# Silicon Carbide Schottky Diode, Z-Rec 600V Series, Single, 600 V, 6 A, 8.5 nC, TO-220-F2

![Product image](https://novapart.co/image/farnell:2361489/)

**URL**: https://novapart.co/products/C3D04060F/silicon-carbide-schottky-diode-z-rec-600v-series
**SKU**: C3D04060F
**Manufacturer**: WOLFSPEED
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Schottky Diodes || Silicon Carbide Schottky Diodes
**Price**: €0.8060
**Stock**: 10+
**Lead Time**: 358 days (indicative)

## Description

Product Range:Z-Rec 600V Series; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:600V; Continuous Forward Current If:6A; Total Capacitive Charge Qc:8.5nC; Diode Case

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 2 Pin |
| Product Range | Z-Rec 600V |
| Qualification | - |
| Diode Mounting | Through Hole |
| Diode Case Style | TO-220-F2 |
| Diode Configuration | Single |
| Average Forward Current | 6A |
| Total Capacitive Charge | 8.5nC |
| Operating Temperature Max | 175°C |
| Repetitive Peak Reverse Voltage | 600V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2361489/)

## **C3D04060F Silicon Carbide Schottky Diode** _Z-Rec_ _**®**_ Rectifier **(Full-Pak)** 

## **Features** 

## **Package** 

**==> picture [111 x 51] intentionally omitted <==**

**----- Start of picture text -----**<br>
V              =       600 V<br>RRM<br>IF (TC=135˚C)    =              4 A<br>Qc           =       10 nC<br>**----- End of picture text -----**<br>


- 600-Volt Schottky Rectifier 

- Zero Reverse Recovery Current 

- Zero Forward Recovery Voltage 

- High-Frequency Operation 

- Temperature-Independent Switching Behavior 

- Extremely Fast Switching 

- Positive Temperature Coefficient on VF 

- Fully Isolated Case 

TO-220-F2 

## **Benefits** 

- Replace Bipolar with Unipolar Rectifiers 

- Essentially No Switching Losses 

- Higher Efficiency 

**==> picture [149 x 18] intentionally omitted <==**

**----- Start of picture text -----**<br>
PIN 1<br>CASE<br>**----- End of picture text -----**<br>


PIN 2 

- Reduction of Heat Sink Requirements 

- Parallel Devices Without Thermal Runaway 

## **Applications** 

|**Symbol**|**Parameter**|**Value**|**Unit**|**Test Conditions**|**Note**|
|---|---|---|---|---|---|
|VRRM<br>~~a~~|Repetitive Peak Reverse Voltage<br>~~ee~~|600<br>~~ee~~|V<br>~~ee~~|~~ee~~||
|VDC<br>~~a~~<br>~~a~~|DC Blocking Voltage<br>~~ee~~|600<br>~~ee~~<br>~~ee~~|V<br>~~ee~~<br>~~ee~~|~~ee~~<br>~~ee~~|~~ee~~|
|IF<br>~~a~~<br>~~ee~~<br>~~a~~<br>~~a~~|Continuous Forward Current<br>~~ee ~~<br>~~ee~~<br>~~ee~~|9<br>6<br>4<br> ~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|A<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|TC=25˚C<br>TC=100˚C<br>TC=135˚C<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|Fig. 3<br>~~ee~~<br>~~ee~~|
|IFRM<br>~~a~~<br>~~a~~<br>~~a~~|Repetitive Peak Forward Surge Current<br>~~ee~~<br>~~ee~~|15<br>10.5<br>~~ee ~~<br>~~ee~~<br>~~ee~~|A<br> ~~ee~~<br>~~ee~~<br>~~ee~~|TC=25˚C, tP= 10 ms, Half Sine Wave<br>TC=110˚C, tP= 10 ms, Half Sine Wave<br>~~ee~~<br>~~ee~~<br>~~ee~~|~~ee~~|
|IFSM<br>~~a~~<br>~~a~~<br>~~a~~|Non-Repetitive Peak Forward Surge Current<br>~~ee ~~<br>~~ee~~<br>~~ee~~|19<br>16.5<br> ~~ee~~ <br>~~ee~~<br>~~ee~~|A<br> ~~ee~~<br>~~ee~~<br>~~ee~~|TC=25˚C, tp= 10 ms, Half Sine Wave<br>TC=110˚C, tp= 10 ms, Half Sine Wave<br>~~ee~~<br>~~ee~~<br>~~ee~~|Fig. 8|
|IFSM(max)<br>~~a~~<br>~~a~~<br>~~a~~|Non-Repetitive Peak Forward Surge Current<br>~~ee ~~<br>~~ee~~<br>~~ee~~|220<br>160<br> ~~ee~~ <br>~~ee~~<br>~~ee~~|A<br> ~~ee~~<br>~~ee~~<br>~~ee~~|TC=25˚C, tP= 10 µs, Pulse<br>TC=110˚C, tP= 10 µs, Pulse<br>~~ee~~<br>~~ee~~<br>~~ee~~|Fig. 8|
|Ptot<br>~~a~~<br>~~a~~<br>~~a~~|Power Dissipation<br>~~ee ~~<br>~~ee~~<br>~~ee~~|30.9<br>13.4<br> ~~ee~~ <br>~~ee~~<br>~~ee~~|W<br> ~~ee~~<br>~~ee~~<br>~~ee~~|TC=25˚C<br>TC=110˚C<br>~~ee~~<br>~~ee~~<br>~~ee~~|Fig. 4|
|dV/dt<br>~~a~~<br>~~a~~<br>~~a~~|Diode dV/dt ruggedness<br>~~ee ~~<br>~~ee~~<br>~~ee~~|200<br> ~~ee~~ <br>~~ee~~<br>~~ee~~|V/ns<br> ~~ee~~<br>~~ee~~<br>~~ee~~|VR=0-600V<br>~~ee~~<br>~~ee~~<br>~~ee~~||
|∫i2dt<br>~~a~~<br>~~a~~<br>~~a~~|i2t value (Per Leg)<br>~~ee ~~<br>~~ee~~<br>~~ee~~|1.8<br>1.3<br> ~~ee~~ <br>~~ee~~<br>~~ee~~|A2s<br> ~~ee~~<br>~~ee~~<br>~~ee~~|TC=25˚C, tP=10 ms<br>TC=110˚C, tP=10 ms<br>~~ee~~<br>~~ee~~<br>~~ee~~||
|TJ, Tstg<br>~~a~~<br>~~a~~|Operating Junction and Storage Temperature<br>~~ee ~~<br>~~ee~~<br>~~ee~~|-55 to<br>+175<br> ~~ee~~ <br>~~ee~~<br>~~es~~|˚C<br> ~~ee~~<br>~~ee~~<br>~~ee~~|~~ee~~<br>~~ee~~<br>~~ee~~|~~ee~~|
|~~a~~|TO-220 Mounting Torque<br>~~ee ~~<br>~~ee~~|1<br>8.8<br> ~~ee~~ <br>~~es~~|Nm<br>lbf-in<br> ~~ee~~<br>~~ee~~|M3 Screw<br>6-32 Screw<br>~~ee~~<br>~~ee~~|~~ee~~|



- Switch Mode Power Supplies (SMPS) 

- Boost diodes in PFC or DC/DC stages 

- Free Wheeling Diodes in Inverter stages 

- AC/DC converters 

**Maximum Ratings** (TC = 25 ˚C unless otherwise specified) 

**1** C3D04060F Rev. H, 02-2019 

## **Electrical Characteristics** 

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Symbol Parameter Typ. Max. Unit Test Conditions Note<br>**----- End of picture text -----**<br>


|**Symbol**|**Parameter**|**Typ.**|**Max.**|**Unit**|**Test Conditions**|**Note**|
|---|---|---|---|---|---|---|
|VF|Forward Voltage|1.5<br>1.7|1.7<br>2.4|V|IF= 4 A  TJ=25°C<br>IF= 4 A  TJ=175°C|Fig. 1|
|IR|Reverse Current|5<br>10|25<br>100|μA|VR= 650 V  TJ=25°C<br>VR= 650 V  TJ=175°C|Fig. 2|
|QC|Total Capacitive Charge|10||nC|VR= 400 V, IF= 4 A<br>d_i_/d_t_= 500 A/μs<br>TJ= 25°C|Fig. 5|
|C|Total Capacitance|231<br>18.5<br>15||pF|VR= 0 V, TJ= 25°C, f = 1 MHz<br>VR= 200 V, TJ= 25˚C, f = 1 MHz<br>VR= 400 V, TJ= 25˚C, f = 1 MHz|Fig. 6|
|EC|Capacitance Stored Energy|1.4||μJ|VR= 400 V|Fig. 7|



Note: This is a majority carrier diode, so there is no reverse recovery charge. 

## **Thermal Characteristics** 

|**Symbol**|**Parameter**|**Typ.**|**Unit**|**Note**|
|---|---|---|---|---|
|RθJC|Thermal Resistance from Junction to Case|4.85|°C/W|Fig. 9|



## **Typical Performance** 

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**----- Start of picture text -----**<br>
12 100<br>TJ = -55 °C<br>10<br>80<br>TJ = 25 °C<br>8 TJ = 75 °C<br>60 TJ = 175 °C<br>TJ = 125 °C<br>6 TJ = 125 °C<br>TJ = 175 °C<br>40 TJ = 75 °C<br>4<br>TJ = 25 °C<br>2 20 TJ = -55 °C<br>0 0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 200 400 600 800 1000 1200<br>Foward Voltage, V VF (V) F (V) Reverse Voltage, V VR (V) R (V)<br> (uA)<br> (A)F RR<br>A)<br>m<br> (A)  (<br>F R<br>I I<br>ard Current, I age Current, I<br>Fow Reverse Leak<br>**----- End of picture text -----**<br>


Figure 1. Forward Characteristics 

Figure 2. Reverse Characteristics 

C3D04060F Rev. H, 02-2019 

**2** 

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**----- Start of picture text -----**<br>
Typical Performance<br>30 25 35 16<br>10% Duty 10% Duty<br>20% Duty 20% Duty 30 14<br>25 20 30% Duty 30% Duty<br>50% Duty 50% Duty 12<br>70% Duty 70% Duty 25<br>20 DC DC<br>10<br>15<br>20<br>15 8<br>15<br>10<br>6<br>10<br>10<br>4<br>5<br>5<br>5 2<br>0 0 0 0<br>25 25 50 50 75 75 100 100 125 125 150 150 175 175 25 25 50 50 75 75 100 100 125 125 150 150 175 175<br>T T C CC  (°C)  ˚C T TC CC  (°C)  ˚C<br>Figure 3. Current Derating Figure 4. Power Derating<br>16 250<br>Conditions: Conditions:<br>14 TJ = 25 °C TJ = 25 °C<br>Ftest = 1 MHz<br>12 200 Vtest = 25 mV<br>10<br>150<br>8<br>100<br>6<br>4<br>50<br>2<br>0 0<br>0 100 200 300 400 500 600 700 0 1 10 100 1000<br>Reverse Voltage, V VR (V) R (V) Reverse Voltage, V VR (V) R (V)<br> (A) (A)  (W)<br> (A)  (W)<br>IF  (W) Tot<br>IIF(peak)F(peak) PP P Tot TOT<br> (nC)<br>C<br> (nC)<br>C<br>C (pF)<br>Q<br>tive Charge, Q<br>apacitance (pF)<br>Capaci C<br>**----- End of picture text -----**<br>


Figure 5. Total Capacitance Charge vs. Reverse Voltage 

Figure 6. Capacitance vs. Reverse Voltage 

**3** C3D04060F Rev. H, 02-2019 

## **Typical Performance** 

**==> picture [540 x 288] intentionally omitted <==**

**----- Start of picture text -----**<br>
4 1,000<br>3.5<br>3<br>TJ_initial = 25 °C<br>2.5 TJ_initial = 110 °C<br>2 100<br>1.5<br>1<br>0.5<br>0 10<br>0 100 200 300 400 500 600 700 10E-6 100E-6 1E-3 10E-3<br>Reverse Voltage, V VR (V) R (V) Time, t tp (s) p (s)<br>J)<br>µ<br> (<br>C<br>J)<br>m  (A)<br>(<br>C<br>E FSM<br>I<br>ored Energy, E<br>Capacitance St<br>**----- End of picture text -----**<br>


Figure 7. Capacitance Stored Energy 

Figure 8. Non-repetitive peak forward surge current versus pulse duration (sinusoidal waveform) 

**==> picture [504 x 325] intentionally omitted <==**

**----- Start of picture text -----**<br>
 10<br>10 0.5<br>0.5<br>0.3<br> 1<br>0.1 0.3<br>0.05<br>1<br>0.1<br>0.02<br>100E-3<br>0.05<br>0.01<br>0.02<br>100E-3 0.01 SinglePulse<br>10E-3<br>SinglePulse<br>10E-3 1E-3<br>1E-6 1E-6 10E-6 10E-6 100E-6 100E-6 1E-3 1E-3 10E-3 10E-3 100E-3 100E-3 1 10  1 100  10<br>Time, t T (Sec)T (Sec) p (s)<br>Figure 9. Transient Thermal Impedance<br>C/W)<br>o<br> (<br>thJC<br>Thermal Resistance (˚C/W)<br>Junction To Case Impedance, Z<br>**----- End of picture text -----**<br>


**4** C3D04060F Rev. H, 02-2019 

## **Package Dimensions** 

## Package TO-220-F2 

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    SYMBOL     MIN (mm)    MAX (mm)<br>eS eS<br>eS           A         A1          4.30        1.80           4.93         3.90<br>_ ._.sé~-nvr<br>         A2          2.34         2.90<br>Sd Wn<br>          b         0.40         0.91<br>         b1         1.00           1.40<br>aSS          b2  es         0.56         0.93<br>         b3         0.24         0.55<br>        C         0.40           0.80<br>eS<br>e          D  e        14.70 ee         16.07<br>S<br>       D1                             2.50 TYP<br>CS OoséOC0™NW~OW“"“w”Tw’vVWVnwvwv0nwvv0nnwn<br>       D2                             2.66 TYP<br>         e         4.83           5.33<br>__eS         E  |_vNnnWnnvw         9.70        10.36<br>        E1                            7.00 TYP<br>a         G         6.50           7.10<br>       Ho                               28 TYP<br>SC OséO—~™NW~N*"“wWwWv0N0w”w”-0w0w0wnwnwnw<br> sspnnv”nnn        L         12.10         13.50<br>eS       L1            0.50<br>      M                            2.86 TYP<br>OT é—CE0FéENE>OrcrnNm™wmNmN>NONoQo0n0n0w0wnn<br>eS       ØP         2.98         3.40<br>       Q         3.10         3.30<br>__—._— nN’<br>       Q1         2.70         3.50<br>eS eS<br>       Θ                               20° TYP<br>S        Θ1                                 3° TYP sS<br>       Θ2                                  5° TYP<br>CC  é—NEO2COnNnaivnnvnn’nn<br>PIN 1<br>PIN 2<br>**----- End of picture text -----**<br>


## **Recommended Solder Pad Layout** 

## TO-220-2 

|**Part Number**|**Package**|**Marking**|
|---|---|---|
|C3D04060F|TO-220-F2|C3D04060|



**Note: Recommended soldering profiles can be found in the applications note here:** http://www.cree.com/power_app_notes/soldering 

C3D04060F Rev. H, 02-2019 

**5** 

## **Notes** 

- **RoHS Compliance** 

The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Wolfpseed representative or from the Product Ecology section of our website at http:// www.wolfspeed.com/Power/Tools-and-Support/Product-Ecology. 

## **• REACh Compliance** 

REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. 

- This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control systems. 

## **Related Links** 

- Cree SiC Schottky diode portfolio: http://www.wolfspeed.com/Power/Products#SiCSchottkyDiodes 

- Schottky diode Spice models: http://www.wolfspeed.com/power/tools-and-support/DIODE-model-request2 

- SiC MOSFET and diode reference designs: http://go.pardot.com/l/101562/2015-07-31/349i 

Copyright © 2019 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. 

Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power 

C3D04060F Rev. H, 02-2019 

**6** 



## Links

- [View this product on Novapart](https://novapart.co/products/C3D04060F/silicon-carbide-schottky-diode-z-rec-600v-series)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/wolfspeed/c3d04060f/diode-schottky-600v-4a-sic-to220/dp/2361489)
---

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