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DMA10P1600HR
Standard Recovery Diode, 1.6 kV, 10 A, Dual Series, 1.23 V, 120 A
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Standard Recovery Rectifier Diodes
- Available until stocks are exhausted
- SVHC: No SVHC (12-Jan-2017)
- No. of Pins: 3Pins
- Product Range: -
- Qualification: -
- Diode Case Style: ISO247
- Diode Configuration: Dual Series
- Forward Voltage Max: 1.23V
- Forward Surge Current: 120A
- Reverse Recovery Time: -
- Average Forward Current: 10A
- Operating Temperature Max: 150°C
- Repetitive Peak Reverse Voltage: 1.6kV
| Delivery and price | |
|---|---|
| Units per pack | 10 |
| Price | 6.86 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **DMA10P1600HR** ## **Standard Rectifier** **VRRM** _**=**_ **2x 1600 V I FAV** _**=**_ **10 A VF** _**=**_ **1.18 V** ## Phase leg ## **Part number** ## **DMA10P1600HR** ## Backside: isolated **==> picture [129 x 11] intentionally omitted <==** **----- Start of picture text -----**<br> 1 2 3<br>**----- End of picture text -----**<br> ## **Features / Advantages:** ## **Applications:** - Diode for main rectification - Planar passivated chips - Very low leakage current ● For single and three phase ● Very low forward voltage drop bridge configurations - Improved thermal behaviour ## **Package:** ISO247 - Isolation Voltage: V~3600 ● Industry standard outline - RoHS compliant - Epoxy meets UL 94V-0 - Soldering pins for PCB mounting - Backside: DCB ceramic - Reduced weight - Advanced power cycling ## **Disclaimer Notice** Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20191128c © 2019 IXYS all rights reserved **DMA10P1600HR** |**Ratings**<br>**Rectifier**|**Ratings**<br>**Rectifier**|**Ratings**<br>**Rectifier**|**Ratings**<br>**Rectifier**|**Ratings**<br>**Rectifier**|**Ratings**<br>**Rectifier**| |---|---|---|---|---|---| |**Symbol**<br>**Definition**<br>**Conditions**||**min.**|**typ.**|**max.**|**Unit**| |**VRSM**<br>_max. non-repetitive reverse blocking voltage_<br>T = 25°C<br>VJ||||1700|V| |**VRRM**<br>_max. repetitive reverse blocking voltage_<br>T = 25°C<br>VJ||||1600|V| |**IR**<br>_reverse current_|V = V<br>R<br>T = 25°C<br>VJ<br>T = °C<br>VJ<br>V = V<br>R<br>1600<br>150<br>1600|||10<br>0.2|mA<br>µA| |**VF**<br>_forward voltage drop_|T = 25°C<br>VJ<br>I = A<br>F<br>10<br>I = A<br>F<br>20|||1.23<br>1.46|V<br>V| ||T = °C<br>VJ<br>I = A<br>F<br>10<br>I = A<br>F<br>20<br>150|||1.18<br>1.49|V<br>V| |**I**<br>**FAV**<br>_average forward current_|T = °C<br>C<br>145<br>T = °C<br>VJ<br>175<br>rectangular|||10|A| |**VF0**<br>T = °C<br>VJ<br>175<br>**rF**<br>_threshold voltage_<br>_slope resistance_<br>_for power loss calculation only_||||0.81<br>34|V<br>mΩ| |**R**<br>_thermal resistance junction to case_<br>**thJC**||||2|K/W| |**R**<br>_thermal resistance case to heatsink_<br>**thCH**|||0.3||K/W| |**Ptot**<br>_total power dissipation_|T = 25°C<br>C|||75|W| |**IFSM**<br>_max. forward surge current_|t = 10 ms; (50 Hz), sine<br>T = 45°C<br>VJ<br>V = 0 V<br>R<br>t = 8,3 ms; (60 Hz), sine|||120<br>130|A<br>A| ||T = °C<br>VJ<br>150<br>V = 0 V<br>R<br>t = 10 ms; (50 Hz), sine<br>t = 8,3 ms; (60 Hz), sine|||100<br>110|A<br>A| |**I²t**<br>_value for fusing_|T = 45°C<br>V = 0 V<br>t = 10 ms; (50 Hz), sine<br>t = 8,3 ms; (60 Hz), sine<br>VJ<br>R|||72<br>70|A²s<br>A²s| ||T = °C<br>150<br>V = 0 V<br>t = 10 ms; (50 Hz), sine<br>t = 8,3 ms; (60 Hz), sine<br>VJ<br>R|||50<br>50|A²s<br>A²s| |**CJ**<br>_junction capacitance_|V = V;<br>400<br>T = 25°C<br>f = 1 MHz<br>R<br>VJ||4||pF| **==> picture [307 x 253] intentionally omitted <==** IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20191128c © 2019 IXYS all rights reserved **DMA10P1600HR** |**Ratings**<br>**Package**<br>**ISO247**|**Ratings**<br>**Package**<br>**ISO247**|**Ratings**<br>**Package**<br>**ISO247**|**Ratings**<br>**Package**<br>**ISO247**|**Ratings**<br>**Package**<br>**ISO247**| |---|---|---|---|---| |**Symbol**<br>**Definition**<br>**Conditions**|**min.**|**typ.**|**max.**|**Unit**| |**I RMS**<br>_RMS current_<br>per terminal|||70|A| |**TVJ**<br>_virtual junction temperature_|-55||175|°C| |**Top**<br>_operation temperature_|-55||150|°C| |**Tstg**<br>_storage temperature_|-55||150|°C| |**Weight**||6||g| |**M D**<br>_mounting torque_<br>**FC**<br>_mounting force with clip_|0.8<br>20||1.2<br>120|Nm<br>N| |**dSpp/App**<br>_creepage distance on surface | striking distance through air_<br>**dSpb/Apb**<br>_terminal to backside_<br>_terminal to terminal_|2.7|||mm<br>mm| ||4.1|||| |**V**<br>t = 1 second<br>t = 1 minute<br>_isolation voltage_<br>50/60 Hz, RMS; I≤1 mA<br>ISOL<br>**ISOL**|3600||V<br>V|| ||3000|||| **==> picture [476 x 143] intentionally omitted <==** **----- Start of picture text -----**<br> Product Marking Part description<br>D = Diode<br>M = Standard Rectifier<br>A = (up to 1800V)<br>10 = Current Rating [A]<br>P = Phase leg<br>1600 = Reverse Voltage [V]<br>Logo IXYS HR = ISO247 (3)<br>Part Number XXXXXXXXX<br>Date Code yywwZ<br>Lot# 123456<br>Location<br>**----- End of picture text -----**<br> |**Ordering**||**Ordering Number**|**Marking on Product**|**Marking on Product**|**Delivery Mode**|**Quantity**|**Code No.**| |---|---|---|---|---|---|---|---| |Standard||DMA10P1600HR|DMA10P1600HR||Tube|30|522535| ||||||||| |||**Similar Part**|**Package**|**Voltage class**|||| |||DMA10P1200HR|ISO247(3)|1200|||| **==> picture [341 x 67] intentionally omitted <==** **----- Start of picture text -----**<br> Equivalent Circuits for Simulation * on die level T =VJ 175°C<br>I V0 R 0 Rectifier<br>V 0 max threshold voltage 0.81 V<br>R0 max slope resistance * 31 mΩ<br>**----- End of picture text -----**<br> IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20191128c © 2019 IXYS all rights reserved **DMA10P1600HR** **==> picture [509 x 15] intentionally omitted <==** **----- Start of picture text -----**<br> Outlines ISO247<br>**----- End of picture text -----**<br> **==> picture [510 x 483] intentionally omitted <==** **----- Start of picture text -----**<br> A A2 2x 2x D3<br>E Ø P<br>A3 E3<br>Q S Dim. Millimeter Inches<br>min max min max<br>A 4.70 5.30 0.185 0.209<br>A1 2.21 2.59 0.087 0.102<br>D A2 1.50 2.49 0.059 0.098<br>A3 typ. 0.05 typ. 0.002<br>2x E2 D1 b 0.99 1.40 0.039 0.055<br>4 b2 1.65 2.39 0.065 0.094<br>b4 2.59 3.43 0.102 0.135<br>1 2 3 D2 c 0.38 0.89 0.015 0.035<br>D 20.79 21.45 0.819 0.844<br>D1 typ. 8.90 typ. 0.350<br>L1 D2 typ. 2.90 typ. 0.114<br>E1 D3 typ. 1.00 typ. 0.039<br>E 15.49 16.24 0.610 0.639<br>L E1 typ. 13.45 typ. 0.530<br>E2 4.31 5.48 0.170 0.216<br>E3 typ. 4.00 typ. 0.157<br>e 5.46 BSC 0.215 BSC<br>2x b2 L 19.80 20.30 0.780 0.799<br>C L1 - 4.49 - 0.177<br>3x b<br>Ø P 3.55 3.65 0.140 0.144<br>b4 A1<br>Q 5.38 6.19 0.212 0.244<br>S 6.14 BSC 0.242 BSC<br>2x e<br>**----- End of picture text -----**<br> **==> picture [509 x 168] intentionally omitted <==** **----- Start of picture text -----**<br> 1 2 3<br>**----- End of picture text -----**<br> IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20191128c © 2019 IXYS all rights reserved **DMA10P1600HR** ## **Rectifier** **==> picture [508 x 660] intentionally omitted <==** **----- Start of picture text -----**<br> 20 100 10 [2]<br>50 Hz, 80%VRRM V R = 0 V<br>15<br>80 T VJ = 45°C TVJ = 45°C<br>IF IFSM I [2] t<br>10<br>[A] [A]<br>[A [2] s]<br>60 TVJ = 150°C<br>5<br>TVJ = 25°C TVJ = 150°C<br>T VJ = 125°C<br>TVJ = 150°C<br>0 40 10 [1]<br>0.5 1.0 1.5 2.0 0.001 0.01 0.1 1 1 2 3 4 5 6 7 8 910<br>VF [V] t [s] t [ms]<br>Fig. 1 Forward current versus Fig. 2 Surge overload current Fig. 3 I [2] t versus time per diode<br>voltage drop per diode<br>18 28<br>16 R4 K/WthHA = 24 DC =<br>DC = 8 K/W 1<br>14 1 10 K/W 0.5<br>0.5 12 K/W 20 0.4<br>12 0.4 16 K/W I 0.33<br>Ptot 0.33 20 K/W F(AV)M 0.17<br>10 0.17 16 0.08<br>0.08 [A]<br>[W] 8 12<br>6<br>8<br>4<br>4<br>2<br>0 0<br>0 2 4 6 8 10 12 0 50 100 150 200 0 50 100 150 200<br>IF(AV)M [A] Tamb [°C] TC [°C]<br>Fig. 4 Power dissipation vs. direct output current and ambient temperature Fig. 5 Max. forward current vs.<br>case temperature<br>2.4<br>2.0<br>1.6 Constants for ZthJC calculation:<br>ZthJC i Rthi (K/W) ti (s)<br>1.2<br>1 0.06 0.0004<br>[K/W]<br>2 0.23 0.0020<br>0.8<br>3 0.40 0.0040<br>4 0.71 0.0240<br>0.4<br>5 0.60 0.1500<br>0.0<br>1 10 100 1000 10000<br>t [ms]<br>Fig. 6 Transient thermal impedance junction to case<br>**----- End of picture text -----**<br> IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20191128c © 2019 IXYS all rights reserved
Updated at April 22, 2026
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