# Thyristor Module, Single, 120 A, 1.2 kV

![Product image](https://novapart.co/image/farnell:2782962/)

**URL**: https://novapart.co/products/CS35-12IO4/thyristor-module-single-120-a-12-kv
**SKU**: CS35-12IO4
**Manufacturer**: IXYS SEMICONDUCTOR
**Category**: Semiconductors - Discretes || Thyristors || Thyristors - SCR Modules
**Price**: €21.6800
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| Product Range | CS 35 |
| Scr Module Type | Single SCR |
| Thyristor Mounting | Stud Mount |
| Holding Current Max | 80mA |
| On State Rms Current | 120A |
| Thyristor Case Style | TO-208AC |
| Average Forward Current | 69A |
| Average On State Current | 69A |
| Gate Trigger Current Max | 100mA |
| Gate Trigger Voltage Max | 1.5V |
| Operating Temperature Max | 125°C |
| Repetitive Peak Reverse Voltage | 1.2kV |
| Peak Non Repetitive Surge Current | 1.2kA |
| Peak Repetitive Off State Voltage | 1.2kV |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2782962/)

**CS 35** 

## **Phase Control Thyristors VRRM = 800-1400 V I = 120 A T(RMS) I = 69 A T(AV)M** 

|**VRSM**|**VRRM**|**Type**|
|---|---|---|
|**VDSM**|**VDRM**||
|**V**|**V**||
|**900**|**800**|**CS 35-08io4**|
|**1300**|**1200**|**CS 35-12io4**|
|**1500**|**1400**|**CS 35-14io4**|



**==> picture [241 x 111] intentionally omitted <==**

**----- Start of picture text -----**<br>
TO-208AC 2<br>1 2 (TO-65) 3<br>3 ty<br>1 ¼"-28 UNF-2 A<br>1 = Anode, 2 = Cathode, 3 = Gate<br>**----- End of picture text -----**<br>


|**Symbol**|**Test Conditions**||**Maximum Ratings**|**Maximum Ratings**|**Features**|
|---|---|---|---|---|---|
|**IT(RMS)**<br>**IT(AV)M**|TVJ<br>= TVJM<br>Tcase = 85 C; 180 sine<br>Tcase = 80 C; 180 sine||120<br>63<br>69|A<br>A<br>A|G Thyristor for line frequencies<br>G International standard package<br>JEDEC TO-208AC<br>G Planar glassivated chip|
|**ITSM**|TVJ= 45 C;<br>VR= 0|t = 10 ms (50 Hz), sine<br>t = 8.3 ms (60 Hz), sine|1200<br>1340|A<br>A|G Long-term stability of blocking<br>currents and voltages|
||TVJ= TVJM<br>VR= 0|t = 10 ms (50 Hz), sine<br>t = 8.3 ms (60 Hz), sine|1100<br>1250|A<br>A|**Applications**<br>G Motor control|
|**I2t**|TVJ= 45 C<br>VR= 0|t = 10 ms (50 Hz), sine<br>t = 8.3 ms (60 Hz), sine|7200<br>7550|A2s<br>A2s|G Power converter<br>G AC power controller|
||TVJ= TVJM<br>VR= 0|t = 10 ms (50 Hz), sine<br>t = 8.3 ms (60 Hz), sine|6050<br>6500|A2s<br>A2s|**Advantages**<br>G Space and weight savings|
|**(di/dt)cr**|TVJ= TVJM<br>f = 50 Hz, tP=200 s<br>VD= 2/3 VDRM<br>u|repetitive, IT= 150 A|150|A/ s<br>u|G Simple mounting<br>G Improved temperature and power<br>cycling|
||IG= 0.5 A|non repetitive, IT= IT(AV)M|400|A/ s<br>u||
|i|diG/dt = 0.5 A/ s|||||
|**(dv/dt)cr**|TVJ= TVJM;<br>VDR= 2/3 VDRM<br>RGK= ; method 1 (linear voltage rise)<br>oe)||1000|V/ s<br>u|**Dimensions in mm (1 mm = 0.0394")**|
|**PGM**|TVJ= TVJM<br>IT= IT(AV)M|tP=<br>30 s<br>tP= 500 s|10<br>5|W<br>W|3.|
|**PG(AV)**<br>**VRGM**<br>**TVJ**<br>TS|||0.5<br>10<br>-40...+125|W<br>V<br>C<br><— <br>°|="<br>oo|
|**TVJM**<br>**Tstg**<br>**Md**<br>**Weight**|Mounting torque||125<br>-40...+125<br>2.5<br>22<br>20|C<br>C<br>Nm<br>lb.in.<br>g|iis CTT<br>a<br>ry<br>T_<br>Li’|



- G Thyristor for line frequencies 

- G International standard package JEDEC TO-208AC 

- G Planar glassivated chip 

- G Long-term stability of blocking currents and voltages 

- G Space and weight savings 

- G Improved temperature and power cycling 

## **Dimensions in mm (1 mm = 0.0394")** 

Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions 

1 - 3 

© 2000 IXYS All rights reserved 

**CS 35** 

|**Symbol**|**Test Conditions**<br>**Characteristic**|**Test Conditions**<br>**Characteristic**|**Test Conditions**<br>**Characteristic**|**Values**|
|---|---|---|---|---|
|**IR, ID**|TVJ = TVJM; VR= VRRM; VD= VDRM|�|10|mA|
|**VT**|IT<br>= 150 A; TVJ= 25�C|�|1.5|V|
|**VT0**|For power-loss calculations only (TVJ= 125�C)||0.85|V|
|**rT**|||3.5|m�|
|**VGT**|VD= 6 V;<br>TVJ= 25�C|�|1.5|V|
||TVJ= -40�C|�|1.9|V|
|**IGT**|VD= 6 V;<br>TVJ= 25�C|�|100|mA|
||TVJ= -40�C|�|200|mA|
|**VGD**|TVJ= TVJM;<br>VD= 2/3 VDRM|�|0.2|V|
|**IGD**||�|1|mA|
|**IL**|TVJ= 25�C; tP= 30�s|�|100|mA|
||IG= 0.1 A; diG/dt = 0.1 A/�s||||
|**IH**|TVJ= 25�C; VD= 6 V; RGK=�|�|80|mA|
|**tgd**|TVJ= 25�C; VD= 1/2 VDRM|�|2|�s|
||IG= 0.1 A; diG/dt = 0.1 A/�s||||
|**tq**|TVJ= TVJM; IT= 50 A, tP= 200�s; di/dt = -10 A/�s|typ.|100|�s|
||VR= 100 V; dv/dt = 10 V/�s; VD= 2/3 VDRM||||
|**RthJC**|DC current||0.4|K/W|
|**RthJH**|DC current||0.6|K/W|
|**dS**|Creepage distance on surface||1.7|mm|
|**dA**|Strike distance through air||1.7|mm|
|**a**|Max. acceleration, 50 Hz||50|m/s2|



**==> picture [333 x 233] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 500<br>V86 2: P1: PG(AV)GM= 5 W; t= 0.5 WG = 500  � s A typ. lim.<br>4 3: PGM= 10 W; tG = 30  � s 400 TTVJVJ=   25°C= 125°C<br>VG 2 3 IT<br>2<br>1 300<br>1 C<br>0.8<br>0.6 B 200<br>IGD: TVJ= -40°C<br>0.4 IGD: TVJ= 0°C<br>A IGD: TVJ= 25°C<br>100<br>0.2<br>IGD: TVJ=  25°C<br>IGD: TVJ=125°C 2    4 6 8<br>0.1 0<br>10 [0] 10 [1] 10 [2] 10 [3] mA 10 [4] 0 1 2 3 V 4<br>IG VT<br>Fig. 1 Gate trigger range Fig. 2  On-state characteristics<br>Triggering:<br>A = no; B = possible, C = safe<br>**----- End of picture text -----**<br>


© 2000 IXYS All rights reserved 

2 - 3 

**CS 35** 

**==> picture [520 x 425] intentionally omitted <==**

**----- Start of picture text -----**<br>
1200 10 [4] 150<br>A A [2] s VR = 0 V DC<br>1000 A 180° sin<br>120°<br>ITSM 50Hz, 80%VRRM I [2] t 6 TVJ = 45°C IT(AV)M 60°30°<br>800 TVJ = 45°C 4 TVJ = 125°C 100<br>TVJ = 125°C<br>600<br>400 50<br>2<br>200<br>0 10 [3] 0<br>10 [-3] 10 [-2] 10 [-1] 10 [0] s 10 [1] 1 2 3 4 5 6 7 ms8 910 0 50 100 °C 150<br>t t Tcase<br>Fig. 3 Surge overload current Fig. 4 I [2] t versus time (1-10 ms) Fig. 5 Maximum forward current at<br>ITSM: crest value, t: duration case temperature<br>200<br>W RthJA :<br>0.9 K/W<br>150<br>1.3 K/W<br>PT<br>1.6 K/W<br>3.3 K/W<br>100<br>DC<br>180° sin<br>120°<br>60°<br>30°<br>50<br>0<br>0 20 40 60 80 100 120A 1400 50 100 °C 150<br>IT(AV)M Tamb<br>**----- End of picture text -----**<br>


Fig. 6 Power dissipation versus on-state current and ambient temperature 

**==> picture [513 x 206] intentionally omitted <==**

**----- Start of picture text -----**<br>
RthJH for various conduction angles d:<br>0.8<br>30° d RthJH (K/W)<br>K/W 60°<br>120° DC 0.6<br>180° 180 � 0.65<br>0.6 DC 120 � 0.677<br>ZthJH 6030 �� 0.7250.775<br>0.4<br>Constants for ZthJH calculation:<br>0.2 i Rthi (K/W) ti (s)<br>1 0.01 0.001<br>2 0.09 0.013<br>3 0.30 0.3<br>0.0 4 0.20 0.9<br>10 [-3] 10 [-2] 10 [-1] 10 [0] 10 [1] s 10 [2]<br>t<br>**----- End of picture text -----**<br>


Fig. 7 Transient thermal impedance junction to heatsink 

3 - 3 

© 2000 IXYS All rights reserved 



## Links

- [View this product on Novapart](https://novapart.co/products/CS35-12IO4/thyristor-module-single-120-a-12-kv)
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- [Supplier page](https://es.farnell.com/en-ES/ixys-semiconductor/cs35-12io4/thyristor-module-1-2kv-69a-to/dp/2782962)
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