# Bridge Rectifier, Single Phase, 600 V, 1 A, SDIP, 4 Pins, 1.1 V

![Product image](https://novapart.co/image/farnell:3606048/)

**URL**: https://novapart.co/products/DF06S1/bridge-rectifier-single-phase-600-v-1-a-sdip-4
**SKU**: DF06S1
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Bridge Rectifier Diodes
**Price**: €0.1570
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| Svhc | Lead (27-Jun-2024) |
| No. Of Pins | 4Pins |
| No. Of Phases | Single Phase |
| Product Range | - |
| Forward Voltage Max | 1.1V |
| Forward Surge Current | 35A |
| Average Forward Current | 1A |
| Bridge Rectifier Mounting | Surface Mount |
| Operating Temperature Max | 150°C |
| Bridge Rectifier Case Style | SDIP |
| Repetitive Peak Reverse Voltage | 600V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3606048/)

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## Bridge Rectifier **-** DF005S1 DF10S1 

## **Description** 

With the ever-pressing need to improve power supply efficiency, improve surge rating, improve reliability, and reduce size, the DFxS1 family sets a new standard in performance and cost saving. 

**PDIP4 GW CASE 709AE** 

The DFxS1 family balances performance against cost. The design offers a moderate surge rating of 35 A required to handle inrush surge and maintain good reliability, with fair price. 

The DFxS1 achieves good performance in a SDIP surface mount form factor, reducing board space and volumetric requirements vs. competitive devices. 

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## **Features** 

Maximum Surge Rating: 

- ♦ IFSM = 35 A 

## **MARKING DIAGRAM** 

- ♦ I[2] t = 5.1 A[2] Sec 

Optimized VF: Typical 0.95 V at 1 A, 25 °C 

DF10S Socket Compatible 

Glass Passivated Junctions 

Lead Free Compliant to EU RoHS 2002/95/EU Directives Green Molding Compound: IEC61249 

Qualified with IR Reflow and Wave Soldering 

$YZYWW XXXXX $Y = **onsemi** Logo Z = Assemlby Plant Code YWW = Date Code (Year and Week) XXXXX = Specific Device Code 

## **ORDERING INFORMATION** 

See detailed ordering and shipping information on page 4 of this data sheet. 

NOTE: Some of the device on this data sheet have been **DISCONTINUED** . Please refer to the table on page 4. 

Publication Order Number: **DF10S1/D** 

**1** 

© Semiconductor Components Industries, LLC, 2014 **April, 2026 − Rev. 4** 

**DF005S1-DF10S1** 

**ABSOLUTE MAXIMUM RATINGS** (Values are at TA = 25 ° C unless otherwise noted.) 

|**Symbol**<br>**Parameter**<br>**Value**<br>**Unit**<br>**DF005S1**<br>**DF01S1**<br>**DF02S1**<br>**DF04S1**<br>**DF06S1**<br>**DF08S1**<br>**DF10S1**<br>VRRM<br>Maximum Recurrent Peak<br>Reverse Voltage<br>50<br>100<br>200<br>400<br>600<br>800<br>1000<br>V<br>VRMS<br>Maximum RMS Bridge Input<br>Voltage<br>35<br>70<br>140<br>280<br>420<br>560<br>700<br>V<br>~~a~~<br>~~er~~<br>~~ee ee eee~~<br>~~ee~~|
|---|
|VDC<br>Maximum DC Blocking Voltage<br>50<br>100<br>200<br>400<br>600<br>800<br>1000<br>V<br>IF(AV)<br>Maximum Average Forward<br>Current TA= 40 C<br>1.0<br>A<br>IFSM<br>Peak Forward Surge Current<br>8.3 ms Single Half-Sine Wave<br>Superimposed on Rated Load<br>(JEDEC Method)<br>35<br>A<br>TSTG<br>Storage Temperature Range<br>−55 to +150<br>°C<br>~~Aff~~<br>~~dt~~|
|TJ<br>Operating Junction<br>Temperature Range<br>−55 to +150<br>°C<br>~~a a~~|
|Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality|
|should not be assumed, damage may occur and reliability may be affected.|
|**THERMAL CHARACTERISTICS**(Note 1)|
|**Symbol**<br>**Parameter**<br>**Conditions**<br>**Max**<br>**Unit**<br>R JA<br>Thermal Resistance, Junction to Ambient<br>Single-Die Measurement<br>(Maximum Land Pattern: 13×13 mm)<br>65<br>°C/W<br>Multi-Die Measurement<br>(Maximum Land Pattern: 13×13 mm)<br>50<br>Multi-Die Measurement<br>(Minimum Land Pattern: 1.3×1.5 mm)<br>105<br>JL<br>Thermal Characterization Parameter,<br>Junction to Lead<br>Single-Die Measurement<br>(Maximum and Minimum Land Pattern)<br>27<br>°C/W<br>1. The thermal resistances (R JA&<br>JL) are characterized with the device mounted on the following FR4 printed circuit boards, as shown in<br>~~>=!~~<br>~~a~~|
|Figure 1 and Figure 2. PCB size: 76.2×114.3 mm.|
|Heating effect from adjacent dice is considered and only two dices are powered at the same time.|



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F F<br>S e S __.<br>S S<br>F F<br>**----- End of picture text -----**<br>


**Figure 1. Maximum Pads of 2 oz Copper** 

**Figure 2. Minimum Pads of 2 oz Copper** 

**ELECTRICAL CHARACTERISTICS** (Values are at TA = 25 ° C unless otherwise noted.) 

|**ELECTRICAL CHARACTERISTICS**|**ELECTRICAL CHARACTERISTICS**(Values are at TA = 25A = 25= 25|(Values are at TA = 25A = 25= 25°C unless otherwise noted.)|C unless otherwise noted.)||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Conditions**|**Min**|**Typ**|**Max**|**Unit**|
|VF|Forward Voltage Drop per Bridge Element|IF= 1.0 A|||1.1|V|
|IR|DC Reverse Current<br>at Rated DC Blocking Voltage|TJ= 25°C|||3|A|
|||TJ= 125°C|||500||
|I2t|Rating for Fusing (t < 8.3 ms)||||5.1|A2S|
|CJ|Junction Capacitance|VR= 4.0 V, f = 1.0 MHz||10||pF|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product 

performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

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**DF005S1-DF10S1** 

## **TYPICAL PERFORMANCE CHARACTERISTICS** 

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**----- Start of picture text -----**<br>
100<br>TJ = 150 J = 150  = 150  ° C<br>10<br>4a SS —— TJ = 125 J = 125  = 125  ° C<br>1<br>po<br>0.1<br>TJ = 25 J = 25  = 25  ° C<br>0.01<br>————.————___--—<br>0.001<br>TJ = −55 J = −55  = −55  ° C<br>=<br>0.0001 a<br>0 50 100 150 200 250 300 350 400<br>VR, Reverse Voltage (V)R, Reverse Voltage (V), Reverse Voltage (V)<br>Figure 4. Typical Reverse Characteristics<br>A)<br>, Reverse Current (IRR<br>IRR<br>**----- End of picture text -----**<br>


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10 100<br>TJ = 150 J = 150  = 150  ° C<br>10<br>SRS. 4a SS —— TJ = 125 J = 125  = 125  ° C<br>1 itll TJ = 150  ° C  LAA ye 1 po<br>T J  = 125 ° C 0.1<br>TJ = 25 J = 25  = 25  ° C<br>0.1 TJ = 25  ° C 0.01<br>TI NWALAIZ SN ————.————___--—<br>T J  = −55  ° C 0.001 TJ = −55 J = −55  = −55  ° C<br>Lt | | TAAL | A | Lt =<br>0.01 P LL IYALIL AIT AL TT ETT 0.0001 a<br>0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 50 100 150 200 250 300 350 400<br>VF, Forward Voltage Drop (V) VR, Reverse Voltage (V)R, Reverse Voltage (V), Reverse Voltage (V)<br>Figure 3. Typical Instantaneous Forward Figure 4. Typical Reverse Characteristics<br>Characteristics<br>1.0 40<br>TTINT<br>TIT ITII ITT<br>0.8<br>Nee 30 KE<br>PTT IX ETT ‘<br>Max Pad (Single Die)<br>0.6 a pf<br>20<br>ECR | EE tT<br>0.4<br>PtP IN EBS<br>ty EEN EE 10 see<br>0.2<br>PEPE TTT<br>PTT TTT TX ET<br>0.0 PEEP N ETT 0 Pte tT | | ty<br>60 80 100 120 140 160 180 200 0 20 40 60 80 100<br>Ambient Temperature ( C) Number of Cycles at 60 Hz<br>Figure 5. Maximum Average Current vs. Ambient Figure 6. Peak Forward Surge Current vs.<br>Temperature Number of Cycles at 60 Hz<br>16<br>14 f = 1 MHz<br>12 RNi |E| | tt | | o<br>10 rN | | EE | |<br>8<br>PNET<br>6 rT PE PE Pt tt<br>r [EEL<br>4<br>r | | | | | dT | Pr<br>2 | | | dT dE TY | |<br>0 FT TdT dT | | | Tt<br>0 10 20 30 40 50<br>VR, Reverse Voltage (V)<br>A)<br>, Forward Current (A)IF , Reverse Current (IRR<br>Average Current (DC)<br>, Peak Forward Surge Current (A)<br>IFSM<br>, Junction Capacitance (pF)<br>J<br>C<br>**----- End of picture text -----**<br>


**Figure 7. Typical Junction Capacitance** 

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**DF005S1-DF10S1** 

## **ORDERING INFORMATION** 

**Part Number Top Mark Package Shipping**[†] DF08S1 DF08S1 PDIP4 GW 1500 / Tape & Reel (Pb-Free, Halide Free) **DISCONTINUED** (Note 2) **Part Number Top Mark Package Shipping**[†] DF005S1 DF005S1 PDIP4 GW 1500 / Tape & Reel (Pb-Free, Halide Free) DF01S1 DF01S1 DF02S1 DF02S1 DF04S1 DF04S1 DF06S1 DF06S1 DF10S1 DF10S1 ~~==~~ † For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 2. **DISCONTINUED:** These devices are not available. Please contact your **onsemi** representative for information. The most current information on these devices may be available on www.onsemi.com. 

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**DF005S1-DF10S1** 

## **REVISION HISTORY** 

|**Revision**|**Description of Changes**|**Date**|
|---|---|---|
|4|Removed “Discontinued” watermark and updated Ordering Information table according to<br>current part number availability.|4/13/2026|



This document has undergone updates prior to the inclusion of this revision history table. The changes tracked here only reflect updates made on the noted approval dates. 

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MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

**PDIP4 GW** CASE 709AE ISSUE O 

DATE 31 JUL 2016 

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5.200<br>5.000<br>1.30<br>4 3 1.50<br>PIN1 ID<br>OPTIONAL<br>6.500 10.300<br>6.200 9.400 10.40<br>1 2<br>1.200<br>0.890 5.10<br>TOP VIEW LAND PATTERN RECOMMENDATION<br>8.510 7.874<br>CHAMFER 8.050 7.370<br>OPTIONAL<br>2.60<br>0.330<br>2.20<br>0.220<br>0.330<br>1.530<br>1.12 0.076<br>1.020<br>SIDE VIEW END VIEW<br>**----- End of picture text -----**<br>


## NOTES: 

- A. THIS PACKAGE DOES NOT CONFORM TO ANY REFERENCE STANDARD. 

- B. ALL DIMENSIONS ARE IN MILLIMETERS. 

- C. DIMENSIONS ARE EXCLUSIVE OF BURRS, 

   - MOLD FLASH AND TIE BAR PROTRUSIONS. 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98AON13473G** Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. **DESCRIPTION: PDIP4 GW PAGE 1 OF 1** 

**onsemi** and                     are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others. 

www.onsemi.com 

© Semiconductor Components Industries, LLC, 2016 

**onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** ’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

## **ADDITIONAL INFORMATION** 

**TECHNICAL PUBLICATIONS** : **ONLINE SUPPORT** : www.onsemi.com/support **Technical Library:** www.onsemi.com/design/resources/technical−documentation **For additional information, please contact your local Sales Representative at onsemi Website:** www.onsemi.com www.onsemi.com/support/sales 

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