# IGBT MODULE, 600V, 75A

![Product image](https://novapart.co/image/farnell:1185653/)

**URL**: https://novapart.co/products/CM75DU-12F/igbt-module-600v-75a
**SKU**: CM75DU-12F
**Manufacturer**: MITSUBISHI ELECTRIC
**Category**: Semiconductors - Discretes || IGBTs || IGBT Modules
**Price**: €43.0800
**Stock**: 10+

## Description

Transistor Polar; IGBT MODULE, 600V, 75A; Transistor Polarity:N Channel; DC Collector Current:75A; Collector Emitter Saturation Voltage Vce(on):600V; Power Dissipation Pd:290W; Collector Emitter V

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (17-Dec-2014) |
| Product Range | F Series |
| Igbt Technology | IGBT 5 [Trench Gate] |
| Igbt Termination | Stud |
| Power Dissipation | 290W |
| Igbt Configuration | Dual [Half Bridge] |
| Transistor Mounting | Panel |
| Dc Collector Current | 75A |
| Power Dissipation Pd | 290W |
| Transistor Case Style | Module |
| Operating Temperature Max | 150°C |
| Junction Temperature Tj Max | 150°C |
| Continuous Collector Current | 75A |
| Collector Emitter Voltage Max | 600V |
| Collector Emitter Voltage V(Br)Ceo | 600V |
| Collector Emitter Saturation Voltage | 2.2V |
| Collector Emitter Saturation Voltage Vce(On) | 600V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1185653/)

## _**CM75DU-12F**_ POWRREX 

## _**Powerex, Inc., 200 E.Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272**_ 

_**Trench Gate Design Dual IGBTMOD™ 75 Amperes/600 Volts**_ 

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## **Description:** 

Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery freewheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. 

## **Features:** 

- £ Low Drive Power 

- £ Low VCE(sat) 

- £ Discrete Super-Fast Recovery Free-Wheel Diode 

- £ Isolated Baseplate for Easy Heat Sinking 

## **Applications:** 

## **Outline Drawing and Circuit Diagram** 

- £ AC Motor Control 

- £ UPS 

|**Dimensions**|**Dimensions**|**Inches**|**Millimeters**|**Dimensions**|**Inches**|**Millimeters**|
|---|---|---|---|---|---|---|
|A||3.70|94.0|N|0.28|7.0|
|B||1.89|48.0|P|M5|M5|
|C|1.18 +0.04/-0.02||30.0 +1.0/-0.5|Q|Dia. 0.26|6.5 Dia.|
|D||3.15±0.01|80.0±0.25|R|0.02|4.0|
|E||0.43|11.0|S|0.30|7.5|
|F||0.16|4.0|T|0.63|16.0|
|G||0.71|18.0|U|0.10|2.5|
|H||0.02|0.5|V|1.0|25.0|
|J||0.53|13.5|W|0.94|24.0|
|K||0.91|23.0|X|0.51|13.0|
|L||0.83|21.2|Y|0.47|12.0|
|M||0.67|17.0|Z|0.47|12.0|



- £ Battery Powered Supplies 

## **Ordering Information:** 

Example: Select the complete module number you desire from the table - i.e. CM75DU-12F is a 600V (VCES), 75 Ampere Dual IGBTMOD™ Power Module. 

||**Current Rating**|**VCES**|
|---|---|---|
|**Type**|**Amperes**|**Volts (x 50)**|
|CM|75|12|



**1** 

**==> picture [504 x 38] intentionally omitted <==**

_**Powerex, Inc., 200 E.Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272**_ 

## _**CM75DU-12F**_ 

## _**Trench Gate Design Dual IGBTMOD™**_ 

_75 Amperes/600 Volts_ 

## **Absolute Maximum Ratings, Tj = 25°C unless otherwise specified** 

|**Absolute Maximum Ratings,** **Tj = 25°C unless otherwi**|**se specifed**|||
|---|---|---|---|
|**Ratings**|**Symbol**|**CM75DU-12F**|**Units**|
|Junction Temperature|Tj|-40 to 150|°C|
|Storage Temperature|Tstg|-40 to 125|°C|
|Collector-Emitter Voltage (G-E SHORT)|VCES|600|Volts|
|Gate-Emitter Voltage (C-E SHORT)|VGES|±20|Volts|
|Collector Current (Tc = 25°C)|IC|75|Amperes|
|Peak Collector Current|ICM|150*|Amperes|
|Emitter Current** (Tc = 25°C)|IE|75|Amperes|
|Peak Emitter Current**|IEM|150*|Amperes|
|Maximum Collector Dissipation (Tc = 25°C, Tj ≤150°C)|Pc|290|Watts|
|Mounting Torque, M5 Main Terminal|–|40|in-lb|
|Mounting Torque, M5 Mounting|–|40|in-lb|
|Weight|–|310|Grams|
|Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)|Viso|2500|Volts|



## **Static Electrical Characteristics,Tj = 25°C unless otherwise specified** 

|**Static Electrical Characteristic**|**s,Tj = 25°C unle**|**ss otherwise specifed**|||||
|---|---|---|---|---|---|---|
|**Characteristics**|**Symbol**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Units**|
|Collector-Cutoff Current|ICES|VCE = VCES, VGE = 0V|–|–|1|mA|
|Gate Leakage Current|IGES|VGE = VGES, VCE = 0V|–|–|20|μA|
|Gate-Emitter Threshold Voltage|VGE(th)|IC = 7.5mA, VCE = 10V|5|6|7|Volts|
|Collector-Emitter Saturation Voltage|VCE(sat)|IC = 75A, VGE = 15V, Tj= 25°C|–|1.6|2.2|Volts|
|||IC = 75A, VGE = 15V, Tj= 125°C|–|1.6|–|Volts|
|Total Gate Charge|QG|VCC = 300V, IC = 75A, VGE = 15V|–|465|–|nC|
|Emitter-Collector Voltage**|VEC|IE= 75A, VGE= 0V|–|–|2.6|Volts|



* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. 

** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). 

**2** 

**==> picture [504 x 38] intentionally omitted <==**

## _**Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272**_ 

## _**CM75DU-12F Trench Gate Design Dual IGBTMOD™**_ 

_75 Amperes/600 Volts_ 

## **Dynamic Electrical Characteristics, Tj = 25°C unless otherwise specified** 

|**Characteristics**||**Symbol**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Units**|
|---|---|---|---|---|---|---|---|
|Input Capacitance||Cies||–|–|20|nf|
|||||||||
|Output Capacitance||Coes|VCE = 10V, VGE = 0V|–|–|1.4|nf|
|Reverse Transfer|Capacitance|Cres||–|–|0.75|nf|
|Inductive|Turn-on Delay Time|td(on)|VCC = 300V, IC = 75A,|–|–|100|ns|
|Load|Rise Time|tr|VGE1 = VGE2 = 15V,|–|–|80|ns|
|||||||||
|Switch|Turn-off Delay Time|td(off)|RG = 8.3,|–|–|300|ns|
|Times|Fall Time|tf|Inductive Load|–|–|250|ns|
|||||||||
|Diode Reverse Recovery Time**||trr|Switching Operation|–|–|150|ns|
|||||||||
|Diode Reverse Recovery Charge**||Qrr|IE= 75A|–|1.4|–|μC|



**Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specified** 

|**Characteristics**|**Symbol**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Units**|
|---|---|---|---|---|---|---|
|Thermal Resistance, Junction to Case|Rth(j-c)Q|Per IGBT 1/2 Module, Tc Reference|–||0.43|°C/W|
|||Point per Outline Drawing|||||
|Thermal Resistance, Junction to Case|Rth(j-c)D|Per FWDi 1/2 Module, Tc Reference|–|–|0.9|°C/W|
|||Point per Outline Drawing|||||
|Thermal Resistance, Junction to Case|Rth(j-c)'Q|Per IGBT 1/2 Module,|–|0.29||°C/W|
|||Tc Reference Point Under Chip|||||
|Contact Thermal Resistance|Rth(c-f)|Per Module, Thermal Grease Applied|–|0.055|–|°C/W|



** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). 

3 

**==> picture [504 x 38] intentionally omitted <==**

## _**Powerex, Inc., 200 E.Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272**_ 

## _**CM75DU-12F**_ 

## _**Trench Gate Design Dual IGBTMOD™**_ 

_75 Amperes/600 Volts_ 

**==> picture [501 x 512] intentionally omitted <==**

**----- Start of picture text -----**<br>
COLLECTOR-EMITTER COLLECTOR-EMITTER<br>OUTPUT CHARACTERISTICS SATURATION VOLTAGE CHARACTERISTICS SATURATION VOLTAGE CHARACTERISTICS<br>(TYPICAL) (TYPICAL) (TYPICAL)<br>150 Tj = 25 [o] C 1511 10 9.5 3 VGE = 15V 5 Tj = 25°C<br>120 VGE = 20V TTjj = 25 = 125°C°C 4<br>9 2<br>90 3<br>IC = 150A<br>60 8.5 2 IC = 75A<br>1<br>30 8 1 IC = 30A<br>7.5<br>0 0 0<br>0 1 2 3 4 0 30 60 90 120 150 0 6 8 10 12 14 16 18 20<br>COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES) GATE-EMITTER VOLTAGE, VGE, (VOLTS)<br>FREE-WHEEL DIODE HALF-BRIDGE<br>FORWARD CHARACTERISTICS CAPACITANCE VS. VCE SWITCHING CHARACTERISTICS<br>(TYPICAL) (TYPICAL) (TYPICAL)<br>10 [3] 10 [2] 10 [3]<br>Tj = 25°C VVCCGE = 300V = ±15V td(off)<br>Cies RTjG = 125 = 8.3 °CΩ tf<br>10 [2] 10 [1] 10 [2] Inductive Load<br>td(on)<br>tr<br>10 [1] 10 [0] 10 [1]<br>Coes<br>VGE = 0V Cres<br>10 [0] 10 [-1] 10 [0]<br>0 1.0 2.0 3.0 4.0 10 [-1] 10 [0] 10 [1] 10 [2] 10 [0] 10 [1] 10 [2]<br>EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) COLLECTOR CURRENT, IC, (AMPERES)<br>TRANSIENT THERMAL<br>REVERSE RECOVERY CHARACTERISTICS IMPEDANCE CHARACTERISTICS<br>(TYPICAL) GATE CHARGE, VGE (IGBT & FWDi)<br>10 [-3] 10 [-2] 10 [-1] 10 [0] 10 [1]<br>10 [2] 10 [2] 20 10 [1]<br>IC = 75A Per Unit Base<br>Rth(j-c) = 0.43°C/W (IGBT)<br>trr 16 Rth(j-c) = 0.9°C/W   (FWDi)<br>VCC = 200V 10 [0] Single Pulse<br>Irr 12 VCC = 300V TC = 25°C<br>10 [1] 10 [1] 10 [-1] 10 [-1]<br>8<br>VCC = 300V<br>VGE = ±15V 10 [-2] 10 [-2]<br>RG = 8.3 Ω 4<br>Tj = 25°C<br>Inductive Load<br>10 [0] 10 [0] 0 10 [-3] 10 [-3]<br>10 [0] 10 [1] 10 [2] 0 200 400 600 800 10 [-5] 10 [-4] 10 [-3]<br>EMITTER CURRENT, IE, (AMPERES) GATE CHARGE, QG, (nC) TIME, (s)<br>, (AMPERES)C COLLECTOR-EMITTER , (VOLTS)CE(sat)  COLLECTOR-EMITTER<br>COLLECTOR CURRENT, I SATURATION VOLTAGE, V SATURATION VOLTAGE, VCE(sat), (VOLTS)<br>, (nF)<br>res<br>, C<br>, (AMPERES)E , Coes<br>ies<br> SWITCHING TIME, (ns)<br>EMITTER CURRENT, I CAPACITANCE, C<br>th(j-c)<br>, (ns)rr , (AMPERES)rr , (VOLTS)GE<br> • (NORMALIZED VALUE)<br>th<br> = R<br>th<br>Z<br>REVERSE RECOVERY TIME, t<br>GATE-EMITTER VOLTAGE, V<br> REVERSE RECOVERY CURRENT, I<br> NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z<br>**----- End of picture text -----**<br>


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- [Supplier page](https://es.farnell.com/mitsubishi-electric/cm75du-12f/igbt-module-600v-75a/dp/1185653)
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