I≤1 mA<br>ISOL<br>**ISOL**|||3000|||V<br>V|
||||2500||||
|1)IRMSis typically limited by the pin-to-chip resistance (1); or by the current capability of the chip (2).  In case of (1) and a product<br>with multiple pins for one chip-potential, the current capability can be increased by connecting the pins as one contact.|||||||



1) IRMS is typically limited by the pin-to-chip resistance (1); or by the current capability of the chip (2).  In case of (1) and a product with multiple pins for one chip-potential, the current capability can be increased by connecting the pins as one contact. 

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Product Marking<br>Part<br>Number<br>Logo XXXXX ®<br>UL<br>Date � yywwZ 1234<br>Code<br>Location Lot#<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Part description<br>D = Diode<br>M = Standard Rectifier<br>A = (up to 1800V)<br>150 = Current Rating [A]<br>E = Single Diode<br>1600 = Reverse Voltage [V]<br>NA = SOT-227B (minibloc)<br>**----- End of picture text -----**<br>


|**Ordering**|**Ordering Number**|**Marking on Product**|**Delivery Mode**|**Quantity**|**Code No.**|
|---|---|---|---|---|---|
|Standard|DMA150E1600NA|DMA150E1600NA|Tube|10|508942|



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**----- Start of picture text -----**<br>
 Equivalent Circuits for Simulation * on die level T    =VJ 150°C<br>I V0 R 0 Rectifier<br>V 0 max threshold voltage 0.78 V<br>R0 max slope resistance * 1 mΩ<br>**----- End of picture text -----**<br>


IXYS reserves the right to change limits, conditions and dimensions. 

Data according to IEC 60747and per semiconductor unless otherwise specified 

20191129b 

© 2019 IXYS all rights reserved 

**DMA150E1600NA** 

## **Outlines SOT-227B (minibloc)** 

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2 1<br>3 4<br>**----- End of picture text -----**<br>


IXYS reserves the right to change limits, conditions and dimensions. 

Data according to IEC 60747and per semiconductor unless otherwise specified 

20191129b 

© 2019 IXYS all rights reserved 

**DMA150E1600NA** 

## **Rectifier** 

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**----- Start of picture text -----**<br>
300 2500 10 [5]<br>50 Hz, 80%VRRM V R  = 0 V<br>250 2250<br>200 2000<br>IF150 TTTVJVJVJ =   25°C = 150°C = 125°C IFSM1750 TVJ = 45°C I [2] t<br>[A] [A] [A [2] s] TVJ = 45°C<br>100 1500<br>TVJ = 150°C<br>50 1250 TVJ = 150°C<br>0 1000 10 [4]<br>0.5 1.0 1.5 0.001 0.01 0.1 1 1 2 3 4 5 6 7 8 910<br>VF [V] t [s] t [ms]<br>Fig. 1 Forward current versus Fig. 2 Surge overload current Fig. 3 I [2] t versus time per diode<br>voltage drop per diode<br>200 350<br>RthHA =<br>0.2 K/W 300 DC =<br>160 DC = 0.4 K/W 1<br>1 0.6 K/W 0.5<br>0.5 0.8 K/W 250 0.4<br>0.4 1.0 K/W 0.33<br>P120tot 0.33 0.17 2.0 K/W 200 0.170.08<br>0.08 IF(AV)M<br>[W]80 150<br>[A]<br>100<br>40<br>50<br>0 0<br>0 20 40 60 80 100 120 140 160 0 25 50 75 100 125 150 175 0 25 50 75 100 125 150 175<br>IF(AV)M [A] Tamb [[°C]] TC [°C]<br>Fig. 4 Power dissipation versus direct output current and ambient temperature Fig. 5 Max. forward current versus<br>case temperature<br>**----- End of picture text -----**<br>


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0.20<br>0.16 Constants for ZthJC calculation:<br>ZthJC i Rthi (K/W) ti (s)<br>0.12<br>1 0.017 0.01<br>[K/W ]<br>2 0.013 0.00001<br>0.08<br>3 0.010 0.01<br>4 0.04 0.04<br>0.04<br>5  0.12 0.3<br>0.00<br>1 10 100 1000 10000<br>t [ms]<br>Fig. 6 Transient thermal impedance junction to case<br>**----- End of picture text -----**<br>


IXYS reserves the right to change limits, conditions and dimensions. 

Data according to IEC 60747and per semiconductor unless otherwise specified 

20191129b 

© 2019 IXYS all rights reserved 



## Links

- [View this product on Novapart](https://novapart.co/products/DMA150E1600NA/standard-recovery-diode-16-kv-150-a-single-115-v)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/littelfuse/dma150e1600na/rectifier-1-6kv-150a-sot-227b/dp/4765079)
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