# IGBT Module, Dual [Half Bridge], 50 A, 1.35 V, 150 °C, Module

![Product image](https://novapart.co/image/farnell:3625421/)

**URL**: https://novapart.co/products/DF100R07W1H5FPB53BPSA2/igbt-module-dual-half-bridge-50-a-135-v-150-c
**SKU**: DF100R07W1H5FPB53BPSA2
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || IGBT Modules
**Price**: €23.5200
**Stock**: 10+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| Product Range | EasyPACK TRENCHSTOP |
| Igbt Technology | Trench Stop 5 H5/ CoolSiC |
| Igbt Termination | Press Fit |
| Power Dissipation | - |
| Igbt Configuration | Dual [Half Bridge] |
| Transistor Mounting | Panel |
| Dc Collector Current | 50A |
| Power Dissipation Pd | - |
| Transistor Case Style | Module |
| Operating Temperature Max | 150°C |
| Junction Temperature Tj Max | 150°C |
| Continuous Collector Current | 50A |
| Collector Emitter Voltage Max | 650V |
| Collector Emitter Voltage V(Br)Ceo | 650V |
| Collector Emitter Saturation Voltage | 1.35V |
| Collector Emitter Saturation Voltage Vce(On) | 1.35V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3625421/)

## DF100R07W1H5FP_B53 

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J<br>°<br>VCES = 650V<br>IC nom = 50A / ICRM = 100A<br>**----- End of picture text -----**<br>


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DF100R07W1H5FP_B53 

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|**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**|**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**||||||
|---|---|---|---|---|---|---|
|Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage|Tvj= 25°C|VCES|650|||V|
|ImplementierterKollektor-Strom<br>Implementedcollectorcurrent||ICN|50|||A|
|Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent|TH= 100°C, Tvj max= 175°C<br>TH= 25°C, Tvj max= 175°C|IC nom<br>IC|25<br>40|||A<br>A|
|PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent|tP= 1 ms|ICRM|100|||A|
|Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage||VGES|+/-20|||V|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage|IC= 25 A, VGE= 15 V<br>IC= 25 A, VGE= 15 V<br>IC= 25 A, VGE= 15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VCE sat||1,35<br>1,40<br>1,45|1,55|V<br>V<br>V|
|Gate-Schwellenspannung<br>Gatethresholdvoltage|IC= 0,50 mA, VCE= VGE, Tvj= 25°C|VGEth|3,25|4,00|4,75|V|
|Gateladung<br>Gatecharge|VGE= -15 V ... +15 V, VCE= 400V|QG||0,235||µC|
|InternerGatewiderstand<br>Internalgateresistor|Tvj= 25°C|RGint||0,0||Ω|
|Eingangskapazität<br>Inputcapacitance|f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V|Cies||2,80||nF|
|Rückwirkungskapazität<br>Reversetransfercapacitance|f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V|Cres||0,013||nF|
|Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent|VCE= 650 V, VGE= 0 V, Tvj= 25°C|ICES||0,04||mA|
|Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent|VCE= 0 V, VGE= 20 V, Tvj= 25°C|IGES|||100|nA|
|Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload|IC= 25 A, VCE= 400 V<br>VGE= ±15 V<br>RGon= 5,1Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|td on||0,009<br>0,01<br>0,012||µs<br>µs<br>µs|
|Anstiegszeit,induktiveLast<br>Risetime,inductiveload|IC= 25 A, VCE= 400 V<br>VGE= ±15 V<br>RGon= 5,1Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|tr||0,0036<br>0,004<br>0,005||µs<br>µs<br>µs|
|Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload|IC= 25 A, VCE= 400 V<br>VGE= ±15 V<br>RGoff= 5,1Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|td off||0,008<br>0,009<br>0,01||µs<br>µs<br>µs|
|Fallzeit,induktiveLast<br>Falltime,inductiveload|IC= 25 A, VCE= 400 V<br>VGE= ±15 V<br>RGoff= 5,1Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|tf||0,022<br>0,028<br>0,03||µs<br>µs<br>µs|
|EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse|IC= 25 A, VCE= 400 V, LS= 25 nH<br>VGE= ±15 V, di/dt = 4200 A/µs (Tvj= 150°C)<br>RGon= 5,1Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Eon||0,11<br>0,23<br>0,25||mJ<br>mJ<br>mJ|
|AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse|IC= 25 A, VCE= 400 V, LS= 25 nH<br>VGE= ±15 V, du/dt = 7500 V/µs (Tvj= 150°C)<br>RGoff= 5,1Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Eoff||0,15<br>0,17<br>0,21||mJ<br>mJ<br>mJ|
|Kurzschlußverhalten<br>SCdata|VGE ≤15 V, VCC= 400 V<br>VCEmax= VCES-LsCE·di/dt<br>Tvj= 150°C<br>tP ≤0 µs,|ISC||250||A|
|Wärmewiderstand,ChipbisKühlkörper<br>Thermalresistance,junctiontoheatsink|proIGBT/perIGBT<br>validwithIFXpre-appliedthermalinterfacematerial|RthJH|||1,60|K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



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## **Diode,�Wechselrichter�/�Diode,�Inverter Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|650|650||V|
|---|---|---|---|---|---|---|
|ImplementierterDurchlassstrom<br>Implementedforwardcurrent||IFN|30|||A|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|30|||A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|60|||A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|90,0<br>82,0|||A²s<br>A²s|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 30 A, VGE= 0 V<br>IF= 30 A, VGE= 0 V<br>IF= 30 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,60<br>1,55<br>1,50|2,00|V<br>V<br>V|
|Wärmewiderstand,ChipbisKühlkörper<br>Thermalresistance,junctiontoheatsink|proDiode/perdiode<br>validwithIFXpre-appliedthermalinterfacematerial|RthJH|||2,44|K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



## **Diode,�Hochsetzsteller�/�Diode,�Boost** 

## **Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|650|650||V|
|---|---|---|---|---|---|---|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|30|||A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|60|||A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C|I²t|40,5|||A²s|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 30 A, VGE= 0 V<br>IF= 30 A, VGE= 0 V<br>IF= 30 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,45<br>1,60<br>1,65|1,85|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 30 A, - diF/dt = 4200 A/µs (Tvj=150°C)<br>VR= 400 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||10,5<br>10,0<br>10,0||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 30 A, - diF/dt = 4200 A/µs (Tvj=150°C)<br>VR= 400 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||0,012<br>0,0125<br>0,013||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 30 A, - diF/dt = 4200 A/µs (Tvj=150°C)<br>VR= 400 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||0,04<br>0,0405<br>0,041||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisKühlkörper<br>Thermalresistance,junctiontoheatsink|proDiode/perdiode<br>validwithIFXpre-appliedthermalinterfacematerial|RthJH|||1,50|K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



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## **NTC-Widerstand�/�NTC-Thermistor** 

|**NTC-Widerstand/NTC-Thermistor**|**NTC-Widerstand/NTC-Thermistor**||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Nennwiderstand<br>Ratedresistance|TNTC= 25°C|R25||5,00||kΩ|
|AbweichungvonR100<br>DeviationofR100|TNTC= 100°C, R100= 493Ω|∆R/R|-5||5|%|
|Verlustleistung<br>Powerdissipation|TNTC= 25°C|P25|||20,0|mW|
|B-Wert<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K|
|B-Wert<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K|
|B-Wert<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K|



Angaben�gemäß�gültiger�Application�Note. Specification�according�to�the�valid�application�note. 

## **Modul�/�Module** 

|**Modul/Module**|||||||
|---|---|---|---|---|---|---|
|Isolations-Prüfspannung<br>Isolationtestvoltage|RMS, f = 50 Hz, t = 1 min.|VISOL|2,5<br>|||kV|
|InnereIsolation<br>Internalisolation|Basisisolierung(Schutzklasse1,EN61140)<br>basicinsulation(class1,IEC61140)||Al2O3||||
|Kriechstrecke<br>Creepagedistance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||11,5<br>6,3<br>|||mm|
|Luftstrecke<br>Clearance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||10,0<br>5,0<br>|||mm|
|VergleichszahlderKriechwegbildung<br>Comperativetrackingindex||CTI||> 200|||
||||min.|typ.|max.||
|Modulstreuinduktivität<br>Strayinductancemodule||LsCE||15||nH|
|Lagertemperatur<br>Storagetemperature||Tstg|-40||125|°C|
|Höchstzulässige<br>Bodenplattenbetriebstemperatur<br>Maximumbaseplateoperationtemperature||TBPmax|||125|°C|
|Anpresskraft für mech. Bef. pro Feder<br>mountig force per clamp||F|20|-|50|N|
|Gewicht<br>Weight||G||24||g|



Der Strom im Dauerbetrieb ist auf 25 A effektiv pro Anschlusspin begrenzt. The current under continuous operation is limited to 25 A rms per connector pin. Lagerung und Transport von Modulen mit TIM => siehe AN2012-07 Storage and shipment of modules with TIM => see AN2012-07 

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## **Ausgangskennlinie�IGBT,Wechselrichter�(typisch) output�characteristic�IGBT,Inverter�(typical)** 

IC�=�f�(VCE) VGE�=�15�V 

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**----- Start of picture text -----**<br>
50<br>Tvj = 25°C<br>Tvj = 125°C<br>45 T vj  = 150°C<br>40<br>35<br>30<br>25<br>20<br>15<br>10<br>5<br>0<br>0,0 0,5 1,0 1,5 2,0 2,5<br>VCE [V]<br> [A]<br>IC<br>**----- End of picture text -----**<br>


**Übertragungscharakteristik�IGBT,Wechselrichter�(typisch) transfer�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VGE) VCE�=�20�V 

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**----- Start of picture text -----**<br>
50<br>Tvj = 25°C<br>Tvj = 125°C<br>45 T vj  = 150°C<br>40<br>35<br>30<br>25<br>20<br>15<br>10<br>5<br>0<br>3,5 4,0 4,5 5,0 5,5 6,0 6,5 7,0 7,5 8,0<br>VGE [V]<br> [A]<br>IC<br>**----- End of picture text -----**<br>


**Ausgangskennlinienfeld�IGBT,Wechselrichter�(typisch) output�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VCE) Tvj�=�150°C 

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50<br>VGE = 7 V<br>VGE = 9 V<br>45 V GE  = 11 V<br>VGE = 15 V<br>VGE = 17 V<br>40 V GE  = 19 V<br>35<br>30<br>25<br>20<br>15<br>10<br>5<br>0<br>0,0 0,5 1,0 1,5 2,0 2,5<br>VCE [V]<br> [A]<br>IC<br>**----- End of picture text -----**<br>


## **Schaltverluste�IGBT,Wechselrichter�(typisch) switching�losses�IGBT,Inverter�(typical)** Eon�=�f�(IC),�Eoff�=�f�(IC) 

VGE�=�±15�V,�RGon�=�5.1� Ω ,�RGoff�=�5.1� Ω ,�VCE�=�400�V 

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0,6<br>Eon, Tvj = 125°C<br>Eon, Tvj = 150°C<br>Eoff, Tvj = 125°C<br>Eoff, Tvj = 150°C<br>0,5<br>0,4<br>0,3<br>0,2<br>0,1<br>0,0<br>0 5 10 15 20 25 30 35 40 45 50<br>IC [A]<br>E [mJ]<br>**----- End of picture text -----**<br>


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Eon =f(R),E G off =f(R G) tdon =f(l),t=f(l),t C r C doff =f(l)t=f(l),t C r C doff =f(l),t C f =f(l C)<br>VGE =415V,1 C =25A,V CE =400V VGE =415V,R Gon =51 Ω ,R Goff =51 Ω ,V CE =400V, T vj =150°C<br>1,2 1000<br>1,1 E E on on , T , T vj vj  = 125°C  = 150 ° C ttdon r<br>Eoff, Tvj = 125°C t doff<br>Eoff, Tvj = 150°C t f<br>1,0<br>0,9<br>0,8 100<br>0,7<br>0,6<br>0,5<br>0,4 10<br>0,3 EP4eeeeeeee oe<br>y ee<br>0,2<br>0,1<br>0,0 1<br>0 5 10 15 20 25 30 35 40 45 50 55 0 5 10 15 20 25 30 35 40 45 50<br>RG [ Ω ] IC [A]<br>Schaltzeiten IGBT,Wechselrichter (typisch) Transienter Warmewiderstand IGBT,Wechselrichter<br>switching times IGBT,Inverter (typical) transient thermal impedance IGBT, Inverter<br>tdon =f(R),t=f(R),t G r G doff =f(R)t=f(R),t G r G doff =f(R),t=f(R G f G) ZthJH =f (t)<br>VGE =415V,1 C =25A,V CE =400V, T vj = 150°C<br>1000 —_—_———— 10 ee<br>tdon ZthJH : IGBT<br>H|| tt rdoff aaEt I—__—ss—si'/|<br>t f<br>100<br>eet<br>——— EE) | COIN oT<br>ie mal<br>1<br>Oo“ 4:<br>10 |)<br>SS VA<br>i: 1 2 3 4<br>ri[K/W]: 0,0896 0,1054 0,3424 1,0626<br>τ i[s]: 0,000342 0,003454 0,018 0,09605<br>1 0,1<br>CEECE ee) ll]<br>0 5 10 15 20 25 30 35 40 45 50 55 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>E [mJ] t [ns]<br> [K/W]<br>t [ns]<br>thJH<br>Z<br>**----- End of picture text -----**<br>


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## **Sicherer�Rückwärts-Arbeitsbereich�IGBT,Wechselrichter (RBSOA) reverse�bias�safe�operating�area�IGBT,Inverter�(RBSOA)** IC�=�f�(VCE) 

## **Kapazitäts�Charakteristik�IGBT,Wechselrichter�(typisch) capacity�charcteristic�IGBT,Inverter�(typical)** 

C�=�f(VCE) VGE�=�0�V,�Tvj�=�25°C,�f�=�1MHz 

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**----- Start of picture text -----**<br>
VGE�=�±15�V,�RGoff�=�5.1� Ω ,�Tvj�=�150°C<br>**----- End of picture text -----**<br>


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120<br>IC, Modul<br>110 IC, Chip<br>100<br>90<br>80<br>70<br>60<br>50<br>40<br>30<br>20<br>10<br>0<br>0 100 200 300 400 500 600 700<br>VCE  [V]<br> [A]<br>IC<br>**----- End of picture text -----**<br>


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100<br>C ies<br>Coes<br>C res<br>10<br>1<br>0,1<br>0,01<br>0,001<br>0 5 10 15 20 25 30<br>VCE [V]<br>C [nF]<br>**----- End of picture text -----**<br>


**Gateladungs�Charakteristik�IGBT,Wechselrichter�(typisch) gate�charge�characteristic�IGBT,Inverter�(typical)** VGE�=�f(QG) IC�=�25�A,�Tvj�=�25°C 

**Durchlasskennlinie�der�Diode,�Wechselrichter�(typisch) forward�characteristic�of�Diode,�Inverter�(typical)** IF�=�f�(VF) 

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15 60<br>VCC = 400 V Tvj = 25 °C<br>Tvj = 125 °C<br>12 Tvj = 150 °C<br>50<br>9<br>6<br>40<br>3<br>0 30<br>-3<br>20<br>-6<br>-9<br>10<br>-12<br>-15 0<br>0 30 60 90 120 150 180 210 240 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2<br>QG [nC] VF [V]<br> [V]<br> [A]<br>VGE IF<br>**----- End of picture text -----**<br>


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ZthJH =f (t) IF =f(V F)<br>10 pot TE 60 /<br>ZthJH : Diode Tvj = 25 °C<br>[— | Tvj = 125 °C i /<br>Tvj = 150 °C /// /<br>/<br>50<br>//<br>//<br>i<br>et ll 40 hy/i<br>//<br>/i<br>1 30 yy<br>/1<br>/<br>VA /<br>20<br>10<br>i: 1 2 3 4<br>ri[K/W]: 0,2138 0,6081 1,2543 0,3638<br>τ i[s]: 0,0004165 0,009878 0,07189 0,6098<br>0,1 0<br>0,001 0,01 0,1 1 10 0,0 0,5 1,0 1,5 2,0 2,5<br>t [s] VF [V]<br> [K/W]thJH  [A]IF<br>Z<br>**----- End of picture text -----**<br>


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Erec =f il F) Erec =f(R G)<br>RGon =5.1 Ω ,V CE =400V IF =30A,V CE =400V<br>0,0600 0,0500<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>Erec, Tvj = 150°C Erec, Tvj = 150°C<br>0,0500<br>F — 0,0400 c ALLL.<br>DH<br>Va<br>V4<br>V4<br>0,0400<br>0,0300<br>0,0300<br>0,0200<br>0,0200<br>0,0100<br>0,0100<br>0,0000 0,0000<br>0 10 20 30 40 50 60 0 5 10 15 20 25 30 35 40 45 50 55<br>IF [A] RG [ Ω ]<br>E [mJ] E [mJ]<br>**----- End of picture text -----**<br>


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DF100R07W1H5FP_B53 

ZthJH 

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10 100000<br>ZthJH : Diode Rtyp<br>10000<br>a<br>Ul TTT ——<br>1 \<br>eevieSeeel Ne<br>mE at TT<br>1000<br>} ee ee ee ee<br>i: 1 2 3 4<br>ri[K/W]: 0,1429 0,265 0,366 0,7261<br>τ i[s]: 0,000433 0,002797 0,01671 0,1058<br>0,1 100<br>0,001 0,01 0,1 1 10 0 20 40 60 80 100 120 140 160<br>t [s] TNTC [°C]<br>] Ω<br> [K/W]<br>R[<br>thJH<br>Z<br>**----- End of picture text -----**<br>


9 

Datasheet 

2017-04-06 

DF100R07W1H5FP_B53 

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10 

V�3.0 2017-04-06 

Datasheet 

## **WARNHINWEIS** 

## **WARNINGS** 



## Links

- [View this product on Novapart](https://novapart.co/products/DF100R07W1H5FPB53BPSA2/igbt-module-dual-half-bridge-50-a-135-v-150-c)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/df100r07w1h5fpb53bpsa2/igbt-module-dual-650v-50a/dp/3625421)
---

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