# Silicon Carbide Schottky Diode, Single, 1.2 kV, 96 A, 192 nC, TO-247

![Product image](https://novapart.co/image/farnell:4848985/)

**URL**: https://novapart.co/products/DCK40I1200HA/silicon-carbide-schottky-diode-single-12-kv-96-a
**SKU**: DCK40I1200HA
**Manufacturer**: LITTELFUSE
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Schottky Diodes || Silicon Carbide Schottky Diodes
**Price**: €4.8100
**Stock**: 200+
**Lead Time**: 141 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 2 Pin |
| Product Range | - |
| Qualification | - |
| Diode Mounting | Through Hole |
| Diode Case Style | TO-247 |
| Diode Configuration | Single |
| Average Forward Current | 96A |
| Total Capacitive Charge | 192nC |
| Operating Temperature Max | 175°C |
| Repetitive Peak Reverse Voltage | 1.2kV |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:4848985/)

Silicon Carbide Schottky Diode **Datasheet** 

**DCK40I1200HA** 1200 V, 40 A SiC Schottky Diode 

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RoHS<br>**----- End of picture text -----**<br>


## **Features** 

- Max junction temperature of 175 °C 

- High surge current capacity 

- Extremely fast reverse recovery time 

- High-frequency operation 

- Temperature independent switching behavior 

- Positive temperature coefficient on VF 

## **Applications** 

- Solar power boost 

- Inverter free wheeling diodes 

- Vienna 3-Phase PFC 

- Switching mode power supplies 

## **Pinout Diagram** TO-247-2L 

**Product Summary** 

Tab **Characteristic Value Unit** Case VRRM 1200 V IF (Tc = 142 °C) 40 A Qc 192 nC ~~>~~ C (1) A (2) ~~YY~~ 1 2 

**1:** Cathode; **2:** Anode; **Tab:** Case 

© 2025 Littelfuse, Inc. **1** Specifications are subject to change without notice. Pdlitteuse ~~=~~ Revised: XZ 01/13/2025 

© 2025 Littelfuse, Inc. Specifications are subject to change without notice. Revised: XZ 01/13/2025 

Silicon Carbide Schottky Diode **Datasheet** 

DCK40I1200HA 

**Maximum Ratings** (Tc = 25 °C unless otherwise specified) 

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Symbol Characteristic Conditions Value Unit<br>**----- End of picture text -----**<br>


|**Symbol**|**Characteristic**|**Conditions**|**Conditions**|**Value**|**Unit**|
|---|---|---|---|---|---|
|||||||
|VRRM|Repetitive peak reverse voltage|–||1200|V|
|VDC|DC blocking voltage|–||1200|V|
|IF|Continuous forward current|–|Tc= 25°C|96|A|
||||Tc= 135°C|46.2||
||||Tc= 142°C|40||
|IFSM|Non-repetitive surge forward current|Sine halfwave @ Tc= 25°C, tp= 10|ms|260|A|
|IFRM|Repetitive peak forward current<br>(Frequency = 0.1 Hz, 100 cycles)|Sine halfwave @ Tc= 25°C, tp= 10|ms|220|A|
|Ptot|Total power dissipation|–|Tc= 25°C|428|W|
||||Tc= 150°C|71.4||
|I2t|I2t|Tc= 25 °C, tp= 10 ms||392|A2s|
|Tvj|Virtual junction temperature range|–||–55 to 175|°C|
|Tstg|Storage temperature range|–||–55 to 175|°C|
|M|Mounting torque|M3 screw||0.7|Nm|



**Note:** Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

## **Thermal Characteristics** 

|**Symbol**|**Characteristic**|**Value**|**Value**|**Value**|**Unit**|
|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**||
|Rth(j-c)|Thermal resistance, junction to caseFig.7|–|0.35|–|K/W|



## **Electrical Characteristics** (Tvj = 25 °C unless otherwise specified) 

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Value<br>Symbol Characteristic Conditions Unit<br>Min. Typ. Max.<br>**----- End of picture text -----**<br>


|**Symbol**|**Characteristic**|**Conditions**|**Conditions**|**Value**|**Value**|**Value**|**Unit**|
|---|---|---|---|---|---|---|---|
|||||**Min.**|**Typ.**|**Max.**||
|||||||||
|VF|Forward voltageFig.1|IF= 40A|Tvj= 25 °C|–|1.48|1.80|V|
||||Tvj= 175 °C|–|2.30|3.00||
|IR|Reverse currentFig.2|VR= 1200 V|Tvj= 25 °C|–|10|300|μA|
||||Tvj= 175 °C|–|60|1000||
|C|Total capacitanceFig.3|VR= 1 V, f = 1 MHz||–|2075|–|pF|
|||VR= 400 V, f = 1 MHz||–|180|–||
|||VR= 800 V, f = 1 MHz||–|137|–||
|Qc|Total capacitive chargeFig.4|VR= 800 V, Tvj= 25 °C, Qc= ∫<br>VR<br>0 C(V)dV||–|192|–|nC|
|Ec|Capacitance stored energyFig.5|VR= 800 V, Tvj= 25 °C, Ec= ∫<br>VR<br>0 C(V)•VdV||–|54.9|–|μJ|



© 2025 Littelfuse, Inc. Specifications are subject to change without notice. Revised: XZ 01/13/2025 

**2** 

Silicon Carbide Schottky Diode **Datasheet** 

DCK40I1200HA 

## **Characteristic Curves** 

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Fig. 1. Typical Forward Characteristics<br>80<br>70<br>–55 ºC<br>60 25 ºC<br>75 ºC<br>50<br>125 ºC<br>150 ºC<br>40<br>175 ºC<br>30<br>20<br>10<br>0<br>0 0.5 1 1.5 2 2.5 3<br>VF (V)<br>(A)<br>IF<br>**----- End of picture text -----**<br>


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Fig. 3. Capacitance vs. Reverse Voltage<br>**----- End of picture text -----**<br>


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3000<br>2500<br>2000<br>1500<br>1000<br>500<br>0<br>0.01 0.1 1 10 100 1000<br>VR (V)<br>C (pF)<br>**----- End of picture text -----**<br>


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Fig. 5. Capacitance Stored Energy<br>60<br>55<br>50<br>45<br>40<br>35<br>30<br>25<br>20<br>15<br>10<br>5<br>0<br>0 200 400 600 800<br>VR (V)<br> (μJ)Ec<br>**----- End of picture text -----**<br>


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Fig. 2. Typical Reverse Characteristics<br>1E-04<br>175 °C<br>150 °C<br>1E-05 125 °C<br>75 °C<br>25 °C<br>–55 °C<br>1E-06<br>1E-07<br>1E-08<br>200 400 600 800 1000 1200 1400 1600<br>VR (V)<br>Fig. 4. Total Capacitive Charge vs. Reverse Voltage<br>200<br>180<br>160<br>140<br>120<br>100<br>80<br>60<br>40<br>20<br>0<br>0 200 400 600 800<br>VR (V)<br> (A)<br>IR<br> (nC)Qc<br>**----- End of picture text -----**<br>


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Fig. 6. Power Derating<br>450<br>400<br>350<br>300<br>250<br>200<br>150<br>100<br>50<br>0<br>25 50 75 100 125 150 175<br>Tc (°C)<br> (W)<br>tot<br>P<br>**----- End of picture text -----**<br>


© 2025 Littelfuse, Inc. Specifications are subject to change without notice. Revised: XZ 01/13/2025 

**3** 

Silicon Carbide Schottky Diode **Datasheet** 

DCK40I1200HA 

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Fig. 7. Transient Thermal Impedance<br>1E+00<br>1E-01<br>D = 0.5<br>0.3<br>0.1<br>1E-02 0.05<br>0.02<br>0.01<br>Single Pulse<br>1E-03<br>1E-04<br>1E-06 1E-05 1E-04 1E-03 1E-02 1E-01 1E+00<br>tp (s)<br>(K/W)<br>th(j-c)<br>Z<br>**----- End of picture text -----**<br>


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Fig. 8. Forward Current vs. Case Temperature<br>200<br>180<br>160<br>140 D = 0.3<br>0.5<br>120 0.7<br>100 1.0<br>80<br>60<br>40<br>20<br>0<br>25 50 75 100 125 150 175<br>Tc (ºC)<br>I (A)F<br>**----- End of picture text -----**<br>


## **Diode V Model for Simulation F** 

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I V R<br>0 0<br>**----- End of picture text -----**<br>


VF(Tj) = V0 + IR0 V0 = 1 × 10[–6] • T j2 – 0.0013 • Tj + 0.968 R0 = 4 × 10[–7] • T j2 + 7 × 10–5  0.0001 • Tj + 0.0112 

## **Notes** 

- Tj is the junction temperature in ºC 

- Range valid from 25 ºC to 175 ºC 

- Model represents performance of a typical chart 

## **Part Number and Marking** 

DCK40I1200HA = Part Material Number 

YY = Year 

WW = Work Week 

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DCK40I1200HA<br>YYWWZ<br>XXXX<br>**----- End of picture text -----**<br>


Z = Assembly Location XXXX = Lot Traceability 

© 2025 Littelfuse, Inc. Specifications are subject to change without notice. Revised: XZ 01/13/2025 

**4** 

Silicon Carbide Schottky Diode **Datasheet** 

DCK40I1200HA 

## **Part Outline Drawing** TO-247-2L 

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E A<br>A2<br>ee _ —s<br>Q<br>fer -<br>E2 D<br>1 2<br>| |<br>[ | ! A1<br>L1 Exposed Cu<br>L<br>|<br>b2 ~ b It c<br>_<br>E1 D2<br>S<br>D1<br>ØP1<br>NL<br>ØP<br>tS<br>D D |<br>A_|!|_4<br>t e b1, b3 —<br>(c) c1<br>C C<br>|, e a<br>i b, b2 _ |<br>Section C–C, D–D<br>e<br>**----- End of picture text -----**<br>


|**Symbol**<br>A<br>A1|**Inches**<br>**Min.**<br>**Typical**<br>**Max.**<br>0.190<br>–<br>0.205<br>0.087<br>–<br>0.102<br>~~Td~~<br>~~ee~~||**Millimeters**<br>**Min.**<br>**Typical**<br>**Max**<br>4.83<br>–<br>5.21<br>2.20<br>–<br>2.60|**Millimeters**<br>**Min.**<br>**Typical**<br>**Max**<br>4.83<br>–<br>5.21<br>2.20<br>–<br>2.60|**Millimeters**<br>**Min.**<br>**Typical**<br>**Max**<br>4.83<br>–<br>5.21<br>2.20<br>–<br>2.60|
|---|---|---|---|---|---|
|A2<br>b<br>b1|0.059<br>–<br>0.098<br>0.039<br>–<br>0.055<br>0.039<br>–<br>0.053<br>~~ee~~<br>~~ee~~||1.50<br>1.00<br>0.99|–<br>–<br>–|2.49<br>1.40<br>1.35|
|b2|0.071<br>–<br>0.095||1.80|–|2.41|
|b3<br>c<br>c1<br>D<br>D1<br>D2<br>E<br>E1<br>E2<br>e<br>L<br>L1<br>ØP|0.065<br>–<br>0.094<br>1.65<br>–<br>0.020<br>–<br>0.028<br>0.50<br>–<br>0.015<br>–<br>0.028<br>0.38<br>–<br>0.799<br>–<br>0.831<br>20.30<br>–<br>0.515<br>–<br>–<br>13.08<br>–<br>0.020<br>–<br>0.053<br>0.51<br>–<br>0.608<br>–<br>0.635<br>15.45<br>–<br>0.516<br>–<br>–<br>13.10<br>–<br>0.145<br>–<br>0.216<br>3.68<br>–<br>0.214 BSC<br>5.44 BSC<br>0.780<br>–<br>0.827<br>19.80<br>–<br>–<br>–<br>0.177<br>–<br>–<br>0.138<br>–<br>0.146<br>3.50<br>–<br>~~ed~~<br>~~4}~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~—t_t—_—_t—~~<br>~~ee~~<br>~~ee~~<br>~~ee~~||||2.39<br>0.70<br>0.70<br>21.10<br>–<br>1.35<br>16.13<br>–<br>5.49<br>21.00<br>4.50<br>3.70|
|ØP1<br>Q|–<br>–<br>0.291<br>0.212<br>–<br>0.244<br>~~ee~~||–<br>5.39|–<br>–|7.40<br>6.20|
|S|0.238<br>–<br>0.248||6.04|–|6.30|



## **Note:** 

**1.** Package Reference: JEDEC TO247, Variation AD 

**2.** Slot required, notch may be rounded or rectangular 

**3.** Dimension D&E do not include mold flash 

**4.** Subject to change without notice 

## **Disclaimer Notice** 

Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. 

Part of: 

Read complete Disclaimer Notice at http://www.littelfuse.com/disclaimer-electronics. 

© 2025 Littelfuse, Inc. Specifications are subject to change without notice. Revised: XZ 01/13/2025 

**5** 



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- [Supplier page](https://es.farnell.com/littelfuse/dck40i1200ha/sic-schottky-diode-1-2kv-96a-to/dp/4848985)
---

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