BZV49-C3V3,115

Zener Single Diode, 3.3 V, 1 W, SOT-89, 3 Pins, 150 °C, Surface Mount

⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.

Manufacturer: NEXPERIA
Product type: Zener Single Diodes
Zener Voltage Vz Typ:3.3V; Power Dissipation Pd:1W; Diode Case Style:SOT-89; Zener Tolerance ±:5%; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:BZV49 Series; Automot
SVHC: No SVHC (25-Jun-2025)
No. of Pins: 3Pins
Product Range: BZV49
Qualification: -
Diode Mounting: Surface Mount
Diode Case Style: SOT-89
Power Dissipation: 1W
Zener Voltage Nom: 3.3V
Operating Temperature Max: 150°C

Delivery and price
Units per pack	5000
Price	0.276 €
Current stock	10+
Lead time	30 days

Datasheet

## **DISCRETE SEMICONDUCTORS** 

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**----- Start of picture text -----**<br>
DATA SHEET<br>book, halfpage<br>M3D109<br>**----- End of picture text -----**<br>


## **BZV49 series** Voltage regulator diodes 

Supersedes data of 1999 May 11 

2005 Feb 03 

**Philips Semiconductors** 

## **Voltage regulator diodes** 

## **BZV49 series** 

## **FEATURES** 

- Total power dissipation: max. 1 W 

- Tolerance series: approx. ±5% 

- Working voltage range: nom. 2.4 to 75 V (E24 range) 

- Non-repetitive peak reverse power dissipation: max. 40 W. 

## **PINNING** 

|**PINNING**||
|---|---|
|**PIN**|**DESCRIPTION**|
|1|anode|
|2|cathode|
|3|anode|



## **APPLICATIONS** 

- General regulation functions. 

## **DESCRIPTION** 

Medium-power voltage regulator diodes in a SOT89 plastic SMD package. 

The diodes are available in the normalized E24 approx. ±5% tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V (BZV49-C2V4 to BZV49-C75). 

**==> picture [164 x 81] intentionally omitted <==**

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1 3<br>2<br>3 2 1 sym096<br>**----- End of picture text -----**<br>


Fig.1  Simplified outline (SOT89) and symbol. 

## **ORDERING INFORMATION** 

|**TYPE NUMBER**|**PACKAGE**|**PACKAGE**|**PACKAGE**|
|---|---|---|---|
||**NAME**|**DESCRIPTION**|**VERSION**|
|BZV49-C2V4 to<br>BZV49-C75<br>note 1|SC-62|plastic surface mounted package; collector pad for good heat<br>transfer; 3 leads|SOT89|



## **Note** 

1. The series consists of 37 types with nominal working voltages from 2.4 to 75 V (E24 range). 

## **MARKING** 

|**MARKING**||||||||
|---|---|---|---|---|---|---|---|
|**TYPE**<br>**NUMBER**|**MARKING**<br>**CODE**|**TYPE**<br>**NUMBER**|**MARKING**<br>**CODE**|**TYPE**<br>**NUMBER**|**MARKING**<br>**CODE**|**TYPE**<br>**NUMBER**|**MARKING**<br>**CODE**|
|BZV49-C2V4|2Y4|BZV49-C6V2|6Y2|BZV49-C16|16Y|BZV49-C43|43Y|
|BZV49-C2V7|2Y7|BZV49-C6V8|6Y8|BZV49-C18|18Y|BZV49-C47|47Y|
|BZV49-C3V0|3Y0|BZV49-C7V5|7Y5|BZV49-C20|20Y|BZV49-C51|51Y|
|BZV49-C3Y3|3Y3|BZV49-C8V2|8Y2|BZV49-C22|22Y|BZV49-C56|56Y|
|BZV49-C3V6|3Y6|BZV49-C9V1|9Y1|BZV49-C24|24Y|BZV49-C62|62Y|
|BZV49-C3V9|3Y9|BZV49-C10|10Y|BZV49-C27|27Y|BZV49-C68|68Y|
|BZV49-C4V3|4Y3|BZV49-C11|11Y|BZV49-C30|30Y|BZV49-C75|75Y|
|BZV49-C4V7|4Y7|BZV49-C12|12Y|BZV49-C33|33Y|−|−|
|BZV49-C5V1|5Y1|BZV49-C13|13Y|BZV49-C36|36Y|−|−|
|BZV49-C5V6|5Y6|BZV49-C15|15Y|BZV49-C39|39Y|−|−|



2005 Feb 03 

2 

Philips Semiconductors 

## Voltage regulator diodes 

## BZV49 series 

## **LIMITING VALUES** 

In accordance with the Absolute Maximum Rating System (IEC 60134). 

|**SYMBOL**|**PARAMETER**|**CONDITIONS**|**MIN.**|**MAX.**|**UNIT**|
|---|---|---|---|---|---|
|IF|continuous forward current||−|250|mA|
|IZSM|non-repetitive peak reverse current|tp= 100µs; square wave;<br>Tj= 25°C prior to surge|see Table<br>“Per type”|||
|Ptot|total power dissipation|Tamb= 25°C; note 1|−|1|W|
|PZSM|non-repetitive peak reverse power<br>dissipation|tp= 100µs; square wave;<br>Tj= 25°C prior to surge; see Fig.2|−|40|W|
|Tstg|storage temperature||−65|+150|°C|
|Tj|junction temperature||−|150|°C|



## **Note** 

1. Device mounted on a ceramic substrate; area = 2.5 cm[2] ; thickness = 0.7 mm. 

## **ELECTRICAL CHARACTERISTICS** 

## **Total series** 

Tamb = 25 °C unless otherwise specified. 

|**Total series**<br>Tamb= 25°C|unless otherwise specified.||||
|---|---|---|---|---|
|**SYMBOL**|**PARAMETER**|**CONDITIONS**|**MAX.**|**UNIT**|
|VF|forward voltage|IF= 50 mA; see Fig.3|1|V|



2005 Feb 03 

3 

## **Per type** 

Tj = 25 °C unless otherwise specified. 

|**BZV49-**<br>**CXXX**|**WORKING**<br>**VOLTAGE**<br>**VZ (V)**<br>**at IZtest**|**WORKING**<br>**VOLTAGE**<br>**VZ (V)**<br>**at IZtest**|**DIFFERENTIAL**<br>**RESISTANCE**<br>**rdif (**Ω**)**<br>**at IZtest**|**DIFFERENTIAL**<br>**RESISTANCE**<br>**rdif (**Ω**)**<br>**at IZtest**|**TEMP. COEFF.**<br>**SZ (mV/K)**<br>**at IZtest**<br>see Figs 4 and 5|**TEMP. COEFF.**<br>**SZ (mV/K)**<br>**at IZtest**<br>see Figs 4 and 5|**TEMP. COEFF.**<br>**SZ (mV/K)**<br>**at IZtest**<br>see Figs 4 and 5|**TEST**<br>**CURRENT**<br>**IZtest (mA)**|**DIODE CAP.**<br>**Cd (pF)**<br>**at f = 1 MHz;**<br>**at VR = 0 V**|**REVERSE**<br>**CURRENT at**<br>**REVERSE**<br>**VOLTAGE**|**REVERSE**<br>**CURRENT at**<br>**REVERSE**<br>**VOLTAGE**|**NON-REPETITIVE PEAK**<br>**REVERSE CURRENT**<br>**IZSM (A)**<br>**at tp = 100**µ**s;**<br>**Tamb = 25**°**C**|
|---|---|---|---|---|---|---|---|---|---|---|---|---|
|||||||||||**IR (**µ**A)**|**VR**<br>**(V)**||
||**MIN.**|**MAX.**|**TYP.**|**MAX.**|**MIN.**|**TYP.**|**MAX.**||**MAX.**|**MAX.**||**MAX.**|
|2V4|2.2|2.6|70|100|−3.5|−1.6|0|5|450|50|1.0|6.0|
|2V7|2.5|2.9|75|100|−3.5|−2.0|0|5|450|20|1.0|6.0|
|3V0|2.8|3.2|80|95|−3.5|−2.1|0|5|450|10|1.0|6.0|
|3V3|3.1|3.5|85|95|−3.5|−2.4|0|5|450|5|1.0|6.0|
|3V6|3.4|3.8|85|90|−3.5|−2.4|0|5|450|5|1.0|6.0|
|3V9|3.7|4.1|85|90|−3.5|−2.5|0|5|450|3|1.0|6.0|
|4V3|4.0|4.6|80|90|−3.5|−2.5|0|5|450|3|1.0|6.0|
|4V7|4.4|5.0|50|80|−3.5|−1.4|+0.2|5|300|3|2.0|6.0|
|5V1|4.8|5.4|40|60|−2.7|−0.8|+1.2|5|300|2|2.0|6.0|
|5V6|5.2|6.0|15|40|−2.0|+1.2|+2.5|5|300|1|2.0|6.0|
|6V2|5.8|6.6|6|10|0.4|2.3|3.7|5|200|3|4.0|6.0|
|6V8|6.4|7.2|6|15|1.2|3.0|4.5|5|200|2|4.0|6.0|
|7V5|7.0|7.9|6|15|2.5|4.0|5.3|5|150|1|5.0|4.0|
|8V2|7.7|8.7|6|15|3.2|4.6|6.2|5|150|0.7|5.0|4.0|
|9V1|8.5|9.6|6|15|3.8|5.5|7.0|5|150|0.5|6.0|3.0|
|10|9.4|10.6|8|20|4.5|6.4|8.0|5|90|0.2|7.0|3.0|
|11|10.4|11.6|10|20|5.4|7.4|9.0|5|85|0.1|8.0|2.5|
|12|11.4|12.7|10|25|6.0|8.4|10.0|5|85|0.1|8.0|2.5|
|13|12.4|14.1|10|30|7.0|9.4|11.0|5|80|0.1|8.0|2.5|
|15|13.8|15.6|10|30|9.2|11.4|13.0|5|75|0.05|10.5|2.0|
|16|15.3|17.1|10|40|10.4|12.4|14.0|5|75|0.05|11.2|1.5|
|18|16.8|19.1|10|45|12.4|14.4|16.0|5|70|0.05|12.6|1.5|
|20|18.8|21.2|15|55|14.4|16.4|18.0|5|60|0.05|14.0|1.5|
|22|20.8|23.3|20|55|16.4|18.4|20.0|5|60|0.05|15.4|1.25|
|24|22.8|25.6|25|70|18.4|20.4|22.0|5|55|0.05|16.8|1.25|



|**BZV49-**<br>**CXXX**|**WORKING**<br>**VOLTAGE**<br>**VZ (V)**<br>**at IZtest**|**WORKING**<br>**VOLTAGE**<br>**VZ (V)**<br>**at IZtest**|**DIFFERENTIAL**<br>**RESISTANCE**<br>**rdif (**Ω**)**<br>**at IZtest**|**DIFFERENTIAL**<br>**RESISTANCE**<br>**rdif (**Ω**)**<br>**at IZtest**|**TEMP. COEFF.**<br>**SZ (mV/K)**<br>**at IZtest**<br>see Figs 4 and 5|**TEMP. COEFF.**<br>**SZ (mV/K)**<br>**at IZtest**<br>see Figs 4 and 5|**TEMP. COEFF.**<br>**SZ (mV/K)**<br>**at IZtest**<br>see Figs 4 and 5|**TEST**<br>**CURRENT**<br>**IZtest (mA)**|**DIODE CAP.**<br>**Cd (pF)**<br>**at f = 1 MHz;**<br>**at VR = 0 V**|**REVERSE**<br>**CURRENT at**<br>**REVERSE**<br>**VOLTAGE**|**REVERSE**<br>**CURRENT at**<br>**REVERSE**<br>**VOLTAGE**|**NON-REPETITIVE PEAK**<br>**REVERSE CURRENT**<br>**IZSM (A)**<br>**at tp = 100**µ**s;**<br>**Tamb = 25**°**C**|
|---|---|---|---|---|---|---|---|---|---|---|---|---|
|||||||||||**IR (**µ**A)**|**VR**<br>**(V)**||
||**MIN.**|**MAX.**|**TYP.**|**MAX.**|**MIN.**|**TYP.**|**MAX.**||**MAX.**|**MAX.**||**MAX.**|
|27|25.1|28.9|25|80|21.4|23.4|25.3|2|50|0.05|18.9|1.0|
|30|28.0|32.0|30|80|24.4|26.6|29.4|2|50|0.05|21.0|1.0|
|33|31.0|35.0|35|80|27.4|29.7|33.4|2|45|0.05|23.1|0.9|
|36|34.0|38.0|35|90|30.4|33.0|37.4|2|45|0.05|25.2|0.8|
|39|37.0|41.0|40|130|33.4|36.4|41.2|2|45|0.05|27.3|0.7|
|43|40.0|46.0|45|150|37.6|41.2|46.6|2|40|0.05|30.1|0.6|
|47|44.0|50.0|50|170|42.0|46.1|51.8|2|40|0.05|32.9|0.5|
|51|48.0|54.0|60|180|46.6|51.0|57.2|2|40|0.05|35.7|0.4|
|56|52.0|60.0|70|200|52.2|57.0|63.8|2|40|0.05|39.2|0.3|
|62|58.0|66.0|80|215|58.8|64.4|71.6|2|35|0.05|43.4|0.3|
|68|64.0|72.0|90|240|65.6|71.7|79.8|2|35|0.05|47.6|0.25|
|75|70.0|79.0|95|255|73.4|80.2|88.6|2|35|0.05|52.5|0.2|



Philips Semiconductors 

## Voltage regulator diodes 

## BZV49 series 

## **THERMAL CHARACTERISTICS** 

|**SYMBOL**|**PARAMETER**|**CONDITIONS**|**VALUE**|**UNIT**|
|---|---|---|---|---|
|Rth(j-tp)|thermal resistance from junction to tie-point||15|K/W|
|Rth(j-a)|thermal resistance from junction to ambient|note 1|125|K/W|



## **Note** 

1. Device mounted on a ceramic substrate; area = 2.5 cm[2] ; thickness = 0.7 mm. 

## **GRAPHICAL DATA** 

**==> picture [242 x 289] intentionally omitted <==**

**----- Start of picture text -----**<br>
MBG801<br>10 [3]<br>handbook, halfpage<br>PZSM<br>(W)<br>10 [2]<br>(1)<br>10<br>(2)<br>1<br>10 [−][1] 1 duration (ms) 10<br>(1) Tj = 25 °C (prior to surge).<br>(2) Tj = 150 °C (prior to surge).<br>Fig.2 Maximum permissible non-repetitive peak<br>reverse power dissipation versus duration.<br>**----- End of picture text -----**<br>


**==> picture [242 x 289] intentionally omitted <==**

**----- Start of picture text -----**<br>
MBG781<br>300<br>handbook, halfpage<br>IF<br>(mA)<br>200<br>100<br>0<br>0.6 0.8 VF (V) 1<br>Tj = 25 °C.<br>Fig.3 Forward current as a function of forward<br>voltage; typical values.<br>**----- End of picture text -----**<br>


2005 Feb 03 

6 

Philips Semiconductors 

## Voltage regulator diodes 

## BZV49 series 

**==> picture [492 x 256] intentionally omitted <==**

**----- Start of picture text -----**<br>
MBG927<br>1<br>handbook, full pagewidth<br>SZ 4V3<br>(mV/K) 3V9<br>0 3V6<br>3V3<br>−1<br>3V0<br>−2<br>2V7<br>2V4<br>−3<br>10 [-] [3] 10 [-] [2] 10 [-] [1] 1<br>IZ (A)<br>BZV49-C2V4 to C4V3.<br>Tj = 25 to 150 °C.<br>**----- End of picture text -----**<br>


Fig.4  Temperature coefficient as a function of working current; typical values. 

**==> picture [236 x 232] intentionally omitted <==**

**----- Start of picture text -----**<br>
MBG924<br>10<br>handbook, halfpage<br>SZ<br>(mV/K)<br>10<br>9V1<br>5<br>8V2<br>7V5<br>6V8<br>6V2<br>5V6<br>5V1<br>0<br>4V7<br>−5<br>0 4 8 12 16 20<br>IZ (mA)<br>BZV49-C4V7 to C10.<br>Tj = 25 to 150 °C.<br>**----- End of picture text -----**<br>


**==> picture [213 x 34] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig.5 Temperature coefficient as a function of<br>working current; typical values.<br>**----- End of picture text -----**<br>


2005 Feb 03 

7 

Philips Semiconductors 

## Voltage regulator diodes 

## BZV49 series 

## **PACKAGE OUTLINE** 

**==> picture [477 x 10] intentionally omitted <==**

**----- Start of picture text -----**<br>
Plastic surface mounted package; collector pad for good heat transfer; 3 leads SOT89<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
D B<br>A<br>bp3<br>E<br>HE<br>Lp<br>1 2 3<br>bp2 c<br>w M bp1<br>e1<br>e<br>0 2 4 mm<br>scale<br>DIMENSIONS (mm are the original dimensions)<br>UNIT A bp1 bp2 bp3 c D E e e1 HE Lp w<br>1.6 0.48 0.53 1.8 0.44 4.6 2.6 4.25 1.2<br>mm 3.0 1.5 0.13<br>1.4 0.35 0.40 1.4 0.23 4.4 2.4 3.75 0.8<br>OUTLINE  REFERENCES EUROPEAN<br>ISSUE DATE<br>VERSION  IEC  JEDEC  JEITA PROJECTION<br>99-09-13<br> SOT89 TO-243 SC-62<br>04-08-03<br>**----- End of picture text -----**<br>


2005 Feb 03 

8 

Philips Semiconductors 

## Voltage regulator diodes 

## BZV49 series 

## **DATA SHEET STATUS** 

|**LEVEL**|**DATA SHEET**<br>**STATUS**(1)|**PRODUCT**<br>**STATUS**(2)(3)|**DEFINITION**|
|---|---|---|---|
|I|Objective data|Development|This data sheet contains data from the objective specifcation for product<br>development. Philips Semiconductors reserves the right to change the<br>specifcation in any manner without notice.|
|II|Preliminary data|Qualifcation|This data sheet contains data from the preliminary specifcation.<br>Supplementary data will be published at a later date. Philips<br>Semiconductors reserves the right to change the specifcation without<br>notice, in order to improve the design and supply the best possible<br>product.|
|III|Product data|Production|This data sheet contains data from the product specifcation. Philips<br>Semiconductors reserves the right to make changes at any time in order<br>to improve the design, manufacturing and supply. Relevant changes will<br>be communicated via a Customer Product/Process Change Notifcation<br>(CPCN).|



## **Notes** 

1. Please consult the most recently issued data sheet before initiating or completing a design. 

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 

3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 

## **DEFINITIONS** 

**Short-form specification**  The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. 

**Limiting values definition**  Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. 

**Application information**  Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 

## **DISCLAIMERS** 

**Life support applications**  These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. 

**Right to make changes**  Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 

2005 Feb 03 

9 

## **Philips Semiconductors – a worldwide company** 

## **Contact information** 

For additional information please visit **http://www.semiconductors.philips.com** . Fax: **+31 40 27 24825** For sales offices addresses send e-mail to: **sales.addresses@www.semiconductors.philips.com** . 

> © Koninklijke Philips Electronics N.V. 2005 

SCA76 

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. 

**==> picture [214 x 95] intentionally omitted <==**

Printed in The Netherlands 

Date of release: 2005 Feb 03 Document order number: 9397 750 13926 

R76/04/pp10

Updated at April 28, 2026

Nexperia is a dedicated global leader in discretes, logic, and MOSFET devices. Built on over half a century of semiconductor expertise and operating independently since 2017, the company produces consistently reliable components at an exceptional volume of 85 billion units annually. With its own manufacturing facilities, Nexperia delivers industry-leading small packages that combine power and thermal efficiency with best-in-class quality, meeting the rigorous standards of the automotive sector. Our extensive Nexperia portfolio is heavily focused on discrete semiconductors, providing engineers with a robust selection of core building blocks. This includes a comprehensive range of diodes and rectifiers, featuring a vast selection of Zener single diodes and Schottky diodes designed for precise voltage regulation and efficient power routing. Additionally, we offer an expansive array of bipolar transistors and single MOSFETs tailored for reliable switching and amplification in demanding applications. Beyond these primary offerings, the lineup extends into specialized circuit protection and passive components. This includes transient voltage suppressor (TVS) diodes, Zener array diodes, and small signal diodes, alongside dual MOSFETs and fast recovery rectifiers. For comprehensive design needs, the selection also encompasses integrated passive filters, common mode chokes, and precision timers and oscillators, ensuring a complete solution for high-performance electronic systems.

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