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C4D20120A
Silicon Carbide Schottky Diode, Single, 1.2 kV, 53.5 A, 99 nC, TO-220
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- Manufacturer: WOLFSPEED
- Product type: Silicon Carbide Schottky Diodes
- Product Range:-; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:1.2kV; Continuous Forward Current If:53.5A; Total Capacitive Charge Qc:99nC; Diode Case Style:TO-22
- SVHC: No SVHC (17-Dec-2014)
- No. of Pins: 2 Pin
- Product Range: -
- Qualification: -
- Diode Case Style: TO-220
- Diode Configuration: Single
- Average Forward Current: 53.5A
- Total Capacitive Charge: 99nC
- Operating Temperature Max: 175°C
- Repetitive Peak Reverse Voltage: 1.2kV
| Delivery and price | |
|---|---|
| Units per pack | 200 |
| Price | 11.22 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**C4D20120A V** = 1200 V **Silicon Carbide Schottky Diode RRM IF (TC=135˚C)** = 25.5 A _Z-Rec[®]_ RectifieR **Qc** = 99 nC **Features Package** ~~OL~~ • 1.2kV Schottky Rectifier • Zero Reverse Recovery Current
- High-Frequency Operation
- Temperature-Independent Switching
- Extremely Fast Switching
## **Benefits**
TO-220-2
- Replace Bipolar with Unipolar Rectifiers
- Essentially No Switching Losses
- Higher Efficiency
- Reduction of Heat Sink Requirements
- Parallel Devices Without Thermal Runaway
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PIN 1<br>CASE<br>PIN 2<br>> »<br>**----- End of picture text -----**<br>
## **Applications**
- Switch Mode Power Supplies
|**Symbol**<br>~~oy~~|**Parameter**<br>~~oy~~|**Value**<br>~~oy~~|**Unit**<br>|**Test Conditions**<br>~~—~~|**Note**<br>~~—~~|
|---|---|---|---|---|---|
|VRRM<br>~~oy~~|Repetitive Peak Reverse Voltage<br>~~oy~~|1200<br>~~oy ~~|V<br>|~~—~~|~~—~~|
|VRSM<br>~~or~~|Surge Peak Reverse Voltage<br>~~or~~|1300<br>~~or~~|V<br>~~or~~|~~or~~|~~or~~|
|VR<br>~~or~~|DC Peak Reverse Voltage<br>~~or~~|1200<br>~~or~~<br>~~ee~~|V<br>~~or~~|~~or~~<br>~~ee~~|~~or~~<br>~~ee~~|
|IF<br>~~ee~~|Continuous Forward Current<br>~~ee~~|53.5<br>25.5<br>20<br>~~ee~~<br>~~ee~~|A<br>~~ee~~|TC=25˚C<br>TC=135˚C<br>TC=150˚C<br>~~ee~~<br>~~ee~~|~~ee~~<br>~~ee~~|
|IFRM<br>~~a~~|Repetitive Peak Forward Surge Current<br>~~a~~|91<br>61<br>~~ee~~<br>~~a~~|A<br>~~a~~|TC=25˚C, tP=10 ms, Half Sine Pulse<br>TC=110˚C, tP=10 ms, Half Sine Pulse<br>~~ee~~<br>~~a~~|~~ee~~<br>~~a~~|
|IFSM<br>~~a~~|Non-Repetitive Forward Surge Current<br>~~a~~|130<br>110<br>~~a~~|A<br>~~a~~|TC=25˚C, tP=10 ms, Half Sine Pulse<br>TC=110˚C, tP=10 ms, Half Sine Pulse<br>~~a~~|~~a~~|
|IF,Max<br>~~ee~~|Non-Repetitive Peak Forward Current<br>~~ee~~|1150<br>950<br>~~ee~~|A<br>~~ee~~|TC=25˚C, tP=10ms, Pulse<br>TC=110˚C, tP=10ms, Pulse<br>~~ee~~|~~ee~~|
|Ptot<br>~~ee~~|Power Dissipation<br>~~ee~~|242<br>104<br>~~ee~~|W<br>~~ee~~|TC=25˚C<br>TC=110˚C<br>~~ee~~|~~ee~~|
|TJ<br>~~——~~|Operating Junction Range<br>~~——~~|-55 to<br>+175<br>~~——~~|˚C<br>~~——~~|~~——~~|~~——~~|
|Tstg<br>~~——~~|Storage Temperature Range<br>~~——~~|-55 to<br>+135<br>~~——~~|˚C<br>~~——~~|~~——~~|~~——~~|
|~~——~~|TO-220 Mounting Torque<br>~~——~~|1<br>8.8<br>~~——~~|Nm<br>lbf-in<br>~~——~~|M3 Screw<br>6-32 Screw<br>~~——~~|~~——~~|
- Power Factor Correction
- Motor Drives
**Maximum Ratings** (TC=25°C unless otherwise specified)
C4D20120A Rev. C
**1**
## **Electrical Characteristics**
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Symbol Parameter Typ. Max. Unit Test Conditions Note<br>**----- End of picture text -----**<br>
|**Symbol**|**Parameter**|**Typ.**|**Max.**|**Unit**|**Test Conditions**|**Note**|
|---|---|---|---|---|---|---|
|VF|Forward Voltage|1.5<br>2.2|1.8<br>3|V|IF= 20 A TJ=25°C<br>IF= 20 A TJ=175°C||
|IR|Reverse Current|35<br>65|200<br>400|μA|VR= 1200 V TJ=25°C<br>VR= 1200 V TJ=175°C||
||||||VR= 800 V, IF= 20A||
|QC|Total Capacitive Charge|99||nC|d_i_/d_t_= 200 A/μs||
||||||TJ= 25°C||
|C|Total Capacitance|1500<br>93<br>67||pF|VR= 0 V, TJ= 25°C, f = 1 MHz<br>VR= 400 V, TJ= 25˚C, f = 1 MHz<br>VR= 800 V, TJ= 25˚C, f = 1 MHz||
Note:
1. This is a majority carrier diode, so there is no reverse recovery charge.
## **Thermal Characteristics**
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Symbol Parameter Typ. Max. Unit Test Conditions Note<br>Thermal Resistance from Junction<br>RθJC to Case 0.62 °C/W<br>Typical Performance<br>40 1<br>[T] J [=-55°C] 0.9<br>35 [T] J [= 25°C]<br> TJ= 75°C<br> TJ =125°C 0.8<br>30 TJ =175°C<br>0.7<br>25<br>0.6<br>20 0.5<br>0.4<br>15<br>0.3 [T] J [=-55°C]<br>10 [T] J [= 25°C]<br>0.2 T TJJ= 75°C =125°C<br>5 TJ =175°C<br>0.1<br>0 0<br>0 1 2 3 4 0 500 1000 1500<br>VF (V) VR (V)<br> (A) (mA)<br>F R<br>I I<br>**----- End of picture text -----**<br>
Figure 1. Forward Characteristics
Figure 2. Reverse Characteristics
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C4D20120A Rev. C
**2**
## **Typical Performance**
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180<br>160<br>140 20% Duty [10% Duty]<br> 30% Duty<br> 50% Duty<br>120<br> 70% Duty<br> DC<br>100<br>80<br>60<br>40<br>20<br>0<br>25 50 75 100 125 150 175<br>T ˚C<br>C<br>Figure 3. Current Derating<br>140<br>120<br>100<br>80<br>60<br>40<br>20<br>0<br>0 200 400 600 800 1000 1200<br>VR (V)<br> (A)<br>F(peak)<br>I<br>Qrr (nC)<br>**----- End of picture text -----**<br>
Figure 5. Recovery Charge vs. Reverse Voltage
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250<br>200<br>150<br>100<br>50<br>0<br>25 50 75 100 125 150 175<br>T ˚C<br>C<br>Figure 4. Power Derating<br>1600<br>1400<br>1200<br>1000<br>800<br>600<br>400<br>200<br>0<br>0.1 1 10 100 1000<br>VR (V)<br> (W)<br>Tot<br>P<br>C (pF)<br>**----- End of picture text -----**<br>
Figure 6. Capacitance vs. Reverse Voltage
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**3**
C4D20120A Rev. C
## **Typical Performance**
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50.050<br>45.045<br>40.040<br>35.035<br>30.030<br>25.025<br>20.020<br>15.015<br>10.010<br>5.05<br>0.00<br> 0 200 400 600 800 10000 200 400 600 800 1000<br>VR Reverse Voltage (V)<br>VR (V)<br>J)<br>m<br>(<br>C<br>E<br>apacitive Energy (uJ)<br>C<br>C<br>E<br>**----- End of picture text -----**<br>
Figure 7. Typical Capacitance Stored Energy
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10000 10000<br>1000 1000<br>100 100 [T] J [= 25°C]<br>TJ = 110°C<br>10 10<br> 1E-05 1E-04 1E-03 1E-02 1.E-05 1.E-04 1.E-03 1.E-02<br>t tp(s) p (s)<br>(A) (A)<br>FSM FSM<br>I I<br>**----- End of picture text -----**<br>
Figure 8. Non-Repetitive Peak Forward Surge Current versus Pulse Duration (sinusoidal waveform)
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1<br>0.5<br>0.3<br>100E-3<br>0.1<br>0.05<br>0.02<br>SinglePulse<br>10E-3<br>0.01<br>1E-3<br>1E-6 10E-6 100E-6 1E-3 10E-3 100E-3 1<br>T (Sec)<br>Thermal Resistance (˚C/W)<br>**----- End of picture text -----**<br>
Figure 9. Transient Thermal Impedance
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C4D20120A Rev. C
**4**
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||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
|Package Dimensions|
|Inches|Millimeters|
|Package TO-220-2|POS|Min|Max|Min|Max|
|A|.381|.410|9.677|10.414|
|B|.235|.255|5.969|6.477|
|———|
|Oe|oe|A|F|F|P|————a|C|.100|.120|2.540|3.048|
|J|Q|D|.223|.337|5.664|8.560|
|C|E|.590|.615|14.986|15.621|
|B|
|D|X|F|.143|.153|3.632|3.886|
|S|
|E|G|1.105|1.147|28.067|29.134|
|Fey|ee|——|
|H|.500|.550|12.700|13.970|
|Y|
|1 2|G|J|R 0.197|R 0.197|
|im|eS|—————|
|T|U|L|.025|.036|.635|.914|
|Z|
|M|.045|.055|1.143|1.397|
|H|N|.195|.205|4.953|5.207|
|es|ee|
|P|.165|.185|4.191|4.699|
|:||-||||:|V|||———a|[ee]|Q|.048|.054|1.219|1.372|
|L|W|S|3°|6°|3°|6°|
|M|-|N|7|
|T|3°|6°|3°|6°|
|U|3°|6°|3°|6°|
|ee|
|V|.094|.110|2.388|2.794|
|ee|
|W|.014|.025|.356|.635|
|eeeees|
|X|3°|5.5°|3°|5.5°|
|Y|.385|.410|9.779|10.414|
|PIN 1|
|CASE|z|.130|.150|3.302|3.810|
|es|
|PIN 2|NOTE:|
|5|°|oo|
|1. Dimension L, M, W apply for Solder Dip|
|Finish|
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## **Recommended Solder Pad Layout**
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||||
|---|---|---|
|Part Number|Package|Marking|
|C4D20120A|TO-220-2|C4D20120|
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## TO-220-2
**Note: Recommended soldering profiles can be found in the applications note here:** http://www.cree.com/power_app_notes/soldering
C4D20120A Rev. C
**5**
## **Diode Model**
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VfT = VT+If*RT<br>**----- End of picture text -----**<br>
VT = 0.97+(TJ* -1.40*10[-3] ) RT = 0.023+(TJ* 2.71*10[-4] ) **Note: Tj = Diode Junction Temperature In Degrees Celsius, valid from 25°C to 175°C**
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VT RT<br>**----- End of picture text -----**<br>
## **Notes**
## **• RoHS Compliance**
The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or from the Product Documentation sections of www.cree.com.
## **• REACh Compliance**
REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request.
- This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control systems.
## Copyright © 2014 Cree, Inc. All rights reserved.
The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.
Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power
C4D20120A Rev. C
**6**
Updated at April 29, 2026
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