# Bipolar (BJT) Single Transistor, NPN, 30 V, 3 A, 10 W, TO-126, Through Hole
**URL**: https://novapart.co/products/CSD882/bipolar-bjt-single-transistor-npn-30-v-3-a-10-w-to
**SKU**: CSD882
**Manufacturer**: MULTICOMP PRO
**Price**: €0.1110
**Stock**: 1000+
**Lead Time**: 127 days (indicative)
## Specifications
| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | Multicomp Pro Bipolar Transistor NPN |
| Qualification | - |
| Power Dissipation | 10W |
| Transistor Mounting | Through Hole |
| Transistor Polarity | NPN |
| Transition Frequency | 90MHz |
| Transistor Case Style | TO-126 |
| Dc Current Gain Hfe Min | 60hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 3A |
| Collector Emitter Voltage Max | 30V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:4343325/)
## **Single Bipolar Transistor**
## **Discription**
- The CSD882 is NPN Silicone Transistor suited for the Output Stage of 3 watt audio amplifier, Voltage regulator, DC-DC converter and relay driver.
## **Features:**
1. Low Saturation Voltage:
- VCE(sat) ≤0.5V (@ IC = 2A, IB = 0.2A)
2. Excellent hFE linearity and high hFE.
- hFE: 60 to 400 (@ VCE = 2V, IC = 1A
3. Less Cramping space required due to small and think package and reducing the trouble for attachment to a radiator no insulator bushing required
4. This product is available in AEC-Q101 Qualified and PPAP Capable also.
Note: For AEC-Q101 qualified products, please use suffix -AQ in the part number while ordering.
## **Absolute Maximum Ratings (Ta = 25°C Unless otherwise specified)**
|**Parameter**|**Parameter**|**Symbol**|**Value**|**Unit**|
|---|---|---|---|---|
|Maximum Temperature storage Temperature||Tstg|-55 to +150|°C|
|Maximum Temperature Junction Temperature||Tj|150||
|Maximum Total power Dissipation|Ta = 25°C|Ptot|1|W|
||Tc = 25°C||10||
|Collector to Base Voltage||Ptot|40|V|
|Collector to Emitter Voltage||VCEO|30||
|Emitter to Base Voltage||VEBO|5||
|Collector Current(DC)||IC(DC)|3|A|
|Collector Current(Pulse)||IC(Pulse)1|7||
## **Electrical Characteristics at (Ta = 25°C Unless otherwise specified)**
|**Parameter**
~~rs~~|**Symbol**
~~eG~~
~~Qe~~|**Test Condition**
~~eG~~
~~Qe~~|**Min.**
~~eG~~|**TYP.**|**MAX.**|**Unit**|
|---|---|---|---|---|---|---|
|DC Current Gain
~~rs ~~
~~es~~
~~es~~|hFE1
~~eG~~
~~es~~
~~Qe~~
~~Qe~~
|VCE= 2.0V, IC= 20mA2
~~eG~~
~~es~~
~~Qe~~
~~Qe~~|30
~~eG~~
~~es~~|150
~~es~~|--
~~es~~|~~es~~|
|DC Current Gain
~~es~~
~~es~~
~~es~~|hFE2
~~Qe~~
~~es~~
~~Qe~~
~~ee~~|VCE= 2.0V, IC= 1.0A2
~~Qe~~
~~es~~
~~Qe~~|60
~~es~~|160
~~es~~
~~—~~|400
~~es~~|~~es~~|
|Gain Bandwidth Product
~~es~~
~~es~~|fT
~~Qe~~
~~ee~~|VCE= 5.0V, IC= 0.1A
~~Qe~~|--|90
~~—~~
~~||~~|--
~~||~~
~~||~~|MHz
~~||~~|
|Output Capacitance
~~es ~~
~~es~~|Cob
~~Qe~~
~~ee~~|VCB= 10V, IE= 0, f = MHz
~~Qe~~||45
~~—~~
~~||~~||pF
~~||~~|
|Collector Cutoff Current
~~es~~
~~**e**s~~|ICBO
~~ee~~
~~ee~~|VCB= 30V, IE= 0,||--
~~—~~
~~||~~|1
~~||~~
~~||~~
~~—~~|μA
~~||~~
~~|~~|
|Emitter Cutoff Current
~~es~~
~~**e**s~~|ICBO
~~es~~
~~ee~~|VEB= 3.0V, IC= 0
~~es~~|||||
|Collector Saturation Voltage
~~**e**s~~
~~e es~~|VCE(sat)
~~ee~~
~~es~~|IC= 2.0A, IB= 0.2A2|0.3||0.5
~~—~~
~~||~~|V
~~|~~|
|Base Saturation Voltage
~~**e**s~~
~~e es~~|VBE(sat)
~~ee~~
~~es~~|IC= 2.0A, IB= 0.2A2|1||2
~~— ~~
~~||~~||
Newark.com/multicomp-pro Farnell.com/multicomp-pro sg.element14.com/b/multicomp-pro
23/02/24 V1.0
Page <1>
## **Single Bipolar Transistor**
## **FE Classification of h**
|**Rank**|**R**|**Q**|**P**|**E**|
|---|---|---|---|---|
|Range|60 to 120|100 to 200|160 to 320|200 to 400|
Test Conditions: VCE = 2.0V, IC = 1.0A Note:
1. Pulse test: PW ≤300μs, duty cycle=2%
2. Pulse test: PW ≤350μs, duty cycle=2%
## **Typical Characteristics Curves**
Newark.com/multicomp-pro Farnell.com/multicomp-pro sg.element14.com/b/multicomp-pro
23/02/24
Page <2>
V1.0
## **Single Bipolar Transistor**
## **PIN CONFIGURATION**
1. Emitter
2. Collector
3. Base
**==> picture [98 x 8] intentionally omitted <==**
**----- Start of picture text -----**
Dimensions : Millimetres
**----- End of picture text -----**
Newark.com/multicomp-pro Farnell.com/multicomp-pro sg.element14.com/b/multicomp-pro
Page <3> 23/02/24 V1.0
## **Single Bipolar Transistor**
## **Recommended Reflow Solder Profiles**
The recommended reflow solder profiles for Pb and Pb-free devices are shown below.
Figure 1 shows the recommended solder profile for devices that have Pb-free terminal plating, and where a Pb-free solder is used.
Figure 2 shows the recommended solder profile for devices with Pb-free terminal plating used with leaded solder, or for devices with leaded terminal plating used with a leaded solder.
**Reflow profiles in tabular form**
|**Profile Feature**|**Sn-Pb System**|**Pb-Free System**|
|---|---|---|
|Average Ramp-UpRate|~3°C/second|~3°C/second|
|Preheat
– Temperature Range
– Time|150-170°C
60-180 seconds|150-200°C
60-180 seconds|
|Time maintained above:
– Temperature
– Time|200°C
30-50 seconds|217°C
60-150 seconds|
|Peak Temperature|235°C|260°C max.|
|Time within +0 -5°C of actual Peak|10 seconds|40 seconds|
|Ramp-Down Rate|3°C/second max.|6°C/second max.|
Newark.com/multicomp-pro Farnell.com/multicomp-pro sg.element14.com/b/multicomp-pro
23/02/24 V1.0
Page <4>
## **Single Bipolar Transistor**
## **Recommended Wave Solder Profiles**
The Recommended solder Profile For Devices with Pb-free
The Recommended solder Profile For Devices
## **Wave Profiles in Tabular Form**
|**Wave Profiles in Tabular Form**|||
|---|---|---|
|**Profile Feature**|**Sn-Pb System**|**Pb-Free System**|
|Average Ramp-UpRate|~200°C/second|~200°C/second|
|Heatingrate during preheat|Typical 1-2, Max 4°C/sec|Typical 1-2, Max 4°C/Sec|
|Finalpreheat Temperature|Within 125°C of Solder Temp|Within 125°C of Solder Temp|
|Peak Temperature|235°C|260°C max.|
|Time within +0 -5°C of actual Peak|10 seconds|10 seconds|
|Ramp-Down Rate|5°C/second max.|5°C/second max.|
## **Part Number Table**
## Dimensions : Millimetres
|**Part Number Table**||
|---|---|
|**Description**|**Part Number**|
|Single Bipolar Transistor, NPN, 30V, 3000mA, 10W, TO-126|CSD882|
**Important Notice :** This data sheet and its contents (the “Information”) belong to the members of the AVNET group of companies (the “Group”) or are licensed to it. No licence is granted for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group’s liability for death or personal injury resulting from its negligence. Multicomp Pro is the registered trademark of Premier Farnell Limited 2019.
Newark.com/multicomp-pro
Farnell.com/multicomp-pro sg.element14.com/b/multicomp-pro
23/02/24 V1.0
Page <5>
## Links
- [View this product on Novapart](https://novapart.co/products/CSD882/bipolar-bjt-single-transistor-npn-30-v-3-a-10-w-to)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/multicomp-pro/csd882/transistor-npn-30v-3a-to-126-3/dp/4343325)
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