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CLA30E1200PB
Thyristor, 1.2 kV, 30 mA, 30 A, 47 A, TO-220AB, 3 Pins
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- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Thyristors - SCRs
- SVHC: No SVHC (12-Jan-2017)
- No. of Pins: 3Pins
- Product Range: -
- Thyristor Mounting: Through Hole
- Holding Current Max: 60mA
- On State RMS Current: 47A
- Thyristor Case Style: TO-220AB
- Average On State Current: 30A
- Gate Trigger Current Max: 30mA
- Gate Trigger Voltage Max: 1.3V
- Operating Temperature Max: 125°C
- Peak Non Repetitive Surge Current: 300A
- Peak Repetitive Off State Voltage: 1.2kV
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 1.37 € |
| Current stock | 25+ |
| Lead time | 30 days |
Datasheet
## **CS22-08io1M** ## **High Efficiency Thyristor** **VRRM** _**=**_ **800 V I TAV** _**=**_ **16 A VT** _**=**_ **1.27 V** ## Single Thyristor ## **Part number** ## **CS22-08io1M** Backside: isolated **==> picture [84 x 50] intentionally omitted <==** **----- Start of picture text -----**<br> 2 1<br>3<br>**----- End of picture text -----**<br> ## **Features / Advantages:** - Thyristor for line frequency - Planar passivated chip - Long-term stability ## **Applications:** - Line rectifying 50/60 Hz - Softstart AC motor control - DC Motor control - Power converter - AC power control - Lighting and temperature control ## **Package:** TO-220FP - Isolation Voltage: V~2500 - Industry standard outline - RoHS compliant - Epoxy meets UL 94V-0 - Soldering pins for PCB mounting - Base plate: Plastic overmolded tab - Reduced weight ## **Disclaimer Notice** Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20191129c © 2019 IXYS all rights reserved **CS22-08io1M** |**Thyristor**|**Thyristor**|**Ratings**|**Ratings**|**Ratings**|**Ratings**|**Ratings**| |---|---|---|---|---|---|---| |**Symbol**<br>**Definition**<br>**Conditions**|||**min.**|**typ.**|**max.**|**Unit**| |**V**<br>**RSM/DSM**<br>_max. non-repetitive reverse/forward blocking voltage_||T = 25°C<br>VJ|||900|V| |**V**<br>**RRM/DRM**<br>_max. repetitive reverse/forward blocking voltage_||T = 25°C<br>VJ|||800|V| |**I**<br>**R/D**<br>_reverse current, drain current_|V = V<br>V = V<br>800<br>800<br>R/D<br>R/D|T = 25°C<br>VJ<br>T = °C<br>VJ<br>125|||10<br>2|mA<br>µA| |**VT**<br>_forward voltage drop_|I = A<br>T<br>30<br>I = A<br>60<br>T|T = 25°C<br>VJ|||1.30<br>1.59|V<br>V| ||I = A<br>T<br>30<br>I = A<br>60<br>T|T = °C<br>VJ<br>125|||1.27<br>1.65|V<br>V| |**I**<br>**I**<br>_RMS forward current_<br>**T(RMS)**<br>**TAV**<br>_average forward current_|T = °C<br>C<br>90<br>180° sine|T = °C<br>VJ<br>150|||16<br>25|A<br>A| |**VT0**<br>**rT**<br>_threshold voltage_<br>_slope resistance_<br>_for power loss calculation only_||T = °C<br>VJ<br>150|||0.86<br>13.2|V<br>mΩ| |**R**<br>**thJC**<br>_thermal resistance junction to case_|||||2.5|K/W| |**RthCH**<br>_thermal resistance case to heatsink_||||0.5||K/W| |**Ptot**<br>_total power dissipation_||T = 25°C<br>C|||50|W| |**ITSM**<br>_max. forward surge current_|t = 10 ms; (50 Hz), sine<br>t = 8,3 ms; (60 Hz), sine|T = 45°C<br>VJ<br>V = 0 V<br>R|||300<br>325|A<br>A| ||t = 10 ms; (50 Hz), sine|T = °C<br>VJ<br>150|||255<br>275|A<br>A| ||<br>t = 8,3 ms; (60 Hz), sine|V = 0 V<br>R||||| |**I²t**<br>_value for fusing_|t = 10 ms; (50 Hz), sine<br>t = 8,3 ms; (60 Hz), sine|T = 45°C<br>V = 0 V<br>VJ<br>R|||450<br>440|A²s<br>A²s| ||t = 10 ms; (50 Hz), sine<br>t = 8,3 ms; (60 Hz), sine|T = °C<br>150<br>V = 0 V<br>VJ<br>R|||325<br>315|A²s<br>A²s| |**CJ**<br>_junction capacitance_|V = V<br>400<br>f = 1 MHz<br>R|T = 25°C<br>VJ||13||pF| |**PGM**<br>_max. gate power dissipation_<br>**PGAV**<br>_average gate power dissipation_|t = 30 µs<br>P<br>t =<br>P<br>300 µs|T = °C<br>C<br>150|||10<br>5<br>0.5|W<br>W<br>W| |**(di/dt)cr**<br>_critical rate of rise of current_|repetitive, I =<br>TVJ = 125°C; f = 50 Hz<br>t = µs;<br>I<br>A; V =⅔V<br>90 A<br>T<br>P<br>G =<br>0.3<br>di /dt<br>A/µs;<br>G<br>= 0.3<br>DRM<br>non-repet., I =<br>30 A<br>T<br>200|repetitive, I =<br>90 A<br>T|||150|A/µs| ||||||500|A/µs| |**(dv/dt)**<br>_critical rate of rise of voltage_<br>**cr**|T<br>= 125°C<br>R =∞; method 1 (linear voltage rise)<br>VJ<br>V =⅔VDRM<br>GK||||500|V/µs| |**VGT**<br>_gate trigger voltage_<br>**IGT**<br>_gate trigger current_|V = 6 V<br>T<br>=<br>°C<br>25<br>D<br>VJ<br>T<br>=<br>°C<br>-40<br>VJ<br>V = 6 V<br>T<br>=<br>°C<br>25<br>D<br>VJ<br>T<br>=<br>°C<br>-40<br>VJ||||1.3<br>30<br>1.6<br>50|V<br>mA<br>V<br>mA| |**VGD**<br>_gate non-trigger voltage_<br>**IGD**<br>_gate non-trigger current_|T<br>=<br>°C<br>VJ<br>V =⅔V<br>D<br>DRM<br>150||||0.2<br>1|V<br>mA| |_latching current_<br>**IL**|T<br>=<br>°C<br>VJ<br>25<br>t<br>µs<br>p =<br>10<br>I<br>A;<br>=<br>03<br>di /dt<br>A/s<br><br>=<br>03||||90|mA| ||G <br>.<br> <br>µ<br>G<br><br>.|||||| |_holding current_<br>**IH**|T<br>=<br>°C<br>VJ<br>25<br>V = 6 V<br>D<br>R =∞<br>GK||||60|mA| |_gate controlled delay time_<br>**tgd**|T<br>=<br>°C<br>VJ<br>25<br>I<br>A;<br>G =<br>0.3<br>di /dt<br>A/µs<br>G<br>=<br>0.3<br>V = ½ V<br>D<br>DRM||||2|µs| |_turn-off time_<br>**tq**|T<br>=<br>°C<br>VJ<br>di/dt =<br>A/µs<br>10<br>dv/dt =<br>V/µs<br>20<br>V =<br>R<br>100 V; I<br>A;<br>T =<br>30<br>V =⅔VDRM<br>t<br>µs<br>p = 200<br>125|||150||µs| IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20191129c © 2019 IXYS all rights reserved **CS22-08io1M** |**Ratings**<br>**Package**<br>**TO-220FP**|**Ratings**<br>**Package**<br>**TO-220FP**|**Ratings**<br>**Package**<br>**TO-220FP**|**Ratings**<br>**Package**<br>**TO-220FP**|**Ratings**<br>**Package**<br>**TO-220FP**|**Ratings**<br>**Package**<br>**TO-220FP**| |---|---|---|---|---|---| |**Symbol**<br>**Definition**<br>**Conditions**||**min.**|**typ.**|**max.**|**Unit**| |**I RMS**<br>_RMS current_<br>per terminal||||35|A| |**TVJ**<br>_virtual junction temperature_||-55||150|°C| |**Top**<br>_operation temperature_||-55||125|°C| |**Tstg**<br>_storage temperature_||-55||150|°C| |**Weight**|||2||g| |**M D**<br>_mounting torque_<br>**FC**<br>_mounting force with clip_||0.4<br>20||0.6<br>60|Nm<br>N| |**dSpp/App**<br>_creepage distance on surface | striking distance through air_<br>**dSpb/Apb**<br>_terminal to backside_<br>_terminal to terminal_|1.6<br>2.5|1.0|||mm<br>mm| |||2.5|||| |**V**<br>t = 1 second<br>t = 1 minute<br>_isolation voltage_<br>50/60 Hz, RMS; I≤1 mA<br>ISOL<br>**ISOL**||2500||V<br>V|| |||2100|||| **==> picture [192 x 142] intentionally omitted <==** **----- Start of picture text -----**<br> Product Marking<br>Part Number XXXXXX<br>Logo yywwZ<br>DateCode<br>Lot# 123456<br>Location<br>**----- End of picture text -----**<br> **==> picture [215 x 78] intentionally omitted <==** |**rdering**||**Ordering Number**|**Marking on Product**|**Marking on Product**|**Delivery Mode**|**Quantity**|**Code No.**| |---|---|---|---|---|---|---|---| |tandard||CS22-08io1M|CS22-08io1M||Tube|50|500475| ||||||||| |||**Similar Part**|**Package**|**Voltage class**|||| |||CS22-12io1M|TO-220ABFP(3)|1200|||| |||CLA16E800PN|TO-220ABFP(3)|1200|||| |||CMA30E1600PN|TO-220ABFP(3)|1600|||| |||CLA30E1200PB|TO-220AB(3)|1200|||| ||||||||| |||CLA30E1200PC|TO-263AB(D2Pak) (2)|1200|||| |||CLA30E1200HB|TO-247AD(3)|1200|||| |||CMA30E1600PB|TO-220AB(3)|1600|||| |||CMA30E1600PZ|TO-263AB(D2Pak) (2HV)|1600|||| |**Equivalent Circuits for Simulation**<br>T =<br>VJ<br>°C<br>_* on die level_<br>150|**Equivalent Circuits for Simulation**<br>T =<br>VJ<br>°C<br>_* on die level_<br>150| |---|---| |I|V0<br>~~R~~0| IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20191129c © 2019 IXYS all rights reserved **CS22-08io1M** ## **Outlines TO-220FP** |**Outlines**<br>**TO-220FP**|||||| |---|---|---|---|---|---| |ØP<br>A<br>A1<br>H<br>A2<br>Q<br>L1<br>D<br>E<br>L<br>b<br>b1<br>c<br>e<br>1<br>2<br>3|||||| ||Dim.|Millimeters||Inches|| |||min|max|min|max| ||A|4.50|4.90|0.177|0.193| ||A1|2.34|2.74|0.092|0.108| ||A2|2.56|2.96|0.101|0.117| ||b|0.70|0.90|0.028|0.035| ||c|0.45|0.60|0.018|0.024| ||D|15.67|16.07|0.617|0.633| ||E|9.96|10.36|0.392|0.408| ||e|2.54 BSC||0.100 BSC|| ||H|6.48|6.88|0.255|0.271| ||L|12.68|13.28|0.499|0.523| ||L1|3.03|3.43|0.119|0.135| ||ØP|3.08|3.28|0.121|0.129| ||Q|3.20|3.40|0.126|0.134| ||||||| **==> picture [509 x 168] intentionally omitted <==** **----- Start of picture text -----**<br> 2 1<br>3<br>**----- End of picture text -----**<br> IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20191129c © 2019 IXYS all rights reserved **CS22-08io1M** ## **Thyristor** **==> picture [508 x 660] intentionally omitted <==** **----- Start of picture text -----**<br> 60 280 1000<br>50 Hz, 80% VRRM V R = 0 V<br>50<br>240<br>40 ITSM TVJ = 45°C I [2] t<br>IT 200<br>30 [A] [A [2] s] TVJ = 45°C<br>[A] 160<br>20 TVJ = 125°C TVJ = 125°C<br>TVJ = 150°C<br>100<br>125°C 120<br>10<br>TVJ = 25°C<br>0 80<br>0,5 1,0 1,5 2,0 0,001 0,01 0,1 1 1 2 3 4 5 6 7 8 910<br>VT [V] t [s] t [ms]<br>Fig. 1 Forward characteristics Fig. 2 Surge overload current Fig. 3 I [2] t versus time (1-10 s)<br>ITSM: crest value, t: duration<br>4 10 [2] 30<br>I GD : T VJ = 125°C<br>C<br>B 25<br>180° sine<br>3<br>B TVJ = 125°C<br>10 [1] 20<br>VG B t I<br>gd T(AV)M<br>2 15<br>[V] [A]<br>[µs] lim.<br>10 [0] 10<br>1<br>I GD : T VJ = 25°C typ. 5<br>A<br>0 10 [-1] 0<br>0 25 50 75 10 [-2] 10 [-1] 10 [0] 10 [1] 0 25 50 75 100 125 150 175<br>IG [mA] IG [A] Tcase [°C]<br>Fig. 4 Gate voltage & gate current Fig. 5 Gate controlled delay time tgd Fig. 6 Max. forward current at<br>case temperature<br>Triggering: A = no; B = possible; C = safe<br>24<br>dc 1 = R0.6thHA i Rthi (K/W) ti (s)<br>20 0.5 0.8 3 1 0.015 0.0011<br>0.4 1.0 2 0.124 0.0019<br>0.33 2.0 3 0.395 0.07<br>P(AV) 16 0.17 0.08 4.08.0 ZthJC 2 4 5 1.606 0.86 1.1 4.9<br>12<br>[K/W]<br>[W]<br>8<br>1<br>4<br>0 0<br>0 5 10 15 20 0 50 100 150 0,001 0,01 0,1 1 10 100<br>IT(AV) [A] Tamb [°C] t [s]<br>Fig. 8 Transient thermal impedance junction to case<br>Fig. 7a Power dissipation versus direct output current<br>Fig. 7b and ambient temperature<br>-40°C<br> =<br>VJ<br> = 0°C : T<br>: TVJ IGT<br>IGT<br> = 25°C<br>VJ<br>: T<br>IGT<br>**----- End of picture text -----**<br> IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20191129c © 2019 IXYS all rights reserved **CS22-08io1M** IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20191129c © 2019 IXYS all rights reserved
Updated at April 22, 2026
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