# IGBT MODULE, 1.2KV, 200A

![Product image](https://novapart.co/image/farnell:3775781/)

**URL**: https://novapart.co/products/CM200DU-24F/igbt-module-12kv-200a
**SKU**: CM200DU-24F
**Manufacturer**: MITSUBISHI ELECTRIC
**Category**: Semiconductors - Discretes || IGBTs || IGBT Modules
**Price**: €135.4900
**Stock**: 10+

## Description

Transistor Pol; IGBT MODULE, 1.2KV, 200A; Transistor Polarity:N Channel; DC Collector Current:200A; Collector Emitter Saturation Voltage Vce(on):1.2kV; Power Dissipation Pd:890W; Collector Emitt

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (17-Dec-2014) |
| Product Range | F Series |
| Igbt Technology | IGBT 5 [Trench Gate] |
| Igbt Termination | Tab |
| Power Dissipation | 890W |
| Igbt Configuration | Dual [Half Bridge] |
| Transistor Mounting | Panel |
| Dc Collector Current | 200A |
| Power Dissipation Pd | 890W |
| Transistor Case Style | Module |
| Operating Temperature Max | 150°C |
| Junction Temperature Tj Max | 150°C |
| Continuous Collector Current | 200A |
| Collector Emitter Voltage Max | 1.2kV |
| Collector Emitter Voltage V(Br)Ceo | 1.2kV |
| Collector Emitter Saturation Voltage | 2.4V |
| Collector Emitter Saturation Voltage Vce(On) | 1.2kV |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3775781/)

**CM200DU-24F** 

**Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272** 

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**Trench Gate Design Dual IGBTMOD™ 200 Amperes/1200 Volts** 

## **Description:** 

Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. 

## **Features:** 

- Low Drive Power 

- Low VCE(sat) 

- Discrete Super-Fast Recovery Free-Wheel Diode 

- Isolated Baseplate for Easy Heat Sinking 

## **Applications:** 

**Outline Drawing and Circuit Diagram** 

|**Dimensions**|**Dimensions**|**Inches**|**Millimeters**|**Dimensions**|**Inches**|**Millimeters**|
|---|---|---|---|---|---|---|
|A||4.25|108.0|L|0.87|22.0|
|B||2.44|62.0|M|0.33|8.5|
|C|1.14 +0.04/-0.02||29.0 +1.0/-0.5|N|0.10|2.5|
|D||3.66±0.01|93.0±0.25|P|0.85|21.5|
|E||1.88±0.01|48.0±0.25|Q|0.98|25.0|
|F||0.67|17.0|R|0.11|2.8|
|G||0.16|4.0|S|M6|M6|
|H||0.24|6.0|T|0.26  Dia.          6.5 Dia.|0.26  Dia.          6.5 Dia.|
|J||0.59|15.0|U|0.02|0.5|
|K||0.55|14.0|V|0.62|15.85|



- AC Motor Control 

- UPS 

- Battery Powered Supplies 

## **Ordering Information:** 

Example: Select the complete module number you desire from the table - i.e. CM200DU-24F is a 1200V (VCES), 200 Ampere Dual IGBTMOD™ Power Module. 

||**Current Rating**|**VCES**|
|---|---|---|
|**Type**|**Amperes**|**Volts (x 50)**|
|CM|200|24|



**1** 

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## **Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272** 

## **CM200DU-24F** 

## **Trench Gate Design Dual IGBTMOD™** 

200 Amperes/1200 Volts 

## **Absolute Maximum Ratings, Tj = 25** ° **C unless otherwise specified** 

|**Absolute Maximum Ratings,Tj = 25**°**C unless otherwi**|**se specified**|||
|---|---|---|---|
|**Ratings**|**Symbol**|**CM200DU-24F**|**Units**|
|Junction Temperature|Tj|-40 to 150|°C|
|Storage Temperature|Tstg|-40 to 125|°C|
|Collector-Emitter Voltage (G-E SHORT)|VCES|1200|Volts|
|Gate-Emitter Voltage (C-E SHORT)|VGES|±20|Volts|
|Collector Current (Tc= 25°C)|IC|200|Amperes|
|Peak Collector Current (Tj ≤150°C)|ICM|400*|Amperes|
|Emitter Current** (Tc= 25°C)|IE|200|Amperes|
|Peak Emitter Current**|IEM|400*|Amperes|
|Maximum Collector Dissipation (Tc= 25°C)|Pc|890|Watts|
|Mounting Torque, M6 Main Terminal|–|40|in-lb|
|Mounting Torque, M6 Mounting|–|40|in-lb|
|Weight|–|400|Grams|
|Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)|Viso|2500|Volts|



## **Static Electrical Characteristics, Tj = 25** ° **C unless otherwise specified** 

|**Static Electrical Characteristics,Tj = 25**°**C unless otherwise specified**|**Static Electrical Characteristics,Tj = 25**°**C unless otherwise specified**|
|---|---|
|**Characteristics**<br>**Symbol**<br>**Test Conditions**<br>**Min.**<br>**Typ.**<br>**Max.**<br>**Units**||
|Collector-Cutoff Current<br>ICES<br>VCE= VCES, VGE= 0V<br>–<br>–<br>1<br>mA||
|Gate Leakage Current<br>IGES<br>VGE= VGES, VCE= 0V<br>–<br>–<br>40<br>µA||
|Gate-Emitter Threshold Voltage<br>VGE(th)<br>IC= 20mA, VCE= 10V<br>5<br>6<br>7<br>Volts||
|Collector-Emitter Saturation Voltage<br>VCE(sat)<br>IC= 200A, VGE= 15V, Tj= 25°C<br>–<br>1.8<br>2.4<br>Volts||
||<br><br>|
|IC= 200A, VGE= 15V, Tj= 125°C<br>–<br>1.9<br>–<br>Volts||
|Total Gate Charge<br>QG<br>VCC= 600V, IC= 200A, VGE= 15V<br>–<br>2200<br>–<br>nC||
|Emitter-Collector Voltage**<br>VEC<br>IE= 200A, VGE= 0V<br>–<br>–<br>3.2<br>Volts||



* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. 

** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). 

**2** 

**==> picture [504 x 38] intentionally omitted <==**

## **Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272** 

## **CM200DU-24F Trench Gate Design Dual IGBTMOD™** 

200 Amperes/1200 Volts 

**Dynamic Electrical Characteristics, Tj = 25** ° **C unless otherwise specified** 

|**Dynamic Ele**|**ctrical Characteristic**|**s,Tj = 25**°**C u**|**nless otherwise specified**|||||
|---|---|---|---|---|---|---|---|
|**Characteristics**||**Symbol**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Units**|
|Input Capacitance||Cies||–|–|78|nf|
|Output Capacitance||Coes|VCE= 10V, VGE= 0V|–|–|3.4|nf|
|Reverse Transfer|Capacitance|Cres||–|–|2|nf|
|Inductive|Turn-on Delay Time|td(on)|VCC= 600V, IC= 200A,|–|–|300|ns|
|Load|Rise Time|tr|VGE1= VGE2= 15V,|–|–|80|ns|
|Switch|Turn-off Delay Time|td(off)|RG= 1.6�,|–|–|500|ns|
|Times|Fall Time|tf|Inductive Load|–|–|300|ns|
|Diode Reverse Recovery Time**||trr|Switching Operation|–|–|200|ns|
|Diode Reverse Recovery Charge**||Qrr|IE= 200A|–|12.2|–|µC|



**Thermal and Mechanical Characteristics, Tj = 25** ° **C unless otherwise specified** 

|**Characteristics**|**Symbol**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Units**|
|---|---|---|---|---|---|---|
|Thermal Resistance, Junction to Case|Rth(j-c)Q|Per IGBT 1/2 Module, TcReference|–||0.15|°C/W|
|||Point per Outline Drawing|||||
|Thermal Resistance, Junction to Case|Rth(j-c)D|Per FWDi 1/2 Module, TcReference|–|–|0.18|°C/W|
|||Point per Outline Drawing|||||
|Thermal Resistance, Junction to Case|Rth(j-c)'Q|Per IGBT 1/2 Module,|–|0.08||°C/W|
|||TcReference Point Under Chip|||||
|Contact Thermal Resistance|Rth(c-f)|Per Module, Thermal Grease Applied|–|0.020|–|°C/W|



** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). 

3 

**==> picture [504 x 38] intentionally omitted <==**

## **Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272** 

## **CM200DU-24F** 

## **Trench Gate Design Dual IGBTMOD™** 

200 Amperes/1200 Volts 

**==> picture [498 x 509] intentionally omitted <==**

**----- Start of picture text -----**<br>
COLLECTOR-EMITTER COLLECTOR-EMITTER<br>OUTPUT CHARACTERISTICS SATURATION VOLTAGE CHARACTERISTICS SATURATION VOLTAGE CHARACTERISTICS<br>(TYPICAL) (TYPICAL) (TYPICAL)<br>400300 Tj = 25 [o] C VGE = 20V1511 10 99.5 3 VGE = 15VTTjj = 25 = 125°C°C 45 Tj = 25°C<br>2<br>3<br>200 IC = 400A<br>8.5  2 IC = 200A<br>1<br>100 IC = 80A<br>8 1<br>0 0 0<br>0 1 2 3 4 0 100 200 300 400 0 6 8 10 12 14 16 18 20<br>COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES) GATE-EMITTER VOLTAGE, VGE, (VOLTS)<br>FREE-WHEEL DIODE HALF-BRIDGE<br>FORWARD CHARACTERISTICS CAPACITANCE VS. VCE SWITCHING CHARACTERISTICS<br>(TYPICAL) (TYPICAL) (TYPICAL)<br>10 [3] Tj = 25°C 10 [2] Cies 10 [3] td(off)tf<br>td(on)<br>10 [1] 10 [2]<br>tr<br>10 [2]<br>10 [0] Coes 10 [1] VCC = 600V<br>Cres VRGEG = 1.6  = ±15VΩ<br>VGE = 0V Tj = 125°C<br>Inductive Load<br>10 [1] 10 [-1] 10 [0]<br>0 1.0 2.0 3.0 4.0 10 [-1] 10 [0] 10 [1] 10 [2] 10 [1] 10 [2] 10 [3]<br>EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) COLLECTOR CURRENT, IC, (AMPERES)<br>TRANSIENT THERMAL<br>REVERSE RECOVERY CHARACTERISTICS IMPEDANCE CHARACTERISTICS<br>(TYPICAL) GATE CHARGE, VGE (IGBT & FWDi)<br>10 [-3] 10 [-2] 10 [-1] 10 [0] 10 [1]<br>10 [3] 10 [3] 20 10 [1]<br>VCC = 600V IC = 200A Per Unit Base<br>VGE = ±15V Rth(j-c) = 0.15°C/W (IGBT)<br>RInductive LoadTjG = 25 = 1.6 °CΩ Itrrrr 1612 VCC = 400VVCC = 600V 10 [0] RSingle PulseTCth(j-c) = 25 = 0.18°C °C/W (FWDi)<br>10 [2] 10 [2] 10 [-1] 10 [-1]<br>8<br>10 [-2] 10 [-2]<br>4<br>10 [1]<br>10 [1] 0 10 [-3] 10 [-3]<br>10 [1] 10 [2] 10 [3] 0 500 1000 1500 2000 2500 3000 10 [-5] 10 [-4] 10 [-3]<br>EMITTER CURRENT, IE, (AMPERES) GATE CHARGE, QG, (nC) TIME, (s)<br>, (AMPERES)C COLLECTOR-EMITTER , (VOLTS)CE(sat)  COLLECTOR-EMITTER<br>COLLECTOR CURRENT, I SATURATION VOLTAGE, V SATURATION VOLTAGE, VCE(sat), (VOLTS)<br>, (nF)<br>res<br>, C<br>, (AMPERES)E , Coes<br>ies<br> SWITCHING TIME, (ns)<br>EMITTER CURRENT, I CAPACITANCE, C<br>th(j-c)<br>, (ns)rr , (AMPERES)rr , (VOLTS)GE<br> • (NORMALIZED VALUE)<br>th<br> = R<br>th<br>Z<br>REVERSE RECOVERY TIME, t<br>GATE-EMITTER VOLTAGE, V<br> REVERSE RECOVERY CURRENT, I<br> NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z<br>**----- End of picture text -----**<br>


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