DF3A6.8FUT1G

## DF3A6.8FUT1 

## **Preferred Device** 

## Zener Transient Voltage Suppressor 

## **Dual Common Anode Zeners for ESD Protection** 

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These dual monolithic silicon zener diodes are designed for applications requiring transient overvoltage protection capability. They are intended for use in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, medical equipment and other applications. Their dual junction common anode design protects two separate lines using only one package. These devices are ideal for situations where board space is at a premium. 

## **Features** 

- Pb−Free Package is Available 

- • • Low Leakage < 1.0 A @ 5.0 V • . 

- SC−70 Package Allows Two Separate Unidirectional Configurations 

- Low Leakage < 1.0 A @ 5.0 V 

- Breakdown Voltage: 6.4−7.2 V @ 5.0 mA 

- ESD Protection Meeting:16 kV Human Body Model 30 kV Contact = IEC61000−4−2 

- Peak Power: 24 W @ 1.0 ms (Unidirectional), per Figure 1 

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1<br>3<br>2<br>**----- End of picture text -----**<br>


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MARKING<br>DIAGRAM<br>1 ®<br>2<br>68<br>SC−70/SOT−323<br>CASE 419<br>STYLE 4 _<br>68 = Specific Device Code<br>M = Date Code<br>M<br>**----- End of picture text -----**<br>


- Peak Power: 150 W @ 20 s (Unidirectional), per Figure 2 

## **Mechanical Characteristics** 

- Void Free, Transfer−Molded, Thermosetting Plastic Case 

- Corrosion Resistant Finish, Easily Solderable 

- Package Designed for Optimal Automated Board Assembly 

- Small Package Size for High Density Applications 

## **MAXIMUM RATINGS** 

|**Rating**<br>~~ee~~|**Symbol**<br>~~ee~~|**Value**<br>~~ee~~|**Unit**<br>~~ee~~|
|---|---|---|---|
|Steady State Power Dissipation<br>Derate above 25°C (Note 1)<br>Thermal Resistance Junction−to−Ambient<br>~~ee~~|PD<br>R JA<br>~~ee~~<br>~~ee~~|200<br>1.6<br>618<br>~~ee~~<br>~~eee~~|°mW°<br>mW/°C<br>°C/W<br>~~ee~~<br>~~eee~~|
|Operating Junction and Storage<br>Temperature Range<br>~~ee ~~<br>~~ee~~|TJ, Tstg<br> ~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee eee~~|−55 to<br>+150<br>~~ee~~<br>~~ee~~<br>~~eee~~<br>~~eee~~|°C<br>~~ee~~<br>~~ee~~<br>~~eee~~<br>~~eee~~|
|Peak Power Dissipation @ 1.0 ms<br>(Note 2) @ TA=  25°C<br>~~ee~~|PPK<br>~~ee ~~<br>~~ee~~<br>~~ee eee~~<br>~~ee~~|20<br> ~~eee~~<br>~~ee~~<br>~~eee~~<br>~~eee~~|W<br>~~eee~~<br>~~ee~~<br>~~eee~~<br>~~eee~~|
|Peak Power Dissipation @ 20 s (Note 3)<br>@ TA=  25°C<br>~~ee~~|PPK<br>~~ee eee~~<br>~~ee~~<br>~~ee~~|150<br>~~eee~~<br>~~ee~~<br>~~eee~~|W<br>~~eee~~<br>~~ee~~<br>~~eee~~|
|ESD Discharge<br>MIL STD 883C − Method 3015−6<br>IEC61000−4−2, Air Discharge<br>IEC61000−4−2, Contact Discharge<br>~~FL~~|VPP<br>~~ee ~~<br>~~FL~~|16<br>30<br>30<br> ~~eee~~<br>~~FL~~|kV<br>~~eee~~<br>~~FL~~|



## **ORDERING INFORMATION** 

|**Device**<br>DF3A6.8FUT1|**Package**<br>SC−70|**Shipping**†<br>3000/Tape & Reel|
|---|---|---|
|DF3A6.8FUT1G|SC−70<br>(Pb−Free)|3000/Tape & Reel|



- †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

**Preferred** devices are recommended choices for future use and best overall value. 

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 

1. Mounted on FR−5 Board = 1.0 X 0.75 X 0.062 in. 

2. Non−repetitive pulse per Figure 1. 

3. Non−repetitive pulse per Figure 2. 

Publication Order Number: 

**1** 

 Semiconductor Components Industries, LLC, 2004 **July, 2004 − Rev. 1** 

**DF3A6.8FUT1/D** 

**DF3A6.8FUT1** 

## **ELECTRICAL CHARACTERISTICS** 

(TA = 25°C unless otherwise noted) 

**UNIDIRECTIONAL** (Circuit tied to Pins 1 and 3 or 2 and 3) 

|**Symbol**|**Parameter**|
|---|---|
|VRWM|Working Peak Reverse Voltage|
|IR|Maximum Reverse Leakage Current @ VRWM|
|VBR|Breakdown Voltage @ IT|
|IT|Test Current|
|IF|Forward Current|
|VF|Forward Voltage @ IF|
|ZZT|Maximum Zener Impedance @ IZT|
|ZZK|Maximum Zener Impedance @ IZK|



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I<br>IF<br>VC VBR VRWM<br>V<br>IR VF<br>IT<br>IPP<br>Uni−Directional TVS<br>**----- End of picture text -----**<br>


**ELECTRICAL CHARACTERISTICS** (TA = 25°C unless otherwise noted) 

## **UNIDIRECTIONAL** (Circuit tied to Pins 1 and 3 or 2 and 3) 

|**UNIDIRECTIONAL**(Circuit tied to Pins 1 and 3 o|r 2 and 3)||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Conditions**|**Min**|**Typ**|**Max**|**Unit**|
|Forward Voltage|VF|IF= 10 mA||0.8|0.9|V|
|Zener Voltage (Note 4)|VZ|IZT= 5 mA|6.4|6.8|7.2|V|
|Operating Resistance (Note 5)|ZZK|IZK= 0.5 mA|||200|�|
||ZZT|IZT= 5 mA|||50|�|
|Reverse Current|IR1|VRWM= 5 V|||0.5|�A|
|Clamping Voltage|VC|IPP= 2.0 A (Figure 1)<br>IPP= 9.37 A (Figure 2)|||9.6<br>16|V<br>V|
|ESD Protection<br>Human Body Model (HBM)<br>Contact − IEC61000−4−2<br>Air Discharge|||||16<br>30<br>30|kV|



4. VZ measured at pulse test current IZT at an ambient temperature of 25°C. 

5. ZZT and ZZK is measured by dividing the AC voltage drop across the device by the AC current supplied. AC frequency = 1.0 kHz. 

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**2** 

**DF3A6.8FUT1** 

## **TYPICAL CHARACTERISTICS** 

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100<br>PULSE WIDTH (tP) IS 90 tr PEAK VALUE IRSM @ 8  � s<br>tr DEFINED AS THAT POINTWHERE THE PEAK  80 PULSE WIDTH (tP) IS DEFINED<br>100 PEAK VALUE — IRSM CURRENT DECAYS TO  AS THAT POINT WHERE THE<br>50%OF IRSM. 70 PEAK CURRENT DECAY = 8  � s<br>tr ≤ 10  � s 60<br>HALF VALUE IRSM/2 @ 20  � s<br>50<br>40<br>50 HALF VALUE  — IRS<br>M2 30<br>tP<br>tP 20<br>10<br>0 0<br>0 1 2 3 4 0 20 40 60 80<br>t, TIME (ms) t, TIME ( � s)<br>Figure 1. 10  ×  1000  � s Pulse Waveform Figure 2. 8  ×  20  � s Pulse Waveform<br>20.01 200<br>REVERSE VOLTAGE IS FORWARD VOLTAGE IS<br>18.01 180<br>MEASURED WITH A PULSE MEASURED WITH A PULSE<br>16.01 TEST CURRENT IT AT 25°C 160 TEST CURRENT IF AT 25°CF AT 25°C AT 25°C°CC<br>14.01 140<br>12.01 120<br>10.01 100<br>8.01 80<br>6.01 60<br>4.01 40<br>2.01 20<br>0 0<br>6 6.2 6.4 6.6 6.8 7 7.2 7.4 7.6 7.8 8 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2<br>VZ, ZENER VOLTAGE (V) VF, FORWARD VOLTAGE (V)F, FORWARD VOLTAGE (V), FORWARD VOLTAGE (V)<br>Figure 3. Zener Voltage vs. Zener Current Figure 4. Forward Voltage vs. Forward<br>Current<br>100 300<br>f = 1 MHz<br>90 TA = 25°C 250<br>80<br>70<br>200<br>60 UniDirectional Pin 1/2−3<br>50 150<br>40<br>100<br>30<br>BiDirectional Pin 1−2<br>20 50<br>10<br>0 0<br>0 1 2 3 4 5 6 0 25 50 75 100 125 150 175<br>V, BIAS VOLTAGE (V) TA, AMBIENT TEMPERATURE (A, AMBIENT TEMPERATURE (, AMBIENT TEMPERATURE ( ° C)<br>VALUE (%)<br>% OF PEAK PULSE CURRENT<br>, FORWARD CURRENT (mA)<br>IZT, ZENER CURRENT (mA)<br>I F<br>C, CAPACITANCE (pF)<br>PD , POWER DISSIPATION (mW)<br>**----- End of picture text -----**<br>


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200<br>FORWARD VOLTAGE IS<br>180<br>MEASURED WITH A PULSE<br>160 TEST CURRENT IF AT 25°CF AT 25°C AT 25°C°CC<br>140<br>120<br>100<br>80<br>60<br>40<br>20<br>0<br>0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2<br>VF, FORWARD VOLTAGE (V)F, FORWARD VOLTAGE (V), FORWARD VOLTAGE (V)<br>Figure 4. Forward Voltage vs. Forward<br>Current<br>300<br>250<br>200<br>150<br>100<br>50<br>0<br>0 25 50 75 100 125 150 175<br>TA, AMBIENT TEMPERATURE (A, AMBIENT TEMPERATURE (, AMBIENT TEMPERATURE ( ° C)<br>, FORWARD CURRENT (mA)<br>I F<br>PD , POWER DISSIPATION (mW)<br>**----- End of picture text -----**<br>


**Figure 5. Capacitance vs. Bias Voltage** 

**Figure 6. Steady State Power Derating Curve** 

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**3** 

**DF3A6.8FUT1** 

## **PACKAGE DIMENSIONS** 

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SC−70 (SOT−323)<br>CASE 419−04<br>ISSUE L<br>A NOTES:1. DIMENSIONING AND TOLERANCING PER ANSI<br>L Y14.5M, 1982.<br>2. CONTROLLING DIMENSION: INCH.<br>3 INCHES MILLIMETERS<br>DIM MIN MAX MIN MAX<br>S B A 0.071 0.087 1.80 2.20<br>B 0.045 0.053 1.15 1.35<br>1 2 C 0.032 0.040 0.80 1.00<br>D 0.012 0.016 0.30 0.40<br>ih o =:=So= G 0.047 0.055 1.20 1.40<br>D H 0.000 0.004 0.00 0.10<br>J 0.004 0.010 0.10 0.25<br>G K 0.017 REF 0.425 REF<br>L 0.026 BSC 0.650 BSC<br>N 0.028 REF 0.700 REF<br>_ ——— S 0.079 0.095 2.00 2.40<br>C N J STYLE 4:<br>PIN 1. CATHODE<br>2. CATHODE<br>0.05 (0.002) K 3. ANODE<br>H<br>**----- End of picture text -----**<br>


## **SOLDERING FOOTPRINT*** 

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0.65<br>0.025 - 0.65 0.025<br>if<br>a 1.9<br>0.075<br>0.9<br>0.035<br>0.7<br>i<br>0.028<br>SCALE 10:1 mm<br>a e = inches<br>*For additional information on our Pb−Free strategy and soldering<br>details, please download the ON Semiconductor Soldering and<br>Mounting Techniques Reference Manual, SOLDERRM/D.<br>**----- End of picture text -----**<br>


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## **LITERATURE FULFILLMENT** : 

**DF3A6.8FUT1/D** 

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