# IGBT Module, Four Pack, 300 A, 1.68 V, 150 °C, Module

![Product image](https://novapart.co/image/farnell:3942037/)

**URL**: https://novapart.co/products/DF300R07W2H3B77BPSA1/igbt-module-four-pack-300-a-168-v-150-c
**SKU**: DF300R07W2H3B77BPSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || IGBT Modules
**Price**: €39.3700
**Stock**: 10+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| Product Range | EasyPACK 2B Series |
| Igbt Technology | IGBT H3 [Trench/Field Stop] |
| Igbt Termination | Press Fit |
| Power Dissipation | - |
| Igbt Configuration | Four Pack |
| Transistor Mounting | Panel |
| Dc Collector Current | 300A |
| Power Dissipation Pd | - |
| Transistor Case Style | Module |
| Operating Temperature Max | 150°C |
| Junction Temperature Tj Max | 150°C |
| Continuous Collector Current | 300A |
| Collector Emitter Voltage Max | 650V |
| Collector Emitter Voltage V(Br)Ceo | 650V |
| Collector Emitter Saturation Voltage | 1.68V |
| Collector Emitter Saturation Voltage Vce(On) | 1.68V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3942037/)

**DF300R07W2H3_B77 EasyPACK[™] 2B module** aad Infineon 

## **EasyPACK[™] 2B module with Trench/Fieldstop IGBT H3 and rapid diode and PressFIT / NTC** 

## **Features** 

- Electrical features 

- VCES = 650 V 

- IC nom = 150 A / ICRM = 300 A 

- Increased blocking voltage capability up to 650 V 

- Low inductive design 

- Low switching losses 

- Low V CE,sat 

- Mechanical features 

- Al2O3 substrate with low thermal resistance 

- Compact design 

- PressFIT contact technology 

- Rugged mounting due to integrated mounting clamps 

## **Potential applications** 

- Three-level applications 

- Motor drives 

- Solar applications 

## **Product validation** 

- Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068 

## **Description** 

Please read the Important Notice and Warnings at the end of this document 

Datasheet www.infineon.com 

Revision 1.00 2021-11-15 

**DF300R07W2H3_B77 EasyPACK[™] 2B module** 

**Table of contents** 

**==> picture [105 x 47] intentionally omitted <==**

## **Table of contents** 

||**Description**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1|
|---|---|
||**Features**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1|
||**Potential applications**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1|
||**Product validation**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1|
||**Table of contents**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2|
|**1**|**Package**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3|
|**2**|**IGBT, T1 / T4**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3|
|**3**|**Diode, D1 / D4**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5|
|**4**|**IGBT, T2 / T3**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5|
|**5**|**Diode, D2 / D3**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7|
|**6**|**NTC-Thermistor**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8|
|**7**|**Characteristics diagrams**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9|
|**8**|**Circuit diagram**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16|
|**9**|**Package outlines**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17|
|**10**|**Module label code**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18|
||**Revision history**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19|
||**Disclaimer**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20|



Datasheet 

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## **1 Package** 

## **1 Package** 

|**1**<br>**Package**|**1**<br>**Package**|**1**<br>**Package**|**1**<br>**Package**|**1**<br>**Package**|
|---|---|---|---|---|
|**Table 1**<br>**Insulation coordination**|||||
|**Parameter**|**Symbol**|**Note or test condition**|**Values**|**Unit**|
|Isolation test voltage|_V_ISOL|RMS, f = 50 Hz,_t_= 1 min|3.0|kV|
|Internal isolation||basic insulation (class 1, IEC 61140)|Al2O3||
|Creepage distance|_d_Creep|terminal to heatsink|11.5|mm|
|Creepage distance|_d_Creep|terminal to terminal|6.3|mm|
|Clearance|_d_Clear|terminal to heatsink|10.0|mm|
|Clearance|_d_Clear|terminal to terminal|5.0|mm|
|Comparative tracking index|_CTI_||> 200||
|Relative thermal index<br>(electrical)|_RTI_|housing|140|°C|



## **Characteristic values** 

||||||||
|---|---|---|---|---|---|---|
|**Table 2**<br>**Characteristic values**|||||||
|**Parameter**|**Symbol**|**Note or test condition**|**Values**|||**Unit**|
||||**Min.**|**Typ.**|**Max.**||
|Stray inductance module|_L_sCE|||38||nH|
|Storage temperature|_T_stg||-40||125|°C|
|Mounting force per clamp|_F_||40||80|N|
|Weight|_G_|||39||g|



_Note: The current under continuous operation is limited to 25A rms per connector pin._ 

## **2 IGBT, T1 / T4** 

**Table 3 Maximum rated values** 

|**Parameter**|**Symbol**|**Note or test condition**|**Note or test condition**|**Values**|**Unit**|
|---|---|---|---|---|---|
|Collector-emitter voltage|_V_CES||_T_vj= 25 °C|650|V|
|Implemented collector<br>current|_I_CN|||50|A|
|Continuous DC collector<br>current|_I_CDC|_T_vj max= 175 °C|_T_H= 65 °C|40|A|
|Repetitive peak collector<br>current|_I_CRM|_t_P= 1 ms||100|A|
|Gate-emitter peak voltage|_V_GES|||±20|V|



Datasheet 

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## **2 IGBT, T1 / T4** 

|**Table 4**<br>**Characteristic values**|**Table 4**<br>**Characteristic values**|**Table 4**<br>**Characteristic values**||||||
|---|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**|
|||||**Min.**|**Typ.**|**Max.**||
|Collector-emitter saturation<br>voltage|_V_CE sat|_I_C= 50 A,_V_GE= 15 V|_T_vj= 25 °C||1.68|2.00|V|
||||_T_vj= 125 °C||1.86|||
||||_T_vj= 150 °C||1.89|||
|Gate threshold voltage|_V_GEth|_I_C= 0.8 mA, VCE= VGE,_T_vj|= 25 °C|5.05|5.75|6.45|V|
|Gate charge|_Q_G|_V_GE= ±15 V,_V_CE= 400 V|||0.5||µC|
|Internal gate resistor|_R_Gint|_T_vj= 25 °C|||0||Ω|
|Input capacitance|_C_ies|_f_= 100 kHz,_T_vj= 25 °C,_V_CE= 650 V,_V_GE= 0 V|||2.95||nF|
|Reverse transfer capacitance|_C_res|_f_= 100 kHz,_T_vj= 25 °C,_V_CE= 650 V,_V_GE= 0 V|||0.096||nF|
|Collector-emitter cut-of<br>current|_I_CES|_V_CE= 650 V,_V_GE= 0 V|_T_vj= 25 °C|||0.026|mA|
|Gate-emitter leakage current|_I_GES|_V_CE= 650 V,_V_GE= 0 V,_T_vj=|25 °C|||100|nA|
|Turn-on delay time<br>(inductive load)|_t_don|_I_C= 50 A,_V_CE= 300 V,<br>_V_GE= ±15 V,_R_Gon= 2.2 Ω|_T_vj= 25 °C||0.014||µs|
||||_T_vj= 125 °C||0.015|||
||||_T_vj= 150 °C||0.015|||
|Rise time (inductive load)|_t_r|_I_C= 50 A,_V_CE= 300 V,<br>_V_GE= ±15 V,_R_Gon= 2.2 Ω|_T_vj= 25 °C||0.008||µs|
||||_T_vj= 125 °C||0.010|||
||||_T_vj= 150 °C||0.011|||
|Turn-of delay time<br>(inductive load)|_t_dof|_I_C= 50 A,_V_CE= 300 V,<br>_V_GE= ±15 V,_R_Gof= 2.2 Ω|_T_vj= 25 °C||0.124||µs|
||||_T_vj= 125 °C||0.147|||
||||_T_vj= 150 °C||0.150|||
|Fall time (inductive load)|_t_f|_I_C= 50 A,_V_CE= 300 V,<br>_V_GE= ±15 V,_R_Gof= 2.2 Ω|_T_vj= 25 °C||0.038||µs|
||||_T_vj= 125 °C||0.073|||
||||_T_vj= 150 °C||0.084|||
|Turn-on energy loss per<br>pulse|_E_on|_I_C= 50 A,_V_CE= 300 V,<br>_L_σ= 35 nH,_V_GE= ±15 V,<br>_R_Gon= 2.2 Ω, di/dt =<br>4100 A/µs (Tvj= 150 °C)|_T_vj= 25 °C||0.244||mJ|
||||_T_vj= 125 °C||0.406|||
||||_T_vj= 150 °C||0.451|||
|Turn-of energy loss per<br>pulse|_E_of|_I_C= 50 A,_V_CE= 300 V,<br>_L_σ= 35 nH,_V_GE= ±15 V,<br>_R_Gof= 2.2 Ω, dv/dt =<br>5100 V/µs (Tvj= 150 °C)|_T_vj= 25 °C||0.593||mJ|
||||_T_vj= 125 °C||0.94|||
||||_T_vj= 150 °C||1.06|||
|Thermal resistance, junction<br>to heat sink|_R_thJH|per IGBT|||1.19||K/W|
|Temperature under<br>switching conditions|_T_vj op|||-40||150|°C|



Datasheet 

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## **3 Diode, D1 / D4** 

## **3 Diode, D1 / D4** 

|**3**<br>**Diode, D1 / D4**|**3**<br>**Diode, D1 / D4**|**3**<br>**Diode, D1 / D4**||||
|---|---|---|---|---|---|
|**Table 5**<br>**Maximum rated values**||||||
|**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Unit**|
|Repetitive peak reverse<br>voltage|_V_RRM||_T_vj= 25 °C|650|V|
|Continuous DC forward<br>current|_I_F|||100|A|
|Repetitive peak forward<br>current|_I_FRM|_t_P= 1 ms||200|A|
|I2t - value|_I_2_t_|_V_R= 0 V,_t_P= 10 ms|_T_vj= 125 °C|1660|A²s|
||||_T_vj= 150 °C|1530||



**Table 6 Characteristic values** 

|**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Values**|**Values**|**Unit**|
|---|---|---|---|---|---|---|---|
|||||**Min.**|**Typ.**|**Max.**||
|Forward voltage|_V_F|_I_F= 100 A|_T_vj= 25 °C||1.65|2.15|V|
||||_T_vj= 125 °C||1.55|||
||||_T_vj= 150 °C||1.50|||
|Peak reverse recovery<br>current|_I_RM|_I_F= 100 A,_V_R= 300 V,<br>_V_GE= -15 V, -diF/dt =<br>2700 A/µs (Tvj= 150 °C)|_T_vj= 25 °C||48.6||A|
||||_T_vj= 125 °C||63.8|||
||||_T_vj= 150 °C||69.3|||
|Recovered charge|_Q_r|_I_F= 100 A,_V_R= 300 V,<br>_V_GE= -15 V, -diF/dt =<br>2700 A/µs (Tvj= 150 °C)|_T_vj= 25 °C||2.38||µC|
||||_T_vj= 125 °C||4.67|||
||||_T_vj= 150 °C||5.45|||
|Reverse recovery energy|_E_rec|_I_F= 100 A,_V_R= 300 V,<br>_V_GE= -15 V, -diF/dt =<br>2700 A/µs (Tvj= 150 °C)|_T_vj= 25 °C||0.398||mJ|
||||_T_vj= 125 °C||0.822|||
||||_T_vj= 150 °C||0.984|||
|Thermal resistance, junction<br>to heat sink|_R_thJH|per diode|||1.02||K/W|
|Temperature under<br>switching conditions|_T_vj op|||-40||150|°C|



## **4 IGBT, T2 / T3** 

|**4**<br>**IGBT, T2 / T3**|**4**<br>**IGBT, T2 / T3**|**4**<br>**IGBT, T2 / T3**|**4**<br>**IGBT, T2 / T3**|**4**<br>**IGBT, T2 / T3**|**4**<br>**IGBT, T2 / T3**|
|---|---|---|---|---|---|
|**Table 7**<br>**Maximum rated values**||||||
|**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Unit**|
|Collector-emitter voltage|_V_CES||_T_vj= 25 °C|650|V|



**(table continues...)** 

Datasheet 

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**DF300R07W2H3_B77 EasyPACK[™] 2B module** 

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## **4 IGBT, T2 / T3** 

|**Table 7**<br>**(continued) Maximum rated values**|**Table 7**<br>**(continued) Maximum rated values**|**Table 7**<br>**(continued) Maximum rated values**|**Table 7**<br>**(continued) Maximum rated values**|**Table 7**<br>**(continued) Maximum rated values**|**Table 7**<br>**(continued) Maximum rated values**|
|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Unit**|
|Implemented collector<br>current|_I_CN|||150|A|
|Continuous DC collector<br>current|_I_CDC|_T_vj max= 175 °C|_T_H= 65 °C|90|A|
|Repetitive peak collector<br>current|_I_CRM|_t_P= 1 ms||300|A|
|Gate-emitter peak voltage|_V_GES|||±20|V|



|**Table 8**<br>**Characteristic values**|**Table 8**<br>**Characteristic values**|**Table 8**<br>**Characteristic values**||||||
|---|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**|
|||||**Min.**|**Typ.**|**Max.**||
|Collector-emitter saturation<br>voltage|_V_CE sat|_I_C= 150 A,_V_GE= 15 V|_T_vj= 25 °C||1.68|2.00|V|
||||_T_vj= 125 °C||1.86|||
||||_T_vj= 150 °C||1.89|||
|Gate threshold voltage|_V_GEth|_I_C= 2.4 mA, VCE= VGE,_T_vj|= 25 °C|5.05|5.75|6.45|V|
|Gate charge|_Q_G|_V_GE= ±15 V,_V_CE= 400 V|||1.6||µC|
|Internal gate resistor|_R_Gint|_T_vj= 25 °C|||0||Ω|
|Input capacitance|_C_ies|_f_= 100 kHz,_T_vj= 25 °C,_V_CE= 650 V,_V_GE= 0 V|||9.4||nF|
|Reverse transfer capacitance|_C_res|_f_= 100 kHz,_T_vj= 25 °C,_V_CE= 650 V,_V_GE= 0 V|||0.28||nF|
|Collector-emitter cut-of<br>current|_I_CES|_V_CE= 650 V,_V_GE= 0 V|_T_vj= 25 °C|||0.016|mA|
|Gate-emitter leakage current|_I_GES|_V_CE= 650 V,_V_GE= 0 V,_T_vj=|25 °C|||100|nA|
|Turn-on delay time<br>(inductive load)|_t_don|_I_C= 150 A,_V_CE= 300 V,<br>_V_GE= ±15 V,_R_Gon= 4.7 Ω|_T_vj= 25 °C||0.035||µs|
||||_T_vj= 125 °C||0.035|||
||||_T_vj= 150 °C||0.035|||
|Rise time (inductive load)|_t_r|_I_C= 150 A,_V_CE= 300 V,<br>_V_GE= ±15 V,_R_Gon= 4.7 Ω|_T_vj= 25 °C||0.050||µs|
||||_T_vj= 125 °C||0.050|||
||||_T_vj= 150 °C||0.050|||
|Turn-of delay time<br>(inductive load)|_t_dof|_I_C= 150 A,_V_CE= 300 V,<br>_V_GE= ±15 V,_R_Gof= 4.7 Ω|_T_vj= 25 °C||0.241||µs|
||||_T_vj= 125 °C||0.261|||
||||_T_vj= 150 °C||0.268|||
|Fall time (inductive load)|_t_f|_I_C= 150 A,_V_CE= 300 V,<br>_V_GE= ±15 V,_R_Gof= 4.7 Ω|_T_vj= 25 °C||0.023||µs|
||||_T_vj= 125 °C||0.057|||
||||_T_vj= 150 °C||0.080|||



## **(table continues...)** 

Datasheet 

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## **5 Diode, D2 / D3** 

|**Table 8**<br>**(continued) Characteristic values**|**Table 8**<br>**(continued) Characteristic values**|**Table 8**<br>**(continued) Characteristic values**||||||
|---|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**|
|||||**Min.**|**Typ.**|**Max.**||
|Turn-on energy loss per<br>pulse|_E_on|_I_C= 150 A,_V_CE= 300 V,<br>_L_σ= 35 nH,_V_GE= ±15 V,<br>_R_Gon= 4.7 Ω, di/dt =<br>2600 A/µs (Tvj= 150 °C)|_T_vj= 25 °C||3.84||mJ|
||||_T_vj= 125 °C||4.35|||
||||_T_vj= 150 °C||4.51|||
|Turn-of energy loss per<br>pulse|_E_of|_I_C= 150 A,_V_CE= 300 V,<br>_L_σ= 35 nH,_V_GE= ±15 V,<br>_R_Gof= 4.7 Ω, dv/dt =<br>5000 V/µs (Tvj= 150 °C)|_T_vj= 25 °C||2.36||mJ|
||||_T_vj= 125 °C||3.31|||
||||_T_vj= 150 °C||3.64|||
|Thermal resistance, junction<br>to heat sink|_R_thJH|per IGBT|||0.690||K/W|
|Temperature under<br>switching conditions|_T_vj op|||-40||150|°C|



## **5 Diode, D2 / D3** 

|**5**<br>**Diode, D2 / D3**|**5**<br>**Diode, D2 / D3**|**5**<br>**Diode, D2 / D3**||||
|---|---|---|---|---|---|
|**Table 9**<br>**Maximum rated values**||||||
|**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Unit**|
|Repetitive peak reverse<br>voltage|_V_RRM||_T_vj= 25 °C|650|V|
|Continuous DC forward<br>current|_I_F|||50|A|
|Repetitive peak forward<br>current|_I_FRM|_t_P= 1 ms||100|A|
|I2t - value|_I_2_t_|_V_R= 0 V,_t_P= 10 ms|_T_vj= 125 °C|390|A²s|
||||_T_vj= 150 °C|370||



**Table 10 Characteristic values** 

|**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Values**|**Values**|**Unit**|
|---|---|---|---|---|---|---|---|
|||||**Min.**|**Typ.**|**Max.**||
|Forward voltage|_V_F|_I_F= 50 A|_T_vj= 25 °C||1.65|2.15|V|
||||_T_vj= 125 °C||1.55|||
||||_T_vj= 150 °C||1.50|||
|Peak reverse recovery<br>current|_I_RM|_I_F= 50 A,_V_R= 300 V,<br>_V_GE= -15 V, -diF/dt =<br>4100 A/µs (Tvj= 150 °C)|_T_vj= 25 °C||59.9||A|
||||_T_vj= 125 °C||72.3|||
||||_T_vj= 150 °C||76.6|||



## **(table continues...)** 

Datasheet 

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**DF300R07W2H3_B77 EasyPACK[™] 2B module** 

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## **6 NTC-Thermistor** 

|**Table 10**<br>**(continued) Characteristic values**|**Table 10**<br>**(continued) Characteristic values**|**Table 10**<br>**(continued) Characteristic values**||||||
|---|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**|
|||||**Min.**|**Typ.**|**Max.**||
|Recovered charge|_Q_r|_I_F= 50 A,_V_R= 300 V,<br>_V_GE= -15 V, -diF/dt =<br>4100 A/µs (Tvj= 150 °C)|_T_vj= 25 °C||1.49||µC|
||||_T_vj= 125 °C||2.75|||
||||_T_vj= 150 °C||3.18|||
|Reverse recovery energy|_E_rec|_I_F= 50 A,_V_R= 300 V,<br>_V_GE= -15 V, -diF/dt =<br>4100 A/µs (Tvj= 150 °C)|_T_vj= 25 °C||0.332||mJ|
||||_T_vj= 125 °C||0.638|||
||||_T_vj= 150 °C||0.734|||
|Thermal resistance, junction<br>to heat sink|_R_thJH|per diode|||1.64||K/W|
|Temperature under<br>switching conditions|_T_vj op|||-40||150|°C|



## **6 NTC-Thermistor** 

|**6**<br>**NTC-Thermistor**|**6**<br>**NTC-Thermistor**|**6**<br>**NTC-Thermistor**|||||
|---|---|---|---|---|---|---|
|**Table 11**<br>**Characteristic values**|||||||
|**Parameter**|**Symbol**|**Note or test condition**|**Values**|||**Unit**|
||||**Min.**|**Typ.**|**Max.**||
|Rated resistance|_R_25|_T_NTC= 25 °C||5||kΩ|
|Deviation of R100|_ΔR/R_|_T_NTC= 100 °C,_R_100= 493 Ω|-5||5|%|
|Power dissipation|_P_25|_T_NTC= 25 °C|||20|mW|
|B-value|_B_25/50|R2= R25exp[B25/50(1/T2-1/(298,15 K))]||3375||K|
|B-value|_B_25/80|R2= R25exp[B25/80(1/T2-1/(298,15 K))]||3411||K|
|B-value|_B_25/100|R2= R25exp[B25/100(1/T2-1/(298,15 K))]||3433||K|



_Note: Specification according to the valid application note._ 

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## **7 Characteristics diagrams** 

**Output characteristic (typical), IGBT, T1 / T4** IC = f(VCE) VGE = 15 V 

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**----- Start of picture text -----**<br>
100<br>90<br>80<br>70<br>60<br>50<br>40<br>30<br>20<br>10<br>0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0<br>**----- End of picture text -----**<br>


**Transfer characteristic (typical), IGBT, T1 / T4** IC = f(VGE) VCE = 20 V 

**Output characteristic field (typical), IGBT, T1 / T4** IC = f(VCE) T = 150 °C vj 

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**----- Start of picture text -----**<br>
100<br>90<br>80<br>70<br>60<br>50<br>40<br>30<br>20<br>10<br>0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0<br>**----- End of picture text -----**<br>


**Switching losses (typical), IGBT, T1 / T4** E = f(IC) RGoff = 2.2 Ω, RGon = 2.2 Ω, VCE = 300 V, VGE = +/- 15 V 

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**----- Start of picture text -----**<br>
100 2.0<br>90 1.8<br>80 1.6<br>70 1.4<br>60 1.2<br>50 1.0<br>40 0.8<br>30 0.6<br>20 0.4<br>10 0.2<br>0 0.0<br>5 6 7 8 9 10 11 12 0 10 20 30 40 50 60 70 80 90 100<br>**----- End of picture text -----**<br>


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## **7 Characteristics diagrams** 

**Switching losses (typical), IGBT, T1 / T4 Switching times (typical), IGBT, T1 / T4** E = f(RG) t = f(IC) IC = 50 A, VCE = 300 V, VGE = +/- 15 VC = 50 A, VCE = 300 V, VGE = +/- 15 V = 50 A, VCE = 300 V, VGE = +/- 15 VCE = 300 V, VGE = +/- 15 V = 300 V, VGE = +/- 15 VGE = +/- 15 V = +/- 15 V RGoff = 2.2 Ω, RGon = 2.2 Ω, VCE = 300 V, VGE = +/- 15 V, Tvj = 150 °C 

IC = 50 A, VCE = 300 V, VGE = +/- 15 VC = 50 A, VCE = 300 V, VGE = +/- 15 V = 50 A, VCE = 300 V, VGE = +/- 15 VCE = 300 V, VGE = +/- 15 V = 300 V, VGE = +/- 15 VGE = +/- 15 V = +/- 15 V 

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**----- Start of picture text -----**<br>
3.0<br>2.5<br>2.0<br>1.5<br>1.0<br>0.5<br>0.0<br>0 2 4 6 8 10 12 14 16 18 20 22 24<br>**----- End of picture text -----**<br>


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1<br>0.1<br>0.01<br>0.001<br>0 10 20 30 40 50 60 70 80 90 100<br>**----- End of picture text -----**<br>


## **Switching times (typical), IGBT, T1 / T4** t = f(RG) 

**Transient thermal impedance, IGBT, T1 / T4** Zth = f(t) 

IC = 50 A, VCE = 300 V, VGE = +/- 15 V, Tvj = 150 °C 

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**----- Start of picture text -----**<br>
1 10<br>1<br>0.1<br>0.1<br>0.01 0.01<br>0 2 4 6 8 10 12 14 16 18 20 22 24 0.001 0.01 0.1 1 10<br>**----- End of picture text -----**<br>


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## **7 Characteristics diagrams** 

**Reverse bias safe operating area (RBSOA), IGBT, T1 / T4** 

**Forward characteristic (typical), Diode, D1 / D4** IF = f(VF) 

IC = f(VCE) 

RGoff = 2.2 Ω, VGE = ±15 V, Tvj = 150 °C 

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**----- Start of picture text -----**<br>
120<br>110<br>100<br>90<br>80<br>70<br>60<br>50<br>40<br>30<br>20<br>10<br>0<br>0 100 200 300 400 500 600 700<br>**----- End of picture text -----**<br>


**Transient thermal impedance, Diode, D1 / D4** Zth = f(t) 

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**----- Start of picture text -----**<br>
10<br>1<br>0.1<br>0.01<br>0.001 0.01 0.1 1 10 100<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
200<br>180<br>160<br>140<br>120<br>100<br>80<br>60<br>40<br>20<br>0<br>0.0 0.5 1.0 1.5 2.0 2.5<br>**----- End of picture text -----**<br>


**Switching losses (typical), Diode, D1 / D4** Erec = f(IF) RGon = 4.7 Ω, VCE = 300 V 

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**----- Start of picture text -----**<br>
1.6<br>1.4<br>1.2<br>1.0<br>0.8<br>0.6<br>0.4<br>0.2<br>0.0<br>0 20 40 60 80 100 120 140 160 180 200<br>**----- End of picture text -----**<br>


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## **7 Characteristics diagrams** 

## **Switching losses (typical), Diode, D1 / D4** 

Erec = f(RG) 

VCE = 300 V, IF = 100 A 

**Output characteristic (typical), IGBT, T2 / T3** IC = f(VCE) VGE = 15 V 

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**----- Start of picture text -----**<br>
1.2 300<br>275<br>1.0 250<br>225<br>0.8 200<br>175<br>0.6 150<br>125<br>0.4 100<br>75<br>0.2 50<br>25<br>0.0 0<br>0 5 10 15 20 25 30 35 40 45 50 0.0 0.5 1.0 1.5 2.0 2.5 3.0<br>Output characteristic field (typical), IGBT, T2 / T3 Transfer characteristic (typical), IGBT, T2 / T3<br>IC = f(VCE) IC = f(VGE)<br>Tvj = 150 °C VCE = 20 V<br>300 300<br>275 275<br>250 250<br>225 225<br>200 200<br>175 175<br>150 150<br>125 125<br>100 100<br>75 75<br>50 50<br>25 25<br>0 0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5 6 7 8 9 10 11 12<br>**----- End of picture text -----**<br>


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## **7 Characteristics diagrams** 

## **Switching losses (typical), IGBT, T2 / T3** 

E = f(IC) 

RGoff = 4.7 Ω, RGon = 4.7 Ω, VCE = 300 V, VGE = +/- 15 V 

## **Switching losses (typical), IGBT, T2 / T3** 

E = f(RG) IC = 150 A, VCE = 300 V, VGE = +/- 15 V 

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**----- Start of picture text -----**<br>
20 30<br>18<br>25<br>16<br>14<br>20<br>12<br>10 15<br>8<br>10<br>6<br>4<br>5<br>2<br>0 0<br>0 50 100 150 200 250 300 0 5 10 15 20 25 30 35 40 45 50<br>Switching times (typical), IGBT, T2 / T3 Switching times (typical), IGBT, T2 / T3<br>t = f(IC) t = f(RG)<br>RGoff = 4.7 Ω, RGon = 4.7 Ω, VCE = 300 V, VGE = +/- 15 V, Tvj = IC = 150 A, VCE = 300 V, VGE = +/- 15 V, Tvj = 150 °C<br>150 °C<br>1 10<br>1<br>0.1<br>0.1<br>0.01 0.01<br>0 50 100 150 200 250 300 0 5 10 15 20 25 30 35 40 45 50<br>**----- End of picture text -----**<br>


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**Transient thermal impedance, IGBT, T2 / T3 Reverse bias safe operating area (RBSOA), IGBT, T2 /** Zth = f(t) **T3** 

IC = f(VCE) 

RGoff = 4.7 Ω, VGE = ±15 V, Tvj = 150 °C 

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**----- Start of picture text -----**<br>
1<br>0.1<br>0.01<br>0.001 0.01 0.1 1 10<br>**----- End of picture text -----**<br>


**Forward characteristic (typical), Diode, D2 / D3** IF = f(VF) 

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**----- Start of picture text -----**<br>
100<br>90<br>80<br>70<br>60<br>50<br>40<br>30<br>20<br>10<br>0<br>0.0 0.5 1.0 1.5 2.0 2.5<br>**----- End of picture text -----**<br>


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375<br>350<br>325<br>300<br>275<br>250<br>225<br>200<br>175<br>150<br>125<br>100<br>75<br>50<br>25<br>0<br>0 100 200 300 400 500 600 700<br>**----- End of picture text -----**<br>


**Transient thermal impedance, Diode, D2 / D3** Zth = f(t) 

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## **7 Characteristics diagrams** 

## **Switching losses (typical), Diode, D2 / D3** 

Erec = f(IF) 

## RGon = 2.2 Ω, VCE = 300 V 

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**----- Start of picture text -----**<br>
1.6<br>1.4<br>1.2<br>1.0<br>0.8<br>0.6<br>0.4<br>0.2<br>0.0<br>0 10 20 30 40 50 60 70 80 90 100<br>**----- End of picture text -----**<br>


**Switching losses (typical), Diode, D2 / D3** Erec = f(RG) VCE = 300 V, IF = 50 A 

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**----- Start of picture text -----**<br>
1.0<br>0.9<br>0.8<br>0.7<br>0.6<br>0.5<br>0.4<br>0.3<br>0.2<br>0.1<br>0.0<br>0 2 4 6 8 10 12 14 16 18 20 22 24<br>**----- End of picture text -----**<br>


**Temperature characteristic (typical), NTC-Thermistor** R = f(TNTC) 

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## **8 Circuit diagram** 

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## **Figure 1** 

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## **9 Package outlines** 

**9 Package outlines** 

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## **Figure 2** 

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## **10 Module label code** 

## **10 Module label code** 

|**Module label code**|**Module label code**|**Module label code**|**Module label code**|**Module label code**|
|---|---|---|---|---|
|Code format|Data Matrix||Barcode Code128||
|Encoding|ASCII text||Code Set A||
|Symbol size|16x16||23 digits||
|Standard|IEC24720 and IEC16022||IEC8859-1||
||||||
|Code content|_Content_<br>Module serial number<br>Module material number<br>Production order number<br>Date code (production year)<br>Date code (production week)|_Digit_<br>1 – 5<br>6 - 11<br>12 - 19<br>20 – 21<br>22 – 23||_Example_<br>71549<br>142846<br>55054991<br>15<br>30|
|Example|71549142846550549911530<br>71549142846550549911530||||



## **Figure 3** 

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**Revision history** 

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## **Revision history** 

|**Revision history**|||
|---|---|---|
|**Document revision**|**Date of release**|**Description of changes**|
|0.10|2021-06-30|Target datasheet|
|1.00|2021-11-15|Final datasheet|



Datasheet 

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19 

## **Trademarks** 

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**Edition 2021-11-15 IMPORTANT NOTICE Published by** The information given in this document shall in no event be regarded as a guarantee of conditions or **Infineon Technologies AG** characteristics (“Beschaffenheitsgarantie”). **81726 Munich, Germany** 

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## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 



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---

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