# Power MOSFET, N Channel, 250 V, 4 ohm, SOT-89, Surface Mount

![Product image](https://novapart.co/image/farnell:3995880/)

**URL**: https://novapart.co/products/CPC3703CTR/power-mosfet-n-channel-250-v-4-ohm-sot-89-surface
**SKU**: CPC3703CTR
**Manufacturer**: LITTELFUSE
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.4190
**Stock**: 10+
**Lead Time**: 155 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | To Be Advised |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 1.1W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 0V |
| Transistor Case Style | SOT-89 |
| Drain Source Voltage Vds | 250V |
| Operating Temperature Max | 125°C |
| Continuous Drain Current Id | - |
| Drain Source On State Resistance | 4ohm |
| Gate Source Threshold Voltage Max | - |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3995880/)

**CPC3703 250V N-Channel Depletion-Mode FET** 

INTEGRATED CIRCUITS DIVISION 

**V(BR)DSX / RDS(on) IDSS (min) Package V(BR)DGX (max)** 250V 4  360mA SOT-89 ~~ee~~ 

## **Features** 

- High Breakdown Voltage: 250V 

- Low On-Resistance: 4  max. at 25ºC 

- Low VGS(off) Voltage: -1.6 to -3.9V 

- Depletion Mode Device Offers Low RDS(on) 

- at Cold Temperatures 

- High Input Impedance 

- Small Package Size: SOT-89 

## **Applications** 

- Ignition Modules 

- Normally-On Switches 

- Solid State Relays 

- Converters 

- Telecommunications 

- Power Supply 

## **Description** 

The CPC3703 is an N-channel, depletion mode, field effect transistor (FET) that utilizes IXYS Integrated Circuits Division’s proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process. Our vertical DMOS process yields a robust device, with high input impedance, for use in high-power applications. The CPC3703 is a highly reliable device that has been used extensively in our Solid State Relays for industrial and telecommunications applications. 

This device excels in power applications that require low drain-source resistance, particularly in cold environments such as automotive ignition modules. The CPC3703 offers a low, 4  maximum, on-state resistance at 25ºC. 

The CPC3703 has a minimum breakdown voltage of 250V, and is available in an SOT-89 package. As with all MOS devices, the FET structure prevents thermal runaway and thermal-induced secondary breakdown. 

## **Ordering Information** 

## **Package Pinout** 

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D<br>G<br>D<br>S<br>**----- End of picture text -----**<br>


**Part # Description** CPC3703CTR N-Channel Depletion Mode FET, SOT-89 Pkg. ~~es~~ Tape and Reel (1000/Reel) **Circuit Symbol** D G S 

## **Circuit Symbol** 

## (SOT-89) 

DS-CPC3703-R07 

**1** 

**www.ixysic.com** 

INTEGRATED CIRCUITS DIVISION **CPC3703 Absolute Maximum Ratings @ 25ºC (Unless Otherwise Noted) Parameter Ratings Units** _Absolute Maximum Ratings are stress ratings. Stresses in_ Drain-to-Source Voltage 250 VP _excess of these ratings can cause permanent damage to the_ Gate-to-Source Voltage ±15 VP _device. Functional operation of the device at conditions beyond_ Pulsed Drain Current 600 mA _those indicated in the operational sections of this data sheet is_ Total Package Dissipation[1] 1.1 W _not implied._ Junction Temperature 125 ºC Operational Temperature, Ambient -55 to +125 ºC ~~—~~ Storage Temperature -55 to +125 ºC 1 Mounted on 1"x1"x0.062" FR4 board. **Electrical Characteristics @ 25ºC (Unless Otherwise Noted)** 

**==> picture [500 x 430] intentionally omitted <==**

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||||||||||
|---|---|---|---|---|---|---|---|---|
|Parameter|Symbol|Conditions|Min|Typ|Max|Units|
|Drain-to-Source Breakdown Voltage|V(BR)DSX|VGS= -5V, ID=100µA|250|-|-|V|
|Gate-to-Source Off Voltage|VGS(off)|VDS= 5V, ID=1mA|-1.6|-|-3.9|V|
|Change in VGS(off) with Temperature|dVGS(off) /dT|VDS= 5V, ID=1||A|-|-|4.5|mV/ºC|
|Gate Body Leakage Current|IGSS|VGS=±15V, VDS=0V|-|-|100|nA|
|Drain-to-Source Leakage Current|ID(off)|VGS= -5V, VVGS= -5V, VDS=200V, TDS=250VA=125ºC|--|--|11|mAµA|
|Saturated Drain-to-Source Current|IDSS|VGS= 0V, VDS=15V|360|-|-|mA|
|Static Drain-to-Source On-State Resistance|R|-|-|4||
|Change in RDS(on) with Temperature|dRDS(on) DS(on)/dT|VGS= 0V, ID=200mA|-|-|1.1|%/ºC|
|Forward Transconductance|GFS|ID= 100mA, VDS = 10V|225|-|-|m|
|Input Capacitance|CISS|VGS= -5V|327|350|
|Common Source Output Capacitance|COSS|VDS= 25V|-|51|65|pF|
|Reverse Transfer Capacitance|CRSS|f= 1MHz|27|35|
|Turn-On Delay Time|td(on)|VDD= 25V|23|35|
|Turn-Off DelaRise Time|y Time|td(off)tr|VGSID= 0V to -10V= 150mA|-|178|2025|ns|
|Fall Time|tf|R|= 50||70|80|
|gen|
|Source-Drain Diode Voltage Drop|VSD|VGS= -5V, ISD=150mA|-|0.6|1.8|V|
|Thermal Resistance (Junction to Ambient)|R||JA|-|-|90|-|ºC/W|
|Switching Waveform & Test Circuit|VDD|
|0V|RL|
|90%|PULSE|
|INPUT|GENERATOR|OUTPUT|
|-10V|10%|R|
|gen|
|ton|toff|
|td(on)|tf|td(off)|tr|
|D.U.T.|
|VDS|INPUT|
|90%|90%|
|OUTPUT|
|0V|a|10%|10%|

**----- End of picture text -----**<br>


R07 

**www.ixysic.com** 

**2** 

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**----- Start of picture text -----**<br>
call<br>INTEGRATED CIRCUITS DIVISION CPC3703<br>a<br>PERFORMANCE DATA (@25ºC Unless Otherwise Noted)*<br>Instantaneous Transfer Characteristics RDS(on) Vs. Temperature<br>Output Characteristics (VDS=5V, TA=TJ) (VGS=0V, ID=200mA)<br>1000900 VGS=-1.0 350 8<br>|—_{ | [ef 300 ar a a 7 re<br>800<br>700600 aeea VGS=-1.5 250200 65<br>500 Arr Og +125ºC Ee<br>400300 VGS=-2.0 150100 +25ºC 43<br>200 A -55ºC A<br>100 SS ee VGS=-2.5 50 ee 7 2<br>0 —_—_— 0 | Aa, | | 1 a a ee<br>0 1 2 3 4 5 6 -3.5 -3.0 -2.5 -2.0 -1.5 -50 0 50 100 150<br>VDS (V) VGS (V) Temperature (ºC)<br>VGS(off) Vs. Temperature Transconductance vs. Drain Current<br>(VDS=10V, ID=1mA) Maximum Rated Safe Operating Area (VDS=10V, TA=TJ)<br>-2.0 1 300<br>-55ºC<br>250 +25ºC<br>-2.5 +125ºC<br>0.1 200<br>-3.0 150<br>0.01 a eee 100 oF<br>-3.5<br>-4.0 0.001 eH ct 500 ALLEL ttl<br>-50 0 50 100 150 0.1 1 10 100 1000 0 10 20 30 40 50 60 70 80 90 100<br>Temperature (ºC) VDS (V) ID (mA)<br>Power Dissipation Capacitance vs. Drain-Source Voltage On-Resistance vs. Drain Current<br>vs. Ambient Temperature (VGS=-5V) (VGS=0V)<br>1.2 [ 600525 5.04.5<br>1.0<br>FRI TT TT 450 Lf 4.0 FT<br>0.8 CISS 3.5<br>PTONETE PE 375 Ree seesi CO 3.0 a AAT<br>0.6 300 2.5<br>222aNeee |<br>225 ———_—— === 2.0 sa<br>0.4 150 COSS 1.5<br>0.2 75 CRSS 1.00.5<br>0.0 F T tet LIN 0 SS ——_— 0 a<br>0 20 40 60 80 100 120 140 0 10 20 30 40 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0<br>Temperature (ºC) VDS (V) ID (A)<br>)<br> (<br> (mA)ID  (mA)ID RDS(on)<br> (V) )<br>GS(off)  (A)ID  (mFS<br>V G<br>)<br> (<br>DS(on)<br>R<br>Capacitance (pF)<br>Power Dissipation (W)<br>**----- End of picture text -----**<br>


*The Performance data shown in the graphs above is typical of device performance.  For guaranteed parameters not indicated in the written specifi cations, please contact our application department. 

R07 

**www.ixysic.com** 

**3** 

**CPC3703** 

INTEGRATED CIRCUITS DIVISION 

## **Manufacturing Information** 

## **Moisture Sensitivity** 

All plastic encapsulated semiconductor packages are susceptible to moisture ingression. IXYS Integrated Circuits Division classified all of its plastic encapsulated devices for moisture sensitivity according to 1) the latest version of the joint industry standard, **IPC/JEDEC J-STD-020** , in force at the time of product evaluation. We test all of our products to the maximum conditions set forth in the standard, and guarantee proper operation of our devices when handled according to the limitations and information in that standard as well as to any limitations set forth in the information or standards referenced below. 

Failure to adhere to the warnings or limitations as established by the listed specifications could result in reduced product performance, reduction of operable life, and/or reduction of overall reliability. 

This product carries a **Moisture Sensitivity Level (MSL) rating** as shown below, and should be handled according to the requirements of the latest version of the joint industry standard **IPC/JEDEC J-STD-033** . 

|**Device**<br>~~EE~~|**Moisture Sensitivity Level (MSL) Rating**<br>~~EE~~|
|---|---|
|CPC3703C<br>~~EE~~|MSL 1<br>~~EE~~|



## **ESD Sensitivity** 

This product is **ESD Sensitive** , and should be handled according to the industry standard **JESD-625** . 

## **Reflow Profile** 

This product has a maximum body temperature and time rating as shown below. All other guidelines of **J-STD-020** must be observed. 

**Device Maximum Temperature x Time** CPC3703C 260ºC for 30 seconds ~~a~~ 

## **Board Wash** 

IXYS Integrated Circuits Division recommends the use of no-clean flux formulations. However, board washing to remove flux residue is acceptable, and the use of a short drying bake may be necessary. Chlorine-based or Fluorine-based solvents or fluxes should not be used. Cleaning methods that employ ultrasonic energy should not be used. 

R07 

**www.ixysic.com** 

**4** 

**CPC3703** 

INTEGRATED CIRCUITS DIVISION 

## **Mechanical Dimensions** 

## **CPC3703C** 

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1.626 / 1.829 R 0.254 1.397 / 1.600 PCB Land Pattern<br>(0.064 / 0.072) (R 0.010) (0.055 / 0.063)<br>1.90<br>(0.075)<br>3.937 / 4.242 2.286 / 2.591 45º<br>(0.155 / 0.167) (0.090 / 0.102)<br>2.45 5.00<br>(0.096) (0.197)<br>Pin 1 1.40<br>(0.055) 50º<br>0.356 / 0.483 0.356 / 0.432 1.90<br>0.889 / 1.194 (0.014 / 0.019) (0.014 / 0.017) (0.074)<br>(0.035 / 0.047) 0.432 / 0.559<br>(0.017 / 0.022) 0.864 / 1.016 0.432 / 0.508<br>(0.034 / 0.040) (0.017 / 0.020) 0.60<br>4.394 / 4.597 (0.024)<br>(0.173 / 0.181) TYP 3<br>1.118 / 1.270 2.845 / 2.997<br>(0.044 / 0.050) 50º (0.112 / 0.118)<br>1.422 / 1.575<br>(0.056 / 0.062) Dimensions<br>2.921 / 3.073 mm MIN / mm MAX<br>= (0.115 / 0.121) rT (inches MIN / inches MAX) 7<br>CPC3703CTR Tape & Reel<br>177.8 Dia 2.00 ± 0.05<br>5.50 ± 0.05<br>(7.00 Dia) (0.079 ± 0.002) 1.75 ± 0.1<br>(0.217 ± 0.002)<br>4.00 ± 0.1 (0.069 ± 0.004)<br>(0.157 ± 0.004)<br>Top Cover<br>Tape Thickness<br>0.102 Max W=12.00 ± 0.3<br>(0.004 Max) (0.472 ± 0.012)<br>B0=4.60 ± 0.1<br>(0.181 ± 0.004)<br>K0=1.80 ± 0.1<br>(0.071 ± 0.004) A0=4.80 ± 0.1<br>(0.189 ± 0.004)<br>EmbossedCarrier Ht P=8.00 ± 0.1 [ay] [|]<br>an [f][l] a (0.315 ± 0.004) Dimensions<br>mm<br>Embossment (inches)<br>**----- End of picture text -----**<br>


## **For additional information please visit our website at: www.ixysic.com** 

IXYS Integrated Circuits Division makes no representations or warranties with respect to the accuracy or completeness of the contents of this publication and reserves the right to make changes to specifications and product descriptions at any time without notice.  Neither circuit patent licenses nor indemnity are expressed or implied.  Except as set forth in IXYS Integrated Circuits Division’s Standard Terms and Conditions of Sale, IXYS Integrated Circuits Division assumes no liability whatsoever, and disclaims any express or implied warranty, relating to its products including, but not limited to, the implied warranty of merchantability, fitness for a particular purpose, or infringement of any intellectual property right. 

The products described in this document are not designed, intended, authorized or warranted for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or where malfunction of IXYS Integrated Circuits Division’s product may result in direct physical harm, injury, or death to a person or severe property or environmental damage.  IXYS Integrated Circuits Division reserves the right to discontinue or make changes to its products at any time without notice. 

Specification:  DS-CPC3703-R07 ©Copyright 2014, IXYS Integrated Circuits Division All rights reserved.  Printed in USA. 

**5** 

8/1/2014 



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