# IGBT, MODULE, N CHANNEL, 1.2KV, 450A

![Product image](https://novapart.co/image/farnell:2402237/)

**URL**: https://novapart.co/products/CM450DX-24S1/igbt-module-n-channel-12kv-450a
**SKU**: CM450DX-24S1
**Manufacturer**: MITSUBISHI ELECTRIC
**Category**: Semiconductors - Discretes || IGBTs || IGBT Modules
**Price**: €129.2000
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| Product Range | 1.2kV NX 6.1 Series |
| Igbt Termination | Tab |
| Power Dissipation | 2.775kW |
| Igbt Configuration | Dual [Half Bridge] |
| Transistor Mounting | Panel |
| Dc Collector Current | 450A |
| Power Dissipation Pd | 2.775kW |
| Transistor Case Style | Module |
| Operating Temperature Max | 150°C |
| Junction Temperature Tj Max | 150°C |
| Continuous Collector Current | 450A |
| Collector Emitter Voltage Max | 1.2kV |
| Collector Emitter Voltage V(Br)Ceo | 1.2kV |
| Collector Emitter Saturation Voltage | 1.8V |
| Collector Emitter Saturation Voltage Vce(On) | 1.8V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2402237/)

## **< IGBT MODULES >** 

## **CM450DX-24S1 HIGH POWER SWITCHING USE INSULATED TYPE** 

Collector current IC .............….......................… **4 5 0** A Collector-emitter voltage VCES ......................… **1 2 0 0** V Maximum junction temperature T j m a x .............. **1 7 5** °C ●Flat base Type ●Copper base plate (non-plating) ●Tin plating pin terminals ●RoHS Directive compliant **Dual switch (Half-Bridge)** ●Recognized under UL1557, File E323585 

## **APPLICATION** 

AC Motor Control, Motion/Servo Control, Power supply, etc. 

## **OUTLINE DRAWING & INTERNAL CONNECTION** 

**==> picture [402 x 447] intentionally omitted <==**

**----- Start of picture text -----**<br>
Dimension in mm<br>152 3.81<br>110+0.5 20.8 raz (| [ |<br>a ( ——— ca TERMINAL t=0.8 94.5<br>-<br>SECTION A<br>es 22 ° 16.5 .<br>~~ R 3 ue<br>wow fod MOUNTING HOLES<br>DETAIL B<br>><br>A A es 6 Nos<br>SECTION C-C<br>INTERNAL CONNECTION<br>9  8  Tolerance otherwise specified<br>Terminal code<br>Division of Dimension  Tolerance<br>1  TH1  0.5  to   3  ±0.2<br>Tr2  2  TH2<br>10 7  3  G1  over   3  to   6  ±0.3<br>Di1  4  Es1  over   6  to  30  ±0.5<br>Di2  5  Cs1<br>6  C2E1  over  30  to 120  ±0.8<br>1 1  6<br>Tr1  7  C2E1  over 120  to 400  ±1.2<br>NTC  8  G2<br>9  Es2<br>Th  10  E2<br>11  C1<br>1  2  3  4  5<br>**----- End of picture text -----**<br>


Publication Date : December 2013 

1 

**< IGBT MODULES >** CM450DX-24S1 **HIGH POWER SWITCHING USE INSULATED TYPE** 

## **MAXIMUM RATINGS (Tj=25 °C, unless otherwise specified) INVERTER PART IGBT/DIODE** 

|Symbol|Item|||Conditions|Rating|Unit|
|---|---|---|---|---|---|---|
|VCES|Collector-emitter voltage|G-E short-circuited|G-E short-circuited||1200|V|
|VGES|Gate-emitter voltage|C-E short-circuited|C-E short-circuited||± 20|V|
|IC<br>ICRM|Collector current|DC, TC=107 °C(Note2, 4)<br>Pulse, Repetitive<br>(Note3)|||450<br>900|A|
|Pt o t|Totalpower dissipation|TC=25 °C(Note2, 4)|||2775|W|
|IE (Note1)<br>IERM (Note1)|Emitter current|DC(Note2)<br>Pulse, Repetitive|(Note3)||450<br>900|A|
|**MODULE**|||||||
|Symbol|Item|||Conditions|Rating|Unit|
|Vi s o l|Isolation voltage|Terminals to baseplate, RMS, f=60 Hz, AC 1 min||late, RMS, f=60 Hz, AC 1 min|4000|V|
|Tj m a x<br>TC m a x|Maximumjunction temperature<br>Maximum case temperature|Instantaneous event(overload)<br>(Note4)|||175<br>125|°C|
|Tj o p|Operating junction temperature|Continuous operation(under switching)|||-40 ~ +150|°C|
|Ts t g|Storage temperature|-|||-40 ~ +125||



|~~a~~||||~~eee~~<br>|~~eee~~<br>|~~eee~~<br>||
|---|---|---|---|---|---|---|---|
|Symbol<br>~~a~~<br>~~a~~|Item<br>~~ee~~<br>|Conditions<br>~~ee~~<br>||Limits<br>~~pp~~<br>~~ee~~<br>~~eee~~<br>|||Unit<br>~~pp~~<br>|
|||||Min.<br>~~pp~~<br>~~ee~~<br>|Typ.<br>~~pp~~<br>~~ee~~<br>~~eee~~<br>|Max.<br>~~pp~~<br>~~ee~~<br>~~eee~~<br>||
|ICES<br>~~a GO~~|Collector-emitter cut-off current<br>~~GO~~|VCE=VCES, G-E short-circuited<br>~~GO~~||-<br>~~GO~~|-<br>~~eee~~<br>~~GO~~|1.0<br>~~eee~~<br>~~GO~~|mA<br>~~GO~~|
|IGES<br>~~GO~~|Gate-emitter leakage current<br>~~GO~~|VGE=VGES, C-E short-circuited<br>~~GO~~||-<br>~~GO~~|-<br>~~GO~~|0.5<br>~~GO~~|μA<br>~~GO~~|
|VGE(th)<br>~~CO~~|Gate-emitter threshold voltage<br>~~CO~~|IC=45 mA, VCE=10 V<br>~~CO~~||5.4<br>~~CO~~<br>~~ee~~|6.0<br>~~CO~~<br>~~ee~~|6.6<br>~~CO~~<br>~~ee~~|V<br>~~CO~~<br>~~ee~~|
|VCEsat<br>(Terminal)|Collector-emitter saturation voltage|IC=450 A, VGE=15 V,<br>Refer to the figure of test circuit<br>(Note5)|Tj=25 °C<br>~~es~~|-<br>~~es~~<br>~~ee~~<br>~~ee~~|1.80<br>~~es~~<br>~~ee~~<br>~~ee~~|2.25<br>~~es~~<br>~~ee~~<br>~~ee~~|V<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|
||||Tj=125 °C<br>~~ee~~|-<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|2.00<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|-<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~||
||||Tj=150 °C<br>~~es~~|-<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~|2.05<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~|-<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~||
|VCEsat<br>(Chip)<br>~~a~~<br>~~es~~||IC=450 A,<br>VGE=15 V,<br>(Note5)|Tj=25 °C<br>~~ee~~|-<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|1.70<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|2.15<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|V<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|
||||Tj=125 °C<br>~~ee~~|-<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|1.90<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|-<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~||
||||Tj=150 °C<br>~~ee~~|-<br>~~ee~~<br>~~ee~~<br>~~ee~~|1.95<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|-<br>~~ee~~<br>~~ee~~<br>~~ee~~||
|Ci e s<br>~~a~~<br>~~es~~<br>~~es~~|Input capacitance|VCE=10 V, G-E short-circuited||-<br>~~ee ~~<br>~~es~~|-<br> ~~ee ~~<br>~~es~~<br>~~ee~~<br>~~**ee**~~|45<br> ~~ee~~<br>~~es~~|nF<br>~~ee~~|
|Co e s<br>~~es~~<br>~~es~~|Output capacitance|||-<br>~~es~~|-<br>~~ee~~<br>~~es~~<br>~~**ee**~~|9.0<br>~~es~~||
|Cr e s<br>~~es~~<br>~~es~~|Reverse transfer capacitance|||-<br>~~es~~|-<br>~~ee~~<br>~~**ee**~~<br>~~es~~|0.75<br>~~es~~||
|QG<br>~~es~~<br>~~GO~~<br>~~ee~~|Gate charge<br>~~GO~~|VCC=600 V, IC=450 A, VGE=15 V<br>~~GO~~||-<br>~~GO~~<br>~~a~~|945<br>~~**ee**~~<br>~~GO~~<br>~~ee~~|-<br>~~GO~~|nC<br>~~GO~~|
|td ( o n )<br>~~ee~~<br>~~a~~|Turn-on delaytime|VCC=600 V, IC=450 A, VGE=±15 V,<br>RG=0 Ω, Inductive load<br>~~ee~~||-<br>~~a~~<br>~~a~~|-<br>~~ee~~<br>~~ee~~|800|ns<br>~~ee~~|
|tr<br>~~ee~~<br>~~a~~<br>~~a~~|Rise time|||-<br>~~a~~<br>~~a~~|-<br>~~ee~~<br>~~ee~~<br>~~ee~~|200||
|td ( o f f )<br>~~a~~<br>~~a~~<br>~~a~~|Turn-off delaytime<br>~~ee~~|||-<br>~~a~~<br>~~ee~~<br>~~ee~~|-<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|600<br>~~ee~~<br>~~ee~~||
|tf<br>~~a~~|Fall time<br>~~ee~~|||-<br>~~ee~~<br>~~ee~~|-<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|300<br>~~ee~~<br>~~ee~~||
|VEC<br>(Note1)<br>(Terminal)|Emitter-collector voltage<br>~~ee~~|IE=450 A, G-E short-circuited,<br>Refer to the figure of test circuit<br>(Note5)<br>~~ee~~|Tj=25 °C<br>~~ee~~|-<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|2.60<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|3.40<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|V<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|
||||Tj=125 °C<br>~~es~~|-<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~|2.16<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~|-<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~||
||||Tj=150 °C<br>~~es~~|-<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~|2.10<br>~~ee ~~<br>~~es~~<br>~~ee~~<br>~~ee~~|-<br> ~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~||
|VEC<br>(Note1)<br>(Chip)||IE=450 A,<br>G-E short-circuited,<br>(Note5)|Tj=25 °C<br>~~ee~~|-<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|2.50<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|3.30<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|V<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|
||||Tj=125 °C<br>~~es~~|-<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~|2.06<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~|-<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~||
||||Tj=150 °C<br>~~ee~~|-<br>~~ee~~<br>~~ee~~<br>~~ee~~|2.00<br>~~ee~~<br>~~ee~~<br>~~ee~~|-<br>~~ee~~<br>~~ee~~<br>~~ee~~||
|tr r<br>(Note1)<br>~~ee~~<br>~~a~~|Reverse recoverytime<br>~~ee~~<br>~~ee~~|VCC=600 V, IE=450 A, VGE=±15 V,<br>RG=0 Ω, Inductive load<br>~~ee~~<br>~~ee~~||-<br>~~ee~~<br>~~ee~~<br>~~ee~~|-<br>~~ee~~<br>~~ee~~<br>~~ee~~|300<br>~~ee~~<br>~~ee~~<br>~~ee~~|ns<br>~~ee~~<br>~~ee~~<br>~~ee~~|
|Qr r<br>(Note1)<br>~~ee~~<br>~~a~~<br>~~———~~|Reverse recoverycharge<br>~~ee~~<br>~~ee~~<br>~~———~~|||-<br>~~ee~~<br>~~ee~~<br>~~js]~~|12<br>~~ee~~<br>~~ee~~<br>~~js]~~|-<br>~~ee~~<br>~~ee~~<br>~~js]~~|μC<br>~~ee~~<br>~~ee~~<br>~~js]~~|
|Eon<br>~~a~~<br>~~———~~<br>~~es~~<br>~~es~~|Turn-on switchingenergy perpulse<br>~~ee~~<br>~~———~~|VCC=600 V, IC=IE=450 A,<br>VGE=±15 V, RG=0 Ω, Tj=150 °C,<br>Inductive load<br>~~ee~~||-<br>~~ee~~<br>~~js]~~<br>~~es~~|35.8<br>~~ee~~<br>~~js]~~<br>~~es~~<br>~~ee~~|-<br>~~ee ~~<br>~~js]~~<br>~~es~~|mJ<br> ~~ee~~<br>~~js]~~<br>~~ee~~|
|Eoff<br>~~———~~<br>~~es~~<br>~~es~~|Turn-off switchingenergy perpulse<br>~~———~~|||-<br>~~js]~~<br>~~es~~|52.4<br>~~js]~~<br>~~es~~<br>~~ee~~<br>~~ee~~|-<br>~~js]~~<br>~~es~~<br>~~ee~~||
|Err<br>(Note1)<br>~~———~~<br>~~es~~<br>~~es~~|Reverse recoveryenergy perpulse<br>~~———~~|||-<br>~~js]~~<br>~~es~~<br>~~es~~|27.9<br>~~js]~~<br>~~es~~<br>~~ee~~<br>~~es~~<br>~~ee~~|-<br>~~js]~~<br>~~es~~<br>~~es~~<br>~~ee~~|mJ<br>~~js]~~<br>~~es~~<br>~~ee~~|
|RCC'+EE'<br>~~es~~|Internal lead resistance|Main terminals-chip, per switch,<br>TC=25 °C(Note2)||-|-<br>~~ee~~<br>~~ee~~|0.7<br>~~ee ~~|mΩ<br> ~~ee~~|
|rg<br>~~CO~~|Internalgate resistance<br>~~CO~~|Per switch<br>~~CO~~||-<br>~~CO~~|4.3<br>~~CO~~|-<br>~~CO~~|Ω<br>~~CO~~|



Publication Date : December 2013 

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**< IGBT MODULES >** CM450DX-24S1 **HIGH POWER SWITCHING USE INSULATED TYPE** 

## **ELECTRICAL CHARACTERISTICS (cont.; T j =25 °C, unless otherwise specified) NTC THERMISTOR PART** 

|Limits|
|---|
|Symbol<br>Item<br>Conditions<br>Unit<br>Min.<br>Typ.<br>Max.|
|R25<br>Zero-power resistance<br>TC=25 °C(Note4)<br>4.85<br>5.00<br>5.15<br>kΩ|
|ΔR/R<br>Deviation of resistance<br>R100=493 Ω, TC=100 °C(Note4)<br>-7.3<br>-<br>+7.8<br>%|
|B(25/50)<br>B-constant<br>Approximate byequation(Note6)<br>-<br>3375<br>-<br>K|
|P25<br>Power dissipation<br>TC=25 °C(Note4)<br>-<br>-<br>10<br>mW|
|**THERMAL RESISTANCE CHARACTERISTICS**|
|Limits|
|Symbol<br>Item<br>Conditions<br>Unit<br>Min.<br>Typ.<br>Max.|
|Rt h ( j - c ) Q<br>Thermal resistance<br>Junction to case,per Inverter IGBT(Note4)<br>-<br>-<br>54<br>K/kW<br>Rt h ( j - c ) D<br>Junction to case,per Inverter DIODE(Note4)<br>-<br>-<br>86|
|Rt h ( c - s )<br>Contact thermal resistance<br>Case to heat sink, per 1 module,<br>-<br>15<br>-<br>K/kW<br>Thermal grease applied(Note4, 7)|
|**MECHANICALCHARACTERISTICS**|
|Symbol<br>Item<br>Conditions<br>Limits<br>Unit<br>Min.<br>Typ.<br>Max.<br>Mt<br>Mountingtorque<br>Main terminals<br>M 6 screw<br>3.5<br>4.0<br>4.5<br>N·m<br>Ms<br>Mountingtorque<br>Mountingto heat sink<br>M 5 screw<br>2.5<br>3.0<br>3.5<br>N·m<br>m<br>mass<br>-<br>-<br>350<br>-<br>g<br>ds<br>Creepage distance<br>Terminal to terminal<br>17<br>-<br>-<br>mm<br>Terminal to baseplate<br>18.5<br>-<br>-<br>da<br>Clearance<br>Terminal to terminal<br>10<br>-<br>-<br>mm<br>Terminal to baseplate<br>16.3<br>-<br>-<br>ec<br>Flatness of baseplate<br>On the centerline X, Y(Note8)<br>±0<br>-<br>+100<br>μm<br>~~a~~<br>~~i~~<br>~~eses~~<br>~~(~~<br>~~ee(QO~~<br>~~a (GO~~<br>~~GO~~<br>~~ae~~<br>~~ass~~<br>~~es(Rn~~|



Note1. Represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (DIODE) 

2. Junction temperature (T j ) should not increase beyond T j m a x rating. 

3. Pulse width and repetition rate should be such that the device junction temperature (T j ) dose not exceed T j m a x rating. 

4. Case temperature (TC) and heat sink temperature (T s ) are defined on the each surface (mounting side) of base plate and heat sink just under the chips. Refer to the figure of chip location. 

5. Pulse width and repetition rate should be such as to cause negligible temperature rise. 

> 6. B( 25 / 50 ) =ln( RR 5025 ) /( T 125 − T 150 ) 

R25: resistance at absolute temperature T25 [K]; T25=25 [°C]+273.15=298.15 [K] 

R50: resistance at absolute temperature T50 [K]; T50=50 [°C]+273.15=323.15 [K] 

7. Typical value is measured by using thermally conductive grease of λ=0.9 W/(m·K). 

8. The base plate (mounting side) flatness measurement points (X, Y) are as follows of the following figure. 

**==> picture [186 x 105] intentionally omitted <==**

**----- Start of picture text -----**<br>
Y<br>i<br>X<br>mounting side<br>mounting side  tet.<br>-:Concave<br>mounting side  +:Convex<br>+:Convex  -:Concave<br>**----- End of picture text -----**<br>


9. Use the following screws when mounting the printed circuit board (PCB) on the stand offs. "φ2.6×10 or φ2.6×12 B1 tapping screw" 

- The length of the screw depends on thickness (t1.6~t2.0) of the PCB. 

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**< IGBT MODULES >** CM450DX-24S1 **HIGH POWER SWITCHING USE INSULATED TYPE** 

## **RECOMMENDED OPERATING CONDITIONS** 

|Symbol|Item|Conditions|Limits|Limits|Limits|Unit|
|---|---|---|---|---|---|---|
||||Min.|Typ.|Max.||
|VCC|(DC)Supplyvoltage|Applied across C1-E2 terminals|-|600|850|V|
|VGEon|Gate(-emitter drive)voltage|Applied across G1-Es1/G2-Es2 terminals|13.5|15.0|16.5|V|
|RG|Externalgate resistance|Per switch|0|-|10|Ω|



## **CHIP LOCATION (Top view)** 

Dimension in mm, tolerance: ±1 mm 

Tr1/Tr2: IGBT, Di1/Di2: DIODE, Th: NTC thermistor 

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**< IGBT MODULES >** CM450DX-24S1 **HIGH POWER SWITCHING USE INSULATED TYPE** 

## **TEST CIRCUIT AND WAVEFORMS** 

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iE<br>11  vGE 90 %<br>5  0 V 0  iE Q rr=0.5×I rr×t rr<br>t<br>-VGE 3 4  6,7  Load  + VCC : iC IE t rr<br>9 0 %  0 A t<br>+VGE RG 8  vCE I rr 0.5×I rr<br>0  vGE iC 10%<br>-VGE 9  0 A t r t f t<br>10  t d(on) t d(off)<br>Switching characteristics test circuit and waveforms  t rr, Q rr characteristics test waveform<br>iE I EM vEC<br>I CM iC iC I CM VCC<br>vCE V CC VCC vCE<br>0 A  t<br>0  0. 1×I CM 0.1× VCC t  0  0.1× V CC 0.02×IC M t  0 V  t<br>t i t i t i<br>IGBT Turn-on switching energy  IGBT Turn-off switching energy  DIODE Reverse recovery energy<br>～～<br>～～<br>**----- End of picture text -----**<br>


**Turn-on / Turn-off switching energy and Reverse recovery energy test waveforms (Integral time instruction drawing)** 

## **TEST CIRCUIT** 

**==> picture [513 x 151] intentionally omitted <==**

**----- Start of picture text -----**<br>
11  11  11  11<br>5  Short-  5  Short-  5  Short-  5<br>VGE=15V  3  IC circuited  3  circuited  3  IE circuited  3<br>V  4  6,7  4  6,7  V  V  4  6,7  4  6,7  V<br>Short-<br>circuited Short-  VGE=15V  8  IC circuited Short-  circuited  8  IE<br>8  8<br>9  10  9  10  9  10  9  10<br>Tr1 Tr2 Di1 Di2<br>VCEsat characteristics test circuit VEC characteristics test circuit<br>**----- End of picture text -----**<br>


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**< IGBT MODULES >** CM450DX-24S1 **HIGH POWER SWITCHING USE INSULATED TYPE** 

## **PERFORMANCE CURVES INVERTER PART** 

**==> picture [232 x 622] intentionally omitted <==**

**----- Start of picture text -----**<br>
OUTPUT CHARACTERISTICS<br>(TYPICAL)<br>T j =25 °C  (Chip)<br>900<br>VGE=20 V  15 V<br>800<br>12 V<br>700<br>600<br>11 V<br>500<br>400<br>10 V<br>300<br>200 9 V<br>100<br>0 S<br>0 2 4 6 8 10<br>COLLECTOR-EMITTER VOLTAGE  VCE  (V)<br>COLLECTOR-EMITTER SATURATION VOLTAGE<br>CHARACTERISTICS<br>(TYPICAL)<br>T j =25 °C  (Chip)<br>10<br>8 IC=900 A<br>IC=450 A<br>6<br>I C =180 A<br>4<br>2<br>0<br>6 8 10 12 14 16 18 20<br>GATE-EMITTER VOLTAGE  VGE  (V)<br>  (A)<br>C<br>COLLECTOR CURRENT  I<br>  (V)<br>CEsat<br>COLLECTOR-EMITTER SATURATION VOLTAGE  V<br>**----- End of picture text -----**<br>


**==> picture [184 x 27] intentionally omitted <==**

**----- Start of picture text -----**<br>
COLLECTOR-EMITTER SATURATION VOLTAGE<br>CHARACTERISTICS<br>(TYPICAL)<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
VGE=15 V  (Chip)<br>3.5<br>3 T  j =150 °C<br>2.5 T j =125 °C<br>2<br>1.5 T  j =25 °C<br>1<br>0.5<br>0<br>0 100 200 300 400 500 600 700 800 900<br>COLLECTOR CURRENT  IC  (A)<br>  (V)<br>CEsat<br>COLLECTOR-EMITTER SATURATION VOLTAGE  V<br>**----- End of picture text -----**<br>


**FREE WHEELING DIODE FORWARD CHARACTERISTICS (TYPICAL)** 

**==> picture [233 x 260] intentionally omitted <==**

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G-E short-circuited  (Chip)<br>1000<br>T j =150 °C<br>T j =25 °C<br>100<br>T  j =125 °C<br>10<br>0 0.5 1 1.5 2 2.5 3 3.5 4<br>EMITTER-COLLECTOR VOLTAGE  VEC  (V)<br>  (A)<br>E<br>EMITTER CURRENT  I<br>**----- End of picture text -----**<br>


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**< IGBT MODULES >** CM450DX-24S1 **HIGH POWER SWITCHING USE INSULATED TYPE** 

## **PERFORMANCE CURVES** 

## **INVERTER PART** 

## **HALF-BRIDGE** 

## **SWITCHING CHARACTERISTICS** 

**(TYPICAL)** 

VCC=600 V, VGE=±15 V, RG=0 Ω, INDUCTIVE LOAD ---------------: T j =150 °C, - - - - -: T j =125 °C 

**==> picture [232 x 234] intentionally omitted <==**

**----- Start of picture text -----**<br>
10000 100<br>t r<br>Ne “a<br>1000 10<br>t d(off)<br>t f<br>t d(on)<br>100 1<br>10 100 1000<br>  (ns)<br>d(off)<br>, t, tf<br>d(on)<br>SWITCHING TIME  t<br>**----- End of picture text -----**<br>


**COLLECTOR CURRENT  IC  (A)** 

## **HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL)** 

VCC=600 V, VGE=±15 V, RG=0 Ω, INDUCTIVE LOAD, PER PULSE 

---------------: T j =150 °C, - - - - -: T j =125 °C 

**==> picture [230 x 254] intentionally omitted <==**

**----- Start of picture text -----**<br>
100 1000<br>E o f f<br>LI<br>E o n<br>10 100<br>E r r<br>oe a<br>1 10<br>0.1 1<br>10 100 1000<br>COLLECTOR CURRENT  IC  (A)<br>EMITTER CURRENT  IE  (A)<br>SWITCHING ENERGY  (mJ)<br>**----- End of picture text -----**<br>


## **HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL)** 

VCC=600 V, VGE=±15 V, IC=450 A, INDUCTIVE LOAD ---------------: T j =150 °C, - - - - -: T j =125 °C 

**==> picture [233 x 247] intentionally omitted <==**

**----- Start of picture text -----**<br>
10000 1000<br>t d(on)<br>t r<br>- yu<br>1000 100<br>t d(off)<br>t f<br>100 10<br>0.1 1 10 100<br>EXTERNAL GATE RESISTANCE  RG  (Ω)<br>  (ns)<br>d(off)<br>SWITCHING TIME  t, tf<br>**----- End of picture text -----**<br>


## **HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL)** 

VCC=600 V, VGE=±15 V, IC/IE=450 A, INDUCTIVE LOAD, PER PULSE 

---------------: T j =150 °C, - - - - -: T j =125 °C 

**==> picture [264 x 243] intentionally omitted <==**

**----- Start of picture text -----**<br>
100 1000<br>E o f f<br>E r r<br>10 E o n 100<br>ha<br>1 10<br>0.01 0.1 1 10 100<br>EXTERNAL GATE RESISTANCE  RG  (Ω)<br>  (mJ)<br> o f f<br>SWITCHING ENERGY  E<br>REVERSE RECOVERY ENERGY  (mJ) REVERSE RECOVERY ENERGY  (mJ)<br>**----- End of picture text -----**<br>


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**< IGBT MODULES >** CM450DX-24S1 **HIGH POWER SWITCHING USE INSULATED TYPE** 

## **PERFORMANCE CURVES** 

## **INVERTER PART** 

## **CAPACITANCE CHARACTERISTICS** 

**(TYPICAL)** 

**==> picture [105 x 9] intentionally omitted <==**

**----- Start of picture text -----**<br>
G-E short-circuited, T j =25 °C<br>**----- End of picture text -----**<br>


**==> picture [232 x 247] intentionally omitted <==**

**----- Start of picture text -----**<br>
100<br>C i e s<br>10<br>C  o e s<br>1<br>C r e s<br>0.1<br>0.01<br>0.1 1 10 100<br>COLLECTOR-EMITTER VOLTAGE  VCE  (V)<br>CAPACITANCE  (nF)<br>**----- End of picture text -----**<br>


## **GATE CHARGE CHARACTERISTICS (TYPICAL)** 

**==> picture [109 x 9] intentionally omitted <==**

**----- Start of picture text -----**<br>
VCC=600 V, IC=450 A, Tj=25 °C<br>**----- End of picture text -----**<br>


**==> picture [232 x 247] intentionally omitted <==**

**----- Start of picture text -----**<br>
20<br>15<br>10<br>5<br>0<br>0 500 1000 1500<br>GATE CHARGE  QG  (nC)<br>  (V)<br>GE<br>GATE-EMITTER VOLTAGE  V<br>**----- End of picture text -----**<br>


## **FREE WHEELING DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL)** 

VCC=600 V, VGE=±15 V, RG=0 Ω, INDUCTIVE LOAD ---------------: T j =150 °C, - - - - -: T j =125 °C 

**==> picture [232 x 247] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000<br>I r r<br>LI<br>t r r<br>100<br>10<br>10 100 1000<br>EMITTER CURRENT  IE  (A)<br>  (A)<br> r r<br>  (ns), I<br>t r r<br>**----- End of picture text -----**<br>


## **TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (MAXIMUM)** 

**==> picture [224 x 272] intentionally omitted <==**

**----- Start of picture text -----**<br>
Single pulse, TC=25 °C<br>R t h ( j - c ) Q =54 K/kW, R t h ( j - c ) D=86 K/kW<br>1<br>0.1<br>0.01<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>TIME  (S)<br> t h ( j - c )<br>NORMALIZED TRANSIENT THERMAL RESISTANCE  Z<br>**----- End of picture text -----**<br>


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**< IGBT MODULES >** CM450DX-24S1 **HIGH POWER SWITCHING USE INSULATED TYPE** 

## **PERFORMANCE CURVES** 

## **NTC thermistor part** 

## **TEMPERATURE CHARACTERISTICS (TYPICAL)** 

**==> picture [227 x 244] intentionally omitted <==**

**----- Start of picture text -----**<br>
100<br>10<br>1<br>0.1<br>-50 -25 0 25 50 75 100 125<br>TEMPERATURE  T  (°C)<br>RESISTANCE  R  (kΩ)<br>**----- End of picture text -----**<br>


Publication Date : December 2013 

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**< IGBT MODULES >** CM450DX-24S1 **HIGH POWER SWITCHING USE INSULATED TYPE** 

## **Keep safety first in your circuit designs!** 

Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. 

## **Notes regarding these materials** 

- •These materials are intended as a reference to assist our customers in the selection of the Mitsubishi semiconductor product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third party. 

- •Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 

- •All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Mitsubishi Electric Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for the latest product information before purchasing a product listed herein. 

- The information described here may contain technical inaccuracies or typographical errors. Mitsubishi Electric Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. 

Please also pay attention to information published by Mitsubishi Electric Corporation by various means, including the Mitsubishi Semiconductor home page (www.MitsubishiElectric.com/semiconductors/). 

- •When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Mitsubishi Electric Corporation assumes no responsibility for any damage, liability or other loss resulting from the information containedherein. 

- •Mitsubishi Electric Corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 

- •The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole or in part these materials. 

- •If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. 

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© 2013 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED. 

Publication Date : December 2013 

10 



## Links

- [View this product on Novapart](https://novapart.co/products/CM450DX-24S1/igbt-module-n-channel-12kv-450a)
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- [Supplier page](https://es.farnell.com/en-ES/mitsubishi-electric/cm450dx-24s1/igbt-module-n-channel-1-2kv-450a/dp/2402237)
---

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