# Silicon Carbide Schottky Diode, Z-REC, Single, 1.2 kV, 54 A, 99 nC, TO-247

![Product image](https://novapart.co/image/farnell:2850758/)

**URL**: https://novapart.co/products/C4D20120H/silicon-carbide-schottky-diode-z-rec-single-12-kv
**SKU**: C4D20120H
**Manufacturer**: WOLFSPEED
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Schottky Diodes || Silicon Carbide Schottky Diodes
**Price**: €9.2600
**Stock**: 10+
**Lead Time**: 358 days (indicative)

## Description

Product Range:Z-REC Series; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:1.2kV; Continuous Forward Current If:54A; Total Capacitive Charge Qc:99nC; Diode Case S

## Specifications

| Parameter | Value |
|---|---|
| Svhc | To Be Advised |
| No. Of Pins | 2 Pin |
| Product Range | Z-REC |
| Qualification | - |
| Diode Mounting | Through Hole |
| Diode Case Style | TO-247 |
| Diode Configuration | Single |
| Average Forward Current | 54A |
| Total Capacitive Charge | 99nC |
| Operating Temperature Max | 175°C |
| Repetitive Peak Reverse Voltage | 1.2kV |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2850758/)

- CREE+ **C4D20120H V** =        1200 V 

- **Silicon Carbide Schottky Diode RRM** _Z-Rec[®]_ Rectifier **IF (TC=135˚C)** =             26 A **Qc** =          99 nC 

- ~~e~~ **Features** ~~e~~ **Package** • 1.2kV Schottky Rectifier • Zero Reverse Recovery Current • High-Frequency Operation • Temperature-Independent Switching • Extremely Fast Switching • Positive Temperature Coefficient on VF • Increased Creepage/Clearance Distance me y TO-247-2 

- **Benefits** PIN 1 

- • Replace Bipolar with Unipolar Rectifiers CASE 

- • Essentially No Switching Losses PIN 2 

- ~~me~~ 

- **Benefits** PIN 1 

- • Replace Bipolar with Unipolar Rectifiers • Essentially No Switching Losses PIN 2 

- ~~me~~ • Higher Efficiency 

- Reduction of Heat Sink Requirements 

- Parallel Devices Without Thermal Runaway 

## **Applications** 

- Switch Mode Power Supplies (SMPS) 

|**Part Number**|**Package**|**Marking**|
|---|---|---|
|C4D20120H|TO-247-2|C4D20120|



- Boost diodes in PFC or DC/DC stages 

- Free Wheeling Diodes in Inverter stages 

- AC/DC converters 

**Maximum Ratings** (TC=25°C unless otherwise specified) 

|**Symbol**<br>~~So~~|**Parameter**<br>~~So~~|**Value**<br>~~So~~|**Unit**<br>~~So~~|**Test Conditions**<br>~~So~~|**Note**<br>~~So~~|
|---|---|---|---|---|---|
|VRRM<br>~~So~~|Repetitive Peak Reverse Voltage<br>~~So~~|1200<br>~~So~~|V<br>~~So~~|~~So~~|~~So~~|
|VRSM|Surge Peak Reverse Voltage|1300|V|||
|VR|DC Peak Reverse Voltage|1200|V|||
|IF|Continuous Forward Current|54<br>26<br>20|A|TC=25˚C<br>TC=135˚C<br>TC=156˚C|Fig. 3|
|IFRM|Repetitive Peak Forward Surge Current|86<br>56|A|TC=25˚C, tP=10 ms, Half Sine Pulse<br>TC=110˚C, tP=10 ms, Half Sine Pulse||
|IFSM|Non-Repetitive Forward Surge Current|130<br>104|A|TC=25˚C, tP=10 ms, Half Sine Pulse<br>TC=110˚C, tP=10 ms, Half Sine Pulse|Fig. 8|
|IF,Max|Non-Repetitive Peak Forward Current|1150<br>950|A|TC=25˚C, tP=10ms, Pulse<br>TC=110˚C, tP=10ms, Pulse|Fig. 8|
|Ptot|Power Dissipation|246<br>106.5|W|TC=25˚C<br>TC=110˚C|Fig. 4|
|dV/dt|Diode dV/dt ruggedness|200|V/ns|VR=0-960V||
|∫i2dt|i2t value|84.5<br>54|A2s|TC=25˚C, tP=10 ms<br>TC=110˚C, tP=10 ms||
|TJ, Tstg<br>~~ee~~|Operating Junction and Storage Temperature<br>~~ee~~|-55 to<br>+175<br>ee|˚C<br>ee|~~eee~~|~~eee~~|
|~~ee~~|TO-247 Mounting Torque<br>~~ee~~|1<br>8.8<br>ee|Nm<br>lbf-in<br>ee|M3 Screw<br>6-32 Screw<br>~~eee~~|~~eee~~|



**1** C4D20120H Rev. -, 02-2018 

## **Electrical Characteristics** 

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**----- Start of picture text -----**<br>
Symbol Parameter Typ. Max. Unit Test Conditions Note<br>**----- End of picture text -----**<br>


|**Symbol**|**Parameter**|**Typ.**|**Max.**|**Unit**|**Test Conditions**|**Note**|
|---|---|---|---|---|---|---|
|VF|Forward Voltage|1.5<br>2.2|1.8<br>3|V|IF= 20 A  TJ=25°C<br>IF= 20 A  TJ=175°C|Fig. 1|
|IR|Reverse Current|35<br>65|200<br>400|μA|VR= 1200 V  TJ=25°C<br>VR= 1200 V  TJ=175°C|Fig. 2|
||||||VR= 800 V, IF= 20A||
|QC|Total Capacitive Charge|99||nC|d_i_/d_t_= 200 A/μs|Fig. 5|
||||||TJ= 25°C||
|C|Total Capacitance|1500<br>93<br>67||pF|VR= 0 V, TJ= 25°C, f = 1 MHz<br>VR= 400 V, TJ= 25˚C, f = 1 MHz<br>VR= 800 V, TJ= 25˚C, f = 1 MHz|Fig. 6|
|EC|Capacitance Stored Energy|28||μJ|VR= 800 V|Fig. 7|



Note: This is a majority carrier diode, so there is no reverse recovery charge. 

## **Thermal Characteristics** 

|**Symbol**|**Parameter**|**Typ.**|**Unit**|**Note**|
|---|---|---|---|---|
|RθJC|Thermal Resistance from Junction to Case|0.61|°C/W|Fig. 9|



## **Typical Performance** 

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**----- Start of picture text -----**<br>
40 1<br>[T] J [=-55°C] 0.9<br>35 [T] J [= 25°C]<br>  TJ= 75°C<br>  TJ =125°C 0.8<br>30 TJ =175°C<br>0.7<br>25<br>0.6<br>20 0.5<br>0.4<br>15<br>0.3 [T] J [=-55°C]<br>10 [T] J [= 25°C]<br>0.2   T  TJJ= 75°C   =125°C<br>5 TJ =175°C<br>0.1<br>0 0<br>0 1 2 3 4 0 500 1000 1500<br>VF (V) VR (V)<br> (A)  (mA)<br>F R<br>I I<br>**----- End of picture text -----**<br>


Figure 1. Forward Characteristics 

Figure 2. Reverse Characteristics 

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C4D20120H Rev. -, 02-2018 

**2** 

## **Typical Performance** 

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**----- Start of picture text -----**<br>
180 280<br>160<br>240<br>140   20% Duty [10% Duty]<br>  30% Duty 200<br>  50% Duty<br>120<br>  70% Duty<br>  DC<br>160<br>100<br>80 120<br>60<br>80<br>40<br>40<br>20<br>0 0<br>25 50 75 100 125 150 175 25 50 75 100 125 150 175<br>T  ˚C T  ˚C<br>C C<br>Figure 3. Current Derating Figure 4. Power Derating<br>140 1600<br>120 1400<br>1200<br>100<br>1000<br>80<br>800<br>60<br>600<br>40<br>400<br>20<br>200<br>0 0<br>0 200 400 600 800 1000 1200 0.1 1 10 100 1000<br>VR (V) VR (V)<br> (A)<br> (W)<br>Tot<br>F(peak) P<br>I<br> (nC)<br>c<br>Q C (pF)<br>**----- End of picture text -----**<br>


Figure 5. Recovery Charge vs. Reverse Voltage 

Figure 6. Capacitance vs. Reverse Voltage 

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C4D20120H Rev. -, 02-2018 

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## **Typical Performance** 

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**----- Start of picture text -----**<br>
50.050<br>45.045<br>40.040<br>35.035<br>30.030<br>25.025<br>20.020<br>15.015<br>10.010<br>5.05<br>0.00<br>   0            200          400           600          800         10000 200 400 600 800 1000<br>VR Reverse Voltage (V)<br>VR (V)<br>J)<br>m<br>(<br>C<br>E<br>apacitive Energy (uJ)<br>C<br>C<br>E<br>**----- End of picture text -----**<br>


Figure 7. Typical Capacitance Stored Energy 

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**----- Start of picture text -----**<br>
10000 10000<br>1000 1000<br>100 100 [T] J_initial  [= 25°C]<br>  TJ_initial = 110°C<br>10 10<br>   1E-05                 1E-04                   1E-03                 1E-02 1.E-05 1.E-04 1.E-03 1.E-02<br>t tp(s) p (s)<br>(A)  (A)<br>FSM FSM<br>I I<br>**----- End of picture text -----**<br>


Figure 8. Non-Repetitive Peak Forward Surge Current versus Pulse Duration (sinusoidal waveform) 

**==> picture [392 x 270] intentionally omitted <==**

**----- Start of picture text -----**<br>
 1<br>0.5<br>0.3<br>100E-3<br>0.1<br>0.05<br>10E-3 0.02<br>0.01<br>SinglePulse<br>1E-3<br>1E-6 10E-6 100E-6 1E-3 10E-3 100E-3  1<br>Time, t T (Sec) p (s)<br>C/W)<br>o<br> (<br>thJC<br>Thermal Resistance (˚C/W)<br>Junction To Case Impedance, Z<br>**----- End of picture text -----**<br>


Figure 9. Transient Thermal Impedance 

**==> picture [176 x 44] intentionally omitted <==**

C4D20120H Rev. -, 02-2018 

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## **Package Dimensions** 

## Package TO-247-2 

|**POS**<br>**Inches**<br>**Min**<br>**Max**<br>A<br>.190<br>.205<br>A1<br>.087<br>.102<br>A2<br>.059<br>.098<br>b<br>.039<br>.055<br>b2<br>.065<br>.094<br>~~ee~~<br>~~a~~<br>~~a~~<br>~~ee~~<br>~~ee~~<br> ~~**ee** ~~~~**ee** ~~~~**ee** ~~|**Millimeters**<br>**Min**<br>**Max**<br>4.70<br>5.31<br>2.21<br>2.59<br>1.50<br>2.49<br>0.99<br>1.40<br>1.65<br>2.39<br>~~ee~~<br>~~ee~~<br>~~ee~~<br> ~~**ee** ~~~~**ee**~~|
|---|---|
|c<br>.015<br>.035<br>D<br>.819<br>.845<br>D1<br>.515<br>-<br>D2<br>.020<br>.053<br>E<br>.620<br>.640<br>E1<br>.530<br>-<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~es~~<br>~~es~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|0.38<br>0.89<br>20.80<br>21.46<br>13.08<br>-<br>0.51<br>1.35<br>15.49<br>16.26<br>13.46<br>-<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|
|E2<br>.135<br>.157<br>e<br>.214<br>ØK<br>.010<br>L<br>.780<br>.800<br>L1<br>-<br>.177<br>ØP<br>.140<br>.144<br>ØP1<br>.278<br>.291<br>Q<br>.212<br>.244<br>S<br>.243<br>W<br>-<br>.006<br>~~es~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee ee ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~es~~<br>~~es~~|3.43<br>3.99<br>5.44<br>0.25<br>19.81<br>20.32<br>-<br>4.50<br>3.56<br>3.66<br>7.06<br>7.39<br>5.38<br>6.20<br>6.17<br>-<br>0.15<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br> ~~ee~~<br>~~ee~~<br> ~~ee~~|



PIN 1 

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CASE<br>PIN 2<br>**----- End of picture text -----**<br>


## **Recommended Solder Pad Layout** 

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**----- Start of picture text -----**<br>
all units are in inches .4<br>TO-247-2<br>**----- End of picture text -----**<br>


|**Part Number**|**Package**|**Marking**|
|---|---|---|
||||
|C4D20120H|TO-247-2|C4D20120|



**Note: Recommended soldering profiles can be found in the applications note here:** http://www.wolfspeed.com/power_app_notes/soldering 

C4D20120H Rev. -, 02-2018 

**5** 

## **Diode Model** 

VfT = VT+If*RT 

VT = 0.97+(TJ* -1.40*10[-3] ) RT = 0.023+(TJ* 2.71*10[-4] ) **Note: Tj = Diode Junction Temperature In Degrees Celsius, valid from 25°C to 175°C** 

**==> picture [85 x 21] intentionally omitted <==**

**----- Start of picture text -----**<br>
VT  RT<br>**----- End of picture text -----**<br>


## **Notes** 

- **RoHS Compliance** 

The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Wolfspeed representative or from the Product Ecology section of our website at http:// www.wolfspeed.com/power/tools-and-support/product-ecology. 

## **• REACh Compliance** 

REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. 

- This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control systems. 

## **Related Links** 

- Cree SiC Schottky diode portfolio: http://www.wolfspeed.com/Power/Products#SiCSchottkyDiodes 

- Schottky diode Spice models: http://www.wolfspeed.com/power/tools-and-support/DIODE-model-request2 

- SiC MOSFET and diode reference designs: http://go.pardot.com/l/101562/2015-07-31/349i 

Copyright © 2018 Cree, Inc. All rights reserved. 

The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. 

Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power 

C4D20120H Rev. -, 02-2018 

**6** 



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- [Supplier page](https://es.farnell.com/wolfspeed/c4d20120h/sic-schottky-diode-single-54a/dp/2850758)
---

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