# Bipolar (BJT) Single Transistor, NPN, 40 V, 500 mA, 1.2 W, SOT-223, Surface Mount

![Product image](https://novapart.co/image/farnell:1710672/)

**URL**: https://novapart.co/products/DJT4031N-13/bipolar-bjt-single-transistor-npn-40-v-500-ma-12-w
**SKU**: DJT4031N-13
**Manufacturer**: DIODES INC.
**Price**: €0.1030
**Stock**: 10+
**Lead Time**: 190 days (indicative)

## Description

Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency ft:105MHz; Power Dissipation Pd:1.2W; DC Collector Current:500mA; DC Current Gain hFE:220hFE; Transistor

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 1.2W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | NPN |
| Transition Frequency | 105MHz |
| Transistor Case Style | SOT-223 |
| Dc Current Gain Hfe Min | 220hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 500mA |
| Collector Emitter Voltage Max | 40V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1710672/)

**DJT4031N** Green | **LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR** Please click here to visit our online spice models database. Please click here to visit our online spice models database. 

## **Features** 

- Ideally Suited for Automated Assembly Processes 

- Complementary PNP Type Available (DJT4030P) 

- Low Collector-Emitter Saturation Voltage 

- Ideal for Medium Power Switching or Amplification Applications 

- **Lead Free By Design/RoHS Compliant (Note 1)** 

- **"Green" Device (Note 2)** 

## **Mechanical Data** 

- Case: SOT-223 

- Case Material: Molded Plastic, "Green” Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020D 

- Terminals: Finish — Matte Tin annealed over Copper leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 

- Marking Information: See Page 4 

- Ordering Information: See Page 4 

- Weight: 0.115 grams (approximate) 

**==> picture [245 x 87] intentionally omitted <==**

**----- Start of picture text -----**<br>
2,4<br>1<br>3<br>Top View Device Schematic Pin Out Configuration<br>EMITTER<br>COLLECTOR<br>BASE<br>3 E<br>C 4 2 C<br>1 B<br>**----- End of picture text -----**<br>


## **Maximum Ratings** @TA = 25°C unless otherwise specified 

|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|
|---|---|---|---|
|||||
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Collector-Base Voltage|VCBO|40|V|
|Collector-Emitter Voltage|VCEO|40|V|
|Emitter-Base Voltage|VEBO|6|V|
|Peak Pulse Current|ICM|5|A|
|Continuous Collector Current|IC|3|A|
|Base Current|IB|1|A|



## **Thermal Characteristics** 

|**Thermal Characteristics**||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Power Dissipation(Note 3) @TA= 25°C|PD|1.2|W|
|Thermal Resistance,Junction to Ambient Air(Note 3) @TA= 25°C|RθJA|104|°C/W|
|Power Dissipation(Note 4) @TA= 25°C|PD|2|W|
|Thermal Resistance,Junction to Ambient Air(Note 4) @TA= 25°C|RθJA|62.5|°C/W|
|Operatingand Storage Temperature Range|TJ,TSTG|-55 to +150|°C|



- Notes: 1. No purposefully added lead. 

   2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 

3. Device mounted on FR-4 PCB with minimum recommended pad layout. 

4. Device mounted on FR-4 PCB with 1 inch[2] copper pad layout. 

1 of 5 **www.diodes.com** 

DJT4031N Document number: DS31603 Rev. 2 - 2 

March 2009 © Diodes Incorporated 

**DJT4031N** 

**Electrical Characteristics** @TA = 25°C unless otherwise specified 

|~~CT]~~|~~CT]~~|~~CT]~~|~~CT]~~|~~CT]~~|~~CT]~~|~~CT]~~|
|---|---|---|---|---|---|---|
|**Characteristic**<br>~~CT]~~|**Symbol **<br>~~CT]~~|**Min**<br>~~CT]~~|**Typ**<br>~~CT]~~|**Max **<br>~~CT]~~|**Unit**<br>~~CT]~~|**Test Conditions**<br>~~CT]~~|
|**OFF CHARACTERISTICS(Note 4)**<br>~~I ODQO~~|||||||
|Collector-Base Breakdown Voltage<br>~~GO~~|V(BR)CBO<br>~~GO~~|40<br>~~GO~~<br>~~I OD~~|⎯<br>~~GO~~<br>~~OD~~|⎯<br>~~GO~~<br>~~QO~~|V<br>~~GO~~|IC= 100μA<br>~~GO~~|
|Collector-Emitter Breakdown Voltage<br>~~rr~~<br>~~PE~~|V(BR)CEO<br>~~rr~~<br>~~PE~~|40<br>~~I OD~~<br>~~rr~~<br>~~PESS~~|⎯<br>~~OD~~<br>~~rr~~<br>~~SS~~|⎯<br>~~QO~~<br>~~rr~~<br>~~SS~~|V<br>~~rr~~<br>~~SS~~|IC= 10mA<br>~~rr~~<br>~~SS~~|
|Emitter-Base Breakdown Voltage<br>~~rr~~<br>~~PE~~|V(BR)EBO<br>~~rr~~<br>~~PE~~|6<br>~~rr~~<br>~~PESS~~|⎯<br>~~rr~~<br>~~SS~~|⎯<br>~~rr~~<br>~~SS~~|V<br>~~rr~~<br>~~SS~~|IE= 50μA<br>~~rr~~<br>~~SS~~|
|Collector-Base Cutoff Current<br>~~PE~~|ICBO<br>~~PE~~|⎯<br>~~PESS~~|⎯<br>~~SS~~|100<br>~~SS~~|nA <br>~~SS~~|VCB= 40V,IE= 0<br>~~SS~~|
|||⎯<br>~~PESS~~|⎯<br>~~SS~~<br>~~GO~~|50<br>~~SS~~<br>~~GO~~|μA<br>~~SS~~|VCB= 40V,IE= 0,TA= 150°C<br>~~SS~~|
|Emitter-Base Cutoff Current<br>~~PE~~<br>~~GD~~|IEBO<br>~~PE~~<br>~~GD~~|⎯<br>~~PESS~~<br>~~GD~~|⎯<br>~~SS~~<br>~~GD~~<br>~~GO~~|100<br>~~SS~~<br>~~GD~~<br>~~GO~~|nA<br>~~SS~~<br>~~GD~~|VEB= 6V,IC= 0<br>~~SS~~<br>~~GD~~|
|**ON CHARACTERISTICS (Note 4)**<br>~~GO~~<br>~~GO~~|||||||
|DC Current Gain<br>~~i~~|hFE<br>~~i~~|220<br>~~i~~|⎯<br>~~i~~|⎯<br>~~i~~|⎯<br>~~i~~<br>~~PF~~|VCE= 1V,IC= 0.5A<br>~~i~~|
|||200<br>~~i~~<br>~~ee~~|⎯<br>~~i~~<br>~~ee~~|500<br>~~i~~||VCE= 1V,IC= 1A<br>~~i~~<br>~~PF~~|
|||100<br>~~i~~<br>~~ee~~|⎯<br>~~i~~<br>~~ee~~|⎯<br>~~i~~||VCE= 1V,IC= 3A<br>~~i~~<br>~~PF~~|
|Collector-Emitter Saturation Voltage<br>~~a~~|VCE(SAT)<br>~~a~~|⎯<br>~~ee ~~<br>~~a~~|⎯<br> ~~ee~~<br>~~a~~|100<br>~~a~~|mV<br>~~PF~~<br>~~a~~|IC= 0.5A,IB= 5mA<br>~~PF~~<br>~~a~~|
|||⎯<br>~~a~~|⎯<br>~~a~~|150<br>~~a~~||IC= 1A,IB= 10mA<br>~~a~~|
|||⎯<br>~~a~~|⎯<br>~~a~~|300<br>~~a~~||IC= 3A,IB= 0.3A<br>~~a~~|
|Equivalent On-Resistance|RCE(SAT)|⎯|⎯|100|mΩ|IE= 3A,IB= 0.3A|
|Base-Emitter Saturation Voltage<br>~~oh~~|VBE(SAT)<br>~~oh~~|⎯<br>~~oh~~|⎯<br>~~oh~~|1.0<br>~~oh~~|V<br>~~oh~~|IC= 1A,IB= 0.1A<br>~~oh~~|
|Base-Emitter Turn-on Voltage<br>~~oh~~<br>~~To~~|VBE(ON)<br>~~oh~~<br>|⎯<br>~~oh~~<br>|⎯<br>~~oh~~<br>|1.0<br>~~oh~~<br>|V<br>~~oh~~<br>|VCE= 2V,IC= 1A<br>~~oh~~<br>|
|**SMALLSIGNALCHARACTERISTICS**<br>~~|~~<br>~~To~~|||||||
|Transition Frequency<br>~~To~~<br>~~Co~~|fT<br><br>~~ee~~|⎯<br><br>~~ee~~|105<br><br>~~ee~~|⎯<br>|MHz<br>|VCE= 10V, IC= 100mA,<br>f = 100MHz<br>|
|Output Capacitance<br>~~Toee~~<br>~~Co~~|Cobo<br>~~ee~~<br>~~ee~~|⎯<br>~~ee~~<br>~~ee~~|27<br>~~ee~~<br>~~ee~~|⎯<br>~~ee~~|pF<br>~~ee~~|VCB= 10V,f = 1MHz<br>~~ee~~|
|Input Capacitance<br>~~ee~~<br>~~Co~~|CIbo<br>~~ee~~<br>~~ee~~|⎯<br>~~ee~~<br>~~ee~~|180<br>~~ee~~<br>~~ee~~|⎯<br>~~ee~~|pF<br>~~ee~~|VCB= 5V,f = 1MHz<br>~~ee~~|
|**SWITCHING CHARACTERISTICS**<br>~~eeeeee~~<br>~~Co~~|||||||
|Turn-On Time<br>~~Co~~<br>~~GD~~|ton<br>~~ee ~~<br>~~GD~~|⎯<br> ~~ee ~~<br>~~GD~~|45<br> ~~ee~~<br>~~GD~~<br>~~GO~~|⎯<br>~~GD~~<br>~~GO~~|ns<br>~~GD~~|VCC= 10V, IC= 2A,<br>IB1= 200mA|
|DelayTime<br>~~GD~~|td<br>~~GD~~|⎯<br>~~GD~~|14<br>~~GD~~<br>~~GO~~|⎯<br>~~GD~~<br>~~GO~~|ns<br>~~GD~~||
|Rise Time|tr<br>~~ee~~|⎯<br>~~ee~~|31<br>~~GO~~<br>~~ee~~|⎯<br>~~GO~~<br>~~ee~~|ns<br>~~ee~~||
|Turn-Off Time<br>~~es~~|toff<br>~~es~~<br>~~ee~~|⎯<br>~~es~~<br>~~ee~~|276<br>~~es~~<br>~~ee~~|⎯<br>~~es~~<br>~~ee~~|ns<br>~~es~~<br>~~ee~~|VCC= 10V, IC= 2A,<br>IB1= IB2= 200mA<br>~~es~~|
|Storage Time<br>~~es~~|ts<br>~~es~~<br>~~ee~~|⎯<br>~~es~~<br>~~ee~~|244<br>~~es~~<br>~~ee~~|⎯<br>~~es~~<br>~~ee~~|ns<br>~~es~~<br>~~ee~~||
|Fall Time<br>~~es~~|tf<br>~~es~~<br>~~ee~~|⎯<br>~~es~~<br>~~ee~~|32<br>~~es~~<br>~~ee~~|⎯<br>~~es~~<br>~~ee~~|ns<br>~~es~~<br>~~ee~~||



**==> picture [210 x 207] intentionally omitted <==**

**----- Start of picture text -----**<br>
2.0 PF KL f t f<br>1.6 NaeP| KE |]eee|<br>1.2 (Note 4)<br>w\oN _A | |<br>0.8 P|KEN|<br>(Note 3)<br>0.4 |NA| Ff |NXENA<br>0 | | [| | | IN<br>0 25 50 75 100 125 150<br>TA, AMBIENT TEMPERATURE (°C)<br>Fig. 1 Power Dissipation vs. Ambient Temperature<br>, POWER DISSIPATION (W)<br>D<br>P<br>**----- End of picture text -----**<br>


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10<br>Pw = 1ms<br>1<br>DC Pw = 100ms<br>Pw = 10ms<br>0.10<br>0.01<br>0.1 1 10 100<br>VCE, COLLECTOR-EMITTER VOLTAGE (V)<br>Fig. 2 Typical Collector Current<br>vs. Collector-Emitter Voltage (Note 3)<br>, COLLECTOR CURRENT (A)<br>IC<br>**----- End of picture text -----**<br>


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DJT4031N Document number: DS31603 Rev. 2 - 2 

March 2009 © Diodes Incorporated 

**DJT4031N** 

**==> picture [543 x 683] intentionally omitted <==**

**----- Start of picture text -----**<br>
600 1<br>VCE = 1V I C /I B  = 10<br>500<br>TA = 150°C<br>400 0.1<br>TA = 85°C TA = 150°C<br>300 T A  = 85°C<br>TA = 25°C<br>200 0.01 TA = 25°C<br>TA = -55°C<br>TA = -55°C<br>100<br>0 0.001<br>1 10 100 1,000 10,000 1 10 100 1,000 10,000<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Fig. 3 Typical DC Current Gain vs. Collector Current Fig. 4 Typical Collector-Emitter Saturation Voltage<br>vs. Collector Current<br>1.2 1.2<br>VCE = 1V<br>1.0 1.0 IC/IB = 10<br>fa cats<br>0.8 0.8<br>TA = -55°C TA = -55°C<br>0.6 0.6<br>TA = 25°C TA = 25°C<br>0.4 0.4<br>TA = 85°C<br>T A  = 85°C<br>0.2 seemed 0.2 T A  = 150°C<br>TA = 150°C<br>0 0<br>0.1 1 10 100 1,000 0.1 1 10 100 1,000 10,000<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Fig. 5 Typical Base-Emitter Turn-On Voltage  Fig. 6 Typical Base-Emitter Saturation Voltage<br>vs. Collector Current vs. Collector Current<br>1,000<br>f = 1MHz<br>Cibo<br>100<br>Cobo<br>SaSi<br>10<br>0.1 1 10 100<br>VR, REVERSE VOLTAGE (V)<br>Fig. 7 Typical Capacitance Characteristics<br>VOLTAGE (V)<br>, DC CURRENT GAIN  , COLLECTOR-EMITTER<br>FE<br>h<br>SATURATION<br>CE(SAT)<br>V<br>NEW PRODUCT<br>, BASE-EMITTER TURN-ON VOLTAGE (V) , BASE-EMITTER SATURATION VOLTAGE (V)<br>BE(ON)<br>V<br>BE(SAT)<br>V<br>CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


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DJT4031N Document number: DS31603 Rev. 2 - 2 

March 2009 © Diodes Incorporated 

**DJT4031N** 

**==> picture [403 x 214] intentionally omitted <==**

**----- Start of picture text -----**<br>
1<br>D = 0.7<br>D = 0.5<br>—S ar<br>D = 0.3<br>ue<br>0.1<br>D = 0.1<br>D = 0.05 D = 0.9 RθJA(t) = r(t) * RθJA<br>RθJA = 101°C/W<br>D = 0.02<br>P(pk)<br>0.01 t1<br>D = 0.01<br>t2<br>D = 0.005 TJ - TA = P * RθJA(t)<br>Duty Cycle, D = t 1 /t 2<br>D = Single Pulse<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 10,000<br>t1, PULSE DURATION TIME (s)<br>Fig. 8 Transient Thermal Response (Note 3)<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 5) 

|**Ordering Informationg Information Information** (Note 5)|||
|---|---|---|
|**Part Number**|**Case**|**Packaging**|
|DJT4031N-13|SOT-223|2500/Tape &Reel|



Notes: 5.  For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. 

## **Marking Information** 

ZNS34 = Product Type Marking Code YWW = Date Code Marking **ZNS34** Y = Last digit of year (ex: 8 = 2008) WW = Week code 01 - 52 **YWW** 

**==> picture [402 x 220] intentionally omitted <==**

**----- Start of picture text -----**<br>
Package Outline Dimensions<br>EE ———<br>SOT-223<br>+ Va —_—_ Dim  Min  Max  Typ<br>A 1.55 1.65 1.60<br>A1 0.010 0.15 : 0.05<br>1 EEE b1 2.90 3.10 3.00<br>b2 0.60  0.80  0.70<br>C 0.20  0.30  0.25<br>D 6.45 6.55 6.50<br>EE1 === E 3.45 3.55 3.50<br>e1 b2 E1 6.90 7.10 7.00<br>e | : —_ e [i—] —  —  : [i] 4.60<br>e1 —  —  2.30<br>L 0.85  1.05  0.95<br>A<br>>\l e7° et —_ Q [—] 0.84  = [——] 0.94  [—] — 0.89<br>: ee All Dimensions in mm<br>A1<br>**----- End of picture text -----**<br>


4 of 5 **www.diodes.com** 

DJT4031N Document number: DS31603 Rev. 2 - 2 

March 2009 © Diodes Incorporated 

**DJT4031N** 

## **Suggested Pad Layout** 

|X2<br>C1<br>~~C2~~<br>~~X1~~<br>Y2<br>Y1~~th1~~<br>~~8 BH~~<br>~~he~~e<br>~~A~~|**Dimensions**<br>**X1**<br>**X2**<br>**Y1**<br>**Y2**<br>**C1 **<br>**C2 **|**Value (in mm)**<br>3.3<br>1.2<br>1.6<br>1.6<br>6.4<br>2.3|
|---|---|---|



## IMPORTANT NOTICE 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. 

LIFE SUPPORT 

Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. 

5 of 5 **www.diodes.com** 

DJT4031N Document number: DS31603 Rev. 2 - 2 

March 2009 © Diodes Incorporated 



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- [Supplier page](https://es.farnell.com/diodes-inc/djt4031n-13/transistor-npn-sot223-1-2w/dp/1710672)
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