D5V0F2U3LP08-7B

**D5V0F2U3LP08** &. ae **2 CHANNEL LOW CAPACITANCE TVS DIODE ARRAY** 

## **Product Summary** 

|**VBR (min)**|**IPP (max)**|**CT (typ)**|
|---|---|---|
|6V|1.5A|0.5pF|



## **Description** 

This new generation TVS is designed to protect sensitive electronics from the damage due to ESD. The combination of small size and high ESD surge capability makes it ideal for use in portable applications such as cellular phones, digital cameras, and MP3 players. 

## **Applications** 

- Cellular Handsets 

- Portable Electronics 

- Computers and Peripheral 

## **Features** 

- Low Profile Package (0.04mm max) and Ultra-small PCB Footprint Area (0.85 x 0.65mm max) Suitable for Compact Portable Electronics 

- Provides ESD Protection per IEC 61000-4-2 Standard: Air  ±15kV, Contact  ±15kV 

- 2 Channels of ESD Protection 

- Low Channel Input Capacitance 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

## **Mechanical Data** 

- Case: X2-DFN0806-3 

- Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminals: NiPdAu over Copper leadframe. Solderable per MILSTD-202, Method 208 © **e4** 

- Weight: 0.001 grams (approximate) 

X2-DFN0806-3 

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Bottom View<br>**----- End of picture text -----**<br>


Device Schematic 

## **Ordering Information** (Note 4) 

|**Product**|**Compliance**|**Marking**|**Reel Size(inches)**|**Tape Width(mm)**|**Quantity per Reel**|
|---|---|---|---|---|---|
|D5V0F2U3LP08-7B|Standard|U9|7|8|10,000/Tape & Reel|



Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. 

## **Marking Information** 

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U9<br>**----- End of picture text -----**<br>


U9 = Product Type Marking Code 

Top View Bar Denotes Cathode Side 

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D5V0F2U3LP08 Document number: DS36615 Rev. 1 - 2 

May 2014 © Diodes Incorporated 

**D5V0F2U3LP08** 

**Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|
||||||
|**Characteristic**|**Symbol**|**Value**|**Unit**|**Conditions**|
|Peak Pulse Current|IPP|1.5|A|8/20µs (Note 7)|
|ESD Protection – Contact Discharge|VESD_Contact|±15|kV|Standard IEC 61000-4-2|
|ESD Protection – Air Discharge|VESD_Air|±15|kV|Standard IEC 61000-4-2|



## **Thermal Characteristics** 

|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|
|---|---|---|---|
|||||
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Power Dissipation (Note 5)|PD|250|mW|
|Thermal Resistance, Junction to Ambient  TA= +25°C|RθJA|500|°C/W|
|Operating and Storage Temperature Range|TJ, TSTG|-55 to +150|°C|



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Electrical Characteristics  (@TA = +25°C, unless otherwise specified.)<br>——————————— Characteristic   Symbol  Min  Typ Max  Unit  Test Conditions<br>nD Reverse Standoff Voltage  nS VRWM —  IS (ROS —  (OO 5.5  (OO V  (OO —<br>Channel Leakage Current (Note 6)  IR —  —  100  nA VR = 5V, Any I/O to GND<br>Reverse breakdown voltage  VBR 6.0  —  —  V IR = 1mA<br>es Clamping Voltage, Positive Transients (Note 7)  VC —  10  12  V  IPP = 1A, tp = 8/20μs<br>—  0.5  —  VR = 0V, f = 1MHz, Any I/O to<br>GND<br>Channel Input Capacitance (Note 8)  CT pF<br>—  0.4  0.65  VR = 2.5V, f = 1MHz, Any I/O to<br>eeFf — GND  ee<br>Pf Dynamic Resistance  RDYN —  0.9  —  Ω  IPP = 1A, tp = 8/20μs<br>Notes:  5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at<br>    http://www.diodes.com.<br>6. Short duration pulse test used to minimize self-heating effect.<br>7. Clamping voltage value is based on an 8x20µs peak pulse current (Ipp) waveform.<br>8. Measured from any I/O to GND.<br>9. For information on the impact of Diodes' USB 2.0 compatible ESD protectors on signal integrity including eye diagram plots, please refer to AN77 at the<br>    following URL: http://www.diodes.com/destools/appnote_dnote.html.<br>250 100<br>225<br>Note 5<br>200 MAS) FN<br>75<br>175<br>PR CENCE<br>150<br>100125 |TLTT EPNILE INC EL 50 tT~ETIN [EXPEL] | LLLT<br>75<br>i | AE TO 25 | E} AE LI<br>50<br>Ne Seen Cen<br>25<br>TTA 0 | EtLINLS<br>0 0 25 50 75 100 125 150 175 200<br>0 25 50 75 100 125 150 175<br>TA, AMBIENT TEMPERATURE (°C) TA, AMBIENT TEMPERATURE (°C)Figure 2 Pulse Derating Curve<br>Figure 1 Power Derating Curve<br>, POWER DISSIPATION (mW)D PEAK PULSE DERATING % OF PEAK POWER OR CURRENT<br>P<br>**----- End of picture text -----**<br>


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D5V0F2U3LP08 

May 2014 © Diodes Incorporated 

Document number: DS36615 Rev. 1 - 2 

**D5V0F2U3LP08** 

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100 Peak Value Ipp<br>Half Value Ipp/2<br>50<br>PNT<br>8x20 Waveform SS<br>as defined by R.E.A.<br>0<br>0 20 40 60<br>t, TIME (μs)<br>Figure 3 Pulse Waveform<br>100<br>======<br>—————-<br>Ff TA = 150 ° C aa<br>y,<br>10 TA = 125°C a<br>PO<br>ff TA = 85 SSA ° C<br>ff Oe TA = 25°C<br>TA = -55°C<br>/ ,<br>1 VA<br>/<br>0 1 2 3 4 5 5.5<br>VR, REVERSE VOLTAGE (V)<br>Figure 5 Typical Reverse Characteristics<br>)pp<br>, PEAK PULSE CURRENT (%I<br>P<br>IP<br>, LEAKAGE  CURRENT (nA)<br>IR<br>**----- End of picture text -----**<br>


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1000 oe<br>100<br>T A  = 150°C<br>10 TA = 125°C<br>1 TA = 85 ° C<br>TA = 25°C<br>TA = -55°C<br>0.1 =f<br>fp ffs feo<br>0.01 | | SS f Ff [fF |<br>300 400 500 600 700 800 900 1000 1100<br>VF, INSTANTANEOUS FORWARD VOLTAGE (mV)<br>Figure 4 Typical Forward Characteristics<br>0.6<br>0.55 f = 1MHz<br>Note 8Note 8<br>0.5 -EEEEEEE<br>SeeTE<br>0.45<br>a ee<br>0.4<br>Pepi<br>PSS<br>0.35<br>0.3<br>BEER EERE<br>0.25 i<br>0.2 eee<br>0.15<br>iOO<br>0.1 aes<br>0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5<br>VR, REVERSE VOLTAGE (V)<br>Figure 6  Total Capacitance vs. Reverse Voltage<br>, INSTANTANEOUS FORWARD CURRENT (mA)<br>IF<br>, TOTAL CAPACITANCE (pF)<br>T<br>C<br>**----- End of picture text -----**<br>


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D5V0F2U3LP08 Document number: DS36615 Rev. 1 - 2 

May 2014 © Diodes Incorporated 

**D5V0F2U3LP08** 

## **Package Outline Dimensions** 

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. 

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A3<br>A A1 X2-DFN0806-3<br>Dim  Min  Max  Typ<br>A  0.375  0.40  0.39<br>Seating Plane<br>A1  0 0.05 0.02<br>e A3 —  —  0.10<br>b  0.10  0.20  0.15<br>D D  0.55 0.65 0.60<br>e D1  0.35 0.45 0.40<br>E  0.75  0.85  0.80<br>“<br>S555 E1  0.20 0.30 0.25<br>e —  —  0.35<br>L (2x)<br>K  —  —  0.20<br>L  0.20 0.30 0.25<br>K b (2x) All Dimensions in mm<br>E<br>E1<br>Pin#1<br>R0.075<br>D1<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. 

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Value<br>Dimensions<br>(in mm)<br>C  0.350<br>X  0.200<br>X1  0.450<br>X2  0.550<br>Y  0.375<br>Y1  0.475<br>Y2  1.000<br>**----- End of picture text -----**<br>


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D5V0F2U3LP08 Document number: DS36615 Rev. 1 - 2 

May 2014 © Diodes Incorporated 

**D5V0F2U3LP08** 

**IMPORTANT NOTICE** DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending.  Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference.  Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2014, Diodes Incorporated 

**www.diodes.com** 

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D5V0F2U3LP08 Document number: DS36615 Rev. 1 - 2 

May 2014 © Diodes Incorporated