# Silicon Carbide Schottky Diode, Z-Rec 1200V Series, Single, 1.2 kV, 17 A, 27 nC, TO-220

![Product image](https://novapart.co/image/farnell:2345069/)

**URL**: https://novapart.co/products/C4D05120A/silicon-carbide-schottky-diode-z-rec-1200v-series
**SKU**: C4D05120A
**Manufacturer**: WOLFSPEED
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Schottky Diodes || Silicon Carbide Schottky Diodes
**Price**: €1.8800
**Stock**: 1000+
**Lead Time**: 358 days (indicative)

## Description

Product Range:Z-Rec 1200V Series; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:1.2kV; Continuous Forward Current If:17A; Total Capacitive Charge Qc:27nC; Diode

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 2 Pin |
| Product Range | Z-Rec 1200V |
| Qualification | - |
| Diode Mounting | Through Hole |
| Diode Case Style | TO-220 |
| Diode Configuration | Single |
| Average Forward Current | 17A |
| Total Capacitive Charge | 27nC |
| Operating Temperature Max | 175°C |
| Repetitive Peak Reverse Voltage | 1.2kV |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2345069/)

## **C4D05120A Silicon Carbide Schottky Diode** _Z-Rec[®]_ Rectifier 

## **Features** 

## **Package** 

**V** =   1200 V **RRM IF (TC=135˚C)** =         9.5 A **Qc** =     27 nC — 

- 1.2kV Schottky Rectifier 

- Zero Reverse Recovery Current 

- High-Frequency Operation 

- Temperature-Independent Switching 

- Extremely Fast Switching 

- Positive Temperature Coefficient on VF 

## **Benefits** 

## ~~ee~~ 

- Replace Bipolar with Unipolar Rectifiers 

- Essentially No Switching Losses 

- Higher Efficiency 

- Reduction of Heat Sink Requirements 

TO-220-2 

PIN 1 

PIN 2 

CASE 

- Parallel Devices Without Thermal Runaway 

## **Applicationspplicationslications** 

- **Applicationspplicationslications Part Number Package Marking** 

- • Switch Mode Power Supplies (SMPS) C4D05120A TO-220-2 C4D05120 

- ~~OO~~ • Boost diodes in PFC or DC/DC stages ~~RE~~ • Free Wheeling Diodes in Inverter stages • AC/DC converters 

**Maximum Ratings** (TC=25°C unless otherwise specified) 

|~~a~~||~~ee~~|~~ee~~|~~ee~~||
|---|---|---|---|---|---|
|**Symbol**<br>~~a~~<br>~~a~~<br>~~a~~|**Parameter**<br>~~ee~~<br>~~ee~~|**Value**<br>~~ee~~<br>~~ee~~<br>~~ee~~|**Unit**<br>~~ee~~<br>~~ee~~<br>~~ee~~|**Test Conditions**<br>~~ee~~<br>~~ee~~|**Note**<br>~~ee~~|
|VRRM<br>~~a~~<br>~~a~~<br>~~a~~|Repetitive Peak Reverse Voltage<br>~~ee~~<br>~~ee ee~~|1200<br>~~ee ~~<br>~~ee~~<br>~~ee~~|V<br> ~~ee~~<br>~~ee~~<br>~~ee~~|~~ee~~||
|VRSM<br>~~a~~<br>~~a~~<br>~~a~~|Surge Peak Reverse Voltage<br>~~ee ~~<br>~~ee ee~~<br>~~ee~~ee|1300<br> ~~ee ~~<br>~~ee~~<br>ee|V<br> ~~ee~~<br>~~ee~~<br>ee|||
|VR<br>~~a~~<br>~~a~~<br>~~a~~|DC Peak Reverse Voltage<br>~~ee ee~~<br>~~ee~~ee<br>~~ee~~|1200<br>~~ee ~~<br>ee<br>~~ee~~|V<br> ~~ee~~<br>ee<br>~~ee~~|~~ee~~|~~ee~~|
|IF<br>~~a~~<br>~~a~~<br>~~a~~|Continuous Forward Current<br>~~ee~~ee<br>~~ee~~<br>~~ee~~|19<br>9.5<br>5<br>ee <br>~~ee~~<br>~~ee~~|A<br> ee<br>~~ee~~<br>~~ee~~|TC=25˚C<br>TC=135˚C<br>TC=161˚C<br>~~ee~~|Fig. 3<br>~~ee~~|
|IFRM<br>~~a~~<br>~~a~~<br>~~a~~|Repetitive Peak Forward Surge Current<br>~~ee~~<br>~~ee~~<br>~~ee~~|26<br>18<br>~~ee~~<br>~~ee~~<br>~~ee~~|A<br>~~ee~~<br>~~ee~~<br>~~ee~~|TC=25˚C, tP=10 ms, Half Sine Pulse<br>TC=110˚C, tP=10 ms, Half Sine Pulse<br>~~ee~~|~~ee~~|
|IFSM<br>~~a~~<br>~~a~~<br>~~a~~|Non-Repetitive Forward Surge Current<br>~~ee ~~<br>~~ee~~<br>~~ee~~|46<br>36<br> ~~ee ~~<br>~~ee~~<br>~~ee~~|A<br> ~~ee~~<br>~~ee~~<br>~~ee~~|TC=25˚C, tP=10 ms, Half Sine Pulse<br>TC=110˚C, tP=10 ms, Half Sine Pulse|Fig. 8|
|IF,Max<br>~~a~~<br>~~a~~<br>~~a~~|Non-Repetitive Peak Forward Current<br>~~ee ~~<br>~~ee~~<br>~~ee~~|400<br>320<br> ~~ee ~~<br>~~ee~~<br>~~ee~~|A<br> ~~ee~~<br>~~ee~~<br>~~ee~~|TC=25˚C, tP=10ms, Pulse<br>TC=110˚C, tP=10ms, Pulse|Fig. 8|
|Ptot<br>~~a~~<br>~~a~~<br>~~a~~|Power Dissipation<br>~~ee ~~<br>~~ee~~<br>~~ee~~|100<br>43<br> ~~ee ~~<br>~~ee~~<br>~~ee~~|W<br> ~~ee~~<br>~~ee~~<br>~~ee~~|TC=25˚C<br>TC=110˚C|Fig. 4|
|dV/dt<br>~~a~~<br>~~a~~<br>~~a~~|Diode dV/dt ruggedness<br>~~ee ~~<br>~~ee~~<br>~~ee~~|200<br> ~~ee ~~<br>~~ee~~<br>~~ee~~|V/ns<br> ~~ee~~<br>~~ee~~<br>~~ee~~|VR=0-650V||
|∫i2dt<br>~~a~~<br>~~a~~<br>~~a~~|i2t value<br>~~ee ~~<br>~~ee~~<br>~~ee ee ee~~|10.6<br>6.5<br> ~~ee ~~<br>~~ee~~<br>~~ee ee~~|A2s<br> ~~ee~~<br>~~ee~~<br>~~ee ee~~|TC=25˚C, tP=10 ms<br>TC=110˚C, tP=10 ms||
|TJ<br>~~a~~<br>~~a~~|Operating Junction Range<br>~~ee ~~<br>~~ee ee ee~~<br>~~ee~~|-55 to<br>+175<br> ~~ee ~~<br>~~ee ee~~<br>~~ee~~|˚C<br> ~~ee~~<br>~~ee ee~~<br>~~ee~~|||
|Tstg<br>~~a~~<br>~~ee~~|Storage Temperature Range<br>~~ee ee ee~~<br>~~ee~~<br>~~ee~~|-55 to<br>+135<br>~~ee ee~~<br>~~ee~~<br>ee|˚C<br>~~ee ee~~<br>~~ee~~<br>ee~~eee~~|~~eee~~|~~eee~~|
|~~ee~~|TO-220 Mounting Torque<br>~~ee ~~<br>~~ee~~|1<br>8.8<br> ~~ee ~~<br>ee|Nm<br>lbf-in<br> ~~ee~~<br>ee~~eee~~|M3 Screw<br>6-32 Screw<br>~~eee~~|~~eee~~|



## **Electrical Characteristics** 

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Symbol Parameter Typ. Max. Unit Test Conditions Note<br>**----- End of picture text -----**<br>


|**Symbol**|**Parameter**|**Typ.**|**Max.**|**Unit**|**Test Conditions**|**Note**|
|---|---|---|---|---|---|---|
|VF|Forward Voltage|1.4<br>1.9|1.8<br>3|V|IF= 5 A  TJ=25°C<br>IF= 5 A  TJ=175°C|Fig. 1|
|IR|Reverse Current|20<br>40|150<br>300|μA|VR= 1200 V  TJ=25°C<br>VR= 1200 V  TJ=175°C|Fig. 2|
|QC|Total Capacitive Charge|27||nC|VR= 800 V, IF= 5A<br>d_i_/d_t_= 200 A/μs<br>TJ= 25°C|Fig. 5|
|C|Total Capacitance|390<br>27<br>20||pF|VR= 0 V, TJ= 25°C, f = 1 MHz<br>VR= 400 V, TJ= 25˚C, f = 1 M<br>VR= 800 V, TJ= 25˚C, f = 1 M|Hz<br>Hz<br>Fig. 6|
|EC|Capacitance Stored Energy|8.0||μJ|VR= 800 V|Fig. 7|



Note: This is a majority carrier diode, so there is no reverse recovery charge. 

## **Thermal Characteristics** 

|**Symbol**|**Parameter**|**Typ.**|**Unit**|**Note**|
|---|---|---|---|---|
|RθJC|Thermal Resistance from Junction to Case|1.5|°C/W|Fig. 9|



## **Typical Performance** 

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**----- Start of picture text -----**<br>
10<br>9 [T] J [=-55°C]<br>[T] J [= 25°C]<br>  TJ= 75°C<br>8   TJ =125°C<br>TJ =175°C<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 0.5 1 1.5 2 2.5 3 3.5<br>Voltage (V) VF (V)<br> (A)<br>F<br>I<br>Current (A)<br>**----- End of picture text -----**<br>


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1000<br>900<br>800<br>700<br>600<br>500<br>400<br>[T] J [=-55°C]<br>[T] J [= 25°C]<br>300   TJ= 75°C<br>  TJ =125°C<br>200 TJ =175°C<br>100<br>0<br>0 500 1000 1500 2000<br>VR (V) Voltage (V)<br> (μA)<br>R<br>I<br>Current (µA)<br>**----- End of picture text -----**<br>


Figure 1. Forward Characteristics 

Figure 2. Reverse Characteristics 

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C4D05120A Rev. C, 09-2016 

**2** 

## **Typical Performance** 

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70<br>60<br>50 [10% Duty]<br>  20% Duty<br>  30% Duty<br>40   50% Duty<br>  70% Duty<br>  DC<br>30<br>20<br>10<br>0<br>25 50 75 100 125 150 175<br>T  ˚C<br>C<br> (A)<br>F(peak)<br>I<br>**----- End of picture text -----**<br>


Figure 3. Current Derating 

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35<br>30<br>25<br>20<br>15<br>10<br>5<br>0<br>0 200 400 600 800 1000<br>VR (V)<br>(nC)<br>c<br>Q<br>**----- End of picture text -----**<br>


Figure 5. Recovery Charge vs. Reverse Voltage 

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110.0<br>100.0<br>90.0<br>80.0<br>70.0<br>60.0<br>50.0<br>40.0<br>30.0<br>20.0<br>10.0<br>0.0<br>25 50 75 100 125 150 175<br>T  ˚C<br>C<br> (W)<br>Tot<br>P<br>**----- End of picture text -----**<br>


Figure 4. Power Derating 

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450<br>400<br>350<br>300<br>250<br>200<br>150<br>100<br>50<br>0<br>0.1 1 10 100 1000<br>VR (V)<br>C (pF)<br>**----- End of picture text -----**<br>


Figure 6. Capacitance vs. Reverse Voltage 

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**3** 

C4D05120A Rev. C, 09-2016 

## **Typical Performance** 

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**----- Start of picture text -----**<br>
14.0 14<br>12.0 12<br>10.0 10<br>8.0 8<br>6.0 6<br>4.0 4<br>2.0 2<br>0.0 0<br>   0            200          400           600          800         1000 0 200 400 600 800 1000<br>VR Reverse Voltage (V) VR (V)<br>J)<br>m<br>(<br>C<br>E<br>Capacitive Energy (uJ)<br>C<br>E<br>**----- End of picture text -----**<br>


Figure 7. Typical Capacitance Stored Energy 

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**----- Start of picture text -----**<br>
1000 1000<br>100 100<br>[T] J_intial  [= 25°C]<br>  TJ_intital = 110°C<br>10 0<br>   1E-05                  1E-04                   1E-03                   1E-02 1.E-05 1.E-04 1.E-03 1.E-02<br>tp (s) tp(s)<br>(A)<br> (A) FSM<br>I FSM<br>I<br>**----- End of picture text -----**<br>


Figure 8. Non-repetitive peak forward surge current versus pulse duration (sinusoidal waveform) 

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1<br>0.5<br>0.3<br>0.1<br>0.05<br>100E-3<br>0.02<br>SinglePulse<br>0.01<br>10E-3<br>1E-6 10E-6 100E-6 1E-3 10E-3 100E-3 1<br>Time, t T (Sec) p (s)<br>C/W)<br>o<br> (<br>thJC<br>Case Impedance, Z<br>Thermal Resistance (˚C/W) Junction To<br>**----- End of picture text -----**<br>


Figure 9. Transient Thermal Impedance 

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C4D05120A Rev. C, 09-2016 

**4** 

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**----- Start of picture text -----**<br>
~ Lr<br>Package Dimensionsge Dimensionse Dimensions<br>Package TO-220-2<br>| ;<br>-<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
|||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
|~|Lr|
|Package Dimensionsge Dimensionse Dimensions|
|Package TO-220-2|||;|||POS|Min|Inches|Max|MinMillimetersMax|
|A|.381|.410|9.677|10.414|
|-|fr|eeesee|ee|ee|ee|
|TD|B|.235|.255|5.969|6.477|
|||a|es|
|C|.100|.120|2.540|3.048|
|:|
|fe|D|.223|.337|5.664|8.560|
|||||ee|ee|||
|D1|.457-.490|11.60-12.45 typ|
|||||ee|D2|.277-.303 typ|ee||7.04-7.70 typ|
|D3|.244-.252 typ|6.22-6.4 typ|
|Ion|—-||.—_|||||||||es|E1E|.590.302|.615.326|14.9867.68|15.6218.28|
|ee|ee|ee|ee|ee|
|E2|.227|251|5.77|6.37|
|es|ee|ee|ee|ee|
|||.|F|.143|.153|3.632|3.886|
|||W|||G|1.105|1.147|28.067|29.134|
|7|H|.500|.550|12.700|13.970|
|a|ee|ee|ee|
|L|.025|.036|.635|.914|
|es|ee|ee|ee|ee|
|M|.045|.055|1.143|1.550|
|ee|ee|ee|ee|
|N|.195|.205|4.953|5.207|
|pee|o¥|ee|ee|ee|ee|
|P|.165|.185|4.191|4.699|
|||hy|;|aH||Q|.048|.054|1.219|1.372|
|ee|ee|ee|es|
|S|3°|6°|3°|6°|
|||
|Po|ana|an|ee|ee|ee|ee|
|T|3°|6°|3°|6°|
|L_| _|i|U|3°|6°|3°|6°|
|V|.094|.110|2.388|2.794|
|PIN 1|W|.014|.025|.356|.635|
|CASE|X|3°|5.5°|3°|5.5°|
|ee|ee|ee|
|PIN 2|Y|.385|.410|9.779|10.414|
|||Lo|
|z|.130|.150|3.302|3.810|
|ee|ee|ee|ee|ee|
|View A-A|NOTE:|
|1.|Dimension L, M, W apply for Solder Dip Finish|

**----- End of picture text -----**<br>


## **Recommended Solder Pad Layout** 

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**----- Start of picture text -----**<br>
       TO-220-2<br>**----- End of picture text -----**<br>


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||||
|---|---|---|
|Part Number|Package|Marking|
|C4D05120A|TO-220-2|C4D05120|

**----- End of picture text -----**<br>


**Note: Recommended soldering profiles can be found in the applications note here:** http://www.wolfspeed.com/power_app_notes/soldering 

C4D05120A Rev. C, 09-2016 

**5** 

## **Diode Model** 

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**----- Start of picture text -----**<br>
VfT = VT + If * RT<br>VT = 0.96 + (Tj * -1.22*10 [-3] )<br>RT = 0.08 + (Tj * 8.5*10 [-4] )<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Note:  Tj is diode junction temperature in degrees Celsius<br>**----- End of picture text -----**<br>


## **Notes** 

- **RoHS Compliance** 

The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Wolfspeed representative or from the Product Ecology section of our website at http:// www.wolfspeed.com/power/tools-and-support/product-ecology. 

- **REACh Compliance** 

   - REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. 

- This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control systems. 

## **Related Links** 

- Cree SiC Schottky diode portfolio: http://www.wolfspeed.com/Power/Products#SiCSchottkyDiodes 

- Schottky diode Spice models: http://www.wolfspeed.com/power/tools-and-support/DIODE-model-request2 

- SiC MOSFET and diode reference designs: http://go.pardot.com/l/101562/2015-07-31/349i 

Copyright © 2016 Cree, Inc. All rights reserved. 

The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. 

Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power 

C4D05120A Rev. C, 09-2016 

**6** 



## Links

- [View this product on Novapart](https://novapart.co/products/C4D05120A/silicon-carbide-schottky-diode-z-rec-1200v-series)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/wolfspeed/c4d05120a/diode-schottky-1200v-5a-sic-to/dp/2345069)
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