# Power MOSFET, N Channel, 35 V, 3 A, 0.08 ohm, CPH, Surface Mount
**URL**: https://novapart.co/products/CPH3455-TL-W./power-mosfet-n-channel-35-v-3-a-008-ohm-cph
**SKU**: CPH3455-TL-W.
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.2810
**Stock**: 10+
## Specifications
| Parameter | Value |
|---|---|
| Channel Type | N Channel |
| Power Dissipation | 1W |
| Drain Source On State Resistance | 0.08ohm |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:2508370RL/)
**DATA SHEET www.onsemi.com**
## MOSFET - Power, Single N-Channel
## 35 V, 104 m **�** , 3 A
## CPH3455
## **Description**
This Power MOSFET is produced using **onsemi** ’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements.
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V(BR)DSS RDS(ON) MAX ID MAX
35 V 104 m � @ 10 V 3 A
173 m � @ 4.5 V
208 m � @ 4 V
CPH3
CASE 318BA
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## **Features**
- Low On−Resistance
- 4V Drive
- Pb−Free, Halogen Free and RoHS Compliance
## **Typical Applications**
- Load Switch
- Motor Drive
## **MAXIMUM RATINGS** (TJ = 25 ° C unless otherwise noted) (Note 1)
|**MAXIMUM RATINGS**(TJ= 25°C unless|otherwise n|oted) (Note 1)||
|---|---|---|---|
|**Parameter**|**Symbol**|**Value**|**Unit**|
|Drain−to−Source Voltage|VDSS|35|V|
|Gate−to−Source Voltage|VGSS|±20|V|
|Drain Current (DC)|ID|3|A|
|Drain Current (Pulse)
PW≤10�s, duty cycle≤1%|IDP|12|A|
|Power Dissipation
When mounted on ceramic substrate
(900 mm2x 0.8 mm)|PD|1|W|
|Junction Temperature|Tj|150|°C|
|Storage Temperature|Tstg|−55 to +150|°C|
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
1. This product is designed to “ESD immunity <200 V*”, so please take care when handling.
## **ELECTRICAL CONNECTION**
**N−Channel**
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3
1
1: Gate
2: Source
3: Drain
2
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## **MARKING DIAGRAM**
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LM
Y
MW
LM = Specific Device Code
Y = Year
M = Month
W = Week
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*Machine Model
## **THERMAL RESISTANCE MAXIMUM RATINGS**
|**Parameter**|**Symbol**|**Value**|**Unit**|
|---|---|---|---|
|Junction−to−Ambient
When mounted on ceramic substrate
(900 mm2x 0.8 mm)|R�JA|125|°C/W|
## **ORDERING INFORMATION**
See detailed ordering, marking and shipping information in the package dimensions section on page 5 of this data sheet.
Publication Order Number:
**1**
© Semiconductor Components Industries, LLC, 2015 **September, 2022 − Rev. 4**
**CPH3455/D**
**CPH3455**
**ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise specified)
|**Parameter**|**Symbol**|**Test Condition**|**Min**|**Typ**|**Max**|**Unit**|
|---|---|---|---|---|---|---|
|Drain to Source Breakdown Voltage|V(BR)DSS|ID= 1 mA, VGS= 0 V|35|−|−|V|
|Zero–Gate Voltage Drain Current|IDSS|VDS= 35 V, VGS= 0 V|−|−|1|�A|
|Gate to Source Leakage Current|IGSS|VGS=±16 V, VDS= 0 V|−||±10|�A|
|Gate Threshold Voltage|VGS(th)|VDS= 10 V, ID= 1 mA|1.2|−|2.6|V|
|Forward Transconductance|gFS|VDS= 10 V, ID= 1.5 A|−|1.7|−|S|
|Static Drain to Source On−State
Resistance|RDS(on)1|ID= 1.5 A, VGS= 10 V|−|80|104|m�|
||RDS(on)2|ID= 0.75 A, VGS= 4.5 V|−|123|173|m�|
||RDS(on)3|ID= 0.75 A, VGS= 4 V|−|148|208|m�|
|Input Capacitance|CiSS|VDS= 20 V, f = 1 MHz|−|186|−|pF|
|Output Capacitance|CoSS||−|36|−||
|Reverse Transfer Capacitance|CrSS||−|22|−||
|Turn−On Delay Time|td(on)|See specified Test Circuit|−|4.2|−|ns|
|Rise Time|tr||−|4.7|−||
|Turn−Off Delay Time|td(off)||−|15|−||
|Fall Time|tf||−|5.7|−||
|Total Gate Charge|Qg|VDS= 20 V, VGS= 10 V, ID= 3 A|−|4|−|nC|
|Gate−to−Source Charge|Qgs||−|0.9|−||
|Gate to Drain “Miller” Charge|Qgd||−|0.7|−||
|Forward Diode Voltage|VSD|IS= 3 A, VGS= 0 V|−|0.86|1.2|V|
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
## **SWITCHING TIME TEST CIRCUIT**
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VDD = 15 V
VIN
10 V ID = 1.5 A
0 V RL = 10 �
VIN D VOUT
PW = 10 � s
D.C. ≤ 1%
G
PG 50 � s
S
CPH3455
**----- End of picture text -----**
**Figure 1. Switching Time Test Circuit**
**www.onsemi.com**
**2**
**CPH3455**
**TYPICAL CHARACTERISTICS**
**==> picture [485 x 618] intentionally omitted <==**
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3.0 8.0 V TA = −25 ° C 4.0 VDS = 10 V
10.0 V 3.5
2.5
16.0 V 4.0 V 3.0
2.0 WY 4.5 V | oye
2.5
1.5 |FTfe 6.0 V ER 2.0 eeeeee) −25 ° C
1.5
1.0 V GS = 3.0 V
YoWf 1.0 pfse
0.5 Vase 0.5 Poff TA = 75 ° C 25 ° C
0 ZePp Lee LAe
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
VDS, Drain−to−Source Voltage (V) VGS, Gate−to−Source Voltage (V)
Figure 2. ID − VDS Figure 3. ID − VGS
300270 TILL TA = 25 ° C 300270 VGS = 0 V
a 240 fe 240 EL V GS = 4.5 V Coo
210 ee | 210 aa ID = 0.75 A aa
180 FAP 1.5 A eee 180 V GS = 4 V ss
150 Sh OO 150 ID = 0.75 A a
120 120
ee, ee ee L Aas
90 I D = 0.75 A 90 VGS = 10 V
60 eee 60 ae ID = 1.5 A
30 SEES 30 cee
0 Ss a 0 Oe
0 2 4 6 8 10 12 14 16 18 −60 −40 −20 0 20 40 60 80 100 120 140 160
VGS, Gate−to−Source Voltage (V) TA, Ambient Temperature ( C)
Figure 4. RDS(on) − VGS, Figure 5. RDS(on) − TA
10 10
7 V DS = 10 V 57 VGS = 0 V
5 EEE EE 3 a
2
3 TA = 75 ° C
2 ptt tt} T tt A = −25 tt ° C 1.07 PS Lfoe
5
1.07 pee 75 ° C 23 of 25 ° C ff −25 ° C
5 e eesa 25 ° C ae 0.17 p T ALE fF
3 ee eee 5 pf
2 3
gor 2
0.1 A | 0.01 eyay ey
0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 0 0.2 0.4 0.6 0.8 1.0 1.2
ID, Drain Current (A) VSD, Forward Diode Voltage (V)
, Drain Current (A) , Drain Current (A)
ID ID
(m m
, Static Drain to Source
, Static Drain to Source
DS(on) On−State Resistance DS(o) On−State Resistance
R R
Source Current (A)
IS
Forward Tranconductance (S)
FS
g
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**Figure 6. gFS − ID**
**Figure 7. IS − VSD**
**www.onsemi.com**
**3**
**CPH3455**
## **TYPICAL CHARACTERISTICS** (continued)
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100 1000
7 VDD = 15 V 7 f = 1 MHz
5 VGS = 10 V 5
3 3
2 Ciss
t d(off) 2
10 tr 100
7 t f 7
5 td(on) 5 Coss
3 3
2 2 C rss
1.0 10
0.1 2 3 5 7 1.0 2 3 5 7 10 0 5 10 15 20 25 30 35
ID, Drain Current (A) VDS, Drain−to−Source Voltage (V)
Figure 8. Time (SW) − ID Figure 9. VDS − Ciss, Coss, Crss
10 100
VGS = 20 V 57
9 ID = 3 A
8 2 [3] I DP = 12 A (PW ≤ � s)
10
7 57 ID = 3 A 1 ms 100 � s
6 3 10 ms
2
5 1.0 100 ms
7
4 5 Operation in this area
3 2 [3] is limited by RDS(on)
2 0.15 [7] Single PulseTA = 25 ° C DC operation TA = 25 ° C
1 When mounted on ceramic substrate
2 [3]
0 0.01 (900 mm [2] x 0.8 mm)
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100
Qg, Total Gate Charge (nC) VDS, Drain to Source Voltage (V)
Figure 10. VGS − Qg Figure 11. S O A
1.4
When mounted on ceramic substrate
1.2
(900 mm [2] x 0.8 mm)
1.0
0.8
0.6
0.4
0.2
0
0 20 40 60 80 100 120 140 160
TA, Ambient Temperature ( � C)
− (pF)
rss
, C
oss
, C
iss
C
Switching Time, SW Time (ns)
, Drain Current (A)
ID
, Gate to Source Voltage (V)
GS
V
, Power Dissipation (W)
D
P
**----- End of picture text -----**
**Figure 12. PD − TA**
**www.onsemi.com**
**4**
**CPH3455**
## **TYPICAL CHARACTERISTICS** (continued)
**==> picture [492 x 183] intentionally omitted <==**
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1000
7
5
3
2
100 Duty Cycle = 0.5
7
5
3 0.2
2
0.1
10
7 0.05
5
3 0.02
2
0.01
1.0
7
5
When mounted on ceramic substrate
23 Single Pulse (900 mm [2] x 0.8 mm)
0.1
0.000001 2 3 5 7 0.00001 2 3 5 7 0.0001 2 3 5 7 0.001 2 3 5 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10
C/W)
�
Thermal Resistance (
JA,
�
R
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## **Pt Pulse Time (s)**
**Figure 13. R � JA − Pulse Time**
## **DEVICE ORDERING INFORMATION**
|**Device**|**Marking**|**Package**|**Shipping**†|
|---|---|---|---|
|CPH3455−TL−H|LM|CPH3
SC−59, SOT−23, TO−236
(Pb−Free / Halogen Free)|3000 / Tape & Reel|
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
*Note on usage : Since the CPH3455 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects.
**www.onsemi.com**
**5**
MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS**
**CPH3** CASE 318BA ISSUE O
DATE 30 NOV 2011
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Electronic versions are uncontrolled except when accessed directly from the Document Repository.
DOCUMENT NUMBER: 98AON65437E Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DESCRIPTION: CPH3 PAGE 1 OF 1
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**onsemi** and are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others.
www.onsemi.com
© Semiconductor Components Industries, LLC, 2011
**onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** ’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
## **ADDITIONAL INFORMATION**
**TECHNICAL PUBLICATIONS** : **ONLINE SUPPORT** : www.onsemi.com/support **Technical Library:** www.onsemi.com/design/resources/technical−documentation **For additional information, please contact your local Sales Representative at onsemi Website:** www.onsemi.com www.onsemi.com/support/sales
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## Links
- [View this product on Novapart](https://novapart.co/products/CPH3455-TL-W./power-mosfet-n-channel-35-v-3-a-008-ohm-cph)
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- [Supplier page](https://es.farnell.com/en-ES/on-semiconductor/cph3455-tl-w/mosfet-n-ch-35v-3a-cph-3/dp/2508370RL)
---
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